CN107294606B - Single-mode fiber bidirectional optical transceiver - Google Patents
Single-mode fiber bidirectional optical transceiver Download PDFInfo
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- CN107294606B CN107294606B CN201710616634.3A CN201710616634A CN107294606B CN 107294606 B CN107294606 B CN 107294606B CN 201710616634 A CN201710616634 A CN 201710616634A CN 107294606 B CN107294606 B CN 107294606B
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 56
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Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/25—Arrangements specific to fibre transmission
- H04B10/2589—Bidirectional transmission
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/40—Transceivers
Abstract
The invention provides a single-mode fiber bidirectional optical transceiver, which comprises an optical emission module, an optical receiving module, a mode spot conversion structure and a wavelength division multiplexing module manufactured based on a silicon nitride process; the optical transmitting module is connected with an uplink optical signal transmitting end of the wavelength division multiplexing module, a downlink optical signal receiving end of the wavelength division multiplexing module is coupled and connected with the optical receiving module through a mode spot conversion structure, an optical fiber connecting end of the wavelength division multiplexing module is connected with an optical line terminal through an optical fiber, the optical receiving module, the wavelength division multiplexing module and the mode spot conversion structure are integrated on the same silicon substrate through a silicon photon technology, and the optical transmitting module is integrated on the silicon substrate in a compound mode. The invention can realize the effective coupling between the wavelength division multiplexing module and the light receiving module, between the light emitting module and the optical fiber, has uniform waveguide size, can effectively reduce signal loss, reduces pseudo reflection and is insensitive to the environmental temperature.
Description
Technical Field
The embodiment of the invention belongs to the technical field of optical fiber communication, and particularly relates to a single-mode optical fiber bidirectional optical transceiver.
Background
With the continuous development of optical fiber communication technology, various optical fiber transceiver layers are endless, and great convenience is brought to the transmission of optical network signals.
At present, a conventional BOSA (Bi-Directional Optical Sub-Assembly) component is a photoelectric conversion device integrating transmission and reception, can realize a bidirectional transmission function of an optical signal, and is a main device in the current optical communication device. Bi-directional optical transceiver components typically include lasers, opto-modulators, opto-detectors, transimpedance amplifiers (TIAs), optocouplers, wavelength division multiplexers/demultiplexers, filters, and the like. The lasers, the photoelectric modulators, the photoelectric detectors and the transimpedance amplifiers (TIA) are commonly manufactured by adopting a III-V (InP, gaAs, etc.) compound semiconductor technology, are incompatible with the current silicon semiconductor CMOS (Complementary Metal Oxide Semiconductor ) technology, and need to be assembled with passive optical devices such as optical couplers, wavelength division multiplexers/demultiplexers, filters, etc. to form BOSA components, so that the BOSA components can be applied to optical interconnection application scenarios such as PON (Passive Optical Network ). In addition, because the yield of the III-V composite semiconductor material is low and the manufacturing cost is high, the manufacturing cost, the power consumption and the complexity of the optical transceiver module are increased, the further improvement of the channel density and the integration level of the optical transceiver module is limited, and the problems prevent the application of the traditional optical interconnection technology in the next generation data center, the optical fiber home and the 5G wireless communication.
Silicon photonics (Silicon Photonics) technology, a revolutionary silicon-based optoelectronic technology, solves the above-described problems with conventional optical interconnect systems. The silicon optical chip based on the silicon photon technology adopts a manufacturing process compatible with the traditional silicon-based semiconductor CMOS process, realizes the high integration of an integrated optical circuit and an integrated circuit, and has the advantages of wide bandwidth, high channel density, high integration level, low power consumption and low manufacturing cost based on the BOSA component of the silicon photon technology.
However, since silicon has a very high refractive index, the cross-sectional dimension of the silicon waveguide is far smaller than the cross-section of the optical fiber, which is not beneficial to realizing higher coupling efficiency between the silicon waveguide and the optical fiber, and increases the signal loss of the optical communication link; in addition, the silicon-based waveguide with high contrast is easy to cause pseudo reflection, the non-uniformity of the waveguide size caused by the manufacturing process also causes the change of the effective refractive index of the silicon-based waveguide, and the change of the ambient temperature also has a certain influence on the wavelength selective performance of the silicon-based waveguide. The problems with these silicon-based waveguides have resulted in optical coupling efficiency between silicon-based passive devices and active devices that still have difficulty meeting the requirements of practical commercial optical interconnect applications.
Disclosure of Invention
The embodiment of the invention provides a single-mode fiber bidirectional optical transceiver, which is based on a silicon nitride technology to realize a wavelength division multiplexing module required by the single-mode fiber bidirectional optical transceiver, and utilizes a silicon nitride waveguide to realize optical coupling with the single-mode fiber and other silicon-based active devices, so as to solve a series of problems of the silicon-based waveguide for realizing optical coupling.
The embodiment of the invention provides a single-mode fiber bidirectional optical transceiver, which comprises an optical emission module, an optical receiving module, a mode spot conversion structure and a wavelength division multiplexing module manufactured based on a silicon nitride process;
the optical transmitting module is connected with an uplink optical signal transmitting end of the wavelength division multiplexing module, a downlink optical signal receiving end of the wavelength division multiplexing module is coupled with the optical receiving module through the mode spot conversion structure, an optical fiber connecting end of the wavelength division multiplexing module is connected with an optical line terminal through a single mode fiber, the optical receiving module, the wavelength division multiplexing module and the mode spot conversion structure are integrated on the same silicon substrate through a silicon photon technology, and the optical transmitting module is integrated on the silicon substrate in a compound mode;
the optical transmitting module transmits an uplink optical signal to the wavelength division multiplexing module according to a modulation signal, and the wavelength division multiplexing module transmits the uplink optical signal to the optical line terminal through the single-mode optical fiber;
the wavelength division multiplexing module receives the downlink optical signal sent by the optical line terminal through the single-mode optical fiber, and the optical receiving module receives the downlink optical signal, processes the downlink optical signal and outputs the processed downlink optical signal.
In one embodiment, the mode spot-transforming structure comprises a silicon nitride waveguide, an SOI waveguide, a buffer layer, and a silicon substrate layer;
the silicon nitride waveguide and the SOI waveguide are mutually coupled and connected on the upper surface of the buffer layer, the buffer layer is arranged on the upper surface of the silicon substrate layer, the main section and the side section of the silicon nitride waveguide are rectangular, the main section of one end, close to the silicon nitride waveguide, of the SOI waveguide is conical, the side section of the SOI waveguide is stepped, the main section and the side section of one end, far away from the silicon nitride waveguide, of the SOI waveguide are rectangular, and the diameter of the silicon nitride waveguide is larger than that of the SOI waveguide.
In one embodiment, the end of the silicon nitride waveguide away from the SOI waveguide further comprises a silicon nitride thickening layer, and the main section and the side section of the silicon nitride thickening layer are rectangular.
In one embodiment, the wavelength division multiplexing module is a grating coupler or a one-in-two asymmetric multimode interference demultiplexer.
In one embodiment, the asymmetric multimode interference demultiplexer is an asymmetric mach-zehnder interferometer fabricated based on a silicon nitride process.
In one embodiment, the optical isolation module is connected between the optical emission module and the upstream optical signal transmitting end of the wavelength division multiplexing module, and the optical isolation module prevents downstream optical signals transmitted by the optical line terminal from entering the optical emission module.
In one embodiment, the light receiving module includes a photoelectric conversion unit, an amplifying unit, and a voltage stabilizing unit;
the photoelectric conversion unit is connected between the downlink optical signal receiving end of the wavelength division multiplexing module and the amplifying unit, and the voltage stabilizing unit is connected with the photoelectric conversion unit;
the voltage stabilizing unit outputs a constant working voltage signal to the photoelectric conversion unit, the photoelectric conversion unit converts the downlink optical signal into an electric signal according to the working voltage signal, and the amplifying unit amplifies and outputs the electric signal.
In one embodiment, the amplifying unit includes a transimpedance amplifier connected to the photoelectric conversion unit and a limiting amplifier connected to the transimpedance amplifier.
In one embodiment, the light emitting module includes a laser driving unit and a laser emitting unit;
the laser emission unit is connected between the uplink optical signal transmitting end of the wavelength division multiplexing module and the laser driving unit, the laser driving unit is integrated on the silicon substrate through a silicon photon technology or a 3D (three-dimensional) interposer technology, and the laser emission unit is welded on the silicon substrate;
the laser driving unit sends out a driving signal according to the modulation signal, and the laser emitting unit sends out the uplink optical signal according to the driving signal.
