CN211507632U - IGBT module and electronic equipment - Google Patents
IGBT module and electronic equipment Download PDFInfo
- Publication number
- CN211507632U CN211507632U CN202020259635.4U CN202020259635U CN211507632U CN 211507632 U CN211507632 U CN 211507632U CN 202020259635 U CN202020259635 U CN 202020259635U CN 211507632 U CN211507632 U CN 211507632U
- Authority
- CN
- China
- Prior art keywords
- sheet
- igbt module
- heat
- igbt
- heat dissipation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The application provides an IGBT module and an electronic device. The IGBT module comprises a heat dissipation plate, a heat conduction sheet, a circuit board sheet and an IGBT chip which are sequentially arranged. This application is through setting up the heating panel in the IGBT module, can make the heat that the IGBT chip produced conduct the fin through the conducting strip to dispel the heat by the fin. Because the heat dissipation plate is formed by one plate, the heat dissipation plate can have the corresponding functions of a circuit board sheet, a ceramic sheet, a heat conducting sheet and a bottom plate in the prior art, the heat channeling among different layers in the related technology is reduced, and the heat dissipation speed is improved.
Description
Technical Field
The application relates to the technical field of IGBT heat dissipation, in particular to an IGBT module.
Background
The IGBT is a composite full-control type-voltage drive type-power semiconductor device composed of a BJT and a MOS, and is a non-on-off switch. In practical application, the IGBT can be used in power conversion situations, such as electric vehicles, variable frequency air conditioners, wind generators, and the like, and the control of the ac motor is realized by high-frequency switching. In the implementation process, the high-frequency switch generates heat, so development and research related to heat dissipation technology are needed.
In the related art, referring to fig. 1, the IGBT module includes a base plate, a base plate soldering lug, a ceramic copper-clad plate, a chip soldering lug, a diode and an IGBT chip, and finally, the IGBT module is bonded and wired.
Disclosure of Invention
In view of this, the present application provides an IGBT module and an electronic device to solve the problem of heat dissipation of the IGBT module in the prior art.
The application provides an IGBT module, including heating panel, conducting strip, circuit board piece and the IGBT chip that sets gradually.
In one embodiment, the heat dissipation plate and the circuit board sheet are made of the same material.
In one embodiment, the heat dissipation plate and the circuit board piece are made of AlSiC material.
In one embodiment, the thickness of any position of the heat-conducting sheet is within a set thickness range.
In one embodiment, the heat conducting sheet is made of silicone grease material.
In one embodiment, the IGBT chip includes a chip pad, two diodes, and tabs respectively disposed on the two diodes and the circuit board sheet; the key sheets on the two diodes are connected through a key bonding wire, and the key sheet on the circuit board piece is connected with the key sheet on the adjacent diode through the key bonding wire.
The application also provides electronic equipment which is characterized by comprising the IGBT module.
This application is through setting up the heating panel in the IGBT module, can make the heat that the IGBT chip produced conduct the fin through the conducting strip to dispel the heat by the fin. Because the heat dissipation plate is formed by one plate, the heat dissipation plate can have the corresponding functions of a circuit board sheet, a ceramic sheet, a heat conducting sheet and a bottom plate in the prior art, the heat channeling among different layers in the related technology is reduced, and the heat dissipation speed is improved.
Drawings
Fig. 1 is a schematic structural diagram of an IGBT module provided in the prior art.
Fig. 2 is a schematic structural diagram of an IGBT module provided in the present application.
Detailed Description
A specific structure of an IGBT module will be described in detail herein. Referring to fig. 2, an IGBT module includes a heat dissipation plate, a heat conduction fin, a circuit board sheet, and an IGBT chip, which are sequentially disposed. In practical application, the heat dissipation plate, the circuit board sheet and the IGBT chip can be formed by carrying out exposure projection etching, sputtering, electroplating and other processing steps on the substrate, and tempering, stress relieving and polishing. It should be noted that, a skilled person may adjust the process steps or the process principle according to a specific scenario, and in the case that the heat dissipation plate can be manufactured, the corresponding solution falls within the scope of protection of the present application.
In this embodiment, the heat dissipation plate can be understood as an integral molding of the ceramic plate, the base plate bonding pad and the base plate in fig. 1, so that the problem of different heat dissipation efficiency among layers can be reduced. In one example, the heat dissipation plate is made of AlSiC material. This is because of the thermal expansion coefficient of AlSiC and the commonly used substrate material Al2O3Close proximity is helpful for the thermal stability of high power IGBT modules, and moreover, AlSiC density is only 1/3 of copper, which is the best choice for the heat sink base plate.
In the present embodiment, it is considered that the heat of the heat dissipation plate comes from the wiring board sheet, and therefore, a heat conductive sheet needs to be provided between the heat dissipation plate and the wiring board sheet. In order to protect the IGBT chip, the thickness of any position of the heat conducting sheet in this embodiment is within a set thickness range. In practical application, the heat conducting fin can be made of silicone grease materials. In other words, in the embodiment, when the silicone grease is applied, the thickness and uniformity of each position are consistent, so that the thermal conductivity of each position tends to be the same, and the quality problem of chip overheating and tube explosion is avoided.
In this embodiment, the heat dissipation plate and the circuit board piece may be made of the same material, such as AlSiC material. Thus, the heat dissipation plate and the circuit board sheet can be integrally formed, for example, the circuit board sheet can be formed on the substrate through corresponding processes, a heat conduction sheet is not needed, and the thickness of the IGBT module is reduced.
With continued reference to fig. 2, the IGBT chip includes a chip bonding pad, two diodes, and tabs respectively disposed on the two diodes and the circuit board; the key sheets on the two diodes are connected through the key bonding wire, and the key sheet on the circuit board sheet is connected with the key sheet on the adjacent diode through the key bonding wire. Thus, an IGBT tube can be formed.
So far, this application is through setting up the heating panel in the IGBT module, can make the heat that the IGBT chip produced conduct the fin through the conducting strip to dispel the heat by the fin. Because the heat dissipation plate is formed by one plate, the heat dissipation plate can have the corresponding functions of a circuit board sheet, a ceramic sheet, a heat conducting sheet and a bottom plate in the prior art, the heat channeling among different layers in the related technology is reduced, and the heat dissipation speed is improved. In addition, in the application, along with the change of the IGBT module structure, the processing technology can be reduced by half, the production period is accelerated by 1/4, the IGBT module structure is small in size and light in weight, the cost is reduced by 3/4 compared with the original cost, the overall cost is reduced by 1/4, and the IGBT module structure can be widely applied to various electronic equipment (such as frequency converters).
The present application further provides an electronic device including the IGBT module shown in fig. 2. The electronic equipment can be a frequency converter or a device adopting variable frequency power, can be applied to the fields of electric automobiles, variable frequency air conditioners, wind driven generators, solar power plants, electric power energy storage and the like, and has a very good application prospect.
Claims (7)
1. The IGBT module is characterized by comprising a heat dissipation plate, a heat conduction sheet, a circuit board sheet and an IGBT chip which are sequentially arranged.
2. The IGBT module of claim 1, wherein the heat sink and the wiring board sheet are made of the same material.
3. The IGBT module according to claim 2, wherein the heat dissipation plate and the wiring board pieces are made of AlSiC material.
4. The IGBT module according to claim 1, wherein a thickness of the heat conductive sheet at any position is within a set thickness range.
5. The IGBT module of claim 4, wherein the thermally conductive sheet is made of a silicone grease material.
6. The IGBT module according to claim 1, wherein the IGBT chip comprises a chip pad, two diodes, and tabs respectively disposed on the two diodes and a wiring board sheet; the key sheets on the two diodes are connected through a key bonding wire, and the key sheet on the circuit board piece is connected with the key sheet on the adjacent diode through the key bonding wire.
7. An electronic device comprising the IGBT module according to any one of claims 1 to 6.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202020259635.4U CN211507632U (en) | 2020-03-05 | 2020-03-05 | IGBT module and electronic equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202020259635.4U CN211507632U (en) | 2020-03-05 | 2020-03-05 | IGBT module and electronic equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
CN211507632U true CN211507632U (en) | 2020-09-15 |
Family
ID=72402371
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202020259635.4U Active CN211507632U (en) | 2020-03-05 | 2020-03-05 | IGBT module and electronic equipment |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN211507632U (en) |
-
2020
- 2020-03-05 CN CN202020259635.4U patent/CN211507632U/en active Active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7564129B2 (en) | Power semiconductor module, and power semiconductor device having the module mounted therein | |
EP2328172B1 (en) | A power-electronic arrangement | |
CN107195623B (en) | Double-sided heat dissipation high-reliability power module | |
US11062972B2 (en) | Electronic module for power control and method for manufacturing an electronic module power control | |
JP2009536458A (en) | Semiconductor module and manufacturing method thereof | |
CN110060991B (en) | Intelligent power module and air conditioner | |
JP2007305702A (en) | Semiconductor device and its manufacturing method | |
US9923478B2 (en) | Capacitor arrangement and method for operating a capacitor arrangement | |
Liang et al. | Planar bond all: A new packaging technology for advanced automotive power modules | |
CN113130455A (en) | Multi-unit power integrated module with high thermal reliability and processing technology thereof | |
US20130170136A1 (en) | Pcb heat sink for power electronics | |
CN110797318A (en) | IGBT packaging structure with double-sided heat pipe cooling | |
CN109699120A (en) | Has the circuit board of high-efficiency heat conduction structure | |
JP2012138475A (en) | Semiconductor module and method for manufacturing the same | |
CN211507632U (en) | IGBT module and electronic equipment | |
CN211182190U (en) | Insulated gate bipolar transistor, intelligent power module and air conditioner | |
CN113097155A (en) | Chip heat conduction module and preparation method thereof | |
JP2011018736A (en) | Semiconductor device | |
CN216145615U (en) | Semiconductor circuit having a plurality of transistors | |
CN210379025U (en) | Power device packaging structure | |
JP2019161081A (en) | Electric power conversion device and manufacturing method of electric power conversion device | |
CN114899161A (en) | Module and manufacturing method thereof | |
CN114242664A (en) | Low-stress high-heat-conduction IGBT power module packaging structure | |
CN108417545B (en) | Power device and preparation method thereof | |
CN220456402U (en) | Power module and power equipment |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant |