CN211814710U - Heat preservation cylinder structure for single crystal furnace and single crystal furnace - Google Patents
Heat preservation cylinder structure for single crystal furnace and single crystal furnace Download PDFInfo
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- CN211814710U CN211814710U CN202020245510.6U CN202020245510U CN211814710U CN 211814710 U CN211814710 U CN 211814710U CN 202020245510 U CN202020245510 U CN 202020245510U CN 211814710 U CN211814710 U CN 211814710U
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Abstract
The utility model discloses a heat preservation section of thick bamboo structure and single crystal growing furnace for single crystal growing furnace, including bottom high temperature board, a lower heat preservation section of thick bamboo, well heat preservation section of thick bamboo, go up a heat preservation section of thick bamboo and go up the heated board, go up a heat preservation section of thick bamboo and include an outer heat preservation section of thick bamboo and go up an interior heat preservation section of thick bamboo, go up outer heat preservation section of thick bamboo and connect hoist mechanism and can do reciprocating motion from top to bottom under hoist mechanism's drive effect. The utility model divides the upper heat-insulating cylinder into an upper outer heat-insulating cylinder and an upper inner heat-insulating cylinder, in the melting stage, the upper outer heat-insulating cylinder is buckled at the top of the middle heat-insulating cylinder, and the thickness of the upper heat-insulating cylinder is more than or equal to that of the middle heat-insulating cylinder, thereby reducing the heat dissipation, further reducing the melting time of silicon materials and reducing the energy consumption; in the equal-diameter growth stage, the upper and outer heat-insulating cylinders are lifted upwards under the action of the lifting mechanism, and the thickness of the upper heat-insulating cylinder is smaller than that of the middle heat-insulating cylinder, so that the temperature of the upper part of the thermal field is reduced, the longitudinal temperature gradient of the thermal field is improved, the equal-diameter growth speed of crystals is improved, and the energy consumption of the production of the silicon single crystal rod is reduced.
Description
Technical Field
The utility model relates to a vertical pulling single crystal growing furnace technical field specifically is a heat preservation section of thick bamboo structure and single crystal growing furnace for single crystal growing furnace.
Background
The Czochralski crystal growing furnace is a directional solidification device of silicon, and has the function of forming single crystal silicon into a crystal bar with a certain crystal growth direction after melt melting, seeding, shouldering, shoulder rotating, constant diameter and ending according to a set process. The czochralski crystal growing furnace is a production device with high energy consumption and long working hours, and under the condition of the same crystal direction and crystal size, the improvement of shortening the working hours and reducing the energy consumption is expected. The heat preservation cylinder is used as an important component in the Czochralski crystal growing furnace, has great influence on the growth of crystals, and has the main functions of heat preservation and heat insulation, and heat loss is reduced so as to reduce energy consumption.
In the existing heat preservation cylinder structure, in order to improve the speed of the isometric growth of the silicon single crystal, the upper heat preservation cylinder is made to be thinner (about 30mm), although the longitudinal temperature gradient of a thermal field can be improved, so that the speed of the isometric growth is improved, in the silicon material melting stage, because the upper heat preservation cylinder has poor heat preservation effect and much heat loss, the melting time is longer, and the energy consumption is higher.
In another existing heat-insulating cylinder structure, in order to reduce the time for melting silicon materials and reduce energy consumption, an upper heat-insulating cylinder is made thicker (as thick as the heat-insulating cylinder, 60-80 mm). Although the melting time of the silicon material can be reduced in the melting stage, the temperature gradient in the longitudinal direction of the thermal field is small, so that the constant diameter growth speed is low, the constant diameter growth time is long, and the energy consumption is still high.
SUMMERY OF THE UTILITY MODEL
The utility model provides a novel a heat preservation section of thick bamboo structure and single crystal growing furnace for single crystal growing furnace to the technical problem that will solve, can reduce the melt time in the melt stage, reduce the energy consumption, can improve the fore-and-aft temperature gradient of thermal field in the isometric growth stage again, reduce isometric growth time, reduce the energy consumption.
