CN105953955A - Embedded piezoresistive micro stress sensor - Google Patents
Embedded piezoresistive micro stress sensor Download PDFInfo
- Publication number
- CN105953955A CN105953955A CN201610550775.5A CN201610550775A CN105953955A CN 105953955 A CN105953955 A CN 105953955A CN 201610550775 A CN201610550775 A CN 201610550775A CN 105953955 A CN105953955 A CN 105953955A
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- Prior art keywords
- stress
- sensing element
- annular structural
- structural part
- stress sensor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/225—Measuring circuits therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention provides an embedded piezoresistive micro stress sensor which is composed of a shell, chip resistors, sensitive elements, printed electrodes and a baseplate. The shell is composed of an annular structural component of which the thickness is 1.8mm and the diameter is 7.8mm and a stainless steel circular film which is fixedly installed at one end of the annular structural component in an embedded way. Diffusion silicon piezoresistive sensitive elements are adopted to act as the sensitive elements. Two sensitive elements are arranged at the central position of the circular film. The other two sensitive elements are arranged at the edge position of the film. According to the designed piezoresistive micro stress sensor, a microelectronic micromechanical technology is adopted so that the flat micro contour of the stress sensor can be realized, and the stress sensor can be conveniently installed in a solid engine to perform interface stress measurement. Besides, the stress sensor has a tension and compression bidirectional measurement function so that the stress sensor can measure compression stress and can also measure tension stress.
Description
Technical field
The present invention relates to pressure drag strain gauge technical field, a kind of embedded pressure drag micro-stress sensor,
By by the measured object of this sensor embedment composite (such as solid engines, boats and ships and aircraft etc.), it is achieved quilt
Survey thing interfacial stress or the test of internal stress.
Background technology
Structural health detection is very important for the safety and reliability of solid engines, in real time, accurately and can
Ability by detection engine damage contributes to the assessment of engine structural integrity, reduces manufacturing cost and avoid occurring
Catastrophic structural accident.Micro-stress sensor can be used for the measured object such as solid engines, boats and ships of composite
With the stress real-time testing of the products such as aircraft, determine and assess quality and the life-span of product, and then to product at full life
Health monitoring and health control is carried out in cycle.
Domestic prison in electromotor health based on ess-strain is in the starting stage in detection technique.Abroad use miniature
Strain gauge technology monitors the stress at solid propellant rocket interface, and applies at full-scale type of production electromotor,
Carry out battlefield transport test.
The domestic strain gauge measured for solid engines interfacial stress does not the most possess the ability of embedding, answers with external
Force transducer compares, and Main Gaps is that state's inner sensor overall dimensions is relatively big, the long-time stability of sensor and reliable
Property do not reach solid engines interfacial stress measure use requirement.
Presently used strain gauge mainly has a kind of form, i.e. semiconductor-type micro-stress sensor, this miniature
Sensor only has Micron Instruments company of the U.S. to produce, and its overall dimensions is diameterThickness 2mm,
For solid engines interfacial stress is measured.And domestic same type of sensor size is relatively big, its a diameter of 15mm is thick
Degree is 5mm, it is impossible to meet the requirement that solid engines interfacial stress is measured.
Summary of the invention
It is an object of the invention to provide a kind of embedded pressure drag micro-stress sensor, its overall dimensions is diameterThickness 1.8mm, for the measurement of solid engines interfacial stress.
The technical scheme is that
Described one embedded pressure drag micro-stress sensor, it is characterised in that: by shell, Chip-R, sensitive unit
Part, print electrode, base plate composition;Described shell is 1.8mm by thickness, the annular structural part of diameter 7.8mm and
Embed the rustless steel circular film composition being fixedly mounted on annular structural part one end;Described sensing element uses diffusion silicon pressure
Resistance sensing element, four sensing elements are sintered in inside circular film, and two of which sensing element is in circular film
Heart position, another two sensing element is in diaphragm edge position;Four sensing element composition Wheatstone bridges;Paster electricity
Resistance, on printing electrode, is printed electrode and is fixed on inside annular structural part, four sensing elements with print electrode common group
Become full-bridge circuit;Base plate embeds and is fixedly mounted on the annular structural part other end, with circular film jointly by annular structural part
Internal closing;Annular structural part sidewall has through wires hole;Four lead-in wires access inside annular structural part, and wherein two are drawn
Alignment Wheatstone bridge provides direct current 5V regulated power supply, another two lead-in wire output transducer sensitive signals.
Beneficial effect
Compared with prior art, the present invention has a characteristic that
(1) at home and abroad, first diffusion silicon piezoresistive effect principle is applied to micro-stress sensor technical field, for
Strain gauge embedment solid engines provides a kind of new technological means, it is possible to achieve solid engines interfacial stress
Measure in real time.
(2) the pressure drag micro-stress sensor of present invention design, uses microelectronics micro mechanical technology i.e. MEMS, real
Show the miniature profile that strain gauge is flat, a diameter ofThickness 1.8mm, can be contained in easily
Solid engines carries out interfacial stress measurement.Owing to sensor is the least, can farthest reduce and solid is sent out
The interference that motivation powder column stress field produces.
(3) there is tension compression bidirectional and measure function, i.e. can measure and press to stress and can measure again and pull to stress.
(4) having relatively high overload ability, during i.e. 2 times range overloads, sensor performance does not changes;5 times of ranges
During overload, sensor body is not destroyed.
The additional aspect of the present invention and advantage will part be given in the following description, and part will become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or the additional aspect of the present invention and advantage are from combining the accompanying drawings below description to embodiment and will become
Substantially with easy to understand, wherein:
Fig. 1: micro-stress sensor construction schematic diagram;
Wherein: 1 is shell, 2 is Chip-R, and 3 is sensing element, and 4 is to print electrode, and 5 is base plate.
Detailed description of the invention
Embodiments of the invention are described below in detail, and described embodiment is exemplary, it is intended to be used for explaining the present invention,
And be not considered as limiting the invention.
The present invention is according to the deficiency of existing domestic strain gauge technology, it is provided that a kind of embedded micro based on pressure drag
Strain gauge, for the solid engines interfacial stress or interior embedded or embedment strain gauge volume requirement is small
Portion's stress measurement.
As it is shown in figure 1, the micro-stress sensor entirety of the present invention is a flattened cylinder structure, by shell, patch
Sheet resistance, sensing element, print electrode, base plate composition.Described shell is 1.8mm by thickness, diameter 7.8mm's
Annular structural part and embedding are fixedly mounted on the rustless steel circular film composition of annular structural part one end;Described sensitive unit
Part uses diffusion silicon resistance sensing element of pressure, and four sensing elements are sintered in inside circular film, two of which sensing element
Being in circular film center, another two sensing element is in diaphragm edge position;Four sensing elements composition favour this
Energising bridge.
Rustless steel circular film and four sensing elements constitute the sensing element of micro-stress sensor, circular film
Thickness design according to the range of strain gauge and determine.Diaphragm is implemented forward load, maximum radial drawing stress
Being near its center, maximal compressed stress, near diaphragm edge, is positioned at sensing element near its center
Resistance increases along with the increase of tensile stress, and the resistance being positioned at the sensing element near diaphragm edge is answered along with compressing
The increase of power and reduce.
Chip-R, on printing electrode, prints electrode and is fixed on inside annular structural part, four sensing elements and printing
Electrode collectively constitutes full-bridge circuit;Base plate embeds and is fixedly mounted on the annular structural part other end, jointly will with circular film
Annular structural part is internal to be closed;Annular structural part sidewall has through wires hole;Four lead-in wires access inside annular structural part,
Wherein two lead-in wires provide direct current 5V regulated power supply, another two lead-in wire output transducer sensitive signals to Wheatstone bridge.
When circular film bear pull to or press to load i.e. stress time, simultaneously provide direct current 5V voltage stabilizing to Wheatstone bridge
Power supply, electric bridge will produce the d. c. voltage signal of millivolt level, and this voltage signal is linear with plus load, therefore
Strain gauge can record tested stress value.
During application, use micro-stress sensor as a sensing element, be embedded in solid engines, it is achieved
Solid engines interfacial stress is measured, according to strain measurements, can differentiate propellant charge whether crack or
Unsticking, reaches the purpose of solid engines health prison detection.
Although above it has been shown and described that embodiments of the invention, it is to be understood that above-described embodiment is example
Property, it is impossible to be interpreted as limitation of the present invention, those of ordinary skill in the art without departing from the present invention principle and
Above-described embodiment can be changed within the scope of the invention in the case of objective, revise, replace and modification.
