CN212846535U - Over-temperature protection circuit - Google Patents
Over-temperature protection circuit Download PDFInfo
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- CN212846535U CN212846535U CN202022409329.7U CN202022409329U CN212846535U CN 212846535 U CN212846535 U CN 212846535U CN 202022409329 U CN202022409329 U CN 202022409329U CN 212846535 U CN212846535 U CN 212846535U
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Abstract
The utility model relates to an over-temperature protection circuit, which comprises a first power supply voltage, a second power supply voltage, a reference voltage, a first transistor, a second transistor, a third transistor, a fourth transistor and a fifth transistor; the circuit also comprises a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor and a seventh resistor. The utility model discloses a set up a plurality of transistors and a plurality of resistance for resistance partial pressure is controlled the circuit, need not other high accuracy devices, makes whole circuit stop work when the high temperature, reaches the effect of protection device.
Description
Technical Field
The utility model belongs to the technical field of integrated electronic circuit, concretely relates to excess temperature protection circuit.
Background
With the continuous development of integrated circuit technology, the integration level of an integrated circuit is continuously increased, the power supply from a peripheral power supply to the inside of a chip needs to realize voltage reduction or enhance the stability of the power supply through an integrated module or a circuit inside the chip, the number of elements integrated on a single chip is more and more, and the power consumption of the chip is also continuously increased.
In the related art, power consumption inevitably occurs during the chip re-working process, so that the temperature of the chip rises, and when the temperature of the chip is too high, the stability and reliability of the chip are damaged.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model aims at overcoming the not enough of prior art, provide an excess temperature protection circuit in order to solve when current chip temperature is too high, cause the problem of damage to stability, the reliability of chip.
In order to realize the above purpose, the utility model adopts the following technical scheme: an over-temperature protection circuit comprising: a first power supply voltage, a second power supply voltage, a reference voltage, a first transistor, a second transistor, a third transistor, a fourth transistor, and a fifth transistor;
a collector of the first transistor is connected with a first power voltage, a base of the first transistor is connected with a reference voltage, an emitter of the first transistor is connected with one end of a first resistor, and the other end of the first resistor is respectively connected with one end of a second resistor, one end of a third resistor and the base of the second transistor; the collector of the second transistor is respectively connected with one end of a fourth resistor and the base of the third transistor; an emitter of the second transistor is grounded; a collector of the third transistor is respectively connected with one end of a fifth resistor, a base of a fourth transistor and the collector, an emitter of the third transistor is grounded, an emitter of the fourth transistor is connected with one end of a sixth resistor, and the other end of the sixth resistor is connected with a seventh resistor and used as output voltage;
the collector of the third transistor is also connected with the base and the collector of a fifth transistor, and the emitter of the fifth transistor is connected with the other end of the third resistor;
the other end of the second resistor and the other end of the seventh resistor are both grounded; the other end of the fourth resistor and the other end of the fifth resistor are both connected with a second power supply voltage.
Further, the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor all adopt:
and a triode.
Further, the triode adopts:
an NPN type triode.
Further, the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor all adopt:
a field effect transistor or a MOS transistor.
Further, the first resistor, the second resistor, the third resistor, the fourth resistor, the fifth resistor, the sixth resistor and the seventh resistor are all constant value resistors.
The utility model adopts the above technical scheme, the beneficial effect that can reach includes:
the over-temperature protection circuit provided by the embodiment of the application comprises a first power supply voltage, a second power supply voltage, a reference voltage, a first transistor, a second transistor, a third transistor, a fourth transistor and a fifth transistor; the circuit also comprises a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor and a seventh resistor. The utility model discloses a set up a plurality of transistors and a plurality of resistance for resistance partial pressure is controlled the circuit, need not other high accuracy devices, makes whole circuit stop work when the high temperature, reaches the effect of protection device.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of the over-temperature protection circuit of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be described in detail below. It is to be understood that the embodiments described are only some embodiments of the invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
A specific over-temperature protection circuit provided in the embodiment of the present application is described below with reference to the drawings.
As shown in fig. 1, the utility model provides an excess temperature protection circuit, include: a first power supply voltage VDD1, a second power supply voltage VDD2, a reference voltage VREF, a first transistor Q1, a second transistor Q2, a third transistor Q3, a fourth transistor Q4, and a fifth transistor Q5;
a collector of the first transistor Q1 is connected to a first power voltage VDD1, a base of the first transistor Q1 is connected to a reference voltage VREF, an emitter of the first transistor Q1 is connected to one end of a first resistor R1, and the other end of the first resistor R1 is connected to one end of a second resistor R2, one end of a third resistor R3, and a base of the second transistor Q2; the collector of the second transistor Q2 is respectively connected with one end of a fourth resistor R4 and the base of a third transistor Q3; the emitter of the second transistor Q2 is grounded; a collector of the third transistor Q3 is connected to one end of a fifth resistor R5, a base of a fourth transistor Q4 and a collector, respectively, an emitter of the third transistor Q3 is grounded, an emitter of the fourth transistor Q4 is connected to one end of a sixth resistor R6, and the other end of the sixth resistor R6 is connected to a seventh resistor R7 to serve as an output voltage;
the collector of the third transistor Q3 is also connected with the base and the collector of a fifth transistor Q5, and the emitter of the fifth transistor Q5 is connected with the other end of a third resistor R3;
the other end of the second resistor R2 and the other end of the seventh resistor R7 are both grounded; the other end of the fourth resistor R4 and the other end of the fifth resistor R5 are both connected with a second power voltage VDD 2.
