CN211954514U - Half-bridge semiconductor strain gauge - Google Patents

Abstract

The utility model discloses a half-bridge semiconductor strain gauge, which comprises a P-type silicon substrate, wherein the top surface of the P-type silicon substrate is provided with three electrodes, the three electrodes are respectively positioned at the two ends and the middle part of the P-type silicon substrate, and the three electrodes are respectively connected with gold wires to form a half-bridge structure; the width of the P-type silicon substrate between the three electrodes is smaller than that of the P-type silicon substrate below the three electrodes; the semiconductor strain gauge forms a half bridge, is convenient to install and use, and can improve the precision of the sensor.

Description

Half-bridge semiconductor strain gauge

Technical Field

The utility model relates to a sensor technical field specifically is a half-bridge semiconductor strain gauge.

Background

Semiconductor strain gauge (semiconductor strain gauge), a sensitive element made of semiconductor single crystal silicon by using piezoresistive effect, is also called semiconductor strain gauge. The piezoresistive effect is a phenomenon that when a semiconductor crystal material is stressed in a certain direction and deformed, the resistivity of the material changes. The semiconductor strain gauge needs to be adhered to a test piece to measure the strain of the test piece or indirectly sense the measured external force by being adhered to an elastic sensitive element. The elastic sensitive elements with different configurations can be used for measuring mechanical quantities of stress, strain, pressure, torque, acceleration and the like of various objects. Compared with a resistance strain gauge, the semiconductor strain gauge has the advantages of high sensitivity coefficient (about 50-100 times higher), small mechanical hysteresis, small volume, low power consumption and the like.

The existing semiconductor strain gauges are generally composed of a substrate, electrodes and leads, four semiconductor strain gauges are required to be used for forming a Wheatstone bridge when the existing semiconductor strain gauges are used, the occupied space is large, and the existing semiconductor strain gauges are easily influenced by tangential stress and radial stress, so that the accuracy of a sensor is reduced.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a half-bridge semiconductor strainometer, this semiconductor strainometer itself forms the half-bridge, installation convenient to use to can improve the precision of sensor.

The utility model provides a technical scheme that its technical problem adopted is:

a half-bridge semiconductor strain gauge comprises a P-type silicon substrate, wherein the top surface of the P-type silicon substrate is provided with three electrodes, the three electrodes are respectively positioned at two ends and the middle part of the P-type silicon substrate, and gold wires are respectively connected to the three electrodes to form a half-bridge structure; the width of the P-type silicon substrate between the three electrodes is smaller than that of the P-type silicon substrate below the three electrodes.

Further, the width of the P-type silicon substrate between the three electrodes is 0.1 mm.

The utility model has the advantages that the two traditional strainometers are connected in series to form a half-bridge structure, and the two strainometers of the half-bridge are made of adjacent materials, so that the defect caused by material discreteness can be eliminated; meanwhile, the width of the P-type silicon substrate between the three electrodes is smaller than that of the P-type silicon substrate below the three electrodes, namely, the P-type silicon substrate is provided with an electrode area with a larger area and a narrower strain area, so that the purposes of stress concentration and reliability improvement are achieved; the influence of tangential stress on radial stress is reduced, the accuracy of the sensor is improved, and the sensor can be applied to small-size and small-range pressure and force sensors and measurement of micro stress.

Drawings

The invention will be further described with reference to the following figures and examples:

fig. 1 is a schematic structural diagram of the present invention;

fig. 2 is a top view of the present invention;

fig. 3 is a schematic view of the present invention mounted on an E-shaped elastic body;

FIG. 4 is a stress diagram of the strain gage of the present invention after the E-shaped elastomer of FIG. 3 is subjected to pressure;

fig. 5 is a schematic diagram of the full-bridge strain gauge according to the present invention.

Detailed Description

Referring to fig. 1 and 2, the present invention provides a half-bridge semiconductor strain gauge, which includes a P-type silicon substrate 1, wherein the top surface of the P-type silicon substrate 1 is provided with three electrodes 2, the three electrodes 2 are respectively located at two ends and the middle part of the P-type silicon substrate 1, and the three electrodes are further respectively connected with gold wires 3 to form a half-bridge structure; the width of the P-type silicon substrate between the three electrodes is smaller than that of the P-type silicon substrate below the three electrodes. The P-type silicon substrate between the three electrodes is used as a strain area, and the width of the strain area is 0.1 mm.

As shown in fig. 3, the strain gauge is attached to the E-shaped elastic body 4, and when the E-shaped elastic body 4 receives a pressure P, the stress applied to the strain gauge is as shown in fig. 4. The utility model connects two traditional strain gauges in series into a half-bridge structure, because the two strain gauges of the half-bridge are made of adjacent materials, the defect caused by material discreteness can be eliminated; meanwhile, the width of the P-type silicon substrate between the three electrodes is smaller than that of the P-type silicon substrate below the three electrodes, namely, the P-type silicon substrate is provided with an electrode area with a larger area and a narrower strain area, so that the purposes of stress concentration and reliability improvement are achieved; the influence of tangential stress on radial stress is reduced, the accuracy of the sensor is improved, and the sensor can be applied to small-size and small-range pressure and force sensors and measurement of micro stress.

As shown in the figure 5, the two strain gauges of the utility model can form a full-bridge strain gauge, and the installation and the arrangement are convenient.

The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way; the invention is not limited to the embodiments described herein, but is capable of other embodiments according to the invention, and may be used in various other applications, including, but not limited to, industrial. Therefore, any simple modification, equivalent replacement, equivalent change and modification made to the above embodiments by the technical entity of the present invention all still belong to the protection scope of the technical solution of the present invention.

Claims (2)

1. A half-bridge semiconductor strain gauge is characterized by comprising a P-type silicon substrate, wherein the top surface of the P-type silicon substrate is provided with three electrodes which are respectively positioned at two ends and the middle part of the P-type silicon substrate, and gold wires are respectively connected to the three electrodes to form a half-bridge structure; the width of the P-type silicon substrate between the three electrodes is smaller than that of the P-type silicon substrate below the three electrodes.

2. The half-bridge semiconductor strain gauge of claim 1, wherein the width of the P-type silicon substrate between the three electrodes is 0.1 mm.

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