Claims (1)
1. an embedded pressure drag micro-stress sensor, it is characterised in that: by shell, Chip-R, sensing element,
Print electrode, base plate forms;Described shell is 1.8mm by thickness, the annular structural part of diameter 7.8mm and
Embed the rustless steel circular film composition being fixedly mounted on annular structural part one end;Described sensing element uses diffusion
Silicon resistance sensing element of pressure, four sensing elements are sintered in inside circular film, and two of which sensing element is in circle
Shape its center position, another two sensing element is in diaphragm edge position;Four sensing element composition favour stones
Electric bridge;Chip-R, on printing electrode, prints electrode and is fixed on inside annular structural part, four sensing elements
Full-bridge circuit is collectively constituted with printing electrode;Base plate embeds and is fixedly mounted on the annular structural part other end, with circle
Diaphragm is closed internal for annular structural part jointly;Annular structural part sidewall has through wires hole;Four lead-in wire access rings
Inside shape structural member, wherein two lead-in wires provide direct current 5V regulated power supply to Wheatstone bridge, and another two lead-in wires are defeated
Go out sensor sensing signal.
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CN201610550775.5A CN105953955A (en) | 2016-07-13 | 2016-07-13 | Embedded piezoresistive micro stress sensor |
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CN201610550775.5A CN105953955A (en) | 2016-07-13 | 2016-07-13 | Embedded piezoresistive micro stress sensor |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107044914A (en) * | 2017-03-16 | 2017-08-15 | 中国人民解放军海军航空工程学院 | Solid engines bonding interface loaded state supervises detection means |
CN110207860A (en) * | 2019-06-13 | 2019-09-06 | 内蒙动力机械研究所 | A kind of solid propellant rocket bonding interface just/monitoring device of shear stress |
CN111122026A (en) * | 2018-11-01 | 2020-05-08 | 中科院微电子研究所昆山分所 | Pressure sensor |
CN111256888A (en) * | 2020-03-02 | 2020-06-09 | 吉林大学 | Bionic multilevel structure flexible stress and strain combined sensor and preparation method thereof |
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CN1215157A (en) * | 1998-10-31 | 1999-04-28 | 中国科学院合肥智能机械研究所 | Thick film micropressure sensor and making method thereof |
CN101349602A (en) * | 2008-09-12 | 2009-01-21 | 中国电子科技集团公司第四十九研究所 | High doping point electrode SOI piezoresistance type pressure sensor and manufacturing method thereof |
US20140123771A1 (en) * | 2006-04-26 | 2014-05-08 | Nora Kurtz | Pressure transducer utilizing non-lead containing frit |
CN203595580U (en) * | 2013-12-04 | 2014-05-14 | 淄博纳泰微系统传感有限公司 | Dedicated housing of diffusion silicon pressure sensor |
CN204128719U (en) * | 2014-09-28 | 2015-01-28 | 缪建民 | High sensitivity silicon piezoresistive pressure sensor |
CN104931163A (en) * | 2015-06-24 | 2015-09-23 | 无锡芯感智半导体有限公司 | Dual-SOI-structured MEMS pressure sensor chip and manufacturing method thereof |
-
2016
- 2016-07-13 CN CN201610550775.5A patent/CN105953955A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1215157A (en) * | 1998-10-31 | 1999-04-28 | 中国科学院合肥智能机械研究所 | Thick film micropressure sensor and making method thereof |
US20140123771A1 (en) * | 2006-04-26 | 2014-05-08 | Nora Kurtz | Pressure transducer utilizing non-lead containing frit |
CN101349602A (en) * | 2008-09-12 | 2009-01-21 | 中国电子科技集团公司第四十九研究所 | High doping point electrode SOI piezoresistance type pressure sensor and manufacturing method thereof |
CN203595580U (en) * | 2013-12-04 | 2014-05-14 | 淄博纳泰微系统传感有限公司 | Dedicated housing of diffusion silicon pressure sensor |
CN204128719U (en) * | 2014-09-28 | 2015-01-28 | 缪建民 | High sensitivity silicon piezoresistive pressure sensor |
CN104931163A (en) * | 2015-06-24 | 2015-09-23 | 无锡芯感智半导体有限公司 | Dual-SOI-structured MEMS pressure sensor chip and manufacturing method thereof |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107044914A (en) * | 2017-03-16 | 2017-08-15 | 中国人民解放军海军航空工程学院 | Solid engines bonding interface loaded state supervises detection means |
CN111122026A (en) * | 2018-11-01 | 2020-05-08 | 中科院微电子研究所昆山分所 | Pressure sensor |
CN110207860A (en) * | 2019-06-13 | 2019-09-06 | 内蒙动力机械研究所 | A kind of solid propellant rocket bonding interface just/monitoring device of shear stress |
CN110207860B (en) * | 2019-06-13 | 2022-05-03 | 内蒙动力机械研究所 | Monitoring device for normal/shear stress of bonding interface of solid rocket engine |
CN111256888A (en) * | 2020-03-02 | 2020-06-09 | 吉林大学 | Bionic multilevel structure flexible stress and strain combined sensor and preparation method thereof |
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