CN211456988U - Switch driving circuit of high-voltage pulse power supply - Google Patents
Switch driving circuit of high-voltage pulse power supply Download PDFInfo
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- CN211456988U CN211456988U CN202020217029.6U CN202020217029U CN211456988U CN 211456988 U CN211456988 U CN 211456988U CN 202020217029 U CN202020217029 U CN 202020217029U CN 211456988 U CN211456988 U CN 211456988U
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Abstract
The utility model provides a high-voltage pulse power supply's switch drive circuit, include: the system comprises a preceding stage signal modulation module, a driving transformer T and an n-stage driving waveform control circuit which are connected in series; each stage of the driving waveform control circuit connected in series comprises: two diodes dnas, DnB, a PMOS transistor QnA, an NMOS transistor QnB, and a transient voltage suppressor TVSn for protection. The utility model discloses can realize the high-voltage pulse switch drive from hundred nanoseconds to the arbitrary width of direct current, pulse width does not receive the transformer saturation restriction. Simultaneously the utility model discloses the border is precipitous about the drive waveform, can realize the high-pressure pulse output at precipitous border, and the ascending and descending border can be low to ten nanoseconds.
Description
Technical Field
The utility model relates to a switch drive circuit technical field particularly, especially relates to a switch drive circuit of high-voltage pulse power supply.
Background
A commonly used pulse power driving control circuit is shown in fig. 1, and is characterized in that the circuit structure is simple, but the pulse width is limited, a driving transformer can only be used within a certain pulse width range, generally, the pulse width is below hundreds of microseconds, if the driving transformer is continuously conducted, the driving transformer is saturated, so that the driving of a switching tube cannot be continuously maintained, and when the pulse width is large, due to the existence of leakage inductance of the transformer, an output driving waveform at a wide range is easy to oscillate and reversely swing, so that the false action of the switching tube may be caused.
Disclosure of Invention
In light of the above-mentioned technical problems, a switch driving circuit for a high voltage pulse power supply is provided. The utility model discloses mainly utilize a high-voltage pulse power supply's switch drive circuit, include: the system comprises a preceding stage signal modulation module, a driving transformer T and an n-stage driving waveform control circuit which are connected in series; each stage of the driving waveform control circuit connected in series comprises: two diodes dnas, DnB, a PMOS transistor QnA, an NMOS transistor QnB, and a transient voltage suppressor TVSn for protection.
Further, when the pulse power supply receives a pulse switch conducting signal, a transformer driving wave is generated through the preceding stage signal modulation module, and the preceding stage signal modulation module is a logic gate circuit or an MCU; when the pulse switch is switched on, the transformer driving wave is a positive pulse train with a fixed pulse width of T1 and a period of T2, and when the pulse switch conducting signal disappears, the positive pulse train stops, outputs a negative pulse and works circularly; when the driving transformer outputs positive pulse, QnA of the PMOS tube is conducted, QnB of the NMOS tube is closed, and the gate charging switch tube of the switch tube Qn is conducted.
Further, when the pulse driving of the transformer is removed, the DnA diode is turned off in the reverse direction, and the gate charge of the switch tube Qn will remain on.
Further, the PMOS transistor QnA is IRFD 9110; the NMOS transistor QnN is IRFD 110.
Compared with the prior art, the utility model has the advantages of it is following:
1. the utility model discloses can realize the high-voltage pulse switch drive from hundred nanoseconds to the arbitrary width of direct current, pulse width does not receive the transformer saturation restriction.
2. The utility model discloses the border is precipitous about the drive waveform, can realize the high-pressure pulse output at precipitous border, and the ascending and descending border can be low to ten nanoseconds.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive labor.
Fig. 1 shows a conventional pulse power supply driving control circuit.
Fig. 2 shows the pulse power supply driving control circuit of the present invention.
Fig. 3 is a schematic diagram of the driving waveform signal of the transformer of the present invention.
Detailed Description
In order to make the technical solution of the present invention better understood, the technical solution of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts shall belong to the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
As shown in fig. 1-3, the utility model provides a switch driving circuit of high-voltage pulse power supply, which is characterized in that, include: the system comprises a preceding stage signal modulation module, a driving transformer T and an n-stage driving waveform control circuit which are connected in series; each stage of the driving waveform control circuit connected in series comprises: two diodes dnas, DnB, a PMOS transistor QnA, an NMOS transistor QnB, and a transient voltage suppressor TVSn for protection.
When the pulse power supply receives a pulse switch conducting signal, a transformer driving waveform signal shown in fig. 3, namely a transformer driving wave, is generated through the preceding-stage signal modulation module, and the preceding-stage signal modulation module is a logic gate circuit or an MCU. As a preferred embodiment of the present application, the MCU referred to in the present application may employ STM32F103RBT 6. It is understood that in other embodiments, the MCU may be configured to modulate the signal via the pre-stage signal modulation module when the pulse power supply receives the pulse switch conducting signal.
As a preferred embodiment of the present application, when the pulse switch is turned on, the transformer driving wave is a positive pulse train with a fixed pulse width of T1 and a period of T2, and when the pulse switch on signal disappears, the positive pulse train stops, outputs a negative pulse and works cyclically; when the driving transformer outputs positive pulse, QnA of the PMOS tube is conducted, QnB of the NMOS tube is closed, and the gate charging switch tube of the switch tube Qn is conducted.
According to the above description, when the pulse driving of the transformer disappears, it can be analyzed that QnB still does not conduct, the diode DnA is turned off in reverse direction, the gate charge of the switch tube Qn will be maintained, so that the switch tube continues to conduct, however, there will be a small leakage current in the semiconductor device, the gate charge of the switch tube will leak slowly, resulting in a slow drop of the driving voltage of the gate, at this time, the switch tube will close itself if the charge is not supplemented, therefore, the driving transformer provides a positive pulse again after the T2 time interval, so as to ensure that the switch tube is always in the conducting state. When the switching tube needs to be closed, the driving transformer outputs a negative pulse, and analysis shows that QnB is conducted, the grid electrode of the switching tube is pumped with charges, the grid electrode voltage is changed from positive to negative, and the switching tube is closed in the process, so that pulse turn-off is realized.
In this embodiment, when the pulse driving of the transformer is removed, the DnA diode is turned off in the reverse direction, and the gate charge of the switching tube Qn is kept on.
As a preferred example of the present embodiment, the PMOS transistor QnA is IRFD 9110; the NMOS transistor QnN is IRFD 110.
The above embodiment numbers of the present invention are only for description, and do not represent the advantages and disadvantages of the embodiments.
In the above embodiments of the present invention, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to the related descriptions of other embodiments.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention.
Claims (2)
1. A switch driving circuit of a high-voltage pulse power supply, comprising:
the system comprises a preceding stage signal modulation module, a driving transformer T and an n-stage driving waveform control circuit which are connected in series; each stage of the driving waveform control circuit connected in series comprises: two diodes DnA, DnB, a PMOS tube QnA, an NMOS tube QnB and a transient voltage suppressor TVSn for protection;
when the pulse power supply receives a pulse switch conducting signal, a transformer driving wave is generated through the preceding stage signal modulation module, and the preceding stage signal modulation module is a logic gate circuit or an MCU; when the pulse switch is switched on, the transformer driving wave is a positive pulse train with a fixed pulse width of T1 and a period of T2, and when the pulse switch conducting signal disappears, the positive pulse train stops, outputs a negative pulse and works circularly; when the driving transformer outputs a positive pulse, QnA of the PMOS tube is switched on, QnB of the NMOS tube is switched off, and a gate charging switch tube of the switch tube QnB is switched on;
when the pulse driving of the transformer is removed, the diode DnA is turned off in the reverse direction, and the gate charge of the switch tube Qn will remain on.
2. The switch driving circuit of a high-voltage pulse power supply according to claim 1, wherein: the PMOS tube QnA is IRFD 9110; the NMOS transistor QnB is IRFD 110.
Priority Applications (1)
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CN202020217029.6U CN211456988U (en) | 2020-02-27 | 2020-02-27 | Switch driving circuit of high-voltage pulse power supply |
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CN202020217029.6U CN211456988U (en) | 2020-02-27 | 2020-02-27 | Switch driving circuit of high-voltage pulse power supply |
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