CN213026424U - Novel negative coupling structure of single-layer dielectric waveguide filter - Google Patents
Novel negative coupling structure of single-layer dielectric waveguide filter Download PDFInfo
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- CN213026424U CN213026424U CN202021415039.7U CN202021415039U CN213026424U CN 213026424 U CN213026424 U CN 213026424U CN 202021415039 U CN202021415039 U CN 202021415039U CN 213026424 U CN213026424 U CN 213026424U
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- 230000008878 coupling Effects 0.000 title claims abstract description 97
- 238000010168 coupling process Methods 0.000 title claims abstract description 97
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 97
- 239000002356 single layer Substances 0.000 title claims description 12
- 239000010410 layer Substances 0.000 claims description 44
- 239000000919 ceramic Substances 0.000 claims description 16
- 239000000178 monomer Substances 0.000 claims description 11
- 238000009713 electroplating Methods 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 5
- 238000012986 modification Methods 0.000 claims description 3
- 230000004048 modification Effects 0.000 claims description 3
- 238000004891 communication Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 230000001808 coupling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
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Abstract
The utility model discloses a novel individual layer dielectric waveguide filter negative coupling structure relates to the wireless communication field. The structure includes: a first negative coupling window (24) disposed laterally of the first dielectric waveguide resonant cavity (22); a second negative coupling window (14) arranged at a side of the second dielectric waveguide resonant cavity (12); the first dielectric waveguide resonant cavity (22) comprises an electromagnetic shielding layer on the side surface of the first negative coupling window (24) and the second dielectric waveguide resonant cavity (12) comprises an electromagnetic shielding layer on the side surface of the second negative coupling window (14).
Description
Technical Field
The utility model relates to a wireless communication field especially relates to a novel individual layer dielectric waveguide filter negative coupling structure.
Background
With the increasing demand of the 5G communication system on the miniaturization of the base station equipment, the dielectric waveguide filter becomes a mainstream application scheme for replacing the traditional cavity filter in the future due to the advantages of small volume, small insertion loss, large bearing power, low cost and the like.
The dielectric waveguide filter commonly used in the industry at present is a single-layer structure scheme, has poor performance and low coupling precision, and is not beneficial to batch production.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that to prior art not enough, provide a novel individual layer dielectric waveguide filter negative coupling structure.
The utility model provides an above-mentioned technical problem's technical scheme as follows:
a novel negative coupling structure for a single-layer dielectric waveguide filter, comprising:
the first negative coupling window is arranged on the side surface of the first dielectric waveguide resonant cavity; the second negative coupling window is arranged on the side surface of the second dielectric waveguide resonant cavity;
the first dielectric waveguide resonant cavity comprises an electromagnetic shielding layer on the side of the first negative coupling window and is connected with the electromagnetic shielding layer on the side of the second dielectric waveguide resonant cavity comprising the second negative coupling window.
The utility model has the advantages that: according to the scheme, the first negative coupling window is arranged on the side face of the first dielectric waveguide resonant cavity, the second negative coupling window is arranged on the side face of the second dielectric waveguide resonant cavity, and the first dielectric waveguide resonant cavity and the second dielectric waveguide resonant cavity are connected through the electromagnetic shielding layers on the respective side faces, so that the beneficial effects of small size, small insertion loss, large bearing power and low cost of the dielectric waveguide filter are achieved.
On the basis of the technical scheme, the utility model discloses can also do following improvement.
Further, the first coupling window includes: the electromagnetic shielding layer comprises a rectangular non-electroplating area and an electromagnetic shielding layer area nested in the non-electromagnetic shielding layer and having a preset shape; the second negative coupling window has the same structure as the first coupling window;
the first negative coupling window is connected with the second negative coupling window, and a rectangular non-electroplating area is avoided.
The beneficial effects of the further scheme are as follows: the structure that the first negative coupling window and the second negative coupling window are connected in the non-electroplating area avoiding the rectangle realizes that the dielectric waveguide filter is formed or metallized in a dry pressing mode, the manufacturing difficulty is greatly reduced, the manufacturing precision can be easily guaranteed, and the efficiency of mass production and the manufacturing yield are improved.
Further, the preset shape may include a T-shape, an E-shape, or a T-shape after modifying the loading site.
The beneficial effects of the further scheme are as follows: the scheme can better realize negative coupling through T-shaped, E-shaped or T-shaped shape after modifying the loading part.
Further, the length of the first negative coupling window is greater than 1/2 of the first dielectric waveguide cavity thickness; the length of the second negative coupling window is greater than 1/2 a of the thickness of the second dielectric waveguide resonant cavity.
