CN103741208A - Pulling method crystal growth furnace - Google Patents
Pulling method crystal growth furnace Download PDFInfo
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- CN103741208A CN103741208A CN201310743129.7A CN201310743129A CN103741208A CN 103741208 A CN103741208 A CN 103741208A CN 201310743129 A CN201310743129 A CN 201310743129A CN 103741208 A CN103741208 A CN 103741208A
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Abstract
The invention discloses a pulling method crystal growth furnace. The pulling method crystal growth furnace is characterized by comprising a furnace body and a crucible (2), wherein the interior of the furnace body is hollow so as to form a furnace cavity (5), the crucible (2) is arranged at the center of the furnace cavity (5), and the crucible (2) is connected with a seed crystal rod (4) which is coaxially arranged in the furnace cavity (5) and used for growing crystals (3) in the crucible (2); and the pulling method crystal growth furnace is characterized in that the inner wall of the furnace cavity (2) at the upper part of the crucible (2) has a certain conicity and a round table cylinder structure is further formed. The growth furnace disclosed by the invention can effectively control the three-dimensional effect of flow and heat transfer in the pulling method furnace cavity, organize a relatively good temperature environment around the crystals and simultaneously form a relatively good temperature gradient at a solid-liquid interface in the growth process of the crystals. The novel furnace cavity structure can reduce the production of dislocation or rupture in the growth process of the crystals and improve the quality of the crystals.
Description
Technical field
The invention belongs to growing semiconductor crystal equipment technical field, be specifically related to a kind of method of crystal growth by crystal pulling stove.
Background technology
Due to the semi-conductive use of widespread use, particularly high-melting-point of semiconductor crystal, crystal pulling method occupies critical role as the effective high-melting-point method for growing semiconductor crystal of one in crystal production at present.
As shown in Figure 1, a kind of method of crystal growth by crystal pulling stove of the prior art, comprise body of heater, be positioned at the crucible 2 of body of heater furnace chamber 5 central authorities, in crucible 2, there is the crystal 3 of growth, seed rod 4 with the coaxial setting of described furnace chamber 5, its one end contacts for crystal 3 and grows with crystal 3, the other end stretches out from body of heater top, in furnace chamber 5, be positioned at crucible 2 bottoms and be provided with domain thermal baffle 1, body of heater furnace chamber is cylindrical structure, body of heater periphery is coated with lagging material with heat insulation with the external world, and body of heater periphery is provided with the coil 8 for induction heating.On bottom of furnace body 9 and top 7, all starting has the hole communicating with furnace chamber 5.
High quality crystal growth needs is strictly controlled the process of cooling in crystal growing process, has cooling draught from bottom and upper hole, to send into respectively in method of crystal growth by crystal pulling process, then through top, flows out.Structurally because upper air entrance is hole arranged apart, and lower stream of airflow entrance is annular, and it is not three-dimensional symmetrical that such air current composition mode makes gas flow and temperature distribution in whole furnace chamber.Meanwhile, in furnace chamber, gas actual flow state is turbulent flow, and two aspect factors have caused the three-dimensional asymmetry of more significant temperature distribution.Under this environment, cooling cylinder crystal can not obtain three-dimensional symmetrical temperature distribution, so easily produce larger stress in crystal, causes a large amount of dislocations or Crystal Breakup, reduces crystal mass.And it is mobile to organize middle and upper part cooling gas can grow distance downwards in furnace chamber at this gas, at crystal wall, there is larger thermograde at place, the generation that this gradient has also been aggravated crystal Dislocations or broken.
Summary of the invention
For above defect or the Improvement requirement of prior art, the invention provides a kind of method of crystal growth by crystal pulling furnace chamber, can effectively reduce the three-dismensional effect of gas flow and temperature distribution in furnace chamber, can reduce the thermograde at solid-liquid interface place in crystal growing process simultaneously, reduce the generation of crystal top cracking, crystal ingot is in a suitable cooling temperature environment.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of method of crystal growth by crystal pulling stove, is characterized in that, comprises inner hollow and forms the body of heater of furnace chamber, is placed in the crucible at furnace chamber center, and this crucible is connected with a seed rod being coaxially placed in furnace chamber, for growing crystal in crucible; It is characterized in that, the described furnace chamber inwall that is positioned at described crucible top has certain taper, forms frustum cone cylinder body structure.
As improvement of the present invention, the furnace roof of described furnace chamber and furnace bottom are provided with the hole communicating with described furnace chamber, for passing into air-flow, to take away gaseous impurities in crystal growing process, realize cooling to crystal simultaneously.
As improvement of the present invention, described furnace chamber inwall is positioned at the described frustum cone cylinder body structure of crucible upper space to furnace chamber top, and its maximum length may extend to maximum crystal ingot At The Height.
As improvement of the present invention, described frustum cone cylinder body structure is less than away from the end area of crucible the area that relatively approaches crucible end relatively.
As improvement of the present invention, described furnace chamber inherence is positioned at described crucible 2 bottoms and is provided with chassis thermal baffle 1, heat insulation for bottom of furnace body.
As improvement of the present invention, described body of heater outside is coated with lagging material, heat insulation for body of heater.
As improvement of the present invention, described body of heater outer setting is useful on the coil of induction heating.
In the present invention, the upper end of original cylindrical crystal pulling method crystal furnace inner chamber is designed to a round platform, its length maximum may extend to maximum crystal ingot At The Height.Through computational analysis, this structure not only can effectively be controlled the flow state in cavity, effectively reduce the triflux in original furnace chamber, make to be in good cooling environment in crystal growing process, reduce the possibility that crystal breaks, and in crystal growing process, the thermograde at solid-liquid interface place also can be controlled preferably.
Growth furnace of the present invention can effectively be controlled the three-dismensional effect of flowing heat transfer in crystal pulling method furnace chamber, in the good temperature environment of crystal surrounding tissue, makes solid-liquid interface in crystal growing process be in good thermograde simultaneously.The generation that this novel furnace cavity structure can reduce crystal growing process Dislocations or break, improves crystal mass.
Accompanying drawing explanation
Fig. 1 is the structural representation of method of crystal growth by crystal pulling stove of the prior art;
Fig. 2 is according to the structural representation of the method for crystal growth by crystal pulling stove of the embodiment of the present invention.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
As shown in Figure 2, the method of crystal growth by crystal pulling stove of the present embodiment, it comprises body of heater, this body of heater inner hollow forms furnace chamber 5, the crystal 3 of chassis thermal baffle 1, metallic crucible 2, crucible 2 interior growths, seed rod 4 is arranged in furnace chamber 5, and furnace chamber 5 peripheries are enclosed with lagging material 6, for the coil 8 of induction heating, is arranged on body of heater periphery.
Crucible 2 is placed in furnace chamber center, and the seed rod 4 that this crucible 2 and is coaxially placed in furnace chamber 5 is connected, at the interior growing crystal 3 of crucible 2.
Crucible 2 bottoms are provided with chassis thermal baffle 1, heat insulation for bottom of furnace body, and body of heater outside is coated with lagging material 6, heat insulation for body of heater.
Wherein, furnace chamber 5 inwalls that are positioned at crucible 2 tops are tube structures with certain taper, wherein relatively away from the end area of crucible 2, are less than the end (being expressed as up-small and down-big) that relatively approaches crucible 2 from figure, form frustum cone cylinder body structure.
In crystal growing process, furnace bottom 9 and furnace roof portion 7 have air-flow and flow into, and last gas flows out from top 7.Wherein bottom air-flow is realized cooling to crystal in the gaseous impurities of taking away in crystal growing process, and upper air is mainly as the cooling draught of crystal growing process.
At traditional structure as shown in Figure 1, the strong crystals cooled of upper end entrance cooling gas, hot gas flow flows and the three-dimensional character of furnace binding in addition, makes easily to produce and assemble excessive stress in crystal, causes crystal Dislocations and the generation of breaking.Growth furnace of the present invention can form on furnace chamber top stronger flowing, whole body of heater interior temperature distribution is relatively relaxed, reduced the cooling temperature of crystal, while is due to the intense mixing of gas, the three-dimensional asymmetry in temperature field in furnace chamber is inhibited, and this has also further reduced the stress in crystal growing process.This improvement design can reduce the thermograde of crystal upper space in addition, and then reduces the thermograde in solid-liquid interface in crystal growing process, thereby guarantees the stability of crystal growth.
By theoretical analysis and experiment, also find, the different taperings of round platform, different heights can play flow field control in various degree, and then crystal is around in the cooling environment of differing temps.Different taperings can affect the heat loss ratio of upper of furnace body simultaneously, controls the thermograde at solid-liquid interface place in crystal, changes crystalline growth velocity.This provides a kind of new regulation measure for crystal growth rate in method of crystal growth by crystal pulling.
Those skilled in the art will readily understand; the foregoing is only preferred embodiment of the present invention; not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (7)
1. a method of crystal growth by crystal pulling stove, it is characterized in that, comprise inner hollow and form the body of heater of furnace chamber (5), be placed in the crucible (2) at this furnace chamber (5) center, the seed rod (4) that this crucible (2) and is coaxially placed in furnace chamber (5) is connected, for growing crystal (3) in crucible (3); It is characterized in that, described furnace chamber (2) inwall that is positioned at described crucible (2) top has certain taper, forms frustum cone cylinder body structure.
2. a kind of method of crystal growth by crystal pulling stove according to claim 1, it is characterized in that, furnace roof (7) and the furnace bottom (9) of described furnace chamber (5) are provided with the hole communicating with described furnace chamber (5), be used for passing into air-flow, to take away gaseous impurities in crystal growing process and to realize cooling to crystal.
3. a kind of method of crystal growth by crystal pulling stove according to claim 1, is characterized in that, described furnace chamber inwall is positioned at the described frustum cone cylinder body structure of crucible upper space to furnace chamber top, and its maximum length may extend to maximum crystal ingot At The Height.
4. according to a kind of method of crystal growth by crystal pulling stove described in any one in claim 1-3, it is characterized in that, described frustum cone cylinder body structure is less than away from the end area of crucible the area that relatively approaches crucible end relatively.
5. according to a kind of method of crystal growth by crystal pulling stove described in any one in claim 1-3, it is characterized in that, described furnace chamber (5) inherence is positioned at described crucible (2) bottom and is provided with chassis thermal baffle (1), heat insulation for bottom of furnace body.
6. according to a kind of method of crystal growth by crystal pulling stove described in any one in claim 1-3, it is characterized in that, described body of heater outside is coated with lagging material (6), heat insulation for body of heater.
7. according to a kind of method of crystal growth by crystal pulling stove described in any one in claim 1-3, it is characterized in that, described body of heater outer setting is useful on the coil (8) of induction heating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310743129.7A CN103741208A (en) | 2013-12-28 | 2013-12-28 | Pulling method crystal growth furnace |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310743129.7A CN103741208A (en) | 2013-12-28 | 2013-12-28 | Pulling method crystal growth furnace |
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| CN103741208A true CN103741208A (en) | 2014-04-23 |
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| CN201310743129.7A Pending CN103741208A (en) | 2013-12-28 | 2013-12-28 | Pulling method crystal growth furnace |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104562185A (en) * | 2014-12-26 | 2015-04-29 | 华中科技大学 | Czochralski crystal growth furnace |
| CN104611764A (en) * | 2015-01-21 | 2015-05-13 | 华中科技大学 | Micro-pulling-down crystal growing furnace |
| CN108893780A (en) * | 2018-07-19 | 2018-11-27 | 中山大学 | A kind of crystal growing apparatus and the double-doped LuAG crystal of a kind of Er, Yb and preparation method thereof |
-
2013
- 2013-12-28 CN CN201310743129.7A patent/CN103741208A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104562185A (en) * | 2014-12-26 | 2015-04-29 | 华中科技大学 | Czochralski crystal growth furnace |
| CN104562185B (en) * | 2014-12-26 | 2017-05-10 | 华中科技大学 | Czochralski crystal growth furnace |
| CN104611764A (en) * | 2015-01-21 | 2015-05-13 | 华中科技大学 | Micro-pulling-down crystal growing furnace |
| CN104611764B (en) * | 2015-01-21 | 2017-10-31 | 华中科技大学 | A kind of micro- downward lifting crystal growing furnace |
| CN108893780A (en) * | 2018-07-19 | 2018-11-27 | 中山大学 | A kind of crystal growing apparatus and the double-doped LuAG crystal of a kind of Er, Yb and preparation method thereof |
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Application publication date: 20140423 |