CN212343746U

CN212343746U - Photoetching quartz wafer for improving falling strength

Info

Publication number: CN212343746U
Application number: CN202021568770.3U
Authority: CN
Inventors: 张贞龙; 孙晓明; 张小伟; 詹超
Original assignee: Taijing Technology Co Ltd
Current assignee: Taijing Technology Co Ltd
Priority date: 2020-08-02
Filing date: 2020-08-02
Publication date: 2021-01-12
Anticipated expiration: 2030-08-02

Abstract

The utility model provides a promote quartzy wafer of photoetching of falling intensity, includes quartzy wafer, upper electrode and bottom electrode, be provided with on the quartzy wafer with the inside pad fixed connection's of base welding end, its characterized in that: the edge of the welding end is provided with an edge semi-through hole penetrating through the quartz wafer, and the top surface and the bottom surface of the welding end are provided with at least two mutually symmetrical grooves. The utility model discloses simple structure, fixed effectual, the effective resistance of wafer fall impact.

Description

Photoetching quartz wafer for improving falling strength

Technical Field

The utility model relates to an electronic components field, concretely relates to promote quartzy wafer of photoetching of falling intensity.

Background

With the development of communication technology, electronic products are developed towards miniaturization and high integration, especially products such as smart phones and smart wearing have smaller and smaller sizes, and electronic devices also need to be miniaturized and thinned. As a key device in the technical field of communication, the quartz crystal resonator has smaller and smaller packaging size of an oscillator, in order to improve the running speed and the communication speed of an electronic system, the oscillation frequency of a quartz crystal wafer is greatly increased, the wafer frequency is increased and the wafer is thinner and thinner due to the inverse relation between the wafer frequency and the thickness, and the wafer process adopts a semiconductor photoetching process to realize miniaturization and thinning. Since the quartz crystal wafer is made of quartz crystal material, the quartz crystal wafer is brittle material, and portable electronic products such as mobile phones and the like are easy to fall off, which can cause the wafer to fall off. According to the invention, through the structural design of the welding part of the photoetching wafer, the mechanical strength of the connection between the wafer and the ceramic base is enhanced, and the aims of vibration resistance and drop resistance are achieved.

Disclosure of Invention

The utility model aims at overcoming the shortcoming and not enough of prior art, provide a simple structure, the fixed effectual photoetching quartz wafer that can effectively resist and fall the impact of wafer.

In order to achieve the above purpose, the technical solution of the utility model is that: the utility model provides a promote quartzy wafer of photoetching of falling intensity, includes quartzy wafer, upper electrode and bottom electrode, be provided with on the quartzy wafer with the inside pad fixed connection's of base welding end, its characterized in that: the edge of the welding end is provided with an edge semi-through hole penetrating through the quartz wafer, and the top surface and the bottom surface of the welding end are provided with at least two mutually symmetrical grooves.

The number of the grooves is six, two of the grooves are located at the edge of the quartz wafer, and the other four grooves are located on the inner side of the quartz wafer.

The three grooves on the top surface of the welding end and the orifices of the semi-through holes on the edges are respectively positioned at four corners of the top surface of the welding end.

Compared with the prior art, the beneficial effects of the utility model are that:

1. the utility model discloses a set up marginal half through-hole and a plurality of recess on quartz wafer and promote the firm in connection degree of quartz wafer and pad, wherein the electrically conductive gluey post in the marginal half through-hole can form the structure of similar rivet, and the electrically conductive gluey post in the recess of symmetrical arrangement can form the structure of similar tooth interlock, thereby increases wafer and electrically conductive adhesive's area of contact, and forms mechanical interlocking power, reaches and increases electrically conductive adhesive to the cohesive strength of wafer, the anti drop performance of reinforcing. Such structural design also makes the contact surface of quartz chip and outside colloid wider, can be better even as an organic whole with the outside, and quartz chip also can be more stable fix on the pad, can effectively resist and fall the impact.

2. The utility model discloses the position of marginal half through-hole and recess on the welding end has been injectd, distributes in the gluey post in welding end four corners and can let the whole plane of welding end can both receive the influence of gluing the post, and fixed effect further promotes.

3. The edge half through hole and the groove on the welding end are formed by adopting a photoetching process method, specifically photoresist coating, photoetching pattern transfer and wet etching are carried out to corrode the quartz wafer, and the designed edge half through hole and the designed welding surface are provided with vertically symmetrical grooves. The precision processing of the photoetching process can effectively ensure the dimensional precision and consistency of the corroded shape.

Drawings

Fig. 1 is a schematic structural diagram of the present invention.

FIG. 2 is a schematic view of the structure of the present invention in which a quartz wafer is mounted in a susceptor.

Fig. 3 is a cross-sectional view of the connection surface between the quartz wafer and the bonding pad according to the present invention.

In the figure: the device comprises a base 1, a quartz wafer 2, an upper electrode 21, an upper connecting arm 211, a lower electrode 22, a lower connecting arm 221, a bonding pad 3, a welding terminal 4, an edge half through hole 5 and a groove 6.

Detailed Description

The present invention will be described in further detail with reference to the following description and embodiments in conjunction with the accompanying drawings.

Referring to fig. 1, a photolithographic quartz wafer with improved dropping strength comprises a quartz wafer 2, an upper electrode 21 and a lower electrode 22, wherein the quartz wafer 2, the upper electrode 21 and the lower electrode 22 form a quartz wafer vibration region, the quartz wafer 2 is provided with a welding terminal 4 fixedly connected with a bonding pad 3 inside a base 1, the upper electrode 21 and the lower electrode 22 are plated with gold or silver by an ion sputtering method, the upper electrode 21 is electrically connected with the top surface of the welding terminal 4 on the left side through an upper connecting arm 211, the lower electrode 22 is electrically connected with the bottom surface of the welding terminal 4 on the right side through a lower connecting arm 221, since the structures of the welding terminals 4 on the left side and the right side of the wafer are the same, only one side structure is emphasized here, the edge of the welding terminal 4 is provided with a semi-through hole 5 penetrating through the edge of the quartz wafer 2, the top surface of the welding terminal 4 and the bottom surface of the welding terminal 4 are, wherein be provided with three recess 6 on the welding end 4 top surface, the same position on the welding end 4 bottom surface is provided with three recess 6, and in order to ensure to connect firmly enough, three recess 6 on the welding end 4 top surface and the drill way of marginal semi-through hole 5 are located the four corners of welding end 4 top surface respectively.

The manufacturing process of the device comprises the following steps: 1. cleaning and drying a quartz wafer, and plating a metal film (ion sputtering gold plating); 2. coating photoresist on the upper surface and the lower surface of the quartz wafer by using a spin coating process; 3. curing the photoresist; 4. the wafer shape comprises edge half through hole shape double-sided exposure; 5. developing; 6. performing primary gold etching; 7. etching the appearance by a wet method; 8. cleaning and drying; 9. exposing the double-sided half groove of the bonding pad; 10. developing; 11. etching gold; 12. wet etching (no corrosion penetration) of a half groove; 13. stripping the glue and cleaning; 14. etching the gold on the whole surface and drying; 15. double-sided coating (ion sputtering gold plating); 16. exposing the double surfaces of the electrode and the bonding pad; 17. developing; 18. etching gold; 19. stripping off the glue, cleaning and drying; 20. appearance detection and electrical property detection; 22. dispensing; 23. dispensing; 23. dispensing and curing; 24. packaging the device; 25. and (6) detecting and outputting a finished product.

And in the dispensing curing process, the welding surface of the photoetching wafer is connected with the base pad through silver paste to form mechanical connection and electrical connection, as shown in figure 3. The process comprises the following steps: 1. dispensing silver paste on a pad shown in the base 3; 2. identifying the size of the glue through a visual system of the glue dispensing equipment, and judging whether the glue is qualified or not; 3. carrying the welding end of the photoetching wafer to the position of the bonding pad, overlapping the welding end of the wafer with the bonding pad in the base, and bonding the welding end of the photoetching wafer with the welding end of the photoetching wafer through silver glue; 4. dispensing glue to the welding end of the photoetching wafer again; through the upper and lower face point of gluing, the edge half through-hole and the upper and lower recess are inside fully filled to the silver glue. And then, through a high-temperature curing process, under the action of a physical mechanism of molecular thermal motion, the silver colloid is in full contact with the wafer molecules and forms an intermediate transition layer to strengthen the connection, the silver colloid molecules and the bonding pad are fully permeated under the high-temperature curing condition, and the groove and semi-through hole structure of the wafer bonding pad and the silver colloid in the groove form an occlusion structure similar to teeth after being cured to form mechanical interlocking force. And after the silver paste in the semi-through hole is cured, a rivet-like riveting structure is formed, the wafer is more stably fixed on the base bonding pad, the anti-vibration target of the wafer is realized, and the structure after the curing is shown in figures 2-3.

Claims

1. The utility model provides a promote quartzy wafer of photoetching of falling intensity, includes quartzy wafer (2), upper electrode (21) and bottom electrode (22), be provided with on quartzy wafer (2) with inside pad (3) fixed connection's of base (1) welding end (4), its characterized in that: the edge of the welding end (4) is provided with an edge semi-through hole (5) penetrating through the quartz wafer (2), and the top surface of the welding end (4) and the bottom surface of the welding end (4) are provided with at least two mutually symmetrical grooves (6).

2. The drop strength enhanced photolithographic quartz wafer of claim 1, wherein: the number of the grooves (6) is six, two of the grooves (6) are positioned at the edge of the quartz wafer (2), and the other four grooves (6) are positioned at the inner side of the quartz wafer (2).

3. The drop strength enhanced photolithographic quartz wafer of claim 2, wherein: the three grooves (6) on the top surface of the welding end (4) and the orifices of the edge semi-through holes (5) are respectively positioned at four corners of the top surface of the welding end (4).