CN111122026A - Pressure sensor - Google Patents
Pressure sensor Download PDFInfo
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- CN111122026A CN111122026A CN201811296931.5A CN201811296931A CN111122026A CN 111122026 A CN111122026 A CN 111122026A CN 201811296931 A CN201811296931 A CN 201811296931A CN 111122026 A CN111122026 A CN 111122026A
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- pressure sensor
- substrate
- sensitive
- sensitive membrane
- piezoresistors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/225—Measuring circuits therefor
- G01L1/2262—Measuring circuits therefor involving simple electrical bridges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/04—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of resistance-strain gauges
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a pressure sensor, which comprises a circular sensitive diaphragm and four piezoresistive strips contacted with the sensitive diaphragm, wherein the four piezoresistive strips are positioned in the edge area of the sensitive diaphragm; wherein the edge region is a region corresponding to stress of the pressure sensor not less than 90% of the stress peak. The sensitive membrane is circular, so that the stress linearity of the edge area of the sensitive membrane is greatly improved; when the sensitive membrane is deformed, the stress is mainly concentrated in the edge area. When the piezoresistive strips are arranged in the edge area, the resistance change range of the piezoresistive strips in the working state can be effectively enlarged, so that the pressure sensor has higher output voltage.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a pressure sensor.
Background
With the continuous progress of technology in recent years, the application range of the piezoresistive pressure sensor is wider and wider, and accordingly, higher requirements on the precision and the reliability of the pressure sensor are required at the present stage.
The piezoresistive pressure sensor generally includes a sensitive diaphragm arranged on a surface of a substrate and capable of deforming, and a piezoresistive strip in contact with the sensitive diaphragm, wherein the piezoresistive strip can change its resistance according to the deformation of the sensitive diaphragm. In the pressure sensor, four piezoresistive strips are usually arranged in contact with the sensitive diaphragm, and the four piezoresistive strips usually form a wheatstone bridge, so that the pressure applied to the surface of the sensitive diaphragm is measured.
At this stage, the output voltage of the pressure sensor is generally small, which results in a low quality of the pressure sensor. Therefore, how to increase the output voltage of the pressure sensor is an urgent problem to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to provide a pressure sensor with higher output voltage.
To solve the above technical problem, the present invention provides a pressure sensor, including:
a substrate having a cavity;
a circular sensitive membrane located on the surface of the substrate and spanning the cavity;
four piezoresistive strips in contact with the sensitive diaphragm; the four piezoresistive strips are divided into two transverse piezoresistors and two longitudinal piezoresistors, and the piezoresistive strips are located in the edge area of the sensitive membrane; the edge area is an area corresponding to stress of the pressure sensor which is not less than 90% of a stress peak value;
lead electrodes on the surface of the substrate;
a lead electrically connecting the piezoresistive strip with the lead electrode.
Optionally, the longitudinal piezoresistance spans the edge of the sensitive membrane.
Optionally, the transverse piezoresistors are linear, and the longitudinal piezoresistors are U-shaped.
Optionally, the two transverse piezoresistors are distributed along the center of the sensitive membrane in a centrosymmetric manner; the two longitudinal piezoresistors are distributed along the center of the sensitive membrane in a centrosymmetric manner.
Optionally, the distance between adjacent piezoresistive strips is equal.
Optionally, the substrate is a silicon carbide substrate.
Optionally, the lead electrode is located at an edge of the substrate.
Optionally, the substrate is square, and the lead electrodes are arranged along the edge of the substrate.
Optionally, the lengths of the leads are all equal.
Optionally, the pressure sensor further includes:
an insulating layer between the sensitive diaphragm and the lead.
The invention provides a pressure sensor, which comprises a circular sensitive diaphragm and four piezoresistive strips contacted with the sensitive diaphragm, wherein the four piezoresistive strips are positioned at the edge area of the sensitive diaphragm; wherein the edge region is a region corresponding to stress of the pressure sensor not less than 90% of the stress peak. The sensitive membrane is circular, so that the stress linearity of the edge area of the sensitive membrane is greatly improved; when the sensitive membrane is deformed, the stress is mainly concentrated in the edge area. When the piezoresistive strips are arranged in the edge area, the resistance change range of the piezoresistive strips in the working state can be effectively enlarged, so that the pressure sensor has higher output voltage.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a pressure sensor according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a specific pressure sensor according to an embodiment of the present invention.
In the figure: 1. the piezoelectric sensor comprises a substrate, 2. a sensitive membrane, 3. a piezoresistive strip, 31. a transverse piezoresistive strip, 32. a longitudinal piezoresistive strip, 4. a lead electrode and 5. a lead.
Detailed Description
The core of the invention is to provide a pressure sensor. In the prior art, a sensitive diaphragm in a pressure sensor is usually a square sensitive diaphragm, and the stress linearity of the edge area of the square sensitive diaphragm is poor, and in order to ensure the performance of the pressure sensor, a piezoresistive strip can only be arranged in the area of the sensitive diaphragm close to the center, so that the output voltage of the pressure sensor is low.
The pressure sensor provided by the invention comprises a circular sensitive diaphragm and four piezoresistive strips contacted with the sensitive diaphragm, wherein the four piezoresistive strips are positioned at the edge area of the sensitive diaphragm; wherein the edge region is a region corresponding to stress of the pressure sensor not less than 90% of the stress peak. The sensitive membrane is circular, so that the stress linearity of the edge area of the sensitive membrane is greatly improved; when the sensitive membrane is deformed, the stress is mainly concentrated in the edge area. When the piezoresistive strips are arranged in the edge area, the resistance change range of the piezoresistive strips in the working state can be effectively enlarged, so that the pressure sensor has higher output voltage.
In order that those skilled in the art will better understand the disclosure, the invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a pressure sensor according to an embodiment of the present invention.
Referring to fig. 1, in the embodiment of the present invention, the pressure sensor includes a substrate 1 having a cavity; a circular sensitive membrane 2 which is positioned on the surface of the substrate 1 and spans the cavity; four piezoresistive strips 3 in contact with the sensitive membrane 2; wherein, the four piezoresistive strips 3 are divided into two transverse piezoresistors 31 and two longitudinal piezoresistors 32, and the piezoresistive strips 3 are all positioned at the edge area of the sensitive membrane 2; the edge area is an area corresponding to stress of the pressure sensor which is not less than 90% of a stress peak value; lead electrodes 4 on the surface of the substrate 1; and a lead wire 5 electrically connecting the piezoresistive strip 3 and the lead electrode 4.
The substrate 1 may be a silicon-based (Si) substrate 1 or a substrate 1 made of other materials in the embodiment of the present invention, and specific materials of the substrate 1 will be described in detail below, which will not be described herein again. A cavity is arranged on the surface of the substrate 1, and a sensitive membrane 2 spanning the cavity is arranged on the surface of the substrate 1. The sensitive membrane 2 is a membrane layer which mainly deforms, the sensitive membrane 2 usually covers the opening of the cavity, and the material of the sensitive membrane 2 usually needs to be matched with the material of the substrate 1. Since the sensitive membrane 2 spans the cavity, when an external pressure is applied to the surface of the sensitive membrane 2, the sensitive membrane 2 is deformed, and a stress is applied to the sensitive membrane 2.
The pressure sensor provided by the embodiment of the invention is provided with four piezoresistive strips 3, and the four piezoresistive strips 3 form a Wheatstone bridge. Typically, the four piezoresistive strips 3 are in direct contact with the sensitive diaphragm 2. When the pressure sensitive diaphragm works, the deformation of the sensitive diaphragm 2 can cause the deformation of the pressure resistant strip 3, and the change of the pressure resistant strip 3 according to the self deformation can cause the change of the self resistance.
The four piezoresistive strips 3 are divided into two transverse piezoresistors 31 and two longitudinal piezoresistors 32, wherein the transverse piezoresistors 31 are piezoresistors with the current direction of the piezoresistive strips 3 being perpendicular to the main stress direction of the positions; the longitudinal piezoresistance 32 is a piezoresistance whose resistance strip current direction is parallel to the main stress direction of the position. Wherein the main stress direction is generally the direction from the center of the sensitive membrane 2 to the piezoresistive strip 3. The two transverse piezoresistors 31 and the two longitudinal piezoresistors 32 can form a wheatstone bridge to measure the pressure applied to the surface of the sensitive diaphragm 2. For the specific working principle of the wheatstone bridge, reference may be made to the prior art, and the detailed description thereof is omitted here.
It should be noted that, in the embodiment of the present invention, the sensitive membrane 2 is circular. Compare and be square sensitive diaphragm 2 among the prior art, set sensitive diaphragm 2 to circular can obviously improve the stress linearity of 2 edges of sensitive diaphragm and reduce the stress concentration degree of 2 edges of sensitive diaphragm, and the stress concentration degree height leads to sensitive diaphragm 2 to take place to damage and influence the use easily in the use. The circular shape of the sensitive membrane 2 can improve the overall performance of the pressure sensor and increase the service life of the stress sensor.
In the embodiment of the invention, the piezoresistive strips 3 are all positioned at the edge area of the sensitive membrane 2; the edge area is an area corresponding to stress of the pressure sensor which is not less than 90% of a stress peak value.
In the embodiment of the present invention, for the circular sensitive membrane 2, when the sensitive membrane 2 deforms, the stress is mainly concentrated on the edge of the sensitive membrane 2, and the stress peak is usually the edge of the sensitive membrane 2. The stress distribution can be calculated by a finite element analysis tool according to parameters such as the thickness of the sensitive membrane 2, and the area corresponding to the stress of the pressure sensor which is not less than 90% of the stress peak value has different ranges according to different practical situations. Typically, for a circular sensing diaphragm 2, the edge region is generally circular and includes the edge of the sensing diaphragm 2.
It should be noted that the edge region not only is distributed on the surface of the sensitive membrane 2, but also extends to a part of the surface of the substrate 1 contacting with the edge of the sensitive membrane 2, because the stress generated by the deformation of the sensitive membrane 2 is also transmitted to the surface of the substrate 1. In the embodiment of the invention, the edge area is in the shape of a ring with the width of 20 μm, wherein the edge of the sensitive membrane 2 is located between the boundaries of the edge area.
It should be noted that, in general, the attenuation of stress in the substrate 1 is greater than the attenuation of stress in the sensitive membrane 2, and the distance between the outer boundary of the corresponding edge region and the edge of the sensitive membrane 2 is smaller than the distance between the inner boundary of the edge region and the edge of the sensitive membrane 2. It can be understood that, since the stress of the deformation of the sensitive membrane 2 is transmitted to the substrate 1, the piezoresistive strip 3 may not directly contact the sensitive membrane 2 in the embodiment of the present invention, but the piezoresistive strip 3 may deform itself while deforming the sensitive membrane 2.
In the embodiment of the present invention, the lead electrode 4 is generally disposed on the surface of the substrate 1 in the area where the sensitive membrane 2 is not disposed, and the lead electrode 4 generally corresponds to the wheatstone bridge established in the pressure sensor. That is, in the embodiment of the present invention, five lead electrodes 4 are generally provided on the surface of the substrate 1, and the lead electrodes 4 are connection points at which the pressure sensor and other components are electrically connected to each other. For the specific structure of the lead electrode 4, reference may be made to the prior art, and details thereof are not repeated herein.
A lead 5 is disposed between the piezoresistive strip 3 and the lead electrode 4, and the lead 5 is responsible for electrically connecting the lead electrode 4 and the corresponding piezoresistive strip 3. The specific material of the lead 5 can be referred to the prior art, and will not be described herein. Normally, the lead 5 covers a part of the sensitive diaphragm 2, an insulating layer is usually disposed on the surface of the sensitive diaphragm 2 where the surface of the sensitive diaphragm 2 is not in contact with the piezoresistive strips 3, and the lead 5 is disposed on the surface of the insulating layer, i.e., an insulating layer is usually disposed between the lead 5 and the sensitive diaphragm 2 to prevent the lead 5 and the sensitive diaphragm 2 from directly forming a loop without passing through the piezoresistive strips 3. For the specific material of the insulating layer, reference may be made to the prior art, and further description thereof is omitted here.
The pressure sensor provided by the embodiment of the invention comprises a circular sensitive diaphragm 2 and four piezoresistive strips 3 which are contacted with the sensitive diaphragm 2, wherein the four piezoresistive strips 3 are all positioned at the edge area of the sensitive diaphragm 2; wherein the edge region is a region corresponding to stress of the pressure sensor not less than 90% of the stress peak. The sensitive membrane 2 is circular, so that the stress linearity of the edge area of the sensitive membrane 2 is greatly improved; when the sensitive membrane 2 is deformed, the stress is mainly concentrated in the above-mentioned edge region. When the piezoresistive strips 3 are arranged in the edge area, the resistance change range of the piezoresistive strips 3 in the working state can be effectively increased, so that the pressure sensor has higher output voltage.
The detailed structure of the pressure sensor provided by the present invention will be described in detail in the following embodiments of the present invention.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a specific pressure sensor according to an embodiment of the present invention.
The present invention is different from the above-described embodiments, and the present invention further specifically limits the structure of the pressure sensor on the basis of the above-described embodiments. The rest of the contents are already described in detail in the above embodiments of the present invention, and are not described herein again.
Referring to fig. 2, in the embodiment of the present invention, the substrate 1 is specifically a silicon carbide substrate 1. Compared with the silicon-based substrate 1 in the prior art, silicon carbide (SiC) has more excellent physicochemical characteristics, for example, has higher stability in severe environments such as high temperature (more than 500 ℃), strong corrosion, strong radiation and the like, so that the pressure sensor provided with the silicon carbide substrate 1 can work in severe environments. More specifically, the 4H — SiC substrate 1 may be selected as the substrate 1 in the pressure sensor in the embodiment of the present invention. 4H-SiC, which is a polytype of SiC, is inexpensive and can be efficiently formed in an ingot state, thereby producing the above-described substrate 1.
When the substrate 1 is a 4H — SiC substrate 1, the material of the sensitive diaphragm 2 is usually 4H — SiC. It should be noted that, since the wafer surface (i.e., [0001] silicon surface) of 4H — SiC is isotropic, this provides good conditions for various design requirements, and the position of the piezoresistive strip 3 on the surface of the sensitive diaphragm 2 can be flexibly adjusted during design without causing failure of the pressure sensor.
In an embodiment of the present invention, in order to increase the output voltage of the pressure sensor as much as possible, the longitudinal piezoresistance 32 can cross the edge of the sensitive membrane 2. Normally, the piezoresistive strip 3 needs to be in contact with the sensitive membrane 2, but the piezoresistive strip 3 need not be completely arranged on the surface of the sensitive membrane 2, but may be only partially arranged on the surface of the sensitive membrane 2. In the embodiment of the present invention, the longitudinal piezoresistors 32 are disposed across the edge of the sensitive membrane 2, i.e., one end of the longitudinal piezoresistors 32 is located at the edge region of the surface of the sensitive membrane 2, and the other end of the longitudinal piezoresistors 32 is located at the edge region of the surface of the substrate 1, so that the longitudinal piezoresistors 32 cover the edge of the sensitive membrane 2. When the sensitive membrane 2 deforms, the maximum value of the stress is located at the edge of the sensitive membrane 2, so that the longitudinal piezoresistance 32 crosses the edge of the sensitive membrane 2, the deformation of the longitudinal piezoresistance 32 corresponds to the maximum value of the stress of the sensitive membrane 2, and the output voltage of the pressure sensor is improved as much as possible.
It should be noted that, since the distance between the outer boundary of the edge region and the edge of the sensitive membrane 2 is smaller than the distance between the inner boundary of the edge region and the edge of the sensitive membrane 2, the length of the longitudinal pressure resistor 32 on the surface of the sensitive membrane 2 is usually larger than the length of the longitudinal pressure resistor 32 on the surface of the substrate 1. Whereas the transverse piezoresistors 31 are usually located entirely in the edge regions of the surface of the sensitive membrane 2, the distance between the transverse piezoresistors 31 and the edge of the sensitive membrane 2 is usually about 10 μm at the maximum.
In the present embodiment, the transverse piezoresistors 31 are generally linear, and the longitudinal piezoresistors 32 are generally U-shaped, for the convenience of designing the lead 5, and for reducing the stress span of the piezoresistive strips 3. The U-shaped piezoresistive strip 3 is a piezoresistive strip 3 formed by electrically connecting two opposite ends of two parallel and short piezoresistive strips 3 to each other by a lead 5. Since the stress of the sensitive membrane 2 is distributed along the radius of the sensitive membrane 2 in the normal case, designing the transverse piezoresistors 31 to be linear and the longitudinal piezoresistors 32 to be U-shaped can effectively reduce the stress span of the piezoresistive strips 3.
In the embodiment of the present invention, in order to ensure the overall performance and the measurement accuracy of the pressure sensor, the two transverse piezoresistors 31 are distributed along the center of the sensitive membrane 2 in a centrosymmetric manner; the two longitudinal piezoresistors 32 are distributed along the center of the sensitive membrane 2 in a centrosymmetric way; and the distances between adjacent piezoresistive strips 3 are equal.
The piezoresistive strips 3 are arranged in the above manner, so that the environment of any transverse piezoresistor 31 or longitudinal piezoresistor 32 is basically consistent, and the overall performance and the measurement accuracy of the pressure sensor are ensured. It should be noted that the transverse piezoresistors 31 and the longitudinal piezoresistors 32 have an adjacent relationship, while the two transverse piezoresistors 31 and the two longitudinal piezoresistors 32 do not have an adjacent relationship, but only have an opposite relationship, and are opposite to each other with respect to the center of the sensitive diaphragm 2.
In the embodiment of the present invention, the lead electrodes 4 are usually located at the edge of the substrate 1 in order to facilitate electrical connection of other components with the pressure sensor and avoid interference of the lead electrodes 4 on the sensitive membrane 2. It will be appreciated that the cavity described above, and the sensitive membrane 2 spanning it, is generally centrally disposed on the substrate 1. In order to further facilitate electrical connection between other components and the pressure sensor, in the embodiment of the present invention, the lead electrodes 4 are arranged along the edge of the substrate 1, so that the lead electrodes 4 and the sensitive membrane 2 have a sufficient distance therebetween, and at the same time, the lead electrodes 4 have a sufficient space around them to be electrically connected to other devices.
Since the nature of the pressure sensor is to detect the pressure by measuring the change in the resistance value of the piezoresistive strip 3, in order to reduce the influence of the resistance of the lead 5 on the measurement accuracy of the pressure sensor, it is preferable that the lengths of the lead 5 are equal in the embodiment of the present invention, so as to eliminate the influence of the difference in the resistance value of the lead 5 on the measurement accuracy of the pressure sensor.
According to the pressure sensor provided by the embodiment of the invention, the silicon carbide substrate 1 is used, so that the pressure sensor can work in a severe environment; the output voltage of the pressure sensor can be effectively increased by arranging the longitudinal piezoresistors 32 across the edge of the sensitive membrane 2; the stress span of the piezoresistive strips 3 can be effectively reduced by designing the transverse piezoresistors 31 into linear type and designing the longitudinal piezoresistors 32 into U type; the influence of the difference in the resistance value of the lead 5 itself on the measurement accuracy of the pressure sensor can be eliminated by setting the length of the lead 5 to the same fixed value.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The pressure sensor provided by the invention is described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (10)
1. A pressure sensor, comprising:
a substrate having a cavity;
a circular sensitive membrane located on the surface of the substrate and spanning the cavity;
four piezoresistive strips in contact with the sensitive diaphragm; the four piezoresistive strips are divided into two transverse piezoresistors and two longitudinal piezoresistors, and the piezoresistive strips are located in the edge area of the sensitive membrane; the edge area is an area corresponding to stress of the pressure sensor which is not less than 90% of a stress peak value;
lead electrodes on the surface of the substrate;
a lead electrically connecting the piezoresistive strip with the lead electrode.
2. The pressure sensor of claim 1, wherein the longitudinal piezo-resistance spans the edge of the sensitive diaphragm.
3. The pressure sensor of claim 2, wherein the transverse piezoresistors are linear and the longitudinal piezoresistors are U-shaped.
4. The pressure sensor of claim 1, wherein the two transverse piezoresistors are arranged in a central symmetry along the center of the sensitive diaphragm; the two longitudinal piezoresistors are distributed along the center of the sensitive membrane in a centrosymmetric manner.
5. The pressure sensor of claim 4, wherein the distance between adjacent piezoresistive strips is equal.
6. The pressure sensor of claim 1, wherein the substrate is a silicon carbide substrate.
7. The pressure sensor of claim 1, wherein the lead electrode is located at an edge of the substrate.
8. The pressure sensor of claim 7, wherein the substrate is square and the lead electrodes are arranged along an edge of the substrate.
9. The pressure sensor of claim 8, wherein the leads are all equal in length.
10. The pressure sensor of claim 1, further comprising:
an insulating layer between the sensitive diaphragm and the lead.
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| CN201811296931.5A CN111122026A (en) | 2018-11-01 | 2018-11-01 | Pressure sensor |
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| CN201811296931.5A CN111122026A (en) | 2018-11-01 | 2018-11-01 | Pressure sensor |
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| CN114152369A (en) * | 2020-09-07 | 2022-03-08 | 中国科学院微电子研究所 | MEMS piezoresistive pressure sensor and piezoresistive arrangement method |
| CN114323366A (en) * | 2020-09-30 | 2022-04-12 | 中国科学院微电子研究所 | Method and device for reducing nonlinear error of piezoresistive pressure sensor |
| CN114323366B (en) * | 2020-09-30 | 2023-12-29 | 中国科学院微电子研究所 | Method and device for reducing nonlinear error of piezoresistive pressure sensor |
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