The beneficial effects of the further scheme are as follows: according to the scheme, the length of the first negative coupling window is larger than 1/2 of the thickness of the first dielectric waveguide resonant cavity, and the length of the second negative coupling window is larger than 1/2 of the thickness of the second dielectric waveguide resonant cavity, so that the scheme is simpler to manufacture compared with the existing negative coupling structure.
Further, still include: said first negative coupling window increasing the electroless area of the loading site size such that the total length is reduced to 1/4 wavelengths;
the non-plated area of the loading site is oversized so that the overall length is reduced to the second negative coupling window of 1/4 wavelengths.
The beneficial effects of the further scheme are as follows: the area of the non-electroplating area of the loading position size is increased, so that the negative coupling effect is better, and compared with the existing structure, the structure is simpler.
Further, the first dielectric waveguide resonant cavity includes: the ceramic dielectric monomer and the electromagnetic shielding layer coated on the surface of the dielectric monomer; the second dielectric waveguide resonant cavity comprises: the ceramic dielectric single body and the electromagnetic shielding layer coated on the surface of the dielectric single body.
The beneficial effects of the further scheme are as follows: according to the scheme, the electromagnetic shielding layer is coated on the surface of the dielectric monomer, so that the ceramic dielectric monomer has an electromagnetic shielding effect.
Further, still include: the tuning blind hole is arranged on the upper surface of the first dielectric waveguide resonant cavity; and the tuning blind hole is arranged on the upper surface of the second dielectric waveguide resonant cavity.
The beneficial effects of the further scheme are as follows: according to the scheme, the tuning blind holes are formed in the upper surface of the dielectric waveguide resonant cavity, so that the frequency of each dielectric waveguide resonant cavity can be adjusted.
Further, the first dielectric waveguide resonant cavity and the second dielectric waveguide resonant cavity are connected in a high-temperature sintering mode through printing silver paste on the side electromagnetic shielding layer.
The beneficial effects of the further scheme are as follows: according to the scheme, the first ceramic block and the second ceramic block are reliably connected together in a high-temperature sintering mode of printing silver paste on the side electromagnetic shielding layer.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included within the protection scope of the present invention.
Drawings
Fig. 1 is a schematic structural diagram of a negative coupling structure of a novel single-layer dielectric waveguide filter according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a negative coupling window according to another embodiment of the present invention.
Detailed Description
The principles and features of the present invention are described below in conjunction with the following drawings, the examples given are only intended to illustrate the present invention and are not intended to limit the scope of the present invention.
As shown in fig. 1, a negative coupling structure of a novel single-layer dielectric waveguide filter includes: a first negative coupling window 24 disposed at a side of the first dielectric waveguide resonant cavity 22; a second negative coupling window 14 disposed at a side of the second dielectric waveguide resonant cavity 12; the position of the negative coupling window in the dielectric waveguide resonant cavity can be determined according to actual requirements, and is not only in the position shown in the figure. The first dielectric waveguide resonant cavity 22 is the dielectric waveguide resonant cavity 22 in the figure, the first negative coupling window 24 is the negative coupling window 24 in the figure, the second dielectric waveguide resonant cavity 12 is the dielectric waveguide resonant cavity 12 in the figure, and the second negative coupling window 14 is the negative coupling window 14 in the figure.
The electromagnetic shielding layer of the side of the first dielectric waveguide resonant cavity 22 containing the first negative coupling window 24 is connected to the electromagnetic shielding layer of the side of the second dielectric waveguide resonant cavity 12 containing the second negative coupling window 14.
In one embodiment, the first coupling window 24 includes: the electromagnetic shielding layer comprises a rectangular non-electroplating area and an electromagnetic shielding layer area nested in the non-electromagnetic shielding layer and having a preset shape; the second negative coupling window 14 has the same structure as the first coupling window 24; the coupling window comprises an electroplated layer, namely a shaded part of the coupling window shown in fig. 2, and further comprises an electromagnetic shielding layer, namely a blank part of the coupling window shown in fig. 2, wherein the electromagnetic shielding layer is an electroplated layer, the shaded part can be rectangular or square, and the blank part can be T-shaped, E-shaped or T-shaped after a loading part is modified. Wherein a shown in FIG. 2 represents a negative coupling window 14, a shaded portion represents an electroplated layer 16, and a blank is a T-shaped electroplated layer 15 with a reversed hook portion beside T in the figure added after the loading portion is modified; b represents the negative coupling window 24, the shaded portion represents the non-plated layer 26, and the blank is a T-shaped plated layer 25 with the modified loading portion, i.e., the undercut portion beside T in the figure is added.
The first negative coupling window 24 is connected to the second negative coupling window 14, avoiding the rectangular non-plating area.
