CN212713846U - Silicon carbide single crystal growth equipment - Google Patents
Silicon carbide single crystal growth equipment Download PDFInfo
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- CN212713846U CN212713846U CN202021350067.5U CN202021350067U CN212713846U CN 212713846 U CN212713846 U CN 212713846U CN 202021350067 U CN202021350067 U CN 202021350067U CN 212713846 U CN212713846 U CN 212713846U
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- silicon carbide
- single crystal
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Abstract
The utility model discloses a carborundum single crystal growth equipment, include: an apparatus body; the heat insulation layer is arranged inside the equipment body; the induction coil is arranged around the equipment body or the heat insulation layer; the material bearing crucible is arranged inside the heat insulation layer; a heat transfer body; the top of the heat-insulating layer is provided with an opening, the bottom of the opening is the top end of the material-bearing crucible, and the opening is used for accommodating a heat-insulating structure; the heat insulation structure comprises a rotary lifting mechanism and a heat insulation screen, wherein the heat insulation screen is formed by stacking at least two layers of heat insulation boards. The utility model discloses can reduce the inside stress of crystal, improve the quality of crystal.
Description
Technical Field
The utility model relates to the technical field of semiconductors, in particular to carborundum single crystal growth equipment.
Background
At present, along with the growth of crystals, the downward movement of a crystallization interface causes the deviation between the actual temperature and the ideal temperature of a crystallization surface, the deviation between the actual temperature gradient and the ideal temperature gradient of the front edge of the crystallization interface occurs, if the temperature in a crucible is adjusted only by moving the crucible or an induction coil, a large number of practices show that the method is a feasible mode with high complexity and high process difficulty, has no practicability, and changes of induced electromotive force, not simple linear increase and decrease, and the result is related to a plurality of factors such as initial position, induction frequency, heating materials, coil size and the like. On the other hand, as the size of the crystal increases, the diameter of the thermal field is also expanding, and in the prior art, the crucible or the heat transfer body cannot be moved to change the intrinsic temperature distribution, i.e., the temperature distribution with low intermediate temperature and high ambient temperature, and the temperature difference/temperature gradient generated by the temperature distribution cannot be completely optimized by the movement of the crucible or the heat transfer body, so that the inside of the crystal has large stress. At present, no better temperature regulating equipment is used for regulating the temperature gradient in the crucible, and most of the temperature regulating equipment is complex in structure and complex in operation.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned prior art's defect, the utility model provides a carborundum single crystal growth equipment, the utility model discloses can reduce crystal internal stress, improve the quality of crystal.
To achieve the above and other objects, the present invention provides a silicon carbide single crystal growth apparatus, comprising:
an apparatus body;
the heat insulation layer is arranged inside the equipment body;
the induction coil is arranged around the equipment body or the heat insulation layer;
the material bearing crucible is arranged inside the heat insulation layer and used for placing a silicon carbide raw material;
the heat transfer body is positioned in the heat insulation layer and arranged around the material bearing crucible;
the top of the heat-insulating layer is provided with an opening, the bottom of the opening is the top end of the material-bearing crucible, and the opening is used for accommodating a heat-insulating structure;
the heat insulation structure comprises a rotary lifting mechanism and a heat insulation screen, wherein the heat insulation screen is formed by stacking at least two layers of heat insulation boards, and the distance between every two adjacent layers of heat insulation boards is 1-15 mm;
wherein, in the vertical direction of opening place, the heat-insulating structure makes rotation and elevating movement.
In one embodiment, the heat insulation structure rotates and moves up and down within the range of 0.5 mm-500 mm.
In one embodiment, the thickness of the heat insulation plate is 0.2 mm-2 mm, and each adjacent heat insulation plate is connected through a graphite column.
In one embodiment, the heat shield is cylindrical and has a through hole.
In one embodiment, the through holes are distributed in a central region of the heat insulation plate.
In one embodiment, the through holes on every two adjacent layers of the heat insulation boards are communicated with each other.
In one embodiment, between any two adjacent layers of the heat insulation boards, the diameter of the through hole on the heat insulation board positioned relatively above is larger than that of the through hole on the heat insulation board positioned relatively below.
In one embodiment, the diameter of the through hole is 3 mm to 10 mm.
In one embodiment, the diameter of the heat shield is 10 mm to 300 mm
In one embodiment, the heat shield is in an inverted truncated cone shape, and the heat shield does not have a through hole.
