CN212517215U - MPS diode device - Google Patents
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- CN212517215U CN212517215U CN202021074035.7U CN202021074035U CN212517215U CN 212517215 U CN212517215 U CN 212517215U CN 202021074035 U CN202021074035 U CN 202021074035U CN 212517215 U CN212517215 U CN 212517215U
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Abstract
The utility model relates to an electron device technical field discloses a MPS diode device, this a plurality of cells including the parallelly connected setting of MPS diode device, wherein: each unit cell comprises a cathode electrode, a substrate, an epitaxial layer, a buffer layer and an anode electrode, wherein the substrate, the epitaxial layer, the buffer layer and the anode electrode are sequentially formed on the cathode electrode, two active regions are formed on one side, deviating from the substrate, of the epitaxial layer, the forbidden band width of the buffer layer is larger than that of the epitaxial layer, the material of the buffer layer and the material of the epitaxial layer are allotrope bodies, a first opening is formed in the buffer layer at a position opposite to the active regions, and an ohmic metal layer is formed in the first opening. The MPS diode device reduces the reverse leakage loss and the forward conduction loss at the same time, so that two performance parameters of the reverse leakage and the forward working voltage are improved at the same time, and the MPS diode device has better performance.
Description
Technical Field
The utility model relates to an electron device technical field, in particular to MPS diode device.
Background
SiC, as a third-generation novel semiconductor, has the characteristics of wide forbidden band width, high critical breakdown electric field, high thermal conductivity and the like, and has great advantages compared with the traditional silicon-based device when being applied to the fields of high temperature, high voltage, high frequency, high power and the like.
The SiC SBD (silicon carbide Schottky barrier diode) has reduced forward conduction voltage and short reverse recovery time. However, under reverse blocking operating conditions, there is a disadvantage that leakage current is large. In order to improve the problem of reverse leakage of the SiC SBD, a jbs (junction barrier schottky) or mps (merge pin schottky) structure is developed, in which a depletion region formed at a p-type heavily doped region can bear a large reverse voltage on one hand, and on the other hand, the depletion regions are connected with each other to wrap a schottky junction, so that the problem of increase of reverse leakage caused by reduction of a schottky barrier when the device operates in a reverse direction can be prevented. Therefore, the prior art cannot reduce the reverse leakage of the device while reducing the forward conduction loss of the device.
SUMMERY OF THE UTILITY MODEL
The utility model provides a MPS diode device, above-mentioned MPS diode device has reduced forward conduction loss when reducing reverse leakage loss for two performance parameters of reverse electric leakage and forward operating voltage can be improved simultaneously, thereby reach higher performance.
In order to achieve the above purpose, the utility model provides the following technical scheme:
an MPS diode device comprising a plurality of cells arranged in parallel, wherein:
every unit cell includes the cathode electrode and forms in proper order in substrate, epitaxial layer, buffer layer and the anode electrode on the cathode electrode, one side that the epitaxial layer deviates from the substrate is formed with two active areas, the forbidden bandwidth of buffer layer is greater than the forbidden bandwidth of epitaxial layer just the material of buffer layer with the material of epitaxial layer is the allotrope, in the buffer layer with the relative position in active area is formed with first trompil, be formed with the ohm metal level in the first trompil.
In the MPS diode device, the buffer layer is disposed between the epitaxial layer and the anode electrode, and a forbidden bandwidth of the buffer layer is greater than a forbidden bandwidth of the epitaxial layer, so that a schottky barrier height in the MPS diode device can be modulated, the schottky barrier height is reduced, and a forward conduction loss of the MPS diode device is reduced; meanwhile, the buffer layer is made of an allotrope material with the epitaxial layer, so that the problem of stress mismatch of an interface between the buffer layer and the epitaxial layer is well improved, the interface state is greatly reduced, and the reverse leakage of the MPS diode device can be reduced; in the MPS diode device, the forward conduction loss is reduced while the reverse leakage loss is reduced, so that two performance parameters of the reverse leakage and the forward working voltage are improved simultaneously, and the MPS diode device has better performance.
Preferably, the buffer layer is a nanostructure layer.
Preferably, the buffer layer is a quantum dot layer.
Preferably, the quantum dots in the quantum dot layer are cylindrical, spherical or convex in shape, and when the quantum dots are cylindrical, the bottom surfaces of the cylindrical quantum dots are in contact with the epitaxial layer; when the quantum dots are in a convex shape, the shape of the contour line of the quantum dots on one side departing from the epitaxial layer is a parabola in the section perpendicular to the direction of the epitaxial layer.
Preferably, the substrate is made of n-type 3C-SiC, the epitaxial layer is made of n-type 3C-SiC, and the doping concentration of the substrate is higher than that of the epitaxial layer; the buffer layer is made of 4H-SiC.
Preferably, the material of the ohmic metal layer is titanium.
Preferably, the ohmic metal layer has a thickness of 1 um.
The utility model also provides a preparation method of MPS diode device, include:
forming an epitaxial layer on a substrate, wherein one side, which is far away from the substrate, of the epitaxial layer comprises an active region forming region for forming an active region;
forming an active region in the active region forming region;
annealing treatment;
forming a buffer layer with a forbidden band width larger than that of the epitaxial layer on one side of the epitaxial layer, which is far away from the substrate, and patterning the part, opposite to the active region, of the buffer layer to form a first opening penetrating through the buffer layer;
forming an ohmic metal layer in the first opening, and forming a cathode electrode on one side of the substrate, which is far away from the epitaxial layer;
and forming an anode electrode on one side of the buffer layer and the ohmic metal layer, which is deviated from the epitaxial layer.
Preferably, the forming of the active region within the active region formation region includes:
forming a sacrificial oxide layer on the surface of one side, away from the substrate, of the epitaxial layer;
forming a barrier layer on one side of the sacrificial oxide layer, which is far away from the epitaxial layer, and patterning the part, which is opposite to the active region forming region, in the barrier layer to form a second opening penetrating through the barrier layer;
injecting ions into the second opening to form an active region in an active region forming region in the epitaxial layer;
and removing the sacrificial oxide layer and the barrier layer to expose the epitaxial layer.
Preferably, the ions are aluminum ions.
Preferably, the substrate is made of n-type 3C-SiC, the epitaxial layer is made of n-type 3C-SiC, and the doping concentration of the substrate is higher than that of the epitaxial layer; the buffer layer is made of 4H-SiC.
Preferably, the annealing treatment comprises:
forming a carbon film on one side of the epitaxial layer, which faces away from the substrate;
carrying out high-temperature annealing treatment;
removing the carbon film to expose the epitaxial layer.
Preferably, the buffer layer is a quantum dot layer.
Preferably, the quantum dot layer is formed by the following method:
growing a buffer film layer on one side of the epitaxial layer, which is far away from the substrate, at the temperature higher than 2000 ℃ by a sublimation method;
and annealing the buffer film layer to form a quantum dot layer.
Drawings
Fig. 1 to fig. 5 are schematic diagrams illustrating a manufacturing process of an MPS diode device according to an embodiment of the present invention;
fig. 6 is a schematic cross-sectional view of a first quantum dot structure provided in an embodiment of the present invention;
fig. 7 is a schematic cross-sectional view of a second quantum dot structure provided in an embodiment of the present invention;
fig. 8 is a schematic cross-sectional view of a third quantum dot structure provided in an embodiment of the present invention.
Icon:
1-a cathode electrode; 2-a substrate; 3-an epitaxial layer; 4-a buffer layer; 5-an anode electrode; 6-an active region; a 7-ohm metal layer; 8-first opening; 9-sacrificial oxide layer; 10-a barrier layer; 11-a second opening; 12-a carbon film; 13-buffer thin film layer, 14-quantum dot.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 5, the present invention provides an MPS diode device, including a plurality of cells arranged in parallel, wherein:
each cell comprises a cathode electrode 1, a substrate 2 sequentially formed on the cathode electrode 1, an epitaxial layer 3, a buffer layer 4 and an anode electrode 5, two active regions 6 are formed on one side of the epitaxial layer 3 departing from the substrate 2, the forbidden bandwidth of the buffer layer 4 is greater than that of the epitaxial layer 3, the material of the buffer layer 4 and the material of the epitaxial layer 3 are allotrope, a first opening 8 is formed in the buffer layer 4 at a position opposite to the active regions 6, and an ohmic metal layer 7 is formed in the first opening 8.
In the MPS diode device, the buffer layer 4 is disposed between the epitaxial layer 3 and the anode electrode 5, and the forbidden bandwidth of the buffer layer 4 is greater than that of the epitaxial layer 3, so that the schottky barrier height in the MPS diode device can be modulated, the schottky barrier height is reduced, and the forward conduction loss of the MPS diode device is reduced; meanwhile, the buffer layer 4 is made of an allotrope material with the epitaxial layer 3, so that the problem of stress mismatch of the interface between the buffer layer 4 and the epitaxial layer 3 is well improved, the interface state is greatly reduced, and the reverse leakage of the MPS diode device can be reduced; in the MPS diode device, the forward conduction loss is reduced while the reverse leakage loss is reduced, so that two performance parameters of the reverse leakage and the forward working voltage are improved simultaneously, and the MPS diode device has better performance.