The scheme has the advantages that the structure that the first negative coupling window 24 and the second negative coupling window 14 are connected with the non-electroplating area avoiding the rectangle is adopted, so that the dielectric waveguide filter is formed by dry pressing or metalized, the manufacturing difficulty is greatly reduced, the manufacturing precision can be easily ensured, and the mass production efficiency and the manufacturing yield are improved.
In another embodiment, the predetermined shape may include a T-shape, an E-shape, or a T-shape after modifying the loading site. The T shape after the loading portion is modified, as shown in fig. 2, the loading size is further increased by flanging the loading portion on the basis of the T shape, so that the total length of the negative coupling structure is reduced again, the flanging length can be any value, and the smaller the total length is, so that the negative coupling precision is higher.
The scheme can better realize negative coupling through T-shaped, E-shaped or T-shaped shape after modifying the loading part.
In one embodiment, the first negative coupling window 24 increases the size of the electroless region of the loading site such that the total length is reduced to 1/4 wavelengths;
the non-plated area of the loading site is oversized to reduce the overall length to the second negative coupling window 14 of 1/4 wavelengths.
The area of the non-electroplating area of the loading position size is increased, so that the negative coupling effect is better, and compared with the existing structure, the structure is simpler.
In one embodiment, in order to facilitate alignment, the plating layer 15 of the negative coupling window disposed on the ceramic block 11 and the plating layer 25 of the negative coupling window disposed on the ceramic block 21 are patterned with an alignment margin of 0.1mm to 0.2mm, which may be disposed on the coupling window 14 or on the coupling window 24. Wherein the alignment margin can be understood as enlarging the non-plating layer of one of the coupling windows, i.e. the hatched portion of the coupling window in the figure, or reducing the plating layer, i.e. the blank portion of the coupling window in the figure. Wherein a ceramic block may include a plurality of resonant cavities, only one of which is shown for ease of understanding and description.
According to the scheme, the first negative coupling window 24 is arranged on the side face of the first dielectric waveguide resonant cavity 22, the second negative coupling window 14 is arranged on the side face of the second dielectric waveguide resonant cavity 12, and the first dielectric waveguide resonant cavity 22 and the second dielectric waveguide resonant cavity 12 are connected through electromagnetic shielding layers on the respective side faces, so that the beneficial effects of small size, small insertion loss, large bearing power and low cost of the dielectric waveguide filter are achieved.
Preferably, in any of the above embodiments, the length of the first negative coupling window 24 is greater than 1/2 times the thickness of the first dielectric waveguide cavity 22; the length of the second negative coupling window 14 is greater than 1/2 times the thickness of the second dielectric waveguide cavity 12.
According to the scheme, the length of the first negative coupling window 24 is larger than 1/2 of the thickness of the first dielectric waveguide resonant cavity 22, and the length of the second negative coupling window 14 is larger than 1/2 of the thickness of the second dielectric waveguide resonant cavity 12, so that the scheme is simpler to manufacture compared with the existing negative coupling structure.
Preferably, in any of the above embodiments, the first dielectric waveguide resonant cavity 22 comprises: the ceramic dielectric monomer and the electromagnetic shielding layer coated on the surface of the dielectric monomer; the second dielectric waveguide resonant cavity 12 includes: the ceramic dielectric single body and the electromagnetic shielding layer coated on the surface of the dielectric single body. Wherein the dielectric monomer can be a high dielectric constant ceramic material.
According to the scheme, the electromagnetic shielding layer is coated on the surface of the dielectric monomer, so that the ceramic dielectric monomer has an electromagnetic shielding effect.
Preferably, in any of the above embodiments, further comprising: a tuning blind hole 23 disposed on the upper surface of the first dielectric waveguide resonant cavity 22; and a tuning blind hole 13 arranged on the upper surface of the second dielectric waveguide resonant cavity 12.
According to the scheme, the tuning blind holes are formed in the upper surface of the dielectric waveguide resonant cavity, so that the frequency of each dielectric waveguide resonant cavity can be adjusted.
Preferably, in any of the above embodiments, the first dielectric waveguide resonant cavity 22 and the second dielectric waveguide resonant cavity 12 are connected by high temperature sintering of a side electromagnetic shielding layer printed with silver paste. Wherein, the photoetching coupling window is required to be avoided when silver paste is printed.
In one embodiment, in order to improve the metallization yield, R or C chamfers are required to be arranged on the orifices of any through holes and blind holes and the edges of the ceramic body, the chamfer size can be any value, and the recommended value is 0.1-0.5.
According to the scheme, the first ceramic block 21 and the second ceramic block 11 are reliably connected together in a high-temperature sintering mode of printing silver paste on the side electromagnetic shielding layer.
