CN212969443U - Switch power supply - Google Patents
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- CN212969443U CN212969443U CN202022278160.6U CN202022278160U CN212969443U CN 212969443 U CN212969443 U CN 212969443U CN 202022278160 U CN202022278160 U CN 202022278160U CN 212969443 U CN212969443 U CN 212969443U
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Abstract
The utility model discloses a switching power supply, include: the gates of the transistors Q1, Q2, Q3, Q4 and Q5 are all connected to the power control signal input terminal, the drain of the transistor Q1 is connected to one end of the power U, the source of the transistor Q1 is connected to the drain of the transistor Q2 and one end of the inductor L1, the source of the transistor Q2 is connected to the drain of the transistor Q3 and one end of the inductor L2, the source of the transistor Q3 is connected to the other end of the power U, one end of the capacitor C2, one end of the capacitor C3 and one end of the resistor RL, the other end of the inductor L1 is connected to one end of the capacitor C1 and the drain of the transistor Q4, the other end of the inductor L2 is connected to the other end of the capacitor C2 and the source of the transistor Q2, the source of the transistor Q2 is connected to the drain of the transistor Q2 and one end of the. The utility model discloses switching power supply also can satisfy low ripple, high efficiency, quick dynamic response, high resolution simultaneously under need not to dispose the high resolution PWM module condition.
Description
Technical Field
The utility model belongs to the technical field of switching power supply electronic circuit, concretely relates to switching power supply.
Background
With the development of power electronic technology, power modules are widely applied in various fields, and a switching power supply gradually replaces a linear power supply and becomes a mainstream power supply.
The power switch of the switching power supply is in a switching state, and the power switch of the linear power supply is in a semi-conducting state, so that the efficiency of the switching power supply is generally higher than that of the linear power supply, but the ripple and dynamic response of the switching power supply are generally much lower than those of the linear power supply. In some situations, high efficiency of the switching power supply is required, and meanwhile, ripple and dynamic response are required, and at the moment, the general scheme can improve the switching frequency and sacrifice efficiency. Efficiency and ripple (or dynamic response) are always spears. In the high-voltage field, it is much harder to increase the switching frequency than in the low-voltage field, and the requirement on the semiconductor process is very high, for example, an Insulated Gate Bipolar Transistor (IGBT for short) is generally adopted as a switching tube in a 1200V switching power supply, whereas the switching frequency of a conventional IGBT is about 20kHz, and the high frequency can reach about 100kHz, which is almost the limit; for another example, a switching tube operating at 600V may select a high-voltage Metal-Oxide-Semiconductor (MOS) besides the IGBT, and the switching frequency of the MOS may be higher than that of the IGBT, but the cost of the high-voltage MOS is not low, and even if the high-voltage MOS is used, the frequency is difficult to reach over 100kHz, and the high loss of the frequency cannot meet the design requirement. In order to reduce the output voltage ripple, in addition to increasing the switching frequency, the filter parameters may be changed, for example, increasing the output filter inductance or increasing the filter capacitance, although this method can reduce the ripple, the dynamic response of the output will be poor. In particular, instruments and equipment, such as a function power supply, a direct current stabilized power supply and the like, have high requirements on the quality of output voltage, and the direct current stabilized power supplies on the market at present are classified into 2 types: the output ripple and dynamic response of the regulated power supply of the switching power supply type are completely different from those of the linear power supply, but the power supply has high efficiency, is lighter and more compact than the linear power supply in the situation that the requirements on the ripple and the dynamic response are not so high, and has low price. In a digital switching power supply, Pulse Width Modulation (PWM) is generally used to control complementary switching tubes to perform chopping conversion.
However, the PWM is accurate, for example, a PWM module with 100MHz main frequency, if PWM with 1MHz is output, the accuracy of PWM is only 1%, it is difficult to meet the requirement of frequency converter or multi-channel parallel switching power supply system, and in order to improve the PWM accuracy, the switching frequency must be reduced. In order to solve the contradiction, some digital chips have high-resolution PWM, the equivalent main frequency can reach about 5GHz, which is dozens of times of the precision of the traditional PWM, and the PWM resolution is difficult to ensure in a high-frequency state for the digital chips without high-resolution PWM modules.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problems existing in the prior art, the utility model provides a switching power supply.
An embodiment of the utility model provides a switching power supply, this switching power supply includes:
power supply U, transistor Q1, transistor Q2, transistor Q3, transistor Q4, transistor Q5, inductor L1, inductor L2, inductor L3, capacitor C1, capacitor C2, capacitor C3 and resistor RL, wherein,
gates of the transistors Q1 to Q5 are all connected to a power supply control signal input terminal, a drain of the transistor Q1 is connected to one end of the power supply U, a source of the transistor Q1 is connected to a drain of the transistor Q2 and one end of the inductor L1, a source of the transistor Q2 is connected to a drain of the transistor Q3 and one end of the inductor L2, a source of the transistor Q3 is connected to the other end of the power supply U, one end of the capacitor C2, one end of the capacitor C3 and one end of the resistor RL, the other end of the inductor L1 is connected to one end of the capacitor C1 and a drain of the transistor Q4, the other end of the inductor L2 is connected to the other end of the capacitor C1, the other end of the capacitor C2 and a source of the transistor Q5, a source of the transistor Q4 is connected to a drain of the transistor Q5 and one end of the inductor L3, the other end of the inductor L3 is connected with the other end of the capacitor C3 and the other end of the resistor RL.
In an embodiment of the present invention, the transistor Q1, the transistor Q2, the transistor Q3 are IGBT transistors, and the transistor Q4, the transistor Q5 are MOS transistors.
In an embodiment of the present invention, the device further includes a capacitor C4, one end of the capacitor C4 is connected to the drain of the transistor Q1, and the other end of the capacitor C4 is connected to the drain of the transistor Q4.
In an embodiment of the present invention, the device further includes a capacitor C5, one end of the capacitor C5 is connected to the drain of the transistor Q1, and the other end of the capacitor C5 is connected to one end of the inductor L3, one end of the capacitor C3, and one end of the resistor R5.
In an embodiment of the present invention, the electronic device further includes a capacitor C5, one end of the capacitor C5 is connected to the drain of the transistor Q4, the other end of the capacitor C5 is connected to one end of the inductor L3, one end of the capacitor C3, one end of the resistor R5, and the other end of the capacitor C3 is connected to the source of the transistor Q5 and is not connected to the source of the transistor Q3.
In an embodiment of the present invention, the power supply further comprises a transistor Q6, the gate of the transistor Q6 is connected to the power supply control signal input terminal, the drain of the transistor Q6 is connected to the drain of the transistor Q1, the source of the transistor Q6 is connected to the drain of the transistor Q3, and the source of the transistor Q2 is connected to the source of the transistor Q3 and is not connected to the drain of the transistor Q3.
In an embodiment of the present invention, the power supply further includes a transistor Q6, the gate of the transistor Q6 is connected to the power supply control signal input terminal, the drain of the transistor Q6 is connected to the drain of the transistor Q1, the source of the transistor Q6 is connected to the drain of the transistor Q3, and the source of the transistor Q2 is connected to one end of the inductor L2, one end of the capacitor C1, and one end of the capacitor C2 and is not connected to the drain of the transistor Q3.
In an embodiment of the present invention, the transistor Q6 is an IGBT tube.
In an embodiment of the present invention, the resistor RL is interchanged with the power source U, one end of the power source U is connected to one end of the inductor L3 and one end of the capacitor C3, the other end of the power source U is connected to the source of the transistor Q3, one end of the resistor RL is connected to the drain of the transistor Q1, and the other end of the resistor RL is connected to the source of the transistor Q3.
Compared with the prior art, the beneficial effects of the utility model are that:
the utility model provides a switching power supply, the circuit is realized simply, need not to dispose the high resolution PWM module condition, still satisfies high efficiency, low ripple, quick dynamic response, high resolution simultaneously, and wherein, resolution ratio is higher than ordinary PWM by tens times or even hundreds of times, can satisfy and be applied to among converter or the parallelly connected switching power supply system of multichannel.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic circuit diagram of a first switching power supply according to an embodiment of the present invention;
fig. 2 is a schematic circuit diagram of a second switching power supply according to an embodiment of the present invention;
fig. 3 is a schematic circuit diagram of a third switching power supply according to an embodiment of the present invention;
fig. 4 is a schematic circuit diagram of a fourth switching power supply according to an embodiment of the present invention;
fig. 5 is a schematic circuit diagram of a fifth switching power supply according to an embodiment of the present invention;
fig. 6 is a schematic circuit diagram of a sixth switching power supply according to an embodiment of the present invention;
fig. 7 is a schematic circuit diagram of a seventh switching power supply according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the present invention is not limited thereto.
