CN212848419U - Long service life monocrystalline silicon piece - Google Patents
Long service life monocrystalline silicon piece Download PDFInfo
- Publication number
- CN212848419U CN212848419U CN202021337625.4U CN202021337625U CN212848419U CN 212848419 U CN212848419 U CN 212848419U CN 202021337625 U CN202021337625 U CN 202021337625U CN 212848419 U CN212848419 U CN 212848419U
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- CN
- China
- Prior art keywords
- layer
- silicon
- chip body
- monocrystalline silicon
- silicon chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 230000004224 protection Effects 0.000 claims description 7
- 229920006289 polycarbonate film Polymers 0.000 claims description 6
- -1 polytetrafluoroethylene Polymers 0.000 claims description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 5
- 230000003678 scratch resistant effect Effects 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 65
- 239000011241 protective layer Substances 0.000 abstract description 11
- 238000009434 installation Methods 0.000 abstract description 6
- 238000007790 scraping Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 230000032683 aging Effects 0.000 description 4
- 150000003376 silicon Chemical class 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000006750 UV protection Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a long service life monocrystalline silicon piece, including the silicon chip body, the surface of silicon chip body is evenly arranged and is equipped with the grid line, the both sides on silicon chip body surface all are provided with the drainage line, drainage line and grid line are for running through the setting, the silicon chip body includes single silicon basic unit, single silicon basic unit's top fixedly connected with matte structural layer, the top fixedly connected with protective layer of matte structural layer, protective layer include anti ultraviolet layer and prevent scraping the layer and constitute. The utility model discloses a silicon chip body, grid line, drainage wire, single silicon basic unit, matte structural layer, protective layer, anti ultraviolet layer, prevent scraping layer, antireflection layer and the cooperation on anti-reflection coating use, can effectually solve the relatively poor problem of traditional monocrystalline silicon piece protectiveness in the installation, this structure makes this two-sided monocrystalline silicon piece's intensity higher, and difficult emergence is cracked when the installation, can further reduce the light decay simultaneously to improve monocrystalline silicon piece to the absorption efficiency of sunshine.
Description
Technical Field
The utility model relates to a monocrystalline silicon technical field specifically is a long service life monocrystalline silicon piece.
Background
The crystal silicon is an active non-metal element, is an important component of a crystal material, is in the front of the development of new materials, is mainly used as a semiconductor material and utilizes solar photovoltaic power generation, heat supply and the like, and as solar energy has the advantages of cleanness, environmental protection, convenience and the like, in the last thirty years, solar energy utilization technology has been greatly developed in the aspects of research and development, commercial production and market development and becomes one of new industries of rapid and stable development in the world.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a long service life monocrystalline silicon piece possesses the advantage that improves life, and it is relatively poor to have solved present monocrystalline silicon piece's protective properties, for example, the anti ultraviolet performance is relatively poor to under ultraviolet permanent irradiation, can lead to the ageing of silicon chip base member, and shock resistance and the all relatively poor problem of performance of anti-scratch.
In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides a long service life monocrystalline silicon piece, includes the silicon chip body, the surface of silicon chip body is evenly arranged and is equipped with the grid line, the both sides on silicon chip body surface all are provided with the drainage wire, drainage wire and grid line are for running through the setting, the silicon chip body includes single silicon basic unit, the top fixedly connected with matte structure layer of single silicon basic unit, the top fixedly connected with protective layer of matte structure layer, the protective layer includes anti ultraviolet layer and prevents scraping the formation, the fixed surface of protective layer is connected with anti-reflection coating, anti-reflection coating's fixed surface is connected with anti-reflection coating.
Preferably, the suede structure layer is uneven in shape, and the ultraviolet-proof layer is made of an ultraviolet-proof polycarbonate film.
Preferably, the scratch-resistant layer is made of polytetrafluoroethylene, and the anti-reflection layer is made of a silicon nitride film.
Preferably, the anti-reflection layer comprises silicon oxide layers and zirconium oxide layers, and the silicon oxide layers and the zirconium oxide layers are alternately arranged from top to bottom.
Preferably, gallium particles are uniformly doped and distributed in the main body of the single silicon-based layer, and the number of the drainage wires is two.
Compared with the prior art, the beneficial effects of the utility model are as follows:
1. the utility model discloses a silicon chip body, grid line, drainage wire, single silicon basic unit, matte structural layer, protective layer, anti ultraviolet layer, prevent scraping layer, antireflection layer and the cooperation on anti-reflection coating use, can effectually solve the relatively poor problem of traditional monocrystalline silicon piece protectiveness in the installation, this structure makes this two-sided monocrystalline silicon piece's intensity higher, and difficult emergence is cracked when the installation, can further reduce the light decay simultaneously to improve monocrystalline silicon piece to the absorption efficiency of sunshine.
2. The utility model discloses a set up the anti ultraviolet layer, the anti ultraviolet layer is anti ultraviolet polycarbonate film, and it can the separation ultraviolet ray to can restrain the ageing of monosilicon basic unit, prevent scraping the layer through setting up, prevent scraping the layer and be polytetrafluoroethylene, thereby can play better anti-scratch effect, through setting up anti-reflection layer, make this silicon chip can with more light contact in as solar energy component unit area, promoted the conversion efficiency when this silicon chip is as solar energy component.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic view of the silicon wafer body of the present invention;
fig. 3 is a schematic view of the structure of the protective layer of the present invention.
