CN213340389U

CN213340389U - Monocrystalline silicon piece with good light absorption performance

Info

Publication number: CN213340389U
Application number: CN202021646519.4U
Authority: CN
Inventors: 王婷
Original assignee: Jiangxi Jiushun Technology Co ltd
Current assignee: Jiangxi Jiushun Technology Co ltd
Priority date: 2020-08-10
Filing date: 2020-08-10
Publication date: 2021-06-01
Anticipated expiration: 2030-08-10

Abstract

The utility model discloses a monocrystalline silicon piece that light absorption performance is good, including the monocrystalline silicon piece body, the top fixedly connected with anticorrosion layer of monocrystalline silicon piece body, the top fixedly connected with waterproof layer of anticorrosion layer, the monocrystalline silicon piece body includes P type monocrystalline silicon piece and N type monocrystalline silicon piece, the bottom fixedly connected with metal conducting layer of N type monocrystalline silicon piece, P type monocrystalline silicon piece's top is provided with the silicon layer, the top of silicon layer is provided with the antireflection coating, the top of antireflection coating is provided with the spotlight layer. The utility model discloses a monocrystalline silicon piece body, anti-corrosion coating, waterproof layer, P type monocrystalline silicon piece, N type monocrystalline silicon piece, metal conducting layer, silicon chip layer, antireflection layer and the cooperation on spotlight layer are used, possess the advantage that light absorption performance is good, have solved current monocrystalline silicon piece light absorption performance poor to lead to the problem of monocrystalline silicon piece absorption efficiency low easily.

Description

Monocrystalline silicon piece with good light absorption performance

Technical Field

The utility model relates to a monocrystalline silicon piece technical field specifically is a monocrystalline silicon piece that light absorption performance is good.

Background

Monocrystalline silicon is an active non-metallic element, is an important component of a crystal material, is in the front of the development of new materials, is mainly used as a semiconductor material and utilizes solar photovoltaic power generation, heat supply and the like, is particularly and widely applied in the field of street lamps because solar energy has the advantages of cleanness, environmental protection, convenience and the like, and the existing monocrystalline silicon piece has poor light absorption performance, so that the absorption efficiency of the monocrystalline silicon piece is low easily.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a monocrystalline silicon piece that light absorption performance is good possesses the advantage that light absorption performance is good, has solved current monocrystalline silicon piece light absorption performance poor to lead to the problem of monocrystalline silicon piece absorption inefficiency easily.

In order to achieve the above object, the utility model provides a following technical scheme: the monocrystalline silicon piece with good light absorption performance comprises a monocrystalline silicon piece body, wherein the top of the monocrystalline silicon piece body is fixedly connected with an anti-corrosion layer, the top of the anti-corrosion layer is fixedly connected with a waterproof layer, the monocrystalline silicon piece body comprises a P-type monocrystalline silicon piece and an N-type monocrystalline silicon piece, the bottom of the N-type monocrystalline silicon piece is fixedly connected with a metal conducting layer, a silicon piece layer is arranged at the top of the P-type monocrystalline silicon piece, an anti-reflection layer is arranged at the top of the silicon piece layer, and a light-gathering layer is arranged at the top of the anti-reflection layer.

Preferably, the anti-corrosion layer is uniformly coated on the surface of the monocrystalline silicon wafer body by polyurethane coating, and the waterproof layer is uniformly coated on the surface of the monocrystalline silicon wafer body by acrylic waterproof coating.

Preferably, the silicon wafer layer is made of semiconductor silicon and is circular.

Preferably, the anti-reflection layer is made of single-sided perspective glass, and the thickness of the anti-reflection layer is 0.3 mm-0.6 mm.

Preferably, the light-gathering layer is a black light absorption plate, and the monocrystalline silicon wafer body is octagonal.

Compared with the prior art, the beneficial effects of the utility model are as follows:

1. the utility model discloses a monocrystalline silicon piece body, anti-corrosion coating, waterproof layer, P type monocrystalline silicon piece, N type monocrystalline silicon piece, metal conducting layer, silicon chip layer, antireflection layer and the cooperation on spotlight layer are used, possess the advantage that light absorption performance is good, have solved current monocrystalline silicon piece light absorption performance poor to lead to the problem of monocrystalline silicon piece absorption efficiency low easily.

2. The utility model discloses a set up the anticorrosion layer, can improve the corrosion resistance of monocrystalline silicon piece body, make the monocrystalline silicon piece body be difficult for being corroded, through setting up the waterproof layer, can improve the waterproof nature of monocrystalline silicon piece body to increase the service life of monocrystalline silicon piece body, through setting up the silicon wafer layer, can improve the absorptivity of monocrystalline silicon piece body, through setting up the light-focusing layer, can improve the light-focusing nature of monocrystalline silicon piece body, make the absorbed light energy that the monocrystalline silicon piece body can be better.

Drawings

FIG. 1 is a schematic structural view of the present invention;

FIG. 2 is a partial cross-sectional view of the present invention;

FIG. 3 is a cross-sectional view of a monocrystalline silicon wafer according to the present invention.

