CN221147909U - Temperature, acceleration and pressure sensor chip based on SOI isolation technology - Google Patents
Temperature, acceleration and pressure sensor chip based on SOI isolation technology Download PDFInfo
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- CN221147909U CN221147909U CN202322851963.XU CN202322851963U CN221147909U CN 221147909 U CN221147909 U CN 221147909U CN 202322851963 U CN202322851963 U CN 202322851963U CN 221147909 U CN221147909 U CN 221147909U
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- 230000001133 acceleration Effects 0.000 title claims abstract description 38
- 238000002955 isolation Methods 0.000 title claims abstract description 29
- 238000005516 engineering process Methods 0.000 title claims abstract description 23
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 238000010030 laminating Methods 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 51
- 229910052710 silicon Inorganic materials 0.000 description 31
- 239000010703 silicon Substances 0.000 description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- 235000012239 silicon dioxide Nutrition 0.000 description 13
- 239000000377 silicon dioxide Substances 0.000 description 13
- 229910052796 boron Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 239000005388 borosilicate glass Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000009529 body temperature measurement Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000009643 growth defect Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000008542 thermal sensitivity Effects 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
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Abstract
The utility model relates to a temperature, acceleration and pressure sensor chip based on SOI isolation technology, comprising: the sensitive chip is formed by laminating an upper SOI sheet and a lower SOI sheet, wherein a mass block is arranged in the middle of the lower SOI sheet, and sensitive beams are respectively arranged on two sides of a group of opposite sides of the mass block; two force sensitive resistors are arranged on each sensing beam, and all the force sensitive resistors form a Wheatstone bridge structure circuit; a Wheatstone bridge structure circuit composed of sensitive resistors and a circuit composed of thin film resistors are arranged on the upper SOI wafer. The utility model adopts a Wheatstone bridge connection mode with high sensitivity and strong overload resistance, adopts different types of resistors, and can simultaneously measure the physical quantity of acceleration or pressure.
Description
Technical Field
The utility model relates to the field of micro-electromechanical systems, in particular to a high-temperature-resistant MEMS integrated sensor chip based on SOI technology, which can measure temperature, acceleration and pressure simultaneously.
Background
As MEMS technology has matured, a variety of its products have become widely used in the consumer electronics market. Such as medical machines, aerospace, etc. However, the sensors for measuring a single physical quantity are more, the integrated sensors are less, and the occupied space is larger.
The traditional diffusion silicon pressure sensor adopts PN junction isolation technology, so that the working environment is limited, the measurement accuracy is lower at the limit temperature, the measurement attribute is single, and the multi-parameter physical environment can not be accurately measured at the same time.
Disclosure of utility model
Aiming at the defects of the prior art, the utility model provides a multifunctional composite sensor chip integrating acceleration measurement capability, pressure sensor measurement capability and temperature measurement capability.
The utility model provides an integrated sensor capable of integrating acceleration, temperature and pressure. The SOI isolation technology is adopted to replace the PN junction isolation technology, so that the acceleration sensor and the pressure sensor can stably work in a high-temperature environment. Meanwhile, the temperature sensor is integrated, so that the temperature measurement can be realized, and the measured temperature parameter can further realize the temperature compensation of the acceleration sensor and the pressure sensor. SOI isolation technology is employed and thus can operate in a high temperature environment. Meanwhile, the integrated sensor can measure the ambient temperature and determine the working stability of the device.
The technical scheme adopted by the utility model for achieving the purpose is as follows: temperature, acceleration, pressure sensor chip based on SOI isolation technique includes: the sensitive chip is formed by laminating an upper SOI sheet and a lower SOI sheet, wherein a mass block is arranged in the middle of the lower SOI sheet, and sensitive beams are respectively arranged on two sides of a group of opposite sides of the mass block;
Two force sensitive resistors are arranged on each sensing beam, and all the force sensitive resistors form a Wheatstone bridge structure circuit;
A Wheatstone bridge structure circuit composed of sensitive resistors and a circuit composed of thin film resistors are arranged on the upper SOI wafer.
The sensitive beam is a rectangular frame structure body, and a connecting block connected with the outer frame of the chip is arranged outside the rectangular frame structure body; 2 force sensitive resistors are connected inside each rectangular frame structure body through metal leads, wherein 1 force sensitive resistor is arranged at the maximum stress of the sensitive beam, and the other 1 force sensitive resistor is arranged at the minimum stress of the sensitive beam; the pair of sensitive beams is provided with 4 force sensitive resistors to form a Wheatstone bridge structure circuit.
The on-chip SOI sheet is provided with a Wheatstone bridge structure circuit formed by sensitive resistors, and the specific structure is as follows:
And two sensitive resistor units are arranged on the upper SOI sheet, each sensitive resistor unit comprises two sensitive resistors connected in series, and 4 sensitive resistors form a Wheatstone bridge structure circuit.
The two sensitive resistor units are arranged in parallel.
And growing a sensitive film on the upper SOI sheet, and setting sensitive resistors at the positions of maximum stress and minimum stress of the sensitive film in sequence.
The circuit formed by the thin film resistor is a circuit formed by a single thin film resistor.
The circuit formed by the thin film resistor is a Wheatstone bridge structure circuit formed by the thin film resistor.
The wheatstone bridge configuration circuit includes:
The first positive output end is arranged between the serially connected resistor R1 and resistor R2, the first negative output end is arranged between the serially connected resistor R3 and resistor R4, the resistor R1 and the resistor R4 share the input end V in+, and the output ends of the resistor R2 and the resistor R3 are grounded.
The resistor is one of a force sensitive resistor, a sensitive resistor and a film resistor.
The force sensing resistor forms a Wheatstone bridge structure circuit, the Wheatstone bridge structure circuit formed by the sensing resistor and the circuit formed by the film resistor are respectively output through respective metal leads.
The utility model has the following beneficial effects and advantages:
1. The utility model adopts a Wheatstone bridge connection mode with high sensitivity and strong overload resistance, adopts different types of resistors, and can simultaneously measure physical quantities of acceleration or pressure and temperature. Therefore, the sensor is applicable to complex working environments, improves the measurement accuracy of the sensor at the limit temperature, has high integration level and small volume, and can accurately measure multi-parameter physical environments at the same time.
2. And a thin film resistor such as gold, platinum and the like is manufactured on a solid supporting structure around the mass block, and the resistance value of the resistor is not inherently influenced by inertial motion such as acceleration and the like. And measuring the ambient temperature by measuring the actual resistance of the resistor.
3. The utility model adopts SOI isolation technology, namely, isolation between the isolation sensitive resistor and the substrate is carried out by insulation layer isolation technology. The PN junction isolation technology of the traditional diffusion silicon pressure sensor is abandoned, so that the operable temperature interval of the pressure sensor and the acceleration sensor is improved.
4. The sensor adopts the acceleration measuring sensitive resistor and the pressure measuring sensitive resistor, has simple manufacturing mode and can be generated simultaneously, adopts the piezoresistive working principle, and utilizes the force change caused by the deformation of the diaphragm so as to output signals through a Wheatstone bridge circuit. The basic manufacturing process can be combined, and growth defects in the process are reduced.
5. The sensor of the utility model adopts the constant current source, because the excitation of the constant current source is beneficial to the compensation of the thermal sensitivity drift. Since the temperature coefficient of the bridge arm resistance is positive, the temperature coefficient of the sensitivity of the bridge arm resistance is negative. The temperature coefficient of the output signal voltage when the constant current source is excited is the algebraic sum of the two. Therefore, the output compensation of the sensor is facilitated by adopting a current source power supply mode.
Drawings
FIG. 1 is a top view of a sensitive chip structure of the present utility model; wherein 1 is a mass block, 2 is a spandrel girder, 3 is an outer frame, 4 is a sensitive girder, 5 is a connecting block, 6 is a force sensitive resistor, 7 is a sensitive resistor, and 8 is a thin film resistor;
FIG. 2 is a cross-sectional view of a sensitive chip of the present utility model; 11 high borosilicate glass, 12C type silicon cup, 13 bottom silicon substrate, 14 silicon dioxide isolation layer, 15 top device silicon, 16 Wheatstone bridge resistance, 17 lead holes, 18 metal leads (Al), 19 surface passivation layer silicon dioxide, 20: the silicon dioxide step, the 21 cover plate silicon layer, the 22 temperature measurement metal layer and the 23 cover plate oxide shielding layer;
FIG. 3 is a schematic diagram of a dual Wheatstone bridge circuit configuration of the present utility model; the terminal 31 is an input terminal V in+, the terminal 32 is a first positive output terminal V out1, the terminal 33 is a first negative output terminal V out2, the terminal 34 is a second positive output terminal V out3, the terminal 35 is a second negative output terminal V out4, the terminal 36 is a first ground terminal, and the terminal 37 is a second ground terminal.
Detailed Description
The present utility model will be described in further detail with reference to the accompanying drawings and examples.
In order to make the above objects, features and advantages of the present utility model more comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present utility model. The utility model may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit or scope of the utility model, which is therefore not limited to the specific embodiments disclosed below.
It will be understood that when an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The designations "front", "back", "left", "right" and the like are used herein for illustrative purposes only and do not represent the only embodiment.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this utility model belongs. The terminology used in the description of the utility model herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the utility model.
The pressure sensor chip is a piezoresistance pressure sensor which is mainly based on SOI isolation technology and works in a wide temperature area. The sensitive resistors on the sensor chip are arranged in parallel and connected in a Wheatstone bridge mode. And converting the measured signals into voltage signals for output. The acceleration sensor is a resistance type acceleration sensitive chip of a single-arm cantilever beam structure which is mainly based on an SOI isolation technology and works in a wide temperature area. Two of the four resistors are arranged in the stress maximum area, and two of the four resistors are arranged in the stress zero area.
The integrated sensor is integrally arranged into a sandwich structure. The lowest layer is high borosilicate glass, and is connected with the middle SOI silicon chip (upper SOI chip) by an anodic bonding mode. The acceleration sensitive chip and the pressure sensitive chip are distributed on the middle SOI silicon chip, the two chips are arranged side by side, and the two chips share a grounding end. The upper layer of the integrated sensor is an upper cover with a sandwich structure and is connected with the middle layer in a silicon-silicon bonding mode. Therefore, the sandwich structure of the whole integrated sensor is sequentially from bottom to top: the first bonding high borosilicate glass-silicon base-second silicon bonding metal layer.
The uppermost layer of the integrated sensor is divided into a metal layer and a monocrystalline silicon layer. The metal layer is noble metal capable of measuring temperature, the resistance is not influenced by pressure and acceleration, the resistance changes along with the change of environment, and the temperature is measured according to the change of the resistance. The metal layer is covered on the monocrystalline silicon layer, namely the cover plate silicon layer, and a cavity is formed on the monocrystalline silicon layer and the pressure and acceleration sensitive membrane in the silicon layer below. The cavity can be used as a movable area for the up-and-down vibration of the lower mass block. The monocrystalline silicon layer is formed by grinding off the substrate silicon and the intermediate oxide layer of a silicon wafer with an SOI structure. The thickness of the top silicon layer is 2-3 mu m, and the other crystal directions, the concentration and the like are not required.
The middle silicon substrate consists of surface passivation layer silicon dioxide 9, a silicon dioxide step 10, a cover plate silicon layer 11, a temperature measurement metal layer 12 and a cover plate oxide shielding layer 13, and the inside of the middle silicon substrate is provided with a piezoresistive acceleration sensor cantilever beam, a piezoresistive pressure chip sensitive diaphragm and a lead-out area without a sealing cavity. And dividing the sensitive area on the silicon substrate into an acceleration area and a pressure area according to the performance. The resistance of the silicon-based acceleration sensitive area is positioned at the root of the upper surface of the cantilever beam in the area and is 4 sensitive resistances implanted with light boron ions. The two resistors are arranged horizontally and vertically, the edges of the four resistors are designed with a boron concentration region, and good ohmic contact is formed through the boron concentration region. The upper layer of the resistor is covered by silicon dioxide, and plays a role in insulation protection. The lead holes open from the surface layer silicon dioxide to the boron rich region. The piezoresistive pressure sensor is characterized in that four light boron resistors are implanted in ions on an induction membrane, the four light boron resistors are distributed in the middle of the induction membrane in two rows, and the surface layer also covers the silicon dioxide protection function. The center of the light boron resistor also has an ohmic contact area formed by concentrated boron. The boron-rich region and the acceleration sensitive region are provided with lead holes, metal conductive leads are grown on the lead holes, and the boron-rich region is connected through the leads. The two resistance areas are four resistances and are connected in a Wheatstone bridge mode to convert acceleration and pressure signals into electric signals. The middle of the silicon base layer is the insulating layer silicon dioxide of the SOI silicon wafer, and insulating isolation on the surface resistance is carried out through the silicon dioxide. Below the silicon dioxide layer is a silicon substrate. The position of the silicon substrate, which corresponds to the chip film, presents a trapezoid deep well shape, and is caused by anisotropic corrosion to thin the central layer of the sensitive film.
The lower layer of the integrated sensor is high borosilicate glass and is connected with other layers in an anodic bonding mode. If the absolute pressure sensor needs to be integrated, the high borosilicate glass does not need to be provided with a vent hole. If gauge pressure sensors are integrated, then ventilation through holes are required in the position of the high borosilicate glass right below the center of the pressure diaphragm.
The piezoresistive acceleration sensitive chip is a rectangular sensitive film, two vertical resistors are distributed in a (1, 0) crystal direction, and two transverse resistors are distributed in a (1, -1, 0) crystal direction. The piezoresistive pressure sensor is of a square sensitive membrane structure. The resistors are distributed along the (1, 0) crystal face in the area with the maximum four-sided piezoresistance coefficient. The silicon substrate adopts an SOI structure silicon chip. Both the top layer silicon and the bottom layer silicon are n-type (100) crystal orientation. The thickness of silicon dioxide in the intermediate layer of the SOI structure is 0.5 mu m.
The two Wheatstone bridges are all full-bridge circuits and share a ground terminal. Both wheatstone bridges are in the vacuum cavity.
Fig. 1 is a top view of a sensitive chip structure of the present utility model, and fig. 2 is a cross-sectional view of a sensitive chip of the present utility model.
The sensitive chip is formed by bonding two customized SOI sheets, and the upper SOI sheet is used as a device sensitive layer for sensing a measuring environment. The sensing layer is in a quadrilateral structure seen from a top view, wherein two ends of the sensing layer are connected with sensing beams, and the sensing beams are symmetrically distributed by taking the center of the chip as a center point. The sensing beam is connected with the outer frame of the chip through a regular boss (namely a connecting block).
The lower layer of the sensitive chip, namely the lower SOI sheet, is a supporting layer of the device, a bearing beam and a mass block are prepared on the supporting layer, the mass block is positioned at the center of the device, and the bearing beam is symmetrically distributed by taking the mass block as the center. One end of the spandrel girder is connected with the mass block, and the other end of the spandrel girder is connected with the chip outer frame, and the spandrel girder has the functions of limiting the amplitude of the sensor and protecting the sensor from being structurally complete when the acceleration is overloaded.
In the upper SOI wafer of the sensitive chip, only the upper device layer is used, the position of the upper device layer corresponds to the center position of the mass block of the lower silicon wafer, and the upper device layer and the lower silicon wafer are tightly combined into a whole. The two sensitive beams of the upper device are respectively positioned on the upper surfaces of the two ends of the mass block of the lower device, which are not connected by the spandrel girder. The material level functions of the whole device from top to bottom are a metal layer 12, a metal lead (Al) 8, a lead hole 7, a resistance layer (Wheatstone bridge resistance) 6, a silicon dioxide isolation layer 4, a single crystal layer (bottom silicon substrate) 3, an isolation layer and a device base BF33 high borosilicate glass layer 1 respectively.
The sensor chip adopts a four-side main beam connection design. Acceleration and pressure are measured in the form of a wheatstone bridge full bridge circuit designed on the chip surface. Two resistors are designed at each end of the root of the sensitive beam, the positions of the two resistors are respectively positioned at the maximum stress position and the minimum stress position of the sensitive beam, and two resistors with the same specification are designed at the same position on the sensitive beam at the other end, and a Wheatstone bridge is formed by the four resistors. At point 31 common to R1 and R4 is the input voltage V in +. The common ground of R2 and R3 is grounded. The voltage drop between R1 and R2, and R3 and R4 is the output voltage V out1. With the change of the inertial pose, the elastic deformation of the mass can be converted into an acceleration of the electrical signal measuring device.
The sensor chip is characterized in that a sensitive film grows at the center of the sensor chip, a beam film structure is formed below the sensor chip through bonding, sensitive resistors are designed at the positions with maximum stress and minimum stress of the sensitive film in sequence to form a Wheatstone bridge, and the four resistors are arranged in sequence at R5, R6, R7 and R8. The voltage drop generated between R5 and R6 and between R7 and R8 is the output voltage V out2, with R5 and R8 terminating at the supply voltage V in +, and R6 and R7 commonly terminating at ground. Along with the pressure change, the deformation of the sensitive film causes the resistance to change, and the change of the environmental pressure is measured through the change of the resistance. As shown in fig. 3.
And manufacturing a heavy metal film resistor such as gold, silver or platinum on the solid support structure above the pressure sensitive film. The resistance of the thin film resistor is not influenced by external pressure, the measurement of the ambient temperature can be realized by measuring the resistance of the thin film resistor, and the measured temperature parameter can be further used for realizing the temperature compensation of the sensitive chip. The position of the metal resistor is the same as the crystal direction and far away from the Wheatstone bridge.
The number of the sensitive chips is 1, so that the speed detection on the Y axis can be realized, the pressure detection in the range can be realized, and the environment temperature can be detected.
Claims (10)
1. Temperature, acceleration, pressure sensor chip based on SOI isolation technique includes: the sensitive chip is formed by laminating an upper SOI sheet and a lower SOI sheet, wherein a mass block is arranged in the middle of the lower SOI sheet, and sensitive beams are respectively arranged on two sides of a group of opposite sides of the mass block; the method is characterized in that:
Two force sensitive resistors are arranged on each sensing beam, and all the force sensitive resistors form a Wheatstone bridge structure circuit;
A Wheatstone bridge structure circuit composed of sensitive resistors and a circuit composed of thin film resistors are arranged on the upper SOI wafer.
2. The temperature, acceleration and pressure sensor chip based on the SOI isolation technology according to claim 1, wherein the sensitive beam is a rectangular frame structure body, and a connecting block connected with an outer frame of the chip is arranged outside the rectangular frame structure body; 2 force sensitive resistors are connected inside each rectangular frame structure body through metal leads, wherein 1 force sensitive resistor is arranged at the maximum stress of the sensitive beam, and the other 1 force sensitive resistor is arranged at the minimum stress of the sensitive beam; the pair of sensitive beams is provided with 4 force sensitive resistors to form a Wheatstone bridge structure circuit.
3. The temperature, acceleration and pressure sensor chip based on the SOI isolation technology according to claim 1, wherein the on-chip SOI chip is provided with a Wheatstone bridge structure circuit formed by sensitive resistors, and the specific structure is as follows:
And two sensitive resistor units are arranged on the upper SOI sheet, each sensitive resistor unit comprises two sensitive resistors connected in series, and 4 sensitive resistors form a Wheatstone bridge structure circuit.
4. A temperature, acceleration, pressure sensor chip based on SOI isolation technology according to claim 3, characterized in, that the two sensitive resistive units are arranged in parallel.
5. A temperature, acceleration and pressure sensor chip based on SOI isolation technology according to claim 3, characterized in that the sensitive film is grown on the upper SOI piece, and the sensitive resistors are arranged at the positions of maximum and minimum stress of the sensitive film in sequence.
6. The SOI isolation technology based temperature, acceleration, pressure sensor chip of claim 1, characterized in that the circuit of thin film resistors is a circuit of a single thin film resistor.
7. The SOI isolation technology based temperature, acceleration, pressure sensor chip of claim 1, characterized in that the circuit of thin film resistors is a wheatstone bridge configuration of thin film resistors.
8. The SOI isolation technology based temperature, acceleration, pressure sensor chip of claim 1, wherein the wheatstone bridge configuration circuit comprises:
The first positive output end is arranged between the serially connected resistor R1 and resistor R2, the first negative output end is arranged between the serially connected resistor R3 and resistor R4, the resistor R1 and the resistor R4 share the input end V in+, and the output ends of the resistor R2 and the resistor R3 are grounded.
9. The SOI isolation technology based temperature, acceleration, pressure sensor chip of claim 8, characterized in that the resistance is one of a force sensitive resistance, a sense resistance, a sheet resistance.
10. The SOI isolation technology based temperature, acceleration, pressure sensor chip of claim 8, wherein the force sensitive resistors form a wheatstone bridge configuration circuit, a wheatstone bridge configuration circuit of sensitive resistors, and a circuit of thin film resistors are output through respective metal leads.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322851963.XU CN221147909U (en) | 2023-10-24 | 2023-10-24 | Temperature, acceleration and pressure sensor chip based on SOI isolation technology |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202322851963.XU CN221147909U (en) | 2023-10-24 | 2023-10-24 | Temperature, acceleration and pressure sensor chip based on SOI isolation technology |
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| CN221147909U true CN221147909U (en) | 2024-06-14 |
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| CN202322851963.XU Active CN221147909U (en) | 2023-10-24 | 2023-10-24 | Temperature, acceleration and pressure sensor chip based on SOI isolation technology |
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| Country | Link |
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