CN212485794U - Seed source driving circuit of gain switch semiconductor laser - Google Patents
Seed source driving circuit of gain switch semiconductor laser Download PDFInfo
- Publication number
- CN212485794U CN212485794U CN202021074982.6U CN202021074982U CN212485794U CN 212485794 U CN212485794 U CN 212485794U CN 202021074982 U CN202021074982 U CN 202021074982U CN 212485794 U CN212485794 U CN 212485794U
- Authority
- CN
- China
- Prior art keywords
- circuit
- semiconductor laser
- seed source
- constant current
- laser seed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The utility model provides a gain switch semiconductor laser seed source drive circuit, which comprises a constant current source circuit, a current sampling circuit, a switch signal circuit and a cathode bias circuit, wherein the constant current source circuit is used for providing a working power supply for the semiconductor laser seed source; the current sampling circuit is used for collecting current flowing through a semiconductor laser seed source; the switching signal circuit is used for providing a switching signal for controlling the semiconductor laser seed source signal transmission; and the cathode bias circuit is used for enabling the semiconductor laser seed source to work in a critical state and enabling relaxation oscillation to occur inside the semiconductor laser seed source. The driving of the gain switch semiconductor seeds is realized by a pulse driving method, the width and the repetition frequency of the light pulse are adjusted by adjusting the width and the repetition frequency of the driving electric signal, the circuit is simplified, the integration in a miniaturized picosecond pulse laser system is facilitated, and meanwhile, the control of the pulse width and the repetition frequency of the laser is simple.
Description
Technical Field
The utility model relates to a laser instrument technical field especially relates to a gain switch semiconductor laser seed source drive circuit.
Background
In recent years, pulse laser technology, especially ultrashort pulse laser technology, has been developed rapidly, and ultrashort pulse laser with high peak power is widely used in many fields such as nonlinear optics, optical information processing, medical treatment, laser radar and the like. Common methods for generating short pulse laser include mode locking, Q-switching, and gain switching, which can generate pulsed laser outputs with different repetition frequencies, different pulse widths, and different peak powers. Compared with the Q-switching and mode-locking techniques, the gain-switching technique, which is relatively simple in principle, has several significant advantages, especially for gain-switching semiconductor lasers. Gain-switched semiconductor lasers refer to current-pulsed or high-frequency sinusoidal current directly modulated semiconductor lasers. When the injection current is lower than the threshold value, the gain is closed, and the laser is not emitted; when the injection current is above the threshold, the gain is turned on and the first spike produced by the relaxation oscillation of the laser is usually very high in power and very narrow in pulse width. If narrow pulse width or high repetition frequency current pulse is used, stable laser output of ten to hundred picoseconds is easy to obtain. Picosecond to sub-picosecond output can be achieved by further chirp removal and pulse compression measures.
In a driving circuit part of an existing complete gain switching semiconductor laser system, a semiconductor is modulated by a sinusoidal signal with a certain frequency, and a direct current bias (the current value of which is lower than a light emitting threshold value to prevent continuous light emitting) is given to a diode, so that the semiconductor generates a gain switching effect, and the amplitude, the direct current bias and the modulation depth of the signal directly influence an output optical signal.
The circuit configuration is shown in fig. 1, the frequency of the driving signal reaches 1Ghz, and the current at bias te is set below the threshold of the semiconductor seed. Common methods of generating ultrashort electrical pulses are comb signal generators, picosecond photoconductive switches, avalanche transistor generators, or RF sine wave generators. For a given drive pulse amplitude, there is an optimum dc bias to minimize FWHM.
The prior art has the following disadvantages:
1. the sinusoidal signal power that the signal source sent is less, needs to amplify through a bandwidth and gain suitable radio frequency amplifier, increases output power. When the bias current is low, the pulse width is wide. The bias current increases and the pulse width narrows. But continues to increase, the light pulse will have a tail.
2. The frequency of the sine signal controls the pulse width, the generation of the high-frequency signal source needs to adopt digital frequency synthesis (DDS) or a special chip to realize the generation of any frequency, the pulse width control is complex, and the continuous change is not facilitated.
3. The circuit is complex and requires Bias-tee to couple the high frequency signal to the dc Bias.
SUMMERY OF THE UTILITY MODEL
The utility model discloses the technical problem that will solve is: in order to overcome the deficiency among the prior art, the utility model provides a gain switch semiconductor laser seed source drive circuit realizes the drive to gain switch semiconductor seed through pulse drive's method, adjusts the width and the repetition frequency of light pulse through width, the repetition frequency of adjustment drive signal of telecommunication, and does not need complicated circuit structures such as radio frequency signal generator, amplifier and bias-tee, realizes that tens to hundred picoseconds's laser signal takes place.
The utility model provides a technical scheme that its technical problem will adopt is: a seed source drive circuit of a gain switch semiconductor laser comprises a constant current source circuit, a current sampling circuit, a switch signal circuit and a cathode bias circuit,
the constant current source circuit is used for providing a working power supply for the semiconductor laser seed source;
the current sampling circuit is used for collecting current flowing through a semiconductor laser seed source; the current sampling circuit is implemented using sample R1,
the switching signal circuit is used for providing a switching signal for controlling the semiconductor laser seed source signal transmission;
the cathode bias circuit is used for enabling the semiconductor laser seed source to work in a critical oscillation state, and when an excitation current is provided outside, relaxation oscillation occurs inside the cathode bias circuit.
Further, the constant current source circuit sets for circuit, drive capability amplifier circuit and constant current source device including the constant current source current that connects gradually, the constant current source current sets for the size that the circuit is used for setting for the constant current source, drive capability amplifier circuit is used for improving the drive capability, the constant current source device is connected to the positive pole LASER + of semiconductor LASER seed source.
Specifically, the constant current source current setting circuit is realized by adopting adjustable resistor voltage division or DAC (digital-to-analog converter), the driving capability amplifying circuit is realized by adopting an operational amplifier, the constant current source device adopts a transistor Q1, and the transistor Q1 works in a constant current mode and is connected to an anode LASER + of a semiconductor LASER seed source as a constant current source.
Further, the switching signal circuit comprises an external clock signal input circuit, two reference voltage circuits, two high-speed comparators A and B, D triggers and a switching device, the external clock signal input circuit is connected with the positive input ends of the two high-speed comparators A and B, the two reference voltage circuits are respectively connected with the reverse input ends of the two high-speed comparators A and B, the output ends of the high-speed comparators A and B are connected to the input end of the D trigger, and the output end of the D trigger is connected to the switching device.
The external clock signal input circuit inputs an external repetition frequency signal to the forward input ends of two high-speed comparators A and B, two reference voltage circuits output two reference voltage signals, wherein one reference voltage signal is input to the reverse input end of the high-speed comparator A, the other reference voltage signal is input to the reverse input end of the high-speed comparator B, the external repetition frequency signal is compared with the two reference voltage signals through the high-speed comparators A and B respectively to output two output signals with certain delay, and then a rear-stage D trigger is used for acquiring narrow pulses between the two delays to generate an ns-stage pulse width electric signal which is used as a switching signal and is supplied to a switching device.
Further, in order to prevent the input signal from having a level higher than the input margin of the comparators, causing damage, a margin protection circuit is further included, which is provided between the external clock signal input circuit and the positive input terminals of the two high-speed comparators a and B. In practical use, the clock signal can be directly connected to the comparator instead of or as well.
Specifically, the switching device adopts a MOS transistor Q2, the MOS transistor Q2 operates in a switching state, when a switching signal of the MOS transistor Q2 is at a high level, a current of the constant current source device flows through the MOS transistor Q2, and when a switching signal of the MOS transistor Q2 is at a low level, a current of the constant current source device flows through the semiconductor laser seed source.
Specifically, the cathode bias circuit comprises a triode Q4 and an operational amplifier U4, the triode Q4 works in a constant current region to form a constant current source controlled by a base current, the operational amplifier U4 generates a bias voltage capable of being set, so that the semiconductor LASER seed source works in a critical state, and the output of the operational amplifier U4 is connected to a cathode LASER-of the semiconductor LASER seed source.
Further, in order to observe the voltage waveform of the anode in debugging, an anode voltage detection circuit is further included, the anode voltage detection circuit comprises a connector J1 and a resistor R3, and the anode LASER + of the semiconductor LASER seed source is connected to the connector J1 through the resistor R3 and is used for detecting a voltage signal on the anode of the semiconductor LASER seed source in debugging.
The utility model has the advantages that: the utility model provides a pair of gain switch semiconductor laser seed source drive circuit realizes the drive to gain switch semiconductor seed through pulse drive's method, adjusts the width and the repetition frequency of light pulse through width, the repetition frequency of adjustment drive signal of telecommunication, has simplified the circuit, and the integration of being convenient for is in miniaturized picosecond pulse laser system, and laser pulse width, repetition frequency control are simple simultaneously.
Drawings
The present invention will be further explained with reference to the drawings and examples.
Fig. 1 is a schematic block diagram of a driving circuit of a gain switching semiconductor laser system in the related art.
Fig. 2 is a schematic block diagram of a seed source driving circuit of a switching semiconductor laser of the present invention.
Fig. 3 is a schematic diagram of a driving circuit of a semiconductor laser seed source.
Fig. 4 is an ns-level pulse width electrical signal generating circuit.
Detailed Description
The present invention will now be described in detail with reference to the accompanying drawings. This figure is a simplified schematic diagram, and merely illustrates the basic structure of the present invention in a schematic manner, and therefore it shows only the constitution related to the present invention.
As shown in fig. 2, the present invention relates to a gain switching semiconductor laser seed source driving circuit, which comprises a constant current source circuit, a current sampling circuit, a switching signal circuit and a cathode bias circuit, wherein the constant current source circuit is used for providing a working power supply for the semiconductor laser seed source; the current sampling circuit is used for collecting current flowing through a semiconductor laser seed source; the switching signal circuit is used for providing a switching signal for controlling the semiconductor laser seed source signal transmission; the cathode bias circuit is used for enabling the semiconductor seed to work in a critical oscillation state, and when an excitation current is provided outside, relaxation oscillation occurs inside the cathode bias circuit.
The circuit structure of each part will be described in detail below.
As shown in fig. 3, the constant current source circuit includes a constant current source current setting circuit, a driving capability amplifying circuit, and a constant current source device, which are connected in this order. The constant current source current setting circuit is used for setting the current of the constant current source, and the setting can be realized by voltage division of an adjustable resistor or by using a DAC (digital-to-analog converter); the constant current source current setting circuit in this embodiment adopts adjustable resistor voltage division, and includes resistors R10, R11, R12, R13 and R14, a capacitor C10 and a triode Q3, wherein the resistor R11 is an adjustable resistor, the resistor 13 and the adjustable resistor R11 are connected in series and then connected between a 3.3V power supply and ground, a sliding end of the adjustable resistor R11 is connected with the resistor R12 and then connected to a collector of the triode Q3, meanwhile, a collector of the triode Q3 is also connected in series with the resistor R14 and serves as an input end of a voltage signal DAC2, and the larger the voltage of the voltage signal DAC2, the larger the constant current source current is; the base electrode of the triode Q3 is connected with the resistor R10 in series and then is connected to the +2.5V power supply, the +2.5V power supply is connected to the ground through the capacitor C10, and the emitter electrode of the triode Q3 is grounded; the voltage input to the rear stage can be changed by adjusting the position of the sliding end of the adjustable resistor R11, so that the current setting is realized. The driving capability amplifying circuit is realized by adopting an operational amplifier, a two-stage operational amplifier is adopted IN the embodiment, and comprises operational amplifiers U1 and U2, a triode Q6, resistors R7, R8 and R9, capacitors C4, C5, C6, C7, C8 and C9, a forward input end + IN of an operational amplifier U1 is connected to a collector of a triode Q3, meanwhile, a forward input end + IN of the operational amplifier U2 is connected with a capacitor C9 and then grounded, an inverting input end-IN of the operational amplifier U2 is connected with a resistor R8 and then grounded, an output end OUT of the operational amplifier U2 is connected with a resistor R2 and then connected to a base of the triode Q2, an emitter of the triode Q2 is connected with an inverting input end-IN of the operational amplifier U2 and then connected to a +5.0V power supply, and a +5.0V of the operational amplifier U2 is connected with a capacitor C2 for filtering; the collector of the triode Q6 and the common leading-OUT terminal of the resistor R9 are connected to the positive input end + IN of the operational amplifier U1 and used as one path of input signals of the rear-stage operational amplifier U1, the reverse input end-IN of the operational amplifier U1 is connected to the output end OUT of the operational amplifier U1 after passing through the capacitor C5, and the capacitors C4 and C7 are respectively used for filtering the positive power supply input end and the negative power supply input end of the operational amplifier U1. The constant current source device adopts a transistor Q1, the transistor Q1 works in a constant current mode and serves as a constant current source to be connected to an anode LASER + of the semiconductor LASER seed source, an output end OUT of an operational amplifier U1 is connected with a resistor R6 in series and then connected to a base electrode of the transistor Q1, and a collector electrode of the transistor Q1 is sequentially connected with a parallel circuit of a resistor R2 and an inductor L1 in series and a resistor R4 in series and then connected to the anode LASER + of the semiconductor LASER seed source.
The current sampling circuit comprises resistors R1 and R5, a resistor R1 serves as a sampling resistor, a resistor R1 and a resistor R5 are connected IN series, the other end of the resistor R1 is connected to a +5.0V power supply, the other end of the resistor R5 is connected to the inverting input end-IN of the operational amplifier U1, a common leading-out end of the resistors R1 and R5 is connected to an emitter of the transistor Q1, and TP1 and TP2 are respectively led out from two ends of the sampling resistor R1 to serve as current measuring ends and used for detecting a set current value IN debugging.
The anode voltage detection circuit comprises a connector J1 and a resistor R3, wherein an anode LASER + of the semiconductor LASER seed source is connected to the connector J1 through the resistor R3 and is used for detecting a voltage signal on the anode of the semiconductor LASER seed source in debugging, and the connector J1 is preferably an SMA/SMB connector.
The switching signal circuit comprises an ns-level pulse width electric signal generating circuit and a switching device, wherein the switching device adopts an MOS tube Q2, an MOS tube Q2 works in a switching state, when the switching signal of the MOS tube Q2 is at a high level, the current of the constant current source device flows through the MOS tube Q2, and when the switching signal of the MOS tube Q2 is at a low level, the current of the constant current source device flows through a semiconductor laser seed source; the semiconductor LASER device comprises a MOS tube Q2, capacitors C11 and C12, resistors R15 and R16, a switching signal S3 generated by an electrical signal generating circuit with ns-level pulse width is connected to a grid g of the MOS tube Q2 through the capacitor C11 and the resistor R16, a drain d of the MOS tube Q2 is connected to an anode LASER + of a semiconductor LASER seed source, and a source S of the MOS tube Q2 is grounded.
The ns-level pulse width electrical signal generating circuit is shown in fig. 4, and comprises an external clock signal input circuit, a two-way reference voltage circuit, two high-speed comparators A and B, D trigger and a switching device, in order to prevent the input signal level from being higher than the input tolerance of the comparators and causing damage, and a tolerance protection circuit, wherein the tolerance protection circuit is arranged between the external clock signal input circuit and the positive direction input ends of the two high-speed comparators A and B, and in actual use, the tolerance protection circuit is not used, and the external clock signal can be directly connected to the comparators.
In this embodiment, the external clock signal input circuit includes a connector J2, resistors R32 and R33, the connector J2 is an input terminal of an external clock signal, the resistor R32 is a terminal impedance matching, and is connected in parallel between an output terminal of the connector J2 and ground, the external clock signal input through the connector J2 is input to the margin protection circuit through the resistor R33, and the connector J2 preferably adopts an SMA/SMB connector.
The tolerance protection circuit comprises an operational amplifier U9, a diode D5, a triode Q7, resistors R34, R35, R36, R40, R41, R42 and R43, capacitors C18 and C20, and two input signal terminals IN + and IN-, wherein U9 is a circuit for converting a differential input into a single-ended circuit, and IN + and IN-are input terminals of the circuit, and a differential input clock signal can be changed into a single-ended clock signal. The resistor R36 is connected IN parallel between the two input signal ends IN + and IN-, the input signal end IN + is connected IN series with the resistor R34 and then connected to the positive input end of the operational amplifier U9, and the common leading-out end of the input signal end IN + and the resistor R34 is connected with the resistor R33 and used as an external clock signal to be input to the positive input end of the operational amplifier U9; an input signal end IN-series resistor R35 is connected to the reverse input end of the operational amplifier U9, a capacitor C20 is connected between the reverse input end of the operational amplifier U9 and the ground, the reverse input end of the operational amplifier U9 is also connected to a signal end S1 after being connected to a resistor R43 IN series, and the signal end S1 is a bias voltage of the U9; the output end of the operational amplifier U9 is connected with the cathode of a diode D5, the anode of a diode D5 is connected with the collector of a triode Q7, the emitter of the triode Q7 is connected with a resistor R42 in series and then is connected with a +5V power supply, the base of the triode Q7 is grounded through resistors R41 and R40, and the common leading-out end of a diode D5 and the triode Q7 serves as forward input signals of two high-speed comparators A and B at the rear stage.
The two-way reference voltage circuit is used for inputting two-way reference voltage, wherein one-way reference voltage is about 1V, can be realized by adopting any device capable of providing 1V voltage, and is input to the reverse input end of the high-speed comparator A through a signal end S2; the other path of reference voltage adopts external input reference voltage, and can be manually adjusted through an adjustable resistor or controlled by software through a DAC (digital-to-analog converter). The circuit is realized by adopting adjustable resistors, and specifically comprises an operational amplifier U8, resistors R27, R28, R29 and R30, capacitors C16, C17, C19, C21, C22, C23 and C24, wherein the resistor R28 is an adjustable resistor, the adjustable resistor R28 is connected between a 3.3V power supply and the ground in series, a sliding end of the adjustable resistor R28 is connected with the resistor R27 in series and then is connected to an inverted input end of the operational amplifier U8, an external signal DAC3 is connected to an inverted input end of the operational amplifier U8 through a resistor R30, and a capacitor C19 is connected between the inverted input end of the operational amplifier U8 and the ground; capacitors C16 and C17 are respectively connected to the positive and negative power supply ends of the operational amplifier U8 for filtering. The output end of the operational amplifier U8 is connected to the reverse input end of the high-speed comparator B through a resistor R29; c21, C22, C23 and C24 are all used as filter capacitors, and specific connections are shown in FIG. 4.
In this embodiment, the external clock signal is used as positive inputs of the comparator a and the comparator B, and compared with the adjustable reference voltage and the 1V reference voltage corresponding to S2, respectively, the output signals of the two comparators have a certain delay, and then the narrow pulse between the two delays is obtained through the D flip-flop.
Fig. 3 further includes a cathode bias circuit, the cathode bias circuit includes a transistor Q4 and an operational amplifier U4, the transistor Q4 works in a constant current region to form a constant current source controlled by a base current, the operational amplifier U4 generates a bias voltage that can be set so that the semiconductor LASER seed source works in a critical state, and the output of the operational amplifier U4 is connected to a cathode LASER-of the semiconductor LASER seed source.
Also shown in fig. 3 are TP3 and TP4, TP5 and TP6, and multiple sets of test points, which are used for testing only during debug and are not discussed in this patent.
The working principle is as follows:
the whole drive circuit adopts an ultrashort electric pulse generating circuit and a bias excitation drive circuit structure. The transistor Q1 operates in constant current mode as a constant current source connected to the anode of the semiconductor seed.
The MOS transistor Q2 operates in a switching state, and when the switching signal of Q2 is at a high level, the current of the constant current source flows through Q2, and when the switching signal of Q2 is at a low level, the current of the constant current source flows through the semiconductor laser seed source.
The setting of the constant current source current is set by dividing the voltage by an adjustable resistor or by using a DAC, and the driving capability is improved by using an operational amplifier for driving the transistor Q1. The sampling resistor R1 samples the current flowing through the semiconductor laser seed to form negative feedback and stabilize the current.
The pulse width of the switch driving signal of the Q2 is about 1ns, two signals with certain delay are formed by using the delay inside the high-speed comparator, and after the two signals enter the rear-pole D trigger, an ns-level electric pulse width is formed.
The external repetition frequency signal enters the high speed comparator through the connector J2 so that the final pulse signal has the same repetition frequency.
The current flowing through the seed source of the semiconductor laser has a set pulse width and a set repetition frequency, and finally, a laser pulse signal of hundreds of picoseconds is generated under the action mechanism of the gain switch.
In light of the foregoing, it will be apparent to those skilled in the art from this disclosure that various changes and modifications can be made without departing from the scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.
Claims (8)
1. A kind of gain switch semiconductor laser seed source drive circuit, characterized by that: the semiconductor laser comprises a constant current source circuit, a current sampling circuit, a switching signal circuit and a cathode bias circuit, wherein the constant current source circuit is used for providing a working power supply for a semiconductor laser seed source; the current sampling circuit is used for collecting current flowing through a semiconductor laser seed source; the switching signal circuit is used for providing a switching signal for controlling the semiconductor laser seed source signal transmission; the cathode bias circuit is used for enabling the semiconductor laser seed source to work in a critical oscillation state, and when an excitation current is provided outside, relaxation oscillation occurs inside the cathode bias circuit.
2. A gain switched semiconductor laser seed source driver circuit as claimed in claim 1 wherein: constant current source circuit sets for circuit, drive capability amplifier circuit and constant current source device including the constant current source current that connects gradually, constant current source current sets for the size that the circuit is used for setting for the constant current source, drive capability amplifier circuit is used for improving the drive capability, the constant current source device is connected to the positive pole LASER + of semiconductor LASER seed source.
3. A gain switched semiconductor laser seed source driver circuit as claimed in claim 2 wherein: the constant current source current setting circuit is realized by adopting adjustable resistor voltage division or DAC (digital-to-analog converter), the driving capability amplifying circuit is realized by adopting an operational amplifier, the constant current source device adopts a transistor Q1, and the transistor Q1 works in a constant current mode and is connected to an anode LASER + of a semiconductor LASER seed source as a constant current source.
4. A gain switched semiconductor laser seed source driver circuit as claimed in claim 1 wherein: the switching signal circuit comprises an external clock signal input circuit, two paths of reference voltage circuits, two high-speed comparators A and B, D triggers and a switching device, the external clock signal input circuit is connected with the positive input ends of the two high-speed comparators A and B, the two paths of reference voltage circuits are respectively connected with the reverse input ends of the two high-speed comparators A and B, the output ends of the high-speed comparators A and B are connected to the input end of the D trigger, and the output end of the D trigger is connected to the switching device.
5. A gain switched semiconductor laser seed source driver circuit as claimed in claim 4 wherein: also included is a margin protection circuit disposed between the external clock signal input circuit and the positive-going inputs of the two high-speed comparators A and B.
6. A gain switched semiconductor laser seed source driver circuit as claimed in claim 4 wherein: the switching device adopts a MOS tube Q2, the MOS tube Q2 works in a switching state, when a switching signal of the MOS tube Q2 is at a high level, the current of the constant current source device flows through the MOS tube Q2, and when the switching signal of the MOS tube Q2 is at a low level, the current of the constant current source device flows through the semiconductor laser seed source.
7. A gain switched semiconductor laser seed source driver circuit as claimed in claim 1 wherein: the cathode bias circuit comprises a triode Q4 and an operational amplifier U4, the triode Q4 works in a constant current region to form a constant current source controlled by base current, the operational amplifier U4 generates a bias voltage capable of being set, so that the semiconductor LASER seed source works in a critical state, and the output of the operational amplifier U4 is connected to a cathode LASER-of the semiconductor LASER seed source.
8. A gain switched semiconductor laser seed source driver circuit as claimed in claim 1 wherein: the anode voltage detection circuit comprises a connector J1 and a resistor R3, wherein an anode LASER + of the semiconductor LASER seed source is connected to the connector J1 through the resistor R3 and is used for detecting a voltage signal on the anode of the semiconductor LASER seed source during debugging.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021074982.6U CN212485794U (en) | 2020-06-11 | 2020-06-11 | Seed source driving circuit of gain switch semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021074982.6U CN212485794U (en) | 2020-06-11 | 2020-06-11 | Seed source driving circuit of gain switch semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212485794U true CN212485794U (en) | 2021-02-05 |
Family
ID=74417340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021074982.6U Active CN212485794U (en) | 2020-06-11 | 2020-06-11 | Seed source driving circuit of gain switch semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212485794U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113110122A (en) * | 2021-03-10 | 2021-07-13 | 深圳市金锐显数码科技有限公司 | Wireless control circuit and wireless controller |
| CN113904210A (en) * | 2021-10-09 | 2022-01-07 | 深钛智能科技(苏州)有限公司 | Programmable ultrafast pulse laser generator |
| CN114361937A (en) * | 2022-03-18 | 2022-04-15 | 深圳市海创光学有限公司 | Laser driving circuit and laser |
| CN115275758A (en) * | 2022-09-19 | 2022-11-01 | 上海三菲半导体有限公司 | Broadband pulse modulation light source |
-
2020
- 2020-06-11 CN CN202021074982.6U patent/CN212485794U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113110122A (en) * | 2021-03-10 | 2021-07-13 | 深圳市金锐显数码科技有限公司 | Wireless control circuit and wireless controller |
| CN113904210A (en) * | 2021-10-09 | 2022-01-07 | 深钛智能科技(苏州)有限公司 | Programmable ultrafast pulse laser generator |
| CN114361937A (en) * | 2022-03-18 | 2022-04-15 | 深圳市海创光学有限公司 | Laser driving circuit and laser |
| CN115275758A (en) * | 2022-09-19 | 2022-11-01 | 上海三菲半导体有限公司 | Broadband pulse modulation light source |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN212485794U (en) | Seed source driving circuit of gain switch semiconductor laser | |
| CN103296568B (en) | Pulse fiber laser acoustic optical modulator driving power source | |
| CN101588014A (en) | Narrow pulse high-current semiconductor laser device driving circuit | |
| CN103227413A (en) | Semiconductor laser device driving circuit | |
| CN104135253A (en) | Circuit structure of narrow-pulse-width high-repetition-frequency pulse current source | |
| CN115085700B (en) | Solid-state pulse source output waveform delay control device and method | |
| CN112152593A (en) | Drive circuit and laser device | |
| JPH0319384A (en) | Light source drive device | |
| Rao et al. | A high‐voltage solid‐state Marx generator with adjustable pulse edges | |
| JP4532379B2 (en) | Electric pulse generator for semiconductor laser drive | |
| CN111082784A (en) | All-solid-state nanosecond pulse generator based on double-path Marx tangency | |
| US6614214B2 (en) | Sampling element controlled by photoconductive switch-generated sampling pulses and sampling device incorporating same | |
| CN114512886A (en) | Hundred picoseconds high repetition frequency driving signal generating circuit | |
| CN108447241B (en) | Medical equipment signal transmission calibrating device | |
| CN113300208B (en) | Laser output device and laser device | |
| CN113098452B (en) | Ultra-narrow pulse compression device based on triode and step recovery diode | |
| JP7176030B2 (en) | Short pulse generation circuit, short pulse generation method, and sampling oscilloscope using the same | |
| CN114361937B (en) | Laser driving circuit and laser | |
| Casbon et al. | Waveform engineering beyond the safe operating region: Fully active harmonic load pull measurements under pulsed conditions | |
| Oicles et al. | High-power waveform generation using photoconductive switches | |
| CN216819813U (en) | Frequency duty ratio adjustable broadband regulating circuit and electronic equipment | |
| CN113839579B (en) | Pulse driving power supply for LD laser | |
| CN109194309B (en) | Circuit and method for realizing long pulse modulator | |
| Jiang et al. | Design of a High-Peak-Power Ricker Pulse Generator Based on Power Synthesis Method | |
| Su et al. | An Improved Variable Pulse Source Based on Avalanche Transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |