CN111240055A - Integrated electro-optic modulator - Google Patents

Integrated electro-optic modulator Download PDF

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Publication number
CN111240055A
CN111240055A CN202010247026.1A CN202010247026A CN111240055A CN 111240055 A CN111240055 A CN 111240055A CN 202010247026 A CN202010247026 A CN 202010247026A CN 111240055 A CN111240055 A CN 111240055A
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phase shift
shift arm
silicon waveguide
plc
silicon
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Inventor
王皓
朱宇
陈奔
施伟明
吴邦嘉
沈笑寒
张拥建
洪小刚
邢园园
吴有强
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Hengtong Rockley Technology Co Ltd
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Hengtong Rockley Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/125—Bends, branchings or intersections
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12142—Modulator

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The invention discloses an integrated electro-optical modulator, which comprises SiO arranged in a laminated manner2A layer and a Si layer, the Si layer being provided with a first and a second silicon waveguide phase shift arms, SiO2A PLC waveguide splitter and a combiner are arranged in the layer; two branches of the PLC waveguide branching unit are respectively communicated with the first silicon waveguide phase shift arm and the second silicon waveguide phase shift arm based on evanescent wave coupling; two branches of the PLC waveguide combiner are respectively communicated with the first silicon waveguide phase shift arm and the second silicon waveguide phase shift arm based on evanescent wave coupling. The integrated electro-optic modulator realizes electro-optic modulation by using the PLC waveguide splitter/combiner and the silicon waveguide phase shift arm, not only realizes high-speed electro-optic modulation by using the silicon waveguide phase shift arm, but also realizes low-loss direct coupling of the modulator and an optical fiber by using the characteristic of mode field matching of a PLC waveguide device and a single-mode optical fiber. Solves the problems of the traditional silicon-based electro-optical modulation due to silicon waveguide and single-mode fiber modeLarge field mismatch, need to set up the spot-size converter or vertical coupling grating of the complicated structure to realize the fiber coupling and the great problem of coupling loss.

Description

Integrated electro-optic modulator
Technical Field
The invention relates to the technical field of integrated electro-optical modulators, in particular to an integrated electro-optical modulator.
Background
The integrated optical transceiver chip is a core device in an optical transceiver module, has important and wide application in optical communication and data interconnection systems, and the integrated optical transceiver chip technology is also a key technology which breaks through foreign technology monopoly to realize the urgent need of breaking through the autonomy of the core chip in China at present. The silicon-based integrated optical transceiver chip supports transmission of 100G/400G or even higher speed, supports COB packaging technology, and has great advantages in integration level and cost.
The electro-optical modulator is the most critical device unit in the integrated optical transceiver chip, and the mainstream technical scheme at present is as follows: (1) LiNbO3An electro-optic modulator; (2) MZ modulators based on thin silicon processes and EA modulators based on thick silicon processes; (3) EA modulators based on group iii-v compounds. In recent years, a new silicon-based LiNbO is also provided3MZ modulators of thin films are reported. In these solutions, LiNbO3The electro-optical modulator is too large in size and difficult to be used for an integrated optical transceiver chip, the MZ modulator based on the thin silicon process has the advantages of high modulation rate and integration level, and the like, and simultaneously supports the optical modulation of an O wave band (1.3um wave band) and a C wave band (1.5um wave band), but has large insertion loss and is similar to a single-mode optical fiberCoupling is difficult; the EA modulator based on the thick silicon process also has the advantages of high modulation rate and high integration level, but only supports the light modulation of a C wave band (1.5 um); EA modulator based on three-five family compound has high cost and is difficult to integrate with passive waveguide device, and based on silicon-based LiNbO3The thin-film MZ modulator has the highest modulation rate at present, but has the problems that the coupling with a single-mode fiber is difficult, the production process is still not mature enough, and the like.
Disclosure of Invention
The invention aims to solve the technical problem of providing an integrated electro-optical modulator, which realizes electro-optical modulation by using a PLC waveguide splitter/combiner and a silicon waveguide phase shift arm, not only realizes high-speed electro-optical modulation by using the silicon waveguide phase shift arm, but also realizes low-loss direct coupling of the modulator and an optical fiber by using the characteristic of mode field matching of a PLC waveguide device and a single-mode optical fiber. Therefore, the problems that in the traditional silicon-based electro-optical modulation, due to the fact that the mismatch between a silicon waveguide and a single-mode fiber mode field is large, a mode spot converter or a vertical coupling grating with a complex structure needs to be arranged to achieve fiber coupling, and coupling loss is large are solved.
In order to solve the above technical problems, the present invention provides an integrated electro-optical modulator comprising SiO2Layer of, on the SiO2A Si layer arranged on the layer in a stacking manner, a first silicon waveguide phase shift arm and a second silicon waveguide phase shift arm are arranged on the Si layer, and the SiO layer2A PLC waveguide splitter and a PLC waveguide combiner are arranged in the layer; the two branches of the PLC waveguide branching unit are respectively communicated with the first silicon waveguide phase shift arm and the second silicon waveguide phase shift arm through optical paths based on evanescent wave coupling; two branches of the PLC waveguide combiner are respectively communicated with the first silicon waveguide phase shift arm and the second silicon waveguide phase shift arm based on evanescent wave coupling.
In a preferred embodiment of the present invention, the phase shift arm of the first silicon waveguide and the phase shift arm of the second silicon waveguide are in SiO2Orthographic projections on the layers are respectively overlapped with the near output ends of the two branches of the PLC waveguide branching unit; the length or/and width of the overlap is related to the coupling efficiency of the evanescent coupling.
In a preferred embodiment of the present invention, the PLC waveguide splitter further comprises a vertical distance between the first branch near output end of the PLC waveguide splitter and the first silicon waveguide phase shift arm, wherein the vertical distance is related to the coupling efficiency of evanescent coupling between the first branch near output end of the PLC waveguide splitter and the first silicon waveguide phase shift arm; the vertical distance between the second branch near-output end of the PLC waveguide splitter and the second silicon waveguide phase shift arm is related to the coupling efficiency of evanescent coupling between the second branch near-output end of the PLC waveguide splitter and the second silicon waveguide phase shift arm.
In a preferred embodiment of the present invention, it further includes that the near output ends of the two branches of the PLC waveguide splitter are both reverse tapered structures.
In a preferred embodiment of the present invention, the phase shift arm of the first silicon waveguide and the phase shift arm of the second silicon waveguide are in SiO2Orthographic projections on the layers are respectively overlapped with the near input ends of the two branches of the PLC waveguide combiner; the length or/and width of the overlap is related to the coupling efficiency of the evanescent coupling.
In a preferred embodiment of the present invention, the vertical distance between the first branch near-input end of the PLC waveguide combiner and the first silicon waveguide phase shift arm is related to the coupling efficiency of evanescent coupling therebetween; the vertical distance between the second branch near-input end of the PLC waveguide combiner and the second silicon waveguide phase shift arm is related to the coupling efficiency of evanescent coupling between the second branch near-input end of the PLC waveguide combiner and the second silicon waveguide phase shift arm.
In a preferred embodiment of the present invention, the near input ends of the two branches of the PLC waveguide combiner are both inverted conical structures.
In a preferred embodiment of the present invention, the method further includes forming a silicon waveguide on the Si layer by etching, and forming a first silicon waveguide phase shift arm of a PN structure or a PIN structure by doping; and forming a silicon waveguide on the Si layer by etching, and forming a second silicon waveguide phase shift arm of a PN structure or a PIN structure by doping.
In a preferred embodiment of the present invention, the Si layer further includes a first electrode, a second electrode and a common electrode, which are parallel to each other, disposed on the Si layer, wherein the common electrode is disposed between the first silicon waveguide phase shift arm and the second silicon waveguide phase shift arm, the first electrode is disposed in parallel on the other side of the first silicon waveguide phase shift arm, and the second electrode is disposed in parallel on the other side of the second silicon waveguide phase shift arm; and applying a voltage to the first silicon waveguide phase shift arm through the first electrode and the common electrode, and applying a voltage to the second silicon waveguide phase shift arm through the second electrode and the common electrode.
In a preferred embodiment of the present invention, further comprising the voltage on the first silicon waveguide phase shift arm being related to its modulated output light intensity; and the voltage on the second silicon waveguide phase shifting arm is related to its modulated output light intensity.
The invention has the beneficial effects that: the integrated electro-optic modulator realizes electro-optic modulation by using the PLC waveguide splitter/combiner and the silicon waveguide phase shift arm, not only realizes high-speed electro-optic modulation by using the silicon waveguide phase shift arm, but also realizes low-loss direct coupling of the modulator and an optical fiber by using the characteristic of mode field matching of a PLC waveguide device and a single-mode optical fiber. Therefore, the problems that in the traditional silicon-based electro-optical modulation, due to the fact that the mismatch between a silicon waveguide and a single-mode fiber mode field is large, a mode spot converter or a vertical coupling grating with a complex structure needs to be arranged to achieve fiber coupling, and coupling loss is large are solved. The technical advantages are embodied in the following aspects:
one of the methods adopts a PLC waveguide splitter and a PLC waveguide combiner, wherein the PLC waveguide is doped SiO2A waveguide having a small transmission loss by itself; and because the mode spot is larger and is easier to couple with the single-mode optical fiber, the coupling process of the modulator chip and the optical fiber is greatly simplified while the transmission loss of the modulator is reduced. The technical problems that a silicon-based MZ integrated electro-optic modulator is mismatched with a single-mode fiber mode field too much, coupling is difficult and insertion loss is large in the prior art are solved.
And secondly, a silicon waveguide phase shift arm is adopted to ensure that the modulator has higher modulation rate and supports the rate transmission of the bandwidth of more than 40 GHz.
Thirdly, adopting Si layer and SiO2Two-layer structure design with laminated layers on top of each other and located in SiO2The PLC optical splitter and the PLC optical combiner on the layer are communicated with the two silicon waveguide phase shift arms on the Si layer on the basis of evanescent wave coupling, so that the heterogeneous integration process of the modulator is effectively simplified.
And fourthly, a waveguide splitter, two phase shift arms and a waveguide combiner are adopted to form the MZ integrated electro-optic modulator, the electro-optic modulation is realized based on the optical interference principle, and the optical modulation of an O wave band (1.3um wave band) and a C wave band (1.5um wave band) can be compatible.
Drawings
FIG. 1 is a schematic perspective view of an integrated electro-optic modulator in accordance with a preferred embodiment of the present invention;
FIG. 2 is a schematic side view of the integrated electro-optic modulator of FIG. 1;
FIG. 3 is a schematic perspective view of the integrated electro-optic modulator of FIG. 1;
fig. 4 is a schematic structural diagram of a PLC waveguide splitter.
The reference numbers in the figures illustrate: 2-substrate, 4-SiO2The device comprises a layer, a 6-Si layer, 8-a first silicon waveguide phase shift arm, 10-a second silicon waveguide phase shift arm, 12-a PLC waveguide splitter, 14-a PLC waveguide combiner, 16-a first electrode, 18-a second electrode, 20-a common electrode and 22-a near output end.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
Examples
This embodiment discloses an integrated electro-optical modulator having a substrate 2 and SiO laminated in this order, as shown in FIGS. 1 to 42 Layer 4 and Si layer 6, which heterologically integrates a PLC waveguide splitter, a PLC waveguide combiner and a pair of silicon waveguide phase shift arms.
Specifically, a silicon waveguide is formed on the Si layer 6 by etching, and then a first silicon waveguide phase shift arm 8 of a PN structure or a PIN structure is formed by doping; and forming a silicon waveguide on the Si layer 6 by etching, and forming a second silicon waveguide phase shift arm 10 with a PN structure or a PIN structure by doping.
The above SiO2A PLC waveguide splitter 12 and a PLC waveguide combiner 14 are provided in the layer 4. Here, the PLC waveguide splitter is a splitter for transmitting an optical signal using a PLC waveguide, and the PLC waveguide combiner is a splitter for transmitting an optical signal using a PLC waveguideThe combiner of (1).
The PLC waveguide splitter 12 and the pair of silicon waveguide phase shift arms, and the PLC waveguide combiner 14 and the pair of silicon waveguide phase shift arms, which are arranged in an upper-lower layered manner, implement optical path communication based on the following ways: the two branches of the PLC waveguide branching unit 12 are respectively communicated with the first silicon waveguide phase shift arm 8 and the second silicon waveguide phase shift arm 10 through optical paths based on evanescent wave coupling; the two branches of the PLC waveguide combiner 14 are respectively in optical path communication with the first silicon waveguide phase shift arm 8 and the second silicon waveguide phase shift arm 10 based on evanescent wave coupling.
The integrated electro-optic modulator with the structural design realizes electro-optic modulation by using the PLC waveguide splitter/combiner and the silicon waveguide phase shift arm, not only realizes high-speed electro-optic modulation by using the silicon waveguide phase shift arm, but also realizes low-loss direct coupling of the modulator and an optical fiber by using the characteristic of mode field matching of a PLC waveguide device and a single-mode optical fiber. Therefore, the problems that in the traditional silicon-based electro-optical modulation, due to the fact that the mismatch between a silicon waveguide and a single-mode fiber mode field is large, a mode spot converter or a vertical coupling grating with a complex structure is required to be arranged to realize fiber coupling, and the coupling loss is large are solved, and the technical advantages are embodied in the following aspects:
(1) adopts a PLC waveguide splitter and a PLC waveguide combiner, wherein the PLC waveguide is doped SiO2A waveguide having a small transmission loss by itself; and because the mode spot is larger and is easier to couple with the single-mode optical fiber, the coupling process of the modulator chip and the optical fiber is greatly simplified while the transmission loss of the modulator is reduced. The technical problems that a silicon-based MZ integrated electro-optic modulator is mismatched with a single-mode fiber mode field too much, coupling is difficult and insertion loss is large in the prior art are solved.
(2) The silicon waveguide phase shift arm is adopted to ensure that the modulator has higher modulation rate and supports the transmission of the rate of the bandwidth of more than 40 GHz.
(3) Using a Si layer and SiO2Two-layer structure design with laminated layers on top of each other and located in SiO2The PLC optical splitter and the PLC optical combiner on the layer are communicated with the two silicon waveguide phase shift arms on the Si layer on the basis of evanescent wave coupling, so that the heterogeneous integration process of the modulator is effectively simplified.
(4) The MZ integrated electro-optic modulator is formed by the waveguide splitter, the two phase shifting arms and the waveguide combiner, electro-optic modulation is achieved based on the optical interference principle, and optical modulation of an O wave band (1.3um wave band) and a C wave band (1.5um wave band) can be compatible.
The PLC optical splitter, the PLC optical combiner and two silicon-based phase shift arms which are arranged in a layered mode with the PLC optical splitter and the PLC optical combiner respectively realize optical path communication based on evanescent wave coupling, and in order to obtain maximum coupling efficiency, the invention is realized by the following modes:
(1) referring to FIG. 2, the first silicon waveguide phase shift arm 8 and the second silicon waveguide phase shift arm 10 are formed in SiO2The orthographic projections on the layer 4 are respectively overlapped with the near output ends 22 of the two branches of the PLC waveguide branching unit 12; the length or/and width of the overlap is related to the coupling efficiency of the evanescent coupling. The overlap length or/and width is designed with the goal of maximizing coupling efficiency in making the integrated electro-optic modulator of the present invention.
(2) Referring to FIG. 2, the first silicon waveguide phase shift arm 8 and the second silicon waveguide phase shift arm 10 are formed in SiO2The orthographic projections on the layer 4 are respectively overlapped with the near input ends of the two branches of the PLC waveguide combiner 14; the length or/and width of the overlap is related to the coupling efficiency of the evanescent coupling. The overlap length or/and width is designed with the goal of maximizing coupling efficiency in making the integrated electro-optic modulator of the present invention.
(3) The vertical distance between the first branch near output end of the PLC waveguide branching unit 12 and the first silicon waveguide phase shift arm 8 is related to the coupling efficiency of evanescent coupling between the first branch near output end and the first silicon waveguide phase shift arm; the vertical distance between the near output end of the second branch of the PLC waveguide splitter 12 and the second silicon waveguide phase shift arm 10 is related to the coupling efficiency of evanescent coupling between the two. In the process of manufacturing the integrated electro-optical modulator, the vertical distance between the first branch near output end of the PLC waveguide splitter 12 and the first silicon waveguide phase shift arm 8 and the vertical distance between the second branch near output end of the PLC waveguide splitter 12 and the second silicon waveguide phase shift arm 10 are designed with the aim of obtaining the maximum coupling efficiency.
(4) The vertical distance between the near input end of the first branch of the PLC waveguide combiner 14 and the first silicon waveguide phase shift arm 8 is related to the coupling efficiency of evanescent coupling between the near input end of the first branch and the first silicon waveguide phase shift arm; the vertical distance between the near input end of the second branch of the PLC waveguide combiner 14 and the second silicon waveguide phase shift arm 10 is related to the coupling efficiency of evanescent coupling between the two. In the process of manufacturing the integrated electro-optical modulator, the vertical distance between the first branch near input end of the PLC waveguide combiner 14 and the first silicon waveguide phase shift arm 8 and the vertical distance between the second branch near input end of the PLC waveguide combiner 14 and the second silicon waveguide phase shift arm 10 are designed with the aim of obtaining the maximum coupling efficiency.
In order to further improve the coupling efficiency, referring to fig. 4, the near output ends of the two branches of the PLC waveguide splitter 12 are both in an inverted cone structure, and the near input ends of the two branches of the PLC waveguide combiner 14 are both in an inverted cone structure.
Referring to fig. 1, the Si layer 6 is provided with a first electrode 16, a second electrode 18, and a common electrode 20, which are parallel to each other, the common electrode 20 is provided between the first silicon waveguide phase shift arm 8 and the second silicon waveguide phase shift arm 10, the first electrode 16 is provided in parallel to the other side of the first silicon waveguide phase shift arm 8, and the second electrode 18 is provided in parallel to the other side of the second silicon waveguide phase shift arm 10; a voltage is applied to the first silicon waveguide phase shift arm 8 via the first electrode 16 and the common electrode 20, and a voltage is applied to the second silicon waveguide phase shift arm 10 via the second electrode 18 and the common electrode 20. Designing the first silicon waveguide phase shift arm 8 and the second silicon waveguide phase shift arm 10 to share one set of electrodes (i.e., the common electrode 20) enables the overall size of the modulator to be reduced. Of course, the first silicon waveguide phase shift arm 8 and the second silicon waveguide phase shift arm 10 may also each have two independent sets of electrodes, depending on the actual use.
The voltage on the first silicon waveguide phase shift arm 8 and the voltage on the second silicon waveguide phase shift arm 10 are related to the output light intensity of the integrated electro-optic modulator.
The above-mentioned embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the invention is all within the protection scope of the invention. The protection scope of the invention is subject to the claims.

Claims (10)

1. An integrated electro-optic modulator, characterized by: comprising SiO2Layer of, on the SiO2A Si layer arranged on the layer in a stacking manner, a first silicon waveguide phase shift arm and a second silicon waveguide phase shift arm are arranged on the Si layer, and the SiO layer2A PLC waveguide splitter and a PLC waveguide combiner are arranged in the layer; the two branches of the PLC waveguide branching unit are respectively communicated with the first silicon waveguide phase shift arm and the second silicon waveguide phase shift arm through optical paths based on evanescent wave coupling; two branches of the PLC waveguide combiner are respectively communicated with the first silicon waveguide phase shift arm and the second silicon waveguide phase shift arm based on evanescent wave coupling.
2. The integrated electro-optic modulator of claim 1, wherein: the first silicon waveguide phase shift arm and the second silicon waveguide phase shift arm are arranged on SiO2Orthographic projections on the layers are respectively overlapped with the near output ends of the two branches of the PLC waveguide branching unit; the length or/and width of the overlap is related to the coupling efficiency of the evanescent coupling.
3. The integrated electro-optic modulator of claim 1, wherein: the vertical distance between the first branch near output end of the PLC waveguide splitter and the first silicon waveguide phase shift arm is related to the coupling efficiency of evanescent coupling between the first branch near output end of the PLC waveguide splitter and the first silicon waveguide phase shift arm; the vertical distance between the second branch near-output end of the PLC waveguide splitter and the second silicon waveguide phase shift arm is related to the coupling efficiency of evanescent coupling between the second branch near-output end of the PLC waveguide splitter and the second silicon waveguide phase shift arm.
4. The integrated electro-optic modulator of claim 1, wherein: the near output ends of the two branches of the PLC waveguide branching unit are in inverted cone structures.
5. An integrated electro-optic modulator according to any of claims 1 to 4 wherein: the first silicon waveguide phase shift arm and the second silicon waveguide phase shift arm are arranged on SiO2Orthographic projection on the layer is respectively close to the input of two branches of the PLC waveguide combinerEnd overlap; the length or/and width of the overlap is related to the coupling efficiency of the evanescent coupling.
6. An integrated electro-optic modulator according to any of claims 1 to 4 wherein: the vertical distance between the first branch near input end of the PLC waveguide combiner and the first silicon waveguide phase shift arm is related to the coupling efficiency of evanescent coupling between the first branch near input end of the PLC waveguide combiner and the first silicon waveguide phase shift arm; the vertical distance between the second branch near-input end of the PLC waveguide combiner and the second silicon waveguide phase shift arm is related to the coupling efficiency of evanescent coupling between the second branch near-input end of the PLC waveguide combiner and the second silicon waveguide phase shift arm.
7. An integrated electro-optic modulator according to any of claims 1 to 4 wherein: the near input ends of the two branches of the PLC waveguide combiner are in inverted cone structures.
8. The integrated electro-optic modulator of claim 1, wherein: forming a silicon waveguide on the Si layer through etching, and forming a first silicon waveguide phase shift arm of a PN structure or a PIN structure through doping; and forming a silicon waveguide on the Si layer by etching, and forming a second silicon waveguide phase shift arm of a PN structure or a PIN structure by doping.
9. The integrated electro-optic modulator of claim 8, wherein: the silicon layer is provided with a first electrode, a second electrode and a common electrode which are parallel to each other, the common electrode is arranged between the first silicon waveguide phase shift arm and the second silicon waveguide phase shift arm, the first electrode is arranged on the other side of the first silicon waveguide phase shift arm in parallel, and the second electrode is arranged on the other side of the second silicon waveguide phase shift arm in parallel; and applying a voltage to the first silicon waveguide phase shift arm through the first electrode and the common electrode, and applying a voltage to the second silicon waveguide phase shift arm through the second electrode and the common electrode.
10. The integrated electro-optic modulator of claim 9, wherein: the voltage on the first silicon waveguide phase shift arm is related to the intensity of the modulated output light thereof; and the voltage on the second silicon waveguide phase shifting arm is related to its modulated output light intensity.
CN202010247026.1A 2020-03-31 2020-03-31 Integrated electro-optic modulator Pending CN111240055A (en)

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US20230384519A1 (en) * 2022-05-24 2023-11-30 Taiwan Semiconductor Manufacturing Company Vertical polarizing beamsplitter for photonics

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CN211698499U (en) * 2020-03-31 2020-10-16 亨通洛克利科技有限公司 Integrated electro-optic modulator

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CN113204132A (en) * 2021-05-07 2021-08-03 联合微电子中心有限责任公司 End face coupler and preparation method thereof
CN113204132B (en) * 2021-05-07 2024-06-21 联合微电子中心有限责任公司 End face coupler and preparation method thereof
US20230384519A1 (en) * 2022-05-24 2023-11-30 Taiwan Semiconductor Manufacturing Company Vertical polarizing beamsplitter for photonics
US12050347B2 (en) * 2022-05-24 2024-07-30 Taiwan Semiconductor Manufacturing Company, Ltd. Vertical polarizing beamsplitter for photonics

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Application publication date: 20200605