CN220265934U - Heat shield device and thermal field for single crystal furnace - Google Patents
Heat shield device and thermal field for single crystal furnace Download PDFInfo
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- CN220265934U CN220265934U CN202321662683.8U CN202321662683U CN220265934U CN 220265934 U CN220265934 U CN 220265934U CN 202321662683 U CN202321662683 U CN 202321662683U CN 220265934 U CN220265934 U CN 220265934U
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- 239000013078 crystal Substances 0.000 title claims abstract description 59
- 230000000149 penetrating effect Effects 0.000 claims abstract description 10
- 238000009413 insulation Methods 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 description 33
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 238000000034 method Methods 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000010453 quartz Substances 0.000 description 10
- 230000005855 radiation Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000009423 ventilation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000004321 preservation Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The embodiment of the utility model provides a heat shield device and a heat field for a single crystal furnace, wherein the heat shield device comprises: the heat shield body is provided with a through hole for penetrating the crystal bar, wherein a first airflow channel communicated along the radial direction of the through hole is formed at the bottom of the heat shield body, and an air inlet of the first airflow channel is communicated with the through hole; the protruding structure sets up in the bottom of heat shield body, and protruding structure extends along the axial of through-hole, and protruding structure encircles the through-hole setting. Can improve the crystal pulling stability and the growth speed of the crystal bar.
Description
Technical Field
The utility model relates to the technical field of crystal pulling, in particular to a heat shield device and a thermal field for a single crystal furnace.
Background
Silicon single crystals are becoming important widely in all countries of the world as an irreplaceable key material in the high-tech fields of microelectronics, photovoltaics, communication, aerospace and the like, and are becoming a basic material for the sustainable development of modern information technology, and many technologies and products derived from the silicon single crystals are being integrated into aspects of life. Moreover, monocrystalline silicon is the most important material for photovoltaic power generation, has high photoelectric conversion efficiency, and occupies a large specific gravity in the field of green energy.
At present, as the normal flow of argon is required to be ensured to take away volatile matters on the surface of the silicon liquid in the crystal pulling process, a certain distance, namely a liquid opening distance, between the bottom of the heat shield and the surface of the silicon liquid is required to be ensured. However, the existence of the liquid gap easily causes the silicon liquid and the heater to directly radiate heat to the crystal bar above the solid-liquid interface, so that the temperature of the crystal bar above the solid-liquid interface is increased, the longitudinal temperature gradient is reduced, and the growth speed of the crystal bar is reduced.
Disclosure of Invention
In view of the foregoing, embodiments of the present utility model have been developed to provide a thermal shield apparatus and thermal field for a single crystal furnace that overcome, or at least partially solve, the foregoing problems.
In order to solve the above problems, an embodiment of the present utility model discloses a heat shield apparatus, including: the heat shield body is provided with a through hole for penetrating the crystal bar, wherein,
a first airflow channel communicated with the second through hole along the radial direction is formed at the bottom of the heat shield body, and an air inlet of the first airflow channel is communicated with the through hole;
the protruding structure set up in the bottom of heat shield body, protruding structure extends along the axial of through-hole, protruding structure encircles the through-hole sets up.
Optionally, the raised structure includes a plurality of first raised portions and a plurality of second raised portions;
the first protruding part and the second protruding part are arranged at intervals along the radial direction of the through hole, and the first protruding part is arranged close to the circle center of the through hole;
the first protruding portions are arranged at intervals along the circumferential direction of the through hole, the second protruding portions are arranged at intervals along the circumferential direction of the through hole, and the first protruding portions and the second protruding portions are alternately arranged along the circumferential direction of the through hole.
Optionally, the cross-sectional shape of the first protrusion along the radial direction of the through hole includes: at least one of rectangular, triangular, elliptical, circular, and trapezoidal;
the second boss has a sectional shape along a radial direction of the through hole including: at least one of rectangular, triangular, elliptical, circular, and trapezoidal.
Optionally, the plurality of first protrusions are uniformly distributed along the circumferential direction of the through hole;
the second protrusions are uniformly distributed along the circumferential direction of the through hole.
Optionally, the protruding structure is a ring.
Optionally, the ring member is provided with a vent hole communicated along the radial direction of the through hole.
