CN211718660U - PSM4/AOC light emission chip - Google Patents
PSM4/AOC light emission chip Download PDFInfo
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- CN211718660U CN211718660U CN202020450803.8U CN202020450803U CN211718660U CN 211718660 U CN211718660 U CN 211718660U CN 202020450803 U CN202020450803 U CN 202020450803U CN 211718660 U CN211718660 U CN 211718660U
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Abstract
The utility model discloses a PSM4 AOC light emission chip, this chip integration have four MZ electro-optic modulators and four lasers, and four lasers bond in proper order on the substrate, be equipped with SiO on the substrate2Layer of said SiO2A Si layer is arranged on the layer; the MZ electro-optical modulators respectively comprise a PLC waveguide combiner, a PLC waveguide splitter and a pair of silicon waveguide phase shift arms; four MZ electro-optic modulatorsThe PLC waveguide combiner and the splitter are arranged on SiO2In the layer, silicon waveguide phase shift arms of the four MZ electro-optic modulators are all arranged on the Si layer; and optical signals output by the four lasers are respectively end-coupled into the PLC waveguide splitters of the four MZ electro-optic modulators. The utility model discloses a light emission chip has high modulation rate, the technological advantage of low piece light loss concurrently to can directly realize the low-loss end-face coupling with single mode fiber array at the light-emitting end.
Description
Technical Field
The utility model relates to an integrated light transceiver chip technical field, concretely relates to PSM4 AOC light emission chip.
Background
The integrated optical transceiver chip is a core device in an optical transceiver module, has important and wide application in optical communication and data interconnection systems, and the integrated optical transceiver chip technology is also a key technology which breaks through foreign technology monopoly to realize the urgent need of breaking through the autonomy of the core chip in China at present. The silicon-based integrated optical transceiver chip supports 100G/400G or even 800G high-speed transmission, supports a COB packaging process, and has great advantages in integration level and cost.
A100G/400G silicon-based integrated optical Transmission (TX) chip integrates an optical waveguide, 4 MZ electro-optic modulators and 4 lasers with different wavelengths. At present, the integrated light emitting chip based on the pure silicon waveguide has great advantages in the aspects of single-channel modulation rate, the number of integratable channels and the integration level of the whole chip compared with other technical schemes, wherein the single-channel modulation rate can reach more than 50Gbps, and the single-fiber light emission of more than 400Gbps can be realized by the 4-channel integrated light emitting chip by applying the PAM4 modulation technology. However, the integrated optical transmitting chip based on the pure silicon waveguide has a disadvantage of too large optical loss, which results in too weak transmitting optical signal or too large power consumption, and the application is greatly limited. The optical loss in the chip mainly comes from the loss of the MZ electro-optic modulator, the coupling loss of the laser and the silicon waveguide, and the mode field mismatch between the silicon waveguide and the single-mode fiber is large, so that the mode spot conversion needs to be realized through a complex structure.
Disclosure of Invention
The to-be-solved technical problem of the utility model is to provide a PSM4 AOC light emission chip has high modulation rate, the technical advantage of optical loss on the low piece concurrently to can directly realize low-loss end-face coupling with single mode fiber array at the end of giving out light.
In order to solve the technical problem, the utility model provides a PSM4 AOC light emission chip, including four MZ electro-optic modulators and the different laser instrument of four wavelengths, four laser instruments bond in proper order on the substrate, be equipped with SiO on the substrate2Layer of said SiO2A Si layer is arranged on the layer;
the MZ electro-optical modulators respectively comprise a PLC waveguide combiner, a PLC waveguide splitter and a pair of silicon waveguide phase shift arms; the PLC waveguide combiners and the PLC waveguide splitters of the four MZ electro-optic modulators are all arranged on SiO2In the layer, the silicon waveguide phase shift arms of the four MZ electro-optic modulators are all arranged on the Si layer;
the two branches of the PLC waveguide branching unit forming the MZ electro-optic modulator are respectively communicated with the pair of silicon waveguide phase shift arm optical paths based on evanescent wave coupling, and the two branches of the PLC waveguide branching unit forming the MZ electro-optic modulator are respectively communicated with the pair of silicon waveguide phase shift arm optical paths based on evanescent wave coupling;
and optical signals output by the four lasers are respectively end-coupled to enter the PLC waveguide splitters of the four MZ electro-optic modulators.