Example one
In order to solve the problem that it is difficult to ensure the PWM resolution in the high frequency state when the digital chip of the high resolution PWM module is not configured, please refer to fig. 1, and fig. 1 is a schematic circuit structure diagram of a first switching power supply provided by an embodiment of the present invention. The embodiment of the utility model provides a switching power supply, this switching power supply includes:
a power supply U, a transistor Q1, a transistor Q2, a transistor Q3, a transistor Q4, a transistor Q5, an inductor L1, an inductor L2, a capacitor C2, and a resistor RL, wherein a gate of the transistor Q2, and a gate of the transistor Q2 are all connected to the power supply control signal input terminal, a drain of the transistor Q2 is connected to one end of the power supply U, a source of the transistor Q2 is connected to a drain of the transistor Q2 and one end of the inductor L2, a source of the transistor Q2 is connected to the other end of the power supply U, one end of the capacitor C2, and one end of the resistor RL, a second end of the inductor L2 is connected to one end of the capacitor C2, a drain of the transistor Q2, and a drain of the inductor L2, The other end of the capacitor C2 is connected to the source of the transistor Q5, the source of the transistor Q4 is connected to the drain of the transistor Q5 and to one end of the inductor L3, and the other end of the inductor L3 is connected to the other end of the capacitor C3 and to the other end of the resistor RL.
Specifically, the present embodiment is composed of 2-stage networks, the first-stage network is responsible for coarse adjustment, and includes a circuit of a transistor Q1, a transistor Q2, a transistor Q3, an inductor L1, and an inductor L2, the high voltage of the power supply U is roughly adjusted to a low voltage and transmitted to the second-stage network, the second-stage network is responsible for fine adjustment, and includes a transistor Q4, a transistor Q5, an inductor L3, and a capacitor C3, the voltage output by the coarse adjustment of the first-stage network is finely adjusted, the output result is accumulated with the voltage of the coarse adjustment, and finally the voltage is output, wherein the power supply control signal input end is connected to obtain a power supply control signal according to. In this embodiment, the first-stage coarse tuning network is composed of high-voltage-resistant and slow-response switching tubes, so that the high-voltage-resistant characteristics of the switching tubes are fully utilized, but due to the low switching frequency of the switching tubes, the output voltage ripple is likely to be large, the dynamic response is slow, but the defects cannot directly affect the output, because the switching tubes of the second-stage fine tuning network are generally low-voltage tubes, the switching frequency is high, and the final output voltage is the sum of the 2-stage networks. Therefore, the front stage has slow reaction and big ripple, and the rear stage can be supplemented, so that the circuit combination can ensure that the whole power switch system can meet the requirements of low ripple, high efficiency and quick dynamic response in the application occasions of high voltage and low voltage. In addition, the second-stage fine adjustment network is used for subdividing the voltage output by the first-stage coarse adjustment network, so that the resolution of the PWM can be subdivided on the precision of the first stage, the equivalent resolution can be the sum of the precision of the first-stage PWM and the second-stage PWM, for example, the PWM adopts 10-bit precision, and the PWM precision of the system can reach 20 bits. Specifically, the method comprises the following steps:
in the embodiment, the left side is the voltage input of the power supply U, the right side RL is the load, the voltages at two ends of the capacitor C1 and the capacitor C2 can be respectively adjusted by adjusting the conduction duty ratios of the transistor Q1, the transistor Q2 and the transistor Q3, the maximum voltage value of the capacitor C1 can not exceed the withstand voltage of the transistor Q4 and the transistor Q5, the voltage of the capacitor C3 can be adjusted by changing the duty ratios of the transistor Q4 and the transistor Q5, and the voltage of the final load RL is equal to the sum of the voltages of the capacitor C2 and the capacitor C3, namely the sum of the output voltages of the first-stage coarse tuning network and the second-. For example, if U is 1000V, the switching frequency of the transistor Q1, the transistor Q2 and the transistor Q3 is selected to be 10kHz, the on duty ratios of the transistor Q1, the transistor Q2 and the transistor Q3 are adjusted so that the voltage of the capacitor C1 is below 50V, the voltage of the transistor Q4 and the transistor Q5 is resistant to voltage of at least 50V, and the switching frequency is selected to be 100kHz, the voltage of the capacitor C3 can be adjusted by adjusting the on duty ratios of the transistor Q4 and the transistor Q5, and if the voltage of the capacitor C3 fluctuates in the opposite direction and is equal to the voltage of the capacitor C2, the sum of the voltage of the capacitor C2 and the voltage of the capacitor C3 is kept stable and constant, so that the high-voltage side can be kept in low-frequency switching while. The loss caused by the second-stage fine tuning network is usually much lower than that of the first-stage coarse tuning network in this embodiment, for the following reasons: (1) the switching voltage of the second-stage fine tuning network switching tube is usually less than 1/10 of the first-stage coarse tuning network switching tube, for example, 1/20, the current is almost two-stage, and the frequency of the second-stage fine tuning network is 10 times or even higher than that of the first-stage coarse tuning network; (2) the second-stage fine adjustment network adopts a low-voltage switching tube, and the switching speed of the switching tube is far higher than that of a high-voltage tube of the first-stage coarse adjustment network; (3) the conduction voltage drop of the low-voltage pipe of the second-stage fine adjustment network can be far lower than that of the high-voltage pipe of the first-stage coarse adjustment network. Therefore, the total loss of the 2-stage network switch tube adopted by the embodiment is smaller than the power consumption of the traditional one-stage network switch light.
Preferably, the transistor Q1, the transistor Q2 and the transistor Q3 are all IGBT transistors, and the transistor Q4 and the transistor Q5 are all MOS transistors.
Further, please refer to fig. 2, fig. 2 is a schematic circuit structure diagram of a second switching power supply according to an embodiment of the present invention, in which the switching power supply of this embodiment further includes a capacitor C4 on the basis of fig. 1, one end of the capacitor C4 is connected to the drain of the transistor Q1, and the other end of the capacitor C4 is connected to the drain of the transistor Q4. The second switching power supply implementation of this embodiment is similar to that of fig. 1, except that a capacitor C4 is added, the capacitor C4 is a filter capacitor, and except that a filtering effect is achieved and an implementation principle of the whole circuit is not affected, the implementation principle and technical effect of the second switching power supply are similar to those of fig. 1, and specifically please refer to the implementation above, as long as the voltages of the transistor Q4 and the transistor Q5 are stabilized, it is avoided that the low-voltage tube of the second-stage fine tuning network is not damaged by the high-voltage tube of the first-stage coarse tuning network.
Further, referring to fig. 3, fig. 3 is a schematic circuit structure diagram of a third switching power supply according to an embodiment of the present invention, which further includes a capacitor C5, one end of the capacitor C5 is connected to the drain of the transistor Q1, and the other end of the capacitor C5 is connected to one end of the inductor L3, one end of the capacitor C3, and one end of the resistor R5. The third switching power supply implementation of this embodiment is similar to that of fig. 2, except that a capacitor C5 is added, the capacitor C5 is also a filter capacitor, and except that a filtering effect is achieved and the implementation principle of the whole circuit is not affected, the implementation principle and technical effect of the third switching power supply implementation are similar to those of fig. 1, and for the specific reference, the implementation is only required to stabilize the voltages of the transistor Q4 and the transistor Q5, so that the low-voltage tube of the second-stage fine tuning network is prevented from being damaged by the high-voltage tube of the first-stage coarse tuning network.
Further, please refer to fig. 4, fig. 4 is a schematic circuit structure diagram of a fourth switching power supply according to an embodiment of the present invention, further including a capacitor C5, wherein one end of the capacitor C5 is connected to the drain of the transistor Q4, the other end of the capacitor C5 is connected to one end of the inductor L3, one end of the capacitor C3 and one end of the resistor R5, and the other end of the capacitor C3 is connected to the source of the transistor Q5 and is not connected to the source of the transistor Q3. The fourth switching power supply implementation of this embodiment is similar to that of fig. 2, except that a capacitor C5 is added, the capacitor C5 is also a filter capacitor, and except that a filtering effect is achieved and the implementation principle of the whole circuit is not affected, the implementation principle and technical effect of the fourth switching power supply implementation are similar to those of fig. 1, and for the specific reference, the implementation is only required to stabilize the voltages of the transistor Q4 and the transistor Q5, so as to prevent the low-voltage tube of the second-stage fine tuning network from being damaged by the high-voltage tube of the first-stage coarse tuning network. Different from fig. 3, the connection relationship between the capacitor C3 and the capacitor C4 in fig. 4 is adjusted, but the implementation principle of the whole circuit is not affected, and only when the capacitor C3 and the capacitor C4 are selected, the voltage withstanding degree of the capacitor C3 and the capacitor C4 may be different from that in fig. 3, and is determined by the actual circuit.
Further, please refer to fig. 5, fig. 5 is a schematic circuit diagram of a fifth switching power supply according to an embodiment of the present invention, further including a transistor Q6, the gate of the transistor Q6 is connected to the power control signal input terminal, the drain of the transistor Q6 is connected to the drain of the transistor Q1, the source of the transistor Q6 is connected to the drain of the transistor Q3, and the source of the transistor Q2 is connected to the source of the transistor Q3 and is not connected to the drain of the transistor Q3. In this embodiment, fig. 5 is different from fig. 1 in that a half bridge composed of a transistor Q1, a transistor Q2, and a transistor Q3 is adopted in the first-stage coarse tuning network in fig. 1, and an independent half bridge composed of a transistor Q1, a transistor Q2, a transistor Q6, and a transistor Q3 is adopted in the first-stage coarse tuning network in fig. 5, but the implementation principle and technical effect of the fifth switching power supply are similar to those in fig. 1, specifically please refer to the implementation above, as long as the voltages of the transistor Q4 and the transistor Q5 are stabilized, it is avoided that the low-voltage tube of the second-stage fine tuning network is not damaged by the high-voltage tube of the.
Preferably, the transistor Q6 is an IGBT tube.
Further, please refer to fig. 6, fig. 6 is a schematic circuit diagram of a sixth switching power supply according to an embodiment of the present invention, further including a transistor Q6, the gate of the transistor Q6 is connected to the power control signal input terminal, the drain of the transistor Q6 is connected to the drain of the transistor Q1, the source of the transistor Q6 is connected to the drain of the transistor Q3, and the source of the transistor Q2 is connected to one end of the inductor L2, one end of the capacitor C1, and one end of the capacitor C2 and is not connected to the drain of the transistor Q3. In this embodiment, fig. 6 is the same as fig. 5, the first-stage coarse tuning network uses a half bridge formed by the transistor Q1, the transistor Q2, the transistor Q6, and the transistor Q3, respectively, and fig. 5 is different from fig. 6 in terms of the source connection position of the transistor Q2, but the sixth switching power supply implementation principle and the technical effect are similar to those of fig. 1, specifically referring to the implementation above, as long as the voltage of the transistor Q4 and the voltage of the transistor Q5 are stabilized, it is avoided that the low-voltage tube of the second-stage fine tuning network is not damaged by the high-voltage tube of the first-stage coarse tuning.
Preferably, the transistor Q6 is an IGBT tube.
Further, please refer to fig. 7, fig. 7 is a schematic circuit diagram of a seventh switching power supply according to an embodiment of the present invention, in which a resistor RL is interchanged with a power source U, one end of the power source U is connected to one end of an inductor L3 and one end of a capacitor C3, the other end of the power source U is connected to a source of a transistor Q3, one end of the resistor RL is connected to a drain of the transistor Q1, and the other end of the resistor RL is connected to a source of a transistor Q3. The left side of the circuit of the embodiment is used as the input of the power supply U, the right side is used as the output of the load RL, the conventional switching power supply is adopted, the right side is used as the input of the power supply U, the left side is used as the output of the load RL, the conventional switching power supply is also adopted, and the conventional switching power supply is also a switching power supply and can be used as an electronic load.
In summary, the switching power supply provided by this embodiment has a simple circuit, and still satisfies high efficiency, low ripple, fast dynamic response, and high resolution without configuring a high resolution PWM module, where the resolution is higher than that of the ordinary PWM by several tens or even hundreds of times, and can satisfy and be applied to a frequency converter or a multi-path parallel switching power supply system.
The foregoing is a more detailed description of the present invention, taken in conjunction with the specific preferred embodiments thereof, and it is not intended that the invention be limited to the specific embodiments shown and described. To the utility model belongs to the technical field of ordinary technical personnel, do not deviate from the utility model discloses under the prerequisite of design, can also make a plurality of simple deductions or replacement, all should regard as belonging to the utility model discloses a protection scope.