The working principle of the over-temperature protection circuit provided by the application is that OUT outputs a low level within a normal working temperature range. A reference VREF signal as a reference voltage VREF is input to the NPN transistor Q1, and the voltage is kept stable at about 1.2V in the entire temperature range. The collector current of the first transistor Q1 increases with temperature and the current increases nearly linearly. As the temperature increases, the current in the branch Q1 increases, and the current flowing from the BE junction of Q1 also increases. When the temperature continues to rise, the voltage of the first resistor R1 and the voltage of the second resistor R2 continuously increase, so that the base voltage of the second transistor Q2 rises and is turned on, the base voltage of the third transistor Q3 is reduced due to the turning on of the second transistor Q2, so that the third transistor Q3 is turned off, the base voltage of the fourth transistor Q4 is raised, so that the fourth transistor Q4 is turned on, and the current passes through the sixth resistor R6 and the seventh resistor R7, and because the OUT output is equal to the resistance value of the seventh resistor R7 multiplied by the current flowing through, the output voltage of the output signal OUT rises; and finally, the voltage signal output by the OUT is used as a control signal of the main loop, and when the temperature is too high, the whole LDO stops working, so that the effect of protecting the device is achieved.
In addition, the fifth transistor Q5 in the circuit of the present application serves as an auxiliary structure, and the temperature sensitivity of the whole circuit and the temperature value of the over-temperature protection can be adjusted by adjusting the size of the fifth transistor Q5.
Preferably, the first transistor Q1, the second transistor Q2, the third transistor Q3, the fourth transistor Q4 and the fifth transistor Q5 all adopt: and a triode.
Preferably, the triode adopts: an NPN type triode.
It will be appreciated that the collector current cannot be increased indefinitely, as limited by the resistance Rc (Rc is a fixed value, then the maximum current is U/Rc, where U is the supply voltage). When the base current is increased and the collector current cannot be increased continuously, the triode enters a saturation state. The general criterion for judging whether the triode is saturated is as follows: ib β > Ic. After the transistor enters the saturation state, the voltage between the collector and the emitter of the transistor will be small, which is understood as a switch being closed. Thus, the triode can be used as a switch: when the base current is 0, the collector current of the triode is 0 (which is called triode cut-off), which is equivalent to switch-off; when the base current is so large that the triode is saturated, it is equivalent to the switch being closed. Such a transistor is a switching transistor.
Specifically, in the present application, when the input voltage is lower than the reference voltage VREF, the base of the NPN transistor has no current, the NPN transistor is turned off, and when the input voltage is higher than the reference voltage VREF, the base of the NPN transistor generates a current, and the base voltage of the NPN transistor is the regulated voltage VREF.
Preferably, the first transistor Q1, the second transistor Q2, the third transistor Q3, the fourth transistor Q4 and the fifth transistor Q5 all adopt:
a field effect transistor or a MOS transistor.
It is understood that the transistor in the present application may also adopt other elements, and the present application is not limited thereto.
Preferably, the first resistor R1, the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, the sixth resistor R6 and the seventh resistor R7 are all constant resistors.
It should be noted that, in the present application, the first resistor R1, the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, the sixth resistor R6, and the seventh resistor R7 may be replaced according to actual needs, so as to perform over-temperature protection on different chips.
To sum up, the utility model provides an excess temperature protection circuit is through setting up a plurality of transistors and a plurality of resistance for resistance partial pressure is controlled the circuit, need not other high accuracy devices, makes whole circuit stop work when the high temperature, reaches the effect of protection device.
The above description is only for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and all should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (5)
1. An over-temperature protection circuit, comprising: a first power supply voltage, a second power supply voltage, a reference voltage, a first transistor, a second transistor, a third transistor, a fourth transistor, and a fifth transistor;
a collector of the first transistor is connected with a first power voltage, a base of the first transistor is connected with a reference voltage, an emitter of the first transistor is connected with one end of a first resistor, and the other end of the first resistor is respectively connected with one end of a second resistor, one end of a third resistor and the base of the second transistor; the collector of the second transistor is respectively connected with one end of a fourth resistor and the base of the third transistor; an emitter of the second transistor is grounded; a collector of the third transistor is respectively connected with one end of a fifth resistor, a base of a fourth transistor and the collector, an emitter of the third transistor is grounded, an emitter of the fourth transistor is connected with one end of a sixth resistor, and the other end of the sixth resistor is connected with a seventh resistor and used as output voltage;
the collector of the third transistor is also connected with the base and the collector of a fifth transistor, and the emitter of the fifth transistor is connected with the other end of the third resistor;
the other end of the second resistor and the other end of the seventh resistor are both grounded; the other end of the fourth resistor and the other end of the fifth resistor are both connected with a second power supply voltage.
2. The over-temperature protection circuit according to claim 1, wherein the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor each employ:
and a triode.
3. The over-temperature protection circuit of claim 2, wherein the transistor employs:
an NPN type triode.
4. The over-temperature protection circuit according to claim 1, wherein the first transistor, the second transistor, the third transistor, the fourth transistor, and the fifth transistor each employ:
a field effect transistor or a MOS transistor.
5. The over-temperature protection circuit according to claim 1,
the first resistor, the second resistor, the third resistor, the fourth resistor, the fifth resistor, the sixth resistor and the seventh resistor are all constant-value resistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022409329.7U CN212846535U (en) | 2020-10-27 | 2020-10-27 | Over-temperature protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022409329.7U CN212846535U (en) | 2020-10-27 | 2020-10-27 | Over-temperature protection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212846535U true CN212846535U (en) | 2021-03-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022409329.7U Active CN212846535U (en) | 2020-10-27 | 2020-10-27 | Over-temperature protection circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212846535U (en) |
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2020
- 2020-10-27 CN CN202022409329.7U patent/CN212846535U/en active Active
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