CN211907436U - FLR embeds power device of JTE's composite termination structure - Google Patents
FLR embeds power device of JTE's composite termination structure Download PDFInfo
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- CN211907436U CN211907436U CN201820922085.2U CN201820922085U CN211907436U CN 211907436 U CN211907436 U CN 211907436U CN 201820922085 U CN201820922085 U CN 201820922085U CN 211907436 U CN211907436 U CN 211907436U
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- 239000002131 composite material Substances 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 27
- 238000000034 method Methods 0.000 abstract description 8
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 230000003014 reinforcing effect Effects 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 description 16
- 238000009826 distribution Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 7
- 238000000407 epitaxy Methods 0.000 description 6
- 238000001459 lithography Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000012938 design process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
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Abstract
The utility model discloses a power device with FLR embedded JTE composite terminal structure, which is sequentially stacked with a P-type area, an epitaxial layer, a substrate layer and a cathode from top to bottom, wherein the anode is arranged in the P-type area; a P + region and a JTE are arranged above the epitaxial layer, and the P + region is connected with one end of the JTE; a plurality of FLRs are arranged along the JTE; the FLR has a junction depth greater than the thickness of the JTE. The utility model discloses a combine traditional knot terminal JTE structure and field limiting ring FLR structure and surge current tolerance reinforcing structure in the withstand voltage knot terminal of power device, simple process, through the further space electric field modulation to the JTE structure, it is that the terminal structure reduces JTE concentration sensitivity, can improve the reverse withstand voltage ability at device terminal and reduce the chip area at required withstand voltage terminal simultaneously by a wide margin to and the surge current tolerance of reinforcing device.
Description
Technical Field
The utility model relates to a semiconductor device technical field, concretely relates to power device of JTE (traditional junction terminal extension) and FLR (field limiting ring) composite termination structure.
Background
SiC, which is a wide bandgap semiconductor material rapidly developed in recent ten years, has advantages of a wide bandgap, high thermal conductivity, high carrier saturation mobility, high power density, and the like, compared with other semiconductor materials, such as Si, GaN, and GaAs. SiC can generate silicon dioxide through thermal oxidation, so that the realization of power devices and circuits such as SiC MOSFET, SBD, IGBT, GTO and the like becomes possible. Since the 90 s in the 20 th century, power devices such as SiC MOSFETs and SBDs have been widely used in switching regulator power supplies, high-frequency heating, automotive electronics, and power amplifiers.
In the design and preparation processes of the existing silicon carbide power device, especially a high-voltage power device, in order to reduce a junction fringe electric field and improve the actual voltage endurance capability of the device, the device needs to have a good terminal structure, such as a Field Plate (FP), a Field Limiting Ring (FLR), a Junction Terminal Extension (JTE), and the like. As shown in fig. 1 and 2, mainly Field Limiting Rings (FLRs) and Junction Termination Extension Structures (JTEs) are widely used in existing SiC power device structures.
However, since the surface electric field of the SiC device is high, in order to increase the withstand voltage, the surface peak electric field needs to be reduced at the time of device design, and a large number of field limiting rings need to be designed. In the design, the surface electric field distribution is influenced by more factors such as the number of rings, the width of the rings, the interval of the rings and the like, and the chip area occupied by the terminals of the field limiting rings is large, so that the current is not favorably improved. And the junction termination extension structure JTE has a figure of merit concentration, and the device termination breakdown withstand voltage is sensitive to the figure of merit concentration of JTE, so that the design window is small. And the junction terminal extension structure is very sensitive to surface charges, and the surface electric field distribution of the device is easily influenced due to interface instability and oxide layer charges, so that the breakdown voltage and the reliability of the device are influenced. Therefore, it is necessary to design a more reliable and efficient SiC device termination structure, which is insensitive to JTE concentration and interface charge, and improves the voltage endurance of the device.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a power device with a composite terminal structure, which has a novel and unique structure, is insensitive to JTE concentration and interface charge, and simultaneously improves the pressure resistance of the device; the specific technical scheme is as follows:
a power device with an FLR embedded JTE composite terminal structure is sequentially provided with a P-type region, an epitaxial layer, a substrate layer and a cathode in a stacking mode from top to bottom, wherein an anode is arranged in the P-type region; a P + region and a JTE are arranged above the epitaxial layer, and the P + region is connected with one end of the JTE; a plurality of FLRs are arranged along the JTE; the FLR has a junction depth greater than the thickness of the JTE.
Further, the bottom of the JTE structure or the FLR structure is provided with an avalanche tolerance enhancement structure.
Further, the avalanche tolerance enhancement structure is an N-type layer avalanche tolerance enhancement structure.
Further, the power device comprises a PIN, an SBD, a MOSFET, an IGBT or a GTO.
Further, the wafer material for manufacturing the power device comprises silicon, silicon carbide, gallium arsenide, aluminum nitride, gallium oxide or diamond.
The utility model discloses withstand voltage structure of composite termination combines traditional knot terminal JTE structure and field limiting ring FLR structure and surge current tolerance reinforcing structure, simple process. The field limiting ring FLR plays main space modulation left and right to the reverse withstand voltage electric field in this structure, make reverse electric field to keeping away from the horizontal gradual diffusion separation of direction in active area, the JTE structure of upper strata is further to making slight modulation to the space electric field between the adjacent field limiting ring simultaneously, further sparse electric field, finally make whole terminal structure electric field distribution more even, the process tolerance to the FLR structure increases, JTE concentration sensitivity reduces, can improve the reverse withstand voltage ability at device terminal and reduce the chip area at required withstand voltage terminal by a wide margin simultaneously. By the structure of the surge current tolerance enhancement structure, under the condition of large forward surge current, the large-area PN junction of the P + and N Plus structures of the terminal can enhance the shunt of the surge current and enhance the surge current tolerance of the device.
Drawings
FIG. 1 is a schematic diagram of a conventional junction termination extension JTE structure in the prior art;
FIG. 2 is a diagram of a prior art structure of a field limiting ring FLR;
FIG. 3 is a schematic diagram of the JTE and FLR composite termination structure of example 1;
FIG. 4 is a schematic structural diagram of JTE and FLR and avalanche tolerance enhancement structure of example 2;
FIG. 5 is a schematic structural diagram of JTE and FLR and avalanche tolerance enhancement structure of example 3;
FIG. 6 is a schematic diagram of electric field distribution and breakdown voltage of a conventional JTE termination structure;
FIG. 7 is a schematic diagram of the electric field distribution and breakdown voltage of a conventional FLR termination structure;
FIG. 8 is a schematic of the electric field distribution and breakdown voltage of the JTE and buried FLR composite termination structure of example 1;
FIG. 9 is a schematic of the electric field distribution and breakdown voltage of the JTE and buried FLR composite termination structure of example 2;
FIG. 10 is a schematic of the electric field distribution and breakdown voltage of the JTE and buried FLR composite termination structures of example 3.
In the figure: 1. an anode; 2. High-K medium; 3. a P + region; 4. (ii) a FLR structure; 5. a JTE structure; 6. an N + substrate; 7. an epitaxial layer; 8. and an N + region.
Detailed Description
The present invention will be more fully described with reference to the following examples. The present invention may be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein.
Example 1
As shown in fig. 3, the present embodiment provides a power device, in which a P-type region, an epitaxial layer, a substrate layer, and a cathode are sequentially stacked from top to bottom, and an anode is disposed in the P-type region. The power device is provided with a special FLR embedded JTE composite terminal structure. This novel terminal structure mainly comprises two kinds of structure combinations: the structure is JTE structure and FLR structure. The upper layer of the junction terminal region of the N-type (or P-type) epitaxial voltage-withstanding layer is a P-type junction terminal extension JTE structure (the extension is of the N type when the extension is of the P type) with the doping concentration of Dose-JTE opposite to that of the epitaxial layer, and a P-type field limiting ring FLR with the doping concentration of Dose-FLR opposite to that of the epitaxial layer is simultaneously embedded and injected into the JTE, wherein the injection junction depth of the field limiting ring is deeper than that of the JTE.
When the novel composite terminal structure is manufactured in a specific process, a JTE structure with the concentration of Dose-JTE can be injected firstly, then field limiting ring FLR photoetching is carried out in a JTE region, the field limiting ring FLR with the concentration of Dose-FLR is directly injected at the photoetching opening, and the field limiting ring FLR nested with the JTE is manufactured. It is also possible to inject FLR first and then JTE.
Example 2
As shown in fig. 4, in the present embodiment, an N-type Surge current tolerance enhancement structure (P-type when the epitaxy is P-type) with the same doping type concentration as the epitaxy layer may be implanted in the lower layer of the JTE structure and the same lithography window of the JTE.
Example 3
As shown in fig. 5, the N-type layer Surge tolerance enhancement structure (P-type when the epitaxy is P-type) with the same doping type concentration as the epitaxial layer is implanted in the same lithography window as the FLR structure and is implanted in the lower layer of the FLR structure.
FIG. 6 shows reverse electric field distribution and reverse breakdown voltage characteristics of a conventional JTE structure termination, with a reverse breakdown voltage of about 1500V.
FIG. 7 shows the reverse electric field distribution and reverse breakdown voltage characteristics of the conventional FLR structure termination, with a reverse breakdown voltage of about 1500V.
FIG. 8 shows the reverse electric field distribution and reverse breakdown voltage characteristics of the composite termination of example 1, which shows that the reverse electric field distribution of the composite termination of the present invention is more extended around the FLR, and at the same time, the finer distribution of the upper JTE region is extended, and the breakdown voltage of the entire termination structure is raised to about 2130V. Fig. 9 and 10 are reverse electric field distribution and reverse withstand voltage breakdown voltage characteristics of examples 2 and 3, respectively; it can be seen that the breakdown voltage also rises to around 2130V. By contrast, the breakdown voltages of examples 1 to 3 were significantly increased under the same device size and doping concentration.
In the above embodiment, when the specific process is performed, a JTE structure with Dose-JTE concentration may be first implanted, then a field limiting ring FLR lithography may be performed on the JTE region again, and the field limiting ring FLR with Dose-FLR concentration may be directly implanted at the opening of the lithography, so as to fabricate the field limiting ring FLR nested with the JTE. It is also possible to inject FLR first and then JTE. Meanwhile, an N-type layer avalanche tolerance enhancement structure (P type when the epitaxy is P type) with the same doping type concentration as the epitaxial layer and Surge-resistant Dose (Dose-Surge) can be injected into the lower layer of the JTE structure and the same photoetching window of the JTE; or an N-type layer Surge current tolerance enhancement structure (P type when the epitaxy is P type) which is injected into the lower layer of the FLR structure and has the same photoetching window as the FLR structure and the same doping type concentration as the epitaxy layer and is of Dose-surgery. The novel composite terminal voltage-resistant structure combines a traditional junction terminal JTE structure, a field limiting ring FLR structure and a surge current tolerance enhancement structure, and the process is simple. The field limiting ring FLR plays main space modulation left and right to the reverse withstand voltage electric field in this structure, make reverse electric field to keeping away from the horizontal gradual diffusion separation of direction in active area, the JTE structure of upper strata is further to making slight modulation to the space electric field between the adjacent field limiting ring simultaneously, further sparse electric field, finally make whole terminal structure electric field distribution more even, the process tolerance to the FLR structure increases, JTE concentration sensitivity reduces, can improve the reverse withstand voltage ability at device terminal and reduce the chip area at required withstand voltage terminal by a wide margin simultaneously. By the structure of the surge current tolerance enhancement structure, under the condition of large forward surge current, the large-area PN junction of the P + and N Plus structures of the terminal can enhance the shunt of the surge current and enhance the surge current tolerance of the device.
According to the power device voltage-withstanding terminal structure, a traditional junction terminal JTE structure, a field limiting ring FLR structure and a surge current tolerance enhancement structure are combined in a voltage-withstanding junction terminal of a power device, the process is simple, the terminal structure is reduced in JTE concentration sensitivity through further space electric field modulation of the JTE structure, the reverse voltage-withstanding capability of the device terminal can be greatly improved, the chip area of the required voltage-withstanding terminal can be reduced, and the surge current tolerance of the device can be enhanced.
The above examples are only for illustrating the present invention, and besides, there are many different embodiments, which can be conceived by those skilled in the art after understanding the idea of the present invention, and therefore, they are not listed here.
Claims (5)
1. A power device with an FLR embedded JTE composite terminal structure is sequentially provided with a P-type region, an epitaxial layer, a substrate layer and a cathode in a stacking mode from top to bottom, wherein an anode is arranged in the P-type region; a P + region and a JTE are arranged above the epitaxial layer, and the P + region is connected with one end of the JTE; it is characterized in that a plurality of FLRs are arranged along the JTE; the FLR has a junction depth greater than the thickness of the JTE.
2. The power device of claim 1, wherein a bottom of the structure of the JTE or the structure of the FLR is provided with an avalanche tolerance enhancement structure.
3. The power device according to claim 2, wherein the avalanche resistance enhancement structure is an N-type layer avalanche resistance enhancement structure.
4. The power device of claim 1, wherein the power device comprises a PIN, SBD, MOSFET, IGBT, or GTO.
5. The power device of claim 1 wherein a fabrication wafer material of the power device comprises silicon, silicon carbide, gallium arsenide, aluminum nitride, gallium oxide, or diamond.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820922085.2U CN211907436U (en) | 2018-06-14 | 2018-06-14 | FLR embeds power device of JTE's composite termination structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820922085.2U CN211907436U (en) | 2018-06-14 | 2018-06-14 | FLR embeds power device of JTE's composite termination structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211907436U true CN211907436U (en) | 2020-11-10 |
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| CN201820922085.2U Active CN211907436U (en) | 2018-06-14 | 2018-06-14 | FLR embeds power device of JTE's composite termination structure |
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| Country | Link |
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| CN (1) | CN211907436U (en) |
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- 2018-06-14 CN CN201820922085.2U patent/CN211907436U/en active Active
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Effective date of registration: 20231103 Address after: Room 203-1, North 2nd Floor, Building 2, Software Park, North Side of Cluster Road, Xuzhou City, Jiangsu Province, 221000 Patentee after: Jiangsu Zifeng Intellectual Property Service Co.,Ltd. Address before: 100176 courtyard 17, Tonghui Ganqu Road, Daxing Economic and Technological Development Zone, Beijing Patentee before: BEIJING CENTURY GOLDRAY SEMICONDUCTOR Co.,Ltd. |
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Effective date of registration: 20240119 Address after: 231200, 9th Floor, Building A12, Phase II of Gongtou Liheng Plaza, Intersection of Innovation Avenue and Fanhua Avenue, Economic Development Zone Expansion Zone, Feixi County, Hefei City, Anhui Province Patentee after: Xinhe Semiconductor (Hefei) Co.,Ltd. Address before: Room 203-1, North 2nd Floor, Building 2, Software Park, North Side of Cluster Road, Xuzhou City, Jiangsu Province, 221000 Patentee before: Jiangsu Zifeng Intellectual Property Service Co.,Ltd. |