Specifically, the buffer layer 4 is a nanostructure layer.
The buffer layer 4 can adopt a thin film layer or a nano-structure layer, and the energy band width of the buffer layer 4 can be further adjusted by adopting the nano-structure layer, so that the Schottky barrier height is further modulated, and the forward conduction loss of the device is reduced.
Specifically, the buffer layer 4 is a quantum dot layer, as shown in fig. 6, 7 and 8, the quantum dots in the quantum dot layer are cylindrical, spherical or convex in shape, and when the quantum dots are cylindrical, the bottom surfaces of the cylindrical quantum dots are in contact with the epitaxial layer 3; when the quantum dots are convex, the contour lines of the quantum dots on the side departing from the epitaxial layer 3 in the section perpendicular to the epitaxial layer 3 are parabolic.
The buffer layer 4 can adopt a nanoscale quantum dot layer, is convenient to prepare, and can control the shape, the size and the like of quantum dots in the quantum dot layer by controlling the annealing temperature in the preparation process to adjust the forbidden band width of the buffer layer 4, so that the Schottky barrier height is further adjusted, and the MPS diode device achieves better performance.
Specifically, the substrate 2 is made of n-type 3C-SiC, the epitaxial layer 3 is made of n-type 3C-SiC, and the doping concentration of the substrate 2 is higher than that of the epitaxial layer 3; the buffer layer 4 is made of 4H-SiC.
The buffer layer 4 is made of 4H-SiC, the epitaxial layer 3 is made of n-type 3C-SiC, the forbidden bandwidth of the 4H-SiC is larger than that of the 3C-SiC, so that the Schottky barrier height can be modulated, and compared with the case that other wide-forbidden-band semiconductor materials are adopted as the buffer layer 4 and the 4H-SiC is adopted as the buffer layer 4, the problem of stress mismatch of interface lattices between the buffer layer made of the 4H-SiC and the epitaxial layer made of the 3C-SiC is well improved due to the fact that the 4H-SiC and the 3C-SiC are homomorphic bodies, the interface state is greatly reduced, and the problem of overlarge reverse leakage caused by the interface state can be solved.
Specifically, the material of the ohmic metal layer 7 is titanium.
Specifically, the thickness of the ohmic metal layer 7 is 1 um.
The utility model also provides a preparation method of MPS diode device, as shown in fig. 1 to 5, include:
s101: forming an epitaxial layer 3 on a substrate 2, the side of the epitaxial layer 3 facing away from the substrate 2 comprising an active region forming region for forming an active region 6, as shown in fig. 1;
s102: forming an active region 6 in the active region forming region, as shown in fig. 2e, in conjunction with fig. 2a, 2b, 2c and 2 d;
s103: annealing treatment, as shown in fig. 3;
s104: forming a buffer layer 4 with a forbidden band width larger than that of the epitaxial layer 3 on a side of the epitaxial layer 3 away from the substrate 2, and patterning a portion of the buffer layer 4 opposite to the active region 6 to form a first opening 8 penetrating through the buffer layer 4, as shown in fig. 4b and 4c in combination with fig. 4 a;
s105: forming an ohmic metal layer 7 in the first opening 8 and a cathode electrode 1 on the side of the substrate 2 facing away from the epitaxial layer 3, as shown in fig. 4 c;
s106: an anode electrode 5 is formed on the buffer layer 4 and the ohmic metal layer 7 on the side facing away from the epitaxial layer 3, as shown in fig. 5.
In the preparation method of the MPS diode device, the buffer layer 4 between the epitaxial layer 3 and the anode electrode 5 is formed on the epitaxial layer 3, the energy gap of the buffer layer 4 is larger than that of the epitaxial layer 3, and the material of the buffer layer 4 and the material of the epitaxial layer 3 are allotropes, so that the reverse leakage of the MPS diode device can be reduced while the schottky barrier height is reduced to reduce the forward conduction loss, and the two performance parameters of the reverse leakage and the forward working voltage can be improved at the same time, thereby the performance of the MPS diode device is better.
Specifically, as shown in fig. 2a, 2b, 2c, and 2e, forming the active region 6 in the active region formation region includes:
s201: forming a sacrificial oxide layer 9 on a surface of the epitaxial layer 3 facing away from the substrate 2, as shown in fig. 2 a;
s202: forming a barrier layer 10 on a side of the sacrificial oxide layer 9 away from the epitaxial layer 3, and patterning a portion of the barrier layer 10 opposite to the active region formation region to form a second opening 11 penetrating the barrier layer 10, as shown in fig. 2b and 2 c;
s203: implanting ions in the second opening 11 to form an active region 6 in the active region forming region in the epitaxial layer 3, as shown in fig. 2 d;
s204: the sacrificial oxide layer 9 and the barrier layer 10 are removed to expose the epitaxial layer 3 as shown in fig. 2 e.
In the step of forming the active region 6, in S201, a sacrificial oxide layer 9 is formed on a surface of one side of the epitaxial layer 3, which is away from the substrate 2, and the sacrificial oxide layer 9 serves as a buffer that can play a role in buffering when ions are implanted into the active region forming region of the subsequent active region 6, so as to prevent high-energy particles during ion implantation from being directly implanted into the surface of the epitaxial layer 3 to cause amorphization, thereby causing an excessive electric leakage problem, wherein the sacrificial oxide layer 9 is 0.1um thick and is made of silicon dioxide; in S202, a barrier layer 10 is formed on a side of the sacrificial oxide layer 9 away from the epitaxial layer 3, and a portion of the barrier layer 10 opposite to the active region forming region is patterned to form a second opening 11 penetrating through the barrier layer 10, the barrier layer 10 is used to prevent ions from being implanted into a portion outside the active region forming region, the barrier layer 10 may be made of polysilicon or carbonized photoresist, and the thickness of the barrier layer 10 may be 2 um; in S203, implanting ions into the second opening 11 to form an active region 6 in the active region formation region in the epitaxial layer 3, the energy and dose of the ion implantation being determined by the required forward operating voltage of the MPS diode device; in S204, the sacrificial oxide layer 9 and the barrier layer 10 are removed to expose the epitaxial layer 3, and the sacrificial oxide layer 9 and the barrier layer 10 are removed after the active region 6 is formed for the convenience of ion implantation, so as to perform the subsequent process.
Specifically, the ions are aluminum ions.
Specifically, in the MPS diode device prepared by the above preparation method, the substrate 2 is made of n-type 3C-SiC, the epitaxial layer 3 is made of n-type 3C-SiC, and the doping concentration of the substrate 2 is higher than that of the epitaxial layer 3; the buffer layer 4 is made of 4H-SiC.
The buffer layer 4 is made of 4H-SiC, the epitaxial layer 3 is made of n-type 3C-SiC, the forbidden band width of the 4H-SiC is larger than that of the 3C-SiC, and therefore the Schottky barrier height can be modulated.
Specifically, the annealing treatment includes:
s301: forming a carbon film 12 on the side of the epitaxial layer 3 facing away from the substrate 2, as shown in fig. 3;
s302: carrying out high-temperature annealing treatment;
s303: the carbon film 12 is removed to expose the epitaxial layer 3.
After the active region 6 is prepared, annealing treatment is required, so that on one hand, the electrical activity of doped ions in the active region 6 can be enhanced, and on the other hand, the lattice damage caused by ion implantation can be repaired, in S301, a carbon film 12 is formed on one side of the epitaxial layer 3, which is far away from the substrate 2, specifically, 1um to 1.5um deposited photoresist can be adopted, and carbonization treatment is performed on the photoresist to form the carbon film 12, and the carbon film 12 can relieve the surface roughening problem of the epitaxial layer 3 caused by Si sublimation in subsequent annealing; in S302, performing high-temperature annealing treatment, specifically performing annealing treatment at 800-; in S303, the carbon film 12 is removed to expose the epitaxial layer 3, so as to facilitate the subsequent preparation process, and the carbon film 12 may be removed by thermal oxidation, i.e., the carbon film 12 is removed by dry method at 600 ℃. and 800 ℃.
Specifically, the buffer layer 4 is a quantum dot layer.
The quantum dot layer can be used for adjusting the height of the Schottky barrier better, so that the MPS diode device achieves better performance.
Specifically, as shown in fig. 4a, 4b, and 4c, the quantum dot layer is formed by:
s401: growing a buffer film layer 13 by sublimation at a temperature higher than 2000 ℃ on the side of the epitaxial layer 3 facing away from the substrate 2, as shown in fig. 4 a;
s402: patterning the buffer thin film layer 13 opposite to the active region 6 to form a first opening 8 penetrating the buffer layer 4, as shown in fig. 4 b;
s403: the buffer thin film layer 13 is annealed to form a quantum dot layer as shown in fig. 4 c.
