CN214032757U - Device for annealing silicon carbide wafer - Google Patents
Device for annealing silicon carbide wafer Download PDFInfo
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- CN214032757U CN214032757U CN202022301952.0U CN202022301952U CN214032757U CN 214032757 U CN214032757 U CN 214032757U CN 202022301952 U CN202022301952 U CN 202022301952U CN 214032757 U CN214032757 U CN 214032757U
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Abstract
The application provides a device for annealing of carborundum wafer is used for placing the intermediate layer board of carborundum wafer through being equipped with one deck or multilayer in the crucible body to set up each intermediate layer board and arrange along the axial direction of the crucible body, have certain interval between the adjacent intermediate layer board. Therefore, when the silicon carbide wafers are annealed, a plurality of silicon carbide wafers are respectively stacked on each interlayer plate, and compared with the method of directly stacking all the silicon carbide wafers together, the silicon carbide wafers can be effectively prevented from being pressed too tightly, and the silicon carbide wafers are difficult to separate after being oxidized. Simultaneously, set up the through-hole on each sandwich panel, can guarantee the circulation of air, and then can guarantee the circulation of air between each wafer, help reducing the wafer and glue even. Therefore, the embodiment of the application can solve the problem that the wafers are not well separated after the silicon carbide wafer is annealed, can effectively reduce the rate of cracking and breaking, can place more wafers in the crucible, improves the annealing efficiency and reduces the production cost.
Description
Technical Field
The application relates to the technical field of crystal material processing, in particular to a device for annealing a silicon carbide wafer.
Background
Silicon carbide (SiC) is a typical representative of third-generation semiconductor materials, and has excellent overall properties such as high thermal conductivity, wide forbidden bandwidth, high chemical stability, and strong radiation resistance, compared to first-generation Si and second-generation GaAs semiconductor materials. This makes SiC semiconductor materials used for the preparation of high power electronic devices and microwave devices and have been widely used in the fields of high voltage power transmission, 5G communication, electric vehicles, etc., and SiC semiconductor materials and devices are now the industry of controversy in various countries.
The physical vapor transport method is the mainstream method for growing SiC single crystals at present. Among them, in the process of growing SiC single crystals, it is generally necessary that the crystal growth interface be slightly convex in order to enlarge the size of the single crystal, improve the quality of the single crystal, reduce crystal defects, and the like. Due to the slightly convex growth interface, the growth speed of the central area of the crystal is higher than that of the edge area, namely the axial temperature gradient of the central area is greater than that of the edge area, and as a result, the growth speed and the growth time of the crystal on the same plane parallel to the seed crystal are different, and further, the stress is generated in the crystal. In addition, the crystal is subsequently subjected to cutting, grinding, etc., which in turn introduces surface stresses. Therefore, during crystal processing, it is necessary to anneal a silicon carbide wafer (referred to simply as a wafer) to reduce wafer stress.
Currently, silicon carbide wafers are typically annealed using an annealing furnace. Specifically, firstly, silicon carbide wafers are stacked together and placed in a crucible; the crucible is then placed vertically in an annealing furnace for annealing of the wafer, i.e., with the silicon carbide wafer parallel or approximately parallel to the horizontal plane. However, when the size of the wafer is increased to 6 to 8 inches, the weight of the wafer is increased and the contact area between the wafers is large due to the increase of the size of the wafer, so that when a large number of wafers are stacked together, the wafers are not well separated due to the oxidation of the wafers after the completion of annealing, and further, the phenomena of cracking and breaking are caused, thereby reducing the yield of finished products.
SUMMERY OF THE UTILITY MODEL
In view of the above problems, embodiments of the present application provide an apparatus for annealing a silicon carbide wafer.
The device for annealing silicon carbide wafers, provided by the embodiment of the application, comprises a crucible body and a crucible cover movably connected with the crucible body, wherein:
one or more layers of sandwich plates for placing the silicon carbide wafer are arranged in the crucible body, each sandwich plate is arranged along the axial direction of the crucible body, and a certain distance is reserved between every two adjacent sandwich plates.
The sandwich plate is provided with a through hole.
Optionally, a boss for supporting the sandwich plate is arranged on the inner wall of the crucible body, and the sandwich plate is movably placed on the boss;
the outer diameter of the sandwich plate is smaller than the inner diameter of the crucible body.
Optionally, each of said bosses is comprised of a plurality of separate sub-bosses.
