CN211947212U - Air inlet pipeline for atomic layer deposition equipment - Google Patents
Air inlet pipeline for atomic layer deposition equipment Download PDFInfo
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- CN211947212U CN211947212U CN202020558467.9U CN202020558467U CN211947212U CN 211947212 U CN211947212 U CN 211947212U CN 202020558467 U CN202020558467 U CN 202020558467U CN 211947212 U CN211947212 U CN 211947212U
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Abstract
The utility model relates to an air inlet pipeline for atomic layer deposition equipment, which comprises a source bottle A, ALD manual valve A, ALD pneumatic valve A, a nitrogen purging valve, a one-way valve A, a one-way valve B, a main pipeline, a reaction chamber, an ALD pneumatic valve B, ALD manual valve B and a source bottle B; the source bottle A, the ALD manual valve and the ALD pneumatic valve are connected to a pipeline A, and the pipeline A is connected with a main pipeline through a one-way stop valve A; the source bottle B and an AlD manual valve B, ALD and an air valve B are connected on a pipeline B, and the pipeline B is connected with a main pipeline through a one-way stop valve B; one end of the main pipeline is connected with the reaction chamber, and the other end of the main pipeline is connected with the nitrogen purging valve. The device has the advantages of reasonable structural design and convenience in operation and use, and can effectively avoid pipeline blockage caused by unclean purging of the precursor and improve the efficiency of processing operation.
Description
Technical Field
The utility model relates to an atomic layer deposition equipment technical field especially relates to a be used for atomic layer deposition equipment air inlet pipe way.
Background
Atomic layer deposition is a method of forming a deposited film by alternately pulsing vapor phase precursors into a reactor and chemisorbing and reacting on a deposition substrate. The first precursor is input to the surface of the base material and held on the surface by chemisorption (saturation adsorption). When the second precursor is introduced into the reactor, the second precursor reacts with the first precursor adsorbed on the surface of the base material. A displacement reaction between the two precursors and the production of corresponding by-products will take place, and until the first precursor on the surface is completely consumed, the reaction will automatically stop and form the desired atomic layer. The reaction is repeated continuously to form the required film on the surface of the substrate.
However, in the existing atomic layer deposition equipment pipeline, because the two precursors are reacted due to the residue of the precursor source, the pipeline blockage cannot be avoided. The utility model discloses just provide based on above-mentioned research background, aim at providing one kind and be used for atomic layer deposition equipment air inlet pipeline in order to overcome above-mentioned defect, satisfy actual design and use needs.
SUMMERY OF THE UTILITY MODEL
The above-mentioned not enough to atomic layer deposition equipment existence among the prior art, the utility model aims to: the utility model provides a be used for atomic layer deposition equipment inlet line, it has that structural design is reasonable, operation convenient to use, can effectively avoid the pipeline to sweep the pipeline that unclean leads to and improve the efficiency of processing operation because of the precursor.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
an air inlet pipeline for an atomic layer deposition device comprises a source bottle A, ALD manual valve A, ALD, a pneumatic valve A, a nitrogen purging valve, a one-way valve A, a one-way valve B, a main pipeline, a reaction chamber, an ALD pneumatic valve B, ALD manual valve B and a source bottle B; the source bottle A, the ALD manual valve and the ALD pneumatic valve are connected to a pipeline A, and the pipeline A is connected with a main pipeline through a one-way stop valve A; the source bottle B and an AlD manual valve B, ALD and an air valve B are connected on a pipeline B, and the pipeline B is connected with a main pipeline through a one-way stop valve B; one end of the main pipeline is connected with the reaction chamber, and the other end of the main pipeline is connected with the nitrogen purging valve.
As a further optimization of the above solution, the ALD manual valve a and the ALD manual valve B are of a type of a manually-opened diaphragm valve, the ALD pneumatic valve a and the ALD pneumatic valve B, and the nitrogen purge valve are of a type of a pneumatically-opened diaphragm valve, and the check valve a and the check valve B are of a type of a check valve that allows fluid to flow in only one direction.