Claims (9)
1. A switching power supply, comprising: power supply U, transistor Q1, transistor Q2, transistor Q3, transistor Q4, transistor Q5, inductor L1, inductor L2, inductor L3, capacitor C1, capacitor C2, capacitor C3 and resistor RL, wherein,
gates of the transistors Q1 to Q5 are all connected to a power supply control signal input terminal, a drain of the transistor Q1 is connected to one end of the power supply U, a source of the transistor Q1 is connected to a drain of the transistor Q2 and one end of the inductor L1, a source of the transistor Q2 is connected to a drain of the transistor Q3 and one end of the inductor L2, a source of the transistor Q3 is connected to the other end of the power supply U, one end of the capacitor C2, one end of the capacitor C3 and one end of the resistor RL, the other end of the inductor L1 is connected to one end of the capacitor C1 and a drain of the transistor Q4, the other end of the inductor L2 is connected to the other end of the capacitor C1, the other end of the capacitor C2 and a source of the transistor Q5, a source of the transistor Q4 is connected to a drain of the transistor Q5 and one end of the inductor L3, the other end of the inductor L3 is connected with the other end of the capacitor C3 and the other end of the resistor RL.
2. The switching power supply according to claim 1, wherein the transistor Q1, the transistor Q2 and the transistor Q3 are all IGBT transistors, and the transistor Q4 and the transistor Q5 are all MOS transistors.
3. The switching power supply according to claim 1, further comprising a capacitor C4, wherein one end of the capacitor C4 is connected to the drain of the transistor Q1, and the other end of the capacitor C4 is connected to the drain of the transistor Q4.
4. The switching power supply according to claim 3, further comprising a capacitor C5, wherein one end of the capacitor C5 is connected to the drain of the transistor Q1, and the other end of the capacitor C5 is connected to one end of the inductor L3, one end of the capacitor C3, and one end of the resistor R5.
5. The switching power supply according to claim 3, further comprising a capacitor C5, wherein one end of the capacitor C5 is connected to the drain of the transistor Q4, the other end of the capacitor C5 is connected to one end of the inductor L3, one end of the capacitor C3 and one end of the resistor R5, and the other end of the capacitor C3 is connected to the source of the transistor Q5 and not connected to the source of the transistor Q3.
6. The switching power supply according to claim 1, further comprising a transistor Q6, wherein the gate of the transistor Q6 is connected to the power supply control signal input, the drain of the transistor Q6 is connected to the drain of the transistor Q1, the source of the transistor Q6 is connected to the drain of the transistor Q3, and the source of the transistor Q2 is connected to the source of the transistor Q3 and not connected to the drain of the transistor Q3.
7. The switching power supply according to claim 1, further comprising a transistor Q6, wherein the gate of the transistor Q6 is connected to the power supply control signal input terminal, the drain of the transistor Q6 is connected to the drain of the transistor Q1, the source of the transistor Q6 is connected to the drain of the transistor Q3, and the source of the transistor Q2 is connected to one end of the inductor L2, one end of the capacitor C1, one end of the capacitor C2 and is not connected to the drain of the transistor Q3.
8. The switching power supply according to claim 6 or 7, wherein the transistor Q6 is an IGBT tube.
9. The switching power supply according to claim 1, wherein the resistor RL is interchanged with the power supply U, one end of the power supply U is connected to one end of the inductor L3 and one end of the capacitor C3, the other end of the power supply U is connected to the source of the transistor Q3, one end of the resistor RL is connected to the drain of the transistor Q1, and the other end of the resistor RL is connected to the source of the transistor Q3.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112117898A (en) * | 2020-10-13 | 2020-12-22 | 上海波圆电子科技有限公司 | Switch power supply |
| CN112117898B (en) * | 2020-10-13 | 2024-10-22 | 上海波圆电子科技有限公司 | Switch power supply |
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2020
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112117898A (en) * | 2020-10-13 | 2020-12-22 | 上海波圆电子科技有限公司 | Switch power supply |
| CN112117898B (en) * | 2020-10-13 | 2024-10-22 | 上海波圆电子科技有限公司 | Switch power supply |
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| GR01 | Patent grant |