Optionally, the outer diameter of each sandwich plate is sequentially increased along the direction from the bottom to the top of the crucible body;
the inner wall of the crucible body is provided with positioning parts protruding out of the inner wall, the positioning parts are respectively positioned at a gap formed by the interlayer plate and the inner wall of the crucible body, and the distance between the positioning parts and the interlayer plate is smaller than a preset value.
Optionally, the crucible body is divided into at least two sub-crucible bodies along the direction from the bottom to the top of the crucible body, and the adjacent sub-crucible bodies are movably connected;
each sub-crucible body is internally provided with a layer of sandwich plate, and the sandwich plate is fixedly connected with the inner wall of the sub-crucible body.
Optionally, the inner diameter of the crucible body is 1.2 to 1.5 times of the diameter of the silicon carbide wafer.
Optionally, the outer diameter of the sandwich plate is 2-20 mm smaller than the inner diameter of the crucible body.
Optionally, the sandwich panel is an alumina sandwich panel or a zirconia sandwich panel; the crucible body is an alumina crucible body or a zirconia crucible body.
Optionally, the thickness of the interlayer plate is 5-10 mm.
Optionally, the distance between adjacent sandwich plates is 15-20 mm.
The device for annealing of silicon carbide wafer that this application embodiment provided is used for placing silicon carbide wafer's sandwich panel through being equipped with one deck or multilayer in the crucible body to set up each sandwich panel and arrange along the axial direction of the crucible body, have certain interval between the adjacent sandwich panel. Therefore, when the silicon carbide wafers are annealed, a plurality of silicon carbide wafers are respectively stacked on each interlayer plate, and compared with the method of directly stacking all the silicon carbide wafers together, the silicon carbide wafers can be effectively prevented from being too tightly pressed due to the increase of the weight of the silicon carbide wafers, so that the silicon carbide wafers are difficult to separate after being oxidized. Simultaneously, set up the through-hole on each sandwich panel, can guarantee the circulation of air, and then can guarantee the circulation of air between each wafer, help reducing the wafer and glue even. Therefore, the crucible provided by the embodiment of the application can solve the problem of poor separation of wafers caused by the annealing oxidation effect of the silicon carbide wafer, can effectively reduce the rate of cracking and breaking, can place more wafers in the crucible, is favorable for improving the annealing efficiency and reducing the production finished products, and is particularly suitable for annealing large-size silicon carbide wafers.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive labor.
FIG. 1 is a schematic diagram showing the basic structure of a first apparatus for annealing a silicon carbide wafer according to an embodiment of the present application;
FIG. 2 is a schematic structural view of the sandwich panel of FIG. 1;
FIG. 3 is a schematic diagram showing the basic structure of a second apparatus for annealing a silicon carbide wafer according to an embodiment of the present application;
FIG. 4 is a schematic cross-sectional view of the crucible body of FIG. 3;
FIG. 5 is a schematic cross-sectional view of the sandwich plate after it has been loaded into a crucible body;
FIG. 6 is a schematic view of a disassembled structure of a third apparatus for annealing silicon carbide wafers according to the embodiment of the present application;
FIG. 7 is a schematic diagram of an assembly structure of a third device for annealing silicon carbide wafers according to the embodiment of the present application;
FIG. 8 is a schematic view of a silicon carbide wafer loaded into the crucible body of FIG. 7.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.
Aiming at the problem that the existing crucible is difficult to separate after annealing when the large-size silicon carbide wafer is annealed, the embodiment of the application provides a layered crucible which is particularly suitable for annealing the large-size silicon carbide wafer.
FIG. 1 is a schematic diagram of the basic structure of a first device for annealing a silicon carbide wafer according to an embodiment of the present application. As shown in fig. 1, the wafer annealing apparatus provided in this embodiment mainly includes a crucible body 10 and a sandwich plate 20.
The crucible body 10 may be made of a material that is resistant to high temperature and oxidation, such as alumina or zirconia. Structurally, the crucible body 10 can be divided into two parts, a crucible cover 11 and a crucible body 12. The crucible cover 11 and the crucible body 12 are detachably connected, wherein the specific connection manner between the crucible cover and the crucible body can be threaded connection, screw connection, etc., and the embodiment is not particularly limited. The crucible body 12 is formed of a bottom wall and a sidewall extending from the bottom wall, and may be cylindrical in shape, although other shapes are possible. Considering the heat conduction requirement and facilitating the taking and placing of the silicon carbide wafer, the inner diameter of the crucible body 12 is 1.2-1.5 times of the diameter of the silicon carbide wafer, but the numerical range is not limited.
Further, the inside of the crucible body 12 is designed to be a layered structure separated by one or more than one interlayer plate 20, in this embodiment, 4 layers of interlayer plates 20 are adopted, wherein the interlayer height is designed to be 15-20 mm according to the process requirement, but not limited to this value range. In order to support the sandwich plate 20, be provided with boss 30 on the inner wall of the crucible body 12, according to the high demand in the layer of design, set up the interval between each layer boss 30, and simultaneously, the internal diameter of boss 30 is less than the external diameter of sandwich plate 20, and, the external diameter of sandwich plate 20 is less than the internal diameter of the crucible body 12, for example, the external diameter that sets up sandwich plate 20 is 2 ~ 20mm less than the internal diameter of the crucible body 12, take out from the crucible body 12 freely in order to realize that the sandwich plate 20, and put into in the crucible body 12.
Fig. 2 is a schematic view of the sandwich panel of fig. 1. As shown in fig. 2, the sandwich plate 20 of the present embodiment may be made of a material that is resistant to high temperature and oxidation, such as alumina or zirconia. The thickness of the material is set to be 5-10 mm in consideration of the surface flatness and the load bearing requirement, but the material is not limited to the value range. In order to ensure the air circulation between the layers, as shown in fig. 2, the sandwich plate 20 of the present embodiment is provided with a plurality of circular through holes 21. The through-hole 21 is not limited to a circular hole shape, and may have any shape such as a long shape, a triangular shape, or an irregular shape.
By utilizing the crucible, when the silicon carbide wafers are annealed, a plurality of silicon carbide wafers are respectively stacked on each interlayer plate 20, and compared with the method of directly stacking all the silicon carbide wafers together, the silicon carbide wafers can be effectively prevented from being increased in weight, so that the wafers are extruded tightly, and the problem that the wafers are difficult to separate after oxidation is caused. Meanwhile, the through holes 21 are formed in the sandwich plates 20, so that air circulation can be guaranteed, air circulation among the wafers can be further guaranteed, and the wafers are favorably prevented from being adhered. Therefore, the crucible provided by the embodiment of the application can solve the problem that wafers are not well separated due to the annealing oxidation effect of the silicon carbide wafer, can effectively reduce the rate of cracking and breaking, can place more wafers in the crucible, improves the annealing efficiency and reduces the production of finished products. The wafer annealing device provided by the embodiment of the application is particularly suitable for annealing large-size silicon carbide wafers.
Fig. 3 is a schematic diagram of the basic structure of a second device for annealing silicon carbide wafers, which is provided by the embodiment of the application. As shown in fig. 3, the apparatus in the present embodiment is different from the above embodiments mainly in that: the inner diameter d of the boss 30 increases in the order of d in the direction from the bottom to the top of the crucible (the direction in which the crucible body approaches the crucible cover is referred to as the top in this embodiment), i.e., d1＜d2＜d3＜d4And, correspondingly, the inner diameter of each sandwich plate 20 is increased in turn, and preferably, the outer diameter of each sandwich plate 20 is smaller than the inner diameter of the boss 30 at the top thereof. Thus, the sandwich plates 20 can be more conveniently placed within the crucible body 12 when loading the silicon carbide wafer.
Fig. 4 is a sectional structure view of the crucible body of fig. 3, and fig. 5 is a sectional structure view of the sandwich plate after being loaded into the crucible body. As shown in fig. 4 and 5, in the present embodiment, the boss 30 is also designed to be composed of a plurality of independent sub-bosses. Thus, after the sandwich plate 20 is arranged on the boss 30, a certain gap 50 is formed between the sandwich plate 20 and the crucible body 12, and further air circulation is facilitated.
Further, in order to ensure that the size of the gap 50 between the interlayer plate 20 and the crucible body 12 is more uniform, in this embodiment, positioning members 40 protruding from the inner wall of the crucible body 12 are further disposed on the inner wall of the crucible body 12, each positioning member 40 is respectively located at a gap formed by the interlayer plate 20 and the inner wall of the crucible body 12, and the distance between the positioning member 40 and the interlayer plate 20 is smaller than a predetermined value, for example, smaller than 0.2mm or 0.3 mm. Utilize locating component 40 to sandwich panel 20 spacing, and then can realize that the axis of sandwich panel 20 and the axis of the crucible body 12 are approximate to coincide, and then can guarantee the homogeneity of the clearance 50 of sandwich panel 20 periphery.
Fig. 6 is a schematic view of a disassembled structure of a third apparatus for annealing silicon carbide wafers provided by the embodiments of the present application, and fig. 7 is a schematic view of an assembled structure of the third apparatus for annealing silicon carbide wafers provided by the embodiments of the present application. As shown in fig. 6 and 7, the main difference between the present embodiment and the above-described embodiment is that: along the axial direction of the crucible body 12, the crucible body 12 is divided into at least two sub-crucible bodies, and the embodiment divides the crucible body into four layers, namely a first sub-crucible body 121, a second sub-crucible body 122, a third sub-crucible body 123 and a fourth sub-crucible body 124. The adjacent sub-crucible bodies are movably connected, and the connection modes such as threaded connection, clamping connection and the like can be adopted.
Meanwhile, each layer of the sub-crucible body is internally provided with a layer of sandwich plate 20, and the sandwich plate 20 is fixedly connected with the inner wall of the sub-crucible body in the embodiment. FIG. 8 is a schematic view of a silicon carbide wafer loaded into the crucible body of FIG. 7. As shown in fig. 8, when annealing a silicon carbide wafer, a silicon carbide wafer 60 is placed in each layer of the sub-crucible body, in this embodiment, 12 wafers are stacked in each layer, and then the sub-crucible bodies are sequentially arranged together and placed in an annealing furnace. Compared with the above embodiments, the embodiment is more convenient and fast without disassembling and assembling the sandwich plate 20 when the silicon carbide wafer is annealed.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
It will be understood that the present application is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the application is limited only by the appended claims.
Claims (10)
1. The device for annealing the silicon carbide wafer is characterized by comprising a crucible body and a crucible cover movably connected with the crucible body, wherein:
one or more layers of interlayer plates for placing silicon carbide wafers are arranged in the crucible body, each interlayer plate is arranged along the axial direction of the crucible body, and a space is reserved between every two adjacent interlayer plates;
the sandwich plate is provided with a through hole.
2. The device for annealing the silicon carbide wafer as claimed in claim 1, wherein a boss for supporting the interlayer plate is provided on the inner wall of the crucible body, and the interlayer plate is movably placed on the boss;
the outer diameter of the sandwich plate is smaller than the inner diameter of the crucible body.
3. The apparatus of claim 2 wherein each of said mesas is comprised of a plurality of individual sub-mesas.
4. The apparatus for annealing a silicon carbide wafer according to claim 3, wherein the outer diameter of each of the sandwich plates is sequentially increased in a direction from the bottom to the top of the crucible body;
the inner wall of the crucible body is provided with positioning parts protruding out of the inner wall, the positioning parts are respectively positioned at a gap formed by the interlayer plate and the inner wall of the crucible body, and the distance between the positioning parts and the interlayer plate is smaller than a preset value.
5. The apparatus according to claim 1, wherein the crucible body is divided into at least two sub-crucible bodies along the axial direction of the crucible body, and the adjacent sub-crucible bodies are movably connected;
each sub-crucible body is internally provided with a layer of sandwich plate, and the sandwich plate is fixedly connected with the inner wall of the sub-crucible body.
6. The apparatus according to claim 1, wherein the inner diameter of the crucible body is 1.2 to 1.5 times the diameter of the silicon carbide wafer.
7. The apparatus for annealing a silicon carbide wafer according to claim 2, wherein the outer diameter of the interlayer plate is 2 to 20mm smaller than the inner diameter of the crucible body.
8. The apparatus for annealing silicon carbide wafers as set forth in claim 1, wherein the sandwich plate is an alumina sandwich plate or a zirconia sandwich plate;
the crucible body is an alumina crucible body or a zirconia crucible body.
9. The device for annealing the silicon carbide wafer as claimed in claim 8, wherein the thickness of the interlayer plate is 5 to 10 mm.
10. The device for annealing silicon carbide wafers as claimed in claim 1, wherein the distance between adjacent sandwich plates is 15 to 20 mm.
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| CN202022301952.0U CN214032757U (en) | 2020-10-15 | 2020-10-15 | Device for annealing silicon carbide wafer |
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| CN202022301952.0U CN214032757U (en) | 2020-10-15 | 2020-10-15 | Device for annealing silicon carbide wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114369875A (en) * | 2020-10-15 | 2022-04-19 | 广州南砂晶圆半导体技术有限公司 | Device for annealing silicon carbide wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114369875A (en) * | 2020-10-15 | 2022-04-19 | 广州南砂晶圆半导体技术有限公司 | Device for annealing silicon carbide wafer |
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