CN211404511U - All-solid-state photon enhanced thermionic emission photoelectric conversion device with nano spacer layer - Google Patents
All-solid-state photon enhanced thermionic emission photoelectric conversion device with nano spacer layer Download PDFInfo
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- CN211404511U CN211404511U CN201922414792.8U CN201922414792U CN211404511U CN 211404511 U CN211404511 U CN 211404511U CN 201922414792 U CN201922414792 U CN 201922414792U CN 211404511 U CN211404511 U CN 211404511U
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- 125000006850 spacer group Chemical group 0.000 title description 6
- 238000010521 absorption reaction Methods 0.000 claims abstract description 126
- 230000004888 barrier function Effects 0.000 claims abstract description 72
- 239000000463 material Substances 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 239000011159 matrix material Substances 0.000 claims abstract description 10
- 239000007769 metal material Substances 0.000 claims abstract description 7
- 239000002918 waste heat Substances 0.000 claims description 6
- 239000002052 molecular layer Substances 0.000 claims 3
- 230000000694 effects Effects 0.000 description 14
- 230000003014 reinforcing effect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 5
- 238000005036 potential barrier Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000000651 laser trapping Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
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- 239000002131 composite material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
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Abstract
The utility model belongs to a photon-enhanced thermionic emission photoelectric conversion device, which aims to solve the problem that when the photon-enhanced thermionic emission device with a vacuum structure works at high temperature, the working life and the conversion efficiency can be reduced, and provides an all-solid-state photon-enhanced thermionic emission photoelectric conversion device with a nanometer spacing layer, which comprises an absorption layer, a barrier layer and an electrode layer; the absorption layer comprises a first rectangular absorption part, a plurality of second absorption parts are arranged on the side surface of the first absorption part facing the electrode layer, and the second absorption parts are arranged in a matrix shape; each second absorption part is connected with the electrode layer through a barrier layer, and the barrier layer corresponds to the second absorption parts in arrangement; the absorption layer is made of a P-type doped semiconductor material with the forbidden band width of 0.8-2.1eV, the barrier layer is made of a semiconductor material with the forbidden band width larger than that of the absorption layer, the conduction band energy difference at the heterojunction interface of the absorption layer and the barrier layer is smaller than the valence band energy difference, the electrode layer is made of a metal material, and the photoelectric conversion device can be assembled by a series-like structure.
Description
Technical Field
The utility model belongs to photon reinforcing thermionic emission photoelectric conversion device, concretely relates to all solid-state photon reinforcing thermionic emission photoelectric conversion device of nanometer spacer layer.
Background
Solar energy is taken as a safe, environment-friendly and renewable green energy source, and the high-efficiency application technology of the solar energy is widely regarded and researched. Photon enhanced thermionic emission effect is a new solar energy efficient application technology recently proposed, which adopts a vacuum close-contact P-type heavily doped semiconductor cathode and a low work function anode, and utilizes thermionic emission of photo-generated electrons generated after the cathode absorbs and focuses sunlight to perform photoelectric energy conversion. Since the photon-enhanced thermionic emission device can simultaneously utilize photon energy and photo-generated heat energy, the conversion efficiency of a single device can reach 38%. In addition, the anode can be combined with a waste heat utilization device to form a composite utilization system, and the total conversion efficiency can reach more than 50%.
However, in practical application, the cathode active layer material of the photon-enhanced thermionic emission device adopting the vacuum structure is easy to desorb at high temperature, which results in the decrease of the cathode performance, and meanwhile, the temperature rise will affect the vacuum degree of the device, which further affects the working life of the vacuum device.
SUMMERY OF THE UTILITY MODEL
The utility model discloses a main objective is the photon reinforcing thermionic emission device who solves vacuum structure among the prior art during operation under the high temperature, and the technical problem that working life and conversion efficiency can reduce provides the all solid-state photon reinforcing thermionic emission photoelectric conversion device of nanometer spacer layer.
In order to achieve the above object, the utility model provides a following technical scheme:
the all-solid-state photon enhanced thermionic emission photoelectric conversion device of the nanometer spacing layer is characterized by comprising an absorption layer, a barrier layer and an electrode layer;
the absorption layer comprises a first rectangular absorption part, a plurality of second absorption parts are arranged on the side surface, facing the electrode layer, of the first absorption part, the second absorption parts are arranged in a matrix shape, the second absorption parts are connected with the electrode layer through barrier layers respectively, and the barrier layers correspond to the second absorption parts in arrangement;
the absorption layer is made of a P-type doped semiconductor material with the forbidden band width of 0.8-2.1eV, the barrier layer is made of a semiconductor material with the forbidden band width larger than that of the absorption layer, and the energy difference of a conduction band at the heterojunction interface of the absorption layer and the barrier layer is smaller than the energy difference of a valence band; the electrode layer is made of metal materials.
The all-solid-state photon enhanced thermionic emission photoelectric conversion device of the nanometer spacing layer is characterized by comprising a plurality of electrode layers, wherein an absorption layer and a barrier layer are arranged between every two adjacent electrode layers;
the absorption layer comprises a first rectangular absorption part, one side surface of the first absorption part is connected with one of the two adjacent electrode layers, the other side surface of the first absorption part is provided with a plurality of second absorption parts, the second absorption parts are arranged in a matrix shape, each second absorption part is connected with the other of the two adjacent electrode layers through a barrier layer, and the barrier layers are arranged correspondingly to the second absorption parts;
the absorption layer is made of a P-type doped semiconductor material with the forbidden band width of 0.8-2.1eV, the barrier layer is made of a semiconductor material with the forbidden band width larger than that of the absorption layer, and the energy difference of a conduction band at the heterojunction interface of the absorption layer and the barrier layer is smaller than the energy difference of a valence band; the electrode layer is made of metal materials.
The absorption layer is made of a narrow-bandgap semiconductor material with the forbidden band width of 0.8-2.1eV, adopts P-type heavy doping and is used for absorbing incident solar photons and generating photon-generated carriers through a photoelectric effect; the barrier layer is made of a wide-bandgap semiconductor material with the forbidden band width larger than that of the material of the absorption layer; the selected absorbing layer material and the barrier layer material form a heterojunction, and the energy difference of conduction bands of the absorbing layer and the barrier layer material at the heterojunction interface is far smaller than the energy difference of valence bands; a heterojunction interface formed by the absorbing layer and the barrier layer material has lower defects and mismatching, and the recombination rate at the interface is lower; the electrode layers are metal layers, can form a low-defect heterojunction interface with a semiconductor material, and simultaneously have lower series resistance;
furthermore, the edges of the second absorption parts which are arranged in a matrix shape are flush with the edges of the first absorption parts, and the second absorption parts are arranged in an array shape.
Further, the second absorbing portion is cylindrical.
Furthermore, in order to ensure that the photo-generated electrons cross the barrier layer in a thermionic emission mode, the thickness of the barrier layer is 10-100nm, and the thickness of the barrier layer is 10-100 nm.
Compared with the prior art, the beneficial effects of the utility model are that:
1. the utility model discloses an all solid-state photon reinforcing thermionic emission photoelectric conversion device of nanometer interval layer is all solid state configuration, and the heterojunction interface of its absorbed layer and barrier layer will produce the potential barrier structure that has charge selectivity, utilizes the separation of photogenerated electron at the inside PETE effect of material and output photogenerated carrier, and the interval layer that the second absorption portion in the absorbed layer and barrier layer design for the part is filled can produce the temperature difference that can supply to utilize inside the material. The absorbing layer absorbs incident solar photons, photon-generated carriers are generated through a photoelectric effect, the materials of the absorbing layer and the barrier layer are selected, a heterojunction is formed between the absorbing layer and the barrier layer, the absorbing layer and the barrier layer have lower defects and mismatch, the spacing structures of the second absorbing part and the barrier layer can effectively reduce the effective heat conduction area from the absorbing layer to the electrode layer, and the heat energy transmission is reduced, so that the temperature of the absorbing layer is higher than that of the electrode layer, in addition, the incident light on the side surface of the absorbing layer can be absorbed and reflected for many times between the second absorbing part, a light trap effect is generated, and the absorption of a device on focused incident light can be effectively improved. The utility model discloses a vacuum layer has been cancelled to the device, adopts second absorption portion and barrier layer to produce available temperature difference, does not need surface activation, does not introduce space charge effect, and fundamentally has solved a great deal of difficult problem that vacuum photon reinforcing thermionic emission photoelectric conversion device faces.
2. The utility model discloses a barrier layer thickness is 10-100nm, can guarantee that the barrier layer is crossed to the photogenerated electron with thermionic emission's mode, rather than modes such as tunneling effect or diffusion transportation.
3. The utility model discloses an all solid-state photon reinforcing thermionic emission photoelectric conversion device of another kind nanometer spacer layer, it is less to avoid the available difference in temperature that single photoelectric conversion device produced, with the structural connection of a plurality of absorbed layers, barrier layer and electrode layer with similar series connection, and then produce sufficient temperature difference.
4. The utility model discloses connect the waste heat utilization equipment in electrode layer department, on the one hand can effectively utilize the heat on the electrode layer, on the other hand can be through in time leading away the heat on the electrode layer, makes the temperature difference of photoelectric conversion device change and produces.
Drawings
Fig. 1 is a schematic structural diagram of a first embodiment of the present invention (where arrows indicate incident light directions);
fig. 2 is a schematic structural diagram of a second embodiment of the present invention (where arrows indicate incident light directions);
fig. 3 is a diagram of a structure of an energy band according to a first embodiment of the present invention;
fig. 4 is a schematic diagram of the optical trapping effect of the second absorption portion in the first and second embodiments of the present invention (where solid line arrows indicate incident light, and dotted line arrows indicate the direction of optical trapping).
Wherein, 1-absorption layer, 101-first absorption part, 102-second absorption part, 2-barrier layer and 3-electrode layer.
Detailed Description
The technical solution of the present invention will be described clearly and completely with reference to the embodiments of the present invention and the accompanying drawings, and obviously, the described embodiments are not intended to limit the present invention.
Example one
Referring to fig. 1, the all-solid-state photon enhanced thermionic emission photoelectric conversion device with a nano-spacer layer comprises an absorption layer 1, a barrier layer 2 and an electrode layer 3. The absorption layer 1 comprises a first absorption part 101 in a rectangular parallelepiped shape, a plurality of cylindrical second absorption parts 102 are arranged on the side surface of the first absorption part 101 facing the electrode layer 3, the edges of the second absorption parts 102 arranged in a matrix shape are flush with the edges of the first absorption part 101, each second absorption part 102 is connected with the electrode layer 3 through a barrier layer 2, the barrier layers 2 correspond to the arrangement of the second absorption parts 102, and the thickness of the barrier layers 2 is 10 nm. The absorption layer 1 is made of a P-type heavily doped semiconductor material with the forbidden band width of 0.8eV, the barrier layer 2 is made of a semiconductor material with the forbidden band width larger than that of the absorption layer 1, and the energy difference of a conduction band at the heterojunction interface of the absorption layer 1 and the barrier layer 2 is smaller than the energy difference of a valence band; the electrode layer 3 is made of a metal material.
Fig. 3 is a diagram of an energy band structure according to the first embodiment, wherein: eFIs the fermi level; eg1The forbidden bandwidth of the absorption layer 1; eg2The forbidden bandwidth of the barrier layer 2; delta ECIs a conduction band energy difference, namely a conduction band potential barrier; delta EVThe valence band energy difference, namely the valence band potential barrier; vCA barrier for the absorption layer 1; vAIs a potential barrier for the electrode layer 5.
Based on the utility model discloses an embodiment one, in the utility model discloses an in other embodiments, the thickness of barrier layer 2 can also be 20nm, 30nm, 55nm or 100nm, and the semiconductor material forbidden band width that corresponds the adoption of absorbed layer 1 is 2.1eV, 1.5eV, 1.8eV and 1.0eV respectively.
Example two
Referring to fig. 2, the all-solid-state photon enhanced thermionic emission photoelectric conversion device with the nano-spacer layer comprises a plurality of electrode layers 3, and an absorption layer 1 is arranged between every two adjacent electrode layers 3. The absorption layer 1 comprises a first absorption part 101 in a cuboid shape, one side surface of the first absorption part 101 is connected with one of two adjacent electrode layers 3, the other side surface of the first absorption part 101 is provided with a plurality of cylindrical second absorption parts 102, the edges of the second absorption parts 102 arranged in a matrix shape are flush with the edge of the first absorption part 101, each second absorption part 102 is connected with the other one of the two adjacent electrode layers 3 through a barrier layer 2, the arrangement of the barrier layers 2 is corresponding to that of the second absorption parts 102, the thickness of the barrier layer 2 is 30nm, the tail end electrode layer 3 is connected with a waste heat utilization device, the waste heat utilization device can select a proper waste heat utilization device according to the heat on the electrode layer 3 and the specific design of the photoelectric conversion device, and can also enable the electrode layer 3 to be in direct contact with other structures needing to supply heat. The absorption layer 1 is made of a P-type doped semiconductor material with the forbidden band width of 2.1eV, the barrier layer 2 is made of a semiconductor material with the forbidden band width larger than that of the absorption layer 1, and the energy difference of a conduction band at the heterojunction interface of the absorption layer 1 and the barrier layer 2 is smaller than the energy difference of a valence band; the electrode layer 3 is made of a metal material.
Based on the utility model discloses an embodiment two, in the utility model discloses a in other embodiments, the thickness of barrier layer 2 can also be 20nm, 10nm, 65nm or 100nm, and the semiconductor material forbidden band width that corresponds the adoption of absorbed layer 1 is 0.8eV, 1.2eV, 1.8eV and 1.0eV respectively.
The absorption layer 1 is made of a narrow-bandgap semiconductor material with the forbidden band width of 0.8-2.1eV, adopts P-type heavy doping, is used for absorbing incident solar photons and generates a photon-generated carrier through a photoelectric effect; the barrier layer 2 is made of a wide-bandgap semiconductor material with a bandgap larger than that of the material of the absorption layer 1. In order to ensure that the photo-generated electrons cross the barrier layer 2 by means of thermionic emission, rather than tunneling or diffusion transport, the thickness of the barrier layer 2 should be between 10-100 nm. The selected material of the absorption layer 1 and the material of the barrier layer 2 form a heterojunction, the conduction band energy difference of the materials of the absorption layer 1 and the barrier layer 2 at the heterojunction interface is far smaller than the valence band energy difference, the heterojunction interface formed by the materials of the absorption layer 1 and the barrier layer 2 has lower defect and mismatch, and the recombination rate at the interface is smaller. The electrode layer 3 is a metal layer, can form a low-defect heterojunction interface with a semiconductor material, and has low series resistance. In order to generate available temperature difference in the device, a part of the absorption layer 1 and the barrier layer 2 is removed by adopting technological means such as etching and the like, and a columnar nano spacing layer with a nano scale is formed between the absorption layer 1 and the electrode layer 3, so that the effective heat conduction area from the absorption layer 1 to the electrode layer 3 can be effectively reduced by the nano spacing layer, the heat energy transmission is reduced, and the temperature of the absorption layer 1 is higher than that of the electrode layer 3. Since the available temperature difference generated by a single absorption layer 1/nano spacing layer/electrode layer 3 unit is small, in order to generate enough temperature difference, the practical device can be formed by adopting a series-like structure by adopting a plurality of absorption layer 1/nano spacing layer/electrode layer 3 units.
The focused incident light irradiates the all-solid-state photon enhanced thermionic emission photoelectric conversion device with the nano-spacer layer from the front and the side of the absorption layer 1 of the device. As shown in fig. 4, since the nano-spacer is a pillar-like jungle-like structure when viewed from the side, the side-incident light is absorbed and reflected many times on different second absorption portions 102 in the nano-spacer, and the light trapping effect can be generated. By optimizing the structure and the arrangement mode of the nano spacer layer unit, the absorption of the device on focused incident light can be effectively improved.
The absorption layer 1 receives the irradiation of focused incident light, the conduction band electrons of the absorption layer absorb photons with energy larger than the recent width of the absorption layer, the conduction band electrons are excited to the material of the absorption layer to become photogenerated electrons with negative charge, and photogenerated holes with positive points are left in the valence band of the material of the absorption layer 1. The photo-generated electrons and photo-generated holes are respectively and rapidly thermalized to the top of the conduction band and the bottom of the valence band and are transported to the heterojunction interface of the second absorption part 102 and the barrier layer 2 of the absorption layer 1 through diffusion. Since the electron barrier formed by the conduction band energy difference at the interface is much smaller than the hole barrier formed by the valence band energy difference, the photo-generated electrons can easily cross the barrier layer 2 and enter the electrode layer 3 in a thermionic emission manner, and the photo-generated holes cannot be output to the electrode layer 3. Meanwhile, the temperature of the absorption layer 1 is higher than that of the electrode layer 3, so that the thermionic emission current from the absorption layer 1 to the electrode layer 3 is larger than the reverse thermionic emission current from the electrode layer to the absorption layer, and the net current output from the absorption layer 1 to the electrode layer 3 is formed at the heterojunction interface. Because the absorption layer 1 is made of a P-type heavily doped semiconductor material and the barrier layer 2 is made of a wide bandgap semiconductor material, the barrier structure formed at high temperature is basically unchanged, and the working mechanism of the high temperature wide bandgap semiconductor material can still be effective.
The utility model discloses cancelled the vacuum layer, adopted the nanometer wall to produce usable temperature difference, do not need surface activation, do not introduce space charge effect, fundamentally has solved a great deal of difficult problem that vacuum photon reinforcing thermionic emission photoelectric conversion device faces. Meanwhile, the structure of the semiconductor device is similar to that of a traditional semiconductor device, the device can be manufactured by taking the reference of the existing process, and the practical development of photon enhanced thermionic emission effect is facilitated.
Present vacuum photon reinforcing thermionic emission photoelectric conversion device because cathode active layer material is unstable under the high temperature, has space charge effect to reduce output current, high temperature and is difficult to realize the difficult problem that blocks practical development of device such as high vacuum encapsulation, the utility model discloses the all solid-state photoelectric conversion device can effectively solve the above-mentioned difficult problem that vacuum photon reinforcing thermionic emission photoelectric conversion device faces, promotes the practicality of the relevant application of photon reinforcing thermionic emission effect.
The above is only the embodiment of the present invention, and is not the limitation of the protection scope of the present invention, all the equivalent structure changes made in the contents of the specification and the drawings, or the direct or indirect application in other related technical fields are included in the patent protection scope of the present invention.
Claims (9)
1. The all-solid-state photon enhanced thermionic emission photoelectric conversion device of the nanometer spacing layer is characterized in that: comprises an absorption layer (1), a barrier layer (2) and an electrode layer (3);
the absorption layer (1) comprises a first rectangular absorption part (101), a plurality of second absorption parts (102) are arranged on the side surface, facing the electrode layer (3), of the first absorption part (101), the second absorption parts (102) are arranged in a matrix shape, the second absorption parts (102) are connected with the electrode layer (3) through barrier layers (2), and the barrier layers (2) correspond to the second absorption parts (102) in arrangement;
the absorption layer (1) is made of a P-type doped semiconductor material with the forbidden band width of 0.8-2.1eV, the barrier layer (2) is made of a semiconductor material with the forbidden band width larger than that of the absorption layer (1), and the energy difference of a conduction band at the heterojunction interface of the absorption layer (1) and the barrier layer (2) is smaller than the energy difference of a valence band; the electrode layer (3) is made of metal materials.
2. The all-solid-state photon enhanced thermionic emission photoelectric conversion device of a nano-spacer layer of claim 1, wherein: the edges of the second absorption parts (102) arranged in a matrix shape are flush with the edges of the first absorption parts (101).
3. The all-solid-state photon enhanced thermionic emission photoelectric conversion device of a nanolayer as in claim 1 or 2, wherein: the second absorbing part (102) is cylindrical.
4. The all-solid-state photon enhanced thermionic emission photoelectric conversion device of a nano-spacer layer of claim 3, wherein: the thickness of the barrier layer (2) is 10-100 nm.
5. The all-solid-state photon enhanced thermionic emission photoelectric conversion device of the nanometer spacing layer is characterized in that: the electrode comprises a plurality of electrode layers (3), wherein an absorption layer (1) and a barrier layer (2) are arranged between every two adjacent electrode layers (3);
the absorption layer (1) comprises a first rectangular parallelepiped absorption part (101), one side surface of the first absorption part (101) is connected with one of the two adjacent electrode layers (3), the other side surface of the first absorption part (101) is provided with a plurality of second absorption parts (102), the second absorption parts (102) are arranged in a matrix shape, each second absorption part (102) is connected with the other one of the two adjacent electrode layers (3) through a barrier layer (2), and the barrier layers (2) are arranged correspondingly to the second absorption parts (102);
the absorption layer (1) is made of a P-type doped semiconductor material with the forbidden band width of 0.8-2.1eV, the barrier layer (2) is made of a semiconductor material with the forbidden band width larger than that of the absorption layer (1), and the energy difference of a conduction band at the heterojunction interface of the absorption layer (1) and the barrier layer (2) is smaller than the energy difference of a valence band; the electrode layer (3) is made of metal materials.
6. The all-solid-state photon enhanced thermionic emission photoelectric conversion device of a nano-spacer layer of claim 5, wherein: the edges of the second absorption parts (102) arranged in a matrix shape are flush with the edges of the first absorption parts (101).
7. The all-solid-state photon enhanced thermionic emission photoelectric conversion device of a nanolayer as in claim 5 or 6, wherein: the second absorbing part (102) is cylindrical.
8. The all-solid-state photon enhanced thermionic emission photoelectric conversion device of a nano-spacer layer of claim 7, wherein: the thickness of the barrier layer (2) is 10-100 nm.
9. The all-solid-state photon enhanced thermionic emission photoelectric conversion device of a nanolayer as in claim 8, wherein: the tail end electrode layer (3) is connected with a waste heat utilization device.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110970511A (en) * | 2019-12-29 | 2020-04-07 | 中国科学院西安光学精密机械研究所 | All-solid-state photon enhanced thermionic emission photoelectric conversion device with nano spacer layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110970511A (en) * | 2019-12-29 | 2020-04-07 | 中国科学院西安光学精密机械研究所 | All-solid-state photon enhanced thermionic emission photoelectric conversion device with nano spacer layer |
| CN110970511B (en) * | 2019-12-29 | 2024-05-31 | 中国科学院西安光学精密机械研究所 | All-solid-state photon enhanced thermionic emission photoelectric conversion device with nanometer spacing layer |
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