CN212682785U

CN212682785U - Laser processing system

Info

Publication number: CN212682785U
Application number: CN202021234842.0U
Authority: CN
Inventors: 凌步军; 朱鹏程; 袁明峰; 赵有伟; 孙月飞; 冯高俊; 滕宇; 吕金鹏; 冷志斌
Original assignee: Jiangsu Yawei Aosi Laser Technology Co ltd
Current assignee: Jiangsu Yawei Aosi Laser Technology Co ltd
Priority date: 2020-06-29
Filing date: 2020-06-29
Publication date: 2021-03-12
Anticipated expiration: 2030-06-29

Abstract

The utility model provides a laser processing system, which comprises a substrate bearing platform; the laser generating assembly is arranged on one side of the table top of the substrate bearing table and comprises a laser oscillator, a pair of vibrating mirror assemblies and a light condensing element; the bearing table moving assembly is connected with the substrate bearing table; the laser sensing element is installed and fixed on the outer side of the substrate bearing table, and a light beam sensing surface of the laser sensing element and the table top of the substrate bearing table are positioned on the same horizontal plane; the control part is connected with the laser generating assembly, the bearing platform moving assembly and the laser sensing element; the control part drives the substrate bearing table to move by utilizing the bearing table moving component so as to drive the laser sensing component to move in the maximum irradiation area of the laser generating component, and corrects the control parameter of the galvanometer component of the laser generating component according to the detection result of the laser sensing component, so that the irradiation position precision of the laser beam of the laser processing system is improved.

Description

Laser processing system

Technical Field

The utility model relates to a laser beam machining technical field especially relates to a laser beam machining system.

Background

In semiconductor manufacturing processes or display manufacturing processes, a laser processing system is generally used to perform micro-engraving of internal circuits and the like, and with the miniaturization of semiconductor products and display products, the internal circuits have been more precise, and the demand for positional accuracy of an irradiated laser beam has been increasing. In general, a laser processing system is generally configured with a laser head mounted on a pair of linear driving units perpendicularly orthogonal to each other so as to control irradiation of a laser beam onto a specified substrate to be processed or onto a processing position of the processed substrate; or a laser beam generated by the laser head is irradiated on a specified substrate to be processed by using a pair of galvanometers consisting of a motor and a reflecting mirror, or is irradiated on a required position of the processed substrate.

Taking the adjustment of the laser beam irradiation position by using the galvanometers as an example, when the laser beam irradiation position is adjusted by using the galvanometers, because the two galvanometers are different in installation position, the path of the laser beam formed by one of the galvanometers is longer than the path of the laser beam formed by the other galvanometer, and therefore when the galvanometers are controlled to irradiate the laser beam in a preset pattern, deformation is generated relative to the preset processing pattern; in addition, the laser beam passing through the vibrating mirror can also generate bending deformation when passing through the condensing lens, and can also generate deformation relative to a preset processing pattern; again, in the galvanometer, the center of mass of the light deflecting element is not perfectly aligned with the rotation axis, so that when the light deflecting element is rotated about the rotation axis, harmful vibration in a direction perpendicular to the rotation axis is generated, which causes a reduction in the laser light irradiation position accuracy.

During the processing using the laser processing system, the distortion of the laser beam irradiation position may reduce the accuracy of the laser beam irradiation position, resulting in defects in the final formed semiconductor product or display product.

SUMMERY OF THE UTILITY MODEL

In view of the above-mentioned shortcomings of the prior art, the present invention is directed to a laser processing system for solving the technical problem that the deformation of the laser beam irradiation position of the laser processing system in the prior art can reduce the precision of the laser beam irradiation position, resulting in the defect of the finally formed semiconductor product or display product.

To achieve the above and other related objects, the present invention provides a laser processing system, which comprises:

the substrate bearing table is used for bearing and fixing a substrate to be processed, and the substrate bearing table exposes part of the surface, close to the table top of the substrate bearing table, of the substrate to be processed to serve as a processing area;

the laser generating assembly is arranged on one side of the table top of the substrate bearing table and comprises a laser oscillator, a pair of vibrating mirror assemblies and a light condensing element;

the bearing table moving assembly is connected with the substrate bearing table;

the laser sensing element is fixedly arranged on the outer side of the substrate bearing table, and a light beam sensing surface of the laser sensing element and the table top of the substrate bearing table are positioned on the same horizontal plane; and the number of the first and second groups,

the control part is connected with the laser generating assembly, the bearing platform moving assembly and the laser sensing element;

wherein the galvanometer assembly includes a light deflecting element, a deflection driving element, and a support fixing element, wherein a distal end of the light deflecting element is connected with the support fixing element, a proximal end of the light deflecting element is connected with an output shaft of the deflection driving element, and the support fixing element maintains alignment of a rotation axis of the light deflecting element with a rotation axis of the deflection driving element;

the control part drives the substrate bearing table to move by utilizing the bearing table moving component so as to drive the laser sensing component to move in the maximum irradiation area of the laser generating component, and the control part corrects the control parameter of the galvanometer component of the laser generating component according to the detection result of the laser sensing component so as to improve the accuracy of the irradiation position of the laser beam.

In an alternative embodiment, the stage moving assembly includes a first stage moving assembly for driving the substrate stage to move along a first direction, and a second stage moving assembly for driving the substrate stage to move along a second direction, wherein the first direction is perpendicular to the second direction.

In an alternative embodiment, the axis of rotation of the light deflecting element of one of said galvanometer assemblies is perpendicular to the axis of rotation of the light deflecting element of the other of said galvanometer assemblies.

In an alternative embodiment, the size of the processing area of the substrate to be processed is smaller than the maximum irradiation area of the laser generating assembly.

In an alternative embodiment, the light-focusing element comprises a focusing lens.

In an alternative embodiment, the light deflecting element comprises a mirror.

In an alternative embodiment, the yaw drive element comprises a swing motor.

In an alternative embodiment, the laser sensing element comprises an image capture device having an image sensor.

In an alternative embodiment, the carrier moving assembly includes a linear motor structure or a combination of a rotary motor and a ball screw.

In an alternative embodiment, the control parameter of the galvanometer assembly comprises a drive voltage or a drive current of a deflection drive element of the galvanometer assembly.

According to the utility model discloses a laser processing system can improve the precision of laser beam irradiation position, improves the base plate machining precision;

according to the laser processing system of the utility model, the application efficiency of the device can be improved according to the situation;

according to the laser processing system of the utility model, the correction precision of the whole processing area of the processing substrate, especially the edge part of the processing substrate can be improved;

according to the utility model discloses a laser beam machining system, through in the galvanometer subassembly introduce support fixed component, support fixed component and keep the rotation axis of light deflection component with the alignment of the rotation axis of deflection drive component passes through to avoid light deflection component to produce the harmful vibration along the direction of this rotation axis of perpendicular to when rotating around its rotation axis, effectively improve the random error of laser beam machining system's laser irradiation position, the laser beam position correction of completion laser beam machining system that can be faster improves correction efficiency.

Drawings

Fig. 1 is a schematic structural diagram of a laser processing system according to the present invention.

Fig. 2 is a schematic flow chart of the laser processing method according to the present invention.

Fig. 3 is a sub-flowchart of step S20 of the laser processing method according to the present invention.

Fig. 4 is a schematic diagram of a laser processing system according to the present invention when performing irradiation position correction.

Fig. 5 shows the processing area of the substrate to be processed, the distribution area of the plurality of array points, and the maximum irradiation area relative size chart of the laser generation assembly of the laser processing system of the present invention.

Detailed Description

The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The present invention can also be implemented or applied through other different specific embodiments, and various details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.

In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the invention in a schematic manner, and only the components related to the invention are shown in the drawings rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, quantity and proportion of the components in actual implementation may be changed at will, and the layout of the components may be more complicated.

The laser beam of laser processing system shines the distortion of position and can reduce the precision that the laser beam shines the position to lead to finally forming semiconductor product or display product to have the problem of defect, the embodiment of the utility model provides a laser processing system. Fig. 1 shows a schematic structural diagram of a laser processing system of the present invention. Referring to fig. 1, the laser processing system of the present invention mainly includes a substrate carrier 200, a laser generating assembly 100, a carrier moving assembly (the shape of a bidirectional arrow 700 in fig. 1 shows the left and right movement of the carrier moving assembly), a laser sensing element 300, and a control unit 400.

Referring to fig. 1, in the present embodiment, the substrate supporting stage 200 is used for supporting and fixing a substrate 500 to be processed, a hollow opening structure (not shown) is formed on the substrate supporting stage 200, when the substrate 500 to be processed is supported and placed on the substrate supporting stage 200, the substrate 500 to be processed covers the opening structure, that is, the opening structure is equivalent to a portion of a surface of the substrate 500 to be processed, which is close to a table top of the substrate supporting stage 200, exposed, and the exposed portion of the surface is a processing area 500a of the substrate 500 to be processed, and the processing area 500a is defined by a shape of the opening structure on the substrate supporting stage 200.

Referring to fig. 1, the carrier moving assembly is connected to the substrate carrier 200, and the carrier moving assembly can drive the carrier to translate on an x-y plane, for this purpose, the carrier moving assembly includes a first carrier moving assembly driving the substrate carrier 200 to move along an x direction (a first direction) and a second carrier moving assembly driving the substrate carrier 200 to move along a y direction (a second direction), and the first direction is perpendicular to the second direction. The first/second stage moving assembly may be a linear motor structure or a combination of a rotary motor and a ball screw, for example. Before the substrate 500 to be processed is processed by the laser process, the stage moving assembly may move the substrate stage 200 to move the laser sensing element 300 (described below) within the maximum irradiation area ROE of the laser generating assembly 100 (for example, to an array point located in the maximum irradiation area ROE described below), so as to correct the irradiation position of the laser beam LB of the laser processing system, and the correction method is described in the relevant portion below.

Referring to fig. 1, in the present embodiment, the laser generating assembly 100 is disposed on a table side of the substrate supporting table 200, the laser generating assembly 100 includes a laser oscillator 110 for emitting a laser beam LB, a pair of

galvanometer assemblies

120 and 130 for reflecting and deflecting the laser beam LB emitted from the laser oscillator 110, the pair of

galvanometer assemblies

120 and 130 can enable the laser beam LB to move within a maximum irradiation area ROE (a dashed-line frame surrounding a periphery of a laser sensing element 300 in fig. 1) of the laser generating assembly 100, and a condensing element 140 for condensing the laser beam LB reflected and deflected by the pair of

galvanometer assemblies

120 and 130 and irradiating the condensed laser beam LB on the substrate 500 to be processed, and the condensing element 140 may be a condensing lens, for example.

Referring to fig. 1, in the present embodiment, in the pair of

galvanometer assemblies

120 and 130, the rotation axis of the light deflecting element 123 of one galvanometer assembly 120 is perpendicular to the rotation axis of the light deflecting element 133 of the other galvanometer assembly 130, the galvanometer assembly 120 may, for example, move the laser beam LB along the x-axis direction, and the galvanometer assembly 130 may move the laser beam LB along the y-axis direction.

Referring to fig. 1, taking the galvanometer assembly 120 as an example, the galvanometer assembly 120 includes a light deflecting element 123, a deflection driving element 121, and a supporting and fixing element 124, wherein a distal end of the light deflecting element 123 is connected to the supporting and fixing element 124, and a proximal end of the light deflecting element 123 is connected to an output shaft 122 of the deflection driving element 121; the supporting and fixing element 124 is fixed with the position of the rotation axis of the deflection driving element 121, and the supporting and fixing element 124 keeps the alignment of the rotation axis of the light deflection element 123 and the rotation axis of the deflection driving element 121, so that the supporting and fixing element 124 can limit harmful vibration generated in the direction perpendicular to the rotation axis when the light deflection element 123 rotates around the rotation axis, random errors of the laser irradiation position of the laser processing system can be effectively improved, the laser irradiation position correction of the laser processing system can be completed more quickly, and the correction efficiency is improved. The light deflecting element 123 may be, for example, a mirror, a wave plate or a lens, such as a mirror. The deflection driving element 121 may be, for example, a swing motor, which can deflect within a certain range under the driving of a driving voltage or a driving current, so as to drive the deflection of the light deflecting element 123 connected thereto, and adjust the movement of the laser beam LB along the x-axis direction.

