CN1128991C - X-type silicon microstrain solid-state piezo-resistance sensor and its making technology - Google Patents
X-type silicon microstrain solid-state piezo-resistance sensor and its making technology Download PDFInfo
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- CN1128991C CN1128991C CN 00113961 CN00113961A CN1128991C CN 1128991 C CN1128991 C CN 1128991C CN 00113961 CN00113961 CN 00113961 CN 00113961 A CN00113961 A CN 00113961A CN 1128991 C CN1128991 C CN 1128991C
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Abstract
The present invention relates to an X-shaped silicon microstrain solid-state piezoresistance sensor and a fabricating technology thereof. The pattern of an X-shaped four-terminal element (5) is engraved on silicon nitride, and then semiconductor materials are injected in silicon by mask etching, and two resistance strips which are perpendicular to each other of the X-shaped four-terminal element (5) can be obtained. The tail ends of the two resistance strips are pressed in a metal film to be used as a signal negative contact 1, a power contact 2, a signal positive contact 4 and a ground contact 3. The obtained sensor which has the advantages of minute volume, high sensitivity and wide linearity range can be widely used for measuring traction force, tension force, torque and pressure mechanisms comprising micro constructional elements.
Description
The present invention relates to solid-state piezoresistance sensor of a kind of silicon microstrain and manufacture craft thereof, integrate stress sensitive and power electricity transition detection, belong to the production and the application of force transducer.
At present, sensor generally adopts single metal foil gauge, bridge-type metal strain plate, silicon pressure drag bridge-type foil gauge both at home and abroad.The single metal foil gauge is during as measuring sensor, normal and other single foil gauge or peripheral circuit are complementary and could constitute measuring unit, so just exist inconsistency, thereby cause excessive zero-bit or temperature drift error, its measuring accuracy and sensitivity are lower simultaneously.The bridge-type metal strain plate is a kind of foil gauge of four single metal foil gauges as four resistor stripes on the Wheatstone bridge, because of the metal strain effect, it exists shortcomings such as volume is big, measurement sensitivity is low, the error of zero is big, can not detect some micro-members, faint strain.Silicon pressure drag bridge-type foil gauge is to make Wheatstone bridge by microelectric technique, micromachining technology on monocrystalline silicon piece, though have that structure is less, sensitivity is than advantages such as height, but still there are shortcomings such as the error of zero bigger than normal and temperature drift, this is because four resistor stripes of silicon pressure drag bridge-type foil gauge during as four resistance on four arms of measuring unit Wheatstone bridge, because processing technology is difficult to guarantee the consistance of four resistance, will cause the error of zero; When temperature changes,, and produce signal errors simultaneously owing to four resistance do not match to responsive to temperature.
The objective of the invention is to solve that conventional metals foil gauge volume is excessive, sensitivity is low, the error of zero is big, the shortcoming of temperature drift, and the shortcoming of the error of zero of silicon pressure drag bridge-type foil gauge and temperature drift and the solid-state piezoresistance sensor of a kind of " X " type silicon microstrain that designs, and provide a kind of technology of making this sensor, resulting this sensor has the advantage that volume is small, highly sensitive, the range of linearity is wide, be used in combination with other flexible members, can be widely used for measuring the pulling force, tension force, moment of torsion, the pressure that comprise little member mechanism.
The single four end piezoresistive strain instrument of the present invention " X " type adopt the integral planar structure, and it is different with the design of traditional metal strain plate and silicon pressure drag bridge-type foil gauge, and the Wheatstone bridge of four resistor stripes is substituted by one four end member spare.It is to utilize little processing, microelectric technique and technology, utilizes the Elasticity characteristic of silicon simultaneously, on the crystal orientation of monocrystalline silicon piece, makes " X " type four end member spares.It is a kind of solid-state piezoresistance sensor of mechanical quantity that integrates stress sensitive and power electricity transition detection.The solid-state piezoresistance sensor of this " X " type silicon strain has not only been avoided four errors that the resistance of pressure and temperature sensitivity is produced owing to not matching of common formation Wheatstone bridge, and has simplified greatly and calibrated and the needed external application circuit of temperature compensation.
Fig. 1 is a structure principle chart of the present invention.
Fig. 2 is a fundamental diagram of the present invention.
Below in conjunction with accompanying drawing structural principle of the present invention and operation principle are done in detail explanation.
With reference to Fig. 1, the present invention includes a silicon fiml 6, dispose one or four end elements, 5, four end members on the silicon fiml 6 Part 5 consists of one " X " type by two resistor stripes, and the angle between two resistor stripes is 90 ° ± 1 °, resistance The degree of depth of bar is 2～3 μ m, and width is 20～30 μ m, a resistance of " X " type four end elements 5 Two ends connect respectively the negative contact (1) of signal and the positive contact of signal (4), at the two ends of another resistance branch Other joining power contact (2) and ground contacts (3). Ground contacts 3 connects power supply ground, and power supply contact 2 connects electricity Source voltage+Vs, exciting current flow through power supply contact 2 and ground contacts 3, be added on the silicon fiml 6 pressure with Electric current is perpendicular. This pressure has been set up a transverse electric field, this electric field at " X " type four end elements 5 Pass " X " type four end element mid points. The voltage signal that produces is born by the positive contact 4 of signal and signal and is connect Draw between the point 1.
The solid-state piezoresistance sensor manufacture craft of silicon microstrain of the present invention: one deck silicon nitride that at first on the two sides of n type single crystal silicon sheet, is about 1000 dusts with the LPCVD deposition thickness.Then make the figure of " X " type four end member spares 5 by lithography, make the mask etching silicon nitride with photoresist again, obtain the degree of depth 2～3 μ m, " X " type structure of width 20～30 μ m at (100) crystal face.Be diffusion or ion-implanted semiconductor material boron in the silicon that is sequestered in " X " type structure with silicon nitride again, obtain two orthogonal resistor stripes of " X " type four end member spares 5, the resistance of resistor stripe is 1～2k Ω, and the angle between two resistor stripes is 90 ° ± 1 °.End at " X " type four end member spares 5 is pressed into golden film respectively as the negative contact 1 of signal, power supply contact 2, the positive contact 4 of signal, ground contacts 3.The thinning back side of autobiography sensor promptly gets the designed solid-state piezoresistance sensor of silicon microstrain through the scribing section at last to about 100 μ m.
With reference to Fig. 2, the principle of work of the solid-state piezoresistance sensor of " X " type silicon microstrain is described.Make " X " type four end member spares on the silicon diaphragm surface with diffusion or ion implantation technology.On a direction of four end member spares, be biased voltage and form a current i
2, do the time spent as shear stress, will produce a vertical current i
2The electric field change E of direction
1, electric field E
1The Potential distribution that causes this direction changes, thus with the current vertical direction on two ends can obtain by the voltage that caused by dynamometry output V
OUT, this voltage is proportional to E
1Electric field E
1With current density i
2With shear stress δ
12Product is in direct ratio, in case i
2Fixing, E
1Just only proportional with shear stress.Therefore, the output voltage V of generation
OUTWith add shear stress, promptly be directly proportional by dynamometry, good linear relationship is arranged, promptly between the two
V
OUT=dE
1=dk δ
12=k ' δ
12(1) wherein: d, k, k ' are scale-up factor, δ
12Be shear stress.
The invention provides with next embodiment:
The solid-state pressure drag instrument of silicon strain physical dimension: 2.5mm * 2.5mm * 0.1mm;
Sensitivity: 〉=0.6mv/ μ ε;
Heat drift of sensibility :≤0.2% ℃;
Strain limit: 〉=3000 μ ε;
Power supply: constant pressure source≤12VDC;
Working temperature :-40～85 ℃;
Fatigue lifetime: 〉=10
7Inferior.
Claims (4)
1. the solid-state piezoresistance sensor of " X " type silicon microstrain, comprise a silicon fiml (6), it is characterized in that, dispose one or four end member spares (5) on the silicon fiml (6), four end member spares (5) constitute one " X " type by two resistor stripes, connect negative contact (1) of signal and the positive contact of signal (4) respectively at the two ends of a resistance, at the two ends of another resistance difference joining power contact (2) and ground contacts (3).
2. the solid-state piezoresistance sensor of " X " according to claim 1 type silicon microstrain is characterized in that the angle between two resistor stripes is 1 ° of 90 ° ± μ.
3. according to claim 1, the solid-state piezoresistance sensor of 2 described " X " type silicon microstrain, it is characterized in that the degree of depth of said resistor stripe is 2～3 μ m, width is 20～30 μ m.
4. the solid-state piezoresistance sensor manufacture craft of " X " type silicon microstrain, on the two sides of n type single crystal silicon sheet, be one deck silicon nitride of 1000 dusts at first with the LPCVD deposit thickness, it is characterized in that, then make the figure of " X " type four end member spares (5) by lithography at crystal face, make the mask etching silicon nitride with photoresist again, obtaining the degree of depth is 2～3 μ m, width is " X " type structure of 20～30 μ m, be diffusion or ion-implanted semiconductor material in the silicon that is sequestered in " X " type structure with silicon nitride again, obtain two orthogonal resistor stripes of " X " type four end member spares (5), end at " X " type four end member spares (5) is pressed into metal film as the negative contact (1) of signal, power supply contact (2), positive contact of signal (4) and ground contacts (3), thinning back side to the 100 μ m of autobiography sensor, promptly at last through the scribing section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00113961 CN1128991C (en) | 2000-11-01 | 2000-11-01 | X-type silicon microstrain solid-state piezo-resistance sensor and its making technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00113961 CN1128991C (en) | 2000-11-01 | 2000-11-01 | X-type silicon microstrain solid-state piezo-resistance sensor and its making technology |
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| Publication Number | Publication Date |
|---|---|
| CN1293356A CN1293356A (en) | 2001-05-02 |
| CN1128991C true CN1128991C (en) | 2003-11-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 00113961 Expired - Fee Related CN1128991C (en) | 2000-11-01 | 2000-11-01 | X-type silicon microstrain solid-state piezo-resistance sensor and its making technology |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108267262B (en) * | 2016-12-30 | 2024-04-09 | 中国空气动力研究与发展中心超高速空气动力研究所 | Temperature self-compensating semiconductor piezoresistance strain gauge |
| CN107608548B (en) * | 2017-08-31 | 2021-02-05 | 厦门天马微电子有限公司 | Semiconductor pressure sensor, display panel and display device |
| CN113023658B (en) * | 2021-03-04 | 2024-05-28 | 上海迈振电子科技有限公司 | Resonant micro-cantilever beam chip and preparation method thereof |
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