CN212392249U - Switch diode with strong negative resistance on inner mesa - Google Patents
Switch diode with strong negative resistance on inner mesa Download PDFInfo
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- CN212392249U CN212392249U CN202021643293.2U CN202021643293U CN212392249U CN 212392249 U CN212392249 U CN 212392249U CN 202021643293 U CN202021643293 U CN 202021643293U CN 212392249 U CN212392249 U CN 212392249U
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- plastic package
- switch diode
- negative resistance
- package shell
- strong negative
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Abstract
The utility model discloses an internal mesa strong negative resistance switch diode, which comprises a switch diode body, wherein the switch diode body consists of a cylindrical plastic package shell, a positive electrode pin, a negative electrode pin, two waterproof seal plates, P-type impurities and an N-type silicon wafer, the openings at the two ends of the cylindrical plastic package shell are respectively in plastic package connection with the two waterproof seal plates, a first conductive thread column is in threaded connection with a first internal thread groove arranged at one side of the N-type silicon wafer, a second conductive thread column is fixedly arranged at one end of the positive electrode pin, and the second conductive thread column is in threaded connection with a second internal thread groove arranged at one side of the P-type impurities, the utility model is convenient for fast assembling and connecting the positive electrode pin and the negative electrode pin by the arranged first internal thread groove, the second internal thread groove, the first conductive thread column and the second conductive thread column, and simultaneously the positive electrode pin and the negative electrode pin are not easy to be broken, the service performance of the switch diode body is improved, and meanwhile, the reliability of the switch diode body is improved.
Description
Technical Field
The utility model relates to a switch diode technical field specifically is a strong negative resistance switch diode of interior mesa.
Background
The switching diode is one of semiconductor diodes, is a type of diode specially designed and manufactured for switching on and off on a circuit, has shorter time required for changing from on to off or from off to on than a common diode, is commonly in series of 2AK, 2DK and the like, and is mainly used in electronic computers, pulse and switching circuits.
In the process of implementing the present invention, the inventor finds that at least the following problems exist in the prior art and are not solved:
(1) the positive pin and the negative pin of the existing switch diode are mostly connected by adopting fixed welding and are inconvenient to replace, and firstly, the switch diode cannot be normally used and is inconvenient to use because the electric welding area of a welding point is small and the pins are easy to break;
(2) the existing switch diode has the advantages of low overall structural strength, poor heat dissipation and thermal conductivity and incapability of meeting normal use requirements.
(3) The existing switch diode has low overall assembly efficiency and is difficult to meet the production requirement of high yield.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a strong negative resistance switch diode of interior mesa to solve the problem that proposes among the above-mentioned background art.
In order to achieve the above object, the utility model provides a following technical scheme: a strong negative resistance switch diode with an inner table surface comprises a switch diode body, wherein the switch diode body consists of a cylinder plastic package shell, an anode pin, a cathode pin, two waterproof seal plates, P-type impurities and an N-type silicon wafer, openings at two ends of the cylinder plastic package shell are respectively in plastic package connection with the two waterproof seal plates, the top and the bottom of one side of one waterproof seal plate are respectively fixedly provided with an insulating clamp groove, the interiors of the two insulating clamp grooves are respectively in sliding connection with a substrate, one side of the substrate is fixedly connected with the N-type silicon wafer, one side of the other waterproof seal plate is fixedly connected with the P-type impurities, a PN junction is formed between the P-type impurities and the N-type silicon wafer, one end of the cathode pin is fixedly provided with a first conductive threaded column, and the first conductive threaded column is in threaded connection with a first internal thread groove formed in one side of the N-type silicon wafer, and a second conductive threaded column is fixedly arranged at one end of the positive pin and is in threaded connection with a second internal thread groove formed in one side of the P-type impurity.
Preferably, two the opposite side of waterproof shrouding all fixedly is equipped with the aluminum alloy safety cover, the one end of anodal pin and the one end of negative pole pin alternate with the aluminum alloy safety cover that corresponds and be connected.
Preferably, an epoxy resin layer is filled in a gap between the cylindrical plastic package shell and the P-type impurity and the N-type silicon wafer.
Preferably, heat conducting discs are fixedly arranged on two sides of the top end of the cylindrical plastic package shell.
Preferably, the middle part department of drum plastic envelope shell surface is fixed and is equipped with the strengthening rib circle of three equidistance distribution, and three the strengthening rib circle is integrated structure with drum plastic envelope shell.
Preferably, the middle part of the bottom end of the cylindrical plastic package shell is fixedly provided with bonding plates, and the surfaces of the two bonding plates are both attached and connected with a protective film.
Preferably, the cylindrical plastic package shell, the two waterproof seal plates and the reinforcing rib ring are all made of resin materials.
Compared with the prior art, the beneficial effects of the utility model are that:
(1) the utility model relates to a strong negative resistance switch diode of interior mesa through the first internal thread groove, second internal thread groove, first electrically conductive screw post and the electrically conductive screw post of second that are equipped with, the quick assembled joint positive pole pin and the negative pole pin of being convenient for can make positive pole pin and negative pole pin be difficult to take place the rupture simultaneously, has improved the performance of switch diode body, improves the reliability of switch diode body simultaneously.
(2) The utility model relates to a strong negative resistance switch diode of interior mesa, the drum plastic envelope shell of making through the reinforcing rib circle that is equipped with, heat conduction dish and resin material has improved the holistic structural strength of switch diode body, increases wearability and anti performance of falling, and the heat conduction dish is convenient for give off the heat, the better electrically conductive operation of the inside N type silicon chip of being convenient for and P type impurity.
(3) The utility model relates to a strong negative resistance switch diode of interior mesa through the insulating draw-in groove and the waterproof shrouding that are equipped with, equipment switch diode body that can be quick improves production efficiency, satisfies high-yield production needs, and the practicality is strong.
(4) The utility model relates to a strong negative resistance switch diode of interior mesa through the bonding board and the protecting film that are equipped with, the quick installation switch diode body of being convenient for, convenient operation.
Drawings
Fig. 1 is a schematic structural view of the present invention;
fig. 2 is a schematic view of the internal structure of the cylindrical plastic package housing of the present invention;
fig. 3 is a schematic structural view of a first internal thread groove and a second internal thread groove of the present invention;
fig. 4 is a schematic structural view of the cylindrical plastic package housing of the present invention;
in the figure: 1. a cylindrical plastic package shell; 2. a positive electrode pin; 3. a negative electrode pin; 4. a waterproof seal plate; 5. a reinforcing rib ring; 6. a heat conducting plate; 7. a P-type impurity; 8. a PN junction; 9. an N-type silicon wafer; 10. a substrate; 11. an insulating clamping groove; 12. an aluminum alloy protective cover; 13. a first internally threaded groove; 14. a first conductive threaded post; 15. A second internally threaded groove; 16. a second conductive threaded post; 17. an epoxy resin layer; 18. bonding the board; 19. And (4) a protective film.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-4, the present invention provides an embodiment: a strong negative resistance switch diode with an inner mesa comprises a switch diode body, wherein the switch diode body consists of a cylindrical plastic package shell 1, an anode pin 2, a cathode pin 3, two waterproof seal plates 4, a P-type impurity 7 and an N-type silicon wafer 9, openings at two ends of the cylindrical plastic package shell 1 are respectively in plastic package connection with the two waterproof seal plates 4, an insulating clamp groove 11 is fixedly arranged at the top and the bottom of one side of one waterproof seal plate 4, the interiors of the two insulating clamp grooves 11 are respectively in sliding connection with a substrate 10, one side of the substrate 10 is fixedly connected with the N-type silicon wafer 9, one side of the other waterproof seal plate 4 is fixedly connected with the P-type impurity 7, a PN junction 8 is formed between the P-type impurity 7 and the N-type silicon wafer 9, one end of the cathode pin 3 is fixedly provided with a first conductive threaded column 14, the first conductive threaded column 14 is in threaded connection with a first inner threaded groove 13 formed at one side of the N-, and a second conductive threaded column 16 is fixedly arranged at one end of the positive electrode pin 2, and the second conductive threaded column 16 is in threaded connection with a second inner threaded groove 15 formed at one side of the P-type impurity 7.
The other sides of the two waterproof seal plates 4 are fixedly provided with aluminum alloy protective covers 12, one end of the anode pin 2 and one end of the cathode pin 3 are connected with the corresponding aluminum alloy protective covers 12 in an inserting mode, the anode pin 2 and the cathode pin 3 are protected conveniently and are prevented from being broken, an epoxy resin layer 17 is filled in a gap between the cylindrical plastic package shell 1 and the P-type impurity 7 and the N-type silicon wafer 9, the service life of the switch diode body is prolonged, heat conducting discs 6 are fixedly arranged at two sides of the top end of the cylindrical plastic package shell 1 and are convenient for heat dissipation, better conducting operation of the internal N-type silicon wafer 9 and the internal P-type impurity 7 is facilitated, three reinforcing rib rings 5 distributed at equal intervals are fixedly arranged in the middle of the outer surface of the cylindrical plastic package shell 1, the three reinforcing rib rings 5 and the cylindrical plastic package shell 1 are of an integrated structure, and the reinforcing rib rings 5 improve the overall, increase wearability and anti falling performance, the fixed bonding board 18 that is equipped with in middle part of 1 bottom of drum plastic envelope shell, the equal laminating in surface of two bonding boards 18 is connected with protecting film 19, the quick installation switch diode body of being convenient for, convenient operation, drum plastic envelope shell 1, two waterproof shrouding 4 and reinforcing rib circle 5 are made by resin material, improve the holistic structural strength of switch diode body, prevent that falling performance is good.