Similarly, referring to fig. 1, the galvanometer assembly 130 includes a light deflecting element 133, a deflection driving element 131, and a supporting and fixing element 134, wherein a distal end of the light deflecting element 133 is connected to the supporting and fixing element 134, and a proximal end of the light deflecting element 133 is connected to the output shaft 132 of the deflection driving element 131; the position of the support fixing element 134 and the rotation axis of the deflection driving element 131 is fixed, and the support fixing element 134 keeps the alignment of the rotation axis of the light deflection element 133 and the rotation axis of the deflection driving element 131, so that the support fixing element 134 can limit harmful vibration generated in a direction perpendicular to the rotation axis when the light deflection element 133 rotates around the rotation axis, random errors of the laser irradiation position of the laser processing system can be effectively improved, the laser irradiation position correction of the laser processing system can be completed more quickly, and the correction efficiency is improved. The light deflecting element 133 may be, for example, a mirror, a wave plate or a lens, such as a mirror. The deflection driving element 131 may be, for example, a swing motor, which can deflect within a certain range under the driving of a driving voltage or a driving current, so as to drive the deflection of the light deflecting element 133 connected thereto, and adjust the movement of the laser beam LB along the y-axis direction.

In order to correct the irradiation position of the laser beam LB of the laser processing system, the laser processing system is further provided with the laser sensing element 300, the laser sensing element 300 may be, for example, an image capturing device with an image sensor, and the laser sensing element 300 is mounted and fixed on the outer side of the substrate supporting stage 200, so that when the irradiation position of the laser beam LB is corrected, the correction accuracy of the whole processing area 500a of the processed substrate, especially the edge portion of the processed substrate, can be improved, which will be described in detail later and will not be described herein. In addition, the beam sensing surface 300a of the laser sensing element 300 is located at the same level as the top surface of the substrate stage 200, so that it is not necessary to adjust the height of the laser sensing element 300 when the irradiation position of the laser beam LB is corrected.

Referring to fig. 1, the laser processing system further includes a control portion 400, wherein the control portion 400 is connected to the laser generating assembly 100, the carrier moving assembly and the laser sensing element 300; the control part 400 drives the substrate carrier 200 to move by using the carrier moving assembly, so as to drive the laser sensing element 300 to move in the maximum irradiation area ROE of the laser generating assembly 100, and the control part 400 corrects the control parameter of the mirror vibrating assembly of the laser generating assembly 100 according to the detection result of the laser sensing element 300, so as to improve the precision of the irradiation position of the laser beam LB, which is described in the related parts below.

Referring to fig. 2, an embodiment of the present invention further provides a method for laser processing a substrate 500 to be processed by using the laser processing system, where the method for laser processing includes: step S10, providing a laser processing system, wherein the laser processing system comprises a substrate carrier 200, a laser generating assembly 100, a carrier moving assembly, a laser sensing element 300 and a control part 400; step S20, the control part 400 drives the substrate stage 200 to move by using the stage moving assembly to drive the laser sensing element 300 to move in the maximum irradiation area ROE of the laser generating assembly 100, and the control part 400 corrects the control parameter of the mirror assembly of the laser generating assembly 100 according to the detection result of the laser sensing element 300 to improve the accuracy of the irradiation position of the laser beam LB; step S30, the control part 400 drives the substrate stage 200 to move by using the stage moving assembly, so as to move the processing area 500a of the substrate to be processed placed on the substrate stage 200 into the maximum irradiation area ROE of the laser generating assembly 100; in step S40, the controller 400 controls the galvanometer units 120 and/or 130 of the laser generator unit 100 to change the irradiation position of the laser beam LB using the corrected control parameter, so as to process the processing region 500a of the substrate 500 to be processed. With this laser processing method, the accuracy of the irradiation position of the laser beam LB can be improved, thereby improving the processing accuracy of the substrate 500 to be processed.

Referring to fig. 1 and 2, in step S10, the laser processing system has already been described in detail above, and is not described herein again.

Referring to fig. 1-3, in particular, step S20 includes: step S21, the control unit 400 generates a plurality of array points in the maximum irradiation area ROE of the laser generating assembly 100 based on the rectangular coordinate system of the stage moving assembly; step S22, the control unit 400 generates a plurality of control parameters of the galvanometer unit 120 and/or 130 of the laser generator unit 100, each of the control parameters being used to irradiate the laser beam LB to one of the plurality of array points; step S23, the control part 400 drives the substrate carrier 200 and the laser sensing element 300 to move together by using the carrier moving assembly, so as to move the laser sensing element 300 to one of the array points, which is defined as a selected array point; step S24, the control unit 400 controls the galvanometer units 120 and/or 130 of the laser generator unit 100 according to the control parameter corresponding to the selected array point to irradiate the selected array point with the laser beam LB; step S25, the control part 400 corrects the control parameters of the galvanometer assemblies 120 and/or 130 corresponding to the selected array point according to the error between the actual irradiation position of the laser beam LB sensed by the laser sensing element 300 and the selected array point, so that the error between the actual irradiation position of the laser beam LB and the selected array point is smaller than a preset threshold; and step S26, performing correction steps on other array points in the array points one by one to finish the correction of the control parameters of all the array points.

In step S21, since the relative position between the stage moving unit and the laser beam generator unit is not changed, the controller 400 may generate a plurality of array points in the maximum irradiation area ROE of the laser beam generator unit 100 with reference to an orthogonal coordinate system (of course, another coordinate system) of the stage moving unit. It should be noted that the maximum irradiation area is defined as the maximum range of the laser beam LB (the area defined by the intersection of the laser beam shown by the outermost oblique broken line of the laser generating assembly 100 and the plane of the beam sensing surface 300a of the laser sensing element 300 in fig. 3, the broken line frame surrounding the periphery of the laser sensing element 300 in fig. 1) moved by the pair of

galvanometer assemblies

120 and 130 of the laser generating assembly 100. Referring to fig. 5, the distribution area of the plurality of array points is larger than the processing area 500a of the substrate 500 to be processed, because the area to be processed (i.e., the processing area 500a) in the substrate 500 to be processed is formed based on the opening structure on the substrate carrier 200, and the maximum irradiation area needs to be larger than the size of the opening structure, so that the laser processing can be performed on the entire processing area 500a of the substrate 500 to be processed, which is supported and fixed on the substrate carrier 200. The distribution area 600 of the plurality of array points is smaller than the maximum irradiation area ROE to ensure that the laser beam LB can be irradiated to each of the plurality of array points.

It should be noted that, in step S21, the distance between adjacent array points in the maximum irradiation area ROE is adjustable. When the laser processing system is installed for the first time, since the corrected control parameters of the galvanometer components 120 and/or 130 do not exist at all, the correction needs to be carried out in the maximum irradiation area ROE at a smaller array point interval; in the subsequent laser processing, since the corrected control parameters of the galvanometer component 120 and/or 130 exist, in order to improve the operation efficiency of the whole system, the control parameters of the galvanometer component 120 and/or 130 can be corrected by adopting a thinner array point spacing.

In step S22, the control part 400 may generate control parameters of the galvanometer assemblies 120 and/or 130 of the laser generating assembly 100 according to a preset program to irradiate the laser beam LB to the several array points. As described above, the deflection driving element of the galvanometer assembly 120 and/or 130 may drive the deflection angle thereof by, for example, a voltage (current), thereby driving the deflection of the light deflecting element connected thereto, and adjust the movement of the laser beam LB in the x direction (galvanometer assembly 120) and/or the y direction (galvanometer assembly 130). For example, if an upper limit driving voltage of +3V can make an upper limit deflection angle (e.g., +15 °) of the light deflecting element 123 and/or 133, and a lower limit driving voltage of-3V can make a lower limit deflection angle (e.g., -15 °) of the light deflecting element 123 and/or 133, when the driving voltage is a voltage value between the upper and lower limit driving voltages, the light deflecting element 123 and/or 133 can be deflected toward a certain angle between the upper and lower limit deflection angles.

Specifically, in step S23, the control part 400 drives the substrate carrier 200 to move by using the moving component, so as to move the center of the laser sensing element 300 to one of the array points.

In step S25, the step of the control part 400 correcting the control parameters of the galvanometer assembly 120 and/or 130 according to the error between the actual irradiation position of the laser beam LB perceived by the laser sensing element 300 and the selected array point so that the error between the actual irradiation position of the laser beam LB and the selected array point is smaller than the preset threshold value includes the control part 400 correcting the control parameters of the galvanometer assembly 120 and/or 130 for the first time when the error between the actual irradiation position of the laser beam LB perceived by the laser sensing element 300 and the selected array point is larger than the preset threshold value; the control part 400 controls the galvanometer assemblies 120 and/or 130 of the laser generating assembly 100 according to the control parameters after the first correction so as to irradiate the laser beam LB to the selected array point again; the actual irradiation position of the laser beam LB sensed again by the laser sensing element 300 is, when an error between the actual irradiation position of the laser beam LB sensed again and the selected array point is less than the preset threshold, the correction operation for the selected array point is finished. And when the error between the actual irradiation position of the laser beam LB sensed again and the selected array point is still greater than the preset threshold, the step S24 is repeatedly performed until the error between the actual irradiation position of the laser beam LB sensed last and the selected array point is still greater than the preset threshold. It should be noted that, since the two

galvanometer assemblies

120 and 130 control the movement of the laser beam LB in the x and y directions, respectively, the control parameters of the

corresponding galvanometer assemblies

120 and 130 can be corrected according to the errors in the x and y directions between the actual irradiation position of the laser beam LB and the selected array point, respectively. It should be noted that the control parameters of the galvanometer components 120 and/or 130 include the driving voltage or the driving current of the deflection driving elements 121 and/or 131.

In step S26, the steps of steps S23-25 are repeatedly performed to perform the correction step for each of the other array points of the number of array points to complete the correction of the control parameter for the entire array point.

The control part 400 controls the

galvanometer units

120 and 130 of the laser generator unit 100 by using the corrected control parameter to change the irradiation position of the laser beam LB so as to process the processing region 500a of the substrate 500 to be processed.

In steps S30 and S40, after the control parameters of the entire array dots are corrected, the corrected parameters may be stored in the storage unit of the control part 400, then the control part 400 drives the substrate stage 200 to move by the stage moving assembly to move the processing region 500a of the substrate 500 to be processed placed on the substrate stage 200 into the maximum irradiation region ROE of the laser generating assembly 100, and the control part 400 controls the galvanometer assemblies 120 and/or 130 of the laser generating assembly 100 by using the corrected control parameters to change the irradiation position of the laser beam LB to process the processing region 500a of the substrate 500 to be processed.

In summary, the laser processing system of the present embodiment can improve the precision of the irradiation position of the laser beam LB, and improve the substrate processing precision; the laser processing system of the embodiment can improve the application efficiency of the device by changing the interval between the adjacent array points according to the situation; the laser processing system of the present embodiment can improve the correction accuracy of the entire processing region 500a of the processing substrate, particularly, the edge portion of the processing substrate; in the laser processing system of the embodiment, the support fixing element is introduced into the galvanometer assembly, and the support fixing element keeps the alignment of the rotation axis of the light deflection element and the rotation axis of the deflection driving element, so that harmful vibration in a direction perpendicular to the rotation axis is avoided when the light deflection element rotates around the rotation axis of the light deflection element, random errors of laser irradiation positions of the laser processing system are effectively improved, the laser irradiation position correction of the laser processing system can be completed more quickly, and the correction efficiency is improved.

In the description herein, numerous specific details are provided, such as examples of components and/or methods, to provide a thorough understanding of embodiments of the invention. One skilled in the relevant art will recognize, however, that an embodiment of the invention can be practiced without one or more of the specific details, or with other apparatus, systems, assemblies, methods, components, materials, parts, and/or the like. In other instances, well-known structures, materials, or operations are not specifically shown or described in detail to avoid obscuring aspects of embodiments of the invention.

Reference throughout this specification to "one embodiment," "an embodiment," or "a specific embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment, and not necessarily all embodiments, of the present invention. Thus, respective appearances of the phrases "in one embodiment", "in an embodiment", or "in a specific embodiment" in various places throughout this specification are not necessarily referring to the same embodiment. Furthermore, the particular features, structures, or characteristics of any specific embodiment of the present invention may be combined in any suitable manner with one or more other embodiments. It is to be understood that other variations and modifications of the embodiments of the invention described and illustrated herein are possible in light of the teachings herein and are to be considered as part of the spirit and scope of the present invention.

It will also be appreciated that one or more of the elements shown in the figures can also be implemented in a more separated or integrated manner, or even removed for inoperability in some circumstances or provided for usefulness in accordance with a particular application.

Additionally, any reference arrows in the drawings/figures should be considered only as exemplary, and not limiting, unless otherwise expressly specified. Further, as used herein, the term "or" is generally intended to mean "and/or" unless otherwise indicated. Combinations of components or steps will also be considered as being noted where terminology is foreseen as rendering the ability to separate or combine is unclear.

As used in the description herein and throughout the claims that follow, "a", "an", and "the" include plural references unless otherwise indicated. Also, as used in the description herein and throughout the claims that follow, unless otherwise indicated, the meaning of "in …" includes "in …" and "on … (on)".

The above description of illustrated embodiments of the invention, including what is described in the abstract of the specification, is not intended to be exhaustive or to limit the invention to the precise forms disclosed herein. While specific embodiments of, and examples for, the invention are described herein for illustrative purposes only, various equivalent modifications are possible within the spirit and scope of the present invention, as those skilled in the relevant art will recognize and appreciate. As noted, these modifications may be made to the present invention in light of the foregoing description of illustrated embodiments of the invention and are to be included within the spirit and scope of the present invention.

The system and method have been described herein in general terms as providing details to facilitate the understanding of the invention. Furthermore, various specific details have been given to provide a general understanding of the embodiments of the invention. One skilled in the relevant art will recognize, however, that an embodiment of the invention can be practiced without one or more of the specific details, or with other apparatus, systems, assemblies, methods, components, materials, parts, and/or the like. In other instances, well-known structures, materials, and/or operations are not specifically shown or described in detail to avoid obscuring aspects of embodiments of the invention.

Thus, although the present invention has been described herein with reference to particular embodiments thereof, freedom of modification, various changes and substitutions are intended in the foregoing disclosure, and it should be understood that in some instances some features of the present invention will be employed without a corresponding use of other features without departing from the scope and spirit of the present invention as set forth. Accordingly, many modifications may be made to adapt a particular situation or material to the essential scope and spirit of the present invention. It is intended that the invention not be limited to the particular terms used in following claims and/or to the particular embodiment disclosed as the best mode contemplated for carrying out this invention, but that the invention will include any and all embodiments and equivalents falling within the scope of the appended claims. Accordingly, the scope of the invention is to be determined solely by the appended claims.

Claims

1. A laser machining system, the laser machining system comprising:

2. The laser machining system of claim 1, wherein the stage moving assembly includes a first stage moving assembly that drives the substrate stage in a first direction and a second stage moving assembly that drives the substrate stage in a second direction, the first direction being perpendicular to the second direction.

3. The laser processing system of claim 1, wherein the axis of rotation of the light deflecting element of one of said galvanometer assemblies is perpendicular to the axis of rotation of the light deflecting element of the other of said galvanometer assemblies.

4. The laser processing system of claim 1, wherein the size of the processing area of the substrate to be processed is smaller than the maximum irradiation area of the laser generating assembly.

5. The laser machining system of claim 1, wherein the condensing element comprises a condensing lens.

6. The laser machining system of claim 1, wherein the light deflecting element comprises a mirror.

7. The laser machining system of claim 1, wherein the deflection drive element comprises an oscillating motor.

8. The laser machining system of claim 1, wherein the laser sensing element includes an image capture device having an image sensor.

9. The laser processing system of claim 1, wherein the stage moving assembly comprises a linear motor structure or a combination of a rotary motor and a ball screw.

10. The laser processing system of any of claims 1-9, wherein the control parameter of the galvanometer assembly comprises a drive voltage or a drive current of a deflection drive element of the galvanometer assembly.