Adopt the utility model discloses a be used for atomic layer deposition equipment air inlet pipeline, its beneficial effect shows: structural design is reasonable, the work efficiency draft, in the air inlet process because check valve A5, check valve B6 makes source bottle A1, the precursor source in source bottle B11 can only get into main line 7 and reacting chamber 8 direction, unable reverse transmission, nitrogen purging only purges main line 7 and reacting chamber 8, be favorable to purging preceding gas source totally, if do not have check valve A5, check valve B6, pipeline between check valve A5 and ALD pneumatic valve A3, pipeline between check valve B6 and ALD pneumatic valve B9, it is difficult to be purged totally, lead to the reaction to cause the jam of pipeline.
Drawings
FIG. 1 is a schematic structural diagram of an air inlet pipeline for an atomic layer deposition apparatus according to the present invention,
Detailed Description
An air inlet pipeline for an atomic layer deposition device comprises a source bottle A1, an ALD manual valve A2, an ALD pneumatic valve A3, a nitrogen purge valve 4, a one-way valve A5, a one-way valve B6, a main pipeline 7, a reaction chamber 8, an ALD pneumatic valve B9, an ALD manual valve B10 and a source bottle B11; the source bottle A, the ALD manual valve and the ALD pneumatic valve are connected to a pipeline A, and the pipeline A is connected with a main pipeline through a one-way stop valve A; the source bottle B and an AlD manual valve B, ALD and an air valve B are connected on a pipeline B, and the pipeline B is connected with a main pipeline through a one-way stop valve B; one end of the main pipeline is connected with the reaction chamber, and the other end of the main pipeline is connected with the nitrogen purging valve.
The type of the ALD manual valve A is a manual switch diaphragm valve, and the specific structure and working parameters are as follows: the aperture is 4mm, the flow coefficient Cv value is 0.3, and the working temperature is 200 ℃;
the ALD pneumatic valve A is a pneumatic switch diaphragm valve, and the specific structure and working parameters are as follows: the pneumatic execution pressure is 80psig, the aperture is 4.1mm, the flow coefficient Cv value is 0.27, and the working temperature is 200 ℃;
the type of the nitrogen purging valve is a pneumatic switch diaphragm valve, and the specific structure and working parameters are as follows: the pneumatic execution pressure is 80psig, the aperture is 4.1mm, the flow coefficient Cv value is 0.27, and the working temperature is 200 ℃;
the type of the check valve A is a check valve with a valve which only allows fluid to flow towards one direction, and the specific structure and working parameters are as follows: the aperture is 4.1mm, the flow coefficient Cv value is 0.27, and the working temperature is 200 ℃;
the type of the check valve B is a check valve with a valve which only allows fluid to flow towards one direction, and the specific structure and working parameters are as follows: the aperture is 4.1mm, the flow coefficient Cv value is 0.27, and the working temperature is 200 ℃;
the ALD pneumatic valve B is a pneumatic switch diaphragm valve, and the specific structure and working parameters are as follows: the pneumatic execution pressure is 80psig, the aperture is 4.1mm, the flow coefficient Cv value is 0.27, and the working temperature is 200 ℃;
the type of the ALD manual valve B is a manual switch diaphragm valve, and the specific structure and working parameters are as follows: the aperture is 4mm, the flow coefficient Cv value is 0.3, and the working temperature is 200 ℃.
Trimethyl aluminum (TMA) is arranged in the source bottle A, and the working parameters of air inlet comprise that the trimethyl aluminum is in a liquid state, reaches a saturated vapor pressure under vacuum to form a gaseous state, and enters a pipeline, wherein the gas pressure is 200 Pa;
the source bottle B is internally provided with water (H)2O), the working parameters of the inlet gas comprise that water is in a liquid state, the saturated vapor pressure is reached under vacuum to form a gas state, and the gas pressure is 300 Pa.
The utility model discloses a be used for atomic layer deposition equipment air inlet pipeline when carrying out film deposition, its theory of operation as follows:
(1) the method comprises the steps of manually opening an ALD manual valve A2 and an ALD manual valve B10, controlling the opening and closing of an ALD pneumatic valve A3 in a pulse mode, enabling a precursor in a source bottle A1 to flow through a one-way valve A5 to enter a main pipeline 7, enabling the precursor to enter a reaction chamber 8 through the main pipeline 7, then opening a nitrogen purge valve 4 for purging, and closing the nitrogen purge valve 4 after purging is completed.
(2) Controlling the opening and closing of an ALD pneumatic valve B9 in a pulse mode, enabling a precursor in a source bottle B11 to flow through a one-way valve B6 to enter a main pipeline 7, enter a reaction chamber 8 through the main pipeline 7, opening a nitrogen purging valve 4 for purging, closing the nitrogen purging valve 4 after purging is completed, and completing a period of reaction;
(3) repeating the steps for multiple times of reaction deposition.
The utility model discloses an among the atomic layer deposition equipment inlet line, check valve A5, check valve B6 makes source bottle A1, precursor source in the source bottle B11 can only get into main line 7 and the 8 directions of reacting chamber, unable reverse transmission, nitrogen purging only sweeps main line 7 and reacting chamber 8, be favorable to sweeping the preceding gas source totally, if there is not check valve A5, check valve B6, pipeline between check valve A5 and ALD pneumatic valve A3, pipeline between check valve B6 and ALD pneumatic valve B9, it is difficult to be swept totally, lead to the reaction to cause the jam of pipeline.
The embodiments described above are intended to facilitate one of ordinary skill in the art to understand and practice the invention. It will be readily apparent to those skilled in the art that various modifications to these embodiments may be made, and the generic principles described herein may be applied to other embodiments without the use of the inventive faculty. Therefore, the present invention is not limited to the embodiments herein, and those skilled in the art should understand that modifications and alterations made without departing from the scope of the present invention are within the protection scope of the present invention.
Claims (2)
1. An air inlet pipeline for an atomic layer deposition device is characterized in that: the device comprises a source bottle A (1), an ALD manual valve A (2), an ALD pneumatic valve A (3), a nitrogen purge valve (4), a one-way valve A (5), a one-way valve B (6), a main pipeline (7), a reaction chamber (8), an ALD pneumatic valve B (9), an ALD manual valve B (10) and a source bottle B (11); the source bottle A and the ALD manual valve A, ALD are connected to a pipeline A, and the pipeline A is connected with a main pipeline through a one-way stop valve A; the source bottle B and an AlD manual valve B, ALD and an air valve B are connected on a pipeline B, and the pipeline B is connected with a main pipeline through a one-way stop valve B; one end of the main pipeline is connected with the reaction chamber, and the other end of the main pipeline is connected with the nitrogen purging valve.
2. The intake line for an atomic layer deposition apparatus according to claim 1, wherein: the ALD manual valve A and the ALD manual valve B are of the type of a manually-switched diaphragm valve, the ALD pneumatic valve A and the ALD pneumatic valve B and the nitrogen purge valve are of the type of a pneumatically-switched diaphragm valve, and the one-way valve A and the one-way valve B are of the type of a one-way valve with valves allowing fluid to flow in one direction only.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202020558467.9U CN211947212U (en) | 2020-04-15 | 2020-04-15 | Air inlet pipeline for atomic layer deposition equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202020558467.9U CN211947212U (en) | 2020-04-15 | 2020-04-15 | Air inlet pipeline for atomic layer deposition equipment |
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| CN211947212U true CN211947212U (en) | 2020-11-17 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115773471A (en) * | 2022-11-24 | 2023-03-10 | 江苏微导纳米科技股份有限公司 | Atomic layer deposition apparatus and method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115773471A (en) * | 2022-11-24 | 2023-03-10 | 江苏微导纳米科技股份有限公司 | Atomic layer deposition apparatus and method thereof |
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