In the description herein, references to the description of the terms "embodiment one," "embodiment two," "example," "specific example" or "some examples," etc., mean that a particular method, apparatus, or feature described in connection with the embodiment or example is included in at least one embodiment or example of the present invention.
In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, methods, apparatuses, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included within the protection scope of the present invention.
Claims (8)
1. A novel negative coupling structure of a single-layer dielectric waveguide filter is characterized by comprising:
a first negative coupling window (24) disposed laterally of the first dielectric waveguide resonant cavity (22); a second negative coupling window (14) arranged at a side of the second dielectric waveguide resonant cavity (12);
the electromagnetic shielding layer of the first dielectric waveguide resonant cavity (22) including the side of the first negative coupling window (24) is connected with the electromagnetic shielding layer of the second dielectric waveguide resonant cavity (12) including the side of the second negative coupling window (14).
2. The novel negative coupling structure of single-layer dielectric waveguide filter as claimed in claim 1, wherein the first negative coupling window (24) comprises: the electromagnetic shielding layer comprises a rectangular non-electroplating area and an electromagnetic shielding layer area nested in the non-electromagnetic shielding layer and having a preset shape; the second negative coupling window (14) has the same structure as the first negative coupling window (24);
the first negative coupling window (24) is connected with the second negative coupling window (14) to avoid a rectangular non-plating area.
3. The negative coupling structure of claim 2, wherein the predetermined shape comprises a T-shape, an E-shape or a T-shape after modification of the loading portion.
4. A novel single-layer dielectric waveguide filter negative coupling structure as claimed in claim 1 or 3, wherein the length of the first negative coupling window (24) is greater than 1/2 of the thickness of the first dielectric waveguide resonant cavity (22); the length of the second negative coupling window (14) is greater than 1/2 of the thickness of the second dielectric waveguide resonant cavity (12).
5. The novel negative coupling structure of single-layer dielectric waveguide filter as claimed in claim 2 or 3, further comprising: said first negative coupling window (24) increasing the size of said non-plated area of the loading site such that the overall length is reduced to 1/4 wavelengths;
the non-plated area of increased loading site size reduces the overall length to the second negative coupling window (14) of 1/4 wavelengths.
6. The novel negative coupling structure of single-layer dielectric waveguide filter as claimed in claim 1, wherein the first dielectric waveguide resonant cavity (22) comprises: the ceramic dielectric monomer and the electromagnetic shielding layer coated on the surface of the dielectric monomer; the second dielectric waveguide resonant cavity (12) comprises: the ceramic dielectric single body and the electromagnetic shielding layer coated on the surface of the dielectric single body.
7. The novel negative coupling structure of single-layer dielectric waveguide filter as claimed in claim 1, 3 or 6, further comprising: a tuning blind hole (23) arranged on the upper surface of the first dielectric waveguide resonant cavity (22); and the tuning blind hole 13 is arranged on the upper surface of the second dielectric waveguide resonant cavity (12).
8. The negative coupling structure of claim 1, 3 or 6, wherein the first dielectric waveguide resonant cavity (22) and the second dielectric waveguide resonant cavity (12) are connected by high-temperature sintering of side electromagnetic shielding layer printed silver paste.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021415039.7U CN213026424U (en) | 2020-07-17 | 2020-07-17 | Novel negative coupling structure of single-layer dielectric waveguide filter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202021415039.7U CN213026424U (en) | 2020-07-17 | 2020-07-17 | Novel negative coupling structure of single-layer dielectric waveguide filter |
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| CN213026424U true CN213026424U (en) | 2021-04-20 |
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| CN202021415039.7U Active CN213026424U (en) | 2020-07-17 | 2020-07-17 | Novel negative coupling structure of single-layer dielectric waveguide filter |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20221219 Address after: Room 10541, 5th floor, unit 1, building 3, Shaanxi Huide science and Technology Park, 32 Gaoxin 6th Road, high tech Zone, Xi'an City, Shaanxi Province, 710000 Patentee after: Xi'an Fengju Electronic Technology Co.,Ltd. Address before: Room 10541, 5th floor, unit 1, building 3, Shaanxi Huide science and Technology Park, 32 Gaoxin 6th Road, high tech Zone, Xi'an City, Shaanxi Province, 710000 Patentee before: Xi'an Fengju Electronic Technology Co.,Ltd. Patentee before: Chengdu Radisson Technology Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: A novel negative coupling structure for single-layer dielectric waveguide filters Granted publication date: 20210420 Pledgee: Xi'an innovation financing Company limited by guarantee Pledgor: Xi'an Fengju Electronic Technology Co.,Ltd. Registration number: Y2024980014804 |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right |