The utility model discloses in, provide a carborundum single crystal growth equipment, wherein, at the crystal growth in-process, through adjusting rotatory elevating system connects the upper and lower position of heat shield has changed hold material crucible top with visual radiation area between the equipment body inner wall has changed hold the heat dissipation condition at material crucible top, adjusted hold the inside temperature gradient of material crucible. The utility model discloses can also be through rotatory the heat shield makes the alternating opening and shutting of through-hole on the heat shield, adjusted hold material crucible top with the heat transfer time of equipment body inner wall has changed hold the heat dissipation condition at material crucible top, adjusted hold the inside temperature gradient of material crucible. The utility model discloses an above two kinds of modes have changed hold the effective thermal resistance at material crucible top, realized hold the regulation of the inside temperature gradient of material crucible, optimized the shape and the growth temperature at crystal crystallization interface, reduced crystal internal stress, reduced the technology degree of difficulty, promoted the quality of crystal.
Drawings
FIG. 1 is a schematic structural view of an apparatus for growing a silicon carbide single crystal according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a heat shield having through holes according to an embodiment of the present invention;
fig. 3 is a schematic cross-sectional view of a heat shield without through holes according to an embodiment of the present invention.
Description of the symbols
101 equipment body
102 insulating layer
103 induction coil
104 material-bearing crucible
105 heat transfer body
106 opening
107 heat shield
1071 Heat insulation Board
1072 through hole
108 rotating and lifting mechanism
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The present invention can also be implemented or applied through other different specific embodiments, and various details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the invention in a schematic manner, and only the components related to the invention are shown in the drawings rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, quantity and proportion of the components in actual implementation may be changed at will, and the layout of the components may be more complicated.
In the present invention, it should be noted that, as the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. appear, the indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, but does not indicate or imply that the indicated device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application. Furthermore, the terms "first" and "second," if any, are used for descriptive and distinguishing purposes only and are not to be construed as indicating or implying relative importance.
The utility model provides a carborundum single crystal growth equipment, through adjusting rotatory elevating system connects the upper and lower position of heat shield has changed hold material crucible top with visual radiation area between the equipment body inner wall has changed hold the heat dissipation condition at material crucible top, adjusted hold the inside temperature gradient of material crucible. The utility model discloses still through rotatory the heat shield makes the alternating opening and shutting of through-hole on the heat shield, has adjusted hold material crucible top with the heat transfer time of equipment body inner wall has changed hold the heat dissipation condition at material crucible top, adjusted hold the inside temperature gradient of material crucible.
Referring to FIG. 1, in one embodiment, the silicon carbide single crystal growth apparatus includes, but is not limited to, an apparatus body 101, a heat insulating layer 102, an induction coil 103, a material holding crucible 104, a heat transfer body 105, and a heat insulating structure. The utility model discloses can directly adjust the temperature gradient who holds in the material crucible 104 to reduce the inside stress of crystal, thereby improve the quality of crystal.
Referring to fig. 1, in an embodiment, the apparatus body 101 is, for example, a stainless steel double-layer water-cooling wall (disposed outside the induction coil 103), also is, for example, a quartz tube double-layer water-cooling wall (disposed inside the induction coil 103), has, for example, a quartz tube single-layer air-cooling wall (disposed inside the induction coil 103), and is, for example, another container suitable for the present invention.
Referring to fig. 1, in an embodiment, the insulating layer 102 is disposed inside the apparatus body 101, for example, the insulating layer 102 is used for ensuring a high temperature state inside the material holding crucible 104, and the material holding crucible 104 is disposed inside the insulating layer 102 and used for placing a silicon carbide raw material. The material of the insulating layer 102 is, for example, an insulating material, specifically, a graphite insulating material, which includes, but is not limited to, isostatic graphite, carbon-carbon composite, graphite fiber, graphite hard felt, or graphite soft felt. The induction coil 103 is disposed around the apparatus body 101, or the induction coil 103 is disposed around the insulating layer 102, for example. The induction coil 103 is heated by induction, and the induction coil 103 transfers electric energy to the heat transfer body 105. The heat transfer body 105 is located inside the insulating layer 102 and disposed around the material holding crucible 104, the heat transfer body 105 is made of, for example, an electrically conductive material, specifically, a graphene material, and the heat transfer body 105 converts electrical energy into heat energy and transfers the heat energy to the material holding crucible 104. Above the insulating layer 102, for example, the thermal insulation structure is provided, and the thermal insulation structure is used for adjusting the temperature gradient in the material holding crucible 104, specifically, the temperature gradient in the material holding crucible 104 is adjusted by changing the visible radiation area between the top of the material holding crucible 104 and the inside of the apparatus body 101. An opening 106 is formed in the top of the insulating layer 102, the bottom of the opening 106 is the top end of the material holding crucible 104, the opening 106 is used for accommodating the heat insulation structure, the position of the heat insulation screen 107 is matched for lifting, and the heat insulation structure can be completely or partially overlapped with the opening 106. The diameter of the bottom surface of the opening 106 is, for example, 10 mm to 300 mm, specifically, for example, 10 mm, 25 mm, 50 mm, 80 mm, 100 mm, 120 mm, 150 mm, 200 mm, 250 mm, 300 mm, or other values suitable for the present invention. During the crystal growth process, a certain gap is kept between the heat insulation structure and the top end of the material bearing crucible 104, for example, the vertical distance between the heat insulation structure and the top end of the material bearing crucible 104 is 0.5 mm-500 mm.
Referring to fig. 1, in an embodiment, the heat insulation structure includes, but is not limited to, a rotary lifting mechanism 108 and a heat shield 107, the rotary lifting mechanism 108 can drive the heat shield 107 to rotate and lift, so that the heat shield 107 can lift while rotating, and specifically, in a vertical direction of the opening 106, the heat shield 107 can rotate and lift. The rotary elevating mechanism 108 can perform only an elevating function. The heat insulation structure rotates and moves up and down in a range of 0.5mm to 500 mm, for example. In addition, a uniform heat radiation effect can be obtained by rotating the heat shield 107, the temperature gradient in the material holding crucible 104 can be increased by raising the position of the heat shield, and the temperature gradient can be decreased by lowering the position of the heat shield 107. The heat shield 107 is formed by stacking at least two layers of heat insulating boards 1071, for example, the heat shield 107 is formed by stacking 2 to 10 layers of heat insulating boards 1071, and the heat insulating boards 1071 are, for example, static pressure graphite, carbon-carbon composite, carbon fiber, graphite hard felt, or graphite soft felt. The distance between every two adjacent layers of the heat insulation boards 1071 is, for example, 1 mm to 15 mm, specifically, 1 mm, 5mm, 8 mm, 10 mm, 12 mm, 15 mm, or other suitable ranges for the present invention. The thermal insulation plates 1071 have a thickness of, for example, 0.2 mm to 2 mm, and each adjacent thermal insulation plate 1071 is connected to each other by, for example, a graphite column.
Referring to fig. 1 and 2, in some embodiments, the heat shield 107 has a cylindrical shape, and the diameter of the heat shield 107 is, for example, 10 mm to 300 mm. At this time, the heat insulating plate 1071 has a through hole 1072 having a diameter of, for example, 3 mm to 10 mm in one embodiment. The through holes 1072 on each two adjacent layers of the heat insulation boards 1071 are communicated with each other. The through holes 1072 are centrally distributed in the central area of the insulation board 1071, between any two adjacent insulation boards 1071, the diameter of the through hole on the insulation board located relatively above is greater than the diameter of the through hole on the insulation board located relatively below, i.e. from top to bottom, the diameter of the through hole is reduced in order, therefore, the whole shape formed by connecting all the through holes is, for example, a cone shape, which is for the purpose of enhancing the heat dissipation at the center of the holding crucible 104, and simultaneously reducing the heat dissipation at the edge of the holding crucible 104, obtaining a relatively downward convex temperature distribution.