The working principle is as follows: when the utility model is used, the switch diode body is connected into the circuit through the anode pin 2 and the cathode pin 3, the switch diode body is adhered to the inner table surface through the adhesive plate 18 by tearing the protective film 19, when the anode pin 2 and the cathode pin 3 are both in the forward voltage, the switch diode body is conducted and transmits the current, when the anode pin 2 and the cathode pin 3 are both in the reverse voltage, the switch diode body is disconnected and prevents the current transmission, and in conclusion, the utility model, through the first inner thread groove 13, the second inner thread groove 15, the first conductive thread column 14 and the second conductive thread column 16, the anode pin 2 and the cathode pin 3 can be conveniently and rapidly assembled and connected, meanwhile, the anode pin 2 and the cathode pin 3 are not easy to be broken, the service performance of the switch diode body is improved, and the reliability of the switch diode body is improved, through the reinforcing rib circle 5 that is equipped with, drum plastic envelope shell 1 that heat conduction dish 6 and resin material made, the holistic structural strength of switch diode body has been improved, increase wearability and anti falling performance, heat conduction dish 6 is convenient for distribute the heat, the inside N type silicon chip 9 of being convenient for and the better electrically conductive operation of P type impurity 7, through insulating draw-in groove 11 and the waterproof shrouding 4 that are equipped with, the equipment switch diode body that can be quick, the production efficiency is improved, satisfy high-yield production needs, therefore, the clothes hanger is strong in practicability.
It is obvious to a person skilled in the art that the invention is not restricted to details of the above-described exemplary embodiments, but that it can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (7)
1. The switch diode with the strong negative resistance on the inner table surface comprises a switch diode body and is characterized in that the switch diode body consists of a cylinder plastic package shell (1), a positive electrode pin (2), a negative electrode pin (3), two waterproof seal plates (4), P-type impurities (7) and N-type silicon wafers (9), openings at two ends of the cylinder plastic package shell (1) are respectively in plastic package connection with the two waterproof seal plates (4), an insulating clamp groove (11) is fixedly arranged at the top and the bottom of one side of one waterproof seal plate (4), the insides of the two insulating clamp grooves (11) are in sliding connection with a substrate (10) arranged on the cylinder, one side of the substrate (10) is fixedly connected with the N-type silicon wafer (9), the other side of the waterproof seal plate (4) is fixedly connected with the P-type impurities (7), and PN junctions (8) are formed between the P-type impurities (7) and the N-type silicon wafers (9), the novel silicon wafer cathode structure is characterized in that a first conductive threaded column (14) is fixedly arranged at one end of the cathode pin (3), the first conductive threaded column (14) is in threaded connection with a first inner threaded groove (13) formed in one side of an N-type silicon wafer (9), a second conductive threaded column (16) is fixedly arranged at one end of the anode pin (2), and the second conductive threaded column (16) is in threaded connection with a second inner threaded groove (15) formed in one side of a P-type impurity (7).
2. The internal mesa strong negative resistance switching diode of claim 1, wherein: two the opposite side of waterproof shrouding (4) all is fixed to be equipped with aluminum alloy safety cover (12), the one end of positive pole pin (2) and the one end of negative pole pin (3) alternate with aluminum alloy safety cover (12) that correspond and be connected.
3. The internal mesa strong negative resistance switching diode of claim 1, wherein: and an epoxy resin layer (17) is filled in a gap between the cylindrical plastic package shell (1) and the P-type impurity (7) and the N-type silicon chip (9).
4. The internal mesa strong negative resistance switching diode of claim 1, wherein: and heat conducting discs (6) are fixedly arranged at two sides of the top end of the cylindrical plastic package shell (1).
5. The internal mesa strong negative resistance switching diode of claim 1, wherein: the middle part of the outer surface of the cylindrical plastic package shell (1) is fixedly provided with three reinforcing rib rings (5) distributed at equal intervals, and the reinforcing rib rings (5) and the cylindrical plastic package shell (1) are of an integrated structure.
6. The internal mesa strong negative resistance switching diode of claim 1, wherein: the middle part of the bottom end of the cylindrical plastic package shell (1) is fixedly provided with bonding plates (18), and the surfaces of the two bonding plates (18) are respectively attached with a protective film (19).
7. The internal mesa strong negative resistance switching diode of claim 1, wherein: the cylindrical plastic package shell (1), the two waterproof seal plates (4) and the reinforcing rib ring (5) are all made of resin materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021643293.2U CN212392249U (en) | 2020-08-10 | 2020-08-10 | Switch diode with strong negative resistance on inner mesa |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021643293.2U CN212392249U (en) | 2020-08-10 | 2020-08-10 | Switch diode with strong negative resistance on inner mesa |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212392249U true CN212392249U (en) | 2021-01-22 |
Family
ID=74253689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021643293.2U Expired - Fee Related CN212392249U (en) | 2020-08-10 | 2020-08-10 | Switch diode with strong negative resistance on inner mesa |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212392249U (en) |
-
2020
- 2020-08-10 CN CN202021643293.2U patent/CN212392249U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210122 Termination date: 20210810 |