KR20190001370U - Wafer carrier with a 33-pocket configuration - Google Patents

Wafer carrier with a 33-pocket configuration Download PDF

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Publication number
KR20190001370U
KR20190001370U KR2020170006850U KR20170006850U KR20190001370U KR 20190001370 U KR20190001370 U KR 20190001370U KR 2020170006850 U KR2020170006850 U KR 2020170006850U KR 20170006850 U KR20170006850 U KR 20170006850U KR 20190001370 U KR20190001370 U KR 20190001370U
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KR
South Korea
Prior art keywords
wafer carrier
upper surface
wafer
pockets
diameter
Prior art date
Application number
KR2020170006850U
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Korean (ko)
Inventor
라스코브스키 율리
데쉬판드 만다
그레리 알렉산더
크리스낭 산딥
파렉 아니루드
Original Assignee
비코 인스트루먼츠 인코포레이티드
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Priority to US29/627,938 priority Critical
Priority to US201729627938 priority
Application filed by 비코 인스트루먼츠 인코포레이티드 filed Critical 비코 인스트루먼츠 인코포레이티드
Publication of KR20190001370U publication Critical patent/KR20190001370U/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

A wafer carrier is disclosed wherein 33 pockets are arranged on the upper surface.

Description

WAFER CARRIER WITH A 33-POCKET CONFIGURATION < RTI ID = 0.0 >

The present invention relates generally to semiconductor fabrication techniques and, more particularly, to a related apparatus capable of holding a semiconductor wafer during a chemical vapor deposition (CVD) process and process.

In the fabrication of high performance devices such as light emitting diodes (LEDs) and laser diodes, optical detectors and field effect transistors, a chemical vapor deposition (CVD) process may be used to deposit thin film laminates Lt; / RTI > CVD equipment includes process chambers that provide a sealed environment for the supplied gas to react on a substrate (generally in the form of a wafer) to form a thin film. In the present production line, the manufacturing equipment is a TurboDisc ?? system of a metal organic chemical vapor deposition (MOCVD) system manufactured by Veeco Instruments Inc. located in Plainview, New York . And EPIK ?? Series.

Several process parameters such as temperature, pressure, and gas flow rate are adjusted to ensure desired crystal growth. Different layers can be grown by modifying material and process parameters. For example, devices formed from compound semiconductors such as III-V semiconductors can be fabricated by growing successive layers of compound semiconductors using MOCVD. In such a process, the wafers are exposed to a combination of gases comprising a source of a metal organic compound and a Group V metal as a Group III metal source flowing over the surface of the wafer while the wafer is held at an elevated temperature. Typically, the metal organic compound and the Group V source are mixed with a carrier gas that does not participate in the reaction, such as nitrogen. For example, a Group III-V semiconductor may be gallium nitride, which may be formed by reaction between organo-gallium compound and ammonia on a substrate having a suitable crystal lattice constant, such as a sapphire wafer. The wafer is often kept at a temperature in the range of 1,000-1,100 [deg.] C during deposition of gallium nitride and related compounds.

In the MOCVD process, crystal growth occurs by a chemical reaction on the surface of the substrate, and process parameters can be specifically controlled, thereby ensuring that the chemical reaction is required. Small changes in the process conditions can adversely affect device characteristics and production rate. For example, when gallium and indium nitride layers are deposited, changes in the wafer surface temperature can cause changes in composition and bandgap of the deposition layer. Since indium has a relatively high vapor pressure, the deposition layer has a lower proportion of indium and has a larger bandgap in the wafer region where the surface temperature is higher. When the deposition layer is active, the emission wavelength of the light emitting layer of the light emitting diode structure and the light emitting diode formed from the wafer may vary to an unacceptable level.

