CN102719806B - Deposition apparatus - Google Patents
Deposition apparatus Download PDFInfo
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- CN102719806B CN102719806B CN201210214960.9A CN201210214960A CN102719806B CN 102719806 B CN102719806 B CN 102719806B CN 201210214960 A CN201210214960 A CN 201210214960A CN 102719806 B CN102719806 B CN 102719806B
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- exhaust emission
- emission tube
- inlet pipe
- deposition apparatus
- unimpeded
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Abstract
The invention provides a kind of deposition apparatus, comprise gas reaction chamber, exhaust emission tube and unimpeded inlet pipe, wherein, described exhaust emission tube is connected with described gas reaction chamber, described unimpeded inlet pipe is positioned at the sidewall of described exhaust emission tube, and through with described exhaust emission tube.Exhaust emission tube in deposition apparatus of the present invention not easily blocks, and improves the normal working hours of deposition apparatus, and owing to being incubated exhaust emission tube without the need to continuing, can saving resource, reduce costs.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of deposition apparatus.
Background technology
Existing technique when cvd nitride silicon film, due to silicon nitride (Si
3n
4) film has high specific inductivity and be widely used in field of semiconductor manufacture as dielectric materials, as manufacture flash memory technique in need to form one deck ONO as the dielectric materials between floating grid (FloatingGate) and control gate (ControlGate), in ONO layer, O represents silica membrane, and N represents silicon nitride film.
In addition; silicon nitride film is not easily permeated by oxygen molecule; utilize this advantage; using silicon nitride as cover curtain layer (MaskingLayer); can in field oxide making processes; prevent the active area of crystal column surface (ActiveArea) oxidized, thus play the effect of this active area of protection.
At present, industry is mostly with dichlorosilane (DCS, SiH
2cl
2) and ammonia (NH
3) be reactant, by chemical vapor deposition method (CVD) cvd nitride silicon film, the deposition apparatus of the silicon nitride film being reactant with dichlorosilane and ammonia as shown in Figure 1, comprising: the first inlet pipe 101, second inlet pipe 103, gas reaction chamber 105 and exhaust emission tube 107; Described first inlet pipe 101 is all connected with described gas reaction chamber 105 with the second inlet pipe 103, respectively the dichlorosilane needed for deposition reaction and ammonia are transported to carry out chemical reaction in gas reaction chamber 105, and the silicon nitride film that formation of deposits needs on wafer; Described exhaust emission tube 107 is connected with described gas reaction chamber 105, in order to the by product that deposition reaction produced or unreacted gas Exhaust Gas reaction chamber 105.
When forming silicon nitride film by the deposition apparatus of silicon nitride film in Fig. 1, the temperature in gas reaction chamber 105 need control more than 750 degrees Celsius, and the by product that now reactant gases and reaction produce is gaseous state.But; when the deposition apparatus of silicon nitride film in Fig. 1 is in shutdown or holding state; temperature in gas reaction chamber 105 is down to less than 600 degrees Celsius; when the by product that in gas reaction chamber 105, reaction produces discharges described gas reaction chamber 105 by exhaust emission tube 107; easily condensation in exhaust emission tube 107; forming particulate material sticks on exhaust emission tube 107 inwall; exhaust emission tube 107 is finally caused to block; affect the normal working hours of the deposition apparatus of silicon nitride film, reduce the rate of utilization of the deposition apparatus of silicon nitride film.
In existing technique; block to prevent exhaust emission tube 107; when the deposition apparatus of silicon nitride film is in shutdown or holding state; by being incubated exhaust emission tube 107 the heating zone of 150 to 180 degrees Celsius in exhaust emission tube 107 surface parcel temperature, avoiding reacting the by product produced and condensing in exhaust emission tube 107.But, when the deposition apparatus of silicon nitride film is in shutdown or is standby, need to be incubated described exhaust emission tube 107 by heating zone continuously, cause the deposition apparatus use cost of silicon nitride film higher.
The introduction of the deposition apparatus of more silicon nitride films please refer to the Chinese patent application that publication number is CN1453833A.
Therefore, how to avoid the exhaust emission tube of the deposition apparatus of silicon nitride film to block, improve the normal working hours of the deposition apparatus of silicon nitride film and reduce use cost, just becoming one of those skilled in the art's problem demanding prompt solution.
Summary of the invention
The problem that the present invention solves is to provide a kind of deposition apparatus, prevents the exhaust emission tube of deposition apparatus from blocking, and improves the normal working hours of deposition apparatus, reduces its use cost.
For solving the problem, the invention provides deposition apparatus, comprising gas reaction chamber, exhaust emission tube and unimpeded inlet pipe, wherein, described exhaust emission tube is connected with described gas reaction chamber, and described unimpeded inlet pipe is positioned at the sidewall of described exhaust emission tube, and through with described exhaust emission tube.
Optionally, described unimpeded inlet pipe is near described exhaust emission tube and gas reaction chamber coupling end.
Optionally, described unimpeded inlet pipe and described exhaust emission tube one-body molded.
Optionally, described unimpeded inlet pipe and the mode of connection of the sidewall of described exhaust emission tube are for be socketed or to weld or be threaded.
Optionally, described deposition apparatus also comprises: gas flow monitor or gas flow monitor, and one end of described gas flow monitor or gas flow monitor is connected with the opening of described unimpeded inlet pipe.
Optionally, described deposition apparatus also comprises: gas flow monitor or gas flow monitor, and one end of described gas flow monitor or gas flow monitor is connected with exhaust emission tube, and the other end is connected with unimpeded inlet pipe.
Optionally, described deposition apparatus also comprises: switch block, and one end of described switch block is connected with exhaust emission tube, and the other end is connected with unimpeded inlet pipe.
Optionally, described deposition apparatus also comprises: switch block, and one end of described switch block is connected with the opening of unimpeded inlet pipe.
Optionally, described switch block is valve or connector.
Optionally, described deposition apparatus also comprises: the first inlet pipe and the second inlet pipe, and described first inlet pipe and the second inlet pipe are connected with described gas reaction chamber is through respectively.
Compared with prior art, technical solution of the present invention has the following advantages:
By arranging unimpeded inlet pipe through with it on the sidewall of deposition apparatus exhaust emission tube; when deposition apparatus is in shutdown or holding state; sacrifice gas is passed into exhaust emission tube by unimpeded inlet pipe; the by product that reaction residual in exhaust emission tube is produced is discharged; when preventing deposition apparatus temperature from reducing; residue in the by product that in exhaust emission tube, reaction produces to condense in exhaust emission tube; exhaust emission tube is avoided to block; improve the normal working hours of deposition apparatus, reduce its use cost.
In possibility, at the opening of described unimpeded inlet pipe or be also provided with gas flow monitor or gas flow monitor between gas reaction chamber and exhaust emission tube, monitor or detect to facilitate passing into the flow of sacrificing gas in described unimpeded inlet pipe and control.
In possibility, at the opening of unimpeded inlet pipe or be also provided with switch block between gas reaction chamber and exhaust emission tube, with when deposition apparatus is in normal operating conditions, close unimpeded inlet pipe, economize on resources and the use cost of deposition apparatus.
Accompanying drawing explanation
Fig. 1 is the structural representation of the deposition apparatus of existing silicon nitride film;
Fig. 2 is the structural representation of a deposition apparatus of the present invention embodiment;
Fig. 3 is the structural representation of another embodiment of deposition apparatus of the present invention.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, therefore the present invention is not by the restriction of following public specific embodiment.
Just as described in the background section; when the deposition apparatus of existing silicon nitride film is in shutdown or holding state; residue in the by product Yin Wendu that in its exhaust emission tube, reaction produces reduce and condense; and be attached on exhaust emission tube inwall; finally cause exhaust emission tube to block, affect the normal working hours of the deposition apparatus of silicon nitride film.And the existing DeGrain by preventing exhaust emission tube from blocking in parcel heating zone, exhaust emission tube surface, and cost is higher, is unfavorable for cost control.
Based on above-mentioned defect, the invention provides a kind of deposition apparatus, except comprising gas reaction chamber and exhaust emission tube, also comprise unimpeded inlet pipe; Wherein, described exhaust emission tube is connected with described gas reaction chamber; Described unimpeded inlet pipe is connected with the sidewall of described exhaust emission tube; and make described unimpeded inlet pipe and described exhaust emission tube through; during to be in shutdown or holding state at deposition apparatus, pass into the sacrifice gas of the by product discharge making to react generation in exhaust emission tube to described exhaust emission tube.
When deposition apparatus of the present invention is in shutdown or holding state; sacrifice gas is passed into exhaust emission tube by unimpeded inlet pipe; the by product that in exhaust emission tube, reaction produces is discharged; prevent from residuing in the by product that in exhaust emission tube, reaction produces to condense at exhaust emission tube; exhaust emission tube is avoided to block; improve the normal working hours of deposition apparatus, reduce its use cost.
Below for the deposition apparatus of silicon nitride film, by reference to the accompanying drawings deposition apparatus in the present invention is described in detail.
First embodiment
With reference to figure 2, be the structural representation of a deposition apparatus of the present invention embodiment, comprise: the first inlet pipe 201, second inlet pipe 203, gas reaction chamber 205, exhaust emission tube 207 and unimpeded inlet pipe 211.
In Fig. 2 deposition apparatus, described first inlet pipe 201 is connected with described gas reaction chamber 205 with the second inlet pipe 203, for passing into reactant gases in gas reaction chamber 205; Described exhaust emission tube 207 is connected with described gas reaction chamber 205, in order to the by product that deposition reaction produced or unreacted gas Exhaust Gas reaction chamber 205; Described unimpeded inlet pipe 211 is positioned at the sidewall of described exhaust emission tube 207; and it is through with described exhaust emission tube 207; be suitable for when the deposition apparatus of described silicon nitride film is in shutdown or holding state, pass into the sacrifice gas of the by product discharge making to react generation in exhaust emission tube 207 to described exhaust emission tube 207.
In the present embodiment, described unimpeded inlet pipe 211 can be one-body molded with described exhaust emission tube 207, also can be that the mode by being socketed or welding or being threaded connects.
Described unimpeded inlet pipe 211 is near described exhaust emission tube 207 and gas reaction chamber 205 coupling end.
As preferred embodiment, described unimpeded inlet pipe 211 is arranged near described exhaust emission tube 207 and coupling end place, gas reaction chamber 205, such setting can not drain into again counter for by product in gas reaction chamber 205, and the complete emptying of by product that reaction residual in exhaust emission tube 207 can be produced.
Form silicon nitride film for the deposition apparatus of above-mentioned silicon nitride film, the application and result of deposition apparatus of the present invention is further illustrated.
When the deposition apparatus of described silicon nitride film is in running order, dichlorosilane is passed into gas reaction chamber 205 by described first inlet pipe 201, ammonia is passed into gas reaction chamber 205 by described second inlet pipe 203, and warming temperature is carried out to the deposition apparatus of above-mentioned silicon nitride film, temperature in gas reaction chamber 205 is risen to applicable temperature of reaction, such as 600 ~ 900 ° of С.Described dichlorosilane and ammonia react in gas reaction chamber 205, and the device surface in gas reaction chamber 205 forms silicon nitride film.
When the deposition apparatus of described silicon nitride film is in shutdown or holding state, temperature in described gas reaction chamber 205 is reduced to 600 ° of below С, passing into temperature by described unimpeded inlet pipe 211 to described exhaust emission tube 207 is 150 ~ 180 ° of С, flow is that (slm is the milliliter number of the gas that standard atmosphere pressure per minute passes through to 2 ~ 10slm, namely at normal atmospheric pressure, sacrifice gas (as nitrogen or rare gas element) 1slm=1ml/min), the by product that reaction residual in exhaust emission tube 207 is produced is discharged, avoid reacting the by product produced condense in exhaust emission tube 207 and cause exhaust emission tube 207 to block, improve the deposition apparatus normal working hours of silicon nitride film.
Second embodiment
With reference to figure 3, the structural representation of another embodiment of deposition apparatus of the present invention.In the present embodiment, the deposition apparatus of silicon nitride comprises: the first inlet pipe 301, second inlet pipe 303, gas reaction chamber 305, exhaust emission tube 307, unimpeded inlet pipe 311, gas flow monitor 315 (MFM, MassFlowMeter) and switch block 313.
In the present embodiment, one end of described gas flow monitor 315 is connected with the opening of described unimpeded inlet pipe 311, to monitor the flow of the sacrifice gas being passed into described exhaust emission tube 307 by described unimpeded inlet pipe 311.
Except this embodiment, gas flow monitor (MFC can also be used, MassFlowController) the gas flow monitor 315 in alternate figures 3 is carried out, to monitor and to control the flow of the sacrifice gas being passed into described exhaust emission tube 307 by described unimpeded inlet pipe 311.
In the present embodiment, one end of described switch block 313 is connected with exhaust emission tube 307, the other end is connected with described unimpeded inlet pipe 311, be suitable for controlling opening or closing of described unimpeded inlet pipe 311, with when the deposition apparatus of silicon nitride film is in running order, described unimpeded inlet pipe 311 is closed, the by product of reactant gases and the reaction generation not carrying out in gas reaction chamber 305 reacting is avoided to be revealed by unimpeded inlet pipe 311, avoid polluting the deposition apparatus place workshop condition of silicon nitride film, improve the safety performance of silicon nitride film deposition apparatus.
Except above-mentioned mode of connection, the position of described switch block 313 also can with the location swap of gas flow monitor 315 (or gas flow monitor).
In addition to the implementation, described deposition apparatus can also only include one in switch block 313 or gas flow monitor 315 (or gas flow monitor), and namely switch block 313 and gas flow monitor 315 (or gas flow monitor) non-concurrent exist.Described switch block 313 or gas flow monitor 315 or gas flow monitor can be arranged at unimpeded inlet pipe 311 inlet mouth place, and also can be connected with described unimpeded inlet pipe 311 one end, the other end is connected with described gas reaction chamber 305.
Above in each embodiment, described switch block 313 can be in existing technique and can control any one valve that pipeline opens and close or connector, and it does not limit the scope of the invention.
In above embodiment, by the sidewall at exhaust emission tube, unimpeded inlet pipe through is with it set, and when the deposition apparatus of silicon nitride film is in shutdown or holding state, sacrifice gas is passed into exhaust emission tube by unimpeded inlet pipe, the by product that reaction residual in exhaust emission tube is produced is discharged, when preventing the deposition apparatus temperature of silicon nitride film from reducing, residue in the by product that in exhaust emission tube, reaction produces to condense in exhaust emission tube, exhaust emission tube is avoided to block, improve the normal working hours of the deposition apparatus of silicon nitride film, reduce use cost.
It should be noted that, the deposition apparatus that technical solution of the present invention provides, except being applicable to the deposition apparatus of silicon nitride film in above-described embodiment, being also applicable to the deposition apparatus of other types, not repeating at this.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection domain of technical solution of the present invention.
Claims (10)
1. a deposition apparatus; comprise gas reaction chamber and exhaust emission tube; described exhaust emission tube is connected with described gas reaction chamber; it is characterized in that, also comprise: unimpeded inlet pipe, described unimpeded inlet pipe is positioned at the sidewall of described exhaust emission tube; and it is through with described exhaust emission tube; be suitable for described deposition apparatus when being in shutdown or holding state, pass into sacrifice gas by unimpeded inlet pipe to exhaust emission tube, the by product that reaction residual in exhaust emission tube is produced is discharged.
2. deposition apparatus as claimed in claim 1, it is characterized in that, described unimpeded inlet pipe is near described exhaust emission tube and gas reaction chamber coupling end.
3. deposition apparatus as claimed in claim 1, is characterized in that, described unimpeded inlet pipe and described exhaust emission tube one-body molded.
4. deposition apparatus as claimed in claim 1, is characterized in that, the mode of connection of described unimpeded inlet pipe and the sidewall of described exhaust emission tube is for be socketed or to weld or be threaded.
5. deposition apparatus as claimed in claim 1, it is characterized in that, also comprise: gas flow monitor or gas flow monitor, one end of described gas flow monitor or gas flow monitor is connected with the opening of described unimpeded inlet pipe.
6. deposition apparatus as claimed in claim 1, it is characterized in that, also comprise: gas flow monitor or gas flow monitor, one end of described gas flow monitor or gas flow monitor is connected with exhaust emission tube, and the other end is connected with unimpeded inlet pipe.
7. deposition apparatus as claimed in claim 1, it is characterized in that, also comprise: switch block, one end of described switch block is connected with exhaust emission tube, and the other end is connected with unimpeded inlet pipe.
8. deposition apparatus as claimed in claim 1, it is characterized in that, also comprise: switch block, one end of described switch block is connected with the opening of unimpeded inlet pipe.
9. deposition apparatus as claimed in claim 7 or 8, it is characterized in that, described switch block is valve or connector.
10. deposition apparatus as claimed in claim 1, it is characterized in that, also comprise: the first inlet pipe and the second inlet pipe, described first inlet pipe and the second inlet pipe are connected with described gas reaction chamber is through respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210214960.9A CN102719806B (en) | 2012-06-26 | 2012-06-26 | Deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210214960.9A CN102719806B (en) | 2012-06-26 | 2012-06-26 | Deposition apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102719806A CN102719806A (en) | 2012-10-10 |
| CN102719806B true CN102719806B (en) | 2016-03-30 |
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ID=46945667
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210214960.9A Active CN102719806B (en) | 2012-06-26 | 2012-06-26 | Deposition apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104916517B (en) * | 2014-03-11 | 2017-06-09 | 上海华虹宏力半导体制造有限公司 | The isolating device and its control method of reaction chamber and quartz ampoule |
| CN109797426A (en) * | 2019-03-11 | 2019-05-24 | 上海新昇半导体科技有限公司 | A kind of crystal pulling apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201840964U (en) * | 2010-10-19 | 2011-05-25 | 英作纳米科技（北京）有限公司 | Tail gas absorbing device for atomic layer deposition reaction |
| CN102115877A (en) * | 2009-12-31 | 2011-07-06 | 中国科学院金属研究所 | Equipment for preparing boron-doped isotropic pyrolytic carbon materials |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0671529B2 (en) * | 1991-03-19 | 1994-09-14 | 荏原インフィルコ株式会社 | Method and apparatus for treating CVD exhaust gas |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102115877A (en) * | 2009-12-31 | 2011-07-06 | 中国科学院金属研究所 | Equipment for preparing boron-doped isotropic pyrolytic carbon materials |
| CN201840964U (en) * | 2010-10-19 | 2011-05-25 | 英作纳米科技（北京）有限公司 | Tail gas absorbing device for atomic layer deposition reaction |
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| CN102719806A (en) | 2012-10-10 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140409 |
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Effective date of registration: 20140409 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: Zuchongzhi road in Pudong Zhangjiang hi tech park Shanghai city Pudong New Area No. 1399 201203 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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