Referring to fig. 1 and 2, in some embodiments, the heat insulation plate 1071 is, for example, a graphite plate, the heat shield 107 is composed of 10 layers of graphite plates, each layer of graphite plates has a thickness of 1 mm, each layer of graphite plates has a distance of 5mm, the diameter of each graphite plate is 155mm, 4 through holes 1072 are symmetrically distributed on each layer of graphite plates, the through holes 1072 on the heat shield 107 are sequentially reduced from top to bottom, and the positions of the through holes 1072 are close to the center of the heat shield 107, which functions to enhance the heat dissipation at the center of the material holding crucible 104 and reduce the heat dissipation at the edges to obtain a more downward convex temperature distribution. In this embodiment, a gas is introduced into the apparatus body 101 to maintain a pressure of 20 mbar, the induction coil 103 transmits electric energy to the heat transfer body 105, the heat transfer body 105 converts the electric energy into heat, the insulating layer 102 ensures that the inside of the loading crucible 104 is at a high temperature, and when the temperature of the top of the loading crucible 104 is raised to 2200 ℃ and the temperature of the bottom of the loading crucible 104 reaches 2250 ℃, crystals begin to grow. In the process, a uniform heat dissipation effect can be obtained by rotating the heat shield 107, the temperature gradient in the material holding crucible 104 can be increased by raising the position of the heat shield 107, and the temperature gradient can be reduced by lowering the position of the heat shield 107. Therefore, the heat shield 107 is lifted to a position 100 mm away from the top surface of the loading crucible 104 within 8 hours by the rotary lifting mechanism 108, the crystal is subjected to primary growth in an environment with a large temperature gradient, and then the rotation speed of the heat shield 107 is adjusted, and the heat shield 104 is slowly lowered to a position 20 mm away from the top surface of the loading crucible 104 within 20 hours and is also kept rotating during the lowering process. The relative position of the induction coil 103 remains unchanged during the crystal growth. After the crystal growth is finished, the heat shield 107 further descends to a position 2 mm away from the top surface of the material bearing crucible 104, the temperature reduction process is carried out, the crystal is cooled in the material bearing crucible 104, and at the moment, the crystal is in a small temperature gradient, so that the obtained crystal has small internal stress, good quality and no cracking.
Referring to fig. 3, in other embodiments, the heat shield 107 has an inverted truncated cone shape and the heat shield 1071 does not have the through hole 1072. From top to bottom, the diameter of the insulating plate 1071 gradually decreases, the diameter of the insulating plate 1071 at the topmost end is the largest, and the diameter of the insulating plate 1071 at the bottommost end is the smallest, and this structure has the effect of increasing the heat preservation effect at the center of the material holding crucible 104, reducing the heat dissipation at the center of the material holding crucible 104, and increasing the heat dissipation at the edge of the material holding crucible 104, so as to obtain a relatively flat temperature distribution.
Referring to fig. 3, in another embodiment, the heat insulation plate 1071 is, for example, a carbon fiber plate, the heat shield 107 is formed by 10 layers of carbon fiber plates, each layer of the carbon fiber plates has a thickness of 0.5mm, each adjacent layer of the carbon fiber plates has a spacing of 5mm, the diameter of the carbon fiber plate at the topmost layer is 155mm, the diameters of the rest of the carbon fiber plates are gradually reduced from top to bottom, and the diameter of the bottommost layer is 65 mm. In this embodiment, a gas is introduced into the apparatus body 101 to maintain a pressure of 20 mbar, the induction coil 103 transmits electric energy to the heat transfer body 105, the heat transfer body 105 converts the electric energy into heat, the insulating layer 102 ensures that the inside of the loading crucible 104 is at a high temperature, and when the temperature of the top of the loading crucible 104 is raised to 2200 ℃ and the temperature of the bottom of the loading crucible 104 reaches 2250 ℃, crystals begin to grow. During the process, raising the position of the heat shield 107 may increase the temperature gradient within the loading crucible 104, and lowering the position of the heat shield 107 may decrease the temperature gradient. Therefore, the heat shield 107 is raised 120 mm from the top surface of the loading crucible 104 within 12 hours by the rotary elevating mechanism 108, the crystal is subjected to primary growth in an environment with a large temperature gradient, and then the rotation speed of the heat shield 107 is adjusted to slowly drop the heat shield 104 to a position 50 mm from the top surface of the loading crucible 104 within 20 hours. The relative position of the induction coil 103 remains unchanged during the crystal growth. After the crystal growth is finished, the heat shield 107 further descends to a position 2 mm away from the top surface of the material bearing crucible 104, the temperature reduction process is carried out, the crystal is cooled in the material bearing crucible 104, and at the moment, the crystal is in a small temperature gradient, so that the obtained crystal has small internal stress, good quality and no cracking.
Referring to fig. 1 and 3, in the present invention, the rotary lifting mechanism 108 can drive the heat shield 107 to rotate and lift in the vertical direction along the opening 106, and only the lifting function can be performed. The internal stress of the resulting crystal is reduced by adjusting the temperature gradient within the holding crucible 104 through the lifting and lowering movement of the heat shield 107, the particular configuration of the heat shield 107, and the coincidence of the heat shield 107 with the opening.
To sum up, the utility model provides a carborundum single crystal growth equipment, wherein, at the crystal growth in-process, through adjusting the upper and lower position of heat shield has changed hold material crucible top with visible radiation area between the equipment body inner wall has changed hold the heat dissipation condition at material crucible top, adjusted hold the inside temperature gradient of material crucible. The utility model discloses can also be through rotatory the heat shield makes the alternating opening and shutting of through-hole on the heat shield, adjusted hold material crucible top with the heat transfer time of equipment body inner wall has changed hold the heat dissipation condition at material crucible top, adjusted hold the inside temperature gradient of material crucible. The utility model discloses an above two kinds of modes have changed hold the effective thermal resistance at material crucible top, realized hold the regulation of the inside temperature gradient of material crucible, optimized the shape and the growth temperature at crystal crystallization interface, reduced crystal internal stress, reduced the technology degree of difficulty, promoted the quality of crystal.
The above description is only a preferred embodiment of the present application and the explanation of the applied technical principle, and it should be understood by those skilled in the art that the scope of the present application is not limited to the technical solution of the specific combination of the above technical features, and also covers other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept, for example, the technical solutions formed by mutually replacing the above technical features (but not limited to) having similar functions disclosed in the present application.
Besides the technical features described in the specification, other technical features are known to those skilled in the art, and further description of the other technical features is omitted here in order to highlight the innovative features of the present invention.
Claims (10)
1. An apparatus for growing a silicon carbide single crystal, comprising:
an apparatus body;
the heat insulation layer is arranged inside the equipment body;
the induction coil is arranged around the equipment body or the heat insulation layer;
the material bearing crucible is arranged inside the heat insulation layer and used for placing a silicon carbide raw material;
the heat transfer body is positioned in the heat insulation layer and arranged around the material bearing crucible;
the top of the heat-insulating layer is provided with an opening, the bottom of the opening is the top end of the material-bearing crucible, and the opening is used for accommodating a heat-insulating structure;
the heat insulation structure comprises a rotary lifting mechanism and a heat insulation screen, wherein the heat insulation screen is formed by stacking at least two layers of heat insulation boards, and the distance between every two adjacent layers of heat insulation boards is 1-15 mm;
wherein, in the vertical direction of opening place, the heat-insulating structure makes rotation and elevating movement.
2. The silicon carbide single crystal growth apparatus according to claim 1, wherein the heat insulating structure is rotated and moved up and down in a range of 0.5mm to 500 mm.
3. The silicon carbide single crystal growth apparatus according to claim 1, wherein the heat insulating plates have a thickness of 0.2 mm to 2 mm, and each adjacent heat insulating plate is connected by a graphite column.
4. The silicon carbide single crystal growth apparatus according to claim 1, wherein the heat shield has a cylindrical shape and the heat shield has a through hole.
5. The silicon carbide single crystal growth apparatus according to claim 4, wherein the through holes are distributed in a central region of the heat shield.
6. The silicon carbide single crystal growth apparatus according to claim 5, wherein the through holes of each adjacent two of the heat insulating plates communicate with each other.
7. The silicon carbide single crystal growth apparatus according to claim 6, wherein between any two adjacent layers of the heat insulating plates, the diameter of the through-hole on the heat insulating plate located relatively above is larger than the diameter of the through-hole on the heat insulating plate located relatively below.
8. The silicon carbide single crystal growth apparatus according to claim 4, wherein the diameter of the through-hole is 3 mm to 10 mm.
9. The silicon carbide single crystal growth apparatus according to claim 4, wherein the heat shield has a diameter of 10 mm to 300 mm.
10. The silicon carbide single crystal growth apparatus according to claim 1, wherein the heat shield has an inverted truncated cone shape and the heat shield does not have the through hole 209712.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021350067.5U CN212713846U (en) | 2020-07-10 | 2020-07-10 | Silicon carbide single crystal growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021350067.5U CN212713846U (en) | 2020-07-10 | 2020-07-10 | Silicon carbide single crystal growth equipment |
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| Publication Number | Publication Date |
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| CN212713846U true CN212713846U (en) | 2021-03-16 |
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| CN202021350067.5U Active CN212713846U (en) | 2020-07-10 | 2020-07-10 | Silicon carbide single crystal growth equipment |
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| CN (1) | CN212713846U (en) |
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- 2020-07-10 CN CN202021350067.5U patent/CN212713846U/en active Active
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