CN107294606A - A kind of single-mode fiber bidirectional optical transceiver - Google Patents
A kind of single-mode fiber bidirectional optical transceiver Download PDFInfo
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- CN107294606A CN107294606A CN201710616634.3A CN201710616634A CN107294606A CN 107294606 A CN107294606 A CN 107294606A CN 201710616634 A CN201710616634 A CN 201710616634A CN 107294606 A CN107294606 A CN 107294606A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 142
- 239000000835 fiber Substances 0.000 title claims abstract description 41
- 230000002457 bidirectional effect Effects 0.000 title claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 70
- 239000010703 silicon Substances 0.000 claims abstract description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 69
- 238000005516 engineering process Methods 0.000 claims abstract description 33
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- 238000005859 coupling reaction Methods 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims abstract description 15
- 150000004767 nitrides Chemical class 0.000 claims abstract description 13
- 150000001875 compounds Chemical class 0.000 claims abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 36
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 19
- 238000006243 chemical reaction Methods 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 230000008719 thickening Effects 0.000 claims description 7
- 230000010354 integration Effects 0.000 claims description 6
- 229910003978 SiClx Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims 1
- 230000005622 photoelectricity Effects 0.000 claims 1
- 239000013307 optical fiber Substances 0.000 abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000004891 communication Methods 0.000 description 6
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- 239000000203 mixture Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/25—Arrangements specific to fibre transmission
- H04B10/2589—Bidirectional transmission
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/40—Transceivers
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- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The present invention provides a kind of single-mode fiber bidirectional optical transceiver, including light emission module, Optical Receivers, mode-expansion structure and the Wavelength division multiplexing module made based on nitride process；The uplink optical signal transmitting terminal connection of light emission module and Wavelength division multiplexing module, the downlink optical signal receiving terminal and Optical Receivers of Wavelength division multiplexing module are connected by mode-expansion structure Coupling, the optical fiber joint end of Wavelength division multiplexing module connects optical line terminal by optical fiber, Optical Receivers, Wavelength division multiplexing module and mode-expansion structure are integrated on same silicon chip by silicon photon technology, and light emission module is compound to be integrated on the silicon chip.The efficient coupling between Wavelength division multiplexing module and Optical Receivers, light emission module and optical fiber can be achieved in the present invention, and waveguide dimensions are uniform, can effectively reduce loss of signal, reduce false reflection and insensitive to environment temperature.
Description
Technical field
The embodiment of the present invention belongs to technical field of optical fiber communication, more particularly to a kind of single-mode fiber bidirectional optical transceiver.
Background technology
With continuing to develop for Fibre Optical Communication Technology, various optical fiber transceiving devices emerge in an endless stream, and are the biography of optical network signal
It is defeated to bring great convenience.
At present, traditional BOSA components (Bi-Directional Optical Sub-Assembly, bidirectional light receiving and transmitting group
Part) it is that integral electrooptical device is launched and be received in collection, the transmitted in both directions function of optical signal can be achieved, is current optic communication
Main devices in device.Bidirectional light receiving and transmitting component, generally include laser, electrooptic modulator, photoelectric detector, across resistance amplification
Device (TIA), photo-coupler, Wavelength division multiplexer/demultiplexer, wave filter etc..Wherein, laser, electrooptic modulator, Photoelectric Detection
Device, trans-impedance amplifier (TIA) are generally made using iii-v (InP, GaAs etc.) composite semiconductor technique, with current silicon half
Technique is or not conductor CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor)
It is compatible, it is necessary to fit together composition BOSA with the passive optical device such as photo-coupler, Wavelength division multiplexer/demultiplexer, wave filter
Component, just can apply to the light network application scenarios such as PON (Passive Optical Network, passive optical-fiber network).This
Outside, because the yielding poorly of iii-v composite semiconductor material, manufacturing cost are high, add light transmitting-receiving module manufacturing cost,
Power consumption and complexity, and the channel density of light transmitting-receiving module and the further lifting of integrated level are limited, these problems are hindered
Application of traditional light network technology in further generation data center, fiber entering household and 5G radio communications.
Silicon photon (Silicon Photonics) technology, as a kind of revolutionary Si-based optoelectronics, solves biography
The above mentioned problem that optical interconnection system of uniting is present.Silicon optical chip based on silicon photon technology is used and traditional silicon-based semiconductor CMOS works
The compatible manufacturing process of skill, realizes highly integrated, the BOSA components based on silicon photon technology of integrated optical circuit and integrated circuit,
Have the advantages that wide bandwidth, channel density are high, integrated level is high, low in energy consumption, manufacturing cost is low.
However, because silicon has very high refractive index, the sectional dimension of silicon waveguide is far smaller than the section of optical fiber, is unfavorable for
Higher coupling efficiency is realized between silica-based waveguides and optical fiber, the loss of signal of optical communication link is added；In addition, high contrast
The silica-based waveguides of degree easily cause false reflection, the inhomogeneities of the waveguide dimensions caused by its manufacturing process, can also cause silicon substrate
The change of waveguide effective index, and variation of ambient temperature also can cause certain shadow to the wavelength selectivity of silicon waveguide
Ring.It is full that the problem of these silica-based waveguides are present causes the coupling efficiency between the passive device of silicon substrate and active device to be still difficult to
The requirement of the commercial light network application in full border.
The content of the invention
The embodiment of the present invention provides a kind of single-mode fiber bidirectional optical transceiver, and it realizes single-mode fiber based on nitride process
Wavelength division multiplexing module needed for bidirectional optical transceiver, and realized and single-mode fiber and other silicon substrate actuators using silicon nitride waveguides
The optical coupling of part, and then silica-based waveguides are solved for realizing optical coupled existing a series of problems.
The embodiment of the present invention provides a kind of single-mode fiber bidirectional optical transceiver, it include light emission module, Optical Receivers,
Mode-expansion structure and the Wavelength division multiplexing module made based on nitride process；
The light emission module is connected with the uplink optical signal transmitting terminal of the Wavelength division multiplexing module, the wavelength-division multiplex mould
The downlink optical signal receiving terminal and Optical Receivers of block are connected by the mode-expansion structure Coupling, the Wavelength division multiplexing module
Optical fiber joint end optical line terminal, the Optical Receivers, the Wavelength division multiplexing module and described are connected by single-mode fiber
Mode-expansion structure is integrated on same silicon chip by silicon photon technology, and the light emission module is compound to be integrated in the silicon substrate
On piece；
The light emission module sends uplink optical signal to the Wavelength division multiplexing module according to modulated signal, and the wavelength-division is answered
The uplink optical signal is sent to the optical line terminal by the single-mode fiber with module；
The Wavelength division multiplexing module receives the downlink optical signal that the optical line terminal is sent, institute by the single-mode fiber
Optical Receivers is stated to receive the downlink optical signal and export after handling the downlink optical signal.
In one embodiment, the mode-expansion structure includes silicon nitride waveguides, SOI waveguides, cushion and silicon substrate
Layer；
The silicon nitride waveguides and the SOI waveguides intercouple connection, the buffering in the upper surface of the cushion
Layer is arranged on the upper surface of the layer-of-substrate silicon, and the main cross section and lateral section of the silicon nitride waveguides are rectangle, the SOI ripples
It is that taper, lateral section are stairstepping to lead close to the main cross section of one end of the silicon nitride waveguides, away from institute in the SOI waveguides
The main cross section and lateral section for stating one end of silicon nitride waveguides are rectangle, and the diameter of the silicon nitride waveguides is more than the SOI ripples
The diameter led.
In one embodiment, one end away from the SOI waveguides is also thickened including silicon nitride in the silicon nitride waveguides
Layer, the main cross section and lateral section of the silicon nitride thickening layer are rectangle.
In one embodiment, the Wavelength division multiplexing module is grating coupler or the asymmetric multiple-mode interfence of one-to-two
Channel-splitting filter.
In one embodiment, the asymmetric multiple-mode interfence channel-splitting filter is the asymmetric horse made based on nitride process
Conspicuous increasing Dare interferometer.
In one embodiment, in addition to optically isolated module, the optically isolated module be connected to the light emission module and
Between the uplink optical signal transmitting terminal of the Wavelength division multiplexing module, the optically isolated module prevents what the optical line terminal was sent
Downlink optical signal enters the light emission module.
In one embodiment, the Optical Receivers includes photoelectric conversion unit, amplifying unit and voltage regulation unit；
The photoelectric conversion unit is connected to the downlink optical signal receiving terminal and the amplification list of the Wavelength division multiplexing module
Between member, the voltage regulation unit is connected with the photoelectric conversion unit；
The voltage regulation unit exports constant operating voltage signal, the photoelectric conversion unit to the photoelectric conversion unit
The downlink optical signal is converted to by electric signal according to the operating voltage signal, the amplifying unit is carried out to the electric signal
Exported after amplification.
In one embodiment, the amplifying unit includes trans-impedance amplifier and limiting amplifier, the trans-impedance amplifier
It is connected with the photoelectric conversion unit, the limiting amplifier is connected with the trans-impedance amplifier.
In one embodiment, the light emission module includes laser drive unit and laser emission element；
The uplink optical signal transmitting terminal and the laser that the laser emission element is connected to the Wavelength division multiplexing module drive
Between moving cell, the laser drive unit by silicon photon technology or 3D interpolaters Integration ofTechnology on the silicon chip,
The laser emitting module is welded on the silicon chip；
The laser drive unit sends drive signal according to modulated signal, and the laser emission element is according to the driving
Signal sends the uplink optical signal.
In one embodiment, the laser emitting module includes Electro-optical Modulation driver element, laser emission element and electricity
Light-modulating cell；
The Electro-optical Modulation driver element and the laser emission element are connected with the Electro-optical Modulation unit, the electricity
Light-modulating cell is connected with the uplink optical signal transmitting terminal of the Wavelength division multiplexing module, and the Electro-optical Modulation driver element passes through silicon
Photon technology or 3D- interpolaters Integration ofTechnology are on the silicon chip, and the Electro-optical Modulation unit passes through silicon photon technology collection
Into on the silicon chip, the laser emitting module is welded on the silicon chip；
The laser emission element launches laser signal, and the Electro-optical Modulation driver element sends driving according to modulated signal
Signal, the Electro-optical Modulation unit is modulated according to the drive signal to the laser signal, obtains the up light letter
Number.
The embodiment of the present invention is by the Wavelength division multiplexing module that is made based on nitride process, to realize that the wavelength-division of optical signal is answered
With and demultiplexing, by using mode-expansion structure, realize the efficient coupling between Wavelength division multiplexing module and Optical Receivers, ripple
Size uniform is led, loss of signal can be effectively reduced, reduce false reflection and insensitive to environment temperature.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, makes required in being described below to embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are some embodiments of the present invention, for ability
For the those of ordinary skill of domain, on the premise of not paying creative work, it can also be obtained according to these accompanying drawings other attached
Figure.
Fig. 1 is the structural representation for the single-mode fiber bidirectional optical transceiver that one embodiment of the present of invention is provided；
Fig. 2 is the representative side section view for the mode-expansion structure that one embodiment of the present of invention is provided；
Fig. 3 is the main cross section schematic diagram for the mode-expansion structure that one embodiment of the present of invention is provided；
Fig. 4 is the structural representation for the single-mode fiber bidirectional optical transceiver that an alternative embodiment of the invention is provided；
Fig. 5 is the structural representation for the single-mode fiber bidirectional optical transceiver that yet another embodiment of the present invention is provided.
Embodiment
In order that those skilled in the art more fully understand the present invention program, below in conjunction with the embodiment of the present invention
Accompanying drawing, the technical scheme in the embodiment of the present invention is explicitly described, it is clear that described embodiment is the present invention one
The embodiment divided, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art are not doing
Go out the every other embodiment obtained under the premise of creative work, should all belong to the scope of protection of the invention.
Term " comprising " and their any deformations in description and claims of this specification and above-mentioned accompanying drawing, meaning
Figure is to cover non-exclusive include.Process, method or system, product or equipment for example comprising series of steps or unit do not have
The step of being defined in the step of having listed or unit, but alternatively also include not listing or unit, or alternatively also wrap
Include for the intrinsic other steps of these processes, method, product or equipment or unit.
In order to solve the problems of existing BOSA components based on silicon photon technology, the embodiment of the present invention provides one
Single-mode fiber bidirectional optical transceiver is planted, it is mainly used in PON (Passive Optical Network, passive optical-fiber network)
In.Main OLT (Optical Line Terminal, optical line terminal), the ODN by optical-fiber network console for centralized control of PON
ONU (the ONT Optical Network of (Optical Distribution Network, optical distribution network) and user terminal
Unit, optical network unit) composition.Even if the single-mode fiber bidirectional optical transceiver that the embodiment of the present invention is provided is as user terminal
ONU is used.
As shown in figure 1, one embodiment of the present of invention provides a kind of single-mode fiber bidirectional optical transceiver 100, it includes light
Transmitter module 10, Optical Receivers 20, mode-expansion structure 30 and the Wavelength division multiplexing module made based on silicon nitride (SiN) technique
40。
In a particular application, light emission module can be realized by the direct modulation or indirect modulation principle of optical signal.
For example, light emission module can be realized by laser driver and laser constitution, that is, swashed by the direct modulation principle of optical signal
CD-ROM driver output modulated signal is directly acted on laser, realizes the modulation for the laser signal launched laser；Light is sent out
The indirect modulation principle of optical signal can also be passed through by Electro-optical Modulation driver, electrooptic modulator and laser constitution by penetrating module
Realize, i.e., after laser output laser signal, then by Electro-optical Modulation driver driving electrooptic modulator output modulated signal to swashing
Optical signal is modulated.
In a particular application, the optics in light emission module and Optical Receivers is integrated using silicon photon technology,
Electricity device uses 3D interpolater Integration ofTechnologies.
In a particular application, Wavelength division multiplexing module can be the grating coupler or one point made based on nitride process
Two asymmetric multiple-mode interfence channel-splitting filter.
In a particular application, asymmetric multiple-mode interfence channel-splitting filter is specifically as follows the asymmetric mach based on nitride process
Increase Dare interferometer (Mach-Zehnder interferometer).
Annexation in the single-mode fiber bidirectional optical transceiver 100 that the present embodiment is provided between each part is：
Light emission module 10 is connected with the uplink optical signal transmitting terminal of Wavelength division multiplexing module 40, under Wavelength division multiplexing module 40
Traveling optical signal receiving terminal and Optical Receivers 20 are of coupled connections by mode-expansion structure 30, and the optical fiber of Wavelength division multiplexing module 40 connects
Connect end and optical line terminal 202, Optical Receivers 20, Wavelength division multiplexing module 40 and mode-expansion knot are connected by single-mode fiber 201
Structure 30 is integrated on same silicon chip by silicon photon technology, light emission module 10 be combined it is integrated on a silicon substrate.
In a particular application, it is combined integrated specifically refer to while including the Composite Set of optoelectronic integrated technology and silicon photon technology
Into technology.
In a particular application, optical line terminal specifically refers to be arranged on sending with optical signal for optical-fiber network console for centralized control
Or receive capabilities optical communication terminal equipment.
The operation principle for the single-mode fiber bidirectional optical transceiver 100 that the present embodiment is provided is：
Light emission module 10 sends uplink optical signal to Wavelength division multiplexing module 40, Wavelength division multiplexing module 40 according to modulated signal
Uplink optical signal is sent to optical line terminal 202 by single-mode fiber 201；
Wavelength division multiplexing module 40 receives the downlink optical signal that optical line terminal 202 is sent, light-receiving by single-mode fiber 201
Module 20 receives downlink optical signal and exported after handling downlink optical signal.
In a particular application, uplink optical signal is different with the transmission wavelength of downlink optical signal.
In one embodiment, the wavelength of uplink optical signal is 1270 nanometers, and the wavelength of downlink optical signal is 1577 nanometers,
The single-mode fiber bidirectional optical transceiver that the present embodiment is provided effectively realizes the light letter of 1.3 microns and 1.5 micron wave lengths
Number multiplexing and demultiplexing.
The present embodiment by the Wavelength division multiplexing module that is made based on nitride process, come realize optical signal wavelength-division multiplex and
Demultiplexing, by using mode-expansion structure, realizes the efficient coupling between Wavelength division multiplexing module and Optical Receivers, waveguide chi
It is very little uniform, it can effectively reduce loss of signal, reduce false reflection and insensitive to environment temperature.
As shown in Figures 2 and 3, what one embodiment of the present of invention was exemplary shows the concrete structure of mode-expansion structure 30
Schematic diagram.
In a particular application, mode-expansion structure is specifically as follows spot-size converter (SSC, spot size
Converter), the spot-size converter, which can be used, can arbitrarily realize silicon nitride waveguides and SOI (Silicon-On-
Silicon on Insulator, i.e. dielectric substrate) efficient coupling between waveguide, reduces the structure of loss of signal, for example, wedge-shaped coupling
Close structure or trapezoidal coupled structure.
As shown in Figures 2 and 3, in the present embodiment, mode-expansion structure 30 includes the nitridation made based on nitride process
Silicon waveguide 31, SOI waveguides 32, cushion 33 and layer-of-substrate silicon 34.
In a particular application, layer-of-substrate silicon is the silicon chip made by silicon materials, and cushion is by earth silicon material system
The insulating barrier of work.
The representative side section view for showing mode-expansion structure 30 exemplary Fig. 2.As shown in Fig. 2 in the present embodiment, nitrogen
SiClx waveguide 31 and SOI waveguides 32 intercouple connection in the upper surface of cushion 33, and cushion 33 is arranged on layer-of-substrate silicon 34
Upper surface, the lateral sections of silicon nitride waveguides 31 is rectangle, and the lateral section of SOI waveguides 32 is remote in stairstepping, SOI waveguides 32
The lateral section of one end of silicon nitride waveguides is rectangle, and the diameter of silicon nitride waveguides 31 is more than the diameter of SOI waveguides 32.
The main cross section schematic diagram for showing mode-expansion structure 30 exemplary Fig. 3.As shown in figure 3, in the present embodiment, nitrogen
The main cross section of SiClx waveguide 31 is that the main cross section of one end of close silicon nitride waveguides 31 in rectangle, SOI waveguides 32 is taper, SOI
The main cross section of one end away from silicon nitride waveguides 31 is rectangle in waveguide 32.
In one embodiment, one end away from SOI waveguides in silicon nitride waveguides includes silicon nitride thickening layer.By setting
Silicon nitride thickening layer can improve the coupling efficiency between silicon nitride waveguides and SOI waveguides, further reduce transmission loss.
As shown in Figures 2 and 3, in the present embodiment, one end away from SOI waveguides 32 in silicon nitride waveguides 31 includes silicon nitride
Thickening layer 311, the main cross section and lateral section of silicon nitride thickening layer 311 are rectangle.
In one embodiment, the diameter of the minimum cross-section in SOI waveguides close to silicon nitride waveguides one end is micro- less than 80
Rice.As shown in figure 3, the diameter of the minimum cross-section is expressed as W1.
In a particular application, silicon nitride waveguides or the shape of cross section of SOI waveguides can have any shape, for example, rectangle,
Circle, ellipse, regular polygon etc., are not particularly limited in the present embodiment to the shape of cross section of the two.
The present embodiment a kind of is made up of silicon nitride waveguides and SOI waveguides by providing step type conical coupled modes
Mode-expansion structure, can improve the coupling efficiency between Wavelength division multiplexing module and Optical Receivers, reduce false reflection, reduction letter
Number loss.
As shown in figure 4, in one embodiment of the invention, light emission module 10 includes laser drive unit 11 and laser
Transmitter unit 12, Optical Receivers 20 includes photoelectric conversion unit 21, amplifying unit 22 and voltage regulation unit 23, Wavelength division multiplexing module
40 for based on nitride process asymmetric mach increase Dare interferometer, single-mode fiber bidirectional optical transceiver 100 also include light every
From module 50.
In a particular application, laser drive unit be specifically as follows using silicon photon technology or with silicon semiconductor CMOS technology
The laser driver that compatible compatible technology is made, by exporting particular size or constant current signal drives laser,
Integration ofTechnology is on a silicon substrate by silicon photon technology or 3D interpolaters (3D Interposer) for laser drive unit.
In a particular application, laser emission element is specifically as follows laser, for example, semiconductor laser, ruby swash
Light device, He-Ne laser etc..
In one embodiment, silicon substrate laser of the laser emitting module for welding on a silicon substrate.The silicon substrate laser
It is specifically as follows distributed feedback laser (DFB, Distributed Feedback Laser).
In a particular application, photoelectric conversion unit is specially the photodiode being made of silicon photon technology, for example, snow
Collapse the PIN photodiode of formula photodiode (APD, avalanche photodiode) or forward bias.Use avalanche type
Photodiode can compensate the link load caused by fiber distance and multiple branches.
In a particular application, voltage regulation unit is specially low pressure difference linear voltage regulator (LDO, low dropout
regulator)。
In a particular application, optically isolated module is specifically as follows the optoisolator being made of silicon photon technology.
Annexation in the present embodiment between each part is：
Laser emission element 12 is connected to the uplink optical signal transmitting terminal and laser drive unit 11 of Wavelength division multiplexing module 40
Between；
Photoelectric conversion unit 21 is connected between the downlink optical signal receiving terminal of Wavelength division multiplexing module 40 and amplifying unit 22,
Voltage regulation unit 23 is connected with photoelectric conversion unit 21；
Optically isolated module 50 is connected between light emission module 10 and the uplink optical signal transmitting terminal of Wavelength division multiplexing module 40.
The operation principle of each part is in the present embodiment：
Laser drive unit 11 sends drive signal according to modulated signal, and laser emission element 12 is sent according to drive signal
Uplink optical signal；
Voltage regulation unit 23 exports constant operating voltage signal to photoelectric conversion unit 21, and photoelectric conversion unit 21 is according to work
Make voltage signal and downlink optical signal is converted into electric signal, amplifying unit 22 is exported after being amplified to electric signal；
The downlink optical signal that optically isolated module 50 prevents optical line terminal 202 from sending enters light emission module 10.
In a particular application, drive signal is current signal.
As shown in figure 5, in one embodiment of the invention, the light emission module 10 in Fig. 4 can be using equivalence replacement as bag
The structure of Electro-optical Modulation driver element 14, laser emission element 12 and Electro-optical Modulation unit 13 is included, amplifying unit 22 is included across resistance
Amplifier (TIA, trans-impedance amplifier) 221 and limiting amplifier (LA, Limiting Amplifier)
222；Wherein, Electro-optical Modulation driver element 14 and laser emission element 12 are connected with Electro-optical Modulation unit 13, Electro-optical Modulation list
Member 13 is connected with the uplink optical signal transmitting terminal of Wavelength division multiplexing module 40, and trans-impedance amplifier 221 is connected with photoelectric conversion unit 21,
Limiting amplifier 222 is connected with trans-impedance amplifier 221；Laser emission element 12 launches laser signal, Electro-optical Modulation driver element
14 send drive signal according to modulated signal, and Electro-optical Modulation unit 13 is modulated to laser signal according to drive signal, obtained
Uplink optical signal.
In a particular application, trans-impedance amplifier and limiting amplifier using silicon photon technology or with silicon semiconductor CMOS technology
Compatible compatible technology is made.
In a particular application, Electro-optical Modulation unit is specifically as follows the electrooptic modulator being made of silicon photon technology, example
Such as, Mach increases Dare modulator (Mach-Zehnder Modulator) or electroabsorption modulator (EAM, Electro
Absorption Modulator), Electro-optical Modulation unit is integrated on a silicon substrate by silicon photon technology.
In a particular application, Electro-optical Modulation driver element is specifically as follows Electro-optical Modulation driver, for sending driving letter
Number, driving Electro-optical Modulation unit output modulated signal, Electro-optical Modulation driver element passes through silicon photon technology or 3D- interpolater skills
Art is integrated on a silicon substrate.
The single-mode fiber bidirectional optical transceiver that the present embodiment is provided, passes through the wavelength-division multiplex mould made based on nitride process
Block, to realize the wavelength-division multiplex and demultiplexing of optical signal, by using mode-expansion structure, realizes that Wavelength division multiplexing module and light connect
Receive the efficient coupling between module, waveguide dimensions are uniform, can effectively reduce loss of signal, reduce false reflection and to environment temperature not
It is sensitive；Pass through the mode-expansion structure being made up of silicon nitride waveguides and SOI waveguides step type conical coupled modes, Ke Yiti
Coupling efficiency between high Wavelength division multiplexing module and Optical Receivers, reduces false reflection, reduces loss of signal.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
Any modifications, equivalent substitutions and improvements made within refreshing and principle etc., should be included in the scope of the protection.
Claims (10)
1. a kind of single-mode fiber bidirectional optical transceiver, it is characterised in that including light emission module, Optical Receivers, mode-expansion
Structure and the Wavelength division multiplexing module made based on nitride process；
The light emission module is connected with the uplink optical signal transmitting terminal of the Wavelength division multiplexing module, the Wavelength division multiplexing module
Downlink optical signal receiving terminal and Optical Receivers are connected by the mode-expansion structure Coupling, the light of the Wavelength division multiplexing module
Fine connection end connects optical line terminal, the Optical Receivers, the Wavelength division multiplexing module and the mould spot by single-mode fiber
Mapped structure is integrated on same silicon chip by silicon photon technology, and the light emission module is compound to be integrated in the silicon chip
On；
The light emission module sends uplink optical signal to the Wavelength division multiplexing module, the wavelength-division multiplex mould according to modulated signal
Block is sent the uplink optical signal to the optical line terminal by the single-mode fiber；
The Wavelength division multiplexing module receives the downlink optical signal that the optical line terminal is sent, the light by the single-mode fiber
Receiving module receives the downlink optical signal and exported after handling the downlink optical signal.
2. single-mode fiber bidirectional optical transceiver as claimed in claim 1, it is characterised in that the mode-expansion structure includes nitrogen
SiClx waveguide, SOI waveguides, cushion and layer-of-substrate silicon；
The silicon nitride waveguides and the SOI waveguides are intercoupled connection in the upper surface of the cushion, and the cushion is set
Put in the upper surface of the layer-of-substrate silicon, the main cross section and lateral section of the silicon nitride waveguides are rectangle, in the SOI waveguides
It is that taper, lateral section are stairstepping close to the main cross section of one end of the silicon nitride waveguides, away from the nitrogen in the SOI waveguides
The main cross section and lateral section of one end of SiClx waveguide are rectangle, and the diameter of the silicon nitride waveguides is more than the SOI waveguides
Diameter.
3. single-mode fiber bidirectional optical transceiver as claimed in claim 2, it is characterised in that away from institute in the silicon nitride waveguides
Stating one end of SOI waveguides also includes silicon nitride thickening layer, and the main cross section and lateral section of the silicon nitride thickening layer are rectangle.
4. single-mode fiber bidirectional optical transceiver as claimed in claim 1, it is characterised in that the Wavelength division multiplexing module is grating
The asymmetric multiple-mode interfence channel-splitting filter of coupler or one-to-two.
5. single-mode fiber bidirectional optical transceiver as claimed in claim 4, it is characterised in that the asymmetric multiple-mode interfence partial wave
Device is the asymmetric mach-increasing Dare interferometer made based on nitride process.
6. single-mode fiber bidirectional optical transceiver as claimed in claim 1, it is characterised in that described also including optically isolated module
Optically isolated module is connected between the light emission module and the uplink optical signal transmitting terminal of the Wavelength division multiplexing module, the light
The downlink optical signal that isolation module prevents the optical line terminal from sending enters the light emission module.
7. single-mode fiber bidirectional optical transceiver as claimed in claim 1, it is characterised in that the Optical Receivers includes photoelectricity
Converting unit, amplifying unit and voltage regulation unit；
The photoelectric conversion unit be connected to the Wavelength division multiplexing module downlink optical signal receiving terminal and the amplifying unit it
Between, the voltage regulation unit is connected with the photoelectric conversion unit；
The voltage regulation unit exports constant operating voltage signal to the photoelectric conversion unit, the photoelectric conversion unit according to
The downlink optical signal is converted to electric signal by the operating voltage signal, and the amplifying unit is amplified to the electric signal
After export.
8. single-mode fiber bidirectional optical transceiver as claimed in claim 7, it is characterised in that the amplifying unit includes putting across resistance
Big device and limiting amplifier, the trans-impedance amplifier are connected with the photoelectric conversion unit, the limiting amplifier and it is described across
Impedance amplifier is connected.
9. single-mode fiber bidirectional optical transceiver as claimed in claim 1, it is characterised in that the light emission module includes laser
Driver element and laser emission element；
The laser emission element is connected to the uplink optical signal transmitting terminal and the Laser Driven list of the Wavelength division multiplexing module
Between member, the laser drive unit by silicon photon technology or 3D interpolaters Integration ofTechnology on the silicon chip, it is described
Laser emitting module is welded on the silicon chip；
The laser drive unit sends drive signal according to modulated signal, and the laser emission element is according to the drive signal
Send the uplink optical signal.
10. single-mode fiber bidirectional optical transceiver as claimed in claim 1, it is characterised in that the laser emitting module includes
Electro-optical Modulation driver element, laser emission element and Electro-optical Modulation unit；
The Electro-optical Modulation driver element and the laser emission element are connected with the Electro-optical Modulation unit, and the electric light is adjusted
Unit processed is connected with the uplink optical signal transmitting terminal of the Wavelength division multiplexing module, and the Electro-optical Modulation driver element passes through silicon photon
Technology or 3D- interpolaters Integration ofTechnology are on the silicon chip, and the Electro-optical Modulation unit is integrated in by silicon photon technology
On the silicon chip, the laser emitting module is welded on the silicon chip；
The laser emission element launches laser signal, and the Electro-optical Modulation driver element sends driving letter according to modulated signal
Number, the Electro-optical Modulation unit is modulated according to the drive signal to the laser signal, obtains the uplink optical signal.
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