CN212380432U - Photovoltaic cell and photovoltaic module - Google Patents

Abstract

The utility model discloses a photovoltaic cell and photovoltaic module belongs to solar energy technical field. The photovoltaic cell comprises a conductive inner core, a semiconductor substrate, a PN junction structure and a metal reflecting layer; the conductive inner core is arranged in the semiconductor substrate, and the PN junction structure is doped in the semiconductor substrate or on the outer surface of the semiconductor substrate; under the condition that the PN junction structure is doped in the semiconductor substrate, the PN junction structure is contacted with the conductive inner core, and the metal reflecting layer covers the outer surface of the semiconductor substrate; under the condition that the PN junction structure is doped on the outer surface of the semiconductor substrate, the PN junction structure is contacted with the metal reflecting layer, and the metal reflecting layer covers the outer surface of the PN junction structure; the metal reflecting layer is positioned on the backlight side of the PN junction structure. Therefore, after light enters from the light receiving side of the photovoltaic cell and reaches the metal reflecting layer, reflection can be generated inside the photovoltaic cell, the semiconductor substrate can repeatedly absorb the light, and the light absorption efficiency can be improved.

Description

Photovoltaic cell and photovoltaic module

Technical Field

The utility model belongs to the technical field of solar energy, concretely relates to photovoltaic cell and photovoltaic module.

Background

With the continuous development of new energy, solar energy is widely regarded as a renewable resource. Solar cells have also received much attention as a carrier that can directly generate electricity using sunlight.

At present, a solar cell unit comprises a substrate and a photovoltaic cell disposed on the substrate, the photovoltaic cell comprising an electrode, a semiconductor matrix and a transparent conductive layer. The electrode is circumferentially deposited on the substrate, the semiconductor base is circumferentially deposited on the electrode, and the transparent conductive layer is circumferentially deposited on the semiconductor base.

However, in the process of implementing the present invention, the applicant has found that there are at least the following problems in the prior art: the transparent conducting layer is circumferentially deposited on the semiconductor substrate, so that light rays are directly refracted out from the backlight side of the transparent conducting layer after entering the photovoltaic cell from the light receiving side of the transparent conducting layer, and the light absorption efficiency is reduced.

SUMMERY OF THE UTILITY MODEL

The embodiment of the utility model provides a photovoltaic cell and photovoltaic module can solve the not high problem of photovoltaic cell light absorption efficiency.

In order to solve the technical problem, the utility model discloses a realize like this:

in a first aspect, an embodiment of the present invention provides a photovoltaic cell, including a conductive inner core, a semiconductor substrate, a PN junction structure, and a metal reflective layer;

the conductive inner core is arranged in the semiconductor substrate, and the PN junction structure is doped in the semiconductor substrate or on the outer surface of the semiconductor substrate;

under the condition that the PN junction structure is doped in the semiconductor substrate, the PN junction structure is contacted with the conductive inner core, and the metal reflecting layer covers the outer surface of the semiconductor substrate;

under the condition that the PN junction structure is doped on the outer surface of the semiconductor substrate, the PN junction structure is in contact with the metal reflecting layer, and the metal reflecting layer covers the outer surface of the PN junction structure;

the metal reflecting layer is located the side is shaded to photovoltaic cell, wherein, light passes through PN junction structure shines under the condition of metal reflecting layer, light is in take place to reflect on the metal reflecting layer.

Optionally, the photovoltaic cell further comprises a passivation antireflection film;

under the condition that the PN junction structure is doped on the outer surface of the semiconductor substrate, the passivation antireflection film covers the outer surface of the light receiving side of the PN junction structure;

in the case where the PN junction structure is doped in the inside of the semiconductor base body, the passivation antireflection film is covered on the outer surface of the light receiving side of the semiconductor base body.

Optionally, the semiconductor substrate is cylindrical, and the metal reflective layer is an arc-shaped metal reflective layer.

Optionally, a central angle of the arc-shaped metal reflecting layer is less than or equal to 180 °.

Optionally, the conductive inner core is a positive electrode, and the metal reflective layer is a negative electrode.

Optionally, the conductive inner core is a negative electrode, and the metal reflective layer is a positive electrode.

Optionally, the photovoltaic module comprises the photovoltaic cell of any one of the first aspect of the substrate;

the backlight side of the photovoltaic cells is fixed on the substrate, and the photovoltaic cells are electrically connected with the substrate.

In a second aspect, an embodiment of the present invention further provides a photovoltaic module, where the photovoltaic module includes a substrate and the photovoltaic cell described in any of the embodiments of the first aspect;

the backlight side of the photovoltaic cells is fixed on the substrate, and the photovoltaic cells are electrically connected with the substrate.

