CN215811284U - Wireless temperature measurement circuit - Google Patents

Wireless temperature measurement circuit Download PDF

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Publication number
CN215811284U
CN215811284U CN202121174277.8U CN202121174277U CN215811284U CN 215811284 U CN215811284 U CN 215811284U CN 202121174277 U CN202121174277 U CN 202121174277U CN 215811284 U CN215811284 U CN 215811284U
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effect transistor
field effect
module
voltage
main control
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CN202121174277.8U
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Chinese (zh)
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梁忠伟
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Xiamen Leelen High Voltage Electric Co ltd
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Xiamen Leelen High Voltage Electric Co ltd
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Abstract

The utility model provides a wireless temperature measurement circuit which comprises a main control chip, a power storage module, a voltage control module, a temperature measurement module and a wireless module, wherein the power storage module is connected with the voltage control module, the voltage control module is connected with the power input end of the main control chip, and the temperature measurement module and the wireless module are respectively connected with the main control chip. The second field effect transistor is adopted to control the on and off of the third field effect transistor, the voltage comparison chip and the peripheral circuit thereof are adopted to control the starting voltage, the third field effect transistor is switched on when the electric storage module reaches the appointed switching-on voltage, the main control chip and other modules are started to work, and the electric energy loss when the electric storage module is not started is reduced. Moreover, only one voltage comparison chip is needed, and compared with the traditional mode of adopting two or more voltage comparison chips, the circuit is optimized.