In an MOCVD process chamber, semiconductor wafers on which thin film layers are to be formed are placed on a rapidly rotating carousel as a wafer carrier so that these surfaces can be exposed to the atmosphere in a reaction chamber for the deposition of semiconductor material. The rotation speed corresponds to a speed of 1,000 rpm. The wafer carriers are processed to be made of a highly thermally conductive material such as graphite and are often coated with a protective layer such as silicon carbide. Each wafer carrier has a circular recess or pocket in its upper surface, so that individual wafers can be seated therein. Generally, the wafers are conventionally supported spaced within the bottom surface of each pocket, so that the gas can flow to surround the edge of the wafer. With respect to the related art, U.S. Patent Application Publication No. 2012/0040097, U.S. Patent No. 8,092,599, U.S. Patent No. 8,021,487, U.S. Patent Application Publication No. 2007/0186853, U.S. Patent No. 6,902,623, U.S. Patent No. 6,506,252, U.S. Patent No. 6,492,625, the disclosure of which is incorporated herein by reference.

The wafer carrier is supported on the spindle within the reaction chamber such that the upper surface of the wafer carrier having the exposed surface of the wafer faces the gas distribution device. During rotation of the spindle, gas is directed downwardly to the upper surface of the wafer carrier. The gas used is evacuated from the reaction chamber through a port disposed below the wafer carrier. The wafer carrier is maintained at a predetermined elevated temperature by a heating element, for example an electrically resistive heating element, disposed below the bottom surface of the wafer carrier. The heating elements are maintained at a temperature above a predetermined temperature of the wafer surface, while the gas distribution device is maintained at a temperature below the predetermined reaction temperature, thereby suppressing an excessively early reaction of the gas. Thus, heat is transferred from the heating element to the bottom surface of the wafer carrier and flows upwardly toward the individual wafer through the wafer carrier.

Depending on the radial position of each wafer, the gas flow rate on the wafer is varied such that the wafers in the outermost position are exposed to a greater flow rate by the higher speed of rotation. There may even be temperature uniformity, i.e., cold and hot, on each wafer. One of the parameters affecting the formation of the temperature distribution uniformity may be the shape of the pocket in the wafer carrier. In general, the pocket shape may be circumferential in the surface of the wafer carrier. By rotating the wafer carrier, the wafers can substantially receive centrifugal force at the outermost edge, so that the wafer can be pressed against the inner wall of each pocket in the wafer carrier. In this state, there is an intimate contact between the outermost edge and the pocket edge of the wafers. Increased thermal conduction at the innermost portion of the wafer can cause even greater temperature non-uniformities, thereby exacerbating the problems described above. It has been proposed to design a wafer (i.e., a flat wafer) having flat edges as an attempt to minimize the temperature distribution uniformity by further increasing the gap between the wafer edge and the inner wall of the pocket. The flat portion of the wafer can reduce the temperature nonuniformity by reducing the portion contacting the inner wall of the pocket by forming a gap. Other factors affecting temperature uniformity across the wafer held in the wafer carrier include heat transfer and heat dissipation characteristics of the wafer carrier coupled with the layout of the wafer pocket.

In addition to temperature uniformity, another key characteristic of the wafer carrier is to improve the efficiency of the CVD process. The role of the wafer carrier in improving the process efficiency is to maintain a greater number of individual wafers. Wafer carriers that can hold more wafers can affect the thermal model. For example, portions of the wafer carrier adjacent to the edge may be at a lower temperature than other portions due to heat loss from the edge of the wafer carrier.

Therefore, a wafer carrier having temperature uniformity and mechanical strength in a high-density layout is required as a practical solution.

A wafer carrier configured for use in a chemical vapor deposition apparatus according to an embodiment of the present invention, the wafer carrier comprising: a body having an upper surface and a lower surface opposite to each other; And a plurality of pockets defined in the upper surface of the wafer carrier, wherein the plurality of pockets are generally comprised of 33 pockets, each of the pockets being arranged along one of the three circles, The circles form concentric circles and are also concentric with the circular outline formed by the periphery of the upper surface.

In one embodiment of the present invention, five of the plurality of pockets are arranged along a first one of the three circles, eleven of the plurality of pockets are arranged along a second one of the three circles And 17 of the plurality of pockets may be arranged along a third one of the three circles. Here, the first circle may be surrounded by the second circle, and the second circle may be surrounded by the third circle.

In one embodiment of the present invention, the upper surface may have a diameter of 675 mm.

In one embodiment of the present invention, the top surface may have a diameter of 695 mm.

In one embodiment of the present invention, the upper surface may have a diameter of 705 mm.

In one embodiment of the present invention, the upper surface may have a diameter of 716 mm.

In one embodiment of the present invention, the upper surface may have a diameter of 720 mm.

In one embodiment of the present invention, each of the plurality of pockets may have a pocket diameter of 100 mm.

In one embodiment of the present invention, each of the plurality of pockets may comprise a radial wall having a depth of 760 mm.

The wafer carrier according to one embodiment of the present invention may further comprise a locking structure arranged on the lower surface. Here, the locking structure may be arranged in the geometric center of the lower surface. In addition, the locking structure may be selected from splines, chucks, or keyed fittings.

In one embodiment of the present invention, each of the upper surface and the lower surface has a diameter, and the diameter of the upper surface may be greater than the diameter of the lower surface.

The wafer carrier includes a new array of pockets. The arrangement disclosed herein enables greater packing density and heat transfer of the pockets for growth of the circular wafer.

Various embodiments of the present invention will be described in detail with reference to the drawings.
1 is a schematic block diagram of an MOCVD process chamber according to an embodiment of the present invention.
2 is a perspective view of a wafer carrier having a 33-pocket configuration according to one embodiment of the present invention;
3 is a plan view of a wafer carrier having a 33-pocket configuration according to one embodiment of the present invention;
4 is a side view of a wafer carrier having a 33-pocket configuration according to one embodiment of the present invention;
Figure 5 is a bottom view of a wafer carrier having a 33-pocket configuration according to one embodiment of the present invention;
6 is a detail view showing a portion of a wafer carrier having a 33-pocket configuration to represent one pocket from a perspective view according to one embodiment of the invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the appended claims are not intended to limit the invention to the particular forms disclosed, but to include all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing. In the accompanying drawings, the dimensions of the structures are enlarged from the actual size in order to clarify the present invention.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, the terms "comprises", "having", and the like are used to specify that a feature, a number, a step, an operation, an element, a part or a combination thereof is described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

1 shows a chemical vapor deposition apparatus according to an embodiment of the present invention. The reaction chamber 10 defines a process space. The gas distribution element 12 is arranged at one end of the chamber. One end having the gas distribution element 12 is defined as the upper end of the reaction chamber 10. One end of the chamber is disposed above the chamber in the gravimeter. Thus, the downward direction is defined in a direction away from the gas distribution element 12, whilst those directions are aligned above and below the gravity, while the upward direction is defined in the chamber toward the gas distribution element 12 Direction. Similarly, the top and bottom surfaces of the components are described with reference to their relative positions between the reaction chamber 10 and the gas distribution element 12.

The gas distribution element 12 is connected to sources 14, 16 and 18 for supplying process gases such as reaction gases and carrier gases used in the wafer processing process as sources of metal organic compounds and Group V metals . The gas distribution element 12 is arranged to receive various gases and to direct the flow of the process gas downward. The gas distribution element 12 is also connected to a cooling system 20 arranged to circulate the liquid to flow to the gas distribution element 12 to maintain the temperature of the gas distribution element 12 during operation at a specified temperature do. A similar cooling unit (not shown) may be provided to cool the walls of the reaction chamber 10. The reaction chamber 10 is provided with an exhaust system 22 provided to remove gas after reaction through the interior of the chamber 10 through a port (not shown) at or near the bottom of the chamber, 12). ≪ / RTI >

The spindle 24 is arranged in the chamber 10 so that the central axis 26 of the spindle 24 extends upward and downward. The spindle 24 is mounted to the chamber by a conventional rotary pass-through device using bearings and sealing material (not shown) such that the spindle 24 rotates about the central axis 26, 24 and the walls of the reaction chamber 10 are maintained. The spindle 24 includes a fitting 30 at the end of the spindle adjacent to the tower or gas distribution device 12. As described below, the fitting 30 is an example of a wafer carrier holding structure that is detachably interposed in the wafer carrier. In the particular embodiment described, the fitting 30 corresponds to a truncated conical element tapered toward the top end of the spindle and terminated at a flat top surface. The cut conical element is a conical frustum element. The spindle 24 is coupled to a rotary drive structure 32 such as an electric motor driver to rotate the spindle 24 about the center axis 26.

The fitting 30 can have many other structures. For example, a spindle 24 having a square or round square, a series of columns, an elliptical or other rounded shape with an aspect ratio other than 1: 1, or an end such as a triangle, may be inserted into the matching fitting 30. A variety of other keyed, splined or interlocking devices may be used between the spindle 24 and the fitting 30 to maintain rotational engagement between the components and prevent undesirable slippage do. In an embodiment, a keyed, splined or interlocking device that maintains a desired level of rotational engagement between the fitting 30 and the spindle 24 despite the expected thermal expansion or contraction of any component Can be used.

A heating element 34 is mounted in the chamber and is provided to enclose the spindle 24 below the fitting 30. [ The reaction chamber 10 also includes an entrance 36 leading to the antechamber 38 and a door 40 opening and closing the entrance. The door 40 is shown only schematically in Figure 1 and includes a closed position shown in solid line and a closed position shown in dashed line 40 'to isolate the interior of the reaction chamber 10 from the door side 38 Position. The door 40 is movable between the open position and the closed position by having a suitable control and actuation structure. In practice, the door may include a shutter which is movably provided in an upward and downward direction, which is disclosed, for example, in U.S. Patent No. 7,276,124. The apparatus shown in Figure 1 can move the wafer carrier from the side chamber 38 to the chamber and mount the wafer carrier on the spindle 24 under driving conditions and further move the wafer carrier released from the spindle 24 to the side chamber 38 A loading structure (not shown) that can be moved.

Further, the apparatus may comprise a plurality of wafer carriers. 1, the first wafer carrier 42 is placed inside the reaction chamber 10 in the driving condition, while the second wafer carrier 44 is located in the side chamber 38. [ Each wafer carrier includes a body 46 in the form of a circular disk having a central axis (see FIG. 2). The body 46 is formed symmetrically with respect to the axis. In the drive condition, the axis of the wafer carrier body coincides with the central axis 26 of the spindle 24. The body 46 may be formed as a single piece or a combination of plural pieces. For example, as disclosed in U.S. Patent Publication No. 20090155028, which is hereby incorporated by reference, the wafer carrier body includes a small region of the body surrounding the central axis and a wide region defined by the remainder of the disk- and a large region. The body 46 can be formed of a material that can withstand the temperatures applied in the process without contaminating the process. For example, a large area of the disc may be formed approximately or entirely of a material such as graphite, silicon carbide or other refractory material. The body 46 extends parallel to one another and includes a flat upper surface 48 and a lower surface 52 that are generally perpendicular to the central axis of the disk. The body 46 has a single or a plurality of wafer-holding functions adapted to hold a plurality of wafers.

During operation, a disk-shaped wafer 54 formed from sapphire, silicon carbide, or other crystalline substrate is disposed within each pocket 56 of each wafer carrier. Generally, the wafer 54 has a small thickness compared to the size of the major surfaces. For example, a circular wafer with a diameter of about 2 inches (50 mm) or a circular wafer with a diameter of about 4 inches (100 mm) has a thickness of 770 μm or less. As shown in FIG. 1, the wafer 54 is disposed with an upwardly facing top surface, with the top surface exposed at the top of the wafer carrier.

In a general MOCVD process, the wafer carrier loaded with wafers is loaded into the reaction chamber 10 from the side chambers 38 and placed in the driving position as shown in Fig. In this state, the upper surface of the wafer is directed upwardly to the gas distribution element 12. The heating element 34 is driven and the rotary driver structure 32 is driven to rotate the spindle 24 and the wafer carrier 42 about the axis 26. Generally, the spindle 24 rotates at a rotational speed of 50-1,500 revolutions per minute (rpm). Process gas supply units 14, 16 and 18 are driven to supply gas through gas distribution unit 12. Gas is directed to the wafer carrier 42 and flows down the wafer carrier 42 and the upper surface of the wafer 54 and past the periphery of the wafer carrier to the outlet and exhaust system 22. Thus, the upper surface of the wafer carrier and the upper surface of the wafer 54 are exposed to a process gas comprising a mixture of various gases supplied by a plurality of process gas supply units. In particular, at the top surface, the process gas is mostly carried by the carrier gas supplied by the carrier gas supply unit 16. In a particular chemical vapor deposition process, the carrier gas is comprised of nitrogen, so that the process gas at the upper surface of the wafer carrier is mostly composed of nitrogen with a certain amount of reactant gas component.

The heating element 34 transfers heat to the lower surface 52 of the wafer carrier 42 by radiation heat transfer. The heat applied to the lower surface 52 of the wafer carrier 42 is transmitted through the body 46 of the wafer carrier to the upper surface 48 of the wafer carrier. The heat that is passed upward through the body passes over the lower surface of each wafer 54 past the gap. Heat is also emitted from the top surface 48 of the wafer carrier 42 and from the top surface of the wafer 54 to the cold components of the process chamber, e.g., the walls of the process chamber and the gas distribution device 12. Heat can be transferred to the process gas flowing on the surfaces from the top surface 48 of the wafer carrier 42 and the top surface of the wafer.

In the described embodiment, the system includes various configurations that can determine the heating uniformity of the surface of each wafer 54. In this embodiment, the temperature profiling system 58 collects temperature related information including temperature and temperature monitoring location information from the temperature monitor 60. The temperature profiling system 58 also collects wafer carrier position information from the rotating driver structure 32. The temperature profiling system 58 with this information constitutes the temperature profile of the pocket 56 on the wafer carrier 42. The temperature profile represents the temperature distribution on the surface of the wafer 54 held in each pocket 56 or pocket.

2 is a perspective view of a wafer carrier having a 33-pocket configuration according to one embodiment of the present invention; 3 is a plan view of a wafer carrier having a 33-pocket configuration according to one embodiment of the present invention; The wafer carrier 142 includes a body 146 having an upper surface 148 and 33 pockets 162 therein. In the embodiment shown in FIGS. 2 and 3, the pockets 162 are arranged along three circles, which are concentric with a circle defined by the outer edge of the body 146. In the inner circle in the radial direction, five pockets 162 are uniformly spaced at a radiation angle. Similarly, along the middle circle in the radial direction, eleven pockets 162 are uniformly spaced at a radiation angle. Along the outermost circle in the radial direction, 17 pockets 162 are uniformly spaced at a radiation angle. Each pocket corresponds to an aperture formed in the body 146 such that the upper surface 148 extends substantially perpendicular to the plane in which the upper surface 148 is arranged.

The pockets shown in Figures 2 and 3 have the advantage that the arrangement provides a desired degree of thermal uniformity while maintaining the density of the relatively high pockets 162 on the top surface 148. In an embodiment, the top surface 148 may have a diameter of about 695 mm, as well as about 695 mm, 705 mm, 716 mm and about 720 mm. The pockets 162 are sized to fit this size. For example, the pocket 162 may have a diameter of about 50 mm or a diameter of about 100 mm.

Figure 3 shows representative circles in which the pockets 162 are arranged. In the embodiment shown in FIG. 3, three circles R1, R2, and R3 are shown, which may have different radii to have a circular profile of the upper surface 148 concentrically.

Figure 4 is a side view of the wafer carrier with the 33-pocket configuration of Figures 2 and 3; According to the drawing shown in Fig. 4,

There is a relative size difference between the top surface 148 and the bottom surface 152. In particular, the top surface 148 extends upwardly and downwardly of the page as shown in Fig. 4, or additionally in the radial direction in the views shown in Figs. Each of the pockets 162 previously shown in Figures 2 and 3 extend from the top surface 148 toward the bottom surface 152. The lower surface 152 provides a rigid base for the wafer to grow in the wafer carrier 142.

5 is a bottom view of the wafer carrier 142 described above with reference to Figs. 2-4. As shown in FIG. 5, the wafer carrier 142 includes a locking structure 164 at the center of the bottom surface 152. The locking structure 164 is adapted to engage another configuration, such as the fitting 30 of the spindle 24 described above in FIG. In various embodiments, the locking structure 164 may include, for example, splines, chucks, or keyed fittings. For example, those skilled in the art will appreciate that various structures may add rotational momentum to the wafer carrier 142 from adjacent configurations.

The lower surface 152 may be any material designed to allow heat transfer. (Such as the heating element 34 shown in FIG. 1) to the lower surface 152 in the embodiment as described above. Here, the lower surface 152 may be a material having a relatively low reflectivity and may be coated with such a material.

The wafer carrier 142 may be made of a material suitable for epitaxial growth, such as a graphite or graphite-coating material. In another embodiment, the material forming wafer carrier 142 may be selected to match the desired crystal lattice arrangement or size. Similarly, depending on the wafer to be grown, the pockets 162 may have different sizes.

6 is a detail view showing a portion of a wafer carrier having a 33-pocket configuration to illustrate one pocket 162. FIG. The pocket 162 includes a substantially cylindrical sidewall 166, respectively. The bottom of the cylinder formed by the side wall 166 is the substrate 168. In an embodiment, sidewall 166 may have a depth of about 430 [mu] m.

Although the technical idea of the present invention has been described based on the preferred embodiment of the present invention so far, the technical idea of the present invention is not limited to the above-described embodiments, and the technical idea of the present invention, And can be modified and implemented in various forms without departing from the scope.

Claims (15)

1. A wafer carrier configured for use in a chemical vapor deposition apparatus,
A body having an upper surface and a lower surface facing each other; And
A plurality of pockets defined on the upper surface of the wafer carrier,
The plurality of pockets being comprised of 33 pockets as a whole, each of the pockets being arranged along one of the three circles, the three circles being concentric with each other and having a circular contour formed by the periphery of the upper surface, Wherein the wafer carrier is concentric.
The method according to claim 1,
Five of the plurality of pockets are arranged along a first one of the three circles,
Eleven of the plurality of pockets are arranged along a second one of the three circles,
And 17 of the plurality of pockets are arranged along a third one of the three circles.
3. The wafer carrier of claim 2, wherein the first circle is surrounded by the second circle and the second circle is surrounded by the third circle.
The wafer carrier of claim 1, wherein the upper surface has a diameter of 675 mm.
2. The wafer carrier of claim 1, wherein the upper surface has a diameter of 695 mm.
The wafer carrier of claim 1, wherein the upper surface has a diameter of 705 mm.
2. The wafer carrier of claim 1, wherein the upper surface has a diameter of 716 mm.
The wafer carrier of claim 1, wherein the upper surface has a diameter of 720 mm.
9. The wafer carrier as claimed in any one of claims 1 to 8, wherein each of the plurality of pockets has a pocket diameter of 100 mm.
9. The wafer carrier as claimed in any one of claims 1 to 8, wherein each of the plurality of pockets comprises a radial wall having a depth of 760 mm.
2. The wafer carrier of claim 1, further comprising a locking structure arranged on the lower surface.
12. The wafer carrier of claim 11, wherein the locking structure is arranged in the geometric center of the lower surface.
13. The wafer carrier of claim 12, wherein the locking structure is selected from splines, chucks, or keyed fittings.
2. The wafer carrier of claim 1, wherein each of the upper surface and the lower surface has a diameter and the diameter of the upper surface is greater than the diameter of the lower surface.
The wafer carrier of claim 1, wherein the wafer carrier is adapted to be applied to a metal oxide vapor deposition system.
KR2020170006850U 2017-11-30 2017-12-29 Wafer carrier with a 33-pocket configuration KR20190001370U (en)

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US201729627938 2017-11-30

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US6506252B2 (en) 2001-02-07 2003-01-14 Emcore Corporation Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
US6902623B2 (en) 2001-06-07 2005-06-07 Veeco Instruments Inc. Reactor having a movable shutter
US8092599B2 (en) 2007-07-10 2012-01-10 Veeco Instruments Inc. Movable injectors in rotating disc gas reactors
US8021487B2 (en) 2007-12-12 2011-09-20 Veeco Instruments Inc. Wafer carrier with hub

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TWM567957U (en) 2018-10-01

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