CN212342653U - Ultraviolet LED chip epitaxial structure and chip - Google Patents
Ultraviolet LED chip epitaxial structure and chip Download PDFInfo
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- CN212342653U CN212342653U CN202020884255.XU CN202020884255U CN212342653U CN 212342653 U CN212342653 U CN 212342653U CN 202020884255 U CN202020884255 U CN 202020884255U CN 212342653 U CN212342653 U CN 212342653U
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Abstract
The utility model discloses an ultraviolet LED chip epitaxial structure, it includes: a substrate; an epitaxial layer disposed on the substrate; the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially arranged on the substrate; a refractive layer disposed on the second semiconductor layer; a current spreading layer disposed on the refraction layer; the refractive index of the refractive layer is smaller than that of the second semiconductor layer. The utility model also discloses an LED chip of using above-mentioned epitaxial structure. Implement the utility model discloses, can effectively reduce the total reflection effect of ultraviolet LED chip, promote the light efficiency.
Description
Technical Field
The utility model relates to a photoelectron makes technical field, especially relates to an ultraviolet LED chip epitaxial structure and chip.
Background
The ultraviolet LED chip is a novel solid-state ultraviolet light source, and compared with the traditional ultraviolet mercury lamp, the ultraviolet LED has the advantages of small size, light weight, low power consumption, long service life, environmental friendliness, continuous and adjustable light-emitting wavelength and the like, so that the ultraviolet LED chip is widely concerned in the related ultraviolet application field, especially in the disinfection field.
However, since the ultraviolet light has a high energy level, it is easily absorbed by other materials, and is easily totally reflected, so that the external performance is poor and the brightness is much lower than that of light sources in other bands. Therefore, the purple light emitted by mercury lamps cannot be completely replaced.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a ultraviolet LED chip epitaxial structure is provided, its light efficiency that can effectively promote ultraviolet LED chip.
The utility model discloses the technical problem who still remains to solve lies in, provides a LED chip.
In order to solve the technical problem, the utility model provides an ultraviolet LED chip epitaxial structure, it includes:
a substrate;
an epitaxial structure body; the semiconductor device comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially arranged on a substrate;
a refractive layer disposed on the second semiconductor layer;
a current spreading layer disposed on the refraction layer;
the refractive index of the refractive layer is smaller than that of the second semiconductor layer.
As an improvement of the technical proposal, the refraction layer is made of GaO and Ga2O、Ga2O3Or one of MgO.
As an improvement of the technical scheme, the current spreading layer is made of one of Si, Ti, Sn, Zn, Ge, Cu, Ni, Ag, Au or Ru.
As an improvement of the above technical solution, the refraction layer is made of GaO;
the current spreading layer is made of one of Sn, Ni, Au or Ru.
As an improvement of the above technical solution, the current spreading layer includes a first current spreading layer and a second current spreading layer;
the first current spreading layer is made of Ni or Ru;
the second current spreading layer is made of Au or Ag.
As an improvement of the technical scheme, the thickness of the refraction layer is 1-20 nm, the refraction rate is 1.75-2.2, the energy level is 4.2-5.1 eV, the intrinsic wavelength is 245-280 nm, and the electron mobility is 400-1000 m2/(V·s)。
As an improvement of the technical scheme, the thickness of the current spreading layer is 10-50 nm.
Correspondingly, the utility model also discloses a LED chip, it includes foretell ultraviolet LED chip epitaxial structure.
As an improvement of the above technical solution, the LED chip is a forward-mounted LED chip, a flip-chip LED chip, or a vertical LED chip.
Implement the utility model discloses, following beneficial effect has:
1. the utility model discloses introduced the refraction layer in ultraviolet LED chip epitaxial structure, its refracting index < the refracting index of second semiconductor layer. The epitaxial structure can effectively prevent ultraviolet light from emitting in full at the junction of the epitaxial structure and the ITO layer, and effectively improves the light efficiency of the ultraviolet LED chip. And simultaneously, the utility model provides a refraction layer has the characteristics in high energy band, and it can not absorb ultraviolet light, has further promoted the light-emitting effect.
2. The utility model provides a refraction layer is formed through oxygen plasma oxidation second semiconductor, its simple process. Moreover, the contact resistance of the refraction layer can be effectively reduced (less than 10) by doping metal elements in the refraction layer through annealing-2Omega), the luminous efficiency is improved. In addition, the second semiconductor layer can be planarized by oxidation with oxygen plasma, and defects of the second semiconductor layer can be reduced.
3. The utility model discloses a clear washing of oxygen plasma, annealing process form. The process can be well fused with the traditional epitaxial layer preparation, the manufacturing process is reduced, and the efficiency is improved.
Drawings
Fig. 1 is a schematic structural diagram of an ultraviolet LED chip epitaxial structure according to an embodiment of the present invention;
FIG. 2 is an electron micrograph of a second semiconductor layer that has not been oxidized by an oxygen plasma;
FIG. 3 is an electron micrograph of the second semiconductor layer after oxidation by oxygen plasma;
fig. 4 is a schematic structural diagram of an epitaxial structure of an ultraviolet LED chip according to another embodiment of the present invention;
fig. 5 is a flow chart of a method for manufacturing an ultraviolet LED chip epitaxial structure according to the present invention;
fig. 6 is a schematic structural diagram (front-mounted) of an LED chip according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram (upside-down mounting) of an LED chip according to another embodiment of the present invention;
fig. 8 is a schematic structural diagram (vertical) of an LED chip according to another embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings. Only this statement, the utility model discloses the upper and lower, left and right, preceding, back, inside and outside etc. position words that appear or will appear in the text only use the utility model discloses an attached drawing is the benchmark, and it is not right the utility model discloses a concrete restriction.
The ultraviolet light emitted by the ultraviolet LED chip has short wavelength and high light energy level, is easy to absorb, and is easy to generate total reflection between the epitaxial structure and the ITO layer, so that the luminous efficiency is low. Therefore, the utility model provides an ultraviolet LED chip epitaxial structure, see fig. 1, which comprises a substrate 1, an epitaxial layer 2, a refraction layer 3 and a current expansion layer 4; the epitaxial layer 2 sequentially comprises a first semiconductor layer 21, an active layer 22 and a second semiconductor layer 23 which are arranged on the substrate 1; the refractive layer 3 is provided on the second semiconductor layer 23, and the current spreading layer 4 is provided on the refractive layer 3. Wherein the refractive index of the refraction layer is less than that of the second semiconductor layer. The epitaxial structure can effectively prevent the ultraviolet light from generating the full-emission phenomenon at the junction of the epitaxial structure and the ITO layer, effectively improves the lighting effect of the ultraviolet LED chip, can replace a mercury lamp, is applied to the field of daily disinfection, and widens the application range of the ultraviolet LED chip.
The refractive layer 3 is formed by oxygen plasma bombardment, oxidizing the second semiconductor 23, and doping the metal element of the current spreading layer 4 by post annealing. The forming method can be well fused with the traditional epitaxial preparation process, and has simple process and high efficiency. In addition, the metal element is doped in the refraction layer 3 through the annealing process, so that the contact resistance of the refraction layer can be effectively reduced (less than 10)-2Omega), the luminous efficiency is improved. Further, by the oxidation by oxygen plasma, the second semiconductor layer can be planarized, reducing defects of the second semiconductor layer (see fig. 2 and 3).
The refractive layer 3 is made of GaO, Ga2O、Ga2O3Or one or more of MgO; preferably, the refractive layer 3 is made of GaO, Ga2O、Ga2O3With MgO; further preferably, it is made of a mixture of GaO and MgO. The GaO and MgO are formed during oxygen plasma oxidation. The refraction layer made of the material has the refraction rate of 1.75-2.2, so that the total reflection phenomenon of the ultraviolet LED chip can be effectively relieved; the energy level is 4.2-5.1 eV, and the intrinsic wavelength is 245-280 nm, so that the ultraviolet light is not absorbed, and the light can be emitted without light absorption.
The thickness of the refraction layer 3 is 1-20 nm; when the thickness of the material is less than 1nm, the material is easy to tunnel; when the thickness is more than 20nm, the contact resistance of the refraction layer is too high, and the light effect is influenced. Preferably, the thickness of the refraction layer 3 is 5-10 nm; exemplary are 4nm, 5nm, 7nm, 8nm, 10nm, but not limited thereto.
Since the refraction layer 3 is made of GaO, Ga2O、Ga2O3Etc., and has low electron mobility (less than 300 m)2V · s, the contact resistance is high. Therefore, the current spreading layer 4 is formed on the surface of the refractive layer 3, and the metal element in the current spreading layer 4 is doped into the refractive layer 3 through an annealing process. By the above process, electrons of the refractive layer 3 can be transferredThe moving rate is increased to 400-1000 m2V · s), contact resistance is reduced to 10-2Below omega, promote the light efficiency of ultraviolet LED chip.
The current spreading layer 4 is a transparent conductive thin film including at least one element of Si, Ti, Sn, Zn, Ge, Cu, Ag, Au, or Ru. Preferably, the current spreading layer 4 includes at least one element of Ni, Au, Rh, and Sn. For example, in one embodiment of the present invention, the current spreading layer 4 may be a transparent conductive film containing Sn, such as an ITO film. In another embodiment of the present invention, the current spreading layer 4 includes a first current spreading layer 41 and a second current spreading layer 42; the first current spreading layer 41 is a Ni thin film, and the second current spreading layer 42 is an Au thin film. In yet another embodiment of the present invention, the current spreading layer 4 includes a first current spreading layer 41 and a second current spreading layer 42; the first current spreading layer 41 is made of an Rh thin film, and the second current spreading layer 42 is made of an Au thin film.
The thickness of the current spreading layer 4 is more than 10 nm; preferably, the thickness of the film is 10 to 50 nm. When the thickness is larger than 50nm, although the contact resistance can be effectively improved, the current diffusion capability is also reduced, so that the current is concentrated in a certain area, which is not beneficial to improving the luminous efficiency. Further preferably, the thickness of the current spreading layer 4 is 15 to 30nm, and is exemplarily 12nm, 18nm, 24nm, 25nm, 27nm, but is not limited thereto.
Specifically, in the present embodiment, the epitaxial layer 2 includes a first semiconductor layer 21, an active layer 22, and a second semiconductor layer 23 sequentially provided on the substrate 1; specifically, the first semiconductor layer 21 is an N-GaN layer or an N-AlGaN layer, but is not limited thereto; preferably, the first semiconductor layer 21 is an N-GaN layer having a thickness of 2 to 5 μm. The active layer 22 is made of a plurality of stacked Al layersxGa1-xN quantum well layer and AlyGa1-yAn N barrier layer. The second semiconductor layer 23 is a P-GaN layer or a P-AlGaN layer, but is not limited thereto; preferably, the second semiconductor layer 23 is a P-GaN layer having a thickness of 1 to 5 μm.
Further, referring to fig. 4, in another embodiment of the present invention, the epitaxial layer 2 further includes a buffer layer 24 disposed between the substrate 1 and the first semiconductor layer 21; and an electron blocking layer 25 disposed between the active layer 22 and the second semiconductor layer 23; the buffer layer 24 may be, but not limited to, an AlN layer, an AlGaN superlattice layer, or a u-GaN layer. Preferably, the buffer layer 24 is a composite layer of an AlN layer provided on the substrate and a u-GaN layer provided on the AlN layer. The electron blocking layer may be an N-AlGaN layer or a P-AlGaN layer, but is not limited thereto. Preferably, the electron blocking layer is a P-AlGaN layer.
Correspondingly, referring to fig. 5, the utility model also discloses a preparation method of above-mentioned ultraviolet LED chip epitaxial structure, it includes following step:
s1: providing a substrate;
the substrate is sapphire, SiC or spinel, but not limited thereto.
S2: sequentially forming a first semiconductor layer, an active layer and a second semiconductor layer on a substrate;
specifically, S2 includes:
s21: sequentially forming a first semiconductor layer, an active layer and a second semiconductor layer on a substrate to obtain an epitaxial layer;
specifically, the first semiconductor layer, the active layer, and the second semiconductor layer are formed by using an MOCVD method, a PECVD method, or an MBE method.
Specifically, after the epitaxial layer is formed, annealing can be performed on the epitaxial layer; annealing may not be performed; preferably, no annealing is performed at this step.
S22: and cleaning the substrate with the epitaxial layer by using 511 cleaning agent, BOE cleaning agent, acetone and isopropanol in sequence.
Specifically, the 511 cleaning agent is a mixture of sulfuric acid, hydrogen peroxide and water, and the ratio of sulfuric acid: hydrogen peroxide: water 5:1: 1; the BOE cleaning agent is a mixture of hydrofluoric acid and ammonium fluoride, and the ammonium fluoride (40%): hydrofluoric acid (49%) was 6: 1.
By adopting the cleaning agent for cleaning, pollutants on the surface of the epitaxial layer can be effectively removed, and a good foundation is provided for the bombardment and oxidation of the oxygen plasmas in the later period.
S3: forming a refractive layer on the second semiconductor layer;
specifically, the refractive layer may be formed by, but not limited to, an MBE method, a PECVD method, an MOCVD method, or a plasma cleaning method.
Preferably, the second semiconductor layer is treated by a plasma cleaner, and the second semiconductor layer is partially oxidized by oxygen plasma generated by the plasma cleaner to form the refraction layer. The method has short manufacturing process and low cost, and can be fused with the traditional epitaxial preparation process.
In particular, the working gas of the plasma cleaning machine is an oxygen-containing gas, such as O2、O3、H2O, air, NO, N2O, etc., but are not limited thereto; preferably, O is selected2. The flow rate of the working gas is 30-50 sccm; exemplary are, but not limited to, 30sccm, 32sccm, 36sccm, 40sccm, 45sccm, 48 sccm.
The DC power of the plasma cleaning machine is 30-100W, and the RF power is 80-150W. The cleaning time is 5-20 min, and if the cleaning time is more than 20min, the voltage of the chip is overhigh.
S4: and forming a current expansion layer on the refraction layer to obtain a finished product of the ultraviolet LED chip epitaxial structure.
Specifically, S4 includes:
s41: forming a current spreading layer on the surface of the refraction layer;
specifically, the current spreading layer may be formed by evaporation, sputtering, or the like, but is not limited thereto.
S42: annealing at 450-600 ℃ for 10-30 min to obtain the ultraviolet LED chip epitaxial structure finished product.
Specifically, by annealing, the metal element in the current spreading layer can be diffused into the refraction layer, so that the contact resistance thereof is reduced.
It should be noted that, in the present invention, after the epitaxial layer is formed, a single annealing may be performed, and then after the refraction layer and the current spreading layer are formed, an annealing may be performed again in common, that is, two anneals may be performed in total. It is also possible to perform annealing once after forming the refraction layer and the current spreading layer, i.e., annealing once in total, without annealing after forming the epitaxial layer. It is also possible to anneal after the epitaxial layer is formed, after the formation of the tabsThe emitter layer and the current spreading layer are not annealed, i.e. a total of one anneal is performed. Preferably, in the present invention, annealing is not performed separately after the epitaxial layer is formed, and annealing may be performed once after the refraction layer and the current spreading layer are formed. This kind of technology makes the utility model provides a refraction layer and electric current extension layer can fuse with the preparation technology of traditional epitaxial structure, effectively shorten the processing procedure, promote production efficiency, and can effectively promote the light efficiency. The results of the tests of the three schemes are shown in the following table, and it can be seen from the table that the common one-time annealing can be improved
To 107.5% of the conventional structure; and two annealing steps can promote
The two are close to 108.5 percent of the traditional structure.
Correspondingly, the utility model discloses in, still disclose a LED chip, it includes foretell ultraviolet LED chip epitaxial structure.
Specifically, in an embodiment of the present invention, the LED chip is a front-mounted LED chip. Referring to the drawings, which include an ultraviolet LED chip epitaxial structure 100, a transparent conductive layer 200, a first electrode 300, a second electrode 400, and a passivation layer 500; the ultraviolet LED chip epitaxial structure 100 includes a substrate 110, and an epitaxial layer 120, a refraction layer 130, and a current spreading layer 140 sequentially disposed on the substrate 110. The epitaxial layer 120 includes a first semiconductor layer 121, an active layer 122, and a second semiconductor layer 123 in sequence. When the LED chip is prepared, holes penetrating through the current spreading layer 140, the refraction layer 130, the second semiconductor layer 123 and the active layer 122 are formed through a photoetching process; the first electrode 300 is disposed in the hole and electrically connected to the first semiconductor layer 121. The transparent conductive layer 200 is disposed on the current spreading layer 140, and the second electrode 400 is disposed on the transparent conductive layer 300. A passivation layer 500 is disposed on the first electrode 300, the second electrode 400, the surface of the transparent conductive layer 200 and the exposed sidewalls of the epitaxial layer 120 to protect the LED.
Wherein, the transparent conductive layer 300 is made of one or more of Indium Tin Oxide (ITO), Fluorine Tin Oxide (FTO) and Aluminum Zinc Oxide (AZO); but is not limited thereto. The first electrode 400 and the second electrode 500 are a laminated structure, which is composed of two or more of Cr, Ti, Ni, Sn, Au, and Pt. The passivation layer 500 is made of photoresist, SiO2、SiNxOr Ni.
Specifically, in another embodiment of the present invention, the LED chip is a flip LED chip, specifically, it includes: an ultraviolet LED chip epitaxial structure 100 (comprising a substrate 110, and an epitaxial layer 120, a refraction layer 130 and a current expansion layer 140 which are sequentially arranged on the substrate 110); a transparent conductive layer 200 disposed on the current spreading layer 140, and a first electrode 300 and a second electrode 400 disposed on the transparent conductive layer 200; an insulating protective layer 500 provided on the first electrode 300 and the second electrode 400; a reflective layer 600 disposed on the insulating protective layer 500 and first and second electrode adhesive layers 700 and 800 disposed on the reflective layer 600; wherein the first electrode 300 is electrically connected to the first electrode adhesive layer 700 through a hole penetrating the reflective layer 600 and the insulating protective layer 500; the second electrode 400 is electrically connected to the second electrode adhesive layer 800 through a hole penetrating the reflective layer 600 and the insulating protective layer 500.
Wherein, the transparent conductive layer 200 is made of one or more of Indium Tin Oxide (ITO), Fluorine Tin Oxide (FTO) and Aluminum Zinc Oxide (AZO); but is not limited thereto. The insulating protective layer 500 is made of SiO2Or SiNxPreparing; but are not limited thereto; the reflective layer 600 includes at least one layer of SiO2A layer and at least one layer of Ti3O5Layer, preferably, by multilayer SiO2Layer and Ti3O5The layers are stacked.
Specifically, in another embodiment of the present invention, the LED chip is a vertical LED chip. Referring to the figure, it includes: a second substrate 200; a back metal layer 300 disposed on the back surface of the second substrate; the bonding layer 400, the composite reflecting layer 500, the transparent conducting layer 600, the epitaxial structure 100, the passivation layer 700 and the first electrode 800 are sequentially arranged on the front surface of the second substrate; the epitaxial structure 100 includes a current spreading layer 140, a refraction layer 130, a second semiconductor layer 123, an active layer 122, and a first semiconductor layer 121 sequentially disposed on the transparent conductive layer 300. The first electrode 800 is connected to the first semiconductor layer 121 through the passivation layer 700.
The transparent conductive layer 600 is made of one or more of Indium Tin Oxide (ITO), Fluorine Tin Oxide (FTO), and Aluminum Zinc Oxide (AZO); but is not limited thereto.
The composite reflective layer 500 includes a reflective layer 510 and an etch stop layer 520. The reflective layer 510 is made of Ag and/or Al, and can effectively reflect light emitted from the epitaxial structure. The etch stopper 520 may prevent the metal ion migration and diffusion of the reflective layer 41. The etch stopper 520 is a stacked structure composed of two or more of Cr, Pt, Ti, Au, Ni, and TiW. Preferably, the etch stopper 520 is composed of a Cr layer and a TiW layer.
The second substrate 200 is a transfer substrate for an epitaxial structure. Specifically, a copper substrate or a conductive silicon substrate may be used, but is not limited thereto.
The passivation layer 700 is made of silicon dioxide, which is used to protect the LED chip; the first electrode 800 is a laminated structure, which is composed of two or more of Cr, Ti, Ni, Sn, Au, and Pt. The back metal layer 300 has a stacked structure, and is composed of two or more of Cr, Ti, Ni, Sn, Au, and Pt.
The foregoing is a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations are also considered as the protection scope of the present invention.
Claims (9)
1. An ultraviolet LED chip epitaxial structure, comprising:
a substrate;
an epitaxial structure body; the semiconductor device comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially arranged on a substrate;
a refractive layer disposed on the second semiconductor layer;
a current spreading layer disposed on the refraction layer;
the refractive index of the refractive layer is smaller than that of the second semiconductor layer.
2. The ultraviolet LED chip epitaxy structure of claim 1, wherein the refractive layer is made of GaO, Ga2O、Ga2O3Or one of MgO.
3. The ultraviolet LED chip epitaxy structure of claim 1, wherein the current spreading layer is made of one of Si, Ti, Sn, Zn, Ge, Cu, Ni, Ag, Au or Ru.
4. The ultraviolet LED chip epitaxy structure of claim 1, wherein the refractive layer is made of GaO;
the current spreading layer is made of one of Sn, Ni, Au or Ru.
5. The ultraviolet LED chip epitaxy structure of claim 1 or 4, wherein the current spreading layer comprises a first current spreading layer and a second current spreading layer;
the first current spreading layer is made of Ni or Ru;
the second current spreading layer is made of Au or Ag.
6. The UV LED chip epitaxial structure of claim 1, wherein the refractive layer has a thickness of 1-20 nm, a refractive index of 1.75-2.2, an energy level of 4.2-5.1 eV, an intrinsic wavelength of 245-280 nm, and an electron mobility of 400-1000 m2/(V·s)。
7. The ultraviolet LED chip epitaxial structure of claim 1, wherein the thickness of the current spreading layer is 10 to 50 nm.
8. An LED chip, characterized in that it comprises the ultraviolet LED chip epitaxial structure of any one of claims 1 to 7.
9. The LED chip of claim 8, wherein said LED chip is a face-up LED chip, a flip LED chip, or a vertical LED chip.
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| CN202020884255.XU CN212342653U (en) | 2020-05-22 | 2020-05-22 | Ultraviolet LED chip epitaxial structure and chip |
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| CN202020884255.XU CN212342653U (en) | 2020-05-22 | 2020-05-22 | Ultraviolet LED chip epitaxial structure and chip |
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