CN114152369A - MEMS piezoresistive pressure sensor and piezoresistive arrangement method - Google Patents

MEMS piezoresistive pressure sensor and piezoresistive arrangement method Download PDF

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Publication number
CN114152369A
CN114152369A CN202010929675.XA CN202010929675A CN114152369A CN 114152369 A CN114152369 A CN 114152369A CN 202010929675 A CN202010929675 A CN 202010929675A CN 114152369 A CN114152369 A CN 114152369A
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resistor
type
stress
pressure sensing
sensing film
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CN114152369B (en
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李婷
尚海平
王玮冰
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors

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  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

The invention relates to the technical field of pressure sensors, in particular to an MEMS piezoresistive pressure sensor and a piezoresistive arrangement method, wherein the MEMS piezoresistive pressure sensor comprises the following components: a pressure-sensitive film; two first type resistors and two second type resistors on the pressure sensing film; the first type of resistor and the second type of resistor are arranged at the edge of the pressure sensing film to form a Wheatstone bridge; and a stress difference exists between a first stress at a first position where the first type of resistor is located and a second stress at a second position where the second type of resistor is located, and further, the introduced circuit nonlinearly compensates the original nonlinearity through the asymmetric positions of the first type of resistor and the second type of resistor, namely, the positions with proper difference in stress magnitude under the same pressure, so that the linearity of the MEMS piezoresistive pressure sensor is improved.

Description

MEMS piezoresistive pressure sensor and piezoresistive arrangement method
Technical Field
The invention relates to the technical field of pressure sensors, in particular to an MEMS piezoresistive pressure sensor and a piezoresistive arrangement method.
Background
MEMS piezoresistive pressure sensors have been widely used in various fields such as industrial control, aerospace, marine, military, and biomedical applications. The piezoresistive pressure sensor mainly utilizes the piezoresistive effect of a semiconductor, namely, the resistivity changes under the action of pressure.
The working principle of the piezoresistive pressure sensor is as follows: the thin film is deformed to generate stress by applying pressure, so that the size of the piezoresistor is changed, and the output voltage of the Wheatstone bridge is also changed, thereby obtaining an output signal which is changed along with the pressure.
The nonlinearity is one of the important indexes of the pressure sensor, is a main source of basic errors, and influences the precision and the accuracy of the pressure sensor. At present, the sources of the nonlinearity mainly include geometric nonlinearity, physical nonlinearity and circuit nonlinearity, the geometric nonlinearity is originated from balloon effect, the nonlinearity between stress and pressure is caused by large-disturbance deformation of the diaphragm, and the nonlinearity can be reduced by improving the shape, the size, the structure and the like of the pressure sensing diaphragm. The physical nonlinearity is mainly nonlinearity of piezoresistive effect itself, nonlinearity generated by the change of energy band structure due to the deformation of crystal lattice caused by pressure, anisotropy, and influence of doping concentration and temperature. The circuit nonlinearity is mainly caused by asymmetrical electrical parameters of bridge arms of the bridge due to uneven doping, process errors in resistor strip etching and the like, and the influence can be reduced by optimizing the shape, size, spacing and the like of the resistor strips according to process requirements.
Disclosure of Invention
In view of the above, the present invention has been developed to provide a MEMS piezoresistive pressure sensor and a piezoresistive arrangement that overcome, or at least partially address, the above-mentioned problems.
In a first aspect, the present invention provides a MEMS piezoresistive pressure sensor comprising:
the pressure sensing film is square;
the long sides of the first resistors are perpendicular to the first side of the pressure sensing film, the long sides of the second resistors are parallel to the second side of the pressure sensing film, and the first side and the second side are the same or different;
the first type of resistor and the second type of resistor are arranged at the edge of the pressure sensing film to form a Wheatstone bridge;
and a stress difference exists between a first stress at a first position where the first type of resistor is located and a second stress at a second position where the second type of resistor is located.
Further, the pressure-sensitive film is gradually increased in stress from the middle position to the edge position.
Further, if the stress at the position of the first type of resistor on the pressure sensing film is equal to the stress at the position of the second type of resistor on the pressure sensing film, so that the output-pressure curve is a concave curve, the first position of the first type of resistor and the second position of the second type of resistor are adjusted to make the first stress greater than the second stress, so that the non-linear error is reduced.
Further, if the stress at the position of the first type of resistor on the pressure sensing film is equal to the stress at the position of the second type of resistor on the pressure sensing film, so that the output-pressure curve is a convex curve, the first position of the first type of resistor and the second position of the second type of resistor are adjusted to make the first stress smaller than the second stress, so that the non-linear error is reduced.
Further, the stress difference ranges from-0.5P to 0.5P, where P is the pressure applied to the pressure sensing film.
In a second aspect, the present invention also provides a MEMS piezoresistive pressure sensor comprising:
the pressure sensing film is circular;
the long edge of the first resistor is perpendicular to a first tangent line of the pressure sensing film edge, the long edge of the second resistor is parallel to a second tangent line of the pressure sensing film edge, the first tangent line and the second tangent line are any tangent lines on the circular pressure sensing film, and the first tangent line and the second tangent line are the same tangent line or different tangent lines;
the first type of resistor and the second type of resistor are arranged at the edge of the pressure sensing film to form a Wheatstone bridge;
and a stress difference exists between a first stress at a first position where the first type of resistor is located and a second stress at a second position where the second type of resistor is located.
Further, the stress difference ranges from-0.5P to 0.5P, where P is the pressure applied to the pressure sensing film.
Further, the pressure-sensitive film is gradually increased in stress from the middle position to the edge position.
In a third aspect, the present invention further provides a method for arranging piezoresistors of a MEMS piezoresistive pressure sensor, comprising:
arranging two first resistors and two second resistors on a square pressure sensing film, wherein the long edge of each first resistor is perpendicular to the first edge of the pressure sensing film, the long edge of each second resistor is parallel to the second edge of the pressure sensing film, and the first edge and the second edge are the same or different;
the first type of resistor and the second type of resistor are arranged at the edge of the pressure sensing film to form a Wheatstone bridge;
arranging a first position of the first type of resistor on the pressure sensing film and a second position of the second type of resistor on the pressure sensing film such that a stress difference exists between a first stress at the first position and a second stress at the second position.
In a fourth aspect, the present invention further provides a method for arranging piezoresistors of a MEMS piezoresistive pressure sensor, comprising:
the method comprises the steps that two first resistors and two second resistors are arranged on a circular pressure sensing film, the long edge of each first resistor is perpendicular to a first tangent line of the pressure sensing film, the long edge of each second resistor is parallel to a second tangent line of the pressure sensing film, the first tangent line and the second tangent line are any tangent lines on the circular pressure sensing film, and the first tangent line and the second tangent line are the same tangent line or different tangent lines;
the first type of resistor and the second type of resistor are arranged at the edge of the pressure sensing film to form a Wheatstone bridge;
arranging a first position of the first type of resistor on the pressure sensing film and a second position of the second type of resistor on the pressure sensing film such that a stress difference exists between a first stress at the first position and a second stress at the second position.
