CN211670213U - LED display structure for realizing full-color conversion - Google Patents
LED display structure for realizing full-color conversion Download PDFInfo
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- CN211670213U CN211670213U CN202021668686.9U CN202021668686U CN211670213U CN 211670213 U CN211670213 U CN 211670213U CN 202021668686 U CN202021668686 U CN 202021668686U CN 211670213 U CN211670213 U CN 211670213U
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Abstract
The utility model discloses a realize full-color conversion's LED and show structure, this LED show structure include base plate, three LED NULL, insulating layer, sealing layer, ruddiness quantum dot layer, green glow quantum dot layer and stratum lucidum, and on three LED NULL was fixed in the base plate, the insulating layer covered on three LED NULL, ruddiness quantum dot layer, green glow quantum dot layer and stratum lucidum, locate on the insulating layer and with three LED NULL one-to-one setting. The utility model discloses realize full-color conversion's LED and show the structure and through setting up the insulating layer, completely cut off quantum dot layer and LED integrated chip, avoided LED integrated chip to send out the luminous overheated inefficacy that leads to the quantum dot material, greatly promoted the life of quantum dot material and whole product to the mixed light problem that application quantum dot technique leads to has been solved.
Description
Technical Field
The utility model relates to a semiconductor light emitting device technical field, in particular to realize full-color conversion's LED and show structure.
Background
Quantum dots (QDs for short) have the characteristics of adjustable light-emitting spectrum, narrow half-peak width, high light-emitting efficiency and the like, and can emit high-quality monochromatic light with the narrow half-peak width according to the size of the Quantum dots under the condition of being subjected to photoelectric excitation.
With the continuous development of LED technology, the performance size of the LED is continuously reduced, the color development modes are more and more, and the color conversion mode of blue light or ultraviolet chips and quantum dots is adopted by more and more LEDs to reduce the bad problems caused by the complex die bonding of three color chips so as to reduce the production cost. The LED chip of the existing product is in direct contact with the quantum dot material, so that the problems of high temperature failure of the quantum dot and short service life of an LED exist.
Disclosure of Invention
The to-be-solved technical problem of the utility model is to provide a LED display structure of full-color conversion of realization rational in infrastructure, longe-lived.
In order to solve the above problem, the utility model provides a realize full-color conversion's LED and show structure, include:
a substrate;
the three LED integrated chips are fixed on the substrate;
the heat insulation layer covers the three LED integrated chips;
the red light quantum dot layer, the green light quantum dot layer and the transparent layer are arranged on the heat insulation layer and are in one-to-one correspondence with the three LED integrated chips.
As a further improvement of the utility model, be equipped with on the insulating layer and hold respectively the three recess of ruddiness quantum dot layer, green glow quantum dot layer and stratum lucidum.
As a further improvement of the utility model, the thermal insulation layer is made of molding glue.
As a further improvement of the utility model, the heat insulation layer is formed by adopting a mould pressing technology,
as a further improvement of the utility model, the heat insulation layer is white or black.
As a further improvement of the utility model, the quantum dots in the red light quantum dot layer emit red light with the wavelength of 610-650nm after being excited by light with the wavelength of 300-450 nm; the quantum dots in the green light quantum dot layer emit green light with the wavelength of 510-550nm after being excited by light with the wavelength of 300-450 nm; the quantum dots in the transparent layer emit blue light with the wavelength of 450-480nm after being excited by light with the wavelength of 300-450 nm.
As a further improvement of the present invention, the substrate is a cup-shaped substrate, a flat substrate, a multi-layer circuit array light-emitting unit substrate or a multi-layer circuit array light-emitting unit substrate with a driver IC.
As a further improvement of the utility model, the red light quantum dot layer, the green light quantum dot layer and the transparent layer are formed by glue injection or ink jet.
As a further improvement of the utility model, the sealing layer is also included, and the sealing layer is glass cover plate or molding glue.
The utility model has the advantages that:
the utility model discloses realize full-color conversion's LED and show the structure and through setting up the insulating layer, completely cut off quantum dot layer and LED integrated chip, avoided LED integrated chip to give out light, overheated the inefficacy that leads to the quantum dot material, greatly promoted the life of quantum dot material and whole product.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented according to the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more obvious and understandable, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic structural diagram of an LED display structure for implementing full color conversion according to a preferred embodiment of the present invention.
Description of the labeling: 1. a substrate; 2. a thermal insulation layer; 3. an LED integrated chip; 4. a sealing layer; 5. a transparent layer; 6. a green quantum dot layer; 7. a red quantum dot layer.
Detailed Description
The present invention is further described with reference to the following drawings and specific embodiments so that those skilled in the art can better understand the present invention and can implement the present invention, but the embodiments are not to be construed as limiting the present invention.
As shown in fig. 1, in order to realize the LED display structure of full color conversion in the preferred embodiment of the present invention, the LED display structure of full color conversion includes a substrate 1, three LED integrated chips 3, a heat insulation layer 2, a sealing layer 4, a red light quantum dot layer 7, a green light quantum dot layer 6, and a transparent layer 5.
Three LED integrated chip 3 are fixed in on the base plate 1, and thermal-protective layer 2 covers on three LED integrated chip 3, and ruddiness quantum dot layer 7, green glow quantum dot layer 6 and stratum lucidum 5 are located on thermal-protective layer 2 and are set up with three LED integrated chip 3 one-to-one.
In one embodiment, the thermal insulating layer 2 is provided with three grooves for accommodating the red quantum dot layer 7, the green quantum dot layer 6 and the transparent layer 5, respectively. The red light quantum dot layer 7, the green light quantum dot layer 6 and the transparent layer 5 are formed by glue injection or ink jet. The thickness control of the quantum dot layer is facilitated, and the light emitting consistency of the LED product is obviously improved. The manner of forming the groove includes molding, coating, drilling, cutting, etc.
In one embodiment, the thermal insulation layer 2 is made of molding compound. Preferably, epoxy acrylic system glue is selected.
In one embodiment, the thermal insulation layer 2 is filled around the LED integrated chip 3. Is beneficial to increasing the stability of the structure.
The LED integrated chip 3 is a blue light chip or an ultraviolet light chip. The LED integrated chip 3 is a front-mounted chip, a flip chip or a vertical chip. In the present embodiment, the LED integrated chip 3 is a blue chip capable of emitting wavelengths 420 and 425.
The quantum dots in the red light quantum dot layer 7 emit red light with the wavelength of 610-650nm after being excited by light with the wavelength of 300-450 nm; the quantum dots in the green light quantum dot layer 6 emit green light with the wavelength of 510-550nm after being excited by light with the wavelength of 300-450 nm; the quantum dots in the transparent layer 5 emit blue light with the wavelength of 450-480nm after being excited by light with the wavelength of 300-450 nm.
The substrate 1 is a cup-shaped substrate, a flat substrate, a multi-layer circuit array light emitting unit substrate, or a multi-layer circuit array light emitting unit substrate with a driver IC.
The quantum dot material has the characteristic of being fearful of water and oxygen and is not high-temperature resistant. Further, the LED display structure for realizing full color conversion also comprises a sealing layer 4, wherein the sealing layer 4 is arranged on the red light quantum dot layer 7, the green light quantum dot layer 6 and the transparent layer 5, and the sealing layer 4 is a glass cover plate or molding glue and the like. The sealing layer 4 is matched with the heat insulation layer 2 for sealing, so that the quantum dot material is isolated from a water-oxygen environment.
The utility model discloses realize full-color conversion's LED and show the structure and through setting up the insulating layer, completely cut off quantum dot layer and LED integrated chip, avoided LED integrated chip to give out light, overheated the inefficacy that leads to the quantum dot material, greatly promoted the life of quantum dot material and whole product.
The above embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. Equivalent substitutes or changes made by the technical personnel in the technical field on the basis of the utility model are all within the protection scope of the utility model. The protection scope of the present invention is subject to the claims.
Claims (8)
1. An LED display structure for realizing full color conversion, comprising:
a substrate;
the three LED integrated chips are fixed on the substrate;
the heat insulation layer covers the three LED integrated chips;
the red light quantum dot layer, the green light quantum dot layer and the transparent layer are arranged on the heat insulation layer and are in one-to-one correspondence with the three LED integrated chips;
and three grooves for respectively accommodating the red light quantum dot layer, the green light quantum dot layer and the transparent layer are arranged on the heat insulation layer.
2. The LED display structure for realizing full color conversion according to claim 1, wherein the thermal insulation layer is a molding compound.
3. The full color conversion enabled LED display structure of claim 1, wherein said thermal barrier layer is formed using a molding technique.
4. The LED display structure for full color conversion according to claim 1, wherein the thermal insulation layer is white or black.
5. The LED display structure for realizing full color conversion as claimed in claim 1, wherein the quantum dots in the red quantum dot layer emit red light with wavelengths of 610-650nm after being excited by light with wavelengths of 300-450 nm; the quantum dots in the green light quantum dot layer emit green light with the wavelength of 510-550nm after being excited by light with the wavelength of 300-450 nm; the quantum dots in the transparent layer emit blue light with the wavelength of 450-480nm after being excited by light with the wavelength of 300-450 nm.
6. The LED display structure for realizing full color conversion according to claim 1, wherein the substrate is a cup-shaped substrate, a flat-plate substrate, a multi-layer circuit array light-emitting unit substrate or a multi-layer circuit array light-emitting unit substrate with a driving IC.
7. The LED display structure for full color conversion according to claim 1, wherein the red quantum dot layer, the green quantum dot layer and the transparent layer are formed by injecting or jetting ink.
8. The LED display structure capable of full color conversion according to claim 7, further comprising a sealing layer, wherein the sealing layer is a glass cover plate or a molding compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021668686.9U CN211670213U (en) | 2020-08-12 | 2020-08-12 | LED display structure for realizing full-color conversion |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202021668686.9U CN211670213U (en) | 2020-08-12 | 2020-08-12 | LED display structure for realizing full-color conversion |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113725248A (en) * | 2021-08-24 | 2021-11-30 | 上海天马微电子有限公司 | Display device and manufacturing method thereof |
| CN114447189A (en) * | 2022-01-21 | 2022-05-06 | 东莞市中麒光电技术有限公司 | Hole array forming method, light emitting structure, display module manufacturing method and display module |
-
2020
- 2020-08-12 CN CN202021668686.9U patent/CN211670213U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113725248A (en) * | 2021-08-24 | 2021-11-30 | 上海天马微电子有限公司 | Display device and manufacturing method thereof |
| CN114447189A (en) * | 2022-01-21 | 2022-05-06 | 东莞市中麒光电技术有限公司 | Hole array forming method, light emitting structure, display module manufacturing method and display module |
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