In one embodiment, the light emitting module includes an electro-optic modulation driving unit, a laser emitting unit, and an electro-optic modulation unit;
the electro-optical modulation driving unit and the laser emission unit are both connected with the electro-optical modulation unit, the electro-optical modulation unit is connected with an uplink optical signal sending end of the wavelength division multiplexing module, the electro-optical modulation driving unit is integrated on the silicon substrate through a silicon photon technology or a 3D-interpolator technology, the electro-optical modulation unit is integrated on the silicon substrate through a silicon photon technology, and the laser emission unit is welded on the silicon substrate;
the laser transmitting unit transmits a laser signal, the electro-optical modulation driving unit transmits a driving signal according to a modulation signal, and the electro-optical modulation unit modulates the laser signal according to the driving signal to obtain the uplink optical signal.
The embodiment of the invention realizes the wavelength division multiplexing and demultiplexing of the optical signals by the wavelength division multiplexing module manufactured based on the silicon nitride technology, realizes the effective coupling between the wavelength division multiplexing module and the optical receiving module by adopting the mode spot conversion structure, has uniform waveguide size, can effectively reduce the signal loss, reduces the pseudo reflection and is insensitive to the environmental temperature.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a single mode fiber bi-directional optical transceiver according to one embodiment of the present invention;
FIG. 2 is a schematic side cross-sectional view of a spot-transforming structure according to one embodiment of the invention;
FIG. 3 is a schematic main sectional view of a spot-transforming structure according to one embodiment of the invention;
fig. 4 is a schematic structural diagram of a single-mode fiber bidirectional optical transceiver according to another embodiment of the present invention;
fig. 5 is a schematic structural diagram of a single-mode fiber bidirectional optical transceiver according to still another embodiment of the present invention.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution of an embodiment of the present invention will be clearly described below with reference to the accompanying drawings in the embodiment of the present invention, and it is apparent that the described embodiment is a part of the embodiment of the present invention, but not all the embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
The term "comprising" in the description of the invention and the claims and in the above figures and any variants thereof is intended to cover a non-exclusive inclusion. For example, a process, method, or system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed but may optionally include additional steps or elements not listed or inherent to such process, method, article, or apparatus.
In order to solve the problems of the existing BOSA component based on the silicon photon technology, the embodiment of the invention provides a single-mode fiber bidirectional optical transceiver which is mainly applied to PON (Passive Optical Network ). The PON is mainly composed of an OLT (Optical Line Terminal ) of an optical network central control station, an ODN (Optical Distribution Network ), and ONUs (ONT Optical Network Unit, optical network units) of a user side. The single-mode fiber bidirectional optical transceiver provided by the embodiment of the invention is used as an ONU at a user side.
As shown in fig. 1, one embodiment of the present invention provides a single mode fiber bi-directional optical transceiver 100 including an optical transmitting module 10, an optical receiving module 20, a mode spot transforming structure 30, and a wavelength division multiplexing module 40 fabricated based on a silicon nitride (SiN) process.
In a specific application, the light emitting module may be implemented by a direct modulation or an indirect modulation principle of the light signal. For example, the light emitting module may be composed of a laser driver and a laser, and is realized by a direct modulation principle of an optical signal, that is, the laser driver outputs a modulation signal to directly act on the laser to realize modulation of a laser signal emitted by the laser; the optical transmitting module can also consist of an electro-optical modulation driver, an electro-optical modulator and a laser, and is realized by an indirect modulation principle of an optical signal, namely, after the laser outputs a laser signal, the electro-optical modulation driver drives the electro-optical modulator to output a modulation signal to modulate the laser signal.
In a specific application, optical devices in the light emitting module and the light receiving module are integrated by adopting a silicon photon technology, and electrical devices are integrated by adopting a 3D (three-dimensional) interpolator technology.
In a specific application, the wavelength division multiplexing module can be a grating coupler manufactured based on a silicon nitride process or a one-to-two asymmetric multimode interference demultiplexer.
In a particular application, the asymmetric multimode interference demultiplexer may be in particular an asymmetric Mach-Zehnder interferometer interferometer based on a silicon nitride process.
The connection relationship between each component in the single-mode fiber bidirectional optical transceiver 100 provided in this embodiment is:
the optical transmitting module 10 is connected with an uplink optical signal transmitting end of the wavelength division multiplexing module 40, a downlink optical signal receiving end of the wavelength division multiplexing module 40 is coupled with the optical receiving module 20 through the mode spot conversion structure 30, an optical fiber connecting end of the wavelength division multiplexing module 40 is connected with the optical line terminal 202 through a single mode fiber 201, the optical receiving module 20, the wavelength division multiplexing module 40 and the mode spot conversion structure 30 are integrated on the same silicon substrate through a silicon photon technology, and the optical transmitting module 10 is integrated on the silicon substrate in a composite mode.
In a specific application, the composite integration specifically refers to a composite integration technology comprising both a photoelectric integration technology and a silicon photonics technology.
In a specific application, the optical line terminal specifically refers to an optical communication terminal device with an optical signal sending or receiving function, which is arranged at an optical network center control station.
The working principle of the single-mode fiber bidirectional optical transceiver 100 provided in this embodiment is as follows:
the optical transmitting module 10 transmits an uplink optical signal to the wavelength division multiplexing module 40 according to the modulation signal, and the wavelength division multiplexing module 40 transmits the uplink optical signal to the optical line terminal 202 through the single mode optical fiber 201;
the wavelength division multiplexing module 40 receives the downstream optical signal transmitted by the optical line terminal 202 through the single mode optical fiber 201, and the optical receiving module 20 receives the downstream optical signal and processes the downstream optical signal to output.
In a specific application, the transmission wavelengths of the uplink optical signal and the downlink optical signal are different.
In one embodiment, the wavelength of the uplink optical signal is 1270 nm, and the wavelength of the downlink optical signal is 1577 nm, so that the single-mode optical fiber bidirectional optical transceiver provided by the embodiment can effectively realize multiplexing and demultiplexing of optical signals with wavelengths of 1.3 microns and 1.5 microns.
The embodiment realizes the wavelength division multiplexing and demultiplexing of the optical signals by the wavelength division multiplexing module manufactured based on the silicon nitride technology, realizes the effective coupling between the wavelength division multiplexing module and the optical receiving module by adopting the mode spot conversion structure, has uniform waveguide size, and can effectively reduce the signal loss, reduce the pseudo reflection and be insensitive to the environmental temperature.
As shown in fig. 2 and 3, one embodiment of the present invention schematically illustrates a specific structure of the spot-transforming structure 30.
In a specific application, the mode spot transforming structure may be specifically a mode spot transformer (SSC, spot size converter), and any structure capable of achieving effective coupling between a Silicon nitride waveguide and an SOI (Silicon-On-Insulator), i.e. Silicon On an insulating substrate, may be used, for example, a wedge-shaped coupling structure or a trapezoid-shaped coupling structure, to reduce signal loss.
As shown in fig. 2 and 3, in the present embodiment, the mode-spot-transforming structure 30 includes a silicon nitride waveguide 31, an SOI waveguide 32, a buffer layer 33, and a silicon substrate layer 34, which are fabricated based on a silicon nitride process.
In a specific application, the silicon substrate layer is a silicon substrate made of a silicon material and the buffer layer is an insulating layer made of a silicon dioxide material.
Fig. 2 schematically shows a side cross-sectional view of the spot-transforming structure 30. In this embodiment, as shown in fig. 2, the silicon nitride waveguide 31 and the SOI waveguide 32 are coupled to each other on the upper surface of the buffer layer 33, the buffer layer 33 is disposed on the upper surface of the silicon substrate layer 34, the side section of the silicon nitride waveguide 31 is rectangular, the side section of the SOI waveguide 32 is stepped, the side section of the end of the SOI waveguide 32 away from the silicon nitride waveguide is rectangular, and the diameter of the silicon nitride waveguide 31 is larger than the diameter of the SOI waveguide 32.
Fig. 3 schematically shows a principal cross-sectional view of a spot-transforming structure 30. As shown in fig. 3, in the present embodiment, the main section of the silicon nitride waveguide 31 is rectangular, the main section of the SOI waveguide 32 at the end close to the silicon nitride waveguide 31 is tapered, and the main section of the SOI waveguide 32 at the end far from the silicon nitride waveguide 31 is rectangular.
In one embodiment, an end of the silicon nitride waveguide remote from the SOI waveguide includes a silicon nitride thickening layer. The coupling efficiency between the silicon nitride waveguide and the SOI waveguide can be improved by providing the silicon nitride thickening layer, and the transmission loss can be further reduced.
As shown in fig. 2 and 3, in the present embodiment, the end of the silicon nitride waveguide 31 away from the SOI waveguide 32 includes a silicon nitride thickening layer 311, and the main section and the side section of the silicon nitride thickening layer 311 are rectangular.
In one embodiment, the smallest cross-section of the SOI waveguide near one end of the silicon nitride waveguide has a diameter of less than 80 microns. As shown in fig. 3, the diameter of this smallest cross section is denoted W1.
In a specific application, the cross-sectional shape of the silicon nitride waveguide or the SOI waveguide may be any shape, for example, rectangular, circular, elliptical, regular polygonal, or the like, and the cross-sectional shape of both is not particularly limited in the present embodiment.
The mode spot conversion structure formed by the silicon nitride waveguide and the SOI waveguide in a stepped taper coupling mode can improve the coupling efficiency between the wavelength division multiplexing module and the light receiving module, reduce pseudo reflection and reduce signal loss.
As shown in fig. 4, in one embodiment of the present invention, the optical transmitting module 10 includes a laser driving unit 11 and a laser transmitting unit 12, the optical receiving module 20 includes a photoelectric conversion unit 21, an amplifying unit 22 and a voltage stabilizing unit 23, the wavelength division multiplexing module 40 is an asymmetric mach-zehnder interferometer based on a silicon nitride process, and the single mode fiber bidirectional optical transceiver 100 further includes an optical isolation module 50.
In a specific application, the laser driving unit may be a laser driver made by using a silicon photonics technology or a compatible technology compatible with a silicon semiconductor CMOS technology, and the laser driving unit may be integrated on a silicon substrate by outputting a specific magnitude or constant current signal.
In a specific application, the laser emitting unit may in particular be a laser, e.g. a semiconductor laser, a ruby laser, a helium neon laser, etc.
In one embodiment, the laser emitting unit is a silicon-based laser soldered to a silicon substrate. The silicon-based laser may in particular be a distributed feedback laser (DFB, distributed Feedback Laser).
In a specific application, the photoelectric conversion unit is in particular a photodiode made using silicon photonics technology, for example an avalanche photodiode (APD, avalanche photodiode) or a forward biased PIN photodiode. The use of avalanche photodiodes can compensate for link losses due to fiber distance and multiplexing.
In a specific application, the voltage stabilizing unit is specifically a low dropout linear voltage regulator (LDO, low dropout regulator).
In a specific application, the optical isolation module may be an optical isolator made using silicon photonics technology.
The connection relationship between the components in this embodiment is:
the laser emission unit 12 is connected between the uplink optical signal transmission end of the wavelength division multiplexing module 40 and the laser driving unit 11;
the photoelectric conversion unit 21 is connected between the downstream optical signal receiving end of the wavelength division multiplexing module 40 and the amplifying unit 22, and the voltage stabilizing unit 23 is connected with the photoelectric conversion unit 21;
the optical isolation module 50 is connected between the optical transmission module 10 and the upstream optical signal transmitting end of the wavelength division multiplexing module 40.
The working principle of each component in the embodiment is as follows:
the laser driving unit 11 sends out a driving signal according to the modulation signal, and the laser emitting unit 12 sends out an uplink optical signal according to the driving signal;
the voltage stabilizing unit 23 outputs a constant operating voltage signal to the photoelectric conversion unit 21, the photoelectric conversion unit 21 converts the downstream optical signal into an electrical signal according to the operating voltage signal, and the amplifying unit 22 amplifies and outputs the electrical signal;
the optical isolation module 50 prevents downstream optical signals transmitted by the optical line terminal 202 from entering the optical transmission module 10.
In a specific application, the drive signal is a current signal.
As shown in fig. 5, in one embodiment of the present invention, the optical emission module 10 in fig. 4 may be equivalently replaced with a structure including the electro-optical modulation driving unit 14, the laser emission unit 12, and the electro-optical modulation unit 13, and the amplifying unit 22 includes a transimpedance amplifier (TIA, trans-impedance amplifier) 221 and a limiting amplifier (LA, limiting Amplifier) 222; the electro-optical modulation driving unit 14 and the laser emission unit 12 are both connected with the electro-optical modulation unit 13, the electro-optical modulation unit 13 is connected with an uplink optical signal sending end of the wavelength division multiplexing module 40, the transimpedance amplifier 221 is connected with the photoelectric conversion unit 21, and the limiting amplifier 222 is connected with the transimpedance amplifier 221; the laser emitting unit 12 emits a laser signal, the electro-optical modulation driving unit 14 emits a driving signal according to the modulating signal, and the electro-optical modulation unit 13 modulates the laser signal according to the driving signal to obtain an uplink optical signal.
In a specific application, the transimpedance amplifier and the limiting amplifier are fabricated using silicon photonics technology or a compatible process compatible with silicon semiconductor CMOS processes.
In a specific application, the electro-optical modulation unit may in particular be an electro-optical modulator made using silicon photonics technology, such as a Mach-Zehnder Modulator modulator or an electro-absorption modulator (EAM, electro Absorption Modulator), the electro-optical modulation unit being integrated on a silicon substrate by silicon photonics technology.
In a specific application, the electro-optical modulation driving unit may be an electro-optical modulation driver, and is used for sending a driving signal and driving the electro-optical modulation driving unit to output a modulation signal, where the electro-optical modulation driving unit is integrated on a silicon substrate through a silicon photon technology or a 3D-interpolator technology.
The single-mode fiber bidirectional optical transceiver provided by the embodiment realizes the wavelength division multiplexing and demultiplexing of optical signals through the wavelength division multiplexing module manufactured based on the silicon nitride technology, realizes the effective coupling between the wavelength division multiplexing module and the optical receiving module through adopting the mode spot conversion structure, has uniform waveguide size, can effectively reduce signal loss, reduces pseudo reflection and is insensitive to environmental temperature; the mode spot conversion structure formed by the silicon nitride waveguide and the SOI waveguide in a stepped taper coupling mode can improve the coupling efficiency between the wavelength division multiplexing module and the light receiving module, reduce pseudo reflection and reduce signal loss.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (9)
1. The single-mode fiber bidirectional optical transceiver is characterized by comprising an optical emission module, an optical receiving module, a mode spot conversion structure and a wavelength division multiplexing module manufactured based on a silicon nitride process;
the optical transmitting module is connected with an uplink optical signal transmitting end of the wavelength division multiplexing module, a downlink optical signal receiving end of the wavelength division multiplexing module is coupled with the optical receiving module through the mode spot conversion structure, an optical fiber connecting end of the wavelength division multiplexing module is connected with an optical line terminal through a single mode fiber, the optical receiving module, the wavelength division multiplexing module and the mode spot conversion structure are integrated on the same silicon substrate through a silicon photon technology, and the optical transmitting module is integrated on the silicon substrate in a compound mode;
the optical transmitting module transmits an uplink optical signal to the wavelength division multiplexing module according to a modulation signal, and the wavelength division multiplexing module transmits the uplink optical signal to the optical line terminal through the single-mode optical fiber;
the wavelength division multiplexing module receives the downlink optical signal sent by the optical line terminal through the single-mode optical fiber, and the optical receiving module receives the downlink optical signal, processes the downlink optical signal and outputs the processed downlink optical signal;
the mode spot transformation structure comprises a silicon nitride waveguide, an SOI waveguide, a buffer layer and a silicon substrate layer;
the silicon nitride waveguide and the SOI waveguide are coupled and connected with each other on the upper surface of the buffer layer, the buffer layer is arranged on the upper surface of the silicon substrate layer, the main section of one end, close to the silicon nitride waveguide, of the SOI waveguide is conical, the side section of the main section is stepped, and the diameter of the silicon nitride waveguide is larger than that of the SOI waveguide, so that the coupling efficiency between the wavelength division multiplexing module and the light receiving module is improved, and the pseudo reflection is reduced;
the end, far away from the SOI waveguide, of the silicon nitride waveguide further comprises a silicon nitride thickening layer, and the silicon nitride thickening layer is used for improving the coupling efficiency between the silicon nitride waveguide and the SOI waveguide;
the wavelength division multiplexing module is a grating coupler or a one-to-two asymmetric multimode interference demultiplexer.
2. The single mode fiber bi-directional optical transceiver of claim 1, wherein the silicon nitride waveguide has a rectangular main section and a rectangular side section, and wherein the SOI waveguide has a rectangular main section and a rectangular side section at an end remote from the silicon nitride waveguide.
3. The single mode fiber bi-directional optical transceiver of claim 2, wherein the silicon nitride thickening layer is rectangular in both major and side cross-sections.
4. The single mode optical fiber bi-directional optical transceiver of claim 1, wherein the asymmetric multimode interference splitter is an asymmetric mach-zehnder interferometer fabricated based on a silicon nitride process.
5. The single mode fiber optic bi-directional optical transceiver of claim 1, further comprising an optical isolation module coupled between the optical transmit module and an upstream optical signal transmitting end of the wavelength division multiplexing module, the optical isolation module preventing downstream optical signals transmitted by the optical line terminal from entering the optical transmit module.
6. The single mode fiber bi-directional optical transceiver of claim 1, wherein the optical receiving module comprises a photoelectric conversion unit, an amplifying unit and a voltage stabilizing unit;
the photoelectric conversion unit is connected between the downlink optical signal receiving end of the wavelength division multiplexing module and the amplifying unit, and the voltage stabilizing unit is connected with the photoelectric conversion unit;
the voltage stabilizing unit outputs a constant working voltage signal to the photoelectric conversion unit, the photoelectric conversion unit converts the downlink optical signal into an electric signal according to the working voltage signal, and the amplifying unit amplifies and outputs the electric signal.
7. The single mode fiber bi-directional optical transceiver of claim 6, wherein said amplifying unit comprises a transimpedance amplifier connected to said optical-to-electrical converting unit and a limiting amplifier connected to said transimpedance amplifier.
8. The single mode fiber bi-directional optical transceiver of claim 1, wherein the optical emission module comprises a laser driving unit and a laser emission unit;
the laser emission unit is connected between the uplink optical signal transmitting end of the wavelength division multiplexing module and the laser driving unit, the laser driving unit is integrated on the silicon substrate through a silicon photon technology or a 3D (three-dimensional) interposer technology, and the laser emission unit is welded on the silicon substrate;
the laser driving unit sends out a driving signal according to the modulation signal, and the laser emitting unit sends out the uplink optical signal according to the driving signal.
9. The single mode fiber bi-directional optical transceiver of claim 1, wherein the optical transmitting module comprises an electro-optic modulation driving unit, a laser transmitting unit and an electro-optic modulation unit;
the electro-optical modulation driving unit and the laser emission unit are both connected with the electro-optical modulation unit, the electro-optical modulation unit is connected with an uplink optical signal sending end of the wavelength division multiplexing module, the electro-optical modulation driving unit is integrated on the silicon substrate through a silicon photon technology or a 3D-interpolator technology, the electro-optical modulation unit is integrated on the silicon substrate through a silicon photon technology, and the laser emission unit is welded on the silicon substrate;
the laser transmitting unit transmits a laser signal, the electro-optical modulation driving unit transmits a driving signal according to a modulation signal, and the electro-optical modulation unit modulates the laser signal according to the driving signal to obtain the uplink optical signal.
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| CN107342817A (en) | 2017-08-28 | 2017-11-10 | 苏州海光芯创光电科技有限公司 | A kind of high-speed multiple channel optical module design method and optical module |
| CN115244873A (en) * | 2020-04-17 | 2022-10-25 | 华为技术有限公司 | Light emitting module and optical communication system |
| CN115508954A (en) * | 2021-06-23 | 2022-12-23 | 华为技术有限公司 | Optical transceiver module |
| WO2023060412A1 (en) * | 2021-10-12 | 2023-04-20 | 之江实验室 | 6.4 tbps silicon-based optical engine transceiver chip assembly oriented to high-speed optical communication |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1495447A (en) * | 2002-09-20 | 2004-05-12 | 日本电信电话株式会社 | Optical module and its manufacturing method |
| KR20040052272A (en) * | 2002-12-16 | 2004-06-23 | 한국전자통신연구원 | Spot size converter, Method for manufacturing the same and spot size converter intergrated photodetector |
| CN101055338A (en) * | 2006-04-13 | 2007-10-17 | 中国科学院半导体研究所 | Wave-guide optical switch integrated with light field spot-size converter and its method |
| CN102486550A (en) * | 2010-12-06 | 2012-06-06 | 中国科学院微电子研究所 | Silicon-based composite medium spot size converter and manufacturing method thereof |
| CN102882601A (en) * | 2012-09-10 | 2013-01-16 | 胡朝阳 | Silicon photonic integrated high-speed optical communication transceiver module |
| CN103033881A (en) * | 2012-12-31 | 2013-04-10 | 东南大学 | On-chip periodic variation refractive index lens photon chip three-dimensional coupler and preparation method thereof |
| WO2015011845A1 (en) * | 2013-07-23 | 2015-01-29 | 独立行政法人産業技術総合研究所 | Interlayer lightwave coupling device |
| CN104952734A (en) * | 2015-07-16 | 2015-09-30 | 矽力杰半导体技术(杭州)有限公司 | Semiconductor structure and manufacturing method thereof |
| WO2016011002A1 (en) * | 2014-07-14 | 2016-01-21 | Biond Photonics Inc. | 3d photonic integration with light coupling elements |
| CN106461873A (en) * | 2014-04-30 | 2017-02-22 | 华为技术有限公司 | Inverse taper waveguides for low-loss mode converters |
| CN106646783A (en) * | 2017-02-14 | 2017-05-10 | 上海新微科技服务有限公司 | Silicon-based WDM optical transceiver module |
| CN207200703U (en) * | 2017-07-26 | 2018-04-06 | 深圳市傲科华芯技术有限公司 | A kind of single-mode fiber bidirectional optical transceiver |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3680738B2 (en) * | 2001-01-24 | 2005-08-10 | 日本電気株式会社 | Wavelength multiplexing optical communication module |
| US7013067B2 (en) * | 2004-02-11 | 2006-03-14 | Sioptical, Inc. | Silicon nanotaper couplers and mode-matching devices |
| US10009106B2 (en) * | 2012-05-14 | 2018-06-26 | Acacia Communications, Inc. | Silicon photonics multicarrier optical transceiver |
| KR20140076112A (en) * | 2012-12-12 | 2014-06-20 | 한국전자통신연구원 | Optical line terminal for monitoring and controlling of upstream/downstream optical signals |
| US9274275B2 (en) * | 2013-07-03 | 2016-03-01 | Cisco Technology, Inc. | Photonic integration platform |
| US9912408B2 (en) * | 2014-10-28 | 2018-03-06 | Luxtera, Inc. | Method and system for silicon photonics wavelength division multiplexing transceivers |
| US9829626B2 (en) * | 2016-01-13 | 2017-11-28 | Oracle International Corporation | Hybrid-integrated multi-chip module |
-
2017
- 2017-07-26 CN CN201710616634.3A patent/CN107294606B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1495447A (en) * | 2002-09-20 | 2004-05-12 | 日本电信电话株式会社 | Optical module and its manufacturing method |
| KR20040052272A (en) * | 2002-12-16 | 2004-06-23 | 한국전자통신연구원 | Spot size converter, Method for manufacturing the same and spot size converter intergrated photodetector |
| CN101055338A (en) * | 2006-04-13 | 2007-10-17 | 中国科学院半导体研究所 | Wave-guide optical switch integrated with light field spot-size converter and its method |
| CN102486550A (en) * | 2010-12-06 | 2012-06-06 | 中国科学院微电子研究所 | Silicon-based composite medium spot size converter and manufacturing method thereof |
| CN102882601A (en) * | 2012-09-10 | 2013-01-16 | 胡朝阳 | Silicon photonic integrated high-speed optical communication transceiver module |
| CN103033881A (en) * | 2012-12-31 | 2013-04-10 | 东南大学 | On-chip periodic variation refractive index lens photon chip three-dimensional coupler and preparation method thereof |
| WO2015011845A1 (en) * | 2013-07-23 | 2015-01-29 | 独立行政法人産業技術総合研究所 | Interlayer lightwave coupling device |
| CN106461873A (en) * | 2014-04-30 | 2017-02-22 | 华为技术有限公司 | Inverse taper waveguides for low-loss mode converters |
| WO2016011002A1 (en) * | 2014-07-14 | 2016-01-21 | Biond Photonics Inc. | 3d photonic integration with light coupling elements |
| CN104952734A (en) * | 2015-07-16 | 2015-09-30 | 矽力杰半导体技术(杭州)有限公司 | Semiconductor structure and manufacturing method thereof |
| CN106646783A (en) * | 2017-02-14 | 2017-05-10 | 上海新微科技服务有限公司 | Silicon-based WDM optical transceiver module |
| CN207200703U (en) * | 2017-07-26 | 2018-04-06 | 深圳市傲科华芯技术有限公司 | A kind of single-mode fiber bidirectional optical transceiver |
Non-Patent Citations (1)
| Title |
|---|
| 高阁等.SiN 波分复用器件.《第 十 一 届 全 国 硅 基 光 电 子 材 料 及 器 件 研 讨 会》.2016,第55页. * |
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