CN211320079U - Base and semiconductor processing equipment - Google Patents
Base and semiconductor processing equipment Download PDFInfo
- Publication number
- CN211320079U CN211320079U CN202020018923.0U CN202020018923U CN211320079U CN 211320079 U CN211320079 U CN 211320079U CN 202020018923 U CN202020018923 U CN 202020018923U CN 211320079 U CN211320079 U CN 211320079U
- Authority
- CN
- China
- Prior art keywords
- substrate
- base
- annular bearing
- semiconductor processing
- susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The utility model provides a base and semiconductor processing equipment, the base is used for the semiconductor processing equipment, the base surface is provided with the piece placing groove for placing the substrate, the piece placing groove comprises a side surface, a bottom surface and an annular bearing surface for connecting the side surface and the bottom surface, and the annular bearing surface is used for bearing the substrate in a line contact mode; and the vertical distances between the substrate and the edge region and the central region of the bottom surface are the same in the process. The utility model provides a base and semiconductor processing equipment can improve the resistivity homogeneity of technology back substrate, improves the technology result.
Description
Technical Field
The utility model relates to a semiconductor equipment technical field specifically, relates to a base and semiconductor processing equipment.
Background
At present, silicon epitaxial growth equipment for manufacturing semiconductor devices needs to accurately regulate and control a plurality of process parameters to realize higher device performance. In the silicon epitaxial growth process, the base is a component directly contacted with the silicon epitaxial wafer, and the thickness uniformity and symmetry of the silicon epitaxial wafer are ensured by the rotation of the base. In addition, partial heat required in the silicon epitaxial process is transferred to the silicon epitaxial wafer from the base, and the distribution of the thermal field on the silicon epitaxial wafer directly influences the resistivity uniformity of the processed silicon epitaxial wafer. Therefore, the quality of the susceptor design is directly related to the growth quality of the silicon epitaxial wafer.
However, the bottom surface of the wafer groove of the conventional susceptor is a plane, and a silicon epitaxial wafer can be softened at high temperature in the silicon epitaxial growth heating process, so that the distance from the back surface of the silicon epitaxial wafer to the bottom surface of the wafer groove is not uniform, the uniformity of heat conduction is influenced, and the resistivity uniformity of the processed silicon epitaxial wafer is influenced.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at solving one of the technical problem that exists among the prior art at least, provide a base and semiconductor processing equipment, can improve the resistivity homogeneity of technology back substrate, improve the technology result.
The object of the present invention is achieved by providing a susceptor for semiconductor processing equipment, wherein a wafer placing groove for placing a substrate is arranged on the surface of the susceptor, the wafer placing groove comprises a side surface, a bottom surface and an annular bearing surface connecting the side surface and the bottom surface, and the annular bearing surface is used for bearing the substrate in a line contact manner; and the vertical distances between the substrate and the edge region and the central region of the bottom surface are the same in the process.
Preferably, the vertical distance of the bottom surface from the base surface decreases from the edge toward the center.
Preferably, the shape of the bottom surface comprises a spherical surface.
Preferably, the spherical radius of the bottom surface ranges from 15m to 25 m.
Preferably, the height difference between the highest point and the lowest point of the bottom surface in the vertical direction ranges from 1 μm to 250 μm.
Preferably, the annular bearing surface is disposed concentrically with the bottom surface.
Preferably, the annular bearing surface comprises a spherical or ellipsoidal surface.
Preferably, the annular bearing surface is spherical, and the sphere radius of the annular bearing surface ranges from 100mm to 500 mm.
Preferably, the side surface is perpendicular to the surface of the base, and the bottom surface is provided with a support pin hole for the support pin to pass through.
The invention also provides semiconductor processing equipment comprising the pedestal provided by the invention, wherein the pedestal is used for bearing the substrate.
The utility model discloses following beneficial effect has:
the utility model provides a base, through setting up its bottom surface to bearing the substrate with the line contact mode, namely, when the substrate was placed in putting the piece groove, the substrate contacted with annular loading end with the line contact mode to in the course of the technology, when the substrate received the heat that comes from the bottom surface transmission, and produced the center and sunken the deformation downwards, the substrate can move for annular loading end under self action of gravity, made the center of substrate coincide with the center of bottom surface, thereby improved the concentricity of the bottom surface of substrate and base in the course of the technology; and the bottom surface of the base can enable the vertical distances between the substrate and the edge area and the central area of the bottom surface to be the same in the process engineering, so that when the substrate is subjected to heat transferred from the bottom surface and generates downward center concave deformation in the process, the vertical distances between the substrate and the edge area and the central area of the bottom surface can be the same, the heat transferred from the bottom surface is the same in the process everywhere of the substrate, the resistivity uniformity of the substrate after the process is improved, and the process result is improved.
The utility model provides a semiconductor processing equipment with the help of the utility model provides a substrate is born to the base to can improve the resistivity homogeneity of technology back substrate, improve the technology result.
Drawings
Fig. 1 is a schematic structural diagram of a base according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a base according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a base according to an embodiment of the present invention;
description of reference numerals:
1-a base; 2-bottom surface; 3-an annular bearing surface; 4-side; 5-surface; 6-support pin hole.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the base and the semiconductor processing apparatus provided by the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 1-3, the present embodiment provides a susceptor 1 for a semiconductor processing apparatus, a surface 5 of the susceptor 1 is provided with a wafer placing groove for placing a substrate, the wafer placing groove includes a side surface 4, a bottom surface 2 and an annular bearing surface 3 connecting the side surface 4 and the bottom surface 2, the annular bearing surface 3 is used for bearing the substrate in a line contact manner; and the vertical distance between the substrate and the edge region and the central region of the bottom surface 2 is the same during the process.
The susceptor 1 provided by the present embodiment is configured such that the bottom surface 2 can support the substrate in a line contact manner, that is, when the substrate is placed in the sheet placing groove, the substrate is in line contact with the annular carrying surface 3, so that during the process, when the substrate is subjected to the heat transferred from the bottom surface 2 and the center-down deformation is generated, the substrate can move relative to the annular carrying surface 3 under the self-gravity, so that the center of the substrate coincides with the center of the bottom surface 2, thereby improving the concentricity of the substrate and the bottom surface 2 of the susceptor 1 during the process, and the bottom surface 2 of the susceptor 1 can make the vertical distance between the substrate and the edge area and the center area of the bottom surface 2 the same during the process, so that when the substrate is subjected to the heat transferred from the bottom surface 2 and the center-down deformation is generated, the vertical distance between the substrate and the edge area and the center area of the bottom surface 2 the same during the process, therefore, the heat transferred from the bottom surface 2 is the same at all positions of the substrate in the process, the resistivity uniformity of the substrate after the process is improved, and the process result is improved.
In the present embodiment, the vertical distance of the bottom surface from the surface of the base 1 gradually decreases from the edge toward the center. That is, the bottom surface 2 is gradually lowered from the edge toward the center, and the center of the bottom surface 2 is the lowest portion of the entire bottom surface 2 and has a shape that is centrosymmetric with respect to the center of the bottom surface 2. The design is that the substrate is softened when being subjected to heat transferred by the bottom surface 2 in the process, so that the center of the substrate is recessed downwards towards the bottom surface 2 under the action of the gravity of the substrate, the whole substrate is driven to gradually decrease from the edge to the center, and the center of the substrate forms a centrosymmetric shape, therefore, the bottom surface 2 is designed to gradually decrease from the edge to the center, so that the vertical distance between each part of the substrate and the edge area and the central area of the bottom surface 2 in the process is the same, and the heat transferred by each part of the substrate from the bottom surface 2 is the same when the substrate is deformed by heating.
In the present embodiment, the shape of the bottom surface 2 includes a spherical surface shape. However, the shape of the bottom surface 2 is not limited to this, and may be a cone shape, an ellipsoid shape, or the like.
In the present embodiment, the spherical radius of the bottom surface 2 ranges from 15m to 25 m. However, the size of the spherical radius of the bottom surface 2 is not limited thereto, and may be adjusted according to the actual size of the substrate.
In the present embodiment, the height difference between the highest point and the lowest point of the bottom surface 2 in the vertical direction ranges from 1 μm to 250 μm, that is, the height difference between the edge of the bottom surface 2 and the center point of the bottom surface 2 ranges from 1 μm to 250 μm. However, the size of the height difference between the highest point and the lowest point of the bottom surface 2 in the vertical direction is not limited thereto, and may be adjusted according to the actual size of the substrate.
In the present embodiment, the annular bearing surface 3 is disposed concentrically with the bottom surface 2, so as to facilitate the concentric arrangement of the substrate and the bottom surface 2, so as to further improve the concentricity of the substrate and the bottom surface 2, further improve the resistivity uniformity of the substrate after the process, and improve the process result.
In the present embodiment, the annular carrier surface 3 includes a spherical surface or an ellipsoidal surface, so that the annular carrier surface 3 can carry the substrate in a line contact manner. However, the annular bearing surface 3 is not limited thereto, and may be an annular tapered surface.
In the present embodiment, the annular bearing surface 3 is spherical. Because the spherical radii of the segments of the spherical shape are the same, the speed of the substrate sliding on the annular bearing surface 3 at all the circumferential positions is relatively even, so that the substrate can be kept concentric with the bottom surface 2 after sliding, and the concentricity of the substrate and the bottom surface 2 is further improved.
In the present embodiment, the spherical radius of the spherical annular bearing surface 3 ranges from 100mm to 500 mm. However, the size of the spherical radius of the annular bearing surface 3 is not limited thereto, and may be adjusted according to the actual size of the substrate.
In the present embodiment, the side surface 4 is perpendicular to the surface 5 of the base 1, and the bottom surface 2 is provided with support pin holes 6 for the support pins to pass through. In the process, the supporting pins can penetrate through the supporting pin holes 6 and can lift in the supporting pin holes 6 to support the substrate to lift, and the supporting pins transfer the substrate from the mechanical arm to the annular bearing surface 3 or from the annular bearing surface 3 to the mechanical arm through the lifting action.
The embodiment also provides semiconductor processing equipment, which comprises the pedestal 1 provided by the embodiment, wherein the pedestal 1 is used for bearing a substrate.
In the semiconductor processing apparatus provided in this embodiment, the susceptor 1 provided in this embodiment is used to support a substrate, so that the resistivity uniformity of the processed substrate can be improved, and the process result can be improved.
In summary, the present embodiment provides the susceptor 1 and the semiconductor processing apparatus, which can improve the resistivity uniformity of the processed substrate and improve the process result.
It is to be understood that the above embodiments are merely exemplary embodiments that have been employed to illustrate the principles of the present invention, and that the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A pedestal is used for semiconductor processing equipment, and is characterized in that a wafer placing groove for placing a substrate is arranged on the surface of the pedestal, the wafer placing groove comprises a side surface, a bottom surface and an annular bearing surface for connecting the side surface and the bottom surface, and the annular bearing surface is used for bearing the substrate in a line contact manner; and in the process, the vertical distances between the substrate and the edge region and the central region of the bottom surface are the same.
2. The base of claim 1, wherein the vertical distance of the bottom surface from the base surface decreases from the edge toward the center.
3. The susceptor of claim 2, wherein the bottom surface comprises a spherical shape.
4. The pedestal of claim 3, wherein the spherical radius of the bottom surface ranges from 15m to 25 m.
5. The pedestal of any one of claims 1 to 4, wherein a height difference between a highest point and a lowest point of the bottom surface in a vertical direction is in a range of 1 μm to 250 μm.
6. The susceptor of claim 1, wherein the annular bearing surface is disposed concentrically with the bottom surface.
7. The susceptor of claim 6, wherein the annular bearing surface comprises a spherical surface or an ellipsoidal surface.
8. The pedestal of claim 7, wherein the annular bearing surface is spherical, and a spherical radius of the annular bearing surface ranges from 100mm to 500 mm.
9. The base according to claim 1, wherein the side surface is perpendicular to the base surface, and a support pin hole for a support pin to pass through is provided on the bottom surface.
10. A semiconductor processing apparatus comprising a susceptor according to any one of claims 1 to 9 for carrying a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020018923.0U CN211320079U (en) | 2020-01-06 | 2020-01-06 | Base and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020018923.0U CN211320079U (en) | 2020-01-06 | 2020-01-06 | Base and semiconductor processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211320079U true CN211320079U (en) | 2020-08-21 |
Family
ID=72081140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020018923.0U Active CN211320079U (en) | 2020-01-06 | 2020-01-06 | Base and semiconductor processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211320079U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112736013A (en) * | 2020-12-18 | 2021-04-30 | 北京北方华创微电子装备有限公司 | Bearing device and process chamber |
| CN114540948A (en) * | 2022-02-17 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Base in semiconductor processing equipment and semiconductor processing equipment |
-
2020
- 2020-01-06 CN CN202020018923.0U patent/CN211320079U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112736013A (en) * | 2020-12-18 | 2021-04-30 | 北京北方华创微电子装备有限公司 | Bearing device and process chamber |
| CN112736013B (en) * | 2020-12-18 | 2024-02-27 | 北京北方华创微电子装备有限公司 | Bearing device and process chamber |
| CN114540948A (en) * | 2022-02-17 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Base in semiconductor processing equipment and semiconductor processing equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6214122B1 (en) | Rapid thermal processing susceptor | |
| CN211320079U (en) | Base and semiconductor processing equipment | |
| CN100419958C (en) | Susceptor for epitaxial growth and epitaxial growth method | |
| TW460922B (en) | Semiconductor manufacturing apparatus | |
| CN101944479B (en) | Base, film forming device and film forming method | |
| JP2020113603A5 (en) | ||
| KR101432157B1 (en) | Substrate support and apparatus for treating substrate having thereof substrate support | |
| KR100965143B1 (en) | Susceptor unit and apparatus for processing a substrate using it | |
| US20180371640A1 (en) | Wafer supporting mechanism, chemical vapor deposition apparatus, and epitaxial wafer manufacturing method | |
| KR20220052239A (en) | Susceptor for semiconductor substrate processing | |
| JP5504980B2 (en) | Wafer lift rotation mechanism, stage apparatus, and ion implantation apparatus | |
| JP2005260095A (en) | Epitaxial growth apparatus | |
| CN110610877A (en) | Device and method for reducing wafer warping degree and semiconductor equipment | |
| JP2004200678A5 (en) | ||
| TWI698948B (en) | Apparatus and method for processing wafer | |
| JP2014216440A (en) | Chucking plate for semiconductor wafer process | |
| CN111863700A (en) | Tray of semiconductor processing equipment and semiconductor processing equipment | |
| CN216487983U (en) | Bearing assembly, wafer conveying device and wafer heat treatment equipment | |
| TW202002098A (en) | Processing reaction chamber capable of inhibiting chamber volume from enlarging in vertical direction and occupying space | |
| TWI723845B (en) | Apparatus and method for cooling substrate | |
| TW201916215A (en) | Wafer carrier and support structure thereof | |
| TW202037752A (en) | Wafer transfer apparatus, vapor phase growth apparatus, wafer transfer method and method for manufacturing epitaxial silicon wafer | |
| KR20180069383A (en) | Vacuum chuck | |
| JP2015076457A (en) | Substrate processing apparatus | |
| KR20130015614A (en) | Apparatus for treating a substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |