CN212335353U - Improved generation silicon core is heating structure for ingot furnace - Google Patents
Improved generation silicon core is heating structure for ingot furnace Download PDFInfo
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- CN212335353U CN212335353U CN202020249453.9U CN202020249453U CN212335353U CN 212335353 U CN212335353 U CN 212335353U CN 202020249453 U CN202020249453 U CN 202020249453U CN 212335353 U CN212335353 U CN 212335353U
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Abstract
The utility model provides an improved heating structure for a silicon core ingot furnace, which comprises a top plate; the top heater is arranged below the top plate in parallel, and a graphite electrode is arranged between the top heater and the top plate; the side heaters are uniformly distributed on the side surfaces of the periphery of the top plate and are connected with the top heater through a connecting plate; and the bottom surface heater is arranged below the side surface heater and is parallel to the top plate. The utility model discloses rational in infrastructure, accuse temperature is even, compares prior art's heating methods, the utility model discloses a six heating, top heating + heating all around-the bottom heating has solved the big problem of the control by temperature change degree of difficulty, possesses the characteristics that the ingot casting efficiency of accuse temperature is even, silicon bulk improves.
Description
Technical Field
The utility model belongs to the technical field of thermal-insulated cage, a heating structure for improved generation silicon core ingot furnace is related to.
Background
The silicon core ingot furnace is necessary equipment in the process of converting polycrystalline silicon into polysilicon cores, and the polycrystalline silicon is a basic raw material in photovoltaic power generation and semiconductor industries. Polycrystalline silicon is one of the most important polycrystalline materials in the world as a key supporting material of the modern information society, and not only is the main functional material for developing computers and integrated circuits, but also the main functional material for photovoltaic power generation and solar energy utilization.
The heating mode for the silicon core ingot furnace has the following functions: and melting the silicon material in the quartz crucible by a heater in the silicon core ingot casting process. In the silicon core ingot furnace in the prior art, heaters are not uniformly distributed, temperature gradient is difficult to control, inaccurate temperature control is easily caused, and the yield of silicon cores is finally influenced.
To sum up, for solving the current not enough that thermal-insulated cage is structural, the utility model designs an improved generation silicon core ingot furnace heating structure that ingot casting efficiency of rational in infrastructure, adoption top heating + heating all around + bottom heating, assurance thermal field's gradient, accuse temperature are even, silicon bulk improves.
Disclosure of Invention
The utility model provides an improved heating structure for silicon core ingot furnace, which has the advantages of reasonable structure, even temperature control and good use effect.
The purpose of the utility model can be realized by the following technical proposal:
an improved generation silicon core is heating structure for ingot furnace, includes:
a top plate;
the top heater is arranged below the top plate in parallel, and a graphite electrode is arranged between the top heater and the top plate;
the side heaters are uniformly distributed on the side surfaces of the periphery of the top plate and are connected with the top heater through a connecting plate;
and the bottom surface heater is arranged below the side surface heater and is parallel to the top plate.
As a further improvement, the bottom surface heater comprises bottom surface resistance heaters and bottom surface graphite electrodes, the bottom surface resistance heaters are uniformly distributed, and the bottom surface graphite electrodes are arranged below the bottom surface resistance heaters.
As a further improvement, the bottom surface graphite electrodes are divided into two groups, and the two groups are arranged in equal number and are uniformly arranged in the length direction.
As a further improvement, the number of the bottom graphite electrodes arranged in each group is three, and the bottom graphite electrodes in the length direction are arranged in a staggered mode.
As a further improvement, the top heater comprises a first resistive heater and a second resistive heater, the first resistive heater and the second resistive heater are adjacently disposed, and the first resistive heater and the second resistive heater are both in a closed configuration.
As a further improvement, the first resistance heater comprises a first part, a second part and a third part, the first part and the second part are of an F-shaped structure, the protruding parts of the first part and the second part are oppositely arranged, the first part is communicated with the second part, the second part is formed by adjacently connecting a plurality of U-shaped structures, the third part is of a rectangular structure, an inward concave arc-shaped section is arranged on one side of the third part far away from the first part, and one side of the third part close to the first part is communicated with the second part.
As a further improvement, the first resistance heater and the second resistance heater are symmetrically arranged below the rectangular top plate.
As a further improvement, the side heater is formed by connecting a plurality of U-shaped structures.
As a further improvement, a plurality of observation sleeves are arranged on the top plate and extend from the outside to the lower part of the top plate.
Compared with the prior art, the utility model has reasonable structure, adopts top heating, peripheral heating and bottom heating in the operation process of the silicon core ingot furnace, and the heaters are uniformly distributed, so that the heating is uniform and the temperature control is accurate in the whole working process; through the mode of six heats, six heats include top heater, side heater, and this side heater evenly distributed has constituted the rectangular zone of heating in roof side and bottom surface heater all around, and six structures of heating through even distributed resistance, have improved the efficiency of heating in the rectangular zone of heating, shorten the material time of changing, can effectively improve the success rate of silicon bulk ingot casting.
Drawings
FIG. 1 is a schematic perspective view of a heating structure for an improved silicon core ingot furnace;
FIG. 2 is a front view of a heating structure for the improved silicon core ingot furnace of the present invention;
FIG. 3 is a left side view of the heating structure for the improved silicon core ingot furnace of the present invention;
FIG. 4 is a schematic structural view of a top heater of a heating structure for the improved silicon core ingot furnace of the present invention;
FIGS. 5 and 6 are electric control diagrams of a first heating control mode of the heating structure for the improved silicon core ingot furnace;
fig. 7 and 8 are electric control diagrams of a second heating control mode in the heating structure for the improved silicon core ingot furnace.
Detailed Description
The technical solution of the present invention will be further explained with reference to the following embodiments and accompanying drawings.
As shown in fig. 1 to 8, the improved heating structure for the silicon core ingot furnace comprises:
an improved generation silicon core is heating structure for ingot furnace, includes:
a top plate 1;
the top heater 2 is arranged below the top plate 1 in parallel, and a graphite electrode 5 is arranged between the top heater and the top plate 1;
the side heaters 3 are uniformly distributed on the side surfaces of the periphery of the top plate 1, and the side heaters 3 are connected with the top heater 2 through a connecting plate 4;
and a bottom heater 8 disposed below the side heater 3 and parallel to the top plate 1.
As a further improvement, the bottom surface heater 8 includes a bottom surface resistance heater 81 and a bottom surface graphite electrode 82, the bottom surface resistance heater 81 is uniformly arranged, and the bottom surface graphite electrode 82 is arranged below the bottom surface resistance heater 81.
The silicon core ingot furnace is a necessary device in the process of converting polysilicon into polysilicon core. In the using process of the silicon core ingot furnace, high-temperature heating is needed, the silicon material in the quartz crucible is melted by the heater, in the process, the temperature of the quartz crucible is uniformly controlled, the quartz crucible cannot be uniformly heated by a heating mode in the prior art, the temperature is poorly controlled, the difficulty of final temperature gradient control is increased, and the silicon core yield is finally influenced.
As shown in figures 1-7, for this reason the utility model discloses an improved generation silicon core is heating structure for ingot furnace evenly is equipped with top heater 2, side heater 3 and bottom surface heater 8 through below and four sides at roof 1, and side heater 3 links to each other with top heater 2 through a plurality of connecting plates 4, so set up and make, at the in-process that carries out high temperature heating, quartz crucible can temperature control evenly, and temperature gradient control is easy, and ultimate silicon core yield is high. Through the mode of six heats, six heats include top heater, side heater, and this side heater evenly distributed has constituted the rectangular zone of heating in roof side and bottom surface heater all around, and six structures of heating through even distributed resistance, have improved the efficiency of heating in the rectangular zone of heating, shorten the material time of changing, can effectively improve the success rate of silicon bulk ingot casting.
As a further preferred embodiment, the bottom surface heater 8 includes a bottom surface resistance heater 81 and a bottom surface graphite electrode 82, the bottom surface resistance heater 81 is uniformly arranged, and the bottom surface graphite electrode 82 is disposed below the bottom surface resistance heater 81.
In a further preferred embodiment, the bottom graphite electrodes 82 are provided in two groups, and the two groups are provided in equal numbers and uniformly in the longitudinal direction.
As a further preferred embodiment, the number of the bottom graphite electrodes 82 provided in each group is three, and the bottom graphite electrodes 82 in the longitudinal direction are staggered.
In this embodiment, the bottom surface heater 8 includes a bottom surface resistance heater 81 and a bottom surface graphite electrode 82, the bottom surface graphite electrode 82 is two sets, the number of each set is three, and the bottom surface graphite electrode 82 is respectively arranged on the side edge of the rectangle formed by the bottom surface resistance heater 81 in a staggered manner, so that in a specific working process, the heating is uniform, and the success rate of ingot casting of a silicon ingot is improved.
As a further preferred embodiment, the top heater 2 comprises a first resistance heater 21 and a second resistance heater 22, the first resistance heater 21 and the second resistance heater 22 are adjacently arranged, and the first resistance heater 21 and the second resistance heater 22 are both in a closed structure.
As a further preferred embodiment, the first resistance heater 21 includes a first portion 211, a second portion 212, and a third portion 213, the first portion 211 and the second portion are F-shaped, the first portion 211 and the second portion 212 are disposed opposite to each other, and the first portion 211 and the second portion 212 communicate with each other. The second portion 212 is formed by adjacently connecting a plurality of U-shaped structures, the third portion 213 is a rectangular structure, an inward-concave arc-shaped section 2111 is arranged on one side of the third portion 213 away from the first portion 211, and one side of the third portion 213 close to the first portion 211 is communicated with the second portion 212.
In a further preferred embodiment, the second resistance heater 22 includes a first resistance portion 221, a second resistance portion 222, and a third resistance portion 223, and the third resistance portion 223 is provided with a second notch 224.
As a further preferred embodiment, the first resistance heater 21 is further provided with a first notch 214.
More specifically, the first resistance heater 21 and the second resistance heater 22 are symmetrically disposed below the rectangular top plate 1.
Compared with the prior art, the structures and the distribution modes of the first resistance heater 21 and the second resistance heater 22 are uniformly distributed on the upper surface of the whole silicon core ingot furnace, so that the control of temperature gradient is facilitated, and the silicon core yield is effectively improved.
As a further preferred embodiment, the side heater 3 is formed by connecting a plurality of U-shaped structures.
Compared with the prior art, the improved heating structure for the silicon core ingot furnace is characterized in that resistance heaters are arranged on the lower portion, the four side faces and the bottom face of the top plate 1, the resistance heaters are respectively a top heater 2, a side heater 3 and a bottom heater, so that the silicon core ingot furnace can heat uniformly, and the temperature gradient is easy to control. Further more, the structure setting of side heater 3 and top heater 2 is even, and side heater 3 connects the constitution for a plurality of U type structure mutually, and top heater 3 structural symmetry just evenly arranges, and the structure of contrast prior art arranges, and in the heating process, the control by temperature change can be accurate and the heating is even for being heated of furnace body the inside is even.
As a further preferred embodiment, the top plate 1 is provided with a plurality of viewing sleeves 6, which extend from the outside to below the top plate 1.
As for the electric control, there are three modes of operation:
in a first mode
The heating is controlled by two power cabinets, the top heater 2 and the side heater 3 are connected together through a connecting plate 4, the top heater 2 and the side heater 3 are controlled by one power cabinet to heat, and the bottom heater 8 is controlled by the other power cabinet to heat.
Compared with the prior art, the silicon ingot melting furnace has the advantages that the resistors are uniformly distributed, the melting speed is obviously accelerated in the working process, the temperature can be balanced, the temperature gradient is easy to control, and the success rate of silicon ingot casting is effectively improved.
Mode two
The heating is controlled by three power cabinets, and the top heater 2, the side heater 3 and the bottom heater 8 are respectively controlled by one power cabinet to heat.
The heating is controlled by the three power cabinets, because the resistors are uniformly distributed on six surfaces, the material melting speed in the heating area of the cuboid is accelerated in the engineering process, the material melting time is shortened, the heating is controlled by the three power cabinets, the control accuracy is improved, and the success rate of ingot casting of silicon ingots is effectively improved.
Mode III
The heating is controlled by two power cabinets, the top heater 2 and the bottom heater 8 are controlled by one power cabinet to heat, and the side heater 3 is controlled by the other power cabinet to heat.
Compared with the prior art, the silicon ingot melting furnace has the advantages that the resistors are uniformly distributed, the melting speed is obviously accelerated in the working process, the temperature can be balanced, the temperature gradient is easy to control, and the success rate of silicon ingot casting is effectively improved.
Contrast prior art adopts the four sides heating and the zone of heating is the square, the utility model discloses a six heating, top heating + heating all around + bottom heating, the zone of heating is the rectangle. By adopting the six-surface heating, the resistances of the six surfaces are uniformly distributed, the temperature is uniformly controlled, and the silicon core yield is high in the working process.
The preferred embodiments of the present invention are described herein, but the scope of the present invention is not limited thereto. Modifications or additions to or replacement by similar means to those skilled in the art to which the invention pertains to the specific embodiments described herein are intended to be covered by the scope of the invention.
Claims (9)
1. An improved generation silicon core is heating structure for ingot furnace, its characterized in that includes:
a top plate (1);
the top heater (2), the top heater (2) is arranged below the top plate (1) in parallel, and a graphite electrode (5) is arranged between the top heater and the top plate (1);
the side heaters (3) are uniformly distributed on the sides of the periphery of the top plate (1), and the side heaters (3) are connected with the top heater (2) through a connecting plate (4);
and the bottom surface heater (8) is arranged below the side surface heater (3) and is parallel to the top plate (1).
2. The improved heating structure for the silicon core ingot furnace as set forth in claim 1, wherein the bottom surface heater (8) comprises bottom surface resistance heaters (81) and bottom surface graphite electrodes (82), the bottom surface resistance heaters (81) are uniformly arranged, and the bottom surface graphite electrodes (82) are arranged below the bottom surface resistance heaters (81).
3. The improved heating structure for the silicon core ingot furnace as set forth in claim 2, wherein the bottom graphite electrodes (82) are arranged in two groups, and the two groups are arranged in equal number and uniformly in the length direction.
4. The improved heating structure for the silicon core ingot furnace as set forth in claim 3, wherein the number of the bottom graphite electrodes (82) per group is three, and the bottom graphite electrodes (82) in the length direction are staggered.
5. An improved heating structure for silicon core ingot furnace according to claim 1, wherein the top heater (2) comprises a first resistance heater (21) and a second resistance heater (22), the first resistance heater (21) and the second resistance heater (22) are adjacently arranged, and the first resistance heater (21) and the second resistance heater (22) are both in a closed structure.
6. The heating structure for the improved silicon core ingot furnace as claimed in claim 5, wherein the first resistance heater (21) comprises a first part (211), a second part (212) and a third part (213), the first part (211) and the second part are in an F-shaped structure, the protruding parts of the first part (211) and the second part (212) are oppositely arranged, the first part (211) is communicated with the second part (212), the second part (212) is formed by adjacently connecting a plurality of U-shaped structures, the third part (213) is in a rectangular structure, an inward concave arc-shaped section (2111) is arranged on one side far away from the first part (211), and one side of the third part (213) close to the first part (211) is communicated with the second part (212).
7. The improved heating structure for the silicon core ingot furnace as claimed in claim 5, wherein the first resistance heater (21) and the second resistance heater (22) are symmetrically arranged below the rectangular top plate (1).
8. The improved heating structure for the silicon core ingot furnace as claimed in claim 3, wherein the side heater (3) is formed by connecting a plurality of U-shaped structures.
9. The improved heating structure for the silicon core ingot furnace is characterized in that a plurality of observation sleeves (6) are arranged on the top plate (1), and the observation sleeves extend from the outside to the lower part of the top plate (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020249453.9U CN212335353U (en) | 2020-03-04 | 2020-03-04 | Improved generation silicon core is heating structure for ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020249453.9U CN212335353U (en) | 2020-03-04 | 2020-03-04 | Improved generation silicon core is heating structure for ingot furnace |
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| Publication Number | Publication Date |
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| CN212335353U true CN212335353U (en) | 2021-01-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202020249453.9U Active CN212335353U (en) | 2020-03-04 | 2020-03-04 | Improved generation silicon core is heating structure for ingot furnace |
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