In the figure: 1. a silicon wafer body; 101. a single silicon base layer; 102. a suede structure layer; 103. a protective layer; 1031. an ultraviolet-proof layer; 1032. a scratch-resistant layer; 104. an anti-reflection layer; 105. an anti-reflection layer; 2. a gate line; 3. and (4) a drainage wire.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front end", "rear end", "both ends", "one end", "the other end", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element to be referred must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted", "provided", "connected", and the like are to be construed broadly, such as "connected", which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The components adopted by the utility model are all universal standard components or components known by the technicians in the field, and the structure and the principle of the components are known by the technicians through technical manuals or conventional experimental methods.
Referring to fig. 1-3, a monocrystalline silicon wafer with a long service life comprises a silicon wafer body 1, grid lines 2 are uniformly arranged on the surface of the silicon wafer body 1, drainage lines 3 are arranged on both sides of the surface of the silicon wafer body 1, the drainage lines 3 and the grid lines 2 are arranged in a penetrating manner, the silicon wafer body 1 comprises a single silicon base layer 101, gallium particles are uniformly doped and distributed in the main body of the single silicon base layer 101, the number of the drainage lines 3 is two, a suede structure layer 102 is fixedly connected to the top of the single silicon base layer 101, the suede structure layer 102 is uneven in shape, the ultraviolet resistance 1031 is made of an ultraviolet-resistant polycarbonate film, a protective layer 103 is fixedly connected to the top of the suede structure layer 102, the protective layer 103 comprises an ultraviolet-resistant layer 1031 and a scratch-resistant layer 1032, the scratch-resistant layer 1032 is made of polytetrafluoroethylene, the anti-reflective layer 104 is made of a silicon nitride film, the anti-reflection layer 104 is fixedly connected with an anti-reflection layer 105 on the surface, the anti-reflection layer 105 comprises a silicon oxide layer and a zirconium oxide layer which are alternately arranged from top to bottom, the anti-ultraviolet layer 1031 is arranged and is an anti-ultraviolet polycarbonate film which can block ultraviolet rays so as to inhibit the aging of the single silicon substrate 101, the anti-scratch layer 1032 is arranged and is made of polytetrafluoroethylene, so that a good anti-scratch effect can be achieved, the anti-reflection layer 105 is arranged so that the silicon wafer can be contacted with more light rays in a unit area of a solar module as the silicon wafer, the conversion efficiency of the silicon wafer as the solar module is improved, and the silicon wafer body 1, the grid lines 2, the drainage lines 3, the single silicon substrate 101, the textured structure layer 102, the protection layer 103, the anti-ultraviolet layer 1031, the anti-scratch layer 1032, the anti-reflection layer 104 and the anti-reflection layer 105 are matched, the problem that traditional monocrystalline silicon piece is poor in protection performance in the installation process can be effectively solved, the double-sided monocrystalline silicon piece is higher in strength due to the structure, is not prone to cracking in installation, and meanwhile can further reduce light attenuation, so that the absorption efficiency of the monocrystalline silicon piece to sunlight is improved.
During the use, through setting up anti ultraviolet layer 1031, anti ultraviolet layer 1031 is anti ultraviolet polycarbonate film, it can the separation ultraviolet ray, thereby can restrain single silicon substrate 101 ageing, through setting up anti-scratch layer 1032, anti-scratch layer 1032 is polytetrafluoroethylene, thereby can play better anti-scratch effect, through setting up anti-reflection layer 105, make this silicon chip can contact with more light in as solar energy component unit area, conversion efficiency when having promoted this silicon chip as solar energy component, this structure makes this two-sided monocrystalline silicon piece's intensity higher, difficult emergence is cracked when the installation.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. A long-service-life monocrystalline silicon piece comprises a silicon piece body (1), and is characterized in that: the silicon chip comprises a silicon chip body (1), wherein grid lines (2) are uniformly arranged on the surface of the silicon chip body (1), drainage lines (3) are arranged on two sides of the surface of the silicon chip body (1), the drainage lines (3) and the grid lines (2) are arranged in a penetrating mode, the silicon chip body (1) comprises a single silicon base layer (101), a suede structure layer (102) is fixedly connected to the top of the single silicon base layer (101), a protection layer (103) is fixedly connected to the top of the suede structure layer (102), the protection layer (103) comprises an ultraviolet-proof layer (1031) and a scratch-proof layer (1032), an anti-reflection layer (104) is fixedly connected to the surface of the protection layer (103), and an anti-reflection layer (105) is fixedly.
2. A long-life monocrystalline silicon wafer according to claim 1, characterized in that: the suede structure layer (102) is uneven in shape, and the ultraviolet-proof layer (1031) is made of an ultraviolet-proof polycarbonate film.
3. A long-life monocrystalline silicon wafer according to claim 1, characterized in that: the scratch-resistant layer (1032) is made of polytetrafluoroethylene, and the anti-reflection layer (104) is made of a silicon nitride film.
4. A long-life monocrystalline silicon wafer according to claim 1, characterized in that: the anti-reflection layer (105) comprises silicon oxide layers and zirconium oxide layers, and the silicon oxide layers and the zirconium oxide layers are alternately arranged from top to bottom.
5. A long-life monocrystalline silicon wafer according to claim 1, characterized in that: the number of the drainage wires (3) is two.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021337625.4U CN212848419U (en) | 2020-07-09 | 2020-07-09 | Long service life monocrystalline silicon piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021337625.4U CN212848419U (en) | 2020-07-09 | 2020-07-09 | Long service life monocrystalline silicon piece |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212848419U true CN212848419U (en) | 2021-03-30 |
Family
ID=75116092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021337625.4U Expired - Fee Related CN212848419U (en) | 2020-07-09 | 2020-07-09 | Long service life monocrystalline silicon piece |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212848419U (en) |
-
2020
- 2020-07-09 CN CN202021337625.4U patent/CN212848419U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210330 |