In order to solve the technical problem, the utility model discloses a realize through following technical scheme: a heat preservation cylinder structure for a single crystal furnace comprises a bottom high-temperature plate, a lower heat preservation cylinder, a middle heat preservation cylinder, an upper heat preservation cylinder and an upper heat preservation plate which are matched with each other and connected in sequence, wherein the upper heat preservation cylinder comprises an upper outer heat preservation cylinder and an upper inner heat preservation cylinder which are parallel to each other, the upper inner heat preservation cylinder is fixed at the top of the middle heat preservation cylinder, and the upper outer heat preservation cylinder is fixedly connected with a lifting mechanism and can reciprocate up and down relative to the upper inner heat preservation cylinder under the driving action of the lifting mechanism.
Furthermore, the lifting mechanism comprises a fixed bracket, one end of the fixed bracket is connected with the upper outer heat-insulating cylinder, the other end of the fixed bracket is connected with one end of a connecting arm, the other end of the connecting arm is connected with one end of a connecting pipe, the other end of the connecting pipe is connected with one end of a lifting sleeve, and the other end of the lifting sleeve is connected to the pen-shaped cylinder;
the lifting sleeve, the connecting pipe, the connecting arm and the fixed support move up and down in a reciprocating mode under the action of the pen-shaped air cylinder.
Furthermore, the sum of the thicknesses of the upper outer heat-insulating cylinder and the upper inner heat-insulating cylinder is greater than or equal to the thickness of the middle heat-insulating cylinder, and the thickness of the upper inner heat-insulating cylinder is less than the thickness of the middle heat-insulating cylinder.
Further, go up outer heat preservation section of thick bamboo with go up interior heat preservation section of thick bamboo and be parallel to each other, and the clearance between the two is 1 ~ 5mm, and more preferably 3 mm.
Furthermore, the thickness of going up an outer heat preservation section of thick bamboo is 30 ~ 50mm, the thickness of going up an interior heat preservation section of thick bamboo is 30 ~ 45mm, can know from this, goes up the thickness of a heat preservation section of thick bamboo and is 60 ~ 95 mm.
Furthermore, the fixed support is fixedly connected with the upper outer heat-insulating cylinder through a fixed assembly.
Furthermore, the fixing component is a bolt and a nut made of carbon/carbon composite materials.
The utility model also provides a single crystal growing furnace, place in including the single crystal growing furnace cavity heater, support rod axle, crucible of single crystal growing furnace cavity hold in the palm, quartz crucible, draft tube and seed crystal pull rod, still include as above the single crystal growing furnace heat preservation tube structure for, the outer edge of single crystal growing furnace heat preservation tube structure is pressed close to the inner wall of single crystal growing furnace cavity, quartz crucible, support rod axle, crucible hold in the palm for reciprocating motion about the single crystal growing furnace cavity is done.
Further, a silicon melt is placed in the quartz crucible, a seed crystal is attached to the seed crystal pull rod, and the silicon melt and the seed crystal react to generate a silicon crystal;
in the material melting stage, the support rod shaft, the crucible support and the quartz crucible are in a lower-section stroke, and an upper outer heat-insulating cylinder of the heat-insulating cylinder structure for the single crystal furnace is buckled at the top of the middle heat-insulating cylinder;
in the equal-diameter growth stage, the trunnion shaft, the crucible support and the quartz crucible are in an upper-section stroke, and the upper outer heat-insulating cylinder of the heat-insulating cylinder structure for the single crystal furnace is lifted above the upper inner heat-insulating cylinder by the lifting mechanism.
Furthermore, the single crystal furnace also comprises a reflecting plate fixed at the upper end of the bottom heat-insulating plate of the heat-insulating cylinder structure for the single crystal furnace.
Compared with the prior art, the utility model discloses an useful part is:
firstly, the utility model provides a heat preservation cylinder structure for a single crystal furnace, which divides an upper heat preservation cylinder into an upper outer heat preservation cylinder and an upper inner heat preservation cylinder which can move relatively, in the material melting stage, the upper outer heat preservation cylinder is buckled at the top of a middle heat preservation cylinder, and the thickness of the upper heat preservation cylinder is more than or equal to that of the middle heat preservation cylinder, thereby reducing the heat loss, further reducing the material melting time of silicon materials and reducing the energy consumption; in the equal-diameter growth stage, the upper and outer heat-insulating cylinders are lifted upwards under the action of the lifting mechanism, and the thickness of the upper heat-insulating cylinder is smaller than that of the middle heat-insulating cylinder, so that the temperature of the upper part of the thermal field is reduced, the longitudinal temperature gradient of the thermal field is improved, the equal-diameter growth speed of crystals is improved, and the energy consumption of the production of the silicon single crystal rod is reduced.
Secondly, the single crystal furnace provided by the utility model adopts the heat preservation cylinder structure for the single crystal furnace, so that the heat loss can be reduced in the melting stage, the melting time of silicon materials is reduced, and the energy consumption is reduced; the temperature of the upper part of the thermal field can be reduced in the isometric growth stage, the longitudinal temperature gradient of the thermal field is improved, the isometric growth speed of crystals is improved, and the energy consumption of the production of the silicon single crystal rod is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
The present invention will be further explained with reference to the accompanying drawings:
FIG. 1 is a full sectional view of a thermal insulating cylinder structure for a single crystal furnace according to the present invention in a melting stage;
FIG. 2 is a full sectional view of the heat-insulating cylinder structure for the single crystal furnace according to the present invention at the stage of isometric growth;
FIG. 3 is a full sectional view of the single crystal furnace of the present invention in the melt stage;
FIG. 4 is a full sectional view of the single crystal growing furnace of the present invention in an isometric growth stage;
1. a bottom insulation board; 2. a lower heat-preserving cylinder; 3. a middle heat-preserving cylinder; 4. an upper heat preservation cylinder; 5. an upper insulation board; 6. a lifting mechanism; 7. a fixing assembly; 8. a heater; 9. a quartz crucible; 10. a silicon melt; 11. a draft tube; 12. a silicon crystal; 13. seed crystal; 14. pulling a seed crystal rod; 15. a trunnion shaft; 16. a single crystal furnace cavity; 17. a crucible support; 18. a reflective plate; 41. an upper outer heat preservation cylinder; 42. an upper inner heat preservation cylinder; 61. fixing a bracket; 62. a connecting arm; 63. a connecting pipe; 64. a hoisting sleeve; 65. a pen-shaped cylinder.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
It should be noted that all the directional indicators (such as upper, lower, left, right, front and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the motion situation, etc. in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, descriptions in the present application as to "first", "second", and the like are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit to the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present application, unless expressly stated or limited otherwise, the terms "connected" and "fixed" are to be construed broadly, e.g., "fixed" may be fixedly connected or detachably connected, or integrally formed; the connection can be mechanical connection, electrical connection, physical connection or wireless communication connection; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In addition, the technical solutions between the embodiments of the present invention can be combined with each other, but it is necessary to be able to be realized by a person having ordinary skill in the art as a basis, and when the technical solutions are contradictory or cannot be realized, the combination of such technical solutions should be considered to be absent, and is not within the protection scope of the present invention.
Example one
The heat preservation cylinder structure for the single crystal furnace shown in fig. 1 to 2 is mainly used for performing heat preservation and heat insulation, reducing heat loss and reducing energy consumption in the single crystal furnace; the heat insulation device comprises a bottom high-temperature plate 1, a lower heat insulation cylinder 2, a middle heat insulation cylinder 3, an upper heat insulation cylinder 4 and an upper heat insulation plate 5 which are matched with each other and are sequentially connected from bottom to top; specifically, the bottom high-temperature plate 1 is fixed at the bottom of the single crystal furnace, the lower heat-insulating cylinder 2 is fixedly installed on the bottom high-temperature plate 1, the middle heat-insulating cylinder 3 is hermetically buckled on the lower heat-insulating cylinder 2, the upper heat-insulating cylinder 4 is hermetically buckled on the middle heat-insulating cylinder 3, the upper heat-insulating plate 5 is fixedly installed at the upper end of the upper heat-insulating cylinder 4, and all components can be fixed through bolt assemblies or buckle assemblies; the joined bodies form a one-step sealed open-topped cavity.
Preferably, the upper heat-insulating cylinder 4 comprises an upper outer heat-insulating cylinder 41 and an upper inner heat-insulating cylinder 42 which are parallel to each other, the upper inner heat-insulating cylinder 42 is fixed at the top of the middle heat-insulating cylinder 3, the upper outer heat-insulating cylinder 41 is fixedly connected with the lifting mechanism 6 and can reciprocate up and down relative to the upper inner heat-insulating cylinder 42 under the driving action of the lifting mechanism 6, when the upper outer heat-insulating cylinder 41 is in a lower-stage stroke, the upper outer heat-insulating cylinder 41 and the upper inner heat-insulating cylinder 42 are in an overlapped state, and when the upper outer heat-insulating cylinder 41 is in an upper-stage stroke, the upper outer heat-insulating cylinder 41 and the upper inner heat-insulating cylinder 42 are in a staggered state. In this embodiment, the sum of the thicknesses of the upper outer heat-preserving cylinder 41 and the upper inner heat-preserving cylinder 42 is greater than the thickness of the middle heat-preserving cylinder 3, and the thickness of the upper inner heat-preserving cylinder 42 is less than the thickness of the middle heat-preserving cylinder 3.
In another embodiment of the present invention, the sum of the thicknesses of the upper outer heat-preserving cylinder 41 and the upper inner heat-preserving cylinder 42 is equal to the thickness of the middle heat-preserving cylinder 3.
More specifically, the lifting mechanism 6 comprises a fixed bracket 61 with one end connected with the upper outer heat-preserving cylinder 41, the other end of the fixed bracket 61 is connected with one end of a connecting arm 62, the other end of the connecting arm 62 is connected with one end of a connecting pipe 63, the other end of the connecting pipe 63 is connected with one end of a lifting sleeve 64, the other end of the lifting sleeve 64 is connected with a pen-shaped air cylinder 65, and the pen-shaped air cylinder 65 is connected with an external power supply; the fixed bracket 61 is fixedly connected with the upper outer heat-insulating cylinder 41 through a fixed assembly 7; the fixed bracket 61, the connecting arm 62, the connecting pipe 63 and the lifting sleeve 64 can be lifted under the driving action of the pen-shaped air cylinder 65, so that the upper and lower heat-insulating cylinders 41 are driven to reciprocate up and down.
Preferably, the fixing component 7 is a bolt nut made of a carbon/carbon composite material, the density of the carbon/carbon composite material is more than or equal to 1.3g/cm3, the bending strength of the carbon/carbon composite material is more than or equal to 80Mpa, and the carbon/carbon composite material is a high-performance composite material of a carbon fiber reinforced carbon matrix so as to meet the working strength and the environment in the single crystal furnace.
In this embodiment, the gap between the upper outer heat-insulating cylinder 41 and the upper inner heat-insulating cylinder 42 is 1mm, which ensures smooth lifting of the upper outer heat-insulating cylinder 41 by the lifting mechanism 6.
Preferably, the thickness of the upper outer heat-preserving cylinder 41 is greater than or equal to that of the upper inner heat-preserving cylinder 42, so as to ensure that the longitudinal temperature gradient of the thermal field is increased as much as possible in the equal-diameter growth stage; in this embodiment, the thickness of the upper outer heat-preserving cylinder 41 is 30mm, and the thickness of the upper inner heat-preserving cylinder 42 is 30 mm.
The specific use process of the embodiment is as follows:
firstly, fixedly installing a lower heat-insulating cylinder 2 on a bottom high-temperature plate 1, sealing and buckling an intermediate heat-insulating cylinder 3 on the lower heat-insulating cylinder 2, sealing and buckling an upper heat-insulating cylinder 4 on the intermediate heat-insulating cylinder 3, and fixedly installing an upper heat-insulating plate 5 at the upper end of the upper heat-insulating cylinder 4 to complete the assembly of the embodiment, then integrally installing the embodiment into a single crystal furnace, and fixing the bottom high-temperature plate 1 at the bottom of the single crystal furnace; in the material melting stage, the upper outer heat-insulating cylinder 41 is buckled at the top of the middle heat-insulating cylinder 3, namely is in an overlapped state with the upper inner heat-insulating cylinder 42, and at the moment, the thickness of the upper heat-insulating cylinder 4, namely the sum of the thicknesses of the upper outer heat-insulating cylinder 41 and the upper inner heat-insulating cylinder 42, is greater than the thickness of the middle heat-insulating cylinder 3, so that the loss of heat is reduced, the material melting time of a silicon material is further reduced, and the energy consumption is reduced; in the equal-diameter growth stage, the upper outer heat-insulating cylinder 41 is lifted above the upper inner heat-insulating cylinder 42 by the lifting mechanism 6, namely, the upper outer heat-insulating cylinder and the upper inner heat-insulating cylinder are in a staggered state, and at the moment, the sum of the thicknesses of the upper outer heat-insulating cylinder 41 and the upper inner heat-insulating cylinder 42 on the thickness of the upper heat-insulating cylinder 4 is smaller than the thickness of the middle heat-insulating cylinder 3, so that the temperature of the upper part of a thermal field is reduced, the longitudinal temperature gradient of the thermal field is improved, the equal-diameter growth speed of crystals is further improved, and the energy.
Example two
Another heat-insulating cylinder structure for a single crystal furnace as shown in fig. 1 to 2 comprises a bottom high-temperature plate 1, a lower heat-insulating cylinder 2, an intermediate heat-insulating cylinder 3, an upper heat-insulating cylinder 4 and an upper heat-insulating plate 5 which are matched with each other and sequentially connected, wherein the upper heat-insulating cylinder 4 comprises an upper outer heat-insulating cylinder 41 and an upper inner heat-insulating cylinder 42, the upper outer heat-insulating cylinder 41 is fixedly connected with a lifting mechanism 6 and can reciprocate up and down relative to the upper inner heat-insulating cylinder 42 under the driving action of the lifting mechanism 6, the sum of the thicknesses of the upper outer heat-insulating cylinder 41 and the upper inner heat-insulating cylinder 42 is greater than or equal to the thickness of the intermediate heat-insulating cylinder 3, and the thickness of the upper inner heat-insulating cylinder 42 is less than the thickness.
Specifically, the lifting mechanism 6 comprises a fixed bracket 61 with one end connected with the upper outer heat-insulating cylinder 41, the other end of the fixed bracket 61 is connected with one end of a connecting arm 62, the other end of the connecting arm 62 is connected with one end of a pipe 63, the other end of the connecting pipe 63 is connected with one end of a lifting sleeve 64, and the other end of the lifting sleeve 64 is connected with a pen-shaped air cylinder 65; the fixing bracket 61 and the connecting arm 62, the connecting arm 62 and the connecting pipe 63, and the connecting pipe 63 and the lifting sleeve 64 are fixedly connected by bolt assemblies.
The difference from the first embodiment is that: in this embodiment, the upper outer heat-insulating cylinder 41 and the upper inner heat-insulating cylinder 42 are parallel to each other, and the gap between the two cylinders is 5 mm; the thickness of going up outer heat preservation section of thick bamboo 41 is 50mm, the thickness of going up interior heat preservation section of thick bamboo 42 is 45 mm. The rest of the process is the same as the first embodiment.
EXAMPLE III
A single crystal furnace as shown in fig. 3 to 4, which comprises a single crystal furnace cavity 16, a heater 8, a supporting rod shaft 15, a crucible holder 17, a quartz crucible 9, a draft tube 11, a seed crystal pull rod 14 and a reflecting plate 18, wherein the heater 8, the supporting rod shaft 15, the crucible holder 17, the quartz crucible 9, the draft tube 11, the seed crystal pull rod 14 and the reflecting plate 18 are arranged in the single crystal furnace cavity 16, and the single crystal furnace also comprises a heat preservation tube structure for the single crystal furnace as described in the first embodiment or the second embodiment, wherein the outer edge of the heat preservation tube structure for the single crystal furnace is close to the inner wall of the single crystal furnace cavity 16, and the; the silicon melt 10 is placed in the quartz crucible 9, the seed crystal 13 is attached to the seed crystal pull rod 14, and the silicon melt 10 and the seed crystal 13 react to produce the silicon crystal 12.
More specifically, the reflecting plate 18 is fixed at the bottom of the single crystal furnace cavity 16, the heater 8 is fixedly mounted above the reflecting plate 18 through a bolt assembly, one end of the trunnion shaft 15 extends out of the bottom of the single crystal furnace cavity 16, and the other end of the trunnion shaft sequentially penetrates through the bottom plate of the single crystal furnace cavity 16, the bottom heat-insulating plate 1 and the reflecting plate 18 from bottom to top to be connected with the crucible support 17, the quartz crucible 9 is fixedly placed on the crucible support 17, the draft tube 11 is placed above the quartz crucible 9, and the top of the draft tube is fixed on the upper heat-insulating plate 5 through a bolt assembly.
In the melting stage, the support rod shaft 15, the crucible support 17 and the quartz crucible 9 are in the lower-stage stroke, and an upper outer heat-insulating cylinder 41 of the heat-insulating cylinder structure for the single crystal furnace is buckled at the top of the middle heat-insulating cylinder 3;
in the equal-diameter growth stage, the support rod shaft 15, the crucible support 17 and the quartz crucible 9 are in the upper section of stroke, and the upper outer heat-insulating cylinder 41 of the heat-insulating cylinder structure for the single crystal furnace is lifted above the upper inner heat-insulating cylinder 42 by the lifting mechanism 6.
In specific use, the use method of the heat preservation cylinder structure for the single crystal furnace refers to the first embodiment, and the rest parts are the same as the use method in the prior art, and are not described herein again. Production experiments prove that the single crystal furnace provided by the utility model can reduce the time for 1-3 hours in the melting stage and reduce the energy consumption by 20% -30%; in the stage of equal-diameter growth, the equal-diameter growth speed of the crystal is increased to 1.2-1.4 mm/min from the original 0.8-1.0 mm/min, the average equal-diameter growth time is reduced to 23-27 h from 30-33 h, the production efficiency of crystal pulling is obviously improved, and the production energy consumption is reduced to 400-650 KW.h.
The above only be the preferred embodiment of the utility model discloses a not consequently restriction the utility model discloses a patent range, all are in the utility model discloses a conceive, utilize the equivalent structure transform of what the content was done in the description and the attached drawing, or direct/indirect application all is included in other relevant technical field the utility model discloses a patent protection within range.
Claims (10)
1. The utility model provides a heat preservation cylinder structure for single crystal growing furnace, includes bottom high temperature board (1), a lower heat preservation cylinder (2), well heat preservation cylinder (3), an upper heat preservation cylinder (4) and an upper heat preservation board (5) that match each other and connect gradually, its characterized in that: go up heat preservation section of thick bamboo (4) including last outer heat preservation section of thick bamboo (41) and last interior heat preservation section of thick bamboo (42) that are parallel to each other, it is fixed in to go up interior heat preservation section of thick bamboo (42) the top of well heat preservation section of thick bamboo (3), go up outer heat preservation section of thick bamboo (41) fixed connection hoist mechanism (6) and can be in hoist mechanism's (6) drive effect down for go up interior heat preservation section of thick bamboo (42) do reciprocating motion from top to bottom.
2. The heat-preserving cylinder structure for the single crystal furnace according to claim 1, characterized in that: the lifting mechanism (6) comprises a fixed support (61) with one end connected with the upper outer heat-insulating cylinder (41), the other end of the fixed support (61) is connected with one end of a connecting arm (62), the other end of the connecting arm (62) is connected with one end of a connecting pipe (63), the other end of the connecting pipe (63) is connected with one end of a lifting sleeve (64), and the other end of the lifting sleeve (64) is connected to a pen-shaped cylinder (65);
the lifting sleeve (64), the connecting pipe (63), the connecting arm (62) and the fixing bracket (61) simultaneously reciprocate up and down under the action of the pen-shaped air cylinder (65).
3. The heat-preserving cylinder structure for the single crystal furnace according to claim 1, characterized in that: the sum of the thicknesses of the upper outer heat-insulating cylinder (41) and the upper inner heat-insulating cylinder (42) is greater than or equal to the thickness of the middle heat-insulating cylinder (3), and the thickness of the upper inner heat-insulating cylinder (42) is less than the thickness of the middle heat-insulating cylinder (3).
4. The heat-preserving cylinder structure for the single crystal furnace according to claim 3, characterized in that: the gap between the upper outer heat-insulating cylinder (41) and the upper inner heat-insulating cylinder (42) is 1-5 mm.
5. The heat-preserving cylinder structure for the single crystal furnace according to claim 4, characterized in that: the thickness of the upper outer heat-insulating cylinder (41) is 30-50 mm, and the thickness of the upper inner heat-insulating cylinder (42) is 30-45 mm.
6. The heat-preserving cylinder structure for the single crystal furnace according to claim 2, characterized in that: the fixed support (61) is fixedly connected with the upper outer heat-insulating cylinder (41) through a fixed assembly (7).
7. The heat-preserving cylinder structure for the single crystal furnace according to claim 6, characterized in that: the fixing component (7) is a bolt and a nut made of carbon/carbon composite materials.
8. The utility model provides a single crystal growing furnace, includes single crystal growing furnace cavity (16) and places in heater (8), support rod axle (15), crucible support (17), quartz crucible (9), draft tube (11) and seed crystal pull rod (14) of single crystal growing furnace cavity (16), its characterized in that: the single crystal furnace heat preservation cylinder structure for the single crystal furnace further comprises the heat preservation cylinder structure as claimed in any one of claims 1 to 7, wherein the outer edge of the heat preservation cylinder structure for the single crystal furnace is close to the inner wall of the single crystal furnace cavity (16), and the quartz crucible (9), the supporting rod shaft (15) and the crucible holder (17) do up-and-down reciprocating movement relative to the single crystal furnace cavity (16).
9. A single crystal growing furnace according to claim 8, wherein: a silicon melt (10) is placed in the quartz crucible (9), a seed crystal (13) is attached to the seed crystal pull rod (14), and the silicon melt (10) and the seed crystal (13) react to generate a silicon crystal (12);
in the material melting stage, the support rod shaft (15), the crucible support (17) and the quartz crucible (9) are in the lower-section stroke, and an upper outer heat-insulating cylinder (41) of the heat-insulating cylinder structure for the single crystal furnace is buckled at the top of the heat-insulating cylinder (3);
in the equal-diameter growth stage, the trunnion shaft (15), the crucible support (17) and the quartz crucible (9) are in an upper-stage stroke, and an upper outer heat-insulating cylinder (41) of the heat-insulating cylinder structure for the single crystal furnace is lifted above the upper inner heat-insulating cylinder (42) by the lifting mechanism (6).
10. A single crystal growing furnace according to claim 9, wherein: the single crystal furnace also comprises a reflecting plate (18) fixed at the upper end of the bottom heat-insulating plate (1) of the heat-insulating cylinder structure for the single crystal furnace.
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| CN202020245510.6U CN211814710U (en) | 2020-03-03 | 2020-03-03 | Heat preservation cylinder structure for single crystal furnace and single crystal furnace |
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| CN202020245510.6U CN211814710U (en) | 2020-03-03 | 2020-03-03 | Heat preservation cylinder structure for single crystal furnace and single crystal furnace |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024016994A1 (en) * | 2022-07-18 | 2024-01-25 | Tcl Zhonghuan Renewable Energy Technology Co., Ltd. | Upper cylinder for single crystal furnace |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024016994A1 (en) * | 2022-07-18 | 2024-01-25 | Tcl Zhonghuan Renewable Energy Technology Co., Ltd. | Upper cylinder for single crystal furnace |
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