Description

Wireless temperature measurement circuit
Technical Field
The utility model relates to the field of CT power taking circuits, in particular to a circuit capable of being applied to CT power taking in a wide current range.
Background
The existing circuit for taking power by CT in a wide current range is usually used for taking power in a large-current and multi-energy scene, and the adaptive CT power taking device is large in size and large in power consumption. The CT power taking mode is difficult to be directly applied to scenes needing smaller volume and low power consumption.
In view of the above, the inventors of the present invention have made a study of the prior art and then have made the present application.
SUMMERY OF THE UTILITY MODEL
The utility model provides a wireless temperature measurement circuit, aiming at improving the voltage control of the wireless temperature measurement circuit and saving the electric energy loss.
In order to solve the technical problem, the utility model provides a wireless temperature measurement circuit which comprises a main control chip, an electric storage module, a voltage control module, a temperature measurement module and a wireless module, wherein the electric storage module is connected with the voltage control module, the voltage control module is connected with the power input end of the main control chip, and the temperature measurement module and the wireless module are respectively connected with the main control chip.
In an embodiment, the voltage control module includes a voltage comparison chip, a second field effect transistor and a third field effect transistor, an input end of the voltage comparison chip is connected to the power storage module, an output end of the voltage comparison chip is connected to a gate of the second field effect transistor, a drain of the second field effect transistor is connected to a gate of the third field effect transistor, a drain of the third field effect transistor is connected to the power storage module, and a source of the third field effect transistor is connected to a voltage input end of the main control chip.
In an embodiment, the voltage control module includes a first field effect transistor, the first field effect transistor and a plurality of resistors form an energy consumption unit, a gate and a drain of the first field effect transistor are connected to the output terminal of the voltage comparison chip, and a source of the first field effect transistor is grounded.
In an embodiment, the low voltage output end of the main control chip is connected to a fourth diode, and a cathode of the fourth diode is connected to a gate of the second field effect transistor.
In an embodiment, the detection pin of the main control chip is connected to a fifth diode, and a cathode of the fifth diode is connected to the output end of the voltage comparison chip.
In an embodiment, a sixth diode is disposed between the output terminal of the voltage comparison chip and the gate of the second field effect transistor, and the sixth diode is turned on toward the second field effect transistor.
In an embodiment, the circuit further includes a power consumption module, and the power consumption module is connected to the main control chip.
By adopting the technical scheme, the utility model can obtain the following technical effects:
the second field effect transistor is adopted to control the on and off of the third field effect transistor, the voltage comparison chip and the peripheral circuit thereof are adopted to control the starting voltage, the third field effect transistor is switched on when the electric storage module reaches the appointed switching-on voltage, the main control chip and other modules are started to work, and the electric energy loss when the electric storage module is not started is reduced. Moreover, only one voltage comparison chip is needed, and compared with the traditional mode of adopting two or more voltage comparison chips, the circuit is optimized.
Through being connected to the grid of second field effect transistor with a voltage output of main control chip, can keep switching on of second field effect transistor, third field effect transistor in the sleep state after the start-up, be convenient for the quick awakening of indirectness detection.
The first field effect transistor and other resistors are arranged at the output of the voltage comparison chip to form an energy consumption unit, so that the second field effect transistor can not be conducted through a diode when the voltage comparison chip slightly leaks electricity, electric energy can be consumed when overvoltage occurs, and the voltage is stabilized within a certain range. In addition, the main control chip is also connected with a power consumption module, and the power consumption module can also consume electric energy when the voltage is higher, so that an overvoltage protection effect is achieved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a block diagram of a wireless temperature measurement circuit according to an embodiment of the present invention;
fig. 2 is a circuit diagram of a voltage control module and a main control chip in a wireless temperature measurement circuit according to an embodiment of the utility model.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings of the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the utility model, as claimed, but is merely representative of selected embodiments of the utility model. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Referring to fig. 1 and 2, the wireless temperature measurement circuit includes a main control chip U3, a power storage module, a voltage control module, a temperature measurement module, and a wireless module, wherein the power storage module is connected to the voltage control module, the voltage control module is connected to a power input end of the main control chip, and the temperature measurement module and the wireless module are respectively connected to the main control chip.
The voltage control module comprises a voltage comparison chip U1, a first field effect transistor Q1, a second field effect transistor Q2 and a third field effect transistor Q3, and the input end of the voltage comparison chip U1 is connected with the power storage module. The first field-effect tube Q1 and a plurality of resistors form an energy consumption unit, the grid and the drain of the first field-effect tube Q1 are connected with the output end of the voltage comparison chip U1, and the source of the first field-effect tube Q1 is grounded. The output end of the voltage comparison chip U1 is connected with the grid of the second field effect transistor Q2, the drain electrode of the second field effect transistor Q2 is connected with the grid of the third field effect transistor Q3, the drain electrode of the third field effect transistor Q3 is connected with the electric power storage module, and the source electrode of the third field effect transistor Q3 is connected with the voltage input end of the main control chip U3.
Preferably, the low voltage output terminal of the main control chip U3 is connected to the fourth diode D4, and the cathode of the fourth diode D4 is connected to the gate of the second fet Q2. The detection pin of the main control chip U3 is connected with the fifth diode D5, and the cathode of the fifth diode D5 is connected with the output end of the voltage comparison chip U1. A sixth diode D6 is disposed between the output terminal of the voltage comparing chip U1 and the gate of the second fet Q2, and the sixth diode D6 is turned on toward the second fet Q2.
Specifically, the voltage control module includes a voltage comparison chip U1, a first field effect transistor Q1, a second field effect transistor Q2, a third field effect transistor Q3, a fourth diode D4, a fifth diode D5, a sixth diode D6, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, and an eighteenth capacitor C18.
The Vin pin of the voltage comparison chip U1 is connected with the electric power storage module, the GND pin of the voltage comparison chip U1 is grounded, and the Vin pin of the voltage comparison chip U1 is connected with the gate of the third field-effect transistor Q3. The pin Vout of the voltage comparison chip U1 is connected with one end of a second resistor R2 and one end of a third resistor R3, the other end of the second resistor R2 is connected with the grid of a first field-effect tube Q1, the other end of the third resistor R3 is connected with the drain of a first field-effect tube Q1, and the source of the first field-effect tube Q1 is grounded.
The pin Vout of the voltage comparison chip U1 is connected with the anode of a sixth diode D6, the cathode of the sixth diode D6 is connected with the gate of a second field effect transistor Q2, the drain of the second field effect transistor Q2 is connected with the gate of a third field effect transistor Q3, and the source of the second field effect transistor Q2 is grounded. The drain electrode of the third field effect transistor Q3 is connected with the electric power storage module, and the source electrode of the third field effect transistor Q3 is connected with the VCC-MCU pin of the main control chip U3.
An IO-CHK pin of the main control chip U3 is connected with an anode of the fifth diode D5, and a cathode of the fifth diode D5 is connected with a Vout pin of the voltage comparison chip U1. An IO-PWR pin of the main control chip U3 is connected with the anode of the fourth diode D4, and the cathode of the fourth diode D4 is connected with the gate of the second field effect transistor Q2. One end of the eighteenth capacitor is connected to the gate of the second field effect transistor Q2, and the other end is grounded. One end of the fifth resistor R5 is connected to the gate of the second fet Q2, and the other end is grounded. One end of the fourth resistor R4 is connected to the gate of the third fet Q3, and the other end of the fourth resistor R4 is connected to the drain of the third fet Q3.
Pins PA4-PA7, PB0 and PA11 of the main control chip U3 are connected with the wireless module, a pin PA1 of the main control chip U3 is connected with the temperature measuring module, and a pin PB1 of the main control chip U3 is connected with the power consumption module. The main control chip U3 reserves a program writing interface and a detection interface.
The PA2 and PA3 of the main control chip U3 are connected with a tenth resistor R10, and the other end of the tenth resistor R10 is connected with the source electrode of the third field effect transistor Q3. The pin PF2-NRST of the main control chip U3 is connected with the twelfth capacitor C12, and the other end of the twelfth capacitor C12 is grounded. The PA2 and VDD pins of the main control chip U3 are connected with the source electrode of the third field effect transistor Q3. The VDD pin of the main control chip U3 is connected with the eleventh capacitor C11, the other end of the eleventh capacitor C11 is grounded, and the VSS pin of the main control chip U3 is grounded. The PA14-BOOTO pin of the main control chip U3 is connected with the sixteenth resistor R16, and the other end of the sixteenth resistor R16 is grounded.
The power consumption module can be composed of a plurality of resistors or a circuit module composed of other power consumption components. The wireless module may employ WiFi technology while including associated peripheral circuitry. The temperature measuring module can comprise a temperature sensor and related peripheral circuits. The power storage module is connected with the power supply module.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (6)

1. The wireless temperature measurement circuit is characterized by comprising a main control chip, a power storage module, a voltage control module, a temperature measurement module and a wireless module, wherein the power storage module is connected with the voltage control module, the voltage control module is connected with the power input end of the main control chip, the temperature measurement module and the wireless module are respectively connected with the main control chip, the voltage control module comprises a voltage comparison chip, a second field effect transistor and a third field effect transistor, the input end of the voltage comparison chip is connected with the power storage module, the output end of the voltage comparison chip is connected with the grid electrode of the second field effect transistor, the drain electrode of the second field effect transistor is connected with the grid electrode of the third field effect transistor, the drain electrode of the third field effect transistor is connected with the power storage module, and the source electrode of the third field effect transistor is connected with the voltage input end of the main control chip.
2. The circuit of claim 1, wherein the voltage control module comprises a first field effect transistor, the first field effect transistor and a plurality of resistors form a power consumption unit, a gate and a drain of the first field effect transistor are connected to the output end of the voltage comparison chip, and a source of the first field effect transistor is grounded.
3. The circuit of claim 1, wherein the low voltage output terminal of the main control chip is connected to a fourth diode, and a cathode of the fourth diode is connected to a gate of the second field effect transistor.
4. The circuit of claim 1, wherein the detection pin of the main control chip is connected to a fifth diode, and a cathode of the fifth diode is connected to the output terminal of the voltage comparison chip.
5. The circuit of claim 1, wherein a sixth diode is disposed between the output terminal of the voltage comparison chip and the gate of the second fet, and the sixth diode is turned on toward the second fet.
6. The circuit of claim 1, further comprising a power consuming module, wherein the power consuming module is connected to the main control chip.
CN202121174277.8U 2021-05-28 2021-05-28 Wireless temperature measurement circuit Active CN215811284U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202121174277.8U CN215811284U (en) 2021-05-28 2021-05-28 Wireless temperature measurement circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202121174277.8U CN215811284U (en) 2021-05-28 2021-05-28 Wireless temperature measurement circuit

Publications (1)

Publication Number Publication Date
CN215811284U true CN215811284U (en) 2022-02-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202121174277.8U Active CN215811284U (en) 2021-05-28 2021-05-28 Wireless temperature measurement circuit

Country Status (1)

Country Link
CN (1) CN215811284U (en)

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