In the preparation process of the quantum dot layer, firstly, a buffer film layer 13 needs to be grown on one side of the epitaxial layer 3, which is far away from the substrate 2, by a sublimation method at the temperature higher than 2000 ℃, because the epitaxial layer 3 is made of n-type 3C-SiC, the buffer thin film layer 13 can be made of 4H-SiC which has homomorphic property with 3C-SiC and has a forbidden band width larger than that of 3C-SiC, thereby adjusting the schottky barrier height and lowering the interface state, so that the two performance parameters of the reverse leakage and the forward working voltage are improved at the same time, in S403, annealing the buffer thin film layer 13 to form a quantum dot layer, changing the structure of the buffer thin film layer 13 into the quantum dot layer by the annealing, and the shape and the size of the quantum dots in the quantum dot layer can be adjusted by controlling the annealing temperature, so that the Schottky barrier height can be further modulated.
Because the buffer thin film layer 13 needs to be formed first and then the annealing process is performed when the quantum dot layer is formed, and the annealing process also needs to be performed when the ohmic metal layer 7 is formed in the first opening 8 of the buffer layer 4, two annealing processes can be combined into one annealing process, and the cathode electrode 1 and the ohmic metal layer 7 can be formed simultaneously, so that the quantum dot layer, the cathode electrode 1 and the ohmic metal layer 7 can be formed synchronously, specifically as follows: as shown in fig. 4a, a buffer thin film layer 13 is formed, then as shown in fig. 4b, a first opening 8 is formed on the buffer thin film layer 13, then as shown in fig. 4c, an ohmic metal layer 7 is formed in the first opening 8, a cathode electrode 1 is formed on the side of the substrate 2 away from the epitaxial layer 3, and then annealing treatment is performed under the conditions of 800-.
The ohmic metal layer 7 can deposit a layer of 1um titanium by using an electron beam evaporation technology, the cathode electrode 1 can also be prepared by depositing a layer of 1um titanium by using the electron beam evaporation technology, and the cathode electrode 1 can also be made of a metal material such as nickel or aluminum; as shown in fig. 5, the anode electrode 5 can be prepared by depositing aluminum metal and annealing at 300-500 c to form a schottky contact.
It will be apparent to those skilled in the art that various changes and modifications may be made to the embodiments of the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (6)
1. An MPS diode device, comprising a plurality of cells arranged in parallel, wherein:
every unit cell includes the cathode electrode and forms in proper order in substrate, epitaxial layer, buffer layer and anode electrode on the cathode electrode, one side that the epitaxial layer deviates from the substrate is formed with two active areas, the forbidden bandwidth of buffer layer is greater than the forbidden bandwidth of epitaxial layer just the material of buffer layer with the material of epitaxial layer is the allotrope body, in the buffer layer with the relative position in active area is formed with first trompil, be formed with the ohm metal level in the first trompil.
2. The MPS diode device of claim 1, wherein said buffer layer is a nanostructured layer.
3. The MPS diode device of claim 2, wherein said buffer layer is a quantum dot layer.
4. The MPS diode device of claim 3, wherein the quantum dots in the quantum dot layer are cylindrical, spherical or convex in shape, and when the quantum dots are cylindrical, the bottom surfaces of the cylindrical quantum dots are in contact with the epitaxial layer; when the quantum dots are in a convex shape, the shape of the contour line of the quantum dots on one side departing from the epitaxial layer is a parabola in the tangent plane vertical to the epitaxial layer.
5. The MPS diode device of claim 1, wherein said ohmic metal layer is titanium.
6. The MPS diode device of claim 1, wherein the ohmic metal layer has a thickness of 1 um.
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| CN202021074035.7U CN212517215U (en) | 2020-06-11 | 2020-06-11 | MPS diode device |
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| CN202021074035.7U CN212517215U (en) | 2020-06-11 | 2020-06-11 | MPS diode device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI837700B (en) | 2022-03-31 | 2024-04-01 | 力拓半導體股份有限公司 | MERGED PiN SCHOTTKY (MPS) DIODE AND METHOD OF MANUFACTURING THE SAME |
| US11990553B2 (en) | 2022-03-31 | 2024-05-21 | Leap Semiconductor Corp. | Merged PiN Schottky (MPS) diode and method of manufacturing the same |
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2020
- 2020-06-11 CN CN202021074035.7U patent/CN212517215U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI837700B (en) | 2022-03-31 | 2024-04-01 | 力拓半導體股份有限公司 | MERGED PiN SCHOTTKY (MPS) DIODE AND METHOD OF MANUFACTURING THE SAME |
| US11990553B2 (en) | 2022-03-31 | 2024-05-21 | Leap Semiconductor Corp. | Merged PiN Schottky (MPS) diode and method of manufacturing the same |
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