CN211150576U - High-temperature solar photoelectric conversion structure based on photon-enhanced thermionic emission - Google Patents
High-temperature solar photoelectric conversion structure based on photon-enhanced thermionic emission Download PDFInfo
- Publication number
- CN211150576U CN211150576U CN201922090727.4U CN201922090727U CN211150576U CN 211150576 U CN211150576 U CN 211150576U CN 201922090727 U CN201922090727 U CN 201922090727U CN 211150576 U CN211150576 U CN 211150576U
- Authority
- CN
- China
- Prior art keywords
- layer
- electrode layer
- barrier
- absorption layer
- positive electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 36
- 230000004888 barrier function Effects 0.000 claims abstract description 70
- 238000010521 absorption reaction Methods 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 239000007769 metal material Substances 0.000 claims abstract description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 6
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 6
- 229910002704 AlGaN Inorganic materials 0.000 claims description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 3
- 229910004613 CdTe Inorganic materials 0.000 claims description 3
- 229910004611 CdZnTe Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- 239000005020 polyethylene terephthalate Substances 0.000 abstract description 26
- 229920000139 polyethylene terephthalate Polymers 0.000 abstract description 26
- 150000001875 compounds Chemical class 0.000 abstract description 8
- 238000005036 potential barrier Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 6
- 238000010248 power generation Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005421 electrostatic potential Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model belongs to the field of solar energy compound utilization, in order to solve the technical problems that the energy conversion efficiency and the service life of a PETE device are low and the output current is insufficient when a solar energy compound utilization system utilizing a vacuum PETE device works at high temperature in the prior art, the utility model provides an all-solid-state high-temperature solar photoelectric conversion structure based on photon-enhanced thermionic emission, which comprises a positive electrode layer, an absorption layer, a barrier layer and a negative electrode layer which are sequentially arranged from top to bottom; the absorption layer is made of a P-type heavily doped narrow bandgap semiconductor material; the barrier layer is made of a semiconductor material with a forbidden band width larger than that of the absorption layer; the conduction band potential barrier at the interface of the barrier layer and the absorption layer is smaller than the valence band potential barrier; the negative electrode layer is made of a metal material; the positive electrode layer is made of metal materials, and is partially overlapped with the absorption layer; or, the positive electrode layer adopts a transparent metal oxide conductive film layer material with a whole surface or grid structure.
Description
Technical Field
The utility model relates to a solar energy utilizes the battery, concretely relates to high temperature solar energy photoelectric conversion structure based on photon reinforcing thermionic emission.
Background
Solar energy is a safe and environment-friendly renewable energy source, and under the large background of energy crisis and environmental deterioration, the efficient utilization of solar energy is widely regarded and researched. Photo-thermal power generation and photovoltaic power generation are two main solar power generation modes in the prior art.
The photo-thermal power generation is to collect solar energy as heat energy and convert the heat energy into electric energy by using a thermoelectric device, and the photo-thermal power generation can utilize the energy of the solar full spectrum, but the conversion efficiency is low. The photovoltaic power generation is to directly convert solar energy into electric energy by utilizing a photovoltaic cell, has higher conversion efficiency, but can only respond to the solar energy of partial spectrum bands according to different materials of the photovoltaic cell.
Because the photovoltaic cell can produce its unable waste heat of utilizing when working, if can couple the waste heat of photovoltaic cell to rear end thermoelectric device and utilize, constitute the combined utilization system with photovoltaic cell and thermoelectric device, can improve total energy conversion efficiency by a wide margin. However, the built-in field of the existing photovoltaic cell for classifying photo-generated carriers is rapidly reduced to disappear along with the rise of temperature, so that the conversion efficiency of the existing photovoltaic cell is rapidly reduced along with the rise of temperature, and the existing photovoltaic cell cannot work in a high-temperature environment. The thermal coupling temperature of the existing solar energy compound utilization system is very low, and the rear-end thermoelectric device cannot effectively output electric energy.
The 2010 researchers at stanford university have proposed a new concept of efficient solar energy utilization, called photon enhanced thermionic emission effect (PETE effect). Their proposed device consists of a semiconductor cathode and a low work function anode encapsulated in a vacuum environment. The cathode receives the focused illumination and is in a high-temperature state, and the anode is in a low-temperature state because the anode is isolated from the cathode in vacuum. When not illuminated, it is similar to a conventional thermo-electric emission device, and when illuminated, the cathode conduction band will generate a large number of photo-generated electrons that readily gain enough kinetic energy at high temperatures to be emitted into a vacuum and collected by the anode to produce an electrical output. Electrons absorb photon energy across the band gap and absorb thermal energy for emission into the vacuum. Because photon energy and photoproduction heat energy are simultaneously utilized in the process of thermionic emission of photoproduction electrons, the PETE device has high conversion efficiency, and the theoretical efficiency is higher than 38%. Because the PETE device can work at high temperature, the PETE device can be combined with a heat engine to form an efficient compound utilization system, and the conversion efficiency of the solar compound utilization system formed by the PETE device can exceed 50 percent through theoretical calculation.
However, in practical application research, the PETE device with a vacuum structure has many technical difficulties and challenges which are difficult to solve: the activation layer on the surface of the PETE cathode for reducing the electron affinity of the material can be decomposed and desorbed unstably at high temperature, so that the energy conversion efficiency and the service life of a PETE device are reduced; the vacuum structure is used for introducing a space charge effect when large emission current is generated, so that the output current of the PETE device is reduced; the vacuum degree of the PETE device is reduced under the high temperature condition, which seriously influences the working performance and the service life of the PETE device and puts severe requirements on the vacuum packaging process and the cleaning degree of the device. The above technical problems become the bottleneck problem of PETE effect research, and hinder the practical development of the PETE technology.
SUMMERY OF THE UTILITY MODEL
The utility model discloses a main aim at solves among the prior art and utilizes PETE effect's solar energy complex to utilize the system when PETE device energy conversion efficiency and working life are low under the high temperature work to and technical problem such as output current is not enough provides a high temperature solar energy photoelectric conversion structure based on photon reinforcing thermionic emission.
In order to achieve the above object, the utility model provides a following technical scheme:
a high-temperature solar cell structure based on photon enhanced thermionic emission is characterized by comprising a positive electrode layer, an absorption layer, a barrier layer and a negative electrode layer which are sequentially arranged from top to bottom; the absorption layer is made of a semiconductor material with the forbidden band width of 0.8-2.1 eV; the barrier layer is made of a semiconductor material with a forbidden band width larger than that of the absorption layer; the conduction band potential barrier at the interface of the barrier layer and the absorption layer is smaller than the valence band potential barrier; the negative electrode layer is made of a metal material;
the positive electrode layer is made of metal materials, and is partially overlapped with the absorption layer;
or, the positive electrode layer adopts a transparent metal oxide conductive film layer material with a whole surface or grid structure.
Further, a light-transmitting buffer layer is arranged between the positive electrode layer and the absorption layer.
Further, the absorption layer is made of a P-type heavily doped semiconductor material.
Further, the barrier layer has a thickness of 10-100 nm.
Further, a light condensing device is arranged above the positive electrode layer.
Furthermore, the absorption layer is made of GaAs, CdTe, GaN or Si, and the corresponding barrier layer is made of AlGaAs, CdZnTe, AlGaN or diamond.
Compared with the prior art, the beneficial effects of the utility model are that:
1. the invention relates to a high-temperature solar energy photoelectric conversion structure based on photon enhanced thermionic emission, which is an all-solid-state solar cell structure, the height of an electron barrier of the high-temperature solar energy photoelectric conversion structure can be randomly controlled by selecting materials of an absorption layer and the barrier layer and adjusting the doping concentration of the barrier layer, the high-temperature solar energy photoelectric conversion structure is not influenced by temperature rise, the high-temperature solar energy photoelectric conversion structure can effectively perform solar energy photoelectric conversion when external refrigeration and temperature reduction are not performed, and the high-temperature solar energy photoelectric conversion structure is used as a core device, forms an ideal solar energy photo-thermal compound utilization; in addition, the structure of the semiconductor device is similar to that of the traditional semiconductor device, the process is compatible, mature crystal growth and chip manufacturing technologies can be used for reference, and the practicality of the PETE effect application technology is facilitated. The solar photoelectric conversion structure has no space charge effect, and the adverse effect of the electrostatic potential barrier on the output current can be reduced or even eliminated by methods such as modulation doping of the barrier layer and the like; the wide-bandgap barrier layer is adopted to replace a vacuum layer, and the energy band of the heterojunction interface is discontinuous to form a charge selective barrier layer structure, so that the photo-generated carriers can be separated and output based on the PETE effect. Moreover, the barrier layer is made of a semiconductor material with a forbidden band width larger than that of the absorption layer, a good heterojunction interface can be formed with the absorption layer, and the negative electrode layer and the barrier layer can form a low-defect heterojunction cross section and have low series resistance.
2. The utility model discloses a buffer layer is located between positive electrode layer and the absorbed layer for reduce this interface department because the interface that the defect leads to is compound.
3. The utility model discloses an absorbed layer adopts P type heavily doped semiconductor material for absorb the solar photon and produce the photoproduction electron hole pair.
4. The thickness of the barrier layer of the utility model is 10-100nm, which ensures that the photoproduction electron crosses the barrier layer in the mode of thermionic emission.
5. The utility model discloses a positive electrode layer top is equipped with beam condensing unit, makes the solar cell structure can work under the focusing sunlight.
Drawings
Fig. 1 is a schematic structural diagram of a first embodiment of the present invention;
fig. 2 is a schematic structural diagram of a second embodiment of the present invention;
fig. 3 is a schematic structural diagram of a third embodiment of the present invention;
fig. 4 is a diagram illustrating an energy level structure of a second solar photovoltaic conversion structure according to an embodiment of the present invention (the arrow in the figure indicates the incident light direction).
Wherein, 1-positive electrode layer, 2-buffer layer, 3-absorption layer, 4-barrier layer, and 5-negative electrode layer.
Detailed Description
The technical solution of the present invention will be described clearly and completely with reference to the embodiments of the present invention and the accompanying drawings, and obviously, the described embodiments are not intended to limit the present invention.
Compare in the PETE device of current vacuum structure, the utility model discloses cancel the vacuum layer, solved negative pole activation layer material high temperature desorption, space charge effect that vacuum PETE device faced fundamentally and reduced output current to and be difficult to maintain high vacuum scheduling problem under the high temperature, be favorable to the practical development of PETE effect.
Example one
Referring to fig. 1, a high-temperature solar photovoltaic conversion structure based on photon-enhanced thermionic emission comprises a positive electrode layer 1, an absorption layer 3, a barrier layer 4 and a negative electrode layer 5, which are sequentially arranged from top to bottom, wherein a light-transmitting buffer layer 2 is further arranged between the positive electrode layer 1 and the absorption layer 3. The positive electrode layer 1 is made of a transparent metal oxide material; the absorption layer 3 is made of a semiconductor material with a narrow bandwidth and is heavily doped in a P type manner; the barrier layer 4 is a wide bandgap semiconductor material with a bandgap width larger than that of the absorption layer 3, and can form a good heterojunction cross section with the narrow bandgap semiconductor material of the absorption layer, a conduction band barrier formed by the two semiconductors at the interface of the absorption layer 3 and the barrier layer 4 is far smaller than a valence band barrier thereof, and the thickness of the barrier layer 4 is 10 nm; the negative electrode layer 5 is made of a metal material.
Example two
Referring to fig. 2, a high-temperature solar photovoltaic conversion structure based on photon-enhanced thermionic emission comprises a positive electrode layer 1, an absorption layer 3, a barrier layer 4 and a negative electrode layer 5, which are sequentially arranged from top to bottom, wherein a transparent buffer layer 2 is further arranged between the positive electrode layer 1 and the absorption layer 3. The positive electrode layer 1 is made of metal materials, the positive electrode layer 1 is distributed on two sides of the top of the buffer layer 2, and the middle of the buffer layer 2 is exposed to absorb light; the absorption layer 3 is made of a semiconductor material with a narrow bandwidth and is heavily doped in a P type manner; the barrier layer 4 is a wide bandgap semiconductor material with a bandgap width larger than that of the absorption layer 3, and can form a good heterojunction cross section with the narrow bandgap semiconductor material of the absorption layer, a conduction band barrier formed by the two semiconductors at the interface of the absorption layer 3 and the barrier layer 4 is far smaller than a valence band barrier thereof, and the thickness of the barrier layer 4 is 100 nm; the negative electrode layer 5 is made of a metal material.
Fig. 4 is a structural diagram of an energy level of a solar photovoltaic conversion structure according to a second embodiment, wherein: eFIs the fermi level; eg1The forbidden bandwidth of the absorption layer 3; eg2The forbidden bandwidth of the barrier layer 4; delta ECIs a conduction band energy difference, namely a conduction band potential barrier; delta EVThe valence band energy difference, namely the valence band potential barrier; vCA barrier for the absorption layer 3; vAIs a potential barrier of the negative electrode layer 5.
EXAMPLE III
Referring to fig. 3, the high-temperature solar photovoltaic conversion structure based on photon-enhanced thermionic emission comprises a positive electrode layer 1, an absorption layer 3, a barrier layer 4 and a negative electrode layer 5, which are sequentially arranged from top to bottom. The positive electrode layer 1 adopts a transparent metal oxide with a grid structure; the absorption layer 3 is made of a semiconductor material with a narrow bandwidth and is heavily doped in a P type manner; the barrier layer 4 is a wide bandgap semiconductor material with a bandgap width larger than that of the absorption layer 3, and can form a good heterojunction cross section with the narrow bandgap semiconductor material of the absorption layer, a conduction band barrier formed by the two semiconductors at the interface of the absorption layer 3 and the barrier layer 4 is far smaller than a valence band barrier thereof, and the thickness of the barrier layer 4 is 60 nm; the negative electrode layer 5 is made of a metal material.
A light-transmitting buffer layer 2 may also be disposed between the absorption layer 3 and the positive electrode layer 1 of the third embodiment, so as to reduce interface recombination due to defects at this interface.
In the first to third embodiments, the absorption layer 3 is used for absorbing solar photons to generate photo-generated electron-hole pairs, the barrier layer 4 is a wide bandgap semiconductor material with a bandgap greater than that of the absorption layer 3, and can form a good heterojunction interface with the narrow bandgap semiconductor material of the absorption layer 3, and a conduction band barrier formed by the two semiconductors at the interface is much smaller than a valence band barrier thereof; the absorption layer 3 is made of a semiconductor material with a narrow forbidden band, and the forbidden band width is 0.8-2.1 eV; the buffer layer 2 is positioned between the materials of the positive electrode layer 1 and the absorption layer 3 and is used for reducing the interface recombination caused by defects at the interface; the positive electrode layer 1 can be a metal material, or a transparent conductive layer or a metal oxide layer with a light-transmitting structure such as a grid bar, and can form low-impedance electric contact with the buffer layer 2 or the absorption layer 3 so as to reduce the series resistance of the device; semiconductor materials that may be used for the absorber layer 3 and the barrier layer 4 include, but are not limited to: GaAs/AlGaAs, CdTe/CdZnTe, GaN/AlGaN, and Si/diamond; the negative electrode layer 5 is a metal layer capable of forming a low-defect heterojunction interface with the barrier layer 4 and has a low series resistance. Different from a vacuum PETE device, the wide-bandgap semiconductor material is adopted as a barrier layer to replace a vacuum layer, the energy band of a heterojunction interface is discontinuous to form a charge selective barrier layer structure, and a photon-generated carrier is separated and output based on the PETE effect.
The high-temperature solar cell based on photon-enhanced thermionic emission can receive direct illumination of focused sunlight, and a light-gathering device, such as a light-gathering mirror, can be arranged above the positive electrode layer 1. The absorption layer 3 absorbs the incident focused sunlight, and according to the internal photoelectric effect, electrons are excited to the conduction band of the material of the absorption layer 3, and holes are generated in the valence band, thereby generating photogenerated carriers. These photogenerated carriers will be transported to the heterojunction interface of the absorber layer 3 and the barrier layer 4 after generation. Because the forbidden band width of the barrier layer 4 is far larger than that of the absorption layer 3, and the valence band energy difference is far larger than that of the conduction band energy difference, after the photo-generated electrons reach the interface, the photo-generated electrons can easily cross the barrier layer to be output to an external circuit in a thermionic emission mode due to the small facing conduction band barrier, and the photo-generated holes can hardly cross the barrier layer to be output due to the very high valence band barrier facing the valence band barrier in the valence band. Since the barrier layer 4 having such an energy level structure can realize selective output of photo-generated electrons, it may also be referred to as a charge selective barrier layer structure. To ensure that the photo-generated electrons cross the barrier layer 4 in a thermionic emission manner, it is necessary to ensure that the thickness of the barrier layer 4 is between 10-100 nm. The absorption layer 3 is made of heavily doped semiconductor material, and the barrier layer 4 is made of wide bandgap semiconductor material, so as to ensure that the energy band structure can be maintained at high temperature, and the working mechanism is still effective. Therefore, the high-temperature solar photoelectric conversion structure based on photon enhanced thermionic emission can effectively convert solar energy into electric energy under the high-temperature condition for output.
Compared with a PETE device with a vacuum structure, the high-temperature solar photoelectric conversion structure with photon-enhanced thermionic emission does not need surface activation, and the height of an electron barrier can be controlled at will by selecting materials of the absorption layer 3 and the barrier layer 4 and adjusting the doping concentration of the barrier layer 4; the space charge effect is not introduced, and the adverse effect of the electrostatic potential barrier on the output current can be reduced or even eliminated by methods such as modulation doping of the barrier layer 4 and the like; the structure of the semiconductor device is similar to that of the traditional semiconductor device, the process is compatible, mature crystal growth and chip manufacturing technology can be used for reference, and the practicability of the device is facilitated; but as the photoelectric conversion device of high temperature work, the utility model discloses an all-solid-state PETE device can regard as the core device, constitutes the compound system that utilizes of solar light-heat of ideal with focusing device and heat engine, further improves conversion efficiency.
The above is only the embodiment of the present invention, and is not the limitation of the protection scope of the present invention, all the equivalent structure changes made in the contents of the specification and the drawings, or the direct or indirect application in other related technical fields are included in the patent protection scope of the present invention.
Claims (6)
1. A high-temperature solar photoelectric conversion structure based on photon-enhanced thermionic emission is characterized in that: comprises a positive electrode layer (1), an absorption layer (3), a barrier layer (4) and a negative electrode layer (5) which are arranged from top to bottom in sequence;
the absorption layer (3) is made of a semiconductor material with the forbidden band width of 0.8-2.1 eV;
the barrier layer (4) is made of a semiconductor material with a forbidden band width larger than that of the absorption layer (3); the conduction band barrier at the interface of the barrier layer (4) and the absorption layer (3) is smaller than the valence band barrier;
the negative electrode layer (5) is made of a metal material;
the positive electrode layer (1) is made of a metal material, and the positive electrode layer (1) is partially overlapped with the absorption layer (3);
or, the positive electrode layer (1) adopts a transparent metal oxide conductive film layer material with a whole surface or grid structure.
2. The high-temperature solar photovoltaic conversion structure based on photon-enhanced thermionic emission as claimed in claim 1, wherein: a light-transmitting buffer layer (2) is arranged between the positive electrode layer (1) and the absorption layer (3).
3. A high temperature solar photovoltaic conversion structure based on photon enhanced thermionic emission as claimed in claim 1 or 2, wherein: the absorption layer (3) is made of a P-type heavily doped semiconductor material.
4. The high-temperature solar photovoltaic conversion structure based on photon-enhanced thermionic emission as claimed in claim 3, wherein: the thickness of the barrier layer (4) is 10-100 nm.
5. The high-temperature solar photovoltaic conversion structure based on photon-enhanced thermionic emission as claimed in claim 4, wherein: a light gathering device is arranged above the positive electrode layer (1).
6. The high-temperature solar photovoltaic conversion structure based on photon-enhanced thermionic emission as claimed in claim 5, wherein: the absorption layer (3) is made of GaAs, CdTe, GaN or Si, and the corresponding barrier layer (4) is made of AlGaAs, CdZnTe, AlGaN or diamond.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922090727.4U CN211150576U (en) | 2019-11-28 | 2019-11-28 | High-temperature solar photoelectric conversion structure based on photon-enhanced thermionic emission |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922090727.4U CN211150576U (en) | 2019-11-28 | 2019-11-28 | High-temperature solar photoelectric conversion structure based on photon-enhanced thermionic emission |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211150576U true CN211150576U (en) | 2020-07-31 |
Family
ID=71777268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922090727.4U Withdrawn - After Issue CN211150576U (en) | 2019-11-28 | 2019-11-28 | High-temperature solar photoelectric conversion structure based on photon-enhanced thermionic emission |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211150576U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854231A (en) * | 2019-11-28 | 2020-02-28 | 中国科学院西安光学精密机械研究所 | High-temperature solar photoelectric conversion structure based on photon-enhanced thermionic emission |
-
2019
- 2019-11-28 CN CN201922090727.4U patent/CN211150576U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854231A (en) * | 2019-11-28 | 2020-02-28 | 中国科学院西安光学精密机械研究所 | High-temperature solar photoelectric conversion structure based on photon-enhanced thermionic emission |
| CN110854231B (en) * | 2019-11-28 | 2024-05-31 | 中国科学院西安光学精密机械研究所 | High-temperature solar photoelectric conversion structure based on photon enhanced thermionic emission |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Brown et al. | Third generation photovoltaics | |
| US5911839A (en) | High efficiency GaInP NIP solar cells | |
| US20090145477A1 (en) | Solar cell | |
| EP2335268A2 (en) | Photon enhanced thermionic emission | |
| JP2010531064A (en) | Single PN junction tandem photovoltaic device | |
| CN103560155A (en) | Compound semiconductor heterojunction solar cell based on crystalline silicon materials | |
| CN210073891U (en) | Multi-junction solar cell capable of improving anti-irradiation performance | |
| CN101431117A (en) | Multi-junction solar cell with doping blocking layer | |
| US20070227587A1 (en) | Photoelectric Cells Utilizing Accumulation Barriers For Charge Transport | |
| CN211150576U (en) | High-temperature solar photoelectric conversion structure based on photon-enhanced thermionic emission | |
| CN111430493B (en) | Multi-junction solar cell and power supply equipment | |
| CN111146305A (en) | Solar cell | |
| JP2011077295A (en) | Junction type solar cell | |
| CN110854231B (en) | High-temperature solar photoelectric conversion structure based on photon enhanced thermionic emission | |
| JP3206350B2 (en) | Solar cell | |
| CN112038419B (en) | Manufacturing method of photovoltaic cell with laser energy supply and solar power generation functions | |
| CN211404511U (en) | All-solid-state photon enhanced thermionic emission photoelectric conversion device with nano spacer layer | |
| RU2399118C1 (en) | Photoelectric converter based on nonplanar semiconductor structure | |
| CN103579388B (en) | A kind of solar cell containing double aluminum back surface fields | |
| KR101960265B1 (en) | Manufacturing Method of Solar Cell for Luminescent Solar Concentrator Device and Luminescent Solar Concentrator Devices using Solar Cell thereby | |
| Shahryari et al. | Efficiency enhancement of heterojunction IBC solar cell: surface passivation | |
| WO2022142995A1 (en) | Silicon carbide photovoltaic device | |
| CN217955889U (en) | Laminated battery for improving current-carrying output | |
| CN219719002U (en) | Perovskite-crystalline silicon laminated solar cell structure | |
| CN110970511B (en) | All-solid-state photon enhanced thermionic emission photoelectric conversion device with nanometer spacing layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20200731 Effective date of abandoning: 20240531 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20200731 Effective date of abandoning: 20240531 |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |