CN204119239U - A kind of integreted phontonics optical module - Google Patents
A kind of integreted phontonics optical module Download PDFInfo
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- CN204119239U CN204119239U CN201420490964.4U CN201420490964U CN204119239U CN 204119239 U CN204119239 U CN 204119239U CN 201420490964 U CN201420490964 U CN 201420490964U CN 204119239 U CN204119239 U CN 204119239U
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- optical module
- integreted phontonics
- band
- laser signal
- division multiplexer
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Abstract
The utility model provides a kind of integreted phontonics optical module, comprises and is integrated in reflective semiconductor amplifier on same InP substrate and wavelength division multiplexer; Wherein, wavelength division multiplexer is arranged between the input/output port of reflective semiconductor amplifier and this integreted phontonics optical module; One end of reflective semiconductor optical amplifier is set to speculum, and its output wavelength scope is the first laser signal of C-band or L-band; First laser signal, via after wavelength division multiplexer, is coupled to the input/output port of this integreted phontonics optical module; And the input/output port input wavelength scope of this integreted phontonics optical module is that the second laser signal of C-band or L-band is to this integreted phontonics optical module; Solve the wavelength self adaptation of the optical network unit ONU of WDM-PON physical layer, upstream bandwidth comparatively minor issue, and be easy to encapsulation and do not need sealing encapsulate, applicable large-scale production.
Description
Technical field
The utility model relates to the optical module in fiber optic communication field, particularly a kind of integreted phontonics optical module.
Background technology
Optical access network take optical fiber as the broadband access network of prevailing transmission medium.Along with the development of 4G network, need to research and develop that bandwidth is larger, resource utilization is higher, coverage is wider, class of business is more, access way more flexibly, compatible more and the higher optical access network of future generation of efficiency.Wave division multiplexing passive optical network (WDM-PON) technology have band roomy, be convenient to upgrade, advantage to agreement and transparent rate, be therefore widely used in existing optical access network.
As shown in Figure 1, wavelength-division multiplex technique (WDM) is used in EPON (PON) by WDM-PON, signal, by identifying that optical network unit ONU (Optical Network Unit) sends various wavelength, is assigned to each road ONU by optical branching device AWG.And adopt wavelength as the mark of user side ONU based on the WDM-PON of wavelength-division multiplex technique, utilize wavelength-division multiplex technique to realize multi-upstream access, wider bandwidth of operation can be provided, symmetrical broadband access truly can be realized.In WDM-PON, wavelength division multiplexer WDM demultiplexing downstream signal, and distribute to the OUN specified, upward signal is multiplexed into an optical fiber simultaneously, is transferred to optical line terminal OLT (Optical Line Terminal).
But, above-mentioned existing WDM-PON technology, the ONU of its physical layer exist wavelength self adaptation, upstream bandwidth less problem, and WDM-PON and light to carry the difficulty of radio frequency RoF (Radio-over-fiber) technological incorporation larger.
Summary of the invention
The purpose of this utility model is to overcome above-mentioned the deficiencies in the prior art, and the utility model provides a kind of integreted phontonics optical module.
The utility model provides a kind of device being applied to optical fiber transceiving in OLT or ONU, provides a kind of using indium phosphide (InP) crystal as the integreted phontonics optical module of integrated substrate especially.
The technical scheme that the utility model provides is as follows: a kind of integreted phontonics optical module, comprises and is integrated in reflective semiconductor amplifier on same InP substrate and wavelength division multiplexer; Wherein, wavelength division multiplexer is arranged between the input/output port of reflective semiconductor amplifier and this integreted phontonics optical module; One end of reflective semiconductor optical amplifier is set to speculum, and its output wavelength scope is the first laser signal of C-band or L-band; First laser signal, via after wavelength division multiplexer, is coupled to the input/output port of this integreted phontonics optical module; And the input/output port input wavelength scope of this integreted phontonics optical module is that the second laser signal of C-band or L-band is to this integreted phontonics optical module.
Wherein, preferred implementation is: the second laser signal, via after wavelength division multiplexer, is coupled to the second output port of this integreted phontonics optical module.
Wherein, preferred implementation is: this integreted phontonics optical module comprises the photelectric receiver be integrated on same InP substrate further, and one end of itself and wavelength division multiplexer links, and the second laser signal, via after wavelength division multiplexer, exports photelectric receiver to.
Wherein, preferred implementation is: photelectric receiver is set to photodiode or avalanche photodide.
Wherein, preferred implementation is: this integreted phontonics optical module further comprises the impedance matching amplifier be integrated on same InP substrate, and the other end of itself and photelectric receiver links.
Wherein, preferred implementation is: reflective semiconductor optical amplifier produces the first laser signal that wave-length coverage is C-band, and now photelectric receiver receiver wavelength range is the second laser signal of L-band; Reflective semiconductor optical amplifier produces the first laser signal that wave-length coverage is L-band, and now photelectric receiver receiver wavelength range is the second laser signal of C-band.
Optical element of the present utility model has the following advantages and good effect compared to prior art: optics integrated optical module of the present utility model is integrated optical module on same InP substrate, solves the wavelength self adaptation of the optical network unit ONU of WDM-PON physical layer, upstream bandwidth comparatively minor issue; Secondly, optics integration module of the present utility model is easy to encapsulation and does not need sealing to encapsulate; Finally, integrated level is high, volume is little, cost is low, be applicable to large-scale production.
Accompanying drawing explanation
Fig. 1 is the structural representation of the WDM-PON of prior art.
Fig. 2 is the integreted phontonics optical module schematic diagram of the optical element of the utility model first embodiment.
Fig. 3 is the integreted phontonics optical module schematic diagram of the optical element of the utility model second embodiment.
Fig. 4 is the integreted phontonics optical module schematic diagram of the optical element of the utility model the 3rd embodiment.
Embodiment
For making there is further understanding to the purpose of this utility model, structural feature and function thereof, accompanying drawing is coordinated to be described in detail as follows.Should be appreciated that the specific embodiment described by this part only in order to explain the utility model, and can be not used in restriction the utility model.
Integreted phontonics of the present utility model (Photonics Integrated Circuit is called for short PIC) optical module is applied in the optical fiber transceiving device of OLT or ONU, and its IC substrate uses indium phosphide (InP) crystal.
Specific embodiment one
Please refer to Fig. 2, Fig. 2 is the integreted phontonics optical module schematic diagram of the optical element of the utility model first embodiment.Integreted phontonics optical module of the present utility model comprises reflective semiconductor optical amplifier (Reflection Semiconductor Optical Amplifier, ROSA is called for short in figure) 10 and wavelength division multiplexer (Wavelength Division Multiplexer, is called for short WDM in figure) 20.Wherein one end of reflective semiconductor optical amplifier 10 is speculum, and the first laser signal producing C-band or L-band exports wavelength division multiplexer 20 to.Wavelength division multiplexer 20 is arranged between the input/output port (I/O) 30 of reflective semiconductor optical amplifier 10 and integreted phontonics optical module, and links the second output port 40 of this integreted phontonics optical module simultaneously.After the laser signal that reflective semiconductor optical amplifier 10 exports carries out wavelength multiplexing and demultiplexing via wavelength division multiplexer 20, be coupled to input/output port 30.
Simultaneously, the input/output port 30 input wavelength scope of this integreted phontonics optical module is that the second laser signal of C-band or L-band is to this integreted phontonics optical module, after wavelength division multiplexer 20, be coupled to the second output port 40 of this integreted phontonics optical module.
Specific embodiment two
Please refer to Fig. 3, Fig. 3 is the integreted phontonics optical module schematic diagram of the optical element of the utility model second embodiment.Integreted phontonics optical module of the present utility model comprises reflective semiconductor optical amplifier 10, wavelength division multiplexer 20 and photelectric receiver 50.Wherein one end of reflective semiconductor optical amplifier 10 is speculum, and the first laser signal producing C-band or L-band exports wavelength division multiplexer 20 to.Wavelength division multiplexer 20 is arranged between the input/output port (I/O) 30 of reflective semiconductor optical amplifier 10 and integreted phontonics optical module, and links photelectric receiver 50 simultaneously.The first laser signal exported by reflective semiconductor optical amplifier 10 is coupled to input/output port 30 and exports after carrying out wavelength multiplexing and demultiplexing via wavelength division multiplexer 20.
Meanwhile, the input/output port 30 input wavelength scope of this integreted phontonics optical module be the second laser signal of C-band or L-band to this integreted phontonics optical module, after wavelength division multiplexer 20, export photelectric receiver 50 to.And reflective semiconductor optical amplifier 10 produces the first laser signal that wave-length coverage is C-band, now photelectric receiver 50 receiver wavelength range is the second laser signal of L-band; Reflective semiconductor optical amplifier 10 produces the first laser signal that wave-length coverage is L-band, and now photelectric receiver 50 receiver wavelength range is the second laser signal of C-band.
Wherein photelectric receiver 50 is set to photodiode (Photo Diode is called for short PD), also can be set to avalanche photodide (Avalanche Photodiode is called for short APD).
Specific embodiment three
Please refer to Fig. 4, Fig. 4 is the integreted phontonics optical module schematic diagram of the optical element of the utility model the 3rd embodiment.Integreted phontonics optical module of the present utility model comprises reflective semiconductor optical amplifier 10, wavelength division multiplexer 20, photelectric receiver 50 and impedance matching amplifier (being called for short TIA in figure) 60.Wherein one end of reflective semiconductor optical amplifier 10 is speculum, and the first laser signal producing C-band or L-band exports wavelength division multiplexer 20 to.Wavelength division multiplexer 20 is arranged between the input/output port (I/O) 30 of reflective semiconductor optical amplifier 10 and integreted phontonics optical module, and links photelectric receiver 50 simultaneously.Impedance matching amplifier 60 is arranged on the other end of photelectric receiver 50.The first laser signal exported by reflective semiconductor optical amplifier 10 is coupled to input/output port 30 after carrying out wavelength multiplexing and demultiplexing via wavelength division multiplexer 20.
Meanwhile, the input/output port 30 input wavelength scope of this integreted phontonics optical module be the second laser signal of C-band or L-band to this integreted phontonics optical module, after wavelength division multiplexer 20, export photelectric receiver 50 to.And reflective semiconductor optical amplifier 10 produces the first laser signal that wave-length coverage is C-band, now photelectric receiver 50 receiver wavelength range is the second laser signal of L-band; Reflective semiconductor optical amplifier 10 produces the first laser signal that wave-length coverage is L-band, and now photelectric receiver 50 receiver wavelength range is the second laser signal of C-band.
Wherein export the second laser signal of photelectric receiver 50 to, after being converted to the signal of telecommunication via photelectric receiver 50, export impedance matching amplifier 60 to.
Wherein, photelectric receiver 50 is set to photodiode (Photo Diode is called for short PD), also can be set to avalanche photodide (Avalanche Photodiode is called for short APD).
Integreted phontonics optical module of the present utility model includes source region and inactive regions.Wherein, the wavelength division multiplexer 20 of laser signal that inactive regions comprises the low-loss waveguide (being called for short SSC) that mates with input-output optical fiber mould field and exports for separating of reflective semiconductor optical amplifier 10, lays respectively at ground floor and the second layer of integrated substrate indium phosphide; Active region comprises reflective semiconductor optical amplifier 10, or comprise reflective semiconductor optical amplifier 10 and photelectric receiver 50, again or comprise reflective semiconductor optical amplifier 10, photelectric receiver 50 and impedance matching amplifier 60, the top area of integrated substrate indium phosphide is positioned at.
Optical element of the present utility model has the following advantages and good effect compared to prior art: optics integrated optical module of the present utility model is integrated optical module on same InP substrate, solves the wavelength self adaptation of the optical network unit ONU of WDM-PON physical layer, upstream bandwidth comparatively minor issue; Secondly, optics integration module of the present utility model is easy to encapsulation and does not need sealing to encapsulate; Finally, integrated level is high, volume is little, cost is low, be applicable to large-scale production.
The above, be only the utility model most preferred embodiment, and not for limiting scope of the present utility model, all equivalences done according to the utility model claim change or modify, and are all the utility model and contain.
Claims (8)
1. an integreted phontonics optical module, comprises and is integrated in reflective semiconductor amplifier on same InP substrate and wavelength division multiplexer; Wherein, wavelength division multiplexer is arranged between the input/output port of reflective semiconductor amplifier and this integreted phontonics optical module; It is characterized in that: one end of reflective semiconductor optical amplifier is set to speculum, its output wavelength scope is the first laser signal of C-band or L-band; First laser signal, via after wavelength division multiplexer, is coupled to the input/output port of this integreted phontonics optical module; And the input/output port input wavelength scope of this integreted phontonics optical module is that the second laser signal of C-band or L-band is to this integreted phontonics optical module.
2. a kind of integreted phontonics optical module as claimed in claim 1, is characterized in that: the second laser signal, via after wavelength division multiplexer, is coupled to the second output port of this integreted phontonics optical module.
3. a kind of integreted phontonics optical module as claimed in claim 1, is characterized in that: this integreted phontonics optical module comprises the photelectric receiver be integrated on same InP substrate further, and one end of itself and wavelength division multiplexer links.
4. a kind of integreted phontonics optical module as claimed in claim 3, is characterized in that: the second laser signal, via after wavelength division multiplexer, exports photelectric receiver to.
5., as a kind of integreted phontonics optical module that claim 3 is stated, it is characterized in that: photelectric receiver is set to photodiode or avalanche photodide.
6. a kind of integreted phontonics optical module as claimed in claim 3, is characterized in that: this integreted phontonics optical module further comprises the impedance matching amplifier be integrated on same InP substrate, and the other end of itself and photelectric receiver links.
7. a kind of integreted phontonics optical module as described in claim 3 or 6, is characterized in that: reflective semiconductor optical amplifier produces the first laser signal that wave-length coverage is C-band, and now photelectric receiver receiver wavelength range is the second laser signal of L-band.
8. a kind of integreted phontonics optical module as described in claim 3 or 6, is characterized in that: reflective semiconductor optical amplifier produces the first laser signal that wave-length coverage is L-band, and now photelectric receiver receiver wavelength range is the second laser signal of C-band.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420490964.4U CN204119239U (en) | 2014-08-28 | 2014-08-28 | A kind of integreted phontonics optical module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420490964.4U CN204119239U (en) | 2014-08-28 | 2014-08-28 | A kind of integreted phontonics optical module |
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| CN204119239U true CN204119239U (en) | 2015-01-21 |
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| CN201420490964.4U Expired - Fee Related CN204119239U (en) | 2014-08-28 | 2014-08-28 | A kind of integreted phontonics optical module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104202091A (en) * | 2014-08-28 | 2014-12-10 | 昂纳信息技术（深圳）有限公司 | Photon integrated optical module |
-
2014
- 2014-08-28 CN CN201420490964.4U patent/CN204119239U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104202091A (en) * | 2014-08-28 | 2014-12-10 | 昂纳信息技术（深圳）有限公司 | Photon integrated optical module |
| CN104202091B (en) * | 2014-08-28 | 2019-03-08 | 昂纳信息技术（深圳）有限公司 | A kind of integreted phontonics optical module |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150121 Termination date: 20150828 |
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| EXPY | Termination of patent right or utility model |