The utility model discloses a preferred embodiment, further include on the substrate sculpture have the step groove, four lasers bond in proper order on the step groove.
In a preferred embodiment of the present invention, the SiO is further included2And four PLC waveguides are also arranged in the layer and are respectively connected with the PLC waveguide combiners of the four MZ electro-optic modulators.
In a preferred embodiment of the present invention, the pair of silicon waveguide phase shift arms is formed of SiO2Orthographic projections on the layers are respectively overlapped with the near output ends of the two branches of the PLC waveguide branching unit; the length or/and width of the overlap is related to the coupling efficiency of the evanescent coupling.
In a preferred embodiment of the present invention, it further comprises that the vertical distance between the two-branch near output end of the PLC waveguide splitter and the pair of silicon waveguide phase shift arms is related to the coupling efficiency of evanescent coupling.
The utility model discloses a preferred embodiment, further include the nearly output of two way branches of PLC waveguide branching unit is the back taper structure, the nearly input of two way branches of PLC waveguide combiner is the back taper structure.
In a preferred embodiment of the present invention, the pair of silicon waveguide phase shift arms is formed of SiO2Orthographic projections on the layers are respectively overlapped with the near input ends of the two branches of the PLC waveguide combiner; the length or/and width of the overlap is related to the coupling efficiency of the evanescent coupling.
In a preferred embodiment of the present invention, it further comprises that the vertical distance between the two-path branch near input end of the PLC waveguide combiner and the pair of silicon waveguide phase shift arms is related to the coupling efficiency of evanescent wave coupling.
In a preferred embodiment of the present invention, the Si layer further includes a first electrode, a second electrode and a common electrode, which are parallel to each other, disposed on the Si layer, wherein the common electrode is disposed between the pair of silicon waveguide phase shift arms, the first electrode is disposed on the other side of the first silicon waveguide phase shift arm in parallel, and the second electrode is disposed on the other side of the second silicon waveguide phase shift arm in parallel; and applying a voltage to the first silicon waveguide phase shift arm through the first electrode and the common electrode, and applying a voltage to the second silicon waveguide phase shift arm through the second electrode and the common electrode.
In a preferred embodiment of the present invention, the voltage on the silicon waveguide phase shift arm is related to the output light intensity of the MZ electro-optic modulator.
The utility model has the advantages that:
the utility model discloses a PSM4 AOC light emission chip has following technical advantage:
one of the PSM4/AOC light emitting chip is designed by SiO2The MZ modulator is integrated heterologically on a two-layer structure formed by layers and Si layers, a splitter and a combiner which form the MZ modulator are both based on PLC waveguides, and the PLC waveguides are doped SiO2A waveguide having a small optical transmission loss; the phase shift arm forming the MZ modulator adopts a silicon waveguide phase shift arm to modulate an optical signal, and has higher modulation rate. The branching unit, the combiner and the phase shift arm which are positioned on the heterogeneous layer structure realize optical path communication based on evanescent wave coupling, so that the heterogeneous integrated MZ modulator has the technical advantages of high modulation rate and low transmission optical loss.
Secondly, the PSM4/AOC light emitting chip of the utility model is designed by a substrate and SiO2The PSM4/AOC light emission chip is heterologically integrated on a three-layer structure formed by the layers and the Si layer, four lasers forming the PSM4/AOC light emission chip are bonded on a substrate, and four MZ modulators are all positioned on SiO2Heterogeneous integration on the layer and the Si layer. All devices forming the PSM4/AOC light emitting chip are connected by adopting a PLC waveguide and transmit light signals, and the PLC waveguide is doped SiO2The waveguide has smaller transmission loss, so that the heterogeneous integrated PSM4/AOC light emitting chip has smaller transmission loss, and meanwhile, the PLC waveguide has small mismatch with a single-mode fiber mode field, and can be directly coupled with the single-mode fiber at the light emitting end of the light emitting chip to realize low-loss end face coupling; and the hetero-integrated MZ modulator modulates optical signals by using a silicon waveguide phase shift arm, has higher modulation rate, enables the hetero-integrated PSM4/AOC optical transmission chip to have the technical advantages of high modulation rate and low transmission optical loss at the same time, and can directly realize low-loss end-face coupling with a single-mode optical fiber at the light-emitting end.
Thirdly, adopting Si layer and SiO2Two-layer structure design with laminated layers on top of each other and located in SiO2The PLC waveguide branching device and the PLC waveguide combiner on the layer are communicated with the two silicon waveguide phase shift arms on the Si layer on the basis of evanescent wave coupling, and the heterogeneous integration process of the light emitting chip is effectively simplified.
Drawings
Fig. 1 is a schematic perspective view of a light emitting chip according to a preferred embodiment of the present invention;
FIG. 2 is a schematic perspective view of the light emitting chip shown in FIG. 1;
FIG. 3 is an enlarged view of a portion of FIG. 2;
fig. 4 is a schematic structural diagram of a PLC waveguide splitter.
The reference numbers in the figures illustrate:
1-laser, 3-PLC waveguide, 5-step groove
2-substrate, 4-SiO2Layer, 6-Si layer, 8-first silicon waveguide phase shift arm, 10-second silicon waveguide phase shift arm, 12-PLC waveguide splitter, 14-PLC waveguide combiner, 16-first electrode, 18-second electrode, 20-common electrode, 22-near output end;
Detailed Description
The present invention is further described with reference to the following drawings and specific embodiments so that those skilled in the art can better understand the present invention and can implement the present invention, but the embodiments are not to be construed as limiting the present invention.
Examples
The present embodiment discloses a light emitting chip suitable for a PSM4 optical module or an AOC optical module, and as shown in fig. 1 to 4, the light emitting chip has a substrate 2 and SiO stacked in sequence2Layer 4 and Si layer 6; the light emission chip is monolithically integrated with four MZ electro-optic modulators, four lasers 1 with different wavelengths and four PLC waveguides 3, and the four PLC waveguides 3 are all arranged on SiO2Within layer 4.
The four MZ electro-optic modulators 3 described above are bonded in sequence on the substrate 2. The substrate 2 is provided with a step groove 5 through an etching process, four lasers 1 with different wavelengths are arranged in a linear shape and integrated on the step groove 5 through a bonding process, and the depth of the step groove 5 is uniquely determined by the fact that an output optical waveguide of the laser 1 and a receiving optical waveguide in the MZ electro-optic modulator are on the same plane.
Each of the four MZ electro-optic modulators comprises a PLC waveguide combiner 14, a PLC waveguide splitter 12 and a pair of silicon waveguide phase shift arms; the PLC waveguide combiners 14 and the PLC waveguide shunts 12 of the four MZ electro-optic modulators are arranged on SiO2Within layer 4, the silicon waveguide phase shift arms of the four MZ electro-optic modulators are all disposed on Si layer 6. Here, the PLC waveguide splitter 12 is a splitter for transmitting an optical signal using a PLC waveguide, the PLC waveguide combiner 14 is a combiner for transmitting an optical signal using a PLC waveguide, and the silicon waveguide phase shift arm is a phase shift arm for modulating an optical signal using a silicon waveguide.
Specifically, a silicon waveguide is formed on the Si layer 6 by etching, and then a first silicon waveguide phase shift arm 8 of a PN structure or a PIN structure is formed by doping; and forming a silicon waveguide on the Si layer 6 by etching, and forming a second silicon waveguide phase shift arm 10 with a PN structure or a PIN structure by doping.
Two branches of a PLC waveguide shunt 12 forming the MZ electro-optic modulator are respectively communicated with a first silicon waveguide phase shift arm 8 and a second silicon waveguide phase shift arm 10 through optical paths based on evanescent wave coupling; two branches of a PLC waveguide combiner 14 forming the MZ electro-optic modulator are respectively communicated with a first silicon waveguide phase shift arm 8 and a second silicon waveguide phase shift arm 10 through optical paths based on evanescent wave coupling; the MZ electro-optic modulator is constituted by the PLC waveguide splitter 12, the first silicon waveguide phase shift arm 8, the second silicon waveguide phase shift arm 10, and the PLC waveguide combiner 14. The optical signals output by the four lasers 1 are respectively coupled into the PLC waveguide splitters 12 of the four MZ electro-optic modulators, and the output optical signals of the PLC waveguide combiners 14 of the four MZ electro-optic modulators are respectively coupled out through the four paths of PLC waveguides 3.
The utility model discloses above structural design's heterogeneous integrated light emission chip has following technical advantage:
(1) designed in the SiO2The MZ modulator is integrated heterologically on a two-layer structure formed by layers and Si layers, a splitter and a combiner which form the MZ modulator are both based on PLC waveguides, and the PLC waveguides are doped SiO2A waveguide having a small optical transmission loss; the phase shift arm forming the MZ modulator adopts a silicon waveguide phase shift arm to modulate an optical signal, and has higher modulation rate. The branching unit, the combiner and the phase shift arm which are positioned on the heterogeneous layer structure realize optical path communication based on evanescent wave coupling, so that the heterogeneous integrated MZ modulator has the technical advantages of high modulation rate and low transmission optical loss.
(2) Is designed on the substrate and SiO2The PSM4/AOC light emission chip is heterologically integrated on a three-layer structure formed by the layers and the Si layer, four lasers forming the PSM4/AOC light emission chip are bonded on a substrate, and four MZ modulators are all positioned on SiO2Heterogeneous integration on the layer and the Si layer. All devices forming the PSM4/AOC light emitting chip are connected by adopting a PLC waveguide and transmit light signals, and the PLC waveguide is doped SiO2The waveguide has smaller transmission loss, so that the heterogeneous integrated PSM4/AOC optical transmitting chip has smaller transmission loss; meanwhile, the mismatch between the PLC waveguide and the mode field of the single-mode fiber is small, and the light-emitting end of the light-emitting chip can be directly coupled with the end face of the single-mode fiber with low loss; and the hetero-integrated MZ modulator transmits optical signals by using a silicon waveguide, and a silicon phase shift arm has higher modulation rate, so that the hetero-integrated PSM4/AOC optical transmission chip has the technical advantages of high modulation rate and low transmission optical loss at the same time, and can be directly coupled with a single-mode optical fiber at the light-emitting end to realize low-loss end face coupling.
(3) Using a Si layer and SiO2Two-layer structure design with laminated layers on top of each other and located in SiO2The PLC waveguide branching device and the PLC waveguide combiner on the layer are communicated with the two silicon waveguide phase shift arms on the Si layer on the basis of evanescent wave coupling, and the heterogeneous integration process of the light emitting chip is effectively simplified.
The PLC optical splitter, the PLC optical combiner and two silicon waveguide phase shift arms which are arranged in a layered mode with the PLC optical splitter and the PLC optical combiner to form the MZ electro-optic modulator respectively realize optical path communication based on evanescent wave coupling, and in the technical scheme of the embodiment, the optical coupling efficiency is adjusted in the following modes:
(1) referring to FIG. 2, the first silicon waveguide phase shift arm 8 and the second silicon waveguide phase shift arm 10 are formed in SiO2Orthographic projection on layer 4 respectivelyOverlaps the near output 22 of the two-way branch of the PLC waveguide splitter 12, the length or/and width of the overlap being related to the coupling efficiency of evanescent coupling. In making the silicon-based electro-optic modulator of the present invention, the overlap length or/and width is designed with the goal of maximizing coupling efficiency.
