TW202002098A - Processing reaction chamber capable of inhibiting chamber volume from enlarging in vertical direction and occupying space - Google Patents

Abstract

無。

Description

Process reaction chamber

The invention relates to a process reaction chamber.

Regarding semiconductor manufacturing apparatuses, the reaction chamber of a semiconductor substrate, such as a process for forming a film by heat treatment, has been known.

Regarding the reaction chamber of such a process, the following Patent Document 1 discloses a structure having a susceptor that can be raised. [Patent Document 1] Japanese Unexamined Patent Publication No. 2014-222693.

[Technical problem to be solved by the invention] However, in the invention described in Patent Document 1, since the susceptor can be raised, there is a problem that the volume of the entire process reaction chamber increases in the vertical direction and takes up space.

The object of the present invention is to provide a process reaction chamber which can suppress its volume from increasing in the vertical direction and occupy space.

[Technical means] In order to solve the aforementioned technical problems, the process reaction chamber system of the present invention is a process reaction chamber for performing a reaction process on a semiconductor substrate; it has: a pedestal, which is fixedly arranged in an up-down direction position in the process reaction chamber, and carries The semiconductor substrate is placed; the lifting member is arranged under the base and can be raised; the first ejector pin is raised with the lifting member and lifted by the lifting member to face the semiconductor substrate from the top of the base Displaced upwards; a through hole is formed in the base to let the first ejector pin pass, and in the elevating member, a second ejector pin is arranged opposite to the first ejector pin in the up-down direction; the second ejector pin The pin extends in the up-down direction and ascends so that its upper end contacts the lower end of the first ejector pin.

In addition, there is a base support frame that supports the base from below, and the first ejector pin may be arranged outside the outer end of the base support frame when viewed from above.

In addition, it further includes: a base support frame that supports the base from below and extends radially about the center axis, and the lifting member includes a support tube extending in the vertical direction, and a support tube extending from the support tube A plurality of support arms extending perpendicularly to the diameter direction of the central axis; viewed from below, the positions of the plurality of support arms and the base support frame in the circumferential direction around the central axis may be different from each other.

[Effect of the invention] The process reaction chamber of the present invention has a pedestal fixedly arranged in the vertical direction. In addition, without raising the base, the semiconductor substrate can be displaced upward by raising the first ejector pin that passes through the base through-hole. For this reason, compared with a structure in which, for example, the pedestal is raised to displace the semiconductor substrate upward, it is possible to reduce the partial structure displaced in the vertical direction, and to suppress the volume of the process reaction chamber from increasing in the vertical direction and occupying space.

In addition, in the elevating member that raises the first ejector pin, the second ejector pin is disposed at a position opposed to the first ejector pin in the vertical direction, and the upper end portion and the lower end portion of the first ejector pin abut. Therefore, compared with a structure in which the second ejector pin is not provided in the elevating member, for example, the vertical distance between the portion other than the second ejector pin and the base in the elevating member can be ensured. Through this, it is possible to suppress the thermal conduction of the pedestal to the elevating member, and in addition to being able to effectively use the reaction processing heat of the semiconductor substrate, it is also possible to suppress the thermal fatigue of the elevating member.

Next, referring to the drawings, a description will be given of a process reaction chamber 2 according to an embodiment of the present invention. The process reaction chamber 2 according to this embodiment is a chamber in which a semiconductor substrate S is subjected to a reaction process of forming a film on a semiconductor substrate S by heat treatment or the like in the semiconductor manufacturing apparatus 1. First, the structure of the semiconductor manufacturing apparatus 1 will be described.

As shown in FIG. 1, the semiconductor manufacturing apparatus 1 includes a process reaction chamber 2, a transfer chamber 3 that transfers the semiconductor substrate S inside the process reaction chamber 2, and a load-lock chamber 4 connected to the transfer chamber 3. The transfer chamber 3 is disposed between the process reaction chamber 2 and the load-lock chamber 4.

The transport chamber 3 has a transport unit 7. The transport unit 7 has three transport arms 5. The transport arm 5 is arranged around the rotation axis A so as to be free to rotate. The transfer arm 5 can extend and contract in the horizontal direction by turning around the rotation axis A.

In the plural transport arms 5, a blade 5A is provided at the tip of the uppermost portion. In a state where the semiconductor substrate S is carried on the blade 5A, the semiconductor substrate S is transported by extending and contracting in the horizontal direction via the three transport arms 5. A cooling device 6 is arranged in the transport chamber 3. In the transfer chamber 3, an L-shaped gate valve 8 is arranged at a connection point with the process reaction chamber 2. With this structure, the airtight state of the process reaction chamber 2 and the transfer chamber 3 can be ensured.

In the load lock cavity 4, in order to carry the semiconductor substrate S in and out of the transfer cavity 3, an airtight door is arranged in the load lock cavity 4 at the connection to the transfer cavity 3. With this structure, the airtight state of the load lock cavity 4 and the transfer cavity 3 can be ensured.

The process reaction chamber 2 has a pedestal unit 10 carrying a semiconductor substrate S, and a cavity body 20 carrying the pedestal unit 10 inside. In the cavity body 20, a halogen lamp (not shown) for heating the semiconductor substrate S is arranged above and below the cavity body 20.

Next, the structure of the base unit 10 will be described in detail. The base unit 10 includes a base 11 carrying a semiconductor substrate S, a lifting member 12 disposed below the base 11, and a first ejector pin 13 that displaces the semiconductor substrate S upward from the upper surface of the base 11.

As shown in FIGS. 2 and 3, the pedestal 11 is fixedly arranged at the vertical position of the process reaction chamber 2. The semiconductor substrate S is carried on the base 11. The base 11 is supported by the base support frame 15 from below. The base 11 is disc-shaped when viewed from above. In the following description, a straight line perpendicular to the base 11 and passing through the center thereof is referred to as a central axis O1. At the same time, the direction perpendicular to the central axis O1 is called the diameter direction, and the direction around the central axis O1 is called the circumferential direction.

The base 11 and the base support frame 15 can rotate in the circumferential direction. The base 11 is formed with a through-hole 14 penetrating the base 11 in the vertical direction. A plurality of through holes 14 are arranged at intervals in the circumferential direction. In the illustrated example, the three through holes 14 are arranged at equal intervals in the circumferential direction. The inner diameter of the upper end of the through hole 14 gradually increases upward.

The base support frame 15 has a support column 15A extending radially around the center axis O1 and a support shaft 15B that supports the support column 15A. The support shaft 15B is formed integrally with the support column 15A. However, the support shaft 15B and the support column 15A may be formed separately.

The support column 15A extends radially outward from the upper end of the support shaft 15B. As shown in the figure, the support columns 15A extend into three directions at equal intervals of 120°. By connecting the outer end portion of the support column 15A in the diameter direction to the bottom of the base 11, the base 11 is supported by the base support frame 15.

The lifting member 12 can be raised. The lifting member 12 has a support tube 12A extending in the vertical direction, and a plurality of support arms 12B extending in the diameter direction from the upper end of the support tube 12A. The support tube 12A and the support arm 12B are integrally formed. However, the support tube 12A and the support arm 12B may be formed separately.

The support tube 12A is arranged coaxially with the support shaft 15B of the base support frame 15. The support shaft 15B penetrates inside the support tube 12A. The support tube 12A can be displaced in the up-down direction and the circumferential direction with respect to the support shaft 15B. The support arm 12B extends radially outward from the upper end portion of the support tube 12A. As shown in the figure, three support arms 12B are arranged at equal intervals of 120°.

The first ejector pin 13 can be lifted by the lifting member 12 as the lifting member 12 rises. The first ejector pin 13 is inserted into the through hole 14 and moves through the through hole 14 as it rises. The first ejector pins 13 are arranged inside the three through holes 14, respectively. The first ejector pin 13 is arranged at a position that does not interfere with the blade 5A of the transport arm 5.

The outer diameter of the upper end of the first ejector pin 13 gradually increases upward. In addition, the upper end of the first ejector pin 13 and the upper end of the through hole 14 are joined in the vertical direction so that the first ejector pin 13 is held inside the through hole 14. The lower end of the first ejector pin 13 protrudes downward from the base 11. In the first ejector pin 13, the upper end surface facing upward is the same as the upper surface of the base 11.

The first ejector pin 13 is located on the outer periphery of the base 11. Seen from above, the first ejector pin 13 is arranged radially outward of the outer end portion of the support column 15A of the base support frame 15. The diameter of the support arm 12B of the lifting member 12 in the diameter direction is larger than the diameter of the support column 15A of the base support frame 15 in the diameter direction.

In the elevating member 12, a second ejector pin 12C that extends in the vertical direction and rises as the first ejector pin 13 opposes the upper and lower direction is arranged, and its upper end portion abuts on the lower end part of the first ejector pin 13. The second ejector pins 12C are respectively arranged at the outer ends in the diametrical direction of the support arm 12B of the lifting member 12. The lower end edge of the second ejector pin 12C is connected to the upper surface of the support arm 12B. The second ejector pin 12C is formed integrally with the support arm 12B. However, the second ejector pin 12C may be formed separately from the support arm 12B.

The second ejector pin 12C is arranged coaxially with the first ejector pin 13. The outer diameter of the second ejector pin 12C is larger than the first ejector pin 13. The first ejector pin 13 and the second ejector pin 12C each have the same length in the vertical direction. However, the length of the first ejector pin 13 in the vertical direction may be longer or shorter than the length of the second ejector pin 12C in the vertical direction.

Further, as shown in FIG. 3( b ), the plurality of support arms 12B and the base support frame 15 have circumferentially different positions in the circumferential direction around the central axis O1 as viewed from below. As shown in the figure, the three support arms 12B and the three support columns 15A of the base support frame 15 are arranged at equal intervals in the circumferential direction. However, the positions of the three support arms 12B and the three support posts 15A of the base support frame 15 in the circumferential direction may be different from each other at unequal intervals in the circumferential direction.

Next, the processing procedure of the semiconductor substrate S in the process reaction chamber 2 will be described. First, the process of transferring the semiconductor substrate S to the process reaction chamber 2 will be described with reference to FIG. 4. As shown in FIG. 4( a ), the blade 5A of the transport arm 5 is introduced into the process reaction chamber 2 from the transport port. At this time, the semiconductor substrate S to be subjected to the reaction process later is placed on the upper surface of the blade 5A. Then, as shown in FIG. 4( b ), the semiconductor substrate S is positioned above the base 11.

Next, as shown in FIG. 4(c), the lifting member 12 is raised. At this time, the first ejector pin 13 is lifted by bringing the upper end portion of the second ejector pin 12C into contact with the lower end portion of the first ejector pin 13. As a result, the first ejector pin 13 displaces the semiconductor substrate S upward, and a gap is formed between the semiconductor substrate S and the blade 5A of the transport arm 5 in the vertical direction.

Then, as shown in FIG. 4( d ), the blade 5A of the transport arm 5 is moved horizontally toward the transport port so that the semiconductor substrate S is held in the process reaction chamber 2 while being held by the first ejector pin 13. Thereafter, the blade 5A of the transport arm 5 is withdrawn from the process reaction chamber 2.

Next, a process of reacting the semiconductor substrate S with the process reaction chamber 2 will be described using FIG. 5. First, as shown in FIG. 5( a ), the lifting member 12 is lowered to lower the first ejector pin 13. As a result, the semiconductor substrate S held by the first ejector pin 13 is displaced downward, and is placed on the base 11. At this time, the elevating member 12 is lowered to a position where a gap is generated between the second ejector pin 12C and the first ejector pin 13 in the vertical direction. Through this, in the later reaction process, it is possible to suppress the thermal conduction of the susceptor 11 and the semiconductor substrate S to the elevating member 12.

Next, as shown in FIG. 5(b), the semiconductor substrate S is heated to perform a reaction process. At this time, by rotating the base 11 and the base support frame 15 together in the circumferential direction, the heat conduction of the semiconductor substrate S in the circumferential direction is made uniform. As a result, a film is formed on the surface of the semiconductor substrate S.

Finally, the process of taking out the semiconductor substrate S from the process reaction chamber 2 will be described using FIG. 6. First, as shown in FIG. 6( a ), the blade 5A of the transport arm 5 enters the inside of the process reaction chamber 2, and at the same time, by raising the lifting member 12, the semiconductor substrate S after the reaction process is displaced upward as described above. Also, a gap is formed between the semiconductor substrate S and the base 11 in the up-down direction.

Next, as shown in FIG. 6( b ), the blade 5A is moved to the side of the base 11 in the horizontal direction, and is arranged in the gap between the semiconductor substrate S and the base 11. Then, as shown in FIG. 6( c ), the lifting member 12 is lowered to place the semiconductor substrate S on the blade 5A. Finally, by moving the blade 5A to the transfer port in the horizontal direction, the semiconductor substrate S is carried out of the process reaction chamber 2. Thereafter, the semiconductor substrate S is subjected to a subsequent process.

As described above, the process reaction chamber 2 of this embodiment has the pedestal 11 fixedly arranged in the vertical direction. In addition, without raising the susceptor 11, the first ejector pin 13 passing through the through-hole 14 of the susceptor 11 can be raised to displace the semiconductor substrate S upward. Therefore, compared with a structure in which the susceptor 11 is raised to displace the semiconductor substrate S upward, for example, the structure in which the portion displaced in the vertical direction can be reduced, and the increase in the volume of the process reaction chamber 2 in the vertical direction can be suppressed space.

In addition, in the elevating member 12 that raises the first ejector pin 13, the second ejector pin 12C is disposed at a position opposed to the first ejector pin 13 in the vertical direction, and the upper end portion thereof abuts on the lower end portion of the first ejector pin 13. For this reason, compared with a structure in which the second ejector pin 12C is not formed in the elevating member 12, for example, the vertical distance between the portion of the elevating member 12 other than the second ejector pin 12C and the base 11 can be ensured. Through this, the heat conduction from the base 11 to the elevating member 12 can be suppressed, and the heat used for the reaction process of the semiconductor substrate S can be effectively used, and the thermal fatigue of the elevating member 12 can also be suppressed.

In addition, by displacing the semiconductor substrate S upward by using the first ejector pin 13 and the second ejector pin 12C, the first ejector pin 13 can be shortened in the up-down direction as compared with a structure in which only the first ejector pin 13 is used, for example. As a result, the heat capacity of the object to be heated by the halogen lamp becomes small, and the heating time can be shortened.

In addition, the first ejector pin 13 is arranged on the outer side than the radially outer end of the support column 15A of the base support frame 15. For this reason, when the first ejector pin 13 displaces the semiconductor substrate S upward, the outer peripheral portion of the semiconductor substrate S can be raised to stabilize the posture of the semiconductor substrate S when the first ejector pin 13 is displaced upward.

Moreover, since the positions of the support arm 12B and the base support frame 15 in the circumferential direction are different from each other, it is possible to avoid the radiation heat conducted to the base 11 from below at the portion covered by the support arm 12B and the base support frame 15 Overlap in the circumferential direction. Through this, it is possible to suppress the deviation (unevenness) of the radiant heat conducted to the base 11 in the circumferential direction.

In addition, even when the first ejector pin 13 is shorter than the second ejector pin 12C, the heating time of the object to be heated by the halogen lamp becomes smaller, and the heating time can be shortened.

In addition, the foregoing embodiments are only representative embodiments of the present invention. Therefore, various changes can be made to the aforementioned embodiment without departing from the scope of the invention.

For example, in the foregoing embodiment, although the structure in which the first ejector pin 13 is arranged outside the outer end of the base support frame 15 is shown, it is not limited to this form. The first ejector pin 13 may be arranged inside the outer end portion of the base support frame 15.

In addition, in the foregoing embodiment, although the structure in which the plural support arms 12B and the base support frame 15 are different in the circumferential direction from the bottom is shown, it is not limited to this form. The plural support arms 12B and the base support frame 15 may be aligned with each other in the circumferential direction.

In addition, it is not limited to the aforementioned modified examples, and these modified examples may be selected and combined in appropriate combinations, or other modified examples may be implemented.

1‧‧‧Semiconductor manufacturing equipment 2‧‧‧Process reaction chamber 3‧‧‧Transport cavity 4‧‧‧Load lock cavity 5‧‧‧carrying arm 5A‧‧‧Blade 6‧‧‧cooling device 7‧‧‧Transport Department 8‧‧‧L gate valve 10‧‧‧Base unit 11‧‧‧Dock 12‧‧‧Lifting member 12A‧‧‧Support tube 12B‧‧‧support arm 12C‧‧‧2nd pin 13‧‧‧1st pin 14‧‧‧Through hole 15‧‧‧Base support frame 15A‧‧‧support column 15B‧‧‧Support shaft 20‧‧‧Cavity body A‧‧‧Rotating axis O1‧‧‧Central axis S‧‧‧Semiconductor substrate

1 is a longitudinal cross-sectional view of a semiconductor manufacturing apparatus having a process reaction chamber shown in an embodiment of the present invention. 2(a) is a perspective view of the base unit in the process reaction chamber shown in FIG. 1, and FIG. 2(b) is a perspective view of the base of FIG. 2(a); 3(a) is a front view of the base unit shown in FIG. 2(a), and FIG. 3(b) is a top view of the base unit shown in FIG. 2(b); FIG. 4 is a process diagram of transporting a semiconductor substrate in the process reaction chamber shown in FIG. 1; FIG. 5 is a process diagram of a reaction processing semiconductor substrate in the process reaction chamber shown in FIG. 1; FIG. 6 is a process diagram of taking out a semiconductor substrate in the process reaction chamber shown in FIG. 1.

1‧‧‧Semiconductor manufacturing equipment

2‧‧‧Process reaction chamber

3‧‧‧Transport cavity

4‧‧‧Load lock cavity

5‧‧‧carrying arm

5A‧‧‧Blade

6‧‧‧cooling device

7‧‧‧Transport Department

8‧‧‧L gate valve

10‧‧‧Base unit

20‧‧‧Cavity body

A‧‧‧Rotating axis

S‧‧‧Semiconductor substrate

Claims (3)

A process reaction chamber for semiconductor substrate reaction processing, which has: A pedestal, which is fixedly arranged at an up-down position in the process reaction chamber, and mounts the semiconductor substrate; A lifting member arranged below the base and capable of ascending; and, The first ejector pin moves the semiconductor substrate upward from the top of the pedestal as the lifting member lifts and is lifted by the lifting member; A through-hole is formed in the base to let the first ejector pin pass, and in the elevating member, a second ejector pin is arranged at a position opposed to the first ejector pin in the vertical direction; the second ejector pin is attached to It extends in the up-down direction and ascends so that its upper end contacts the lower end of the first ejector pin. The process reaction chamber according to claim 1, which has: a base support frame supporting the base from below; And from the top, the first ejector pin is arranged outside the outer end of the base support frame. The process reaction chamber according to claim 1 or 2, comprising: a pedestal support frame that supports the pedestal from below and extends radially with the central axis as the center; and, The lifting member has: a support tube extending in the up-down direction, and a plurality of support arms extending from the support tube in a diameter direction perpendicular to the central axis; Viewed from below, the plural support arms and the base support frame have circumferentially different positions around the central axis.

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