In the figure: 1. a monocrystalline silicon wafer body; 2. an anti-corrosion layer; 3. a waterproof layer; 4. a P-type monocrystalline silicon wafer; 5. an N-type monocrystalline silicon wafer; 6. a metal conductive layer; 7. a silicon wafer layer; 8. an anti-reflection layer; 9. and a light-condensing layer.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Referring to fig. 1 to 3, a monocrystalline silicon wafer with good light absorption performance comprises a monocrystalline silicon wafer body 1, an anti-corrosion layer 2 is fixedly connected to the top of the monocrystalline silicon wafer body 1, the anti-corrosion layer 2 is arranged to improve the corrosion resistance of the monocrystalline silicon wafer body 1, so that the monocrystalline silicon wafer body 1 is not easily corroded, a waterproof layer 3 is fixedly connected to the top of the anti-corrosion layer 2, the waterproof layer 3 is arranged to improve the waterproof property of the monocrystalline silicon wafer body 1, so as to increase the service life of the monocrystalline silicon wafer body 1, the monocrystalline silicon wafer body 1 comprises a P-type monocrystalline silicon wafer 4 and an N-type monocrystalline silicon wafer 5, a metal conductive layer 6 is fixedly connected to the bottom of the N-type monocrystalline silicon wafer 5, a silicon sheet layer 7 is arranged on the top of the P-type monocrystalline silicon wafer 4, the absorptivity of the monocrystalline silicon wafer body 1 can be improved by arranging the silicon sheet layer 7, and, the top of the anti-reflection layer 8 is provided with a light-gathering layer 9, the light-gathering property of the monocrystalline silicon wafer body 1 can be improved by arranging the light-gathering layer 9, the monocrystalline silicon wafer body 1 can better absorb light energy, the anti-corrosion layer 2 is uniformly coated on the surface of the monocrystalline silicon wafer body 1 by polyurethane coating, the waterproof layer 3 is uniformly coated on the surface of the monocrystalline silicon wafer body 1 by acrylic waterproof coating, the silicon wafer layer 7 is made of semiconductor silicon, the silicon wafer layer 7 is circular, the anti-reflection layer 8 is made of single-sided perspective glass, the thickness of the anti-reflection layer 8 is 0.3 mm-0.6 mm, the light-gathering layer 9 is a black light-absorbing plate, the monocrystalline silicon wafer body 1 is octagonal, and the anti-corrosion layer 2, the waterproof layer 3, the P-type monocrystalline silicon wafer 4, the N-type monocrystalline silicon wafer 5, the metal conductive layer 6, the silicon layer 7, the anti-reflection, the method has the advantage of good light absorption performance, and solves the problem that the existing monocrystalline silicon piece has poor light absorption performance, so that the absorption efficiency of the monocrystalline silicon piece is low easily.

During the use, through anti-corrosion layer 2, can improve monocrystalline silicon piece body 1's corrosion resistance, make monocrystalline silicon piece body 1 difficult by the corruption, through waterproof layer 3, can improve monocrystalline silicon piece body 1's waterproof nature to increase monocrystalline silicon piece body 1's life, through silicon layer 7, can improve monocrystalline silicon piece body 1's absorptivity, through spotlight layer 9, can improve monocrystalline silicon piece body 1's spotlight nature, make monocrystalline silicon piece body 1 absorption light energy that can be better.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. A monocrystalline silicon piece with good light absorption performance comprises a monocrystalline silicon piece body (1) and is characterized in that: the anti-corrosion silicon wafer comprises a monocrystalline silicon wafer body (1), wherein the top of the monocrystalline silicon wafer body (1) is fixedly connected with an anti-corrosion layer (2), the top of the anti-corrosion layer (2) is fixedly connected with a waterproof layer (3), the monocrystalline silicon wafer body (1) comprises a P-type monocrystalline silicon wafer (4) and an N-type monocrystalline silicon wafer (5), the bottom of the N-type monocrystalline silicon wafer (5) is fixedly connected with a metal conducting layer (6), the top of the P-type monocrystalline silicon wafer (4) is provided with a silicon wafer layer (7), the top of the silicon wafer layer (7) is provided with an anti-reflection layer (8), and the top of the anti-reflection layer.

2. A single-crystal silicon wafer having a good light absorption property according to claim 1, wherein: the anti-corrosion layer (2) is uniformly coated on the surface of the monocrystalline silicon wafer body (1) by polyurethane coating, and the waterproof layer (3) is uniformly coated on the surface of the monocrystalline silicon wafer body (1) by acrylic waterproof coating.

3. A single-crystal silicon wafer having a good light absorption property according to claim 1, wherein: the silicon wafer layer (7) is made of semiconductor silicon materials, and the silicon wafer layer (7) is circular.

4. A single-crystal silicon wafer having a good light absorption property according to claim 1, wherein: the anti-reflection layer (8) is made of single-side perspective glass, and the thickness of the anti-reflection layer (8) is 0.3 mm-0.6 mm.

5. A single-crystal silicon wafer having a good light absorption property according to claim 1, wherein: the light-gathering layer (9) is a black light-absorbing plate, and the monocrystalline silicon wafer body (1) is octagonal.