Optionally, the two second protruding parts adjacently arranged include a first sub-protruding part and a second sub-protruding part, and the first protruding part opposite to a gap between the first sub-protruding part and the second sub-protruding part is a third sub-protruding part;
the third sub-protrusion includes a first end and a second end along a circumferential direction of the through hole;
the first end part and the circle center of the through hole can be connected and extend to form a first straight line, the second end part and the circle center of the through hole can be connected and extend to form a second straight line, the first sub-protruding part is intersected with the first straight line, and the second sub-protruding part is intersected with the second straight line.
Optionally, the protruding structure further comprises a plurality of connecting parts;
the connecting parts, the first sub-protruding parts and the third sub-protruding parts are arranged in a one-to-one correspondence manner, and the connecting parts are arranged between the corresponding first sub-protruding parts and the corresponding third sub-protruding parts;
one end of the connecting part is connected with the corresponding first sub-protruding part, and the other end of the connecting part is connected with the corresponding third sub-protruding part to form a heat insulating piece;
and a second airflow channel is formed between two adjacent heat insulation pieces along the circumferential direction of the through hole.
Optionally, the openings of the second airflow channels are sequentially increased along the direction away from the center of the through hole.
Optionally, the heat insulating member is an integrally formed structure.
Optionally, the cross-sectional shape of the heat insulator along the radial direction of the through hole includes: at least one of zigzag, arc, triangle, trapezoid and rectangle.
Optionally, the first air flow channel includes a plurality of through holes;
the plurality of penetrating holes are arranged at intervals along the circumferential direction of the through hole;
the through hole is formed in the heat shield body, the heat shield body is conducted along the radial direction of the through hole, and one end of the through hole is communicated with the through hole.
Optionally, the heat shield body comprises a first heat shield body and a second heat shield body, a first through hole is formed in the first heat shield body, a second through hole is formed in the second heat shield body, and the second through hole and the first through hole are opposite and combined to form the through hole;
the first heat shield body and the second heat shield body are arranged at intervals along the axial direction of the through hole, and a gap between the first heat shield body and the second heat shield body forms the first air flow channel;
the protruding structure is arranged on one side, away from the first heat shield body, of the second heat shield body.
Optionally, the air inlet and the air outlet included in the first air flow channel are arranged in a staggered manner along the axial direction of the through hole.
In a second aspect, the embodiment of the utility model also discloses a thermal field for the single crystal furnace, which comprises the single crystal furnace and the thermal shield device;
the heat shield device is arranged in the single crystal furnace.
The embodiment of the utility model has the following advantages:
in the embodiment of the utility model, the bottom of the heat shield body can form the first air flow channel which is conducted along the radial direction of the through hole, so that argon can flow through the first air flow channel to take away volatile matters on the surface of the silicon liquid in the process of drawing the crystal rod, and the crystal pulling stability is improved. The protruding structure is arranged at the bottom of the heat shield body, extends along the axial direction of the through hole and surrounds the through hole, so that the protruding structure can be close to a solid-liquid interface, the liquid port distance is reduced, the protruding structure can block heat radiation of silicon liquid and the heater, the temperature of a crystal bar above the solid-liquid interface is reduced, the longitudinal temperature gradient is increased, and the growth speed of the crystal bar is increased.
Drawings
FIG. 1 is a schematic diagram of a thermal field for a single crystal furnace according to an embodiment of the present utility model;
FIG. 2 is an enlarged schematic view of the structure at A in FIG. 1 according to an embodiment of the present utility model;
FIG. 3 is a schematic view of a part of a heat shield apparatus in an embodiment of the present utility model;
FIG. 4 is a schematic cross-sectional view of the embodiment of the present utility model shown in FIG. 3 along the direction of the arrow;
FIG. 5 is an enlarged schematic view of the structure of FIG. 4B according to the embodiment of the present utility model;
FIG. 6 is a view of the heat shield apparatus of FIG. 3 in a certain orientation in accordance with an embodiment of the present utility model;
FIG. 7 is a schematic view of a part of another heat shield apparatus of the present utility model;
FIG. 8 is a schematic cross-sectional view of FIG. 7 along the direction of the arrow in accordance with an embodiment of the present utility model;
FIG. 9 is an enlarged schematic view of the structure of FIG. 8C according to the embodiment of the present utility model;
FIG. 10 is a schematic view of a portion of a heat shield apparatus in accordance with another embodiment of the present utility model;
FIG. 11 is a schematic cross-sectional view of the embodiment of the present utility model in the direction of the arrow in FIG. 10;
FIG. 12 is an enlarged schematic view of the structure of FIG. 11D according to the embodiment of the present utility model;
fig. 13 is a view of the heat shield apparatus of fig. 10 in a certain direction according to an embodiment of the present utility model.
