CN211367800U - Upper inclined and lower straight water cooling jacket for large-size straight pulling single crystal - Google Patents
Upper inclined and lower straight water cooling jacket for large-size straight pulling single crystal Download PDFInfo
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- CN211367800U CN211367800U CN201922266606.0U CN201922266606U CN211367800U CN 211367800 U CN211367800 U CN 211367800U CN 201922266606 U CN201922266606 U CN 201922266606U CN 211367800 U CN211367800 U CN 211367800U
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Abstract
The utility model provides an upper inclined and lower straight water cooling jacket for large-size straight pulling single crystal, which comprises a cylindrical body, wherein the body comprises an upper section part and a lower section part which are integrally connected, the upper section part is arranged in an inclined way, and the diameter of the upper port of the upper section part is larger than that of the lower port of the upper section part; the lower section part is vertically arranged. The utility model provides a water cooling jacket, especially, be exclusively used in the drawing of jumbo size single crystal, it is unreasonable to have solved prior art normal water cooling jacket structural design, causes the single crystal to drop easily, appears leaking silicon, spouts the technical problem of silicon, improves the observation sight of CCD camera, effectively increases the water cooling area of single crystal, reduces the single crystal defect, improves the single crystal quality.
Description
Technical Field
The utility model belongs to the technical field of the used accessory of czochralski silicon single crystal stove, especially, relate to a jumbo size czochralski silicon is with straight formula water cooling jacket from top to bottom.
Background
At present, two main growth modes of single crystal are respectively a zone melting method and a Czochralski method, no matter which growth mode is adopted, the temperature requirement in the whole growth process of the single crystal silicon is very strict, the working temperature in a furnace is about 1400 ℃, the pulled single crystal is not easy to cool under the high-temperature environment, the thermal stress generated by the growth of the single crystal is balanced, the growth time of the single crystal is influenced, and therefore, a water cooling structure is required to be additionally arranged in the early-stage region of the growth of the single crystal.
Chinese patent publication CN207035852U proposes a conical water-cooling jacket device for czochralski furnace, which has several problems as follows: firstly, the water cooling jacket structure used by the straight pulling single crystal furnace with the structure is suitable for pulling the small-size diameter single crystal silicon rod, the minimum inner aperture of the water cooling jacket is too small to meet the pulling safety distance of the large-size single crystal silicon rod with the diameter of 310mm, and the mechanical vibration of the single crystal furnace equipment easily causes the single crystal silicon rod to touch the inner wall of the water cooling jacket, so that the single crystal silicon falls off, and the danger of silicon leakage and silicon spraying is caused. Secondly, the structure easily gathers argon gas in the lower section, further increases the blowing strength of the single crystal silicon rod, and is difficult to crystallize. Moreover, the thermal field required for the large-size silicon single crystal rod is large in size, the temperature stabilizing temperature is not easy to control, the crucible position is easy to be interfered by other factors, and the observation of the distance between the lower edge of the guide cylinder and a silicon liquid interface by a CCD camera on the outer wall of the single crystal furnace body is hindered according to the structure of the existing water cooling jacket, so that the temperature stabilizing crucible position cannot be accurately judged, and the single crystal pulling quality is influenced.
SUMMERY OF THE UTILITY MODEL
The utility model provides a jumbo size czochralski crystal is with straight formula water cooling jacket from top to bottom, be applicable to especially that the diameter is 240 supplyes drawing of 310mm jumbo size single crystal, it is unreasonable to have solved among the prior art water cooling jacket structural design, causes the single crystal to drop easily, appears leaking the silicon, spouts the technical problem of silicon, improves the observation sight of CCD camera, effectively increases the water cooling area of single crystal, reduces the single crystal defect, improves the single crystal quality.
In order to solve the technical problem, the utility model discloses a technical scheme is:
an upper inclined and lower straight water cooling jacket for large-size Czochralski single crystals comprises a cylindrical body, wherein the body comprises an upper section part and a lower section part which are integrally connected, the upper section part is arranged in an inclined manner, and the diameter of an upper port of the upper section part is larger than that of a lower port of the upper section part; the lower section part is vertically arranged.
Furthermore, the included angle of the generatrix of the upper section part is 30-50 degrees.
Further, the height of the upper section part is greater than that of the lower section part; the upper section height is greater than half the body height and less than 4/5 of the body height.
Further, the height of the body is 500-800 mm.
Further, the inner diameter of the upper port of the upper section part is 400-500 mm; the inner diameter of the lower port of the upper section part is 350-450 mm.