One or more technical solutions in the embodiments of the present invention have at least the following technical effects or advantages:
the invention provides an MEMS piezoresistive pressure sensor which comprises a pressure sensing film, two first resistors and two second resistors, wherein the two first resistors and the two second resistors are positioned on the pressure sensing film; the first type of resistor and the second type of resistor are arranged at the edge of the pressure sensing film to form a Wheatstone bridge; stress difference exists between first stress of a first position where the first type of resistor is located and second stress of a second position where the second type of resistor is located, and further the introduced circuit nonlinearly compensates original nonlinearity through stress asymmetric positions of the first type of resistor and the second type of resistor, namely positions with proper difference in stress magnitude under the same pressure, so that the linearity of the MEMS piezoresistive pressure sensor is improved.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a schematic diagram of the resistor arrangement of a MEMS piezoresistive pressure sensor according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a Wheatstone bridge according to an embodiment of the invention;
FIG. 3 is a schematic diagram showing a concave output-pressure curve according to a first embodiment of the present invention;
FIG. 4 is a schematic diagram showing a convex output-pressure curve according to a first embodiment of the present invention;
FIG. 5 is a schematic diagram of another resistor arrangement on a square pressure sensing film according to one embodiment of the present invention;
FIG. 6 is a schematic diagram showing the arrangement of resistors on a circular pressure sensing film according to the second embodiment of the present invention;
FIG. 7 is a schematic diagram showing another arrangement of resistors on a circular pressure sensing film according to the second embodiment of the present invention;
FIG. 8 is a flow chart illustrating the steps of a method for arranging the piezoresistors of the MEMS piezoresistive pressure sensor according to the third embodiment of the invention;
fig. 9 is a flow chart illustrating the steps of a method for applying a piezoresistive row of another MEMS piezoresistive pressure sensor according to a fourth embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
Example one
An embodiment of the present invention provides an MEMS piezoresistive pressure sensor, as shown in fig. 1, including: a pressure-sensitive film 101, the pressure-sensitive film 101 having a square shape.
The two first-type resistors 102 and the two second-type resistors 103 are positioned on the pressure sensing film 101, long sides of the first-type resistors 102 are perpendicular to a first side A of the pressure sensing film 101, long sides of the second-type resistors 103 are parallel to a second side B of the pressure sensing film, and the first side A and the second side B are the same side or different sides.
The first type of resistor 102 and the second type of resistor 103 are arranged at the edge of the pressure sensing film 101 to form a Wheatstone bridge.
There is a stress difference between a first stress at a first location where the first type of resistor 102 is located and a second stress at a second location where the second type of resistor 103 is located.
The first type of resistor 102 and the second type of resistor 103 are arranged at stress asymmetric positions on the pressure sensing film 101, so that the introduced circuit nonlinearity can compensate the original nonlinearity, and the linearity of the MEMS piezoresistive pressure sensor is improved.
In a specific embodiment, taking a square pressure sensing film as an example, the two first type resistors 102 and the two second type resistors 103 are connected to form a wheatstone bridge. As shown in fig. 2, the pressure sensor indirectly measures a non-electrical quantity and pressure by measuring an output voltage value by the wheatstone bridge formed by the piezoresistors, thereby realizing the function of the MEMS piezoresistive pressure sensor.
On the square pressure sensing film 101, if the first side a and the second side B are different sides, that is, adjacent sides, two first type resistors 102 and two second type resistors 103 are alternately arranged at the edge of the square pressure sensing film 101, so as to form the structure shown in fig. 1.
If the first side a and the second side B are the same side on the square pressure sensing film 101, the two first resistors 102 and the two second resistors 103 are both located on the same side of the square pressure sensing film 101, and the structure shown in fig. 5 is formed.
Of course, if the first side a and the second side B are different sides, that is, opposite sides, on the square pressure sensing film 101, the two first resistors 102 and the two second resistors 103 are respectively located at the edges of the two opposite sides, which is not shown in the figure.
Of course, the square pressure sensing membrane may also be rectangular, and is not shown in the drawings. When the first side a and the second side B are adjacent sides, the first type of resistor 102 is located at the long side edge of the rectangular pressure sensing film, and the second type of resistor 102 is located at the short side edge of the rectangular pressure sensing film, or the first type of resistor 101 is located at the short side edge of the rectangular pressure sensing film, and the second type of resistor 102 is located at the long side edge of the rectangular pressure sensing film.
When the first side a and the second side B are the same side, the first type resistor 102 and the second type resistor 103 are both located at the same long side edge of the rectangular pressure sensing film or at the same short side edge of the rectangular pressure sensing film.
When the first side a and the second side B are opposite sides, the first type resistor 102 and the second type resistor 103 are both located at opposite long side edges of the rectangular pressure sensing film or are both located at opposite short side edges of the rectangular pressure sensing film.
When the same pressure is applied to the pressure sensing film 101, the pressure sensing film is located at different positions, and the stress is different.
The stress at the position corresponding to the edge of the pressure-sensitive film having the center-symmetric pattern is substantially the same, and the stress gradually increases from the center of the pressure-sensitive film 101 to the edge. Therefore, the stress is maximized near the edge of the pressure-sensitive film.
For a rectangular pressure sensing film, the stress is greater at the center of the long side than at the center of the short side.
In an alternative embodiment, if the stress at the position of the first type resistor 102 on the pressure sensing film is equal to the stress at the position of the second type resistor 103 on the pressure sensing film, so that the output-pressure curve is a concave curve, the first position of the first type resistor 102 and the second position of the second type resistor 103 are adjusted, so that the first stress is greater than the second stress, and the non-linearity error is reduced.
When the stress at the position of the first type of resistor on the pressure sensing film is equal to the second stress at the position of the second type of resistor on the pressure sensing film, so that the output-pressure curve is a concave curve, as shown in fig. 3, it is illustrated that the curve of the output pressure value is not linear with the variation of the applied pressure, i.e. the difference between the actual output value of the pressure and the ideal linear pressure output value is negative. At this time, the first stress is greater than the second stress by adjusting the first position of the first type resistor 102 and the second position of the second type resistor 103, so that the non-linear error is reduced. Namely, the linearity of the MEMS piezoresistive pressure sensor is improved by adjusting the positions of the first type resistor 102 and the second type resistor 103 on the pressure sensing film 101, so that the introduced circuit nonlinearity compensates the original nonlinearity.
In an optional implementation manner, if the stresses at the positions of the first type of resistor on the pressure sensing film and the second type of resistor on the pressure sensing film are equal, so that the output-pressure curve is a convex curve, the first position where the first type of resistor is located and the second position where the second type of resistor is located are adjusted, so that the first stress is smaller than the second stress, and the nonlinear error is reduced.
When the stress of the first type of resistor at the position on the pressure sensing film is equal to the stress of the second type of resistor at the position on the pressure sensing film, so that the output-pressure curve is a convex curve, as shown in fig. 4, it is illustrated that the curve of the output pressure value is not linear along with the change of the applied pressure, that is, the difference between the actual pressure output value and the ideal linear pressure output value is positive, at this time, the first stress is smaller than the second stress by adjusting the first position of the first type of resistor 102 and the second position of the second type of resistor 103, that is, the introduced circuit nonlinearity compensates the original nonlinearity by adjusting the positions of the first type of resistor 102 and the second type of resistor 103 on the pressure sensing film 101, so as to improve the linearity of the MEMS piezoresistive pressure sensor.
The first type resistor 102 and the second type resistor 103 may be arranged inside the edge of the film, or outside the film, or across the edge.
As the span of the pressure sensor increases, i.e., the size of the pressure sensing diaphragm decreases or the thickness increases, the required stress difference is greater when optimizing the linearity of the sensor.
The range of the sensor is determined by the thickness and the size of the pressure sensing film 101, and the range of the sensor is increased along with the reduction of the size of the pressure sensing film and the increase of the thickness of the film, and accordingly, the stress difference required for compensating nonlinearity is also increased, so that the stress difference between the first stress and the second stress is increased by adjusting the first position where the first type of resistor is located and the second position where the second type of resistor is located, the original nonlinearity is compensated for by the circuit nonlinearity generated by the stress difference, and the linearity of the MEMS piezoresistive sensor is improved.
When the pressure-sensitive film 101 is square, the pressure-sensitive film size means the side length.
The stress difference exists between the first stress of the first position where the first type resistor 102 is located and the second stress of the second position where the second type resistor 103 is located, and the range of the stress difference is-0.5P, wherein P is applied pressure. So as to adjust the first position of the first type resistor 102 and the second position of the second type resistor 103 within the stress difference range.
Specifically, the substrate is N-type Si; the sensor has a full scale of 120MPa, and is formed by doping four P-type Si piezoresistors, namely two first-type resistors 102 and two second-type resistors 103, on a pressure sensing film 101, wherein the side length of the pressure sensing film 101 is 272 microns, the thickness of the pressure sensing film is 160 microns, and wet etching is adopted on the pressure sensing film 101. The size of these resistors is 18 μm by 5 μm. The four piezoresistors are connected to form a Wheatstone bridge.
