CN211824833U - Micro-pressure sensor with high sensitivity - Google Patents
Micro-pressure sensor with high sensitivity Download PDFInfo
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- CN211824833U CN211824833U CN202020944290.6U CN202020944290U CN211824833U CN 211824833 U CN211824833 U CN 211824833U CN 202020944290 U CN202020944290 U CN 202020944290U CN 211824833 U CN211824833 U CN 211824833U
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Abstract
The utility model discloses a micro-pressure sensor with high sensitivity, including boron glass and response diaphragm, boron glass's positive center is provided with the boss structure, and the top of boss structure settles and have siliceous basement, the middle part of siliceous basement is provided with the cross beam. This micro-pressure sensor with high sensitivity passes through the cavity that siliceous basement back middle part was equipped with, corrode at the cavity bottom and form the flat membrane, siliceous basement back and boron glass looks bonding, and leave certain bonding allowance, the boss structure that boron glass openly center set up mutually supports with siliceous basement cavity, and leave certain work allowance, can not damage because of transshipping when guaranteeing the normal work of beam membrane structure, and make the spacing of sensor more reasonable, guarantee that beam membrane sensitive element can not damage because of high overload, when guaranteeing the high sensitivity of sensor, have high overload protection ability concurrently, in addition, this structural design is simple, easy manufacture, the cost is lower.
Description
Technical Field
The utility model relates to a sensor technical field specifically is a micro-pressure sensor with high sensitivity.
Background
A pressure sensor is a device or apparatus that senses a pressure signal and converts the pressure signal into a usable output electrical signal according to a certain rule. Among the products implemented using silicon micromachining technology, pressure sensors are the earliest category of development. The piezoresistive pressure sensor is small in size, low in cost and simple in manufacturing process, and is widely applied.
At present, the requirement on sensitivity of a micro-pressure sensor is higher and higher in a small magnitude, and although the existing research results are very successful, the problems of interference resistance, sensitivity reduction, cost increase and processing difficulty of the sensor are caused by some additional operations, so that a micro-pressure sensor with high sensitivity is provided.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a minute pressure sensor with high sensitivity to solve present minute pressure sensor who proposes in the above-mentioned background art at little magnitude, to the requirement of sensitivity higher and higher, and current research achievement though very effective, nevertheless because some additional operations lead to the interference immunity of sensor, sensitivity to reduce, the problem of cost improvement and processing difficulty moreover.
In order to achieve the above object, the utility model provides a following technical scheme: the micro-pressure sensor with high sensitivity comprises boron glass and an induction membrane, wherein a boss structure is arranged in the center of the front face of the boron glass, a siliceous substrate is arranged at the top end of the boss structure, a cross beam is arranged in the middle of the siliceous substrate, a square beam is connected to the right side of the inner wall of the cross beam, the induction membrane is mounted on the right side of the bottom of the front end of the siliceous substrate, a piezoresistor is arranged at the tail end of the cross beam, a metal lead is connected to the end of the piezoresistor, and a bonding pad is arranged at the end of the metal lead.
Preferably, the tail end of the cross beam is connected with four corners of the cross beam, and the cross beam, the square beam and the beams around the silicon substrate form a beam film structure together.
Preferably, piezoresistors are arranged at the position of the maximum stress along the [ 100 ] crystal direction at the tail end of the cross beam, the number of the piezoresistors is four, and the four piezoresistors are connected with each other through metal leads to form a Wheatstone bridge.
Preferably, a cavity is arranged in the middle of the back surface of the siliceous base, a flat film is formed at the bottom of the cavity by etching, and the back surface of the siliceous base is bonded with the boron glass.
Preferably, the size of the outer wall of the top end of the boron glass is matched with the size of the outer wall of the bottom end of the siliceous substrate, and the boron glass and the siliceous substrate are tightly attached from top to bottom.
Preferably, the boss structure is tightly attached to the middle part of the inner wall of the siliceous substrate, and the boss structure, the siliceous substrate and the boron glass are fixedly connected.
Preferably, the end part of the piezoresistor and the end part of the pad are tightly attached, and the piezoresistor pad and the metal lead are communicated with each other.
Compared with the prior art, the beneficial effects of the utility model are that:
1. the front of the siliceous basement of this micro-pressure sensor with high sensitivity corrodes and forms mutually perpendicular cross roof beam and square roof beam, the end of cross roof beam links to each other with four angles of square roof beam, cross roof beam, square roof beam and siliceous basement roof beam all around form the beam membrane structure jointly, compare in ordinary beam membrane structure, the stress of cross roof beam end is more concentrated, sensitivity is higher, the difficult problem that little pressure is difficult to measure has been solved, four piezo-resistors have been arranged along [ 100 crystallographic directions ] in maximum stress department to the end of cross roof beam, four piezo-resistors form the wheatstone bridge through metal lead and pad interconnect.
2. This siliceous basement back middle part of micro-pressure sensor with high sensitivity is equipped with the cavity, corrode at the cavity bottom and form the flat membrane, the siliceous basement back bonds with boron glass mutually, and leave certain bonding allowance, the boss structure that boron glass openly center set up mutually supports with siliceous basement cavity, and leave certain work allowance, can not damage because of transshipping when guaranteeing the normal work of beam membrane structure, and make the spacing of sensor more reasonable, guarantee that beam membrane sensitive element can not damage because of high overload, when guaranteeing the high sensitivity of sensor, have high overload protection ability concurrently, in addition, this structural design is simple, easy manufacture, the cost is lower.
Drawings
FIG. 1 is a schematic view of the overall front three-dimensional structure of the present invention;
FIG. 2 is a schematic view of the bonding structure of the present invention;
FIG. 3 is a schematic view of the three-dimensional structure of the glass boss of the present invention;
fig. 4 is a schematic diagram of the structure of the arrangement of the piezoresistors of the present invention.
In the figure: 1. boron glass; 2. a siliceous substrate; 3. a square beam; 4. a cross beam; 5. an induction diaphragm; 6. a boss structure; 7. a voltage dependent resistor; 8. a pad; 9. and a metal lead.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-4, the present invention provides a technical solution: a micro-pressure sensor with high sensitivity comprises boron glass 1, a siliceous substrate 2, a square beam 3, a cross beam 4, a sensing diaphragm 5, a boss structure 6, a piezoresistor 7, a pad 8 and a metal lead 9, wherein the boss structure 6 is arranged at the center of the front surface of the boron glass 1, the siliceous substrate 2 is arranged at the top end of the boss structure 6, the cross beam 4 is arranged in the middle of the siliceous substrate 2, the square beam 3 is connected to the right side of the inner wall of the cross beam 4, the sensing diaphragm 5 is arranged on the right side of the bottom of the front end of the siliceous substrate 2, the piezoresistor 7 is arranged at the tail end of the cross beam 4, the metal lead 9 is connected to the end of the piezoresistor 7, the pad 8 is arranged at the end of the metal lead 9, the tail end of the cross beam 4 is connected with the four corners of the cross beam 4, and the cross beam 4, the square beam 3 and the, the tail end of the cross beam 4 is provided with four piezoresistors 7 at the position of the maximum stress along the (100) crystal direction, the piezoresistors 7 are arranged in four, the four piezoresistors 7 are connected with each other through metal leads 9 to form a Wheatstone bridge, the end part of each piezoresistor 7 is tightly attached to the end part of each bonding pad 8, the bonding pads 8 of the piezoresistors 7 are communicated with the metal leads 9, the front side of the silicon substrate 2 is corroded to form the cross beam 4 and the square beam 3 which are perpendicular to each other, the tail end of the cross beam 4 is connected with four corners of the square beam 3, the cross beam 4, the square beam 3 and beams around the silicon substrate form a beam film structure together, compared with a common beam film structure, the stress at the tail end of the cross beam 4 is more concentrated, the sensitivity is higher, the problem that the micro pressure is difficult to measure is solved, the tail end of the cross beam is provided with the four piezoresistors 7 at the position of the maximum stress, the four piezoresistors 7 are mutually connected through metal leads 9 and bonding pads 8 to form a Wheatstone bridge;
the middle part of the back of the siliceous base 2 is provided with a cavity, the bottom of the cavity is corroded to form a flat film, the back of the siliceous base 2 is bonded with the boron glass 1, the size of the outer wall at the top end of the boron glass 1 is matched with the size of the outer wall at the bottom end of the siliceous base 2, the boron glass 1 and the siliceous base 2 are tightly attached from top to bottom, the boss structure 6 is tightly attached to the middle part of the inner wall of the siliceous base 2, the boss structure 6, the siliceous base 2 and the boron glass 1 are fixedly connected, the middle part of the back of the siliceous base 2 is provided with the cavity, the bottom of the cavity is corroded to form the flat film, the back of the siliceous base 2 is bonded with the boron glass 1, a certain bonding allowance is left, the boss structure 6 arranged at the center of the front of the boron glass 1 is matched with the cavity of the siliceous base 2, a certain working allowance is, and make the spacing of sensor more reasonable, guarantee that roof beam membrane sensing element can not damage because of high overload, when guaranteeing the high sensitivity of sensor, have high overload protection ability concurrently, in addition, this structural design is simple, and it is easy to make, and the cost is lower.
The working principle is as follows: for the micro-pressure sensor with high sensitivity, firstly, a cross beam 4 and a square beam 3 which are vertical to each other are formed on the front side of a siliceous substrate 2 in a corrosion mode, the tail end of the cross beam 4 is connected with four corners of the square beam 3, the cross beam 4, the square beam 3 and the beams around the siliceous substrate 2 jointly form a beam film structure, a piezoresistor 7 is arranged at the position with the maximum stress along the [ 100 ] crystal direction at the tail end of the cross beam 4, the four piezoresistors 7 are mutually connected through a metal lead 9 to form a Wheatstone bridge, the siliceous substrate 2 is provided with a cavity in the middle of the back side, a flat film is formed on the bottom of the cavity in a corrosion mode, the back side of the siliceous substrate 2 is bonded with boron glass 1, a certain bonding allowance is reserved, a boss structure 6 is arranged at the center of the front side of the boron glass 1, the boss structure 6 is mutually matched with the cavity of the siliceous substrate 2, a certain working allowance is reserved, and the, in addition, the beam film structure provided by the device has an obvious stress concentration effect, and the sensitivity of the sensor is greatly improved.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. A micro-pressure sensor with high sensitivity, comprising boron glass (1) and a sensing diaphragm (5), characterized in that: the sensor is characterized in that a boss structure (6) is arranged at the center of the front face of the boron glass (1), a siliceous substrate (2) is arranged at the top end of the boss structure (6), a cross beam (4) is arranged in the middle of the siliceous substrate (2), a square beam (3) is connected to the right side of the inner wall of the cross beam (4), an induction diaphragm (5) is installed on the right side of the bottom of the front end of the siliceous substrate (2), a piezoresistor (7) is arranged at the tail end of the cross beam (4), a metal lead (9) is connected to the end of the piezoresistor (7), and a bonding pad (8) is arranged at the end of the metal lead (9).
2. A micro-pressure sensor with high sensitivity according to claim 1, wherein: the tail end of the cross beam (4) is connected with four corners of the square beam (3), and the cross beam (4), the square beam (3) and the beams around the siliceous substrate (2) form a beam film structure together.
3. A micro-pressure sensor with high sensitivity according to claim 1, wherein: piezoresistors (7) are arranged at the position of the maximum stress along the (100) crystal direction at the tail end of the cross beam (4), four piezoresistors (7) are arranged, and the four piezoresistors (7) are connected with one another through metal leads (9) to form a Wheatstone bridge.
4. A micro-pressure sensor with high sensitivity according to claim 1, wherein: a cavity is arranged in the middle of the back of the siliceous substrate (2), a flat film is formed at the bottom of the cavity by corrosion, and the back of the siliceous substrate (2) is bonded with the boron glass (1).
5. A micro-pressure sensor with high sensitivity according to claim 1, wherein: the size of the outer wall of the top end of the boron glass (1) is matched with the size of the outer wall of the bottom end of the siliceous base (2), and the boron glass (1) and the siliceous base (2) are tightly attached from top to bottom.
6. A micro-pressure sensor with high sensitivity according to claim 1, wherein: the boss structure (6) is tightly attached to the middle part of the inner wall of the siliceous substrate (2), and the boss structure (6), the siliceous substrate (2) and the boron glass (1) are fixedly connected.
7. A micro-pressure sensor with high sensitivity according to claim 1, wherein: the end part of the piezoresistor (7) is tightly attached to the end part of the bonding pad (8), and the bonding pad (8) of the piezoresistor (7) is communicated with the metal lead (9).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020944290.6U CN211824833U (en) | 2020-05-28 | 2020-05-28 | Micro-pressure sensor with high sensitivity |
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| CN202020944290.6U CN211824833U (en) | 2020-05-28 | 2020-05-28 | Micro-pressure sensor with high sensitivity |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113091989A (en) * | 2021-04-09 | 2021-07-09 | 中国科学院空天信息创新研究院 | Resonant micro-pressure sensor and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113091989A (en) * | 2021-04-09 | 2021-07-09 | 中国科学院空天信息创新研究院 | Resonant micro-pressure sensor and preparation method thereof |
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