Reference numerals illustrate:
the heat shield comprises a 1-heat shield body, a 11-first heat shield body, a 12-second heat shield body, a 13-through hole, a 3-protruding structure, a 31-first protruding part, a 32-second protruding part, a 33-first sub-protruding part, a 34-second sub-protruding part, a 35-third sub-protruding part, a 36-heat insulating piece, a 4-first air flow channel, a 100-heat shield device, a 200-heat exchanger, a 300-crystal bar, a 400-heater, a 500-quartz crucible, a 600-silicon liquid and a 700-single crystal furnace.
Detailed Description
In order that the above-recited objects, features and advantages of the present utility model will become more readily apparent, a more particular description of the utility model will be rendered by reference to the appended drawings and appended detailed description.
The features of the terms "first", "second", and the like in the description and in the claims of this application may be used for descriptive or implicit inclusion of one or more such features. In the description of the present utility model, unless otherwise indicated, the meaning of "a plurality" is two or more. Furthermore, in the description and claims, "and/or" means at least one of the connected objects, and the character "/", generally means that the associated object is an "or" relationship.
In the description of the present utility model, it should be understood that the terms "longitudinal," "length," "width," "thickness," "upper," "lower," "top," "bottom," "inner," "outer," "axial," "radial," "circumferential," and the like indicate or are based on the orientation or positional relationship shown in the drawings, merely to facilitate describing the present utility model and simplify the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be configured and operated in a particular orientation, and thus should not be construed as limiting the present utility model.
In the description of the present utility model, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.
One of the core ideas of the embodiments of the present utility model is to disclose a heat shield apparatus.
Referring to fig. 1 and 2, the heat shield apparatus may include: the heat shield body 1 and the protruding structure 3, the bottom of the heat shield body 1 may be formed with a first air flow channel 4 conducted along the radial direction of the through hole 13, and an air inlet of the first air flow channel 4 may be communicated with the through hole 13; the protruding structure 3 may be disposed at the bottom of the heat shield body 1, the protruding structure 3 may extend along the axial direction of the through hole 13, and the protruding structure 3 may be disposed around the through hole 13.
In the embodiment of the present utility model, the bottom of the heat shield body 1 may form the first air flow channel 4 that is conducted along the radial direction of the through hole 13, so that during the process of drawing the ingot 300, argon gas may flow through the first air flow channel 4 to remove the volatile matters on the surface of the silicon liquid 600, thereby improving the crystal pulling stability. The protruding structure 3 is arranged at the bottom of the heat shield body 1, extends along the axial direction of the through hole 13 and surrounds the through hole 13, so that the protruding structure 3 can be close to a solid-liquid interface, the liquid gap is reduced, the protruding structure 3 can block heat radiation of the silicon liquid 600 and the heater 400, the temperature of the crystal bar 300 above the solid-liquid interface is reduced, the longitudinal temperature gradient is increased, and the growth speed of the crystal bar 300 is increased.
The heat shield device 100 in the embodiment of the utility model can be an important component in the thermal field of the single crystal furnace, and plays a role in preserving heat, insulating heat and stabilizing the temperature field in the single crystal furnace 700, and meanwhile, the heat shield device 100 can also improve the trend of the air flow in the single crystal furnace 700 and reduce the radiation of the heat of the heater 400 to the crystal bar 300.
In particular, the heat shield apparatus 100 may include an inner shield and an outer shield; the outer screen can be sleeved outside the inner screen to protect the inner screen, and a heat preservation layer can be arranged between the inner screen and the outer screen; in the case of applying the heat shield apparatus 100 to a thermal field of a single crystal furnace, as shown in fig. 1, both the heat shield apparatus 100 and the heat exchanger 200 may be disposed above the quartz crucible 500; the heat exchanger 200 may be disposed around the ingot 300 to cool the ingot 300 above the quartz crucible 500, increasing the temperature gradient of the ingot 300 along the axial direction thereof; the inner screen of the heat screen device 100 may be sleeved outside the heat exchanger 200 to perform the functions of heat preservation and heat insulation.
Specifically, the protrusion structure 3 is disposed around the through hole 13 such that the protrusion structure 3 can block heat radiation to the ingot 300 above the solid-liquid interface to increase the temperature gradient of the ingot 300 in the axial direction thereof, thereby increasing the pulling rate of the ingot 300.
Specifically, the material of the protruding structure 3 may be graphite or carbon to improve the heat insulation effect of the protruding structure 3.
Optionally, the air inlet and the air outlet of the first air flow channel 4 may be arranged along the axial direction of the through hole 13 in a staggered manner, so that the heat shield body 1 may block the heat radiation of the silicon solution 600 and the heater 400, so as to avoid the heat radiation of the silicon solution 600 and the heater 400 from directly radiating from the first air flow channel 4 to the ingot 300 above the solid-liquid interface, so that the temperature of the ingot 300 above the solid-liquid interface is reduced, and the temperature gradient of the ingot 300 along the axial direction thereof may be improved, thereby improving the pulling speed of the ingot 300.
Specifically, both ends of the first air flow channel 4 in the radial direction of the through hole 13 are respectively provided with an air inlet and an air outlet; the air inlet can be arranged on the inner wall of the outer screen; the air outlet can be arranged on the outer wall of the outer screen.
Alternatively, referring to fig. 1 and 2, the heat shield body 1 may include a first heat shield body 11 and a second heat shield body 12, the first heat shield body 11 being provided with a first through hole, the second heat shield body 12 being provided with a second through hole, the second through hole and the first through hole being opposite and combined to form a through hole 13; the first heat shield body 11 and the second heat shield body 12 may be disposed at intervals along the axial direction of the through hole 13, and a gap between the first heat shield body 11 and the second heat shield body 12 may form the first air flow channel 4; the protruding structure 3 may be arranged at a side of the second heat shield body 12 facing away from the first heat shield body 11.
In the embodiment of the utility model, the first heat shield body 11 and the second heat shield body 12 are arranged at intervals along the axial direction of the second through hole, so that the gap between the first heat shield body 11 and the second heat shield body 12 can form the first air flow channel 4, and the speed of air flow can be increased.
Specifically, the outer screen may include a first heat screen body 11, a second heat screen body 12, and a protrusion structure 3; the first heat shield body 11 is provided with a first through hole, the second heat shield body 12 is provided with a second through hole, and the first through hole is opposite to the second through hole and can be used for sleeving an inner shield.
Specifically, the first heat shield body 11 and the second heat shield body 12 are arranged along the axial direction of the through hole 13 at intervals, the protruding structure 3 is arranged on one side, far away from the first heat shield body 11, of the second heat shield body 12, and as shown in fig. 1, the first heat shield body 11, the second heat shield body 12 and the protruding structure 3 are sequentially arranged from top to bottom.
Specifically, the first heat shield body 11 and the second heat shield body 12 may be fixed by screws or bolts; a gap is formed between the first heat shield body 11 and the second heat shield body 12 along the axial direction of the through hole 13, and the gap can form a first air flow channel 4 so as to ventilate by using the first air flow channel 4, take away volatile matters in the crystal pulling process and keep the molten silicon level stable.
Specifically, the first heat shield body 11 has a first length along the axial direction of the through hole 13, and the second heat shield body 12 has a second length along the axial direction of the through hole 13, and the first length may be greater than, equal to, or less than the second length, preferably, the first length is greater than the second length, so that the first air flow passage 4 is disposed near the bottom of the outer shield.
Specifically, the protruding structure 3 may be fixed on the side of the second heat shield body 12 away from the first heat shield body 11 by bolting, bonding, welding, or the like, or the protruding structure 3 may be integrally formed with the second heat shield body 12.