The stresses at the positions of the first type resistor 102 and the second type resistor 103 have a stress difference, and it is assumed that the stress at the first position of the first type resistor 102 is Tl＝klP, the stress of the second position where the second type resistor 103 is positioned is Tt＝ktP, and kl＝kt+ Δ k, where TlIs a first stress, T, of a first location where the first type of resistor 102 is locatedtIs a second stress at a second position where the second type of resistor 103 is located, P is a pressure applied to the pressure sensing film 101, klRespectively, a parameter, k, related to the variation of stress with applied pressure at the position of the first type of resistortIs a parameter related to the variation of stress with applied pressure at the location of the second type of resistor. When the value of delta k is between-0.5 and +0.5, the linearity of the pressure sensor can be improved. E.g. kl＝0.48，ktWhen the value is 0.37, the nonlinear error of the pressure sensor in simulation can reach 10-6Magnitude.
One or more technical solutions in the embodiments of the present invention have at least the following technical effects or advantages:
the invention provides an MEMS piezoresistive pressure sensor which comprises a pressure sensing film, two first resistors and two second resistors, wherein the two first resistors and the two second resistors are positioned on the pressure sensing film; the first type of resistor and the second type of resistor are arranged at the edge of the pressure sensing film to form a Wheatstone bridge; the stress difference exists between the first stress of the first position where the first type of resistor is located and the second stress of the second position where the second type of resistor is located, and further the introduced circuit nonlinearly compensates the original nonlinearity through the asymmetric positions of the first type of resistor and the second type of resistor, namely the positions with proper difference in stress magnitude under the same pressure, so that the linearity of the MEMS piezoresistive pressure sensor is improved.
Example two
Based on the same inventive concept, the present invention provides a MEMS piezoresistive pressure sensor, as shown in fig. 6, comprising:
the pressure sensing film 601 is circular;
the two first resistors 602 and the two second resistors 603 are positioned on the pressure sensing film 601, the long edge of the first resistor 602 is perpendicular to a first tangent line C of the pressure sensing film, the long edge of the second resistor 603 is parallel to a second tangent line D of the pressure sensing film, the first tangent line C and the second tangent line D are any tangent lines on the circular pressure sensing film 601, and the first tangent line C and the second tangent line D are the same tangent line or different tangent lines;
the first type of resistor 602 and the second type of resistor 603 are arranged at the edge of the pressure sensing film 601 to form a Wheatstone bridge;
there is a stress difference between a first stress at a first location where the first type of resistor 602 is located and a second stress at a second location where the second type of resistor 603 is located.
Specifically, on the circular pressure sensing film 601, if the first tangent line C and the second tangent line D are different tangent lines and the first tangent line C is perpendicular to the second tangent line D, the two first resistors 602 and the two second resistors 603 are alternately arranged at the edge of the circular pressure sensing film 601, so as to form the structure shown in fig. 6.
If the first tangent line C and the second tangent line D are the same tangent line, the two first resistors 602 and the two second resistors are located at the same position of the circular pressure sensing film 601, forming the structure shown in fig. 7.
Of course, when the first tangent line C and the second tangent line D are different tangent lines, the first type resistor 602 and the second resistor 603 may be located at any edge position on the circular pressure sensing film 601, and at this time, the first tangent line C and the second tangent line D may form any angle. And will not be described in detail herein.
In an alternative embodiment, the pressure sensing membrane 601 has a gradual increase in stress from the center position to the edge position. The stress is greatest near the edge of the pressure-sensitive film.
In an alternative embodiment, if the stress at the position of the first type resistor 602 on the pressure sensing film 601 is equal to the stress at the position of the second type resistor 603 on the pressure sensing film 601, so that the output-pressure curve is a concave curve, the first position where the first type resistor 602 is located and the second position where the second type resistor 603 is located are adjusted, so that the first stress is greater than the second stress, and the non-linearity error is reduced.
In an alternative embodiment, if the stress at the position of the first type resistor 602 on the pressure sensing film 601 is equal to the stress at the position of the second type resistor 603 on the pressure sensing film 601, so that the output-pressure curve is a convex curve, the first position where the first type resistor 602 is located and the second position where the second type resistor 603 is located are adjusted, so that the first stress is smaller than the second stress, and the non-linearity error is reduced.
In an alternative embodiment, the stress difference ranges from-0.5P to 0.5P, where P is the pressure applied to the pressure sensing film.
EXAMPLE III
Based on the same inventive concept, the present invention provides a method for arranging piezoresistors of a MEMS piezoresistive pressure sensor, as shown in fig. 8, comprising:
s801, set up two first type resistance and two second type resistance on square pressure sensing membrane, the long limit of first type resistance with the place the first limit of pressure sensing membrane is perpendicular, the long limit of second type resistance with the place the second limit of pressure sensing membrane is parallel, first limit with the second limit is the same limit or different limit.
The first type of resistor and the second type of resistor are arranged at the edge of the pressure sensing film to form a Wheatstone bridge.
S802, arranging a first position of the first type of resistor on the pressure sensing film and arranging a second position of the second type of resistor on the pressure sensing film, so that a stress difference exists between a first stress of the first position and a second stress of the second position.
In an alternative embodiment, the pressure sensing diaphragm is stressed progressively from a central position to an edge position.
In an optional implementation manner, if the stress at the position of the first type of resistor on the pressure sensing film is equal to the stress at the position of the second type of resistor on the pressure sensing film, so that the output-pressure curve is a concave curve, the first position where the first type of resistor is located and the second position where the second type of resistor is located are adjusted, so that the first stress is greater than the second stress, and the non-linear error is reduced.
In an optional implementation manner, if the stress at the position of the first type of resistor on the pressure sensing film is equal to the stress at the position of the second type of resistor on the pressure sensing film, so that the output-pressure curve is a convex curve, the first position where the first type of resistor is located and the second position where the second type of resistor is located are adjusted, so that the first stress is smaller than the second stress, and the non-linear error is reduced.
In an alternative embodiment, the stress difference ranges from-0.5P to 0.5P, where P is the pressure applied to the pressure sensing film.
Example four
Based on the same inventive concept, the present invention provides a method for arranging piezoresistors of a MEMS piezoresistive pressure sensor, as shown in fig. 9, comprising:
s901, two first resistors and two second resistors are arranged on a circular pressure sensing film, the long edge of each first resistor is perpendicular to a first tangent line of the pressure sensing film, the long edge of each second resistor is parallel to a second tangent line of the pressure sensing film, the first tangent line and the second tangent line are any tangent lines on the circular pressure sensing film, and the first tangent line and the second tangent line are the same tangent line or different tangent lines.
The first type of resistor and the second type of resistor are arranged at the edge of the pressure sensing film to form a Wheatstone bridge.
S902, arranging a first position of a first type of resistor on the pressure sensing film and arranging a second position of a second type of resistor on the pressure sensing film, so that a stress difference exists between a first stress at the first position and a second stress at the second position.
In an alternative embodiment, the pressure sensing diaphragm is stressed progressively from a central position to an edge position.
In an optional implementation manner, if the stress at the position of the first type of resistor on the pressure sensing film is equal to the stress at the position of the second type of resistor on the pressure sensing film, so that the output-pressure curve is a concave curve, the first position where the first type of resistor is located and the second position where the second type of resistor is located are adjusted, so that the first stress is greater than the second stress, and the non-linear error is reduced.
In an optional implementation manner, if the stress at the position of the first type of resistor on the pressure sensing film is equal to the stress at the position of the second type of resistor on the pressure sensing film, so that the output-pressure curve is a convex curve, the first position where the first type of resistor is located and the second position where the second type of resistor is located are adjusted, so that the first stress is smaller than the second stress, and the non-linear error is reduced.
In an alternative embodiment, the stress difference ranges from-0.5P to 0.5P, where P is the pressure applied to the pressure sensing film.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (10)

1. A MEMS piezoresistive pressure sensor, comprising:
the pressure sensing film is square;
the long sides of the first resistors are perpendicular to the first side of the pressure sensing film, the long sides of the second resistors are parallel to the second side of the pressure sensing film, and the first side and the second side are the same or different;
the first type of resistor and the second type of resistor are arranged at the edge of the pressure sensing film to form a Wheatstone bridge;
and a stress difference exists between a first stress at a first position where the first type of resistor is located and a second stress at a second position where the second type of resistor is located.
2. The MEMS piezoresistive pressure sensor of claim 1, wherein said pressure sensing diaphragm has a gradual increase in stress from a central position to an edge position.
3. The MEMS piezoresistive pressure sensor according to claim 1, wherein if the stress at the position of the first type of resistor on the pressure sensing film is equal to the stress at the position of the second type of resistor on the pressure sensing film, such that the output-pressure curve is a concave curve, the first position at which the first type of resistor is located and the second position at which the second type of resistor is located are adjusted to make the first stress greater than the second stress, such that the non-linearity error is reduced.
4. The MEMS piezoresistive pressure sensor according to claim 1, wherein if the stress at the position of the first type of resistor on the pressure sensing film is equal to the stress at the position of the second type of resistor on the pressure sensing film, such that the output-pressure curve is a convex curve, the first position of the first type of resistor and the second position of the second type of resistor are adjusted to make the first stress smaller than the second stress, such that the non-linearity error is reduced.
5. The MEMS piezoresistive pressure sensor according to claim 1, wherein said stress difference is in the range-0.5P, where P is the pressure exerted on said pressure sensing diaphragm.
6. A MEMS piezoresistive pressure sensor, comprising:
the pressure sensing film is circular;
the long edge of the first resistor is perpendicular to a first tangent line of the pressure sensing film edge, the long edge of the second resistor is parallel to a second tangent line of the pressure sensing film edge, the first tangent line and the second tangent line are any tangent lines on the circular pressure sensing film, and the first tangent line and the second tangent line are the same tangent line or different tangent lines;
the first type of resistor and the second type of resistor are arranged at the edge of the pressure sensing film to form a Wheatstone bridge;
and a stress difference exists between a first stress at a first position where the first type of resistor is located and a second stress at a second position where the second type of resistor is located.
7. The MEMS piezoresistive pressure sensor according to claim 6, wherein said stress difference is in the range-0.5P, where P is the pressure applied to said pressure sensing diaphragm.
8. The MEMS piezoresistive pressure sensor according to claim 6, wherein said pressure sensing diaphragm has a gradual increase in stress from a central position to an edge position.
9. A method of arranging piezoresistors of a MEMS piezoresistive pressure sensor, comprising:
arranging two first resistors and two second resistors on a square pressure sensing film, wherein the long edge of each first resistor is perpendicular to the first edge of the pressure sensing film, the long edge of each second resistor is parallel to the second edge of the pressure sensing film, and the first edge and the second edge are the same or different;
the first type of resistor and the second type of resistor are arranged at the edge of the pressure sensing film to form a Wheatstone bridge;
arranging a first position of the first type of resistor on the pressure sensing film and a second position of the second type of resistor on the pressure sensing film such that a stress difference exists between a first stress at the first position and a second stress at the second position.
10. A method of arranging piezoresistors of a MEMS piezoresistive pressure sensor, comprising:
the method comprises the steps that two first resistors and two second resistors are arranged on a circular pressure sensing film, the long edge of each first resistor is perpendicular to a first tangent line of the pressure sensing film, the long edge of each second resistor is parallel to a second tangent line of the pressure sensing film, the first tangent line and the second tangent line are any tangent lines on the circular pressure sensing film, and the first tangent line and the second tangent line are the same tangent line or different tangent lines;
the first type of resistor and the second type of resistor are arranged at the edge of the pressure sensing film to form a Wheatstone bridge;
arranging a first position of the first type of resistor on the pressure sensing film and a second position of the second type of resistor on the pressure sensing film such that a stress difference exists between a first stress at the first position and a second stress at the second position.
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