CN211265505U - Mini LED chip - Google Patents
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- CN211265505U CN211265505U CN201922386858.7U CN201922386858U CN211265505U CN 211265505 U CN211265505 U CN 211265505U CN 201922386858 U CN201922386858 U CN 201922386858U CN 211265505 U CN211265505 U CN 211265505U
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Abstract
The utility model provides a Mini LED chip is located and is connected through corresponding supplementary extension electrode between first type semiconductor layer and the first bonding electrode, does not make supplementary extension electrode on the exposed first type semiconductor layer surface in here promptly at electrode contact fretwork department, and then has avoided because supplementary extension electrode exists the expansion electrode contact fretwork area occupation problem that arouses, has guaranteed that the area of light zone is big, has improved the luminous efficacy of Mini LED chip. Further, because the utility model provides a technical scheme need not the supplementary extension electrode of preparation, and then has avoided because the existence of supplementary extension electrode and the poor problem of insulating isolation reflecting layer coverage effect of the roughness of introducing the first bonding electrode of preparation, and then has improved the reliability of Mini LED chip, and guarantees simultaneously that the luminous angle of Mini LED chip reaches anticipated effect.
Description
Technical Field
The utility model relates to a semiconductor device technical field, more specifically says, relates to a Mini LED (little light Emitting Diode) chip.
Background
A Liquid Crystal Display (LCD) panel has advantages of light weight, thin thickness, easy driving, no harmful rays, and the like, and is widely used in modern information devices such as televisions, notebook computers, mobile phones, and the like. However, since the LCD itself does not emit light, it is necessary to implement display by coupling an external light source, resulting in a thicker LCD corresponding to the display device. In order to adapt to the trend of thinner display panels, an organic light-Emitting Diode (OLED) display panel has appeared after the LCD, which has excellent characteristics of self-luminescence, no need of a backlight, high contrast, thin thickness, fast response speed, applicability to a flexible panel, and the like.
With the update of display panels, a novel display panel, namely a micro light emitting diode (Mini LED) display panel, appears in the market, and also belongs to an active light emitting device, and compared with an OLED display panel, the display panel has the advantages of faster response speed, wider use temperature range, higher light source utilization rate, longer service life and lower cost, so that the micro LED display panel is expected to become the mainstream of the future display panel. Moreover, the RGB Mini LED chip overcomes the defects of welding and reliability of a normally installed chip, and simultaneously combines the advantages of COB (chip on Board) packaging, so that the dot pitch of the display screen is further reduced, the visual effect of a corresponding terminal product is greatly improved, and meanwhile, the visual distance can be greatly reduced, so that the indoor display screen can further replace the original LCD market. On the other hand, the RGB Mini LED chip, when used with a flexible substrate, can also achieve a curved high-quality image display effect, and has a self-luminous characteristic, so that the LED chip has a very wide market in terms of special modeling requirements (such as automobile display).
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model provides a Mini LED chip effectively solves the technical problem that prior art exists, has improved the luminous efficacy and the reliability of Mini LED chip, and guarantees simultaneously that the luminous angle of Mini LED chip reaches anticipated effect.
In order to achieve the above purpose, the utility model provides a technical scheme as follows:
a Mini LED chip, comprising:
the light-emitting epitaxial structure comprises a growth substrate and a light-emitting epitaxial layer which are sequentially superposed, wherein the light-emitting epitaxial layer comprises a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer which are sequentially superposed, and the second type semiconductor layer and the light-emitting layer are provided with electrode contact hollows which expose the first type semiconductor layer;
the transparent conducting layer is positioned on one side, away from the growth substrate, of the second type semiconductor layer, and the part, corresponding to the electrode contact hollow part, of the transparent conducting layer is correspondingly hollow;
the extension electrode is positioned on one side, away from the growth substrate, of the transparent conducting layer;
the insulating isolation reflecting layer covers exposed surfaces of the transparent conducting layer and one side, away from the growth substrate, of the extension electrode and the electrode contact hollow part, wherein the insulating isolation reflecting layer is provided with a first through hole exposing the first type semiconductor layer corresponding to the electrode contact hollow part and a second through hole exposing the extension electrode corresponding to the extension electrode;
and the first bonding electrode and the second bonding electrode are positioned on one side of the insulating isolation reflecting layer, which is far away from the growth substrate, wherein the first bonding electrode is contacted with the first type semiconductor layer through the first through hole, and the second bonding electrode is contacted with the extension electrode through the second through hole.
Optionally, at least one of the first bonding electrode and the second bonding electrode has a plurality of holes.
Optionally, in the bonding electrode with the plurality of holes, the plurality of holes are divided into a first hole group and a second hole group;
the first hole group and the second hole group are symmetrical about a connecting line from the first through hole to the second through hole.
Optionally, the insulating isolation reflection layer further extends to cover the side exposed surface of the light emitting epitaxy.
Optionally, the insulating and isolating reflective layer is a DBR insulating and isolating reflective layer.
Optionally, the DBR insulating isolation reflective layer is SiO2、SiN、TiO2、Ta2O5And MgF, and optionally combined to form a DBR reflective film system layer structure.
Optionally, the electrode contact is hollowed into an electrode contact hole, and the electrode contact hole is located in the coverage area range of the second type semiconductor layer and the light emitting layer.
Compared with the prior art, the utility model provides a technical scheme has following advantage at least:
the utility model provides a Mini LED chip, include: the light-emitting epitaxial structure comprises a growth substrate and a light-emitting epitaxial layer which are sequentially superposed, wherein the light-emitting epitaxial layer comprises a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer which are sequentially superposed, and the second type semiconductor layer and the light-emitting layer are provided with electrode contact hollows which expose the first type semiconductor layer; the transparent conducting layer is positioned on one side, away from the growth substrate, of the second type semiconductor layer, and the part, corresponding to the electrode contact hollow part, of the transparent conducting layer is correspondingly hollow; the extension electrode is positioned on one side, away from the growth substrate, of the transparent conducting layer; the insulating isolation reflecting layer covers exposed surfaces of the transparent conducting layer and one side, away from the growth substrate, of the extension electrode and the electrode contact hollow part, wherein the insulating isolation reflecting layer is provided with a first through hole exposing the first type semiconductor layer corresponding to the electrode contact hollow part and a second through hole exposing the extension electrode corresponding to the extension electrode; and the first bonding electrode and the second bonding electrode are positioned on one side of the insulating isolation reflecting layer, which is far away from the growth substrate, wherein the first bonding electrode is contacted with the first type semiconductor layer through the first through hole, and the second bonding electrode is contacted with the extension electrode through the second through hole.
According to the above, the utility model provides a technical scheme is located and is connected through corresponding supplementary extension electrode between first type semiconductor layer and the first bonding electrode, does not make supplementary extension electrode on the exposed first type semiconductor layer surface in here promptly at electrode contact fretwork department, and then has avoided because supplementary extension electrode exists the expansion electrode contact fretwork area occupation problem that arouses, has guaranteed that the area of light-emitting zone is big, has improved the luminous efficacy of Mini LED chip. Further, because the utility model provides a technical scheme need not the supplementary extension electrode of preparation, and then has avoided because the existence of supplementary extension electrode and the poor problem of insulating isolation reflecting layer coverage effect of the roughness of introducing the first bonding electrode of preparation, and then has improved the reliability of Mini LED chip, and guarantees simultaneously that the luminous angle of Mini LED chip reaches anticipated effect.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a Mini LED chip according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another Mini LED chip according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another Mini LED chip according to an embodiment of the present invention;
fig. 4 is a flowchart of a method for manufacturing a Mini LED chip according to an embodiment of the present invention;
fig. 5 a-5 f are corresponding schematic structural diagrams of the steps in fig. 4.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
As described in the background art, with the update of display panels, a new type of display panel, namely a micro light emitting diode (Mini LED) display panel, appears in the market, which also belongs to an active light emitting device, and compared with an OLED display panel, the micro LED display panel has the advantages of faster response speed, wider temperature range of use, higher light source utilization rate, longer service life and lower cost, and these advantages make the micro LED display panel hopefully become the mainstream of the future display panel. Moreover, the RGB Mini LED chip overcomes the defects of welding and reliability of a normally installed chip, and simultaneously combines the advantages of COB (chip on Board) packaging, so that the dot pitch of the display screen is further reduced, the visual effect of a corresponding terminal product is greatly improved, and meanwhile, the visual distance can be greatly reduced, so that the indoor display screen can further replace the original LCD market. On the other hand, the RGB Mini LED chip, when used with a flexible substrate, can also achieve a curved high-quality image display effect, and has a self-luminous characteristic, so that the LED chip has a very wide market in terms of special modeling requirements (such as automobile display).
The existing Mini LED chip epitaxial structure generally comprises an N-type layer, a light-emitting layer and a P-type layer, wherein a table top exposing the N-type layer is etched in the P-type layer and the light-emitting layer; the conventional Mini LED chip further comprises a P-type extension electrode positioned on the P-type layer, an N-type extension electrode positioned on the N-type layer at the table top, a reflection layer covering the exposed surface of the Mini LED chip at one side of the extension electrode, a P bonding electrode positioned on the reflection layer and communicated with the P-type extension electrode through a through hole, and an N bonding electrode positioned on the reflection layer and communicated with the N-type extension electrode through a through hole. In the existing Mini LED chip, because of the existence of the N-type extension electrode, the mesa areas of the P-type layer and the exposed N-type layer at the light-emitting layer need to be increased, and finally the area of the light-emitting region is reduced, so that the light-emitting efficiency is low; the N-type extended electrode is manufactured and formed in an evaporation mode, so that the side surface of the N-type extended electrode is steep, the covering effect of the reflecting layer is influenced, and the reliability of the Mini LED chip is reduced; meanwhile, due to the existence of the N-type extension electrode, the surface of the finally manufactured N bonding electrode is uneven, the bonding effect is finally influenced, and the reliability and the light-emitting angle of the Mini LED chip are influenced.
Based on this, the utility model provides a Mini LED chip and preparation method thereof effectively solves the technical problem that prior art exists, has improved the luminous efficacy and the reliability of Mini LED chip, and guarantees simultaneously that the luminous angle of Mini LED chip reaches anticipated effect.
In order to achieve the above object, the present invention provides a technical solution as follows, and the technical solution provided by the embodiments of the present invention is described in detail with reference to fig. 1 to 5 f.
Referring to fig. 1, for the embodiment of the present invention provides a structural schematic diagram of a Mini LED chip, wherein the Mini LED chip includes:
the light-emitting epitaxial structure comprises a growth substrate 100 and a light-emitting epitaxy which are sequentially overlapped, wherein the light-emitting epitaxy comprises a first type semiconductor layer 210, a light-emitting layer 220 and a second type semiconductor layer 230 which are sequentially overlapped, and the second type semiconductor layer 230 and the light-emitting layer 220 are provided with electrode contact hollows which expose the first type semiconductor layer 210;
the transparent conducting layer 300 is positioned on the side, away from the growth substrate 100, of the second-type semiconductor layer 230, and the part, corresponding to the electrode contact hollow, of the transparent conducting layer 300 is correspondingly hollow;
an extension electrode 400 located on a side of the transparent conductive layer 300 facing away from the growth substrate 100;
an insulating isolation reflection layer 500 covering exposed surfaces of the transparent conductive layer 300 and the side of the extension electrode 400 away from the growth substrate 100 and the electrode contact hollow, wherein the insulating isolation reflection layer 500 has a first through hole exposing the first type semiconductor layer 210 corresponding to the electrode contact hollow and a second through hole exposing the extension electrode 400 corresponding to the extension electrode 400;
and a first bonding electrode 610 and a second bonding electrode 620 located on a side of the insulating isolation reflective layer 500 facing away from the growth substrate 100, wherein the first bonding electrode 610 is in contact with the first type semiconductor layer 210 through the first via hole, and the second bonding electrode 620 is in contact with the extension electrode 400 through the second via hole.
In an embodiment of the present invention, the first type semiconductor layer can be an N type semiconductor layer, and the second type semiconductor layer is a P type semiconductor layer, which is not limited in the present invention.
It can be understood, the utility model provides a technical scheme is located and is connected through corresponding supplementary extension electrode between first type semiconductor layer and the first bonding electrode, does not make supplementary extension electrode on the exposed first type semiconductor layer surface in here promptly at electrode contact fretwork department, and then has avoided supplementary extension electrode to shelter from the area problem in light zone, has improved the luminous efficacy of Mini LED chip. Further, because the utility model provides a technical scheme need not the supplementary extension electrode of preparation, and then has avoided because the existence of supplementary extension electrode and the poor problem of insulating isolation reflecting layer coverage effect of the roughness of introducing the first bonding electrode of preparation, and then has improved the reliability of Mini LED chip, and guarantees simultaneously that the luminous angle of Mini LED chip reaches anticipated effect.
Because the final solid brilliant to the circuit substrate that needs of Mini LED chip, avoid solid brilliant crooked condition to take place for improving solid brilliant effect, the utility model provides an at least one of first bonding electrode and second bonding electrode sets up a plurality of holes. Referring to fig. 2, a schematic structural diagram of another Mini LED chip according to an embodiment of the present invention is shown, wherein at least one of the first bonding electrode 610 and the second bonding electrode 620 has a plurality of holes 630.
It can be understood that the utility model provides a when the first bonding electrode of preferred preparation and second bonding electrode of technical scheme, all carry out the preparation processing of a plurality of holes. Furthermore, the first bonding electrode and the second bonding electrode are manufactured into a bonding electrode structure with a plurality of holes, so that the contact area between the bonding electrodes and solder (such as tin paste) can be increased, and the phenomenon of die bonding deflection caused by the back suction of the tin paste is avoided.
Further, the embodiment of the utility model provides a can also optimize a plurality of holes on the bonding electrode and handle, further improve solid brilliant effect. Referring to fig. 3, a schematic structural diagram of another Mini LED chip according to an embodiment of the present invention is shown, wherein in the bonding electrode having the plurality of holes 630, the plurality of holes 630 are divided into a first hole group 631 and a second hole group 632;
the first hole group 631 and the second hole group 632 are symmetric about a symmetry axis X about a connection line from the first through hole to the second through hole, and the die bonding effect is further improved by optimizing the hole layout.
In any embodiment of the present invention, the aperture size of the hole provided by the present invention may be 1 μm to 10 μm, inclusive; the pore size can be optimized to be 3-8 μm, inclusive; and the pore size can be further optimized to be 4-5 μm, including the end point value, the utility model is not particularly limited.
Combine fig. 1 to show, the embodiment of the utility model provides an insulating isolation reflection stratum 500 still extends to cover to luminous epitaxial side exposed surface department, insulating isolation reflection stratum 500 still extends to cover to the exposed surface of first type semiconductor layer 210, luminescent layer 220, second type semiconductor layer 230 and transparent conducting layer 300 towards external side promptly, and then guarantees that miniLED chip's side light-emitting efficiency is high, improves Mini LED chip's whole light-emitting efficiency.
It can be understood that the utility model provides a growth substrate divides towards the luminous epitaxial side surface of giving out light to have the device district to encircle the isolation region in device district, and wherein, the device district grows to have luminous epitaxy, and the isolation region then is the extension of insulating isolation reflection stratum by the interface. The embodiment of the utility model provides an isolation region can be located the cutting region of definition single seed chip, perhaps, the isolation region still can be for making alone regionally, and is right here the utility model discloses do not specifically limit.
In an embodiment of the present invention, the insulating isolation reflective layer provided by the present invention is a DBR (distributed Bragg reflector) insulating isolation reflective layer. Optionally, the DBR insulation isolation reflection layer is SiO2、SiN、TiO2、Ta2O5And MgF, and optionally combined to form a DBR reflective film system layer structure.
Referring to fig. 1, the electrode contact hollow-out provided by the embodiment of the present invention is an electrode contact hole, and the electrode contact hole is located in the coverage area of the second type semiconductor layer 230 and the light emitting layer 220.
It can be understood that the utility model provides an electrode contact fretwork is the electrode contact hole of the hole structure of department's sculpture at second type semiconductor layer and luminescent layer, and then makes it combine inseparabler with electrode contact hole inner wall when the insulating reflection stratum of keeping apart of preparation, improves insulating reflection stratum of keeping apart and luminous epitaxial bonding strength.
Correspondingly, the utility model also provides a method for making Mini LED chip, as shown in FIG. 4, for the embodiment of the utility model provides a method for making Mini LED chip's flow chart, wherein, the method for making Mini LED chip includes:
s1, providing a growth substrate;
s2, growing a luminous epitaxy on the growth substrate, wherein the luminous epitaxy comprises a first type semiconductor layer, a luminous layer and a second type semiconductor layer which are sequentially overlapped, and the second type semiconductor layer and the luminous layer are provided with electrode contact hollows which expose the first type semiconductor layer;
s3, forming a transparent conducting layer on one side, away from the growth substrate, of the second type semiconductor layer, wherein the part, corresponding to the electrode contact hollow part, of the transparent conducting layer is correspondingly hollow;
s4, forming an extension electrode on the side, away from the growth substrate, of the transparent conductive layer;
s5, forming an insulating isolation reflecting layer covering exposed surfaces of the transparent conducting layer and the side, away from the growth substrate, of the extension electrode and the electrode contact hollow part, wherein the insulating isolation reflecting layer is provided with a first through hole exposing the first type semiconductor layer corresponding to the electrode contact hollow part and a second through hole exposing the extension electrode corresponding to the extension electrode;
and S6, forming a first bonding electrode and a second bonding electrode on the side, away from the growth substrate, of the insulation isolation reflection layer, wherein the first bonding electrode is in contact with the first type semiconductor layer through the first through hole, and the second bonding electrode is in contact with the extension electrode through the second through hole.
The following describes in detail the manufacturing method provided by the embodiment of the present invention with reference to the corresponding structures of the steps, specifically with reference to fig. 5a to 5f, which are respectively schematic structural diagrams corresponding to the steps in fig. 4.
As shown in fig. 5a, corresponding to step S1, a growth substrate 100 is provided.
In an embodiment of the present invention, the growth substrate provided by the present invention can be made of Al2O3SiC, Si, GaN, GaAs, GaP, etc., to which the present invention is not particularly limited.
As shown in fig. 5b, corresponding to step S2, a light emitting epitaxy is grown on the growth substrate 100, and the light emitting epitaxy includes a first type semiconductor layer 210, a light emitting layer 220, and a second type semiconductor layer 230 stacked in sequence, wherein the second type semiconductor layer 230 and the light emitting layer 220 have electrode contact openings exposing the first type semiconductor layer.
In an embodiment of the present invention, the electrode contact hollows provided by the present invention can be formed by a photolithography process; the method comprises the steps of forming patterned photoresist on the surface of one side, away from a growth substrate, of a second type semiconductor layer, etching the exposed part of the photoresist until the first type semiconductor layer is exposed, and finally removing the photoresist.
Further, after the electrode contact hollowing is formed and before the transparent conductive layer is formed, a single chip can be defined by etching from the second type semiconductor layer along the cutting line, wherein the etching from the second type semiconductor layer to the exposed growth substrate is completed by etching the cutting region (as shown in fig. 5 b), and the single chip can be formed by etching by adopting a photoetching process.
As shown in fig. 5c, corresponding to step S3, a transparent conductive layer 300 is formed on a side of the second type semiconductor layer 230 away from the growth substrate 100, and the transparent conductive layer 300 is correspondingly hollowed out corresponding to the electrode contact hollow.
In an embodiment of the present invention, the transparent conductive layer provided by the present invention may be made of transparent conductive materials such as ITO, ZnO, GaO, etc., and the thickness range thereof may be 200 angstroms to 2000 angstroms, inclusive; and preferably may be from 300 angstroms to 1000 angstroms, inclusive; and further may be 450 angstroms to 700 angstroms, inclusive.
Similarly, the utility model provides a transparent conducting layer corresponds the corresponding fretwork of electrode contact fretwork department and can adopt the photoetching technology sculpture preparation to form.
As shown in fig. 5d, corresponding to step S4, an extension electrode 400 is formed on the transparent conductive layer 300 on the side away from the growth substrate 100.
In an embodiment of the present invention, the extension electrode provided by the present invention is made of metal or alloy material, which has good electrical conductivity; specifically, the material of the extension electrode may be one or a combination of more of Au, Al, Cu, Pt, Ti, and Cr, which is not limited in the present invention.
As shown in fig. 5e, corresponding to step S5, an insulating and isolating reflective layer 500 is formed to cover the exposed surfaces of the transparent conductive layer 300 and the side of the extended electrode 400 away from the growth substrate 100 and the electrode contact hollow portion, wherein the insulating and isolating reflective layer 500 has a first through hole exposing the first type semiconductor layer 210 corresponding to the electrode contact hollow portion and a second through hole exposing the extended electrode 400 corresponding to the extended electrode 400.
The embodiment of the utility model provides an insulating isolation reflection stratum 500 still extends to luminous epitaxial side exposed surface department, insulating isolation reflection stratum 500 still extends to cover to the exposed surface of first type semiconductor layer 210, luminescent layer 220, second type semiconductor layer 230 and transparent conducting layer 300 towards external side promptly, and then guarantees that the side light-emitting efficiency of Mini LED chip is high, improves the whole light-emitting efficiency of Mini LED chip.
It can be understood that the utility model provides a growth substrate divides towards the luminous epitaxial side surface of giving out light to have the device district to encircle the isolation region in device district, and wherein, the device district grows to have luminous epitaxy, and the isolation region then is the extension of insulating isolation reflection stratum by the interface. The embodiment of the utility model provides an isolation region can be located the cutting region of definition single grain chip.
In an embodiment of the present invention, the insulating isolation reflective layer is a DBR insulating isolation reflective layer. Optionally, the DBR insulation isolation reflection layer is SiO2、SiN、TiO2、Ta2O5And MgF, and optionally combined to form a DBR reflective film system layer structure.
Optionally, the embodiment of the utility model provides an when insulating isolation reflector layer is the insulating isolation reflector layer of DBR, can divide two steps to carry out the sculpture to it and form first hole and second hole, and is concrete, the insulating isolation reflector layer of first step sculpture DBR, and the interface layer that forms in the sculpture step obtains first hole and second hole on the sculpture of second step later. Wherein the first step of etching adopts CHF3/Ar/O2Or CF4/Ar/O2The second etching step adopts BCl3/Cl2Mixed gas of/Ar.
As shown in fig. 5e, corresponding to step S6, a first bonding electrode 610 and a second bonding electrode 620 are formed on the side of the insulating and isolating reflective layer 500 away from the growth substrate 100, wherein the first bonding electrode 610 contacts the first type semiconductor layer 210 through the first via hole, and the second bonding electrode 620 contacts the extension electrode 400 through the second via hole.
In an embodiment of the present invention, the material of the at least one of the first bonding electrode and the second bonding electrode provided by the present invention can be metal material, and has good electrical conductivity, and it can be Au, Al, Cu, Pt, Ti, Cr, etc. specifically, this is not limited by the present invention.
Optionally, after the forming of the first bonding electrode and the second bonding electrode, the method further includes:
a plurality of holes are formed on at least one of the first bonding electrode and the second bonding electrode.
Optionally, in the bonding electrode having the plurality of holes, the plurality of holes are divided into a first hole group and a second hole group, and the first hole group and the second hole group are formed to be symmetrical about a connection line from the first through hole to the second through hole.
Compared with the prior art, the utility model provides a technical scheme has following advantage at least:
the utility model provides a Mini LED chip and manufacturing method thereof, include: the light-emitting epitaxial structure comprises a growth substrate and a light-emitting epitaxial layer which are sequentially superposed, wherein the light-emitting epitaxial layer comprises a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer which are sequentially superposed, and the second type semiconductor layer and the light-emitting layer are provided with electrode contact hollows which expose the first type semiconductor layer; the transparent conducting layer is positioned on one side, away from the growth substrate, of the second type semiconductor layer, and the part, corresponding to the electrode contact hollow part, of the transparent conducting layer is correspondingly hollow; the extension electrode is positioned on one side, away from the growth substrate, of the transparent conducting layer; the insulating isolation reflecting layer covers exposed surfaces of the transparent conducting layer and one side, away from the growth substrate, of the extension electrode and the electrode contact hollow part, wherein the insulating isolation reflecting layer is provided with a first through hole exposing the first type semiconductor layer corresponding to the electrode contact hollow part and a second through hole exposing the extension electrode corresponding to the extension electrode; and the first bonding electrode and the second bonding electrode are positioned on one side of the insulating isolation reflecting layer, which is far away from the growth substrate, wherein the first bonding electrode is contacted with the first type semiconductor layer through the first through hole, and the second bonding electrode is contacted with the extension electrode through the second through hole.
According to the above, the utility model provides a technical scheme is located and is connected through corresponding supplementary extension electrode between first type semiconductor layer and the first bonding electrode, does not make supplementary extension electrode on the exposed first type semiconductor layer surface in here promptly at electrode contact fretwork department, and then has avoided supplementary extension electrode to shelter from the area problem in light-emitting area, has improved the luminous efficacy of Mini LED chip. Further, because the utility model provides a technical scheme need not the supplementary extension electrode of preparation, and then has avoided because the existence of supplementary extension electrode and the poor problem of insulating isolation reflecting layer coverage effect of the roughness of introducing the first bonding electrode of preparation, and then has improved the reliability of Mini LED chip, and guarantees simultaneously that the luminous angle of Mini LED chip reaches anticipated effect.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1. A Mini LED chip, comprising:
the light-emitting epitaxial structure comprises a growth substrate and a light-emitting epitaxial layer which are sequentially superposed, wherein the light-emitting epitaxial layer comprises a first type semiconductor layer, a light-emitting layer and a second type semiconductor layer which are sequentially superposed, and the second type semiconductor layer and the light-emitting layer are provided with electrode contact hollows which expose the first type semiconductor layer;
the transparent conducting layer is positioned on one side, away from the growth substrate, of the second type semiconductor layer, and the part, corresponding to the electrode contact hollow part, of the transparent conducting layer is correspondingly hollow;
the extension electrode is positioned on one side, away from the growth substrate, of the transparent conducting layer;
the insulating isolation reflecting layer covers exposed surfaces of the transparent conducting layer and one side, away from the growth substrate, of the extension electrode and the electrode contact hollow part, wherein the insulating isolation reflecting layer is provided with a first through hole exposing the first type semiconductor layer corresponding to the electrode contact hollow part and a second through hole exposing the extension electrode corresponding to the extension electrode;
and the first bonding electrode and the second bonding electrode are positioned on one side of the insulating isolation reflecting layer, which is far away from the growth substrate, wherein the first bonding electrode is contacted with the first type semiconductor layer through the first through hole, and the second bonding electrode is contacted with the extension electrode through the second through hole.
2. The Mini LED chip of claim 1, wherein at least one of the first and second bonding electrodes has a plurality of holes.
3. The Mini LED chip of claim 2, wherein the bonding electrode having the plurality of holes, the plurality of holes are divided into a first group of holes and a second group of holes;
the first hole group and the second hole group are symmetrical about a connecting line from the first through hole to the second through hole.
4. The Mini LED chip of claim 1, wherein the insulating isolating reflective layer further extends over to the side exposed face of the light emitting epitaxy.
5. The Mini LED chip of claim 1, wherein the insulating and isolating reflective layer is a DBR insulating and isolating reflective layer.
6. The Mini LED chip of claim 5, wherein the DBR insulating isolating reflector layer is SiO2、SiN、TiO2、Ta2O5And MgF, and optionally combined to form a DBR reflective film system layer structure.
7. The Mini LED chip of claim 1, wherein the electrode contact openings are electrode contact openings that are located within the coverage area of the second type semiconductor layer and the light emitting layer.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922386858.7U CN211265505U (en) | 2019-12-26 | 2019-12-26 | Mini LED chip |
| PCT/CN2020/138989 WO2021129736A1 (en) | 2019-12-26 | 2020-12-24 | Mini led chip and manufacturing method therefor |
| KR1020227025960A KR20220123045A (en) | 2019-12-26 | 2020-12-24 | Mini light emitting diode chip and manufacturing method thereof |
| US17/832,558 US20220302352A1 (en) | 2019-12-26 | 2022-06-03 | Mini light-emitting diode chip and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922386858.7U CN211265505U (en) | 2019-12-26 | 2019-12-26 | Mini LED chip |
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| CN211265505U true CN211265505U (en) | 2020-08-14 |
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| CN112467007A (en) * | 2019-12-26 | 2021-03-09 | 厦门乾照光电股份有限公司 | Mini LED chip and manufacturing method thereof |
| WO2021129736A1 (en) * | 2019-12-26 | 2021-07-01 | 厦门乾照光电股份有限公司 | Mini led chip and manufacturing method therefor |
| CN113363370A (en) * | 2021-06-02 | 2021-09-07 | 厦门乾照光电股份有限公司 | LED chip with vertical structure and manufacturing method thereof |
| WO2024116553A1 (en) * | 2022-11-29 | 2024-06-06 | 信越半導体株式会社 | Micro-led element |
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| CN112467007A (en) * | 2019-12-26 | 2021-03-09 | 厦门乾照光电股份有限公司 | Mini LED chip and manufacturing method thereof |
| WO2021129736A1 (en) * | 2019-12-26 | 2021-07-01 | 厦门乾照光电股份有限公司 | Mini led chip and manufacturing method therefor |
| CN112309967A (en) * | 2020-10-16 | 2021-02-02 | 深圳市华星光电半导体显示技术有限公司 | Backlight module and manufacturing method thereof |
| CN112309967B (en) * | 2020-10-16 | 2022-03-08 | 深圳市华星光电半导体显示技术有限公司 | Backlight module and manufacturing method thereof |
| CN113363370A (en) * | 2021-06-02 | 2021-09-07 | 厦门乾照光电股份有限公司 | LED chip with vertical structure and manufacturing method thereof |
| WO2024116553A1 (en) * | 2022-11-29 | 2024-06-06 | 信越半導体株式会社 | Micro-led element |
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