Alternatively, the first heat shield body 11 may include a vertical portion and an arc portion; the arc-shaped part can be arranged between the vertical part and the second heat shield body 12, and the vertical part and the second heat shield body 12 are arranged at intervals along the axial direction of the through hole 13 and form a first air flow channel 4; the vertical part and the arc part can be buckled and connected or integrally formed.
Specifically, the vertical portion may be a ring-shaped structure. The end of the vertical portion remote from the arc portion may be further provided with a protruding edge to fix the heat shield apparatus 100 by the protruding edge.
Alternatively, the arc portion may be provided as an inclined wall, which is not particularly limited in the embodiment of the present utility model.
Alternatively, the first air flow channel 4 may comprise a plurality of through holes; the plurality of penetrating holes may be arranged at intervals along the circumferential direction of the through hole 13; the penetrating hole can be formed in the heat shield body 1 and communicated with the through hole 13 along the radial direction of the through hole 13, and one end of the penetrating hole is communicated with the through hole 13.
In the embodiment of the utility model, a plurality of penetrating holes which are communicated along the radial direction of the through hole 13 are formed on the heat shield body 1 so as to ventilate through the penetrating holes, thereby improving the structural stability of the heat shield body 1.
Optionally, if the bottom of the heat shield body 1 is in an arc structure, the through hole may be formed on the arc structure; if the bottom of the heat shield body 1 is of an inclined wall structure, the through holes can be formed in the inclined wall structure, and of course, the heat shield body can also be formed in other parts of the outer shield. Or, the through holes can be formed on the outer screen, the corresponding inner screen can also be provided with air holes, the air holes and the through holes can be opposite and communicated, and further, the air holes and the air holes can be communicated through pipelines, and the through holes and the air holes can be particularly arranged according to actual requirements, so that the embodiment of the utility model is not particularly limited.
Specifically, the size and number of the through holes may be set according to actual requirements, which is not particularly limited in the embodiment of the present utility model.
Alternatively, as shown in fig. 7, 8 and 9, the protruding structure 3 may be an annular member, and since the protruding structure 3 is disposed around the through hole 13, the protruding structure 3 may block the heat radiated from the heater 400, prevent the heat from being directly radiated to the ingot 300 above the quartz crucible 500, and improve the axial temperature gradient of the ingot 300.
Further, the ring member may be provided with vent holes which are conducted in the radial direction of the through hole 13, so that the vent holes can also exhaust gas, and the reliability of gas flow and crystal pulling stability can be further improved.
Specifically, the plurality of ventilation holes may be provided at intervals in the circumferential direction of the ring member, and preferably, the plurality of ventilation holes may be provided at uniform intervals in the circumferential direction of the ring member.
Specifically, the number and size of the ventilation holes may be specifically set according to actual requirements, which is not specifically limited in the embodiment of the present utility model.
In other alternative embodiments of the present utility model, as shown in fig. 6 and 13, the bump structure 3 may include a plurality of first bumps 31 and a plurality of second bumps 32; the first protruding part 31 and the second protruding part 32 may be disposed at intervals along the radial direction of the through hole 13, and the first protruding part 31 may be disposed near the center of the through hole 13; the plurality of first protrusions 31 are disposed at intervals along the circumferential direction of the through hole 13, and the plurality of second protrusions 32 are disposed at intervals along the circumferential direction of the through hole 13, wherein the first protrusions 31 and the second protrusions 32 are alternately disposed along the circumferential direction of the through hole 13.
In the embodiment of the present utility model, the first protruding portions 31 and the second protruding portions 32 are disposed at intervals along the radial direction of the through hole 13, and the first protruding portions 31 are disposed near the center of the through hole 13, so that the plurality of second protruding portions 32 may be disposed around the plurality of first protruding portions 31. Since the first and second protrusions 31 and 32 are alternately arranged in the circumferential direction of the through hole 13, an air flow passage may be formed between the first and second protrusions 31 and 32, and the first and second protrusions 31 and 32 may also function as a heat radiation blocking effect.
Specifically, a portion of the gas may flow through the first gas flow channel 4, and a portion of the gas may flow through the gap between the first protrusion 31 and the second protrusion 32, so as to further reduce the blowing of the gas to the liquid surface near the ingot 300, and improve the crystal pulling stability.
Alternatively, as shown in fig. 3, two second protrusions 32 disposed adjacently may include a first sub-protrusion 33 and a second sub-protrusion 34, and the first protrusion 31 opposite to the gap between the first sub-protrusion 33 and the second sub-protrusion 34 is a third sub-protrusion 35; the third sub-boss 35 includes a first end and a second end in the circumferential direction of the through-hole 13; the first end portion may be connected to and extend from the center of the through hole 13 to form a first straight line, the second end portion may be connected to and extend from the center of the through hole 13 to form a second straight line, the first sub-protrusion 33 may intersect the first straight line, and the second sub-protrusion 34 may intersect the second straight line.
In the embodiment of the present utility model, the first sub-protrusion 33 intersects the first straight line, and the second sub-protrusion 34 intersects the second straight line, so that the heat radiation in the circumferential direction of the ingot 300 can be blocked under the combined action of the first protrusion 31 and the second protrusion 32 to reduce the temperature of the ingot 300.
Optionally, the protruding structure 3 may further comprise a plurality of connection portions; the connecting parts, the first sub-convex parts 33 and the third sub-convex parts 35 are arranged in a one-to-one correspondence, and the connecting parts can be arranged between the corresponding first sub-convex parts 33 and the third sub-convex parts 35; one end of the connection part may be connected with the corresponding first sub-protrusion 33, and the other end of the connection part may be connected with the corresponding third sub-protrusion 35 to form the heat insulating member 36; wherein a second air flow passage may be formed between adjacent two of the heat insulators 36 along the circumferential direction of the through hole 13.
In the embodiment of the present utility model, the connection parts are respectively connected with the corresponding first sub-protrusion 33 and third sub-protrusion 35, so that the heat insulation member 36 can be formed, and the heat insulation effect of the protrusion structure 3 can be further improved. Moreover, a second air flow path may be formed between each adjacent two of the insulating members 36 to facilitate air flow.
Alternatively, the openings of the second air flow passages may be sequentially increased in a direction away from the center of the through hole 13.
In the embodiment of the present utility model, the openings of the second air flow channels are sequentially increased along the direction away from the center of the through hole 13, so that the second air flow channels have a guiding effect, and the air is conveniently discharged out of the heat shield device 100 through the second air flow channels.
Alternatively, the heat insulating member 36 may be an integrally formed structure to improve the connection stability between the first sub-protrusion 33, the connection portion, and the third sub-protrusion 35.
Alternatively, one end of the connection part may be fixed to the first sub-protrusion 33 by bolting, welding or bonding, and the other end of the connection part may be fixed to the third sub-protrusion 35 by bolting, welding or bonding.
Optionally, the cross-sectional shape of the heat insulator 36 along the radial direction of the through hole 13 includes: at least one of zigzagged, curved, triangular, trapezoidal, rectangular, may enhance the structural versatility of the insulating member 36.
In still other alternative embodiments of the present utility model, the cross-sectional shape of the first boss 31 in the radial direction of the through-hole 13 may include: at least one of rectangular, triangular, elliptical, circular, and trapezoidal to improve structural diversity of the first protruding portion 31. As shown in fig. 10, there is shown a case where the first boss 31 has an elliptical cross-sectional shape in the radial direction of the through hole 13; as shown in fig. 3, a case is shown in which the cross-sectional shape of the first boss 31 in the radial direction of the through hole 13 is triangular.
Alternatively, the sectional shape of the second boss 32 in the radial direction of the through hole 13 includes: at least one of rectangular, triangular, elliptical, circular, and trapezoidal to improve structural diversity of the second boss 32. As shown in fig. 10 to 12, there is shown a case where the cross-sectional shape of the second boss 32 in the radial direction of the through hole 13 is elliptical; as shown in fig. 3 to 5, a case is shown in which the cross-sectional shape of the second boss 32 in the radial direction of the through hole 13 is triangular.
Alternatively, the plurality of first protrusions 31 may be uniformly distributed along the circumferential direction of the through hole 13; the plurality of second protrusions 32 are uniformly distributed along the circumferential direction of the through hole 13.
In the embodiment of the present utility model, the plurality of first protruding portions 31 and the plurality of second protruding portions 32 are uniformly distributed along the circumferential direction of the through hole 13, so that the protruding structure 3 may be a central symmetrical structure, and the structural stability of the heat shield device 100 may be improved.
The heat shield device provided by the embodiment of the utility model at least comprises the following advantages:
in the embodiment of the utility model, the bottom of the heat shield body can form the first air flow channel which is conducted along the radial direction of the second through hole, so that in the process of drawing the crystal bar, the argon can flow through the first air flow channel to take away the volatile matters on the surface of the silicon liquid, and the crystal pulling stability is improved. The protruding structure is arranged at the bottom of the heat shield body, extends along the axial direction of the through hole and surrounds the through hole, so that the protruding structure can be close to a solid-liquid interface, the liquid port distance is reduced, the protruding structure can block heat radiation of silicon liquid and the heater, the temperature of a crystal bar above the solid-liquid interface is reduced, the longitudinal temperature gradient is increased, and the growth speed of the crystal bar is increased.
In a second aspect, the embodiment of the utility model also discloses a thermal field for a single crystal furnace, which may include the single crystal furnace 700 and the heat shield device 100; the heat shield apparatus 100 may be disposed within a single crystal furnace 700.
Specifically, the thermal field for a single crystal furnace may further include a quartz crucible 500, a heater 400, and a heat exchanger 200 disposed in the single crystal furnace 700; the heater 400 is disposed around the quartz crucible 500, and can heat the quartz crucible 500 to melt the silicon material in the quartz crucible 500, thereby realizing pulling of the ingot 300; the heat exchanger 200 may be disposed above the quartz crucible 500 to cool the crystal bar 300 above the solid-liquid interface, so as to increase the temperature gradient of the crystal bar 300 along the axial direction thereof, thereby increasing the growth rate of the crystal bar 300; the heat shield device 100 is arranged above the quartz crucible 500 and is sleeved outside the heat exchanger 200 to play a role in heat preservation and ventilation.
The thermal field for the single crystal furnace provided by the embodiment of the utility model at least comprises the following advantages:
in the embodiment of the utility model, the bottom of the heat shield body can form the first air flow channel which is conducted along the radial direction of the second through hole, so that in the process of drawing the crystal bar, the argon can flow through the first air flow channel to take away the volatile matters on the surface of the silicon liquid, and the crystal pulling stability is improved. The protruding structure is arranged at the bottom of the heat shield body, extends along the axial direction of the through hole and surrounds the through hole, so that the protruding structure can be close to a solid-liquid interface, the liquid port distance is reduced, the protruding structure can block heat radiation of silicon liquid and the heater, the temperature of a crystal bar above the solid-liquid interface is reduced, the longitudinal temperature gradient is increased, and the growth speed of the crystal bar is increased.
While preferred embodiments of the present utility model have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the scope of the embodiments of the utility model.
Finally, it is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article or terminal device comprising the element.
The heat shield device and the thermal field for the single crystal furnace provided by the utility model are described in detail, and specific examples are applied to the description of the principle and the implementation mode of the utility model, and the description of the examples is only used for helping to understand the method and the core idea of the utility model; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present utility model, the present description should not be construed as limiting the present utility model in view of the above.
Claims (15)
1. A heat shield apparatus, comprising: the heat shield body is provided with a through hole for penetrating the crystal bar, wherein,
a first airflow channel communicated with the through hole along the radial direction is formed at the bottom of the heat shield body, and an air inlet of the first airflow channel is communicated with the through hole;
the protruding structure set up in the bottom of heat shield body, protruding structure is followed the axial extension of through-hole, protruding structure encircles the through-hole sets up.
2. The heat shield arrangement of claim 1, wherein the raised structure comprises a plurality of first raised portions and a plurality of second raised portions;
the first protruding part and the second protruding part are arranged at intervals along the radial direction of the through hole, and the first protruding part is arranged close to the circle center of the through hole;
the first protruding portions are arranged at intervals along the circumferential direction of the through hole, the second protruding portions are arranged at intervals along the circumferential direction of the through hole, and the first protruding portions and the second protruding portions are alternately arranged along the circumferential direction of the through hole.
3. The heat shield apparatus according to claim 2, wherein a sectional shape of the first boss in a radial direction of the through hole includes: at least one of rectangular, triangular, elliptical, circular, and trapezoidal;
the second boss has a sectional shape along a radial direction of the through hole including: at least one of rectangular, triangular, elliptical, circular, and trapezoidal.
4. The heat shield device according to claim 2, wherein a plurality of the first protrusions are uniformly distributed along a circumferential direction of the through hole;
the second protrusions are uniformly distributed along the circumferential direction of the through hole.
5. The heat shield arrangement of claim 1, wherein the raised structure is a ring-shaped member.
6. The heat shield apparatus according to claim 5, wherein the ring member is provided with vent holes communicated in a radial direction of the through hole.
7. The heat shield arrangement of claim 2, wherein two of the second bosses disposed adjacently include a first sub-boss and a second sub-boss, the first boss opposing a gap between the first sub-boss and the second sub-boss being a third sub-boss;
the third sub-protrusion includes a first end and a second end along a circumferential direction of the through hole;
the first end part and the circle center of the through hole can be connected and extend to form a first straight line, the second end part and the circle center of the through hole can be connected and extend to form a second straight line, the first sub-protruding part is intersected with the first straight line, and the second sub-protruding part is intersected with the second straight line.
8. The heat shield arrangement of claim 7, wherein the raised structure further comprises a plurality of connection portions;
the connecting parts, the first sub-protruding parts and the third sub-protruding parts are arranged in a one-to-one correspondence manner, and the connecting parts are arranged between the corresponding first sub-protruding parts and the corresponding third sub-protruding parts;
one end of the connecting part is connected with the corresponding first sub-protruding part, and the other end of the connecting part is connected with the corresponding third sub-protruding part to form a heat insulating piece;
and a second airflow channel is formed between two adjacent heat insulation pieces along the circumferential direction of the through hole.
9. The heat shield apparatus according to claim 8, wherein the opening size of the second air flow passage sequentially increases in a direction away from the center of the through hole.
10. The heat shield arrangement of claim 8, wherein the thermal shield is of unitary construction.
11. The heat shield apparatus of claim 8, wherein a cross-sectional shape of the heat shield along a radial direction of the through hole comprises: at least one of zigzag, arc, triangle, trapezoid and rectangle.
12. The heat shield apparatus of claim 1, wherein the first air flow channel comprises a plurality of perforations;
the plurality of penetrating holes are arranged at intervals along the circumferential direction of the through hole;
the through hole is formed in the heat shield body, the heat shield body is conducted along the radial direction of the through hole, and one end of the through hole is communicated with the through hole.
13. The heat shield device of claim 1, wherein the heat shield body comprises a first heat shield body and a second heat shield body, the first heat shield body is provided with a first through hole, the second heat shield body is provided with a second through hole, and the second through hole and the first through hole are opposite and combined to form the through hole;
the first heat shield body and the second heat shield body are arranged at intervals along the axial direction of the through hole, and a gap between the first heat shield body and the second heat shield body forms the first air flow channel;
the protruding structure is arranged on one side, away from the first heat shield body, of the second heat shield body.
14. The heat shield arrangement of claim 1, wherein the first air flow channel includes an air inlet and an air outlet that are offset along an axial direction of the through hole.
15. A thermal field for a single crystal furnace, comprising the single crystal furnace and the thermal shield device of any one of claims 1-14;
the heat shield device is arranged in the single crystal furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321662683.8U CN220265934U (en) | 2023-06-28 | 2023-06-28 | Heat shield device and thermal field for single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321662683.8U CN220265934U (en) | 2023-06-28 | 2023-06-28 | Heat shield device and thermal field for single crystal furnace |
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| Publication Number | Publication Date |
|---|---|
| CN220265934U true CN220265934U (en) | 2023-12-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321662683.8U Active CN220265934U (en) | 2023-06-28 | 2023-06-28 | Heat shield device and thermal field for single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220265934U (en) |
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2023
- 2023-06-28 CN CN202321662683.8U patent/CN220265934U/en active Active
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