CN211537712U - Simple microwave plasma reaction device for rapidly preparing materials - Google Patents
Simple microwave plasma reaction device for rapidly preparing materials Download PDFInfo
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- CN211537712U CN211537712U CN201922283115.7U CN201922283115U CN211537712U CN 211537712 U CN211537712 U CN 211537712U CN 201922283115 U CN201922283115 U CN 201922283115U CN 211537712 U CN211537712 U CN 211537712U
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- cover body
- microwave plasma
- air inlet
- wall
- air outlet
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 23
- 239000000463 material Substances 0.000 title claims abstract description 23
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 6
- 238000002360 preparation method Methods 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
The utility model discloses a simple microwave plasma reaction device for rapidly preparing materials, which comprises a cover body arranged in a reaction cavity of a microwave plasma chemical vapor deposition device, the cover body comprises an air inlet part and an air outlet part which are arranged up and down correspondingly, the inner wall of the air inlet part is provided with an air inlet hole group, the inner wall of the air outlet part is provided with an air outlet hole group, the air inlet hole group comprises a plurality of air inlet holes, the air inlet holes are circumferentially arranged on the inner wall of the cover body, the air outlet hole group comprises a plurality of air outlet holes, the inner wall at the cover body is seted up to venthole circumference, the aperture of inlet port is greater than the aperture of venthole, the utility model discloses mainly play the effect that changes gas concentration and plasma strength in the air unit volume, can last work under normal atmospheric temperature and pressure, supplementary growth high purity, high-quality material have fine industrial application prospect.
Description
Technical Field
The utility model relates to a microwave plasma application technology field especially relates to a simple and easy microwave plasma reaction unit of quick preparation material.
Background
The plasma has higher ionization degree, dissociation degree and electron temperature, can discharge without electrodes, eliminates electrode pollution and the like, and the plasma excited by the microwave can generate large-volume plasma, which is one of effective means for preparing new materials.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a simple and easy microwave plasma reaction unit of quick preparation material to solve the problem that above-mentioned prior art exists, make the device can last long-time work under the ordinary pressure, the industrial extensive popularization and application of being convenient for.
In order to achieve the above object, the utility model provides a following scheme: the utility model provides a prepare simple and easy microwave plasma reaction unit of material fast, including setting up the cover body in microwave plasma chemical vapor deposition device's reaction intracavity, the cover body is including the air inlet and the portion of giving vent to anger that correspond the setting from top to bottom, the air inlet group has been seted up on the inner wall of air inlet, the air outlet group has been seted up on the inner wall of the portion of giving vent to anger, the air inlet group includes a plurality of inlet port, inlet port circumference is seted up on the inner wall of the cover body, the air outlet group includes a plurality of venthole, venthole circumference is seted up on the inner wall of the cover body, the aperture of inlet port is greater than the aperture of venthole.
Preferably, a plurality of the air inlets are symmetrically and dispersedly arranged on the inner wall of the air inlet part.
Preferably, a plurality of the air outlet holes are symmetrically and dispersedly arranged on the inner wall of the bottom end of the air outlet part.
Preferably, the air inlet part is of a hemispherical structure, the air outlet part is of a cylindrical structure, and the bottom surface of the air inlet part is fixed on the top surface of the air outlet part to form an integrated structure.
Preferably, the aperture of the air inlet hole is
Preferably, the aperture of the air outlet is
Preferably, the material of the cover body is quartz material.
The utility model discloses a following technological effect: the cover body of the utility model is arranged in the reaction cavity of the microwave plasma chemical vapor deposition device, so that the cover body is positioned in the microwave area, meanwhile, the reactant to be reacted is placed in the cover body, the mixed gas is introduced through the air inlet, when the mixed gas reaches the microwave area, the pressure valve of the air inlet pipe enters the cover body to generate plasma, the aperture of the air inlet hole in the cover body is larger than that of the air outlet hole, the gas inlet and outlet rate can be controlled, the gas inlet and outlet amount and rate of the mixed gas can be adjusted by the cooperation of an external pressure valve, the gas concentration of the mixed gas can be effectively controlled and changed, and the plasma intensity can be controlled, and then can be at normal atmospheric temperature and pressure under the continuous work, high-purity, high-quality material of growth in the auxiliary cover body has fine industrial application prospect, the utility model discloses simple structure and easily production have reduced use cost simultaneously.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive labor.
FIG. 1 is a schematic structural view of a simple microwave plasma reaction apparatus for rapid preparation of materials according to the present invention;
wherein, 1 is the cover body, 1.1 is the air inlet portion, 1.2 is the portion of giving vent to anger, 2 is the inlet port, 3 is the venthole.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention is described in detail with reference to the accompanying drawings and the detailed description.
Referring to fig. 1, the present invention provides a simple microwave plasma reaction apparatus for rapidly preparing materials, which belongs to a microwave plasma reactor airflow adjusting apparatus, comprising a cover body 1 disposed in a reaction chamber (not shown) of a microwave plasma chemical vapor deposition apparatus, wherein the cover body 1 is made of quartz material, the cover body 1 comprises an air inlet portion 1.1 and an air outlet portion 1.2 disposed correspondingly from top to bottom, the air inlet portion 1.1 is of a hemispherical structure, the air outlet portion 1.2 is of a cylindrical structure, the whole body thereof forms a bell-shaped structure, the bottom surface of the air inlet portion 1.1 is fixed on the top surface of the air outlet portion 1.2 to form an integral structure, the inner wall of the air inlet portion 1.1 is provided with an air inlet hole set, the inner wall of the air outlet portion 1.2 is provided with an air outlet hole set, the air inlet hole set comprises a plurality of air inlet holes 2, the air inlet holes 2 are circumferentially disposed on the inner wall of the cover body 1, a plurality of 2 symmetric dispersion of inlet port set up on the inner wall of air inlet portion 1.1, the gas outlet group includes a plurality of venthole 3, 3 circumference of venthole are seted up on the inner wall of the cover body 1, a plurality of 3 symmetric dispersion of venthole sets up at air outlet portion 1.2, the aperture of the air inlet hole 2 is larger than that of the air outlet hole 3, the distribution of the air outlet holes 3 needs to be symmetrically dispersed along the bottom of the cover body 1 in the manufacturing process, and the aperture size is kept at
The aperture size of the air inlet hole 2 is kept at
The air inlet holes 2 are distributed on the top of the cover body 1 and are symmetrically distributed.
The utility model discloses a use: after a reaction cavity of a vacuum microwave plasma chemical vapor deposition device is opened, a cover body 1 is placed on an objective table, namely the cover body 1 is positioned in a microwave area, a deposition substrate is placed in the cover body 1, the vacuum reaction cavity is closed, vacuumizing is performed, and then mixed gas (CH) is introduced into an air inlet hole 24、H2) The reaction may be carried out by adjusting the flow rate or flow velocity of the mixed gas with a pressure valve (not shown).
The utility model discloses a theory of operation: the electromagnetic oscillation with extremely high frequency generated by the microwave causes gas molecules to collide violently with each other, so that the plasma is excited and maintained, the controllability is good, the plasma with set distribution can be excited reproducibly by changing the oscillation mode of an electromagnetic field, the continuous work can be realized at normal temperature and normal pressure, high-purity and high-quality materials can grow in the auxiliary cover body, and the industrial application prospect is good.
In the description of the present invention, it is to be understood that the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are merely for convenience of description of the present invention, and do not indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
The above-mentioned embodiments are only intended to describe the preferred embodiments of the present invention, but not to limit the scope of the present invention, and those skilled in the art should also be able to make various modifications and improvements to the technical solution of the present invention without departing from the spirit of the present invention, and all such modifications and improvements are intended to fall within the scope of the present invention as defined in the appended claims.
Claims (7)
1. The utility model provides a simple and easy microwave plasma reaction unit of rapid preparation material, includes the cover body (1) of setting in the reaction chamber of microwave plasma chemical vapor deposition device, its characterized in that: the cover body (1) corresponds air inlet portion (1.1) and the portion of giving vent to anger (1.2) that sets up including from top to bottom, the inlet vent group has been seted up on the inner wall of air inlet portion (1.1), the outlet vent group has been seted up on the inner wall of the portion of giving vent to anger (1.2), the inlet vent group includes a plurality of inlet port (2), inlet port (2) circumference is seted up on the inner wall of the cover body (1), the outlet vent group includes a plurality of venthole (3), venthole (3) circumference is seted up on the inner wall of the cover body (1), the aperture of inlet port (2) is greater than the aperture of venthole (3).
2. The simplified microwave plasma reaction apparatus for rapidly preparing a material according to claim 1, wherein: the plurality of air inlets (2) are symmetrically and dispersedly arranged on the inner wall of the air inlet part (1.1).
3. The simplified microwave plasma reaction apparatus for rapidly preparing a material according to claim 1, wherein: the air outlet holes (3) are symmetrically and dispersedly arranged on the inner wall of the bottom end of the air outlet part (1.2).
4. The simplified microwave plasma reaction apparatus for rapidly preparing a material according to claim 1, wherein: the gas inlet part (1.1) is of a hemispherical structure, the gas outlet part (1.2) is of a cylindrical structure, and the bottom surface of the gas inlet part (1.1) is fixed on the top surface of the gas outlet part (1.2) to form an integrated structure.
5. According to the rightThe simple microwave plasma reaction device for rapidly preparing materials according to claim 1, which is characterized in that: the aperture of the air inlet hole (2) is
6. The simplified microwave plasma reaction apparatus for rapidly preparing a material according to claim 1, wherein: the aperture of the air outlet (3) is
7. The simplified microwave plasma reaction apparatus for rapidly preparing a material according to claim 1, wherein: the cover body (1) is made of quartz materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922283115.7U CN211537712U (en) | 2019-12-18 | 2019-12-18 | Simple microwave plasma reaction device for rapidly preparing materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922283115.7U CN211537712U (en) | 2019-12-18 | 2019-12-18 | Simple microwave plasma reaction device for rapidly preparing materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211537712U true CN211537712U (en) | 2020-09-22 |
Family
ID=72507170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922283115.7U Active CN211537712U (en) | 2019-12-18 | 2019-12-18 | Simple microwave plasma reaction device for rapidly preparing materials |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211537712U (en) |
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2019
- 2019-12-18 CN CN201922283115.7U patent/CN211537712U/en active Active
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