Optionally, the substrate includes a back plate and a conductive layer;

conductive electrodes are arranged at two ends of the back plate, and two ends of the conductive inner core are respectively in contact with the conductive electrodes;

the conducting layer is arranged on the back plate, and the metal reflecting layer is fixed on the conducting layer.

Optionally, the photovoltaic module comprises a single-layer cell module or a multi-layer cell module;

under the condition that the photovoltaic assembly comprises a single-layer cell module, the single-layer cell module comprises a plurality of photovoltaic cells which are arranged in parallel in a first direction, wherein the first direction is a direction intersecting with the length direction of the photovoltaic cells;

under the condition that the photovoltaic module comprises a plurality of layers of cell modules, each layer of cell module comprises a plurality of photovoltaic cells which are arranged in parallel, and the plurality of layers of cell modules comprise a plurality of photovoltaic cells which are stacked in a second direction, wherein the second direction is perpendicular to the first direction.

Optionally, the photovoltaic cells are linear silicon-based cells, and the semiconductor substrate included in each photovoltaic cell is a silicon substrate.

According to the photovoltaic cell provided by the embodiment of the utility model, the photovoltaic cell comprises a conductive inner core, a semiconductor substrate, a PN junction structure and a metal reflecting layer; the conductive inner core is arranged in the semiconductor substrate, and the PN junction structure is doped in the semiconductor substrate or on the outer surface of the semiconductor substrate; under the condition that the PN junction structure is doped in the semiconductor base body, the PN junction structure is in contact with the conductive inner core, the metal reflecting layer covers the outer surface of the semiconductor base body, under the condition that the PN junction structure is doped in the outer surface of the semiconductor base body, the PN junction structure is in contact with the metal reflecting layer, the metal reflecting layer covers the outer surface of the PN junction structure, the metal reflecting layer is located on the backlight side of the photovoltaic cell, and under the condition that light irradiates the metal reflecting layer through the PN junction structure, the light is reflected on the metal reflecting layer. Therefore, the metal reflecting layer is positioned on the backlight side of the photovoltaic cell, so that after light enters from the light receiving side of the photovoltaic cell and reaches the metal reflecting layer, reflection can be generated inside the photovoltaic cell, the reflected light can perform photoelectric conversion reaction with the semiconductor substrate again, the semiconductor substrate can repeatedly absorb the light, and the light absorption efficiency can be improved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive labor.

Fig. 1 is a schematic structural diagram of a photovoltaic cell provided in an embodiment of the present invention;

fig. 2 is a schematic structural diagram of another photovoltaic cell provided in an embodiment of the present invention;

fig. 3 is a schematic diagram of a central angle position of an arc-shaped metal reflective layer according to an embodiment of the present invention;

fig. 4 is a schematic structural diagram of a photovoltaic module according to an embodiment of the present invention;

fig. 5 is a schematic structural diagram of another photovoltaic module according to an embodiment of the present invention.

Reference numerals

1-a photovoltaic cell; 2-a substrate; 3-a conductive resin; 11-a conductive inner core; 12-a semiconductor substrate; a 13-PN junction structure; 14-a metal reflective layer; 15-passivating the antireflective film; 21-a back plate; 22-conductive layer.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, of the embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.

The terms "first," "second," and the like in the description and in the claims, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention may be practiced in sequences other than those illustrated or described herein. In addition, "and/or" in the specification and claims means at least one of connected objects, a character "/" generally means that a preceding and succeeding related objects are in an "or" relationship.

The embodiments of the present invention provide a photovoltaic cell and a photovoltaic module, which are described in detail below with reference to the accompanying drawings. Fig. 1 is a schematic structural diagram of a photovoltaic cell provided in an embodiment of the present invention, and fig. 2 is a schematic structural diagram of another photovoltaic cell provided in an embodiment of the present invention; as shown in fig. 1 to 2, the photovoltaic cell includes a conductive core 11, a semiconductor substrate 12, a PN junction structure 13, and a metal reflective layer 14; the conductive inner core 11 is arranged inside the semiconductor base body 12, and the PN junction structure 13 is doped inside or on the outer surface of the semiconductor base body 12; under the condition that the PN junction structure 13 is doped in the semiconductor base body 12, the PN junction structure 13 is contacted with the conductive inner core 11, the metal reflecting layer 14 covers the outer surface of the semiconductor base body 12, under the condition that the PN junction structure 13 is doped in the outer surface of the semiconductor base body 12, the PN junction structure 13 is contacted with the metal reflecting layer 14, and the metal reflecting layer 14 covers the outer surface of the PN junction structure 13; the fixed positions of the metal reflective layer 14 and the PN junction structure 13 are located on the backlight side of the photovoltaic cell, wherein in the case where light is irradiated to the metal reflective layer 14 through the PN junction structure, the light is reflected on the metal reflective layer 14.

Wherein, photovoltaic cell can be one kind of solar cell unit, like silicon-based solar cell, sensitization nanocrystalline solar cell, organic compound solar cell, plastics solar cell, inorganic compound semiconductor solar cell etc. the embodiment of the utility model provides a do not restrict to this.

The conductive inner core 11 is positioned inside the photovoltaic cell and mainly plays a role in conducting electricity. Specifically, if the photovoltaic cell is P-type, the conductive core 11 can be used as a positive electrode of the photovoltaic cell. If the photovoltaic cell is N-type, the conductive core 11 may serve as the negative electrode of the photovoltaic cell. The semiconductor body 12 is a photovoltaic cell body, and the semiconductor body 12 is doped with a solar-grade semiconductor material, such as monocrystalline silicon, polycrystalline silicon, an inorganic compound, and other semiconductor materials.

It should be noted that, because the conductive inner core 11 is located inside the photovoltaic cell, the conductive inner core 11 does not shield the outside light entering the inside of the photovoltaic cell, and the utilization rate of the photovoltaic cell to the light can be improved.

Secondly, the PN junction structure 13 mainly provides a PN junction for the photovoltaic cell, and the PN junction structure 13 may be doped inside the semiconductor substrate 12 or on the outer surface of the semiconductor substrate 12. As shown in fig. 2, in the case where the PN junction structure 13 is doped in the inside of the semiconductor base 12, the PN junction structure 13 is in contact with the conductive core 11, and the metal reflective layer 14 is coated on the outer surface of the semiconductor base 12, as shown in fig. 1, in the case where the PN junction structure 13 is doped in the outer surface of the semiconductor base 12, the PN junction structure 13 is in contact with the metal reflective layer 14, and the metal reflective layer 14 is coated on the outer surface of the PN junction structure 13. Specifically, if the photovoltaic cell is P-type, the PN junction structure 13 is N-type, and the doping impurities may be phosphorus, arsenic, antimony, or the like. If the photovoltaic cell is N-type, the PN junction structure 13 is P-type, and the doping impurities may be boron or indium. If the photovoltaic cell is P-type, the metal reflective layer 14 may serve as the negative electrode of the photovoltaic cell. If the photovoltaic cell is of an N-type, the metal reflective layer 14 can be used as a positive electrode of the photovoltaic cell, which is not limited by the present invention.

It should be noted that, when the photovoltaic cell is installed, one side of the photovoltaic cell is fixed on the substrate of the photovoltaic module, and the side fixed on the substrate of the photovoltaic module is the backlight side of the photovoltaic cell, and light enters the cell from the side of the photovoltaic cell far away from the substrate. As shown in fig. 2, in the case where the PN junction structure 13 is doped in the semiconductor base 12, the backlight side of the photovoltaic cell is the side of the semiconductor base 12 close to the substrate, the a side of the semiconductor base 12 is the light-receiving side of the photovoltaic cell, and the B side of the semiconductor base 12 is the backlight side of the photovoltaic cell. As shown in fig. 1, in the case where the PN junction structure 13 is doped on the outer surface of the semiconductor base 12, the a side of the PN junction structure 13 is the light receiving side of the photovoltaic cell, and the B side of the PN junction structure 13 is the backlight side of the photovoltaic cell. Therefore, under the condition that the fixed positions of the metal reflecting layer 14 and the PN junction structure 13 are positioned on the backlight side of the PN junction structure 13, the metal reflecting layer 14 cannot shield light rays entering the battery, and the light utilization rate of the photovoltaic battery is further improved. In addition, the PN junction structure can be single-layer PN junction structure, also can be the PN junction of multilayer syntropy, the embodiment of the utility model provides a do not restrict to this.

It should be noted that each of the conductive core 11 and the metal reflective layer 14 may be independently a metal or an alloy with high conductivity, such as silver, copper, aluminum, or gold, and further, the current generated by the semiconductor substrate 12 may be conducted to the outside through the conductive core 11 and the metal reflective layer 14. In addition, electrically conductive inner core 11 can be metal wire or metal pipe, and metal reflection stratum 14 also can be metal wire or metal pipe, or other shapes to the different installation environment of adaptation photovoltaic cell, the utility model discloses do not restrict this.

In addition, taking the case where the PN junction structure 13 is doped on the outer surface of the semiconductor base 12 as an example, as shown in fig. 1, the surface on the back light side of the PN junction structure 13 is the surface on the side close to the substrate, and light is irradiated into the photovoltaic cell from the direction perpendicular to the light receiving side of the PN junction structure 13, thereby forming the back light side of the PN junction structure 13 at the connecting portion between the photovoltaic cell and the substrate. The metal reflective layer 14 may be one of metals having high reflectivity and good electrical conductivity, such as silver, copper, aluminum, and gold. When light enters from the light receiving side of the PN junction structure 13 and reaches the metal reflective layer 14 through the semiconductor base 12, the light can be reflected on the metal reflective layer 14. In this way, the reflected light may pass through the semiconductor body 12 again for the photoelectric conversion reaction, so that the semiconductor body 12 may repeat the absorption of the light.

As can be seen from the above embodiments, in the embodiment of the present invention, the photovoltaic cell includes a conductive core 11, a semiconductor substrate 12, a PN junction structure 13, and a metal reflective layer 14; the conductive core 11 is disposed inside the semiconductor base 12, the metal reflective layer 14 is fixed on the outer surface of the semiconductor base 12 or the PN junction structure 13, and the metal reflective layer 14 is located on the backlight side of the photovoltaic cell, wherein in the case where light is irradiated to the metal reflective layer 14 through the PN junction structure, the light is reflected on the metal reflective layer 14. In this way, since the metal reflective layer 14 is located on the backlight side of the photovoltaic cell, after light enters from the light receiving side of the photovoltaic cell and reaches the metal reflective layer 14, reflection can be generated inside the photovoltaic cell, and the reflected light can perform photoelectric conversion reaction with the semiconductor substrate 12 again, so that the semiconductor substrate 12 can repeatedly absorb the light, and further, the light absorption efficiency can be improved.

Optionally, the photovoltaic cell further comprises a passivated antireflective film 15; as shown in fig. 1, in the case where the PN junction structure 13 is doped on the outer surface of the semiconductor base body 12, the passivation antireflection film 15 covers the outer surface of the PN junction structure 13 on the light receiving side; as shown in fig. 2, in the case where the PN junction structure 13 is doped in the inside of the semiconductor base body 12, the passivation antireflection film 15 is covered on the outer surface of the light receiving side of the semiconductor base body 12.

Specifically, the passivation anti-reflection film 15 may be any one of a single layer or a multilayer film of silicon nitride, silicon oxynitride, silicon oxide, aluminum oxide, and the like, and since the passivation anti-reflection film 15 has a certain strength and a low surface reflectivity, when the passivation anti-reflection film 15 covers the outer surface of the PN junction structure 13, on one hand, the passivation anti-reflection film can protect the outer surface of the photovoltaic cell, thereby reducing the damage rate of the outer surface of the photovoltaic cell and prolonging the service life of the photovoltaic cell. On the other hand, the reflectivity of the outer surface of the PN junction structure 13 can be reduced, the light absorption rate is improved, and the productivity and efficiency of the photovoltaic cell are further improved. In addition, in the present invention, in the case where the PN junction structure 13 is doped on the outer surface of the semiconductor substrate 12, the passivation anti-reflection film 15 covers the outer surface of the PN junction structure 13 on the light receiving side, where the outer surface of the PN junction structure 13 on the light receiving side is the surface on which the side a in fig. 1 is located. In the case where the PN junction structure 13 is doped in the semiconductor base body 12, the passivation antireflection film 15 covers the outer surface of the semiconductor base body 12 on the light receiving side, which is the surface on the a side in fig. 2.

Alternatively, as shown in fig. 1, the semiconductor substrate 12 is cylindrical, and the metal reflective layer 14 is an arc-shaped metal reflective layer.

Specifically, under the condition that the semiconductor substrate 12 is cylindrical and the metal reflective layer 14 is arc-shaped metal reflective, the photovoltaic cells are linear photovoltaic cells, so that on one hand, each photovoltaic cell can be bent in the length direction, the photovoltaic cells can be mounted on any mounting surface, and further, the application scene of the photovoltaic cells is not limited. On the other hand, each photovoltaic cell is a linear photovoltaic cell and can be formed by wire drawing, so that the material loss in the raw material processing stage can be reduced, and the production cost of the photovoltaic cell is further reduced. In addition, in the case where the PN junction structure 13 is doped on the outer surface of the semiconductor base body 12, the PN junction structure 13 is a circular thin film, and the PN junction structure 13 is covered on the outer surface of the semiconductor base body 12.

It should be noted that, since the metal reflective layer 14 is arc-shaped and is located on the backlight side of the PN junction structure 13, the metal reflective layer 14 can also maximally extend the reflection path of the light while ensuring the light passing rate, which is beneficial to improving the light absorption efficiency.

It should be further noted that the conductive inner core can be a metal wire, and then can be directly electrically connected with the substrate through the metal wire, and the metal wire can be bent at will, so that the connection between the photovoltaic cell and the substrate is more convenient. In addition, in order to reduce the overall weight of the photovoltaic module, the conductive inner core 11 may be a metal conduit, and while reducing the overall weight, the conductive inner core may also be directly electrically connected to the substrate through the metal conduit.

Optionally, a central angle of the arc-shaped metal reflecting layer is less than or equal to 180 °.

Specifically, as shown in fig. 3, in the case that the metal reflective layer 14 is an arc-shaped metal reflective layer, a central angle α of the arc-shaped metal reflective layer is less than or equal to 180 °, exemplary α may be 180 °, 170 °, and 160 ° … …, and the central angle α of the arc-shaped metal reflective layer is determined according to the incident angle of light and the installation process of the metal reflective layer 14. Like this for the central angle alpha of arc metal reflection stratum has multiple specification, consequently, makes the utility model discloses the photovoltaic cell that provides can use under arbitrary illumination environment. Preferably, in the embodiment of the present invention, the central angle α is in an angle range of 60 ° to 180 °, so as to ensure that the arc-shaped metal reflective layer has a large reflective area, further prolong the reflective path of light, and facilitate improvement of light absorption efficiency.

Optionally, the conductive core 11 is a positive electrode, and the metal reflective layer 14 is a negative electrode.

Specifically, if the photovoltaic cell is a P-type photovoltaic cell, the conductive core 11 may be a positive electrode of the photovoltaic cell, the PN junction structure 13 is an N-type photovoltaic cell, the impurity dopant may be phosphorus, arsenic, antimony, or the like, and the metal reflective layer 14 is a negative electrode. In this way, when connected to the substrate, the metal reflective layer 14 and the conductive layer 12 of the plurality of photovoltaic cells constitute the negative electrode of the photovoltaic module, and the conductive core 11 and the conductive electrode of the plurality of photovoltaic cells constitute the positive electrode of the photovoltaic module.

Optionally, the conductive core 11 is a negative electrode, and the metal reflective layer 14 is a positive electrode.

Specifically, if the photovoltaic cell is N-type, the conductive core 11 may be used as a negative electrode of the photovoltaic cell, the PN junction structure 13 is P-type, the doping impurities may be boron or indium, and the metal reflective layer 14 is a positive electrode. In this way, when connected to the substrate, the metal reflective layer 14 and the conductive layer 12 of the plurality of photovoltaic cells constitute the positive electrode of the photovoltaic module, and the conductive core 11 and the conductive electrode of the plurality of photovoltaic cells constitute the negative electrode of the photovoltaic module. In addition, it should be noted that, above-mentioned two kinds of implementation modes only do the utility model discloses a two preferred embodiments can arrange N type silicon and P type silicon on the photovoltaic module's of the utility model provides a base plate, the embodiment of the utility model is not restricted to this.

As can be seen from the above embodiments, in the embodiment of the present invention, the photovoltaic cell includes a conductive core 11, a semiconductor substrate 12, a PN junction structure 13, and a metal reflective layer 14; the conductive inner core 11 is arranged inside the semiconductor base body 12, and the PN junction structure 13 is doped inside or on the outer surface of the semiconductor base body 12; under the condition that the PN junction structure 13 is doped in the semiconductor base body 12, the PN junction structure 13 is contacted with the conductive inner core 11, the metal reflecting layer 14 covers the outer surface of the semiconductor base body 12, under the condition that the PN junction structure 13 is doped in the outer surface of the semiconductor base body 12, the PN junction structure 13 is contacted with the metal reflecting layer 14, and the metal reflecting layer 14 covers the outer surface of the PN junction structure 13; the fixed positions of the metal reflective layer 14 and the PN junction structure 13 are located on the backlight side of the photovoltaic cell, wherein in the case where light is irradiated to the metal reflective layer 14 through the PN junction structure, the light is reflected on the metal reflective layer 14. In this way, since the metal reflective layer 14 is located on the backlight side of the photovoltaic cell, after light enters from the light receiving side of the photovoltaic cell and reaches the metal reflective layer 14, reflection can be generated inside the photovoltaic cell, and the reflected light can perform photoelectric conversion reaction with the semiconductor substrate 12 again, so that the semiconductor substrate 12 can repeatedly absorb the light, and further, the light absorption efficiency can be improved.

Besides, metal reflecting layer 14 can be the arc reflecting layer, and the central angle of arc metal reflecting layer is less than or equal to 180, like this for the central angle alpha of arc metal reflecting layer has multiple specification, consequently, makes the utility model discloses the photovoltaic cell who provides can use under arbitrary illumination environment.

In a second aspect, fig. 4 is a schematic structural diagram of a photovoltaic module according to an embodiment of the present invention, the schematic structural diagram is a schematic diagram of a direction perpendicular to a surface of the photovoltaic module, as shown in fig. 4, the photovoltaic module includes a substrate 2 and the photovoltaic cell 1 according to any embodiment of the first aspect; the backlight side of the plurality of photovoltaic cells 1 is fixed on the substrate 2, and the plurality of photovoltaic cells 1 are electrically connected to the substrate 2.

The photovoltaic cell 1 may include a light receiving side and a backlight side, the light receiving side of the photovoltaic cell 1 is a surface far from the substrate 2, and the backlight side of the photovoltaic cell 1 is a surface close to the substrate 2. The backlight side of the photovoltaic cell 1 is fixed on the substrate 2. Specifically, a plurality of photovoltaic cell 1 can be evenly arranged along the width direction of base plate 2, also can be arranged along the width direction of base plate 2 is irregular, perhaps, a plurality of photovoltaic cell 1 also can be arranged along the direction on perpendicular to base plate 2's surface three-dimensionally, and the mode of specifically arranging is confirmed according to processing technology's production demand, the embodiment of the utility model provides a do not limit to this.

It should be noted that the number of the photovoltaic cells 1 included in the photovoltaic module is determined according to the overall output efficiency of the photovoltaic module, and the output efficiency of the photovoltaic module can be dynamically adjusted by increasing or decreasing the number of the photovoltaic cells 1 included in the photovoltaic module, so that the energy loss caused by too many or too few photovoltaic cells 1 is reduced.

In addition, the backlight side of the plurality of photovoltaic cells 1 may be bonded to the substrate 2 by soldering or conductive resin, or in other ways, so that the generated electricity of the photovoltaic cells 1 may be transmitted to the outside through the substrate 2, thereby realizing the power supply performance of the photovoltaic module.

As can be seen from the above embodiments, in the embodiment of the present invention, the photovoltaic module includes a substrate 2 and a plurality of photovoltaic cells 1; each photovoltaic cell 1 is a linear cell, the backlight side of the plurality of photovoltaic cells 1 is fixed on the substrate 2, and the plurality of photovoltaic cells 1 are electrically connected to the substrate 2. On one hand, each photovoltaic cell 1 is a linear cell, so that each photovoltaic cell 1 can be bent in the length direction, the photovoltaic module can be installed on any installation surface, and the application scene of the photovoltaic module is not limited. On the other hand, each photovoltaic cell 1 is a linear cell and can be formed by wire drawing, so that the material loss in the raw material processing stage can be reduced, and the production cost of the photovoltaic module is further reduced.

Alternatively, as shown in fig. 5, the substrate 2 includes a back plate 21 and a conductive layer 22; conductive electrodes are arranged at two ends of the back plate 21, and two ends of the conductive inner core 11 are respectively contacted with the conductive electrodes; the conductive layer 22 is disposed on the back plate 21, and the metal reflective layer 14 is fixed on the conductive layer 22.

Specifically, fig. 5 is a schematic structural diagram of another photovoltaic module provided by the embodiment of the present invention, and the direction of the view is consistent with the length direction of the photovoltaic module. The back plate 21 is a supporting body of the photovoltaic module, and the back plate 21 may be made of a material with a certain strength, such as glass, a rubber material or an alloy material, so that the photovoltaic module has a certain strength and toughness, and is further adapted to different application scenarios of the photovoltaic module. In addition, one or more conductive layers 22 are bonded or welded on the back sheet 21, the conductive layer 22 may be any metal or alloy material with good conductivity, and the metal reflective layer 14 may be fixed on the conductive layer 22 by welding or conductive resin bonding, so that the metal reflective layers 14 of the plurality of photovoltaic cells 1 are all in contact with the conductive layer 22, and further jointly form a positive electrode or a negative electrode of the photovoltaic module. It should be noted that, when the metal reflective layer 14 is adhered to the conductive layer 22 through the conductive resin 3, since the conductive resin 3 has a certain ductility, the conductive resin 3 can be filled in the gap between the metal reflective layer 14 and the conductive layer 22, which is more beneficial for fixing the photovoltaic cell 1. Specifically, if the photovoltaic cell 1 is of the P-type, the metal reflective layer 14 and the conductive layer 22 of the plurality of photovoltaic cells 1 constitute a negative electrode of the photovoltaic module. If the photovoltaic cell 1 is of the N-type, the metal reflective layer 14 and the conductive layer 22 of the plurality of photovoltaic cells 1 constitute the positive electrode of the photovoltaic module.

In addition, two ends of the conductive cores 11 of the plurality of photovoltaic cells 1 are respectively provided with conductive electrode contacts with two ends of the back plate 21, taking the conductive core 11 of one photovoltaic cell 1 as an example, the conductive core 11 may extend from two ends of the photovoltaic cell 1, one end of the conductive core 11 and the conductive electrode of the first edge of the back plate 21 are fixed by welding or conductive resin, the other end of the conductive core 11 and the conductive electrode of the second edge of the back plate 21 are fixed by welding or conductive resin, wherein the first edge and the second edge are two opposite edges in the length direction of the back plate 21. In this way, the conductive cores 11 of the plurality of photovoltaic cells 1 are all in contact with the conductive electrodes, and then jointly form the positive electrode or the negative electrode of the photovoltaic module. Specifically, if the photovoltaic cell 1 is P-type, the conductive cores 11 and the conductive electrodes of the plurality of photovoltaic cells 1 constitute a positive electrode of the photovoltaic module. If the photovoltaic cells 1 are N-type, the conductive cores 11 and the conductive electrodes of the plurality of photovoltaic cells 1 constitute negative electrodes of the photovoltaic module.

Optionally, as shown in fig. 5, the photovoltaic module includes a single-layer cell module or a multi-layer cell module; under the condition that the photovoltaic assembly comprises a single-layer cell module, the single-layer cell module comprises a plurality of photovoltaic cells 1 which are arranged in parallel in a first direction, wherein the first direction is a direction intersecting with the length direction of the photovoltaic cells 1; under the condition that photovoltaic module includes the multilayer battery piece module, every layer battery piece module all includes a plurality of photovoltaic cell 1 that set up side by side, and the multilayer battery piece module includes a plurality of photovoltaic cell 1 that stack along the second direction, and wherein, the second direction is the direction perpendicular with first direction.

The photovoltaic module may be formed of a single layer of photovoltaic cells 1, or may be formed of a plurality of layers of photovoltaic cells 1. Specifically, in the case where the photovoltaic module is constituted by a single-layer photovoltaic cell 1, the photovoltaic module includes a single-layer cell sheet module. In the case where the photovoltaic module is constituted by a plurality of layers of photovoltaic cells 1, the photovoltaic module includes a plurality of layers of cell sheet modules. Further, in the case where the photovoltaic module includes a single-layer cell module, the plurality of photovoltaic cells 1 may be tiled on the substrate 2 in the first direction. In the case where the photovoltaic module includes a multilayer cell module, a plurality of photovoltaic cells 1 may be stacked on the substrate 2 in the second direction. The number of piles of photovoltaic cell 1 of multilayer battery piece module is confirmed by processing technology and production demand, the utility model discloses do not limit to this. The first direction is the same as the direction shown by the X direction in fig. 5, and the second direction is the same as the direction shown by the Y direction in fig. 5.

Alternatively, the photovoltaic cells 1 are linear silicon-based cells, each comprising a semiconductor substrate that is a silicon substrate.

It should be noted that the linear silicon-based battery may be formed by wire drawing, and thus, the loss of raw material at the raw material processing stage may be reduced. Under the condition that the cross section of the linear silicon-based battery is circular, the diameter of the linear silicon-based battery can be any value between 50 mu m and 1000 mu m, and the embodiment of the utility model does not limit the diameter. Compared with a crystalline silicon wafer, under the condition that the photovoltaic cell 1 is a linear silicon-based cell, the linear structure has a large adjustment space in length, and the adjustment mode is simple, so that the overall size of the photovoltaic module can be adjusted according to the processing and actual requirements.

It should be further noted that, because each photovoltaic cell 1 is a linear cell, when the photovoltaic cell 1 reaches a preset value, the cell can be bent, so that the bending resistance degree of each photovoltaic cell 1 is increased, and in the case that the substrate 2 is also made of a flexible material, the photovoltaic module can be a flexible module, so that the photovoltaic module can be installed on any installation surface, and further, the application scene of the photovoltaic module is not limited.

As can be seen from the above embodiments, in the embodiment of the present invention, the photovoltaic module includes the substrate 2 and the photovoltaic cell 1 described in any one of the embodiments of the first aspect; the backlight side of the plurality of photovoltaic cells 1 is fixed on the substrate 2, and the plurality of photovoltaic cells 1 are electrically connected to the substrate 2. Thus, with the improvement of the light absorption efficiency of each photovoltaic cell 1, the overall light absorption efficiency of the photovoltaic module is also improved, and the productivity efficiency of the photovoltaic module is further improved. In addition, the photovoltaic cell 1 includes the metal reflective layer 14, so that, after light enters from the light receiving side of the photovoltaic cell and reaches the metal reflective layer 241, reflection can be generated inside the photovoltaic cell 1, thereby further improving light absorption efficiency.

It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element. Furthermore, it should be noted that the scope of the apparatus of the embodiments of the present invention is not limited to performing functions in the order illustrated or discussed, but may include performing functions in a substantially simultaneous manner or in a reverse order based on the functions involved, e.g., the methods described may be performed in an order different than that described, and various steps may be added, omitted, or combined. In addition, features described with reference to certain examples may be combined in other examples.

The embodiments of the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the above-mentioned embodiments, which are only illustrative and not restrictive, and those skilled in the art can make many forms without departing from the spirit and scope of the present invention.

Claims (10)

1. A photovoltaic cell is characterized by comprising a conductive inner core, a semiconductor substrate, a PN junction structure and a metal reflecting layer;

the conductive inner core is arranged in the semiconductor substrate, and the PN junction structure is doped in the semiconductor substrate or on the outer surface of the semiconductor substrate;

under the condition that the PN junction structure is doped in the semiconductor substrate, the PN junction structure is contacted with the conductive inner core, and the metal reflecting layer covers the outer surface of the semiconductor substrate;

under the condition that the PN junction structure is doped on the outer surface of the semiconductor substrate, the PN junction structure is in contact with the metal reflecting layer, and the metal reflecting layer covers the outer surface of the PN junction structure;

the metal reflecting layer is located the side is shaded to photovoltaic cell, wherein, light passes through PN junction structure shines under the condition of metal reflecting layer, light is in take place to reflect on the metal reflecting layer.

2. The photovoltaic cell of claim 1, further comprising a passivating antireflective film;

under the condition that the PN junction structure is doped on the outer surface of the semiconductor substrate, the passivation antireflection film covers the outer surface of the light receiving side of the PN junction structure;

in the case where the PN junction structure is doped in the inside of the semiconductor base body, the passivation antireflection film is covered on the outer surface of the light receiving side of the semiconductor base body.

3. The photovoltaic cell of claim 1, wherein the semiconductor substrate is cylindrical and the metal reflective layer is an arcuate metal reflective layer.

4. The photovoltaic cell of claim 3, wherein the arc-shaped metal reflective layer has a central angle of less than or equal to 180 °.

5. The photovoltaic cell of claim 1, wherein the conductive core is a positive electrode and the metal reflective layer is a negative electrode.

6. The photovoltaic cell of claim 1, wherein the conductive core is a negative electrode and the metal reflective layer is a positive electrode.

7. A photovoltaic module comprising a substrate and a photovoltaic cell according to any one of claims 1 to 6;

the backlight side of the photovoltaic cells is fixed on the substrate, and the photovoltaic cells are electrically connected with the substrate.

8. The photovoltaic module of claim 7, wherein the substrate comprises a backsheet and a conductive layer;

conductive electrodes are arranged at two ends of the back plate, and two ends of the conductive inner core are respectively contacted with the conductive electrodes;

the conducting layer is arranged on the back plate, and the metal reflecting layer is fixed on the conducting layer.

9. The photovoltaic module of claim 7, wherein the photovoltaic module comprises a single-layer cell module or a multi-layer cell module;

under the condition that the photovoltaic assembly comprises a single-layer cell module, the single-layer cell module comprises a plurality of photovoltaic cells which are arranged in parallel in a first direction, wherein the first direction is a direction intersecting with the length direction of the photovoltaic cells;

under the condition that the photovoltaic module comprises a plurality of layers of cell modules, each layer of cell module comprises a plurality of photovoltaic cells which are arranged in parallel, and the plurality of layers of cell modules comprise a plurality of photovoltaic cells which are stacked in a second direction, wherein the second direction is perpendicular to the first direction.

10. The assembly according to claim 7, wherein the photovoltaic cells are linear silicon-based cells, each of the photovoltaic cells comprising a semiconductor substrate that is a silicon substrate.

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