CN112736013A - Bearing device and process chamber - Google Patents
Bearing device and process chamber Download PDFInfo
- Publication number
- CN112736013A CN112736013A CN202011510772.1A CN202011510772A CN112736013A CN 112736013 A CN112736013 A CN 112736013A CN 202011510772 A CN202011510772 A CN 202011510772A CN 112736013 A CN112736013 A CN 112736013A
- Authority
- CN
- China
- Prior art keywords
- workpiece
- processed
- sheet groove
- sheet
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 238000013022 venting Methods 0.000 claims description 3
- 230000033001 locomotion Effects 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 241000282472 Canis lupus familiaris Species 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002893 slag Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- 230000001174 ascending effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 229910001651 emery Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a bearing device and a process chamber, wherein the bearing device is used for a semiconductor process chamber to bear a workpiece to be processed, and comprises: the upper surface of the bearing main body is provided with at least one sheet groove for placing a workpiece to be processed, the longitudinal section of the bottom wall of the sheet groove is arc-shaped, and the diameter of the sheet groove is larger than that of the workpiece to be processed; the stop blocks are arranged at the edge of the sheet groove, are in contact with the periphery of the workpiece to be processed placed in the sheet groove and are used for limiting the workpiece to be processed to move in the sheet groove along the radial direction. According to the invention, at least three stop blocks are arranged on the inner edge of the wafer groove, and the stop blocks are in contact with the periphery of the workpiece to be processed placed in the wafer groove and can fix the workpiece to be processed, so that the function of preventing the workpiece to be processed from sliding is achieved, the stability in the rotary motion of the workpiece to be processed is improved, and the epitaxial wafer with higher back quality is obtained.
Description
Technical Field
The invention relates to the field of semiconductor equipment, in particular to a bearing device and a process chamber.
Background
The multi-piece silicon epitaxial equipment utilizes an electromagnetic induction heating graphite thermal field to carry out Chemical Vapor Deposition (CVD), and monocrystalline silicon with a certain thickness and the same lattice arrangement as an original substrate grows on a monocrystalline silicon substrate. The silicon chip is placed in a chip groove (pocket) of the graphite base, the graphite base is jacked up by the quartz shaft, and the graphite base is connected with the quartz shaft by the rotating motor to drive the quartz shaft to rotate at a certain rotating speed, so that the uniformity of a temperature field and an air flow field is ensured.
Referring to fig. 1, the back surface area of a silicon wafer, which is commonly used for epitaxial growth, is divided into a chamfering area 12, an oxide film removing area 11, and a back sealing area 10. The chamfering area 12 is usually R-shaped, is ground by adopting a grinding wheel for multiple times, is polished smoothly and has small roughness, the chamfering angle of a 6-inch silicon wafer epitaxially grown by multiple pieces of silicon is 11 degrees, the roughness Ra is less than or equal to 0.04um, and the width of the chamfering area 12 is 0.3-0.5 um; the distance between the oxide film removing area 11 and the edge is 1.5-2.5 mm, the roughness is higher than that of the chamfer area 12, SiO2 at the edge of the back surface is prevented from becoming a nucleation center for epitaxial growth, and polycrystal and amorphous (amorphous silicon) are formed at the edge to influence the epitaxial quality; the back sealing region 10 is typically sealed with Polysilicon (POLY), silicon dioxide (LTO), silicon nitride (sin) to prevent diffusion of heavily doped substrate dopant atoms; the heat conduction capability is low, and the whole area contacted with the silicon wafer is easy to be heated unevenly.
The silicon chip is placed in a graphite base plate groove for heating, and the base rotates at high temperature. The silicon wafer contact is a circle of the edge of the chamfer area and is a line contact; because the friction coefficient of the edge of the silicon wafer contacting the base is small, the contact surface is small or the rotation fit movement is unstable, the silicon wafer is caused to generate lateral displacement in the process of depositing and growing a silicon layer on the silicon wafer, and gas can enter the back of the silicon wafer through the part which is not attached, so that silicon slag grows on the back of the silicon wafer. The silicon slag growing on the edge of the back surface can cause that the silicon chip can not be focused in the subsequent procedures such as photoetching and the like, and the device fails.
Therefore, a new carrier apparatus is desired, which can solve the problem of the wafer slipping in the wafer slot.
Disclosure of Invention
The invention aims to provide a bearing device and a process chamber, which can solve the problem that a workpiece to be processed generates sideslip in a sheet groove.
In order to solve the above problem, the present invention provides a carrying device for a semiconductor processing chamber to carry a workpiece to be processed, the carrying device comprising:
the upper surface of the bearing main body is provided with at least one sheet groove for placing the workpiece to be processed, the longitudinal section of the bottom wall of the sheet groove is arc-shaped, and the diameter of the sheet groove is larger than that of the workpiece to be processed;
the stop blocks are arranged at the edge of the sheet groove, are in contact with the periphery of the workpiece to be machined placed in the sheet groove and are used for limiting the workpiece to be machined to move in the sheet groove along the radial direction.
In an alternative, the stopper is provided with a vent structure extending in the axial direction of the sheet groove, the vent structure communicating with the sheet groove.
In an alternative, the ventilating structure is a flow guide groove, the cross section of the flow guide groove is in a fan shape, and the opening of the flow guide groove faces to the center of the sheet groove.
In the alternative, be equipped with coarse line way district on the diapire, coarse line way district is located the bearing area that at least three dog was enclosed to establish is intra-area, coarse line way district is used for wait to process the work piece and be heated and produce the warpage after, wait to process the oxide film removal district at the work piece back with coarse line way district contacts.
In an alternative scheme, an included angle between the rough road area and the upper surface of the bearing body is smaller than or equal to 30 degrees.
In an alternative scheme, the rough texture area is annular, and the axis of the rough texture area is coincident with the axis of the sheet groove.
In an alternative, the width of the coarse texture zone is 2mm to 3 mm.
In an alternative, the stop block is provided in plurality, and the adjacent baffle plates are connected with each other.
In an alternative, the stopper is cylindrical, spherical or hemispherical.
The invention also provides a process chamber, which comprises a cavity and the bearing device, wherein the bearing device is arranged in the cavity.
The invention has the beneficial effects that:
the invention sets at least 3 stop blocks at the inner edge of the sheet groove, and the stop blocks are contacted with the periphery of the workpiece to be processed in the sheet groove and are used for fixing the workpiece to be processed. The function of limiting the sliding of the workpiece to be processed in the sheet groove is achieved. The ventilation structure is added in the stop block, so that gas in the sheet groove is easy to lead out when a workpiece to be processed is placed, and the phenomenon that an air cushion is not easy to place sheets is prevented; a rough texture area is added in the edge area of the bottom wall of the sheet groove, when a workpiece to be processed is heated to warp, an oxide film removing area on the back of the workpiece to be processed is contacted with the rough texture area, the roughness of the area is higher than that of the chamfer area, and the roughness between the bearing device and the workpiece to be processed is increased; increasing the line contact to a surface contact; the workpiece to be processed is prevented from sideslipping, the stability of the workpiece to be processed in rotary motion is improved, and the epitaxial wafer with higher back quality is obtained.
The method of the present invention has other features and advantages which will be apparent from or are set forth in detail in the accompanying drawings and the following detailed description, which are incorporated herein, and which together serve to explain certain principles of the invention.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent by describing in more detail exemplary embodiments thereof with reference to the attached drawings.
FIG. 1 shows a schematic view of the silicon wafer backside region partitioning.
FIG. 2 illustrates a cross-sectional view of a carrier in accordance with an embodiment of the present invention.
FIG. 3 illustrates a top view of a carrier according to an embodiment of the present invention.
Fig. 4 is a partially enlarged view of the structure within the dashed box of fig. 3.
Description of the reference symbols
1-a load bearing body; 2-a workpiece to be processed; 3, a stop block; 4-coarse grain area; 5-a diversion trench; 10-a back seal region; 11-an oxide film removal region; 12-chamfered zone.
Detailed Description
The present invention will be described in more detail below. While the present invention provides preferred embodiments, it should be understood that the present invention may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
An embodiment of the present invention provides a carrying device for a semiconductor processing chamber to carry a workpiece to be processed, and fig. 2 to 4 respectively show a cross-sectional view, a top view and a partially enlarged view of the carrying device, and referring to fig. 2 to 4, the carrying device includes:
the workpiece machining device comprises a bearing main body 1, wherein the upper surface of the bearing main body 1 is provided with at least one sheet groove for placing a workpiece 2 to be machined, the longitudinal section of the bottom wall of the sheet groove is arc-shaped, and the diameter of the sheet groove is larger than that of the workpiece 2 to be machined;
and the at least three stop blocks 3 are arranged at the edge of the sheet groove, and the stop blocks 3 are in contact with the periphery of the workpiece 2 to be processed placed in the sheet groove and used for limiting the workpiece 2 to be processed to move in the sheet groove along the radial direction.
Specifically, the sheet groove is a spherical concave pit which is concave inwards relative to the surface of the bearing main body 1, a workpiece 2 to be processed can be accommodated in the sheet groove, the diameter of the sheet groove is slightly larger than that of the workpiece 2 to be processed, and after the workpiece 2 to be processed is placed in the sheet groove, the upper surface of the workpiece 2 to be processed is slightly lower than that of the bearing device 1. At least 3 stoppers 3 are provided in a region where the inner wall surface of the sheet groove faces the outer periphery of the workpiece 2 to be machined. The stoppers 3 are in contact with the outer periphery of the workpiece 2 to be machined placed in the sheet groove, and 3 stoppers (or more stoppers) restrict the workpiece 2 to be machined from different directions from moving in the radial direction in the sheet groove, thereby enabling the workpiece 2 to be machined to be fixed. This embodiment sets up 3 at least dogs through the inside edge at the film trap, and dog 3 is tangent with the periphery of placing the work piece of treating processing in the film trap, and can fix the work piece of treating processing, plays to block the gliding effect of work piece of treating processing, improves the stability in the work piece rotary motion of treating processing, obtains the silicon epitaxial wafer of higher back quality (the work piece of treating processing is silicon wafer in this embodiment).
In one embodiment, the number of the stop blocks is 3, and the 3 stop blocks are evenly distributed on the periphery of the workpiece to be processed. In another scheme, the stop blocks are even and symmetrically distributed. In this embodiment, the number of the stoppers 3 is plural, and the adjacent stoppers 3 are in contact with each other. Of course, a gap may be provided between adjacent blocks 3. The material of the stop block 3 can be the same as that of the bearing main body 1, and in the alternative, the stop block 3 is preferably made of a material with high temperature resistance, small thermal expansion coefficient and small rigidity. When the material of the stopper 3 is the same as that of the main body 1, the stopper 3 and the main body 1 may be an integral structure. In the preferred scheme, the contact surface of the stop block 3 and the workpiece to be processed 2 is arc-shaped, the arc-shaped convex surface is tangent to the side wall of the workpiece to be processed, the arc-shaped surface is in point contact with the periphery of the workpiece to be processed, the wafer can be conveniently put in or taken out, and the stop block 3 can be columnar, spherical or hemispherical.
In one embodiment, the stop 3 is a circle of columnar structures with the number of more than 3 which are processed at the edge of the graphite base at different angles by feeding, wherein the outer surface of each columnar structure is arc-shaped and is arranged at the edge of the groove and is 75mm away from the center of the sheet groove; because the radius of waiting to process the work piece is 75mm, the radius of film trap is 77.5mm, the dog radius is 2.5mm, because the diameter of film trap is greater than the diameter of waiting to process the work piece, nevertheless increase the dog through waiting to process the work piece and reach and block the gliding effect of waiting to process the work piece, the effect that dog 3 set up can let the little work piece of waiting to process of diameter for bearing device groove edge, can have the effect of a fixed position in big groove, can just contact and wait to process work piece 2, the effect of playing is to treat that it has a fixed skid-proof effect to process work piece 2. In one embodiment, the upper surface of the block 3 is 0.5mm to 1mm, for example, 0.75mm, higher than the upper surface of the workpiece 2 to be processed after being placed in the sheet groove, so as to better prevent the workpiece 2 to be processed from sliding.
In an alternative embodiment, the stop is provided with a vent extending in the direction of the axis of the sheet slot, the vent communicating with the sheet slot. Referring to fig. 3 and 4, in a specific embodiment, the venting structure is a guide groove 5, the guide groove 5 is arranged at the edge of the block, the cross section of the guide groove 5 is fan-shaped, and the opening of the guide groove 5 faces to the center of the sheet groove. The guiding gutter 5 makes when putting into the piece groove when waiting to process the work piece, and the gas in the sphere pit is derived easily, prevents to produce the difficult piece of putting of air cushion. Each block can be provided with a guide groove 5, and the gas flow capacity of the guide groove 5 is gradually increased from the edge of the sheet groove to the center of the sheet groove. If the stop blocks 3 are columnar, the cross section of the guide grooves 5 is fan-shaped, wherein the arc-shaped end of the fan-shaped is close to the center of the sheet groove, and the opening shape of the profile is beneficial to discharging gas, in other embodiments, two or more guide grooves 5 can be arranged on each stop block 3, or a part of the stop blocks can be provided with the guide grooves 5, and the other part of the stop blocks 3 are not provided with the guide grooves 5. In another specific embodiment, the air vent structure may also be an air vent hole disposed in the stopper, one end of the air vent hole is communicated with the atmosphere, and the other end of the air vent hole extends to the bottom wall of the sheet groove, and air between the workpiece to be processed and the bottom wall can be guided out of the air vent hole. It will be appreciated that the pattern of the vent structures may be varied so long as it is possible to effect the venting of air from the sheet slots.
With continued reference to fig. 2 and 3, in an embodiment, a rough texture region 4 is disposed on the bottom wall of the sheet groove, the rough texture region 4 is located in a bearing region surrounded by at least three blocks 3, the rough texture region is used for contacting an oxide film removal region on the back of the workpiece 2 to be processed with the rough texture region 4 when the workpiece 2 to be processed is heated to warp, and the distance between the outer boundary of the oxide film removal region on the back of the workpiece 2 to be processed and the boundary of the workpiece 2 to be processed is 1.5-2.5 mm.
Specifically, the back surface region of the workpiece to be processed, which is commonly used for epitaxial growth, is, in order from the outside toward the center, a chamfered region 10, an oxide film removed region 11, and a back seal region 12 (refer to fig. 1). Wherein chamfer district 10 is for being located the round of treating the work piece outermost side, adopt the emery wheel grinding many times, it is smooth to polish, roughness is little, chamfer district 10 width is 0.3 ~ 0.5um, the 6 cun silicon chip chamfer angle of multi-piece silicon epitaxial growth is 11, roughness Ra is less than or equal to 0.04um, back seal district 12 is located the wafer is innermost, in order to prevent heavily doped substrate doping atom diffusion, generally adopt polycrystalline silicon (POLY), silica dioxide (LTO), silicon nitride is sealed, oxide film removes district 11 and is located chamfer district 10 and back seal district 12, be the annular, 1.5 ~ 2.5mm apart from the edge, roughness is higher than chamfer district 10, prevent that the SiO2 at back edge becomes epitaxial growth's nucleation center, form polycrystal, amorphous (amorphous silicon) and influence epitaxial quality at the edge. Treat the processing work piece 2 heating back, the edge produces ascending warpage easily, in this embodiment, when treating that processing work piece 2 is heated the edge and upwards warps, treat that the oxidation film of processing work piece 2 gets rid of district 11 and the regional coarse grain way district 4 contact of slice groove diapire edge, be face contact moreover, because both roughness are higher, frictional force is great, can prevent to treat the lateral displacement of processing work piece 2, prevent that gas from entering into treating the processing work piece 2 back through the part of not laminating, arouse treating the processing work piece 2 back growth silicon sediment. The silicon slag growing on the edge of the back surface can cause that the workpiece 2 to be processed can not be focused in the subsequent procedures such as photoetching and the like, and the device fails. Therefore, in this embodiment, the rough texture region 4 is disposed in the edge region of the bottom wall of the sheet groove, so that the stability of the rotation of the workpiece 2 to be processed can be improved, and the yield of the device can be improved.
In this embodiment, the projection of the rough texture area 4 in the surface direction of the carrying device is annular, and the axis of the rough texture area 4 coincides with the axis of the sheet groove, i.e. the centers of the circles of the two coincide. In this embodiment, the width of the rough road region 4 is 2-3 mm. When the heated edge of the workpiece to be processed is warped upwards, the periphery of the workpiece to be processed can be contacted with the rough texture area 4, and in other embodiments, the rough texture area 4 can also be arranged discontinuously. It can be understood that when the rough texture area 4 is annular, the contact area between the workpiece to be processed and the rough texture area 4 can be enlarged to the greatest extent, and the lateral displacement of the workpiece to be processed is better prevented. The width of the rough texture area 4 can be set according to the warping degree of the workpiece 2 to be processed, and the oxide film removing area 11 of the workpiece 2 to be processed can be in contact with the rough texture area 4 in the edge area of the bottom wall of the wafer groove when the warping degree of the workpiece 2 to be processed is different. The texture of the rough texture region 4 is not limited, and may be wave-shaped or cross-shaped, as long as the surface roughness can be increased. In this embodiment, an included angle between the inclined plane where the coarse texture region 4 is located and the plane where the top surface of the sheet groove is located is less than or equal to 30 degrees, such as 10 degrees or 20 degrees. The inclined plane of the rough road area 4 can be a plane or a certain radian. In the preferred embodiment, the included angles between the inclined plane of the rough texture region 4 and the plane of the top surface of the sheet groove are equal at different positions.
An embodiment of the present invention provides a process chamber, which includes a chamber and the above-mentioned carrying device, and the carrying device is disposed in the chamber. The process chamber is used to perform a semiconductor process, such as a deposition process.
According to the invention, at least 3 stop blocks are arranged at the inner edge of the sheet groove, and the stop blocks are in contact with the periphery of the workpiece to be processed placed in the sheet groove and can fix the workpiece to be processed. The function of blocking the workpiece to be processed from sliding in the sheet groove is achieved. The ventilation structure is added in the stop block, so that gas in the sheet groove is easily led out when a workpiece to be processed is placed in the sheet placing process, and the phenomenon that an air cushion is not easy to place the sheet is prevented; a rough texture area is added in the edge area of the bottom wall of the sheet groove, when a workpiece to be processed is heated to warp, an oxide film removing area on the back of the workpiece to be processed is contacted with the rough texture area, the roughness of the area is higher than that of the chamfer area, and the roughness of the base and the workpiece to be processed is increased; increasing the line contact to a surface contact; the workpiece to be processed is prevented from sideslipping, the stability of the workpiece to be processed in rotary motion is improved, and the epitaxial wafer with higher back quality is obtained.
Having described embodiments of the present invention, the foregoing description is intended to be exemplary, not exhaustive, and not limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments.
Claims (10)
1. A bearing device for a semiconductor process chamber to bear a workpiece to be processed, comprising:
the upper surface of the bearing main body is provided with at least one sheet groove for placing the workpiece to be processed, the longitudinal section of the bottom wall of the sheet groove is arc-shaped, and the diameter of the sheet groove is larger than that of the workpiece to be processed;
the stop blocks are arranged at the edge of the sheet groove, are in contact with the periphery of the workpiece to be machined placed in the sheet groove and are used for limiting the workpiece to be machined to move in the sheet groove along the radial direction.
2. The carrier in accordance with claim 1 wherein the stop is provided with a vent extending in the direction of the sheet slot axis, the vent communicating with the sheet slot.
3. The carrier according to claim 2 wherein the venting structure is a channel having a sector-shaped cross-section with an opening towards the center of the sheet trough.
4. The carrying device as claimed in claim 1, wherein a rough texture area is provided on the bottom wall, the rough texture area is located in a carrying area surrounded by the at least three stoppers, and the rough texture area is used for contacting an oxide film removing area on the back of the workpiece to be processed with the rough texture area after the workpiece to be processed is heated and warped.
5. The carrying device as claimed in claim 4, wherein the angle between the rough road region and the upper surface of the carrying body is less than or equal to 30 degrees.
6. The carrier as claimed in claim 4 wherein the rough texture zone is annular and the axis of the rough texture zone and the axis of the sheet slot coincide.
7. The carrier as claimed in claim 6 wherein the rough road section has a width of 2mm to 3 mm.
8. The carrier as claimed in claim 1, wherein the stop is plural and adjacent flaps are connected to each other.
9. The carrier in accordance with claim 1 wherein the stops are cylindrical, spherical or hemispherical.
10. A process chamber, comprising: a chamber and a carrier as claimed in any one of claims 1 to 9, the carrier being disposed within the chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011510772.1A CN112736013B (en) | 2020-12-18 | 2020-12-18 | Bearing device and process chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011510772.1A CN112736013B (en) | 2020-12-18 | 2020-12-18 | Bearing device and process chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112736013A true CN112736013A (en) | 2021-04-30 |
| CN112736013B CN112736013B (en) | 2024-02-27 |
Family
ID=75603397
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011510772.1A Active CN112736013B (en) | 2020-12-18 | 2020-12-18 | Bearing device and process chamber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112736013B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11145065A (en) * | 1997-11-10 | 1999-05-28 | Toshiba Ceramics Co Ltd | Vapor phase thin film forming device and vapor phase thin film forming method using the same |
| US20070012561A1 (en) * | 2005-07-12 | 2007-01-18 | Texas Instruments Deutschland, Gmbh | Wafer clamp assembly for holding a wafer during a deposition process |
| JP2011144091A (en) * | 2010-01-18 | 2011-07-28 | Shin Etsu Handotai Co Ltd | Susceptor and method for vapor phase growth |
| KR20160015554A (en) * | 2014-07-31 | 2016-02-15 | 서울바이오시스 주식회사 | Susceptor for epitaxial growth |
| KR20180034052A (en) * | 2016-09-27 | 2018-04-04 | 엘지이노텍 주식회사 | Apparatus and method for manufacturing epitaxial wafer |
| CN110273143A (en) * | 2018-03-16 | 2019-09-24 | 北京北方华创微电子装备有限公司 | Processing chamber and semiconductor processing equipment |
| CN211320079U (en) * | 2020-01-06 | 2020-08-21 | 北京北方华创微电子装备有限公司 | Base and semiconductor processing equipment |
-
2020
- 2020-12-18 CN CN202011510772.1A patent/CN112736013B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11145065A (en) * | 1997-11-10 | 1999-05-28 | Toshiba Ceramics Co Ltd | Vapor phase thin film forming device and vapor phase thin film forming method using the same |
| US20070012561A1 (en) * | 2005-07-12 | 2007-01-18 | Texas Instruments Deutschland, Gmbh | Wafer clamp assembly for holding a wafer during a deposition process |
| JP2011144091A (en) * | 2010-01-18 | 2011-07-28 | Shin Etsu Handotai Co Ltd | Susceptor and method for vapor phase growth |
| KR20160015554A (en) * | 2014-07-31 | 2016-02-15 | 서울바이오시스 주식회사 | Susceptor for epitaxial growth |
| KR20180034052A (en) * | 2016-09-27 | 2018-04-04 | 엘지이노텍 주식회사 | Apparatus and method for manufacturing epitaxial wafer |
| CN110273143A (en) * | 2018-03-16 | 2019-09-24 | 北京北方华创微电子装备有限公司 | Processing chamber and semiconductor processing equipment |
| CN211320079U (en) * | 2020-01-06 | 2020-08-21 | 北京北方华创微电子装备有限公司 | Base and semiconductor processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112736013B (en) | 2024-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100419958C (en) | Susceptor for epitaxial growth and epitaxial growth method | |
| JP5926730B2 (en) | Improved wafer carrier | |
| KR100893909B1 (en) | A method of manufacturing a substrate holder | |
| US8007588B2 (en) | Vapor-phase epitaxial growth method and vapor-phase epitaxy apparatus | |
| US7601224B2 (en) | Method of supporting a substrate in a gas cushion susceptor system | |
| US8852349B2 (en) | Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defects | |
| US20080066684A1 (en) | Wafer processing hardware for epitaxial deposition with reduced backside deposition and defects | |
| US20080041798A1 (en) | Wafer Platform | |
| WO2005043613A1 (en) | Substrate holder | |
| KR20130037688A (en) | Wafer carrier with thermal features | |
| JP2016526303A (en) | Improved wafer carrier with features that increase thermal uniformity | |
| CN1714169A (en) | Support system for a treatment apparatus | |
| US7033445B2 (en) | Gridded susceptor | |
| CN100529198C (en) | Support system for treating device | |
| CN112736013A (en) | Bearing device and process chamber | |
| JP2006049503A (en) | Epitaxially growing apparatus | |
| EP3078762B1 (en) | Susceptor, vapor deposition apparatus and vapor deposition method | |
| US20080220585A1 (en) | Method of manufacturing a semiconductor device | |
| CN104835720B (en) | A kind of semiconductor structure and forming method thereof | |
| CN106057724B (en) | Pedestal, epitaxially growing equipment, method of vapor-phase growing and epitaxial silicon wafer | |
| KR20190001370U (en) | Wafer carrier with a 33-pocket configuration | |
| TW201907050A (en) | Carrier disk, method for manufacturing epitaxial substrate, and epitaxial substrate | |
| CN102569161B (en) | Semiconductor device manufacturing method | |
| CN114918824A (en) | Polishing pad with radial micro-grooves | |
| CN117926406A (en) | Graphite carrying disc and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |