CN1182587C - High temp resisting solid pressure resistance type plane film force sensitive chip and mfg method thereof - Google Patents
High temp resisting solid pressure resistance type plane film force sensitive chip and mfg method thereof Download PDFInfo
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- CN1182587C CN1182587C CNB031344461A CN03134446A CN1182587C CN 1182587 C CN1182587 C CN 1182587C CN B031344461 A CNB031344461 A CN B031344461A CN 03134446 A CN03134446 A CN 03134446A CN 1182587 C CN1182587 C CN 1182587C
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 24
- 238000005259 measurement Methods 0.000 claims abstract description 20
- 238000005516 engineering process Methods 0.000 claims abstract description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
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- 238000009413 insulation Methods 0.000 abstract 2
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- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000003466 welding Methods 0.000 description 9
- 239000011888 foil Substances 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
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- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB031344461A CN1182587C (en) | 2003-07-31 | 2003-07-31 | High temp resisting solid pressure resistance type plane film force sensitive chip and mfg method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CNB031344461A CN1182587C (en) | 2003-07-31 | 2003-07-31 | High temp resisting solid pressure resistance type plane film force sensitive chip and mfg method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1484319A CN1484319A (en) | 2004-03-24 |
CN1182587C true CN1182587C (en) | 2004-12-29 |
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Application Number | Title | Priority Date | Filing Date |
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CNB031344461A Expired - Fee Related CN1182587C (en) | 2003-07-31 | 2003-07-31 | High temp resisting solid pressure resistance type plane film force sensitive chip and mfg method thereof |
Country Status (1)
Country | Link |
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CN (1) | CN1182587C (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102980695B (en) * | 2012-11-29 | 2015-04-15 | 北京大学 | MEMS (Micro Electro Mechanical System) piezoresistive type absolute pressure sensor based on SOI (Silicon on Insulator) silicon chip |
CN102980694B (en) * | 2012-11-29 | 2015-07-29 | 北京大学 | Without the MEMS piezoresistive pressure transducer and preparation method thereof of strain films structure |
CN103398806B (en) * | 2013-07-25 | 2015-07-22 | 清华大学 | Chip of 6H-SiC high-temperature pressure sensor |
JP7320402B2 (en) * | 2019-08-08 | 2023-08-03 | ローム株式会社 | MEMS sensor |
CN111890249B (en) * | 2020-07-10 | 2021-11-16 | 东南大学 | Chip clamping and fixing and chip parallelism measuring structure for ultrasonic bonding |
CN112284605B (en) * | 2020-09-30 | 2021-10-22 | 西安交通大学 | Cross island beam membrane high-temperature micro-pressure sensor chip and preparation method thereof |
-
2003
- 2003-07-31 CN CNB031344461A patent/CN1182587C/en not_active Expired - Fee Related
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Publication number | Publication date |
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CN1484319A (en) | 2004-03-24 |
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Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: XI AN WEIBA INFORMATION MEASUREMENT AND CONTROL C Free format text: FORMER OWNER: XI AN COMMUNICATION UNIV. Effective date: 20071214 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20071214 Address after: Shaanxi city of Xi'an province Yan Cheung Road No. 99 Boyuan building Patentee after: Xi'an Winner Information Control Co., Ltd. Address before: No. 28, Xianning Road, Xi'an, Shaanxi Patentee before: Xi'an Jiaotong University |
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C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20041229 Termination date: 20120731 |