Furthermore, annular upper cold water channels and annular lower cold water channels are respectively arranged between the side walls of the upper section part and the lower section part along the weft direction; the diameters of the upper cold water channel and the lower cold water channel are the same and are within the range of 5-10 mm.
Furthermore, the upper cold water channel and the lower cold water channel are both of horizontal annular structures.
Furthermore, a water inlet pipe and a water outlet pipe which are symmetrically arranged are arranged between the upper section part and the side wall of the lower section part along the warp direction, and the water inlet pipe and the water outlet pipe respectively penetrate through the upper section part of the upper cold water channel and the upper section part of the lower cold water channel.
Further, a water inlet and a water outlet are arranged on the upper end face of the upper section part, and the water inlet and the water outlet are respectively communicated with the water inlet pipe and the water outlet pipe; the water inlet and the water outlet are arranged at two ends of any diameter of the upper end surface of the upper section part.
Furthermore, the water cooling jacket is suitable for the single crystal silicon rod with the diameter of 240-310 mm.
1. The water cooling jacket with the inclined upper part and the straight lower part is suitable for drawing large-size single crystals with the diameter of 240 plus 310mm, has reasonable integral structure, can increase the water cooling area of the single crystals and improves the heat dissipation area of the single crystals; for the straight wall type structure at the lower section part, especially when the growth height of the silicon single crystal rod is about 200mm, the silicon single crystal rod can be uniformly cooled, the silicon single crystal rod can be prevented from being cracked due to too fast cold and hot alternation, and meanwhile, the risks of silicon leakage and silicon spraying are avoided.
2. The water-cooling jacket of the structure adopts the structure that the upper section part is the inclined wall, so that the observation visual field range of the CCD camera can be effectively improved, enough space is reserved in the furnace body to monitor the growth process of the single crystal, and the observation operation is more convenient.
3. When the argon gas flow passes through the inner wall of the water cooling jacket, a balanced driving force can be formed at the joint of the upper section part and the lower section part of the water cooling jacket, so that the cooling amplitude is constant, the argon gas flowing speed is balanced and slow, the change of the thermal stress in the crystal of the silicon single crystal rod is constant, and the risk of single crystal explosion caused by unbalanced and overlarge thermal stress of the crystal is reduced.
4. The temperature of the furnace cover part can be effectively reduced for the water cooling structure with the inclined wall type at the upper section part, argon in the furnace cover is concentrated in a region where the single crystal grows, the flow of the argon is increased when the argon enters the water cooling structure with the straight wall type at the lower section part, the crystallization latent heat generated in the growth process of the single crystal is taken away, and the growth rate of the single crystal silicon rod crystal can be effectively improved; the lower end surface of the lower section part is more attached to the outer wall surface of the single crystal silicon rod, so that the longitudinal temperature distribution of the crystal is more beneficial to the growth of the single crystal.
Drawings
FIG. 1 is a schematic structural view of a water cooling jacket according to an embodiment of the present invention;
FIG. 2 is a schematic structural view of a water-cooling jacket in a single crystal furnace according to an embodiment of the present invention;
FIG. 3 is a top view of a water jacket according to an embodiment of the present invention;
fig. 4 is a cross-sectional view of an upper cold water channel and a lower cold water channel according to an embodiment of the present invention.
In the figure:
10. water cooling jacket 11, upper section 12, lower section
13. Upper cold water channel 14, lower cold water channel 15 and water inlet pipe
16. A water discharge pipe 17, a water inlet 18 and a water discharge outlet
20. Draft tube 30, silicon rod 40 and CCD camera
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The utility model provides an upper inclined lower straight water cooling jacket 10 for large-size straight pulling single crystal, which is suitable for drawing a single crystal silicon rod 30 with the diameter of 240 plus 310mm as shown in figure 1, and comprises a cylindrical body, wherein the body comprises an upper section part 11 and a lower section part 12 which are integrally connected, the upper section part 11 is a frustum structure which is obliquely arranged, and the diameter of the upper port of the upper section part 11 is larger than that of the lower port of the upper section part; the lower section 12 is a vertically arranged straight cylinder structure, and the upper section 11 and the lower section 12 are integrally connected. The water cooling jacket 10 with a straight-up and inclined-down structure is arranged on the inner side of the guide shell 20, as shown in fig. 2, the upper section 11 of the water cooling jacket 10 is arranged close to the upper end of the guide shell 20, the lower section 12 is arranged close to the inner side of the bottom of the guide shell 20, a heat preservation carbon felt is arranged between the water cooling jacket 10 and the guide shell 20, the water cooling jacket 10, the guide shell 20 and the carbon felt are all positioned right above the quartz crucible and are all arranged in the furnace body of the single crystal furnace, a CCD camera 40 is arranged on the outer wall of the upper end of the single crystal furnace, and the growing silicon rod 30 penetrates through the guide shell 20 and the water cooling jacket 10.
Specifically, as shown in fig. 1, an included angle θ of a bus of an upper section 11 of the water cooling jacket 10 is 30-50 °, and if the included angle θ of the bus of the upper section 11 of the water cooling jacket 10 is greater than 50 °, the connection gradient between the upper section 11 and a lower section 12 of the water cooling jacket 10 is changed too much, so that argon passing through the lower section 12 of the water cooling jacket 10 is easily gathered at a crystallization front, and an argon flow passing through the lower section 12 is increased sharply, which is not beneficial to heat exchange between the argon flow and crystals and affects crystal growth; if the included angle theta of the lower section part 12 close to the central axis of the body is smaller than 30 degrees, the observation of the distance between the lower edge of the guide cylinder 20 and the silicon liquid interface by the CCD camera 40 in the temperature stabilizing process can be influenced, so that the temperature stabilizing crucible position cannot be accurately judged, and the single crystal drawing quality is influenced. Therefore, on the premise of not influencing the observation of the CCD camera 40, the optimal range of the included angle theta of the generatrix of the upper section 11 of the water cooling jacket 10 is 30-50 degrees. Meanwhile, the lower section 12 in the angle range enables heat exchange between the passing argon gas flow and the single crystal silicon rod 30 to be more uniform, so that the cooling amplitude of the single crystal silicon rod 30 is slower, the heat balance of the single crystal silicon rod 30 in the crystal growth process can be further kept, the crystallization quality of the single crystal silicon rod is improved, and the purpose of improving the quality of the single crystal silicon rod is achieved.
Further, the height H of the water cooling jacket 10 is 800mm for 500-. The inner diameter D1 of the upper port of the upper section 11 is 400-450 mm, and the inner diameter D2 of the lower port of the upper section 11 is 350-450mm, i.e. the inner diameters of the upper and lower ports of the lower section 12 are the same as the inner diameter D2 of the lower port of the upper section 11, which are both 350-450 mm. The diameter of the silicon single crystal rod 30 is large, the heat dissipation of the silicon single crystal rod is slow, and the thermal stress in the silicon single crystal rod is large, so that the water cooling effect of the outer wall of the silicon single crystal rod 30 needs to be increased, the connection mode of the water cooling jacket 10 and the single crystal furnace body in the embodiment is kept unchanged, the water cooling area with the longitudinal height is increased by the obliquely arranged upper section part 11 and the vertically arranged lower section part 12, and then the cooling area of the water cooling jacket 10 is increased, so that the heat dissipation speed of the silicon single crystal rod 30 can be effectively increased, the internal thermal stress of the silicon single crystal rod is reduced, the. For the lower section 12 of the straight-wall structure, especially when the initial growth height of the single crystal silicon rod is within 200mm, the single crystal silicon rod 30 can be uniformly cooled, so that the single crystal silicon rod 30 is prevented from being burst due to too fast alternating of cold and heat, and meanwhile, the risks of silicon leakage and silicon spraying are avoided. The vertically arranged upper section 11 can better absorb the heat transferred out from the single crystal silicon rod 30, and the uniformity of cooling the single crystal silicon rod 30 is ensured; the obliquely arranged upper section 11 is gradually close to the single crystal silicon rod 30, so that the cooling effect on the single crystal silicon rod 30 can be further enhanced, particularly, the conversion speed of a solid-liquid interface can be increased in an equal diameter stage, the pulling speed of the single crystal silicon rod 30 is increased, the longitudinal temperature gradient of crystals of the single crystal silicon rod 30 is further improved, the defects generated in the growth process of the single crystal can be effectively reduced, and the quality of the single crystal is improved.
In this embodiment, the water cooling jacket 10 with a straight structure is dismounted, and the opening of the upper section 11 is larger than the opening of the lower port of the lower section 12, so that the observation visual field range of the CCD camera 40 can be effectively improved, and the furnace body has enough space to monitor the growth process of the single crystal, and the observation operation is more convenient. Meanwhile, when the argon gas flow passes through the inner wall of the water cooling jacket 10, a balanced driving force can be formed at the joint of the upper section part 11 and the lower section part 12 of the water cooling jacket 10, so that the cooling amplitude is constant, the argon gas flowing speed is balanced and slow, the internal thermal stress change of the crystal of the single crystal silicon rod 30 is constant, and the risk of single crystal explosion caused by unbalanced and overlarge thermal stress of the crystal is reduced. The inclined wall type water cooling structure of the upper section part 11 can effectively reduce the temperature of the furnace cover part, and the argon in the furnace cover is concentrated in the region where the single crystal grows, so that the flow of the argon when the argon enters the lower section part 12 is increased, the latent heat of crystallization generated in the process of growing the single crystal is taken away, and the crystal growth rate of the silicon single crystal rod 30 can be effectively improved; the lower end surface of the water-cooling structure of the lower section part 12 is more attached to the outer wall surface of the single crystal silicon rod, so that the longitudinal temperature distribution of the crystal is more beneficial to the growth of the single crystal.
Further, as shown in fig. 3 and 4, a cooling water channel is arranged between the side walls of the upper section 11 and the lower section 12, an annular upper cooling water channel 13 and an annular lower cooling water channel 14 are respectively arranged along the weft direction, and the diameters of the upper cooling water channel 13 and the lower cooling water channel 14 are the same and range from 5 mm to 10 mm. In the present embodiment, the upper cooling water passage 13 and the lower cooling water passage 14 are each a horizontal ring structure. Of course, the upper cooling water channel 13 and the lower cooling water channel 14 may both be spiral structures, and may also be a combination of a horizontal ring structure and a spiral structure, all of which are within the protection scope of the present invention. The upper cooling water channel 13 and the lower cooling water channel 14 which are arranged in the horizontal annular structure can ensure the uniformity of the cooling effect on the single crystal silicon rod 30 and improve the overall cooling efficiency.
Furthermore, a water inlet pipe 15 and a water outlet pipe 16 are symmetrically arranged on the cooling water channel between the side walls of the upper section 11 and the lower section 12 along the warp direction, and the water inlet pipe 15 and the water outlet pipe 16 respectively penetrate through the upper cooling water channel 13 and the lower cooling water channel 14. A water inlet 17 and a water outlet 18 are arranged on the upper end surface of the upper section part 11, and the water inlet 17 and the water outlet 18 are respectively communicated with a water inlet pipe 15 and a water outlet pipe 16; the water inlet 17 and the water outlet 18 are respectively arranged at two ends of any diameter of the upper end surface of the upper section 11.
The working process in this embodiment: the cooling water is poured into the water inlet pipe 15 from the water inlet port 17, the cooling water circulates around the upper section 11 and the lower section 12 along the upper cooling water channel 13 and the lower cooling water channel 14 in sequence, the cooling water takes away heat radiated from the monocrystalline silicon rod 30 to the inner wall of the water cooling jacket 10, the heat flows into the water discharge pipe 16 and is discharged from the water discharge port 18, and the cooling area is increased. On the premise of not influencing the observation of the CCD camera 40, the heat dissipation speed of the silicon rod 30 is improved, the internal thermal stress of the silicon rod 30 is reduced, the dislocation can be further reduced, and the defect of the single crystal is improved; meanwhile, the pulling speed of the silicon single crystal rod 30 in the growth process is effectively increased, the defects generated in the growth process of the single crystal are reduced, and the quality of the single crystal is improved.
1. The water cooling jacket with the inclined upper part and the straight lower part is suitable for drawing large-size single crystals with the diameter of 240 plus 310mm, has reasonable integral structure, can increase the water cooling area of the single crystals and improves the heat dissipation area of the single crystals; for the straight wall type structure at the lower section part, especially when the growth height of the silicon single crystal rod is about 200mm, the silicon single crystal rod can be uniformly cooled, the silicon single crystal rod can be prevented from being cracked due to too fast cold and hot alternation, and meanwhile, the risks of silicon leakage and silicon spraying are avoided.
2. The water-cooling jacket of the structure adopts the structure that the upper section part is the inclined wall, so that the observation visual field range of the CCD camera can be effectively improved, enough space is reserved in the furnace body to monitor the growth process of the single crystal, and the observation operation is more convenient.
3. When the argon gas flow passes through the inner wall of the water cooling jacket, a balanced driving force can be formed at the joint of the upper section part and the lower section part of the water cooling jacket, so that the cooling amplitude is constant, the argon gas flowing speed is balanced and slow, the change of the thermal stress in the crystal of the silicon single crystal rod is constant, and the risk of single crystal explosion caused by unbalanced and overlarge thermal stress of the crystal is reduced.
4. The temperature of the furnace cover part can be effectively reduced for the water cooling structure with the inclined wall type at the upper section part, argon in the furnace cover is concentrated in a region where the single crystal grows, the flow of the argon is increased when the argon enters the water cooling structure with the straight wall type at the lower section part, the crystallization latent heat generated in the growth process of the single crystal is taken away, and the growth rate of the single crystal silicon rod crystal can be effectively improved; the lower end surface of the lower section part is more attached to the outer wall surface of the single crystal silicon rod, so that the longitudinal temperature distribution of the crystal is more beneficial to the growth of the single crystal.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention, and should not be construed as limiting the scope of the present invention. All the equivalent changes and improvements made according to the application scope of the present invention should still fall within the patent coverage of the present invention.
Claims (10)
1. An upper inclined and lower straight water cooling jacket for large-size straight pulling single crystals is characterized by comprising a cylindrical body, wherein the body comprises an upper section part and a lower section part which are integrally connected, the upper section part is arranged in an inclined manner, and the diameter of an upper port of the upper section part is larger than that of a lower port of the upper section part; the lower section part is vertically arranged.
2. The water jacket with the inclined upper part and the straight lower part for the large-size straight pulling single crystal as claimed in claim 1, wherein the included angle of the generatrix of the upper section is 30-50 °.
3. The inclined upper and lower water cooling jacket for the large-size czochralski single crystal as claimed in claim 1 or 2, wherein the height of the upper section is greater than the height of the lower section; the upper section height is greater than half the body height and less than 4/5 of the body height.
4. The water cooling jacket with the inclined upper part and the straight lower part for pulling the large-size Czochralski single crystal as claimed in claim 3, wherein the height of the body is 500-800 mm.
5. The water cooling jacket with the inclined upper part and the straight lower part for pulling the large-size Czochralski single crystal as claimed in claim 4, wherein the inner diameter of the upper port of the upper section part is 400-500 mm; the inner diameter of the lower port of the upper section part is 350-450 mm.
6. The water cooling jacket for pulling a large-size Czochralski single crystal according to any one of claims 1-2 and 4-5, wherein annular upper and lower cooling water channels are respectively provided in the middle of the side walls of the upper and lower sections along the weft direction; the diameters of the upper cold water channel and the lower cold water channel are the same and are within the range of 5-10 mm.
7. The inclined upper and lower water cooling jacket for large-sized czochralski single crystal as claimed in claim 6, wherein said upper and lower cooling water passages are both horizontal ring-shaped.
8. The water cooling jacket with inclined upper part and straight lower part for large size straight pulling single crystal as claimed in claim 7, wherein a water inlet pipe and a water outlet pipe are symmetrically arranged along the longitude direction between the side walls of the upper section and the lower section, and the water inlet pipe and the water outlet pipe are respectively arranged through the upper section of the upper cooling water channel and the upper section of the lower cooling water channel.
9. The water cooling jacket with the inclined upper part and the straight lower part for the large-size czochralski single crystal as claimed in claim 8, wherein a water inlet and a water outlet are arranged on the upper end surface of the upper section, and the water inlet and the water outlet are respectively communicated with the water inlet pipe and the water outlet pipe; the water inlet and the water outlet are arranged at two ends of any diameter of the upper end surface of the upper section part.
10. The upward-inclined downward-straight water cooling jacket for the large-size Czochralski single crystal as claimed in any one of claims 1-2, 4-5 and 7-9, wherein the water cooling jacket is suitable for a single crystal silicon rod with a diameter of 240-310 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922266606.0U CN211367800U (en) | 2019-12-17 | 2019-12-17 | Upper inclined and lower straight water cooling jacket for large-size straight pulling single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922266606.0U CN211367800U (en) | 2019-12-17 | 2019-12-17 | Upper inclined and lower straight water cooling jacket for large-size straight pulling single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211367800U true CN211367800U (en) | 2020-08-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922266606.0U Active CN211367800U (en) | 2019-12-17 | 2019-12-17 | Upper inclined and lower straight water cooling jacket for large-size straight pulling single crystal |
Country Status (1)
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|---|---|
| CN (1) | CN211367800U (en) |
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- 2019-12-17 CN CN201922266606.0U patent/CN211367800U/en active Active
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