CN211445993U

CN211445993U - Ingot furnace

Info

Publication number: CN211445993U
Application number: CN201922086935.7U
Authority: CN
Inventors: 陈伟; 王全志; 李林东; 唐珊珊; 陈志军
Original assignee: Baotou Ates Sunshine Energy Technology Co ltd; CSI Cells Co Ltd
Current assignee: Baotou Ates Sunshine Energy Technology Co ltd; CSI Cells Co Ltd; CSI Solar Technologies Inc
Priority date: 2019-11-28
Filing date: 2019-11-28
Publication date: 2020-09-08
Anticipated expiration: 2029-11-28

Abstract

The utility model provides an ingot furnace, it includes: the crucible for placing the silicon material, locate crucible backplate all around, locate be used for heating melting of backplate periphery the heater and the lid of silicon material are located the backplate with the apron of crucible top, a plurality of breachs have been seted up to the top edge of backplate, the breach is including locating the edge breach at backplate both sides edge and locating middle part breach between the edge breach. Due to the arrangement, the two side edges of the upper parts of the adjacent guard plates are prevented from forming a closed corner space, so that gas flowing through the corner can be smoothly discharged, and the oxygen content in the silicon melt is reduced.

Description

Ingot furnace

Technical Field

The utility model relates to a photovoltaic cell production field especially relates to an ingot furnace.

Background

The existing silicon ingot for producing the solar cell is generally prepared by adopting an ingot casting process, the ingot casting process is generally realized by a crystalline silicon ingot furnace, and because the ingot casting process is subjected to a heat treatment process from high temperature to low temperature, the service life of minority carriers in a silicon material is reduced due to overhigh oxygen concentration, and the photoelectric conversion efficiency of the solar cell is directly influenced, so that the control of the oxygen content is very critical in the production process of the crystalline silicon.

The position and the width of the air outlet of the guard plate of the ingot furnace play a very critical role in reducing the oxygen content. In the crystalline silicon production process, oxygen element can flow in the cavity that apron and silicon melt surface and backplate and crucible formed along with gas, and the gas that carries oxygen element flows backplate gas outlet position, because the design defect of current backplate structure, has some gas to be the cavity that can discharge, but has some gas motion direction to take place the reversal, carries oxygen element and contacts with the liquid level once more to inside dipping into the silicon melt, cause the increase of oxygen content.

Therefore, it is necessary to design an ingot furnace to solve the above problems.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a ingot furnace that helps reducing crystal silica content.

In order to achieve the above purpose, the utility model adopts the following technical scheme: an ingot furnace, comprising: the crucible for placing the silicon material, locate crucible backplate all around, locate be used for heating melting of backplate periphery the heater and the lid of silicon material are located the backplate with the apron of crucible top, a plurality of breachs have been seted up to the top edge of backplate, the breach is including locating the edge breach at backplate both sides edge and locating middle part breach between the edge breach.

As a further improved technical scheme of the utility model, the width of edge breach is greater than 100 millimeters.

As the utility model discloses further modified technical scheme, the distance between two adjacent breachs is 20 millimeters to 40 millimeters.

As a further improved technical scheme of the utility model, the quantity more than or equal to 2 of middle part breach.

As a further improved technical scheme of the utility model, middle part breach evenly distributed is between two marginal breachs.

As a further improved technical solution of the present invention, the width of the edge gap is greater than the width of the middle gap.

As a further improved technical scheme of the utility model, edge breach and middle part breach are the rectangle.

As the utility model discloses further modified technical scheme, a plurality of mounting holes are vertically seted up to one side of backplate for assemble two adjacent backplates.

According to the technical solution provided by the utility model, the utility model discloses an ingot furnace avoids forming confined bight space between adjacent backplate through set up the breach in the both sides of backplate upper edge for the gas in bight of flowing through can discharge smoothly, and then reduces the oxygen content in the silicon melt.

Drawings

Fig. 1 is a schematic structural diagram of the ingot furnace of the utility model.

Fig. 2 is a schematic structural view of the shield in fig. 1.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in detail with reference to the accompanying drawings and specific embodiments.

Please refer to fig. 1, the utility model provides an ingot furnace, it is including the crucible 2 that is used for placing silicon material 5, locate crucible 2 backplate 1 all around, locate backplate 1 periphery and be used for heating the heater 3 that melts silicon material 5 and cover apron 4 of locating backplate 1 and crucible 2 top, offer the through-hole 41 that is used for letting in protective gas on the apron 4.

Referring to fig. 2, the upper edge of the guard plate 1 is provided with a plurality of notches, convex teeth 13 are arranged between the notches, each notch comprises an edge notch 11 and a middle notch 12, the edge notches 11 are located at two side edges of the guard plate 1, that is, the edge notches 11 are arranged at two corners above the guard plate 1, when two adjacent guard plates 1 are assembled, the two edge notches 11 form an integral notch instead of a closed corner space. The edge gap 11 is preferably rectangular and has a width greater than 100 mm, and in other embodiments, the edge gap may be configured in other shapes as long as the purpose of avoiding the formation of a closed corner space at the upper part of the adjacent cover plate 1 is achieved, and is not limited herein.

The central recesses 12 are located between the two edge recesses 11, preferably in a number of 2 or more and distributed uniformly. The central opening 12 is preferably rectangular, but may be provided in other shapes, and is not limited thereto. The utility model discloses in, the width of edge breach 11 is greater than the width of middle part breach 12. In other embodiments, the size of the edge gap and the size and number of the middle gap may be adjusted according to the actual size of the guard plate, which is not limited herein.

The utility model discloses in, the distance between two adjacent breachs is 20 millimeters to 40 millimeters, and the width of dogtooth 13 is 20 millimeters to 40 millimeters promptly, so sets up, and dogtooth 13 is narrower, has increased gaseous discharge probability to reduce the gaseous proportion of backward flow, reduced the oxygen content in the silicon solution.

A plurality of mounting holes 14 are longitudinally formed in one side of each guard plate 1 and used for assembling two adjacent guard plates 1.

During operation, firstly, protective gas is introduced into the through hole 41 of the cover plate 4, so that gas flow starts from the through hole 41 and flows to the edge notch 11 and the middle notch 12 through the melt liquid level of the silicon material 5, wherein the edge notches 11 of two adjacent guard plates 1 form an integral notch at the corner instead of a closed corner, so that the gas flowing to the corner can be smoothly discharged. In addition, because the gap between the notches (namely the width of the convex teeth 13) is smaller than the width of the convex teeth of the conventional guard plate, the gas flowing to the middle notch 12 can be smoothly discharged, the probability of gas backflow and lingering between the guard plate 1 and the liquid level of the silicon material 5 is reduced, and the function of increasing side exhaust is achieved.

To sum up, the ingot furnace of the utility model avoids the formation of a closed corner space between adjacent guard plates by forming edge gaps at the two side edges of the upper edge of the guard plate, so that the gas flowing through the corner can be smoothly discharged, and further the oxygen content in the silicon material melt is reduced; in addition, the width of the convex teeth is reduced, so that the discharge probability of gas at the side part is increased, the proportion of backflow gas is reduced, and the oxygen content in the silicon material melt is further reduced; additionally, the utility model discloses a backplate simple structure, low cost.

Terms such as "upper", "side", and the like, used herein to denote relative spatial positions, are used herein for ease of description to describe one feature's relationship to another feature as illustrated in the figures. It will be understood that the spatially relative positional terms may be intended to encompass different orientations than those shown in the figures depending on the product presentation position and should not be construed as limiting the claims.

In addition, the above embodiments are only used for illustrating the present invention and not for limiting the technical solutions described in the present invention, and the understanding of the present specification should be based on the technical personnel in the technical field, and although the present specification has described the present invention in detail with reference to the above embodiments, the person of ordinary skill in the art should understand that the person of ordinary skill in the art can still modify the present invention or substitute the same, and all the technical solutions and modifications that do not depart from the spirit and scope of the present invention should be covered within the scope of the claims of the present invention.

Claims

1. An ingot furnace, comprising: the crucible for placing the silicon material, locate crucible backplate all around, locate backplate periphery be used for heating and melting the heater and the lid of silicon material are located the backplate with the apron of crucible top, its characterized in that: a plurality of gaps are formed in the upper edge of the guard plate, and each gap comprises edge gaps arranged on the edges of the two sides of the guard plate and a middle gap arranged between the edge gaps.

2. The ingot furnace of claim 1, wherein: the width of the edge gap is greater than 100 mm.

3. The ingot furnace of claim 1, wherein: the distance between two adjacent notches is 20 mm to 40 mm.

4. The ingot furnace of claim 1, wherein: the number of the middle gaps is more than or equal to 2.

5. The ingot furnace of claim 1, wherein: the middle gaps are uniformly distributed between the two edge gaps.

6. The ingot furnace of claim 1, wherein: the width of the edge gap is greater than the width of the middle gap.

7. The ingot furnace of claim 1, wherein: the edge gap and the middle gap are rectangular.

8. The ingot furnace of claim 1, wherein: and a plurality of mounting holes are longitudinally formed in one side of each guard plate and used for assembling two adjacent guard plates.