CN101739937B - Gate driving circuit - Google Patents

Gate driving circuit Download PDF

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Publication number
CN101739937B
CN101739937B CN2010100006940A CN201010000694A CN101739937B CN 101739937 B CN101739937 B CN 101739937B CN 2010100006940 A CN2010100006940 A CN 2010100006940A CN 201010000694 A CN201010000694 A CN 201010000694A CN 101739937 B CN101739937 B CN 101739937B
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gate
transistor
driver circuit
signal
gate driver
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CN101739937A (en
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黄文江
汪志松
何宇玺
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AU Optronics Corp
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AU Optronics Corp
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Abstract

The invention discloses a gate driving circuit applied to receiving an external gate power supply voltage and an external control signal, generating a plurality of internal shift data signal groups in turn, and outputting a plurality of gate signals in turn according to the external gate power supply voltage, the external control signal and the internal shift data signal groups. Each internal shift data signal group comprises a plurality of internal shift data signals generated in turn. The gate driving circuit comprises a plurality of gate signal generation modules, wherein each gate signal generation module comprises a voltage modulator circuit and a gate output buffer circuit. The voltage modulator circuit modulates the external gate power supply voltage by using corresponding signals in the internal shift data signal group and the external control signal so as to acquire the modulated voltage signal. The gate output buffer circuit comprises a plurality of output stages coupled in parallel, which can be enabled in turn to output the modulated voltage signal so as to acquire a part of grid signals. The gate driving circuit can effectively suppress large peak current and avoid redundant power loss and/or circuit burnout.

Description

Gate driver circuit
Technical field
The present invention relates to the display technique field, relate in particular to a kind of gate driver circuit, be suitable for being applied to active matrix display device.
Background technology
Referring to Fig. 1, it illustrates the structured flowchart into existing active matrix display device.As shown in Figure 1, active matrix display device 100 comprises display base plate 110, printed circuit board (PCB) 130, be electrically coupled to a plurality of source electrode driven integrated circuits (indicating) between display panel 110 and the printed circuit board (PCB) 130 and comprise grid-driving integrated circuit Y1 that a plurality of cascades couple and the gate driver circuit of Y2.Wherein, be formed with thin film transistor (TFT) array (not illustrating) on the display base plate 110, grid-driving integrated circuit Y1 in the gate driver circuit and Y2 are electrically coupled to the thin film transistor (TFT) array of display base plate 110 with the switch as each thin film transistor (TFT); Printed circuit board (PCB) 130 is provided with PWM circuit 132; Its control that receives control signal CS is modulated grid power supply voltage VGH; For example top rake is modulated and is got modulated voltage signal VGG, and modulated voltage signal VGG inputs to grid-driving integrated circuit Y1 and the Y2 in the gate driver circuit afterwards.At this; After grid power supply voltage VGH modulates via PWM circuit 132; The waveform of waveform in the time of can making its control front film transistor of the follow-up signal of being exported in regular turn by gate driver circuit during with control tail end thin film transistor (TFT) is more consistent, and then can obtain than uniform display effect.
Yet; Be modulated in the process of modulated voltage signal VGG at grid power supply voltage VGH top rake; Because the modulated voltage signal VGG that the grid-driving integrated circuit Y1 that couples of cascade and Y2 provide with same PWM circuit 132 is as supply voltage; And the current potential of modulated voltage signal VGG is periodically variable; When the current potential of modulated voltage signal VGG when grid power supply voltage VGH top rake is returned to grid power supply voltage VGH after than low level again, discharge currents that form in the PWM circuit 132 can sharply increase and big peak point current (high peak current) occur, cause bigger power loss even can cause circuit burnout.
Summary of the invention
The object of the invention is providing a kind of gate driver circuit exactly, and the peak point current big with effective inhibition occurs, and avoids redundant power loss and/or avoids circuit burnout.
A kind of gate driver circuit that the embodiment of the invention proposes; Be suitable for receiving external gate supply voltage and external control signal, produce a plurality of internal displacement data signal group in regular turn; And export a plurality of signals in regular turn according to external gate supply voltage, external control signal and internal displacement data signal group, each internal displacement data signal group comprises a plurality of internal displacement data-signals that produce in regular turn; The gate driver circuit of present embodiment comprises a plurality of gate signal generation module, and each gate signal generation module comprises voltage modulation circuit and gate output buffer.Wherein, voltage modulation circuit utilize corresponding person and external control signal in the internal displacement data signal group external gate supply voltage that inputs to voltage modulation circuit is modulated and modulated voltage signal; Gate output buffer comprises the output stage of a plurality of coupled in parallel, and these output stages are enabled so that modulated voltage signal output is got the part person in the above-mentioned signal in regular turn.
In one embodiment of this invention, above-mentioned a plurality of gate signal generation module are arranged in the single gate drive integrated circult, so that above-mentioned gate driver circuit comprises the single gate drive integrated circult; Or above-mentioned a plurality of gate signal generation module are arranged in two grid-driving integrated circuits at least, so that above-mentioned gate driver circuit comprises at least two grid-driving integrated circuits.
In one embodiment of this invention, above-mentioned voltage modulation circuit comprises the first transistor, transistor seconds and control module; First source/drain electrode of the first transistor receives the external gate supply voltage because of the electric property coupling relation; First source/drain electrode of transistor seconds is electrically coupled to preset potential; Second source/drain electrode of transistor seconds is electrically coupled to second source/drain electrode of the first transistor and as the output terminal of modulated voltage signal, and the grid of transistor seconds and the grid of the first transistor be electric property coupling mutually; Control module is controlled first and second transistorized grid voltage to determine first and second transistorized conduction and cut-off state, the conduction and cut-off opposite states of the first transistor and transistor seconds according to corresponding person in these internal displacement data signal group and external control signal.
In one embodiment of this invention, the output stage of above-mentioned grid output buffer is enabled through the corresponding person in the internal displacement data signal group in regular turn.
The another kind of gate driver circuit that the embodiment of the invention proposes is applied to comprise the active matrix display device of printed circuit board (PCB), and printed circuit board (PCB) is in order to provide grid power supply voltage, control signal and preset potential; Gate driver circuit in the present embodiment comprises: grid power supply voltage input line, control signal incoming line, preset potential incoming line, a plurality of internal displacement data output channel groups and a plurality of gate signal generation module.Wherein, the grid power supply voltage input line receives the grid supply voltage because of the electric property coupling relation, and the control signal incoming line receives control signal because of the electric property coupling relation, and the preset potential incoming line is electrically coupled to preset potential.Each gate signal generation module comprises voltage modulation circuit and gate output buffer; Voltage modulation circuit is electrically coupled between grid power supply voltage input line and the preset potential incoming line and comprises output terminal and a plurality of input end, and these input ends are electrically coupled to corresponding person and the control signal incoming line in the internal displacement data output channel group; Gate output buffer is electrically coupled to the output terminal of voltage modulation circuit and modulates back and modulated voltage signal that get to receive voltage modulation circuit to grid power supply voltage, and it is further in order to export a plurality of signals according to modulated voltage signal in regular turn.
In one embodiment of this invention, above-mentioned a plurality of gate signal generation module are arranged in the single gate drive integrated circult, so that gate driver circuit comprises the single gate drive integrated circult; Or above-mentioned a plurality of gate signal generation module are arranged in two grid-driving integrated circuits at least, so that gate driver circuit comprises at least two grid-driving integrated circuits.
In one embodiment of this invention, above-mentioned voltage modulation circuit comprises first conductivity type of transistor, second conductivity type of transistor and control module; Wherein, first of first conductivity type of transistor source/drain electrode is electrically coupled to the grid power supply voltage input line; First source/drain electrode of second conductivity type of transistor is electrically coupled to the preset potential incoming line; Second source/drain electrode of second conductivity type of transistor is electrically coupled to second source/drain electrode of first conductivity type of transistor and as the output terminal of voltage modulation circuit, and the grid of the grid of second conductivity type of transistor and first conductivity type of transistor is electric property coupling mutually; Corresponding person in control module and the above-mentioned a plurality of internal displacement data output channel groups and control signal incoming line be electric property coupling mutually; In order to control the conduction and cut-off state of first and second conductivity type of transistor, to make the conduction and cut-off opposite states of the conductivity type of transistor and second conductivity type of transistor of winning.
In one embodiment of this invention; Above-mentioned gate output buffer comprises the output stage of a plurality of coupled in parallel, and these output stages are electrically coupled to a plurality of internal displacement data output channels of the corresponding person in above-mentioned a plurality of internal displacement data output channels respectively and are enabled in regular turn and export above-mentioned a plurality of signals.
In one embodiment of this invention, above-mentioned preset potential incoming line sees through the resistance that is arranged on the printed circuit board (PCB) and preset potential electric property coupling mutually.
The embodiment of the invention is through dividing into gate driver circuit a plurality of gate signal generation module and making these gate signal generation module all have independently voltage modulation circuit (for example being used for the top rake modulation); So that the modulated voltage signal that each gate signal generation module employing different voltages with different modulation circuit provides is as its supply voltage; Therefore can effectively suppress big peak point current and occur, avoid redundant power loss and/or avoid circuit burnout.
Description of drawings
Accompanying drawing described herein is used to provide further understanding of the present invention, constitutes the application's a part, does not constitute qualification of the present invention.In the accompanying drawings:
Fig. 1 shows the structured flowchart of existing active matrix display device;
Fig. 2 shows the circuit block diagram of the gate driver circuit that is relevant to the embodiment of the invention;
Fig. 3 shows the sequential chart of a plurality of internal displacement data signal group of the shift cache circuit generation in the gate driver circuit shown in Figure 2;
Fig. 4 shows the particular circuit configurations of the gate signal generation module in the gate driver circuit shown in Figure 2;
Fig. 5 shows the annexation of output stage shown in Figure 4 and gate line;
Fig. 6 shows the sequential chart of a plurality of signals that are relevant to gate signal generation module shown in Figure 4.
Drawing reference numeral:
100: active matrix display device
110: display base plate
130: printed circuit board (PCB)
132: the PWM circuit
Y1, Y2: grid-driving integrated circuit
VGH: grid power supply voltage
CS: control signal
VGG: modulated voltage signal
R E: resistance
I (VGH): electric current
VEE: supply voltage
20: gate driver circuit
201: the grid power supply voltage input line
203: the control signal incoming line
205: the preset potential incoming line
GND: earthing potential
230: printed circuit board (PCB)
21: gate signal generation module
212: voltage modulation circuit
214: gate output buffer
23: shift cache circuit
2120: control module
P transistor npn npn: MPy
N transistor npn npn: MNy
Y1~Ym: internal displacement data output channel
Embodiment
For let above-mentioned and other purposes of the present invention, feature and advantage can be more obviously understandable, hereinafter is special lifts preferred embodiment, and conjunction with figs., elaborates as follows.
Referring to Fig. 2, a kind of gate driver circuit 20 that the embodiment of the invention proposes and printed circuit board (PCB) 230 be electric property coupling mutually.Wherein, printed circuit board (PCB) 230 is in order to provide for example earthing potential GND of grid power supply voltage VGH, control signal CS and preset potential to gate driver circuit 20.Gate driver circuit 20 comprises grid power supply voltage input line 201, control signal incoming line 203, preset potential incoming line 205, a plurality of gate signal generation module 21 and shift cache circuit 23; Grid power supply voltage input line 201 receives grid supply voltage VGH because of the electric property coupling relation, and control signal incoming line 203 receives control signal CS because of the electric property coupling relation, and preset potential incoming line 205 sees through and is arranged at the resistance R on the printed circuit board (PCB) 230 EBe electrically coupled to earthing potential GND.
Hold above-mentionedly, each gate signal generation module 21 comprises voltage modulation circuit 212 and gate output buffer 214.Voltage modulation circuit 212 is electrically coupled between grid power supply voltage input line 201 and the preset potential incoming line 205, and a plurality of input ends of voltage modulation circuit 212 are electrically coupled to the corresponding person among a plurality of internal displacement data output channel group 1~N of control signal incoming line 203 and shift cache circuit 23.Gate output buffer 214 is electrically coupled to the output terminal of voltage modulation circuit 212 and modulates back and modulated voltage signal VGG that get to receive 212 pairs of grid power supply voltage of voltage modulation circuit VGH; At this, gate output buffer 214 is in order to export a plurality of signals according to modulated voltage signal VGG in regular turn.In the present embodiment, gate output buffer 214 also is electrically coupled to the corresponding person among a plurality of internal displacement data output channel group 1~N of shift cache circuit 23.
Referring to Fig. 3; The internal displacement data output channel group 1~N of the shift cache circuit 23 in the present embodiment comprises that respectively a plurality of internal displacement data output channels are to produce a plurality of internal displacement data-signals in regular turn; Thereby internal displacement data output channel group 1~N then can produce N internal displacement data signal group in regular turn, and each internal displacement data signal group comprises a plurality of internal displacement data-signals that produce in regular turn.
Referring to Fig. 4, it shows the particular circuit configurations figure of the gate signal generation module 21 that is relevant to the embodiment of the invention.As shown in Figure 4, voltage modulation circuit 212 comprises P transistor npn npn MPy, N transistor npn npn MNy and control module 2120.The source electrode of P transistor npn npn MPy is electrically coupled to grid power supply voltage input line 201 to receive grid supply voltage VGH, and the drain electrode of P transistor npn npn MPy is as the output terminal of modulated voltage signal VGG.The grid of the grid of N transistor npn npn MNy and P transistor npn npn MPy is electric property coupling mutually, and the source electrode of N transistor npn npn MNy is electrically coupled to preset potential incoming line 205, and the drain electrode of N transistor npn npn MNy is electrically coupled to the drain electrode of P transistor npn npn MPy.Control module 2120 comprises phase inverter or door and Sheffer stroke gate; Wherein, phase inverter in order to control signal CS is carried out operated in anti-phase the control signal after the anti-phase; Or door is electrically coupled to internal displacement data output channel Y1~Ym of the internal displacement data output channel group Y among the internal displacement data output channel group 1~N of shift cache circuit 23, in order to internal displacement data signal group actuating logic or (OR) operation that inner shifted data output channel Y1~Ym is provided; Sheffer stroke gate is carried out the conduction and cut-off state that P transistor npn npn MPy and N transistor npn npn MNy are controlled in logical and non-(NAND) operation in order to the result to control signal after the anti-phase and logical OR operation.At this, the conduction and cut-off opposite states of P transistor npn npn MPy and N transistor npn npn MNy.
Gate output buffer 214 comprises the output stage of a plurality of coupled in parallel; These output stages electric property coupling internal displacement data output channel Y1~Ym are respectively enabled with the control that receives the internal displacement data signal group that is produced by internal displacement data output channel Y1~Ym in regular turn, thereby export a plurality of signals.Further, each output stage comprises and is connected in series and is electrically connected at P transistor npn npn and the N transistor npn npn between modulated voltage signal VGG and the supply voltage VEE and is electrically connected to the P transistor npn npn and the RC series circuit of the drain electrode of N transistor npn npn; Wherein, the grid of the grid of P transistor npn npn and N transistor npn npn is electrically connected and accepts the control of internal displacement data-signal.At this, the RC series circuit is represented the equivalent load of the gate line of output stage phase electric property coupling therewith, and practical circuit diagram can be with reference to figure 5; As shown in Figure 5, the output of the drain electrode of P transistor npn npn and N transistor npn npn is as the output of gate line.
Referring to Fig. 6, it shows the sequential chart of a plurality of signals that are relevant to gate signal generation module 21.Can learn in conjunction with Fig. 4 and Fig. 6; During internal displacement data output channel Y1~Ym produced the internal displacement data-signal in regular turn, when control signal CS was high levels, MPy conducting of P transistor npn npn and N transistor npn npn MNy ended; This moment, the current potential of modulated voltage signal VGG equaled grid power supply voltage VGH; When control signal CS became low level by high levels, P transistor npn npn MPy ended and N transistor npn npn MNy conducting, and this moment, the current potential of modulated voltage signal VGG will be via N transistor npn npn MNy and resistance R EThe butt joint ground potential GND is discharged and is reduced, and forms current i (VGH) (shown in solid line among Fig. 6).Afterwards, when the current potential of modulated voltage signal VGG was returned to grid power supply voltage VGH again, current i (VGH) was understood sharply increase and a peak point current occurred.Yet the peak value of current i (VGH) is relevant to prior art relatively and by the big peak point current of dotted lines among Fig. 6, has reduced significantly, and then made that the object of the invention is able to reach.
Need to prove at this; Each output stage of the gate output buffer 214 of each gate signal generation module 21 in the gate driver circuit 20 of the embodiment of the invention is not limited to enabled by the internal displacement data-signal, and it also can adopt other frequency signals to enable.In addition, each gate signal generation module 21 in the gate driver circuit 20 of the embodiment of the invention can be arranged in the single gate drive integrated circult, also can be arranged at least two grid-driving integrated circuits; In other words, the gate driver circuit 20 of the embodiment of the invention comprises single gate drive integrated circult or at least two grid-driving integrated circuits.
In sum; The embodiment of the invention is through dividing into gate driver circuit a plurality of gate signal generation module and making these gate signal generation module all have independently voltage modulation circuit; So that the modulated voltage signal that each gate signal generation module employing different voltages with different modulation circuit provides is as its supply voltage; Therefore the gate driver circuit in the prior art only adopts the circuit design of single voltage modulation circuit (for example PM circuit); Can effectively suppress big peak point current and occur, avoid redundant power loss and/or avoid circuit burnout.
In addition; Any those skilled in the art also can do suitably change to the grid electrode drive circuit structure that the above embodiment of the present invention proposes; For example suitably change the circuit design of control module; Change the quantity of shift cache circuit, and/or the electrical connection of each transistorized source electrode and drain electrode is exchanged or the like.
Though the present invention discloses as above with preferred embodiment; Right its is not that any those skilled in the art are not breaking away from the spirit and scope of the present invention in order to qualification the present invention; When can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim scope person of defining.

Claims (11)

1. gate driver circuit; It is characterized in that; Described gate driver circuit is suitable for receiving an external gate supply voltage and an external control signal, produces a plurality of internal displacement data signal group in regular turn; And export a plurality of signals in regular turn according to said external gate supply voltage, external control signal and internal displacement data signal group, each said internal displacement data signal group comprises a plurality of internal displacement data-signals that produce in regular turn; Said gate driver circuit comprises a plurality of gate signal generation module, and each said gate signal generation module comprises:
One voltage modulation circuit, utilize a corresponding person and said external control signal in the said internal displacement data signal group the said external gate supply voltage that inputs to said voltage modulation circuit is modulated and a modulated voltage signal; And
One gate output buffer, comprise the output stage of a plurality of coupled in parallel, said output stage be enabled in regular turn with said modulated voltage signal output and the part person in the said signal.
2. gate driver circuit as claimed in claim 1 is characterized in that, said gate signal generation module is arranged at single gate and drives in the polar body circuit, drives the polar body circuit so that said gate driver circuit comprises single gate.
3. gate driver circuit as claimed in claim 1 is characterized in that said gate signal generation module is arranged in two grid-driving integrated circuits at least, so that said gate driver circuit comprises at least two grid-driving integrated circuits.
4. gate driver circuit as claimed in claim 1 is characterized in that, said voltage modulation circuit comprises:
One the first transistor, first source/drain electrode of said the first transistor receives said external gate supply voltage because of the electric property coupling relation;
One transistor seconds; First source/drain electrode of said transistor seconds is electrically coupled to a preset potential; Second source/drain electrode of said transistor seconds is electrically coupled to second source/drain electrode of said the first transistor and as the output terminal of said modulated voltage signal, and the grid of said transistor seconds and the grid of said the first transistor be electric property coupling mutually; And
One control module is controlled said first and second transistorized grid voltage to determine said first and second transistorized conduction and cut-off state according to said corresponding person in the said internal displacement data signal group and said external control signal;
Wherein, the conduction and cut-off opposite states of said the first transistor and said transistor seconds.
5. gate driver circuit as claimed in claim 1 is characterized in that, the said output stage of said gate output buffer is enabled through the said corresponding person in the said internal displacement data signal group in regular turn.
6. a gate driver circuit is characterized in that, described gate driver circuit is applied to comprise the LCD of a printed circuit board (PCB), and said printed circuit board (PCB) is in order to provide a grid power supply voltage, a control signal and a preset potential; Said gate driver circuit comprises:
One grid power supply voltage input line is because of the electric property coupling relation receives said grid power supply voltage;
One control signal incoming line is because of the electric property coupling relation receives said control signal;
One preset potential incoming line is electrically coupled to said preset potential;
A plurality of internal displacement data output channel groups; And
A plurality of gate signal generation module, each said gate signal generation module comprises:
One voltage modulation circuit; Be electrically coupled between said grid power supply voltage input line and the said preset potential incoming line and comprise that a plurality of input ends and an output terminal, said input end are electrically coupled to a corresponding person and the said control signal incoming line in the said internal displacement data output channel group; And
One gate output buffer; The said output terminal that is electrically coupled to said voltage modulation circuit is modulated back and a modulated voltage signal that get to receive said voltage modulation circuit to said grid power supply voltage, and said gate output buffer is in order to export a plurality of signals according to said modulated voltage signal in regular turn.
7. gate driver circuit as claimed in claim 6 is characterized in that said gate signal generation module is arranged in the single gate drive integrated circult, so that said gate driver circuit comprises the single gate drive integrated circult.
8. gate driver circuit as claimed in claim 6 is characterized in that said gate signal generation module is arranged in two grid-driving integrated circuits at least, so that said gate driver circuit comprises at least two grid-driving integrated circuits.
9. gate driver circuit as claimed in claim 6 is characterized in that, said voltage modulation circuit comprises:
One first conductivity type of transistor, first source/drain electrode of said first conductivity type of transistor is electrically coupled to said grid power supply voltage input line;
One second conductivity type of transistor; First source/drain electrode of said second conductivity type of transistor is electrically coupled to said preset potential incoming line; Second source/drain electrode of said second conductivity type of transistor is electrically coupled to second source/drain electrode of first conductivity type of transistor and as the said output terminal of said voltage modulation circuit, and the grid of the grid of said second conductivity type of transistor and said first conductivity type of transistor is electric property coupling mutually; And
One control module; With said corresponding person in the said internal displacement data output channel group and said control signal incoming line electric property coupling mutually; In order to control the conduction and cut-off state of said first and second conductivity type of transistor, make the conduction and cut-off opposite states of said first conductivity type of transistor and said second conductivity type of transistor.
10. gate driver circuit as claimed in claim 6; It is characterized in that; Said gate output buffer comprises the output stage of a plurality of coupled in parallel, and said output stage is electrically coupled to a plurality of internal displacement data output channels of the said corresponding person in the said internal displacement data output channel group respectively and is enabled in regular turn and exports said signal.
11. gate driver circuit as claimed in claim 6 is characterized in that, said preset potential incoming line sees through the resistance be arranged on the said printed circuit board (PCB) and said preset potential electric property coupling mutually.
CN2010100006940A 2010-01-15 2010-01-15 Gate driving circuit Active CN101739937B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI418880B (en) * 2010-12-10 2013-12-11 Au Optronics Corp Active liquid crystal display panel
CN105206225B (en) * 2015-10-12 2017-09-01 深圳市华星光电技术有限公司 OLED gate driver circuitry topologies
CN106251803B (en) * 2016-08-17 2020-02-18 深圳市华星光电技术有限公司 Gate driver for display panel, display panel and display

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KR20090002429A (en) * 2007-06-28 2009-01-09 삼성전자주식회사 Gate driver for reducing power consumption and display device having the same
EP2017817A1 (en) * 2007-06-05 2009-01-21 Funai Electric Co., Ltd. Liquid crystal display device and driving method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1400489A (en) * 2001-07-31 2003-03-05 佳能株式会社 Scanning circuit and image display device
CN1534583A (en) * 2003-03-31 2004-10-06 京东方显示器科技公司 Liquid crystal driving device
CN101046940A (en) * 2006-03-28 2007-10-03 统宝光电股份有限公司 Grid drive circuit, liquid crystal display device and electronic device
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