CN212519814U

CN212519814U - PI substrate phase transition type heat conduction gasket

Info

Publication number: CN212519814U
Application number: CN202021468716.1U
Authority: CN
Inventors: 林秋燕; 黎海涛; 徐保
Original assignee: Dongguan Hanpin Electronics Co ltd
Current assignee: Dongguan Hanpin Electronics Co ltd
Priority date: 2020-07-23
Filing date: 2020-07-23
Publication date: 2021-02-09
Anticipated expiration: 2030-07-23

Abstract

The utility model discloses a PI substrate phase transition type heat conduction gasket, including the PI layer, PI layer both sides are the compound first phase transition layer of coating respectively and the second phase transition layer, PI layer one side is kept away from on the first phase transition layer is provided with firstly from the type membrane, PI layer one side is kept away from on the second phase transition layer is provided with the second from the type membrane, and this structure has good phase transition performance, and the material is the solid at room temperature to be convenient for handle, can regard it as dry pad clean and firm surface that is used for fin or device, when reaching device operating temperature, phase transition material softens, adds a little tightening force, and the material just like hot grease is very easy just with two cooperation surface bonding, has the ability that can fill space between interface air gap and device and fin completely, and the PI layer has certain design simultaneously and supports and tear resistance, convenient to use.

Description

PI substrate phase transition type heat conduction gasket

Technical Field

The utility model relates to an electron trade, in particular to PI substrate phase transition type heat gasket.

Background

The heat conducting gaskets fill the air gap between the heat generating device and the heat sink or metal base, and their flexible and elastic characteristics enable them to be used to cover very uneven surfaces. Heat is conducted from separator or whole PCB to metal casing or diffuser plate to can improve the efficiency and the life of the electronic component that generates heat, present heat conduction gasket mainly has, the first: HONEYWELL PCM45F or Laerde PCM585 (without base material) and the like, but the two heat-conducting gaskets have poor insulation property, the product has no strength and is not good for application, the second one is a heat-conducting silica gel glass fiber cloth base material or heat-conducting silica gel without base material, and the silica gel gasket has large interface thermal resistance and poor heat-conducting effect when in application.

SUMMERY OF THE UTILITY MODEL

The utility model provides a technical problem provide a PI substrate phase transition type heat conduction gasket, it has and reduces the thermal resistance for the performance of the fin that links to each other with it reaches the best characteristic.

The utility model provides a technical scheme that its technical problem adopted is: the utility model provides a PI substrate phase transition type heat conduction gasket, includes the PI layer, compound first phase transition layer and second phase transition layer of PI layer both sides coating respectively, first phase transition layer is kept away from PI layer one side and is provided with first from the type membrane, second phase transition layer is kept away from PI layer one side and is provided with the second from the type membrane.

Further, the method comprises the following steps: the PI layer is a heat-conducting PI layer.

Further, the method comprises the following steps: the thickness of the PI layer is 50 u.

Further, the method comprises the following steps: the thickness of the first phase change layer and the second phase change layer is 6 u-150 u.

The utility model has the advantages that:

1. the heat conduction type PI breakdown voltage is larger than 4KV/mm, the heat conduction coefficient can reach 6W/mk, the heat conduction type PI breakdown voltage is used for reducing the thermal resistance between the power consumption type electronic device and the heat radiating fin connected with the power consumption type electronic device to the minimum, the channel with small thermal resistance enables the performance of the heat radiating fin to reach the best, and the reliability of the microprocessor, the memory module converter and the power module is improved;

2. the PI substrate phase-change type heat-conducting gasket has good phase-change performance, is solid at room temperature and convenient to process, can be used as a dry gasket for cleaning and firming the surface of a radiating fin or a device, when reaching the working temperature of the device, the phase-change material becomes soft, a little of tightening force is added, the material is easy to adhere to two matching surfaces just like hot grease, the interface wettability is good, the PI substrate phase-change type heat-conducting gasket has the capability of completely filling an interface air gap and a gap between the device and the radiating fin, meanwhile, the PI layer has certain shaping supporting and anti-tearing functions and is convenient to use, so that the PI substrate phase-change type heat-conducting gasket is superior to a non-flowing elastomer in heat-conducting effect, and has the characteristics of good adhesion, small interface thermal resistance, strong gap filling capability and good insulation property

Drawings

Fig. 1 is a schematic structural view of a PI substrate phase-change type heat conduction pad.

Labeled as: the multilayer film comprises a PI layer 1, a first phase change layer 2, a second phase change layer 3, a first release film 4 and a second release film 5.

Detailed Description

In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

As shown in fig. 1, a PI substrate phase change type heat conduction gasket comprises a PI layer 1, a first phase change layer 2 and a second phase change layer 3 are respectively coated and compounded on two sides of the PI layer 1, a first release film 4 is arranged on one side, away from the PI layer 1, of the first phase change layer 2, a second release film 5 is arranged on one side, away from the PI layer 1, of the second phase change layer 3, the phase change temperature of the PI substrate phase change type heat conduction gasket of the structure is 45-48 ℃, the PI substrate phase change type heat conduction gasket can be melted and liquefied when the phase change temperature is higher than the phase change temperature, air can be removed like a heat dissipation paste, the gasket is filled in a material, is solid at room temperature, can be used as a dry gasket for cleaning and firming a surface of a heat dissipation fin or a device, when the working temperature of the device is reached, the heat conduction type PI substrate phase change sheet is softened, a little tightening force is applied, the gasket is easy to, the PI layer 1 has certain shaping supporting and anti-tearing functions and is convenient to use, so that the PI substrate phase-change type heat-conducting gasket is superior to a non-flowing elastomer in heat-conducting effect, has the characteristics of good adhesion, small interface thermal resistance, strong gap-filling capability and good insulating property, can be applied to application occasions with high requirements on the insulating property of electronic products,

the manufacturing process of the gasket is as follows: firstly, stirring and dispersing heat-conducting phase-change raw materials by matching with a process by using a double-planet stirrer with a heating device, then transferring the mixture into a coating machine with a glue groove with the heating device, coating the mixture on the PI layer 1, after natural cooling and solidification, coating release paper or release film, and then coating the mixture on the PI layer 1 on the other surface.

On the basis, the PI layer 1 is a heat-conducting PI layer 1, the thickness of the PI layer 1 is 50u, the thicknesses of the first phase change layer 2 and the second phase change layer 3 are 6 u-150 u, and the total thickness of the gasket is 100 u-300 u.

The above-mentioned embodiments, further detailed description of the objects, technical solutions and advantages of the present invention, it should be understood that the above-mentioned embodiments are only specific embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims

1. The utility model provides a PI substrate phase transition type heat conduction gasket which characterized in that: including PI layer (1), compound first phase change layer (2) and second phase change layer (3) are scribbled respectively to PI layer (1) both sides, PI layer (1) one side is kept away from in first phase change layer (2) is provided with first from type membrane (4), PI layer (1) one side is kept away from in second phase change layer (3) is provided with the second from type membrane (5).

2. The PI substrate phase-change thermal gasket of claim 1, wherein: the PI layer (1) is a heat-conducting PI layer (1).

3. The PI substrate phase-change thermal gasket of claim 1, wherein: the thickness of the PI layer (1) is 50 u.

4. The PI substrate phase-change thermal gasket of claim 1, wherein: the thicknesses of the first phase change layer (2) and the second phase change layer (3) are 6-150 u.