(2) Referring to FIG. 2, the first silicon waveguide phase shift arm 8 and the second silicon waveguide phase shift arm 10 are formed in SiO2The orthographic projections on the layer 4 are respectively overlapped with the near input ends of the two branches of the PLC waveguide combiner 14; the length or/and width of the overlap is related to the coupling efficiency of the evanescent coupling. In making the silicon-based electro-optic modulator of the present invention, the overlap length or/and width is designed with the goal of maximizing coupling efficiency.
(3) The vertical distance between the first branch near output of the PLC waveguide splitter 12 and the first silicon waveguide phase shift arm 8 is related to the coupling efficiency of evanescent coupling between the two. The vertical distance between the near output end of the second branch of the PLC waveguide splitter 12 and the second silicon waveguide phase shift arm 10 is related to the coupling efficiency of evanescent coupling between the two. Make the utility model discloses silica-based electro-optic modulator in-process to the coupling efficiency who obtains the maximize designs the vertical distance between the nearly output of the first branch of PLC waveguide branching unit 12 and first silicon waveguide phase shift arm 8, the vertical distance between the nearly output of the second branch of PLC waveguide branching unit 12 and second silicon waveguide phase shift arm 10 as the target.
(4) The vertical distance between the near input end of the first branch of the PLC waveguide combiner 14 and the first silicon waveguide phase shift arm 8 is related to the coupling efficiency of evanescent coupling between the two. The vertical distance between the near input end of the second branch of the PLC waveguide combiner 14 and the second silicon waveguide phase shift arm 10 is related to the coupling efficiency of evanescent coupling between the two. Make the utility model discloses silica-based electro-optic modulator in-process to the coupling efficiency who obtains the maximize designs perpendicular distance between the nearly input end of first branch of PLC waveguide combiner 14 and first silicon waveguide phase shift arm 8, perpendicular distance between the nearly input end of 14 second branches of PLC waveguide combiner and second silicon waveguide phase shift arm 10 as the target.
In order to further improve the coupling efficiency, referring to fig. 4, the near output ends of the two branches of the PLC waveguide splitter 12 are both in an inverted cone structure, and the near input ends of the two branches of the PLC waveguide combiner 14 are both in an inverted cone structure.
Referring to fig. 1, a first electrode 16, a second electrode 18 and a common electrode 20 are disposed on the Si layer 6 and parallel to each other, the common electrode 20 is disposed between the first silicon waveguide phase shift arm 8 and the second silicon waveguide phase shift arm 10, the first electrode 16 is disposed on the other side of the first silicon waveguide phase shift arm 8 in parallel, and the second electrode 18 is disposed on the other side of the second silicon waveguide phase shift arm 10 in parallel; a voltage is applied to the first silicon waveguide phase shift arm 8 via the first electrode 16 and the common electrode 20, and a voltage is applied to the second silicon waveguide phase shift arm 10 via the second electrode 18 and the common electrode 20. Designing the first silicon waveguide phase shift arm 8 and the second silicon waveguide phase shift arm 10 to share one set of electrodes (i.e., the common electrode 20) enables the overall size of the modulator to be reduced. Of course, the first silicon waveguide phase shift arm 8 and the second silicon waveguide phase shift arm 10 may also each have two independent sets of electrodes, depending on the actual use.
The voltage on the first silicon waveguide phase shift arm 8 and the voltage on the second silicon waveguide phase shift arm 10 are related to the output light intensity of the MZ electro-optic modulator.
The above-mentioned embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. Equivalent substitutes or changes made by the technical personnel in the technical field on the basis of the utility model are all within the protection scope of the utility model. The protection scope of the present invention is subject to the claims.
Claims (10)
1. A PSM4/AOC optical transmission chip comprises four MZ electro-optic modulators and four lasers with different wavelengths, and is characterized in that: four lasers are sequentially bonded on a substrate, and SiO is arranged on the substrate2Layer of said SiO2A Si layer is arranged on the layer;
the MZ electro-optical modulators respectively comprise a PLC waveguide combiner, a PLC waveguide splitter and a pair of silicon waveguide phase shift arms; said IVThe PLC waveguide combiner and the PLC waveguide splitter of the MZ electro-optic modulator are both arranged on SiO2In the layer, the silicon waveguide phase shift arms of the four MZ electro-optic modulators are all arranged on the Si layer;
the two branches of the PLC waveguide branching unit forming the MZ electro-optic modulator are respectively communicated with the pair of silicon waveguide phase shift arm optical paths based on evanescent wave coupling, and the two branches of the PLC waveguide branching unit forming the MZ electro-optic modulator are respectively communicated with the pair of silicon waveguide phase shift arm optical paths based on evanescent wave coupling;
and optical signals output by the four lasers are respectively end-coupled to enter the PLC waveguide splitters of the four MZ electro-optic modulators.
2. The PSM4/AOC optical transmit chip of claim 1, wherein: a step groove is etched on the substrate, and the four lasers are sequentially bonded on the step groove.
3. The PSM4/AOC optical transmit chip of claim 1, wherein: the SiO2And four PLC waveguides are also arranged in the layer and are respectively connected with the PLC waveguide combiners of the four MZ electro-optic modulators.
4. The PSM4/AOC optical transmit chip of claim 1, wherein: the pair of silicon waveguide phase shift arms are arranged on SiO2Orthographic projections on the layers are respectively overlapped with the near output ends of the two branches of the PLC waveguide branching unit; the length or/and width of the overlap is related to the coupling efficiency of the evanescent coupling.
5. The PSM4/AOC optical transmit chip of claim 1, wherein: the vertical distance between the two-branch near output end of the PLC waveguide branching unit and the pair of silicon waveguide phase shift arms is related to the coupling efficiency of evanescent wave coupling.
6. The PSM4/AOC optical transmit chip of claim 1, wherein: the near output ends of the two branches of the PLC waveguide combiner are of inverted cone structures, and the near input ends of the two branches of the PLC waveguide combiner are of inverted cone structures.
7. The PSM4/AOC optical transmission chip as claimed in any one of claims 1 to 6, wherein: the pair of silicon waveguide phase shift arms are arranged on SiO2Orthographic projections on the layers are respectively overlapped with the near input ends of the two branches of the PLC waveguide combiner; the length or/and width of the overlap is related to the coupling efficiency of the evanescent coupling.
8. The PSM4/AOC optical transmission chip as claimed in any one of claims 1 to 6, wherein: the vertical distance between the two branch near input ends of the PLC waveguide combiner and the pair of silicon waveguide phase shift arms is related to the coupling efficiency of evanescent wave coupling.
9. The PSM4/AOC optical transmit chip of claim 1, wherein: the Si layer is provided with a first electrode, a second electrode and a common electrode which are parallel to each other, the common electrode is arranged between the pair of silicon waveguide phase shift arms, the first electrode is arranged on the other side of the first silicon waveguide phase shift arm in parallel, and the second electrode is arranged on the other side of the second silicon waveguide phase shift arm in parallel; and applying a voltage to the first silicon waveguide phase shift arm through the first electrode and the common electrode, and applying a voltage to the second silicon waveguide phase shift arm through the second electrode and the common electrode.
10. The PSM4/AOC optical transmit chip of claim 9, wherein: the voltage on the silicon waveguide phase shift arm is related to the output light intensity of the MZ electro-optic modulator.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111240054A (en) * | 2020-03-31 | 2020-06-05 | 亨通洛克利科技有限公司 | PSM4/AOC light emission chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111240054A (en) * | 2020-03-31 | 2020-06-05 | 亨通洛克利科技有限公司 | PSM4/AOC light emission chip |
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Address after: No. 168 Jiaotong North Road, Wujiang Economic and Technological Development Zone, Suzhou City, Jiangsu Province Patentee after: Suzhou Zhuoyu Photon Technology Co.,Ltd. Address before: 215200 Hengdao 88, Wujiang Economic and Technological Development Zone, Suzhou City, Jiangsu Province Patentee before: HENGTONG ROCKLEY